TWI534296B - 蝕刻底層凸塊金屬化層及產生的裝置 - Google Patents

蝕刻底層凸塊金屬化層及產生的裝置 Download PDF

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TWI534296B
TWI534296B TW103136586A TW103136586A TWI534296B TW I534296 B TWI534296 B TW I534296B TW 103136586 A TW103136586 A TW 103136586A TW 103136586 A TW103136586 A TW 103136586A TW I534296 B TWI534296 B TW I534296B
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layer
metal
acid solution
wafer
bump
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TW103136586A
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TW201534765A (zh
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坦雅 安德瓦 安塔哪莎瓦
瑞納 威克
安歐克 杜翁
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格羅方德半導體公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23F1/00—Etching metallic material by chemical means
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    • C23F1/18—Acidic compositions for etching copper or alloys thereof
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Description

蝕刻底層凸塊金屬化層及產生的裝置
本發明係關於金屬凸塊的製造，尤其是關於減少由蝕刻凸塊下金屬(UBM)層所導致的金屬凸塊之底切。本發明尤其是可應用到20奈米(nm)及以上的技術節點。
可用乾或濕蝕刻凸塊下金屬層(UBM)層以防止短路。因為不需要額外清理蝕刻殘餘物，所以濕蝕刻可能優於乾蝕刻。濕蝕刻的花費也少於乾蝕刻。然而，蘑菇狀電鍍金屬凸塊下方的濕蝕刻會引起底切(undercut)。
更特定而言，UBM濕蝕刻移除被光阻(例如在焊膏製程中)或金屬凸塊(例如在電鍍焊錫製程中)遮蔽之曝露金屬層。成功的UBM蝕刻涉及到兩個問題，包括完整移除曝露的金屬層，以及控制從金屬凸塊下方不期望地移除UBM層所引起的底切。
現今所使用的濕蝕刻溶液包括硫酸(H2SO4)、過氧化氫(H2O2)及水，並接著稀釋的氫氟酸(HF)，造成2.5至3微米的金屬凸塊之底切。像這樣大數量的底 切減低了金屬凸塊的穩定性。更進一步而言，現今的濕蝕刻溶液也會侵蝕金屬凸塊層，像是鎳或是鋁層。
因此，需要一種濕蝕刻UBM層以產生較小金屬凸塊的底切之方法及產生的裝置。
本發明的一種態樣係濕蝕刻UBM層且產生小於1.5微米的金屬凸塊底切之方法。
本發明的另一種態樣係具有小於1.5微米的金屬凸塊底切之裝置。
本發明的額外態樣及其他特徵將在以下描述所揭示，以及於審閱下文後在某種程度上對於具有本領域技術之人士將是顯而易見的，或可從本發明的實行學習。本發明的優點可在所附申請專利範圍中特別地指出後而明瞭及獲得。
根據本發明，某些技術功效可在某種程度上達成，藉由一種方法，包括：在具有至少兩金屬層的晶圓上圖案化金屬凸塊；曝露該晶圓至第一酸溶液，以移除藉由圖案化該金屬凸塊所曝露出的該兩金屬層中的一部分第一層；以及曝露該晶圓至第二酸溶液，以移除藉由圖案化該金屬凸塊與曝露該晶圓至該第一酸溶液所曝露出的該兩金屬層中的一部分第二層，其中，藉由移除該第一金屬層及該第二金屬層的該部分所形成在該金屬凸塊下面的底切係少於1.5微米。
本發明的一種態樣包括：該第一酸溶液包 括磷酸(H3PO4)、過氧化氫(H2O2)及水。另一種態樣包括：該第一酸溶液包括體積百分比為0.07%至0.36%的H3PO4、體積百分比為0.1%至0.7%的H2O2及剩餘體積的水。進一步的態樣包括在30℃至40℃下曝露該晶圓至該第一酸溶液持續30至60秒。額外的態樣包括：該第二酸溶液包括稀釋的氫氟酸(HF)、在有機溶劑中的HF、或是氨、H2O2、氟及水的混合物(APFM)。還有另一種態樣包括：該第二酸溶液包括體積百分比為0.1%至0.49%的HF及剩餘體積的水。尚有另一種態樣包括在20℃至25℃下曝露該晶圓至該第二酸溶液持續20至40秒。一種額外態樣包括在曝露至該第二酸溶液之後，在20℃至25℃下以去離子水清洗該晶圓持續60至120秒。另一種態樣包括藉由移除在該金屬凸塊下方之該部分的金屬層所形成的底切係為1微米。進一步的態樣包括：該第一金屬層及第二金屬層分別包括具有200至400奈米(nm)厚度的銅(Cu)層及具有100至200nm厚度的鈦(Ti)層，且在曝露至該第一酸溶液及該第二酸溶液後，該部分的銅層和鈦層被完全移除。尚有另一態樣包括該金屬凸塊包括第一銅層，且該金屬層包括第二銅層，並且該第一酸溶液係對該第二銅層的選擇性超過該第一銅層。進一步的態樣包括：藉由銅的電化學沉積(ECD)形成該第一銅層；以及藉由銅的物理氣相沉積(PVD)形成該第二銅層。
本發明的另一態樣係一種裝置，包括：基板；金屬座體(seat)層，在該基板上；以及金屬凸塊，在該 金屬座體層上，其中該金屬座體層係藉由濕蝕刻UBM層所形成，且該金屬凸塊下方的該金屬座體層之底切係小於1.5微米。
態樣包括：該金屬座體層包括在鈦層上之銅層。進一步的態樣包括該銅層具有200到400nm的厚度。另一種態樣包括該鈦層具有100到200nm的厚度。進一步的態樣包括該金屬凸塊下方的該金屬座體層之底切係為1微米。
本發明的另一種態樣包括一種方法，包括：在晶圓上的凸塊下金屬層上圖案化金屬凸塊；以包括體積百分比為0.07%至0.36%的磷酸(H3PO4)、體積百分比為0.1%至0.7%的過氧化氫(H2O2)及剩餘體積之水的溶液在該晶圓上對該凸塊下金屬層執行第一濕蝕刻；在20℃至25℃下以去離子水沖洗該晶圓，並持續60至120秒；以包括體積百分比為0.1%至0.49%的氫氟酸(HF)及剩餘體積之水的溶液對該UBM層執行第二濕蝕刻；以及在20℃至25℃下以去離子水沖洗該晶圓持續60至120秒，其中，藉由移除該金屬凸塊所曝露出的該UBM層所形成的在該金屬凸塊下方之該UBM層之底切係為1微米。
進一步的態樣包括：該UBM層包括具有200至400奈米厚度的銅層以及具有100至200nm厚度的鈦層，且在該第一濕蝕刻及該第二濕蝕刻之後，由該金屬凸塊所曝露處的該銅層與該鈦層係被完全移除。
從而對於本領域之技術人士在閱讀下文的 細節描述之後，本發明的額外態樣及技術功效將變為顯而易知，其中，本發明的實施例將簡單地由所思及的最佳模式之圖示說明的方式來描述，用以實施本發明。將要明白的是，本發明能有其他及不同的實施例，且其數個細節能在各種明顯的方面進行修飾，並皆不悖離本發明。因此，圖式及描述係在本質上係作為例示，且不作為限制。
101‧‧‧晶圓
103、105‧‧‧金屬層
107‧‧‧底部部分
109‧‧‧頂部部分
111‧‧‧金屬凸塊
201‧‧‧酸溶液
301‧‧‧蝕刻金屬層
303‧‧‧去離子水
401‧‧‧酸溶液
501‧‧‧蝕刻金屬層
503‧‧‧去離子水
505‧‧‧圈出部分
601‧‧‧底切
本發明係在隨附圖式的圖中以範例而非限制的方式說明，其中相同的元件符號代表類似的組件，且其中；第1至6圖示意說明一種用於濕蝕刻UBM層以產生小於1.5微米的底切之方法，其中第6圖根據範例實施例說明第5圖的細節部分。
在以下的描述，為了說明的目的，敘述了數個特定細節以提供對範例實施例的徹底理解。然而，顯而易見的是，在不具有這些特定細節或是具有同等配置的情況下可以實行那些範例實施例。在其他的例子中，為了避免不必要地模糊了範例實施例，廣為人知的結構及裝置是以方塊圖的形式顯示。另外，除非另有指出，所有數字表示的數量、比率和數字化之使用在說明書和申請專利範圍中成分的性質和反應條件等等係理解成以術語“大約”而在所有例子中用於修飾。
本發明處理(addresses)以及解決濕蝕刻 UBM層所招致的金屬凸塊底切之當前問題。根據本發明的實施例，使用酸溶液以在該金屬凸塊下方產生小於1.5微米的底切。
根據本發明的實施例之方法，包括在具有至少兩金屬層的晶圓上圖案化金屬凸塊，例如UBM層。隨後該晶圓曝露於第一酸溶液以移除由圖案化該金屬凸塊所曝露出的該兩金屬層中的部分第一層。隨後該晶圓曝露於第二酸溶液，以移除由圖案化金屬凸塊及曝露該晶圓至該第一酸溶液所曝露出的該兩金屬層中的部分第二層。結果，藉由移除部分第一金屬層及第二金屬層所形成之該金屬凸塊下方的底切係小於1.5微米。
請注意到第1圖，根據一範例實施例，一種用於濕蝕刻UBM層的方法係以晶圓101開始。儘管圖示說明為單一層，但該晶圓101可包括其他層(為了方便說明而未顯示)，例如聚醯亞胺(polyimide)層。該晶圓101可更包括金屬層103及金屬層105。該金屬層103可由鈦(Ti)所形成，舉例來說，以90至110nm的厚度，例如是100nm，而該金屬層105可由銅(Cu)所形成，舉例來說，以270至330nm的厚度，例如是300nm。合起來，金屬層103以及金屬層105可構成UBM層。
在金屬層105上方的是金屬凸塊111。金屬凸塊111可以高度63至77微米形成，例如是70微米，並且以寬度50至70微米形成，例如是60微米。該金屬凸塊111包括底部部分107以及頂部部分109。該底部部分107 可由鎳(Ni)以2.7至3.3微米的厚度形成，例如是3微米。該頂部部分109可由錫和銀(SnAg)形成，舉例來說，以98：2之Sn和Ag的比率。或者，金屬凸塊111可由具有在Cu上方(為了說明方便而不顯示)之薄部分的SnAg的Cu所形成。當金屬凸塊111係由Cu形成時，金屬凸塊111的Cu可由電化學沉積(ECD)形成，而金屬層105的Cu可由物理氣相沉積(PVD)形成。金屬凸塊111可進一步為在金屬層105上方被圖案化的複數金屬凸塊中之其中一個。
請注意到第2圖，金屬凸塊111及金屬層105係曝露於酸溶液201。酸溶液201可包括磷酸(H3PO4)、過氧化氫(H2O2)及水。更特定而言，酸溶液201可包括體積百分比為0.07%至0.36%的H3PO4、體積百分比為0.1%至0.7%的H2O2及剩餘體積的水。在酸溶液201內，H2O2作用像是緩衝劑(buffer)以控制在晶圓101上的該層之蝕刻。可使用一批或單一噴出工具在30℃至40℃下將金屬凸塊111以及金屬層105曝露於酸溶液201持續30至60秒。
請注意到第3圖，酸溶液201徹底移除藉由圖案化金屬凸塊111所曝露出的一部分金屬層105，形成蝕刻金屬層301。隨後，蝕刻金屬層301及金屬凸塊111以去離子水303清洗，以停止該蝕刻並洗去剩餘的蝕刻殘餘物。去離子水303的清洗可在20℃至25℃下持續60至120秒。
請注意到第4圖，金屬凸塊111、蝕刻金屬層301及金屬層103中由蝕刻金屬層301所曝露處係曝露 於另一酸溶液401。酸溶液401可包括稀釋的氫氟酸(HF)、在有機溶劑中的HF或是APFM的混合物。具體而言，酸溶液401可包括體積百分比為0.1%至0.4%的HF及剩餘體積的水。或者，酸溶液401可包括在乙二醇(ethyleneglycol)中的HF。金屬凸塊111、蝕刻金屬層301及由蝕刻金屬層301所曝露出的金屬層103，可在30℃至40℃下曝露於酸溶液401持續30到60秒。
如第5圖所圖示說明，酸溶液401徹底移除由蝕刻金屬層301所曝露出的金屬層103之一部分而形成蝕刻金屬層501。隨後，蝕刻金屬層501、蝕刻金屬層301及金屬凸塊111再一次以去離子水503清洗，以停止蝕刻並洗去任何殘留的蝕刻殘餘物。去離子水503的清洗可使用一批或單一噴出工具在20℃至25℃下持續60至120秒。
第5圖所圈出的部分505更加詳細說明於第6圖中，其中圖示說明底切601是由金屬層103所形成，且金屬層105被回蝕(etched back)超過金屬凸塊111的底部部分107之邊緣。基於兩種酸溶液201及酸溶液401的化學反應，該底切係小於1.5微米。該底切601可更特定為1微米，或是甚至更小於1微米。小於1.5微米的底切601，相比於由習知濕蝕刻所形成之2.5至3微米的底切，將產生更穩定的金屬凸塊111。進一步而言，兩種酸溶液201及酸溶液401並不侵蝕金屬凸塊111的底部部分107，該底部部分107由Ni形成，或是，如果出現在金屬凸塊111中或者由Al形成。兩種酸溶液201及酸溶液401，特別是 第一酸溶液201，也展現出對於由PVD(而不是ECD)形成之Cu層的選擇性，使得由PVD沉積的Cu所形成的金屬凸塊係選擇性地比由ECD所沉積的Cu受到更多蝕刻。
本發明的實施例實現數個技術效果，包括金屬凸塊的底切小於1.5微米。本發明享有產業利用性，其關聯於設計以及製造任何各種類型的高度積體半導體元件，使用於特別是用於20nm以上之技術節點的微處理器、智慧手機、行動電話、蜂巢式手機(cellular handsets)、機上盒、DVD錄影機和播放機、汽車導航、影印機和週邊、網路和電信設備、遊戲系統及數位相機(digital cameras)。
在上文的描述中，本發明以參照特定的範例實施例的方式而描述。然而，明顯的，可對其進行各種修飾及改變，且不悖離如闡述在申請範圍中，本發明更廣泛的精神及範圍。因此，本說明書及圖式係認為是用以說明性且並非為限制性。請明瞭本發明能夠使用各種其他的組合與實施例，並且能夠在本文所表示的發明概念之範圍內有任何改變或修飾。
101‧‧‧晶圓
103、105‧‧‧金屬層
107‧‧‧底部部分
109‧‧‧頂部部分
111‧‧‧金屬凸塊

Claims (11)

  1. 一種製造金屬凸塊的方法，包括：在具有至少兩金屬層的晶圓上圖案化金屬凸塊；曝露該晶圓至第一酸溶液，以移除藉由圖案化該金屬凸塊所曝露出的該兩金屬層中的一部分第一層，其中，該第一酸溶液包括體積百分比為0.07%至0.36%的磷酸、體積百分比為0.1%至0.7%的過氧化氫及剩餘體積的水；以及曝露該晶圓至第二酸溶液，以移除藉由圖案化該金屬凸塊與曝露該晶圓至該第一酸溶液所曝露出的該兩金屬層中的一部分第二層，其中，該第二酸溶液包括體積百分比為0.1%至0.49%的氫氟酸及剩餘體積的水、在有機溶劑中的氫氟酸、或是氨、過氧化氫、氟及水的混合物(APFM)，其中，藉由移除該第一金屬層及該第二金屬層的該部分使該第一金屬層及該第二金屬層回蝕超過該金屬凸塊的底部部分之邊緣所形成在該金屬凸塊下方的底切係少於1.5微米。
  2. 如申請專利範圍第1項所述的方法，包括在30℃至40℃下曝露該晶圓至該第一酸溶液30至60秒。
  3. 如申請專利範圍第1項所述的方法，包括在20℃至25℃下曝露該晶圓至該第二酸溶液20至40秒。
  4. 如申請專利範圍第1項所述的方法，更包括在曝露至該第一酸溶液之後，在20℃至25℃下以去離子水清洗 該晶圓60至120秒。
  5. 如申請專利範圍第4項所述的方法，更包括在曝露至該第二酸溶液之後，在20℃至25℃下以去離子水清洗該晶圓60至120秒。
  6. 如申請專利範圍第1項所述的方法，其中，藉由移除在該金屬凸塊下方之該金屬層的該部分所形成的該底切係1微米。
  7. 如申請專利範圍第1項所述的方法，其中，該第一金屬層及該第二金屬層分別包括具有200至400奈米(nm)厚度的銅層及具有100至200nm厚度的鈦層，以及在曝露至該第一酸溶液及該第二酸溶液後，該銅層和該鈦層的該部分被完全地移除。
  8. 如申請專利範圍第1項所述的方法，其中，該金屬凸塊包括第一銅層，以及該金屬層包括第二銅層，以及該第一酸溶液對該第二銅層的選擇性超過該第一銅層。
  9. 如申請專利範圍第8項所述的方法，更包括：由銅的電化學沉積(ECD)形成該第一銅層；以及由銅的物理氣相沉積(PVD)形成該第二銅層。
  10. 一種製造金屬凸塊的方法，包括：在晶圓上的凸塊下金屬化層上圖案化金屬凸塊；以包括體積百分比為0.07%至0.36%的磷酸(H3PO4)、體積百分比為0.1%至0.7%的過氧化氫(H2O2)及剩餘體積之水的溶液在該晶圓上對該凸塊下金屬化 層執行第一濕蝕刻；在20℃至25℃下以去離子水清洗該晶圓60至120秒；以包括體積百分比為0.1%至0.49%的氫氟酸(HF)及剩餘體積之水的溶液對該凸塊下金屬化層執行第二濕蝕刻；以及在20℃至25℃下以去離子水清洗該晶圓60至120秒，其中，藉由移除該金屬凸塊所曝露出的該凸塊下金屬化層所形成在該金屬凸塊下方的該凸塊下金屬化層之底切係1微米。
  11. 如申請專利範圍第10項所述的方法，該凸塊下金屬化層包括具有200至400奈米厚度的銅層及具有100至200nm厚度的鈦層，以及在該第一濕蝕刻及該第二濕蝕刻之後，由該金屬凸塊所曝露處的該銅層與該鈦層係被完全移除。
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