TWI532115B - Substrate processing apparatus and method thereof - Google Patents
Substrate processing apparatus and method thereof Download PDFInfo
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- TWI532115B TWI532115B TW103108667A TW103108667A TWI532115B TW I532115 B TWI532115 B TW I532115B TW 103108667 A TW103108667 A TW 103108667A TW 103108667 A TW103108667 A TW 103108667A TW I532115 B TWI532115 B TW I532115B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
Description
本發明係關於一種基板處理裝置。 The present invention relates to a substrate processing apparatus.
用以製造液晶顯示面板和半導體元件的基板處理裝置一般是採用可以將複數片基板合併處理的群集系統(cluster system)。 A substrate processing apparatus for manufacturing a liquid crystal display panel and a semiconductor element generally employs a cluster system that can process a plurality of substrates in combination.
專利文獻1中有揭示一種群集系統之一例。基板處理裝置係包含裝載站(load station)、轉運機器人(transfer robot)、負載鎖定室(load lock chamber)、搬運機器人(handling robot)及製程室(process chamber)。轉運機器人係將基板轉運至安裝於裝載站的POUP與負載鎖定室之間，而搬運機器人係將基板轉運至負載鎖定室與製程室之間、以及製程室彼此間。負載鎖定室係在二個不同的環境、例如大氣壓環境與真空環境之間完成緩衝空間的任務，且在基板由轉運機器人和搬運機器人所轉運之前先暫時待機。 An example of a cluster system is disclosed in Patent Document 1. The substrate processing apparatus includes a load station, a transfer robot, a load lock chamber, a handling robot, and a process chamber. The transfer robot transports the substrate between the POUP mounted to the loading station and the load lock chamber, and the transfer robot transports the substrate between the load lock chamber and the process chamber, and between the process chambers. The load lock chamber performs the task of buffering space between two different environments, such as an atmospheric pressure environment and a vacuum environment, and temporarily stands by before the substrate is transported by the transfer robot and the transfer robot.
上述的基板處理裝置係依環境條件之差異而必須提供負載鎖定室，且在負載鎖定室之兩側分別提供轉運機器人。因而，會增加裝置整體面積，且會在轉運機器人、負載鎖定室及搬運機器人之間因基板傳遞而發生製程遲滯。製程遲滯將使製程時間增加並減少裝置整體的製程處理效率。 The substrate processing apparatus described above is required to provide a load lock chamber depending on environmental conditions, and a transfer robot is provided on both sides of the load lock chamber. As a result, the overall area of the device is increased, and process lag occurs between the transfer robot, the load lock chamber, and the transfer robot due to substrate transfer. Process hysteresis will increase process time and reduce overall process efficiency of the device.
[先前技術文獻] [Previous Technical Literature]
[專利文獻] [Patent Literature]
專利文獻1：韓國專利公開第1之0-2008-0004118號公報 Patent Document 1: Korean Patent Publication No. 0-2008-0004118
本發明係提供一種可以減少裝置面積的基板處理裝置。 The present invention provides a substrate processing apparatus that can reduce the area of a device.
又，本發明係提供一種可以提高製程處理效率的基板處理裝置。 Further, the present invention provides a substrate processing apparatus which can improve process processing efficiency.
本發明之實施形態的基板處理裝置，係包含：裝載埠(load port)，係可供收納有基板的卡匣(cassette)置放；製程室，係可執行對基板之製程處理；框架(frame)，係提供於前述裝載埠與前述製程室之間，且在內部形成有空間；以及轉運機器人，係位在前述框架之內部，用以將基板轉運至前述卡匣與前述製程室之間。 A substrate processing apparatus according to an embodiment of the present invention includes: a load port for placing a cassette in which a substrate is housed; a process chamber for performing processing on the substrate; and a frame (frame) Provided between the loading magazine and the process chamber, and having a space formed therein; and a transfer robot positioned inside the frame for transporting the substrate between the cassette and the process chamber.
又，可以更包含：校準室(alignment chamber)，係提供於前述框架之內部，且可整齊排列基板之位置；以及冷卻室(cooling chamber)，係提供於前述框架之內部，且可冷卻製程完成後之基板。 Moreover, the method further includes: an alignment chamber provided inside the frame and aligning the positions of the substrate; and a cooling chamber provided inside the frame and capable of cooling the process Subsequent substrate.
又，前述轉運機器人、前述校準室及前述冷卻室係可以位在同一空間。 Further, the transfer robot, the calibration chamber, and the cooling chamber may be located in the same space.
又，前述校準室和前述冷卻室係能積層於上下方向。 Further, the calibration chamber and the cooling chamber can be stacked in the vertical direction.
又，前述校準室和前述冷卻室係能並排地提供於側方向。 Further, the calibration chamber and the cooling chamber described above can be provided side by side in the side direction.
又，前述裝載埠、前述轉運機器人及前述製程室係能依順序地配置成一排，前述校準室和前述冷卻室，係能從前述裝載埠、前述轉運機器人及前述製程室配置成一排的生產線上脫離所配置。 Further, the loading cassette, the transfer robot, and the processing chamber may be arranged in a row in sequence, and the calibration chamber and the cooling chamber may be arranged in a row from the loading cassette, the transfer robot, and the processing chamber. Detached from the configuration.
又，可以更包含：支撐板，係位在前述校準室內；第1及第2襯墊(pad)，係固定位在前述支撐板之上面，且可供基板置放；以及校準推桿(alignment pusher)，係位在前述支撐板之上面，且朝向前述支撐板之中心方向移動以推基板。 Moreover, the method further includes: a support plate positioned in the calibration chamber; the first and second pads are fixed on the support plate and can be placed on the substrate; and the alignment push rod Pusher), which is positioned above the aforementioned support plate and moves toward the center of the support plate to push the substrate.
又，前述第1襯墊具有：第1本體，係可供基板置放；以及第1上端部，係從前述第1本體朝向上部突出，且內側面具有與基板之曲率半徑相應的曲率半徑；前述第2襯墊具有：第2本體，係可供基板置放；以及第2上端部，係從前述第2本體朝向上部突出，且內側面具有比基板之曲率半徑還更大的曲率半徑；前述校準推桿係可以以基板之側部能密接於前述第1上端部之內側面的方式來推基板。 Further, the first spacer has a first body for placing the substrate, and a first upper end portion protruding from the first body toward the upper portion, and the inner side surface has a radius of curvature corresponding to a radius of curvature of the substrate; The second spacer has a second body for placing the substrate, and a second upper end protruding upward from the second body, and the inner side surface has a radius of curvature larger than a radius of curvature of the substrate; The calibration pusher can push the substrate so that the side portion of the substrate can be in close contact with the inner side surface of the first upper end portion.
又，可以更包含：冷卻板，係只要位在前述冷卻室之內側，則於內部形成有冷卻流路；複數支升降銷(lift pin)，係沿著形成於前述冷卻板之銷孔(pin hole)而朝向上下方 向移動；以及校準推桿，係將置放於前述冷卻板的基板之側部推向前述冷卻板之中心方向以整齊排列基板位置。 Moreover, the cooling plate may further include a cooling flow path formed inside the cooling chamber; and a plurality of lift pins are disposed along the pin holes formed in the cooling plate (pin) Hole) The moving and the aligning pusher push the side of the substrate placed on the cooling plate toward the center of the cooling plate to align the substrate positions.
又，前述校準推桿可以包含：第1推桿至第3推桿，係沿著前述冷卻板之周邊而相互地隔離所配置；以及驅動部，係以前述第1推桿和前述第2推桿將基板之一側部第1次推向前述冷卻板之中心方向，且前述第3推桿將基板之另一側部第2次推向前述冷卻板之中心方向的方式，來驅動前述第1推桿至前述第3推桿。 Further, the calibration pusher may include: a first pusher to a third pusher disposed to be spaced apart from each other along a periphery of the cooling plate; and a drive unit that is configured by the first pusher and the second pusher The lever drives the side of one of the substrates to the center direction of the cooling plate for the first time, and the third pusher drives the other side of the substrate to the center of the cooling plate for the second time to drive the first 1 push the rod to the aforementioned third push rod.
本發明之實施形態的基板處理方法，係包含：基板拉出階段，係拉出被收納於卡匣中的基板；製程處理前階段，係將基板提供至製程室之內部；以及基板收納階段，係使製程處理完成後的基板收納於前述卡匣；前述基板拉出階段、前述製程準備階段及前述基板收納階段中的基板，係能藉由同一轉運機器人來轉運。 A substrate processing method according to an embodiment of the present invention includes: a substrate pulling stage for pulling out a substrate stored in a cassette; a pre-process processing stage for supplying a substrate to a process chamber; and a substrate storage stage, The substrate after the completion of the process is stored in the cassette; and the substrate in the substrate drawing stage, the process preparation stage, and the substrate storage stage can be transported by the same transfer robot.
又，更包含：校準階段，係在提供基板於前述製程室之內部之前，先將基板提供至校準室內以整齊排列基板位置；前述校準室與前述製程室之間的基板轉運，係能藉由前述轉運機器人來進行。 Moreover, the method further comprises: providing a substrate to the calibration chamber to arrange the substrate position neatly before providing the substrate to the inside of the processing chamber; and transferring the substrate between the calibration chamber and the processing chamber by using the substrate The aforementioned transfer robot is carried out.
又，前述第1襯墊之上端部的內側面，係可以具有與前述基板之曲率半徑相應的曲率半徑。 Further, the inner side surface of the upper end portion of the first spacer may have a radius of curvature corresponding to the radius of curvature of the substrate.
又，更包含：冷卻階段，係將從前述製程室拉出的基板提供至冷卻室之內部，以冷卻製程處理完成後的基板； 前述製程室與前述冷卻室之間的基板轉運，係可以藉由前述轉運機器人來進行。 Moreover, the method further includes: a cooling stage, wherein the substrate pulled out from the processing chamber is supplied to the inside of the cooling chamber to cool the substrate after the process is completed; The substrate transfer between the process chamber and the aforementioned cooling chamber can be performed by the transfer robot.
又，前述冷卻階段係可以在冷卻板之上面置放有基板，使沿著前述冷卻板之周邊而隔離所配置的第1推桿和第2推桿朝向前述冷卻板之中心方向移動而第1次推基板之一側部，且使第3推桿朝向前述冷卻板之中心方向移動而第2次推基板之另一側部以整齊排列基板之位置。 Further, in the cooling stage, a substrate may be placed on the upper surface of the cooling plate, and the first push rod and the second push rod disposed to be separated from each other along the periphery of the cooling plate may be moved toward the center of the cooling plate to be the first One side of the substrate is pushed back, and the third pusher is moved toward the center of the cooling plate, and the other side of the substrate is pushed for the second time to align the positions of the substrate.
依據本發明，由於裝置可小型化所以能減少裝置面積。 According to the present invention, since the apparatus can be miniaturized, the apparatus area can be reduced.
又，依據本發明，由於減少基板轉運路徑所以能提高裝置整體的製程處理效率。 Further, according to the present invention, since the substrate transfer path is reduced, the process processing efficiency of the entire apparatus can be improved.
10‧‧‧基板處理裝置 10‧‧‧Substrate processing unit
100‧‧‧裝載埠 100‧‧‧Loading
200‧‧‧裝置前方端部模組 200‧‧‧ front end module
210‧‧‧框架 210‧‧‧Frame
211‧‧‧內部空間 211‧‧‧Internal space
220‧‧‧轉運機器人 220‧‧‧Transfer robot
221‧‧‧機械手 221‧‧‧ Robot
230、230a、230b‧‧‧校準室 230, 230a, 230b‧‧‧ calibration room
231‧‧‧支撐板 231‧‧‧Support board
235‧‧‧第1襯墊 235‧‧‧1st pad
236‧‧‧第1本體 236‧‧‧1st ontology
237‧‧‧第1上端部 237‧‧‧1st upper end
238‧‧‧第1上端部之內側面 238‧‧‧ inside side of the first upper end
241‧‧‧第2襯墊 241‧‧‧2nd pad
242‧‧‧第2本體 242‧‧‧2nd ontology
243‧‧‧第2上端部 243‧‧‧2nd upper end
244‧‧‧第2上端部之內側面 244‧‧‧ inside side of the second upper end
245‧‧‧校準推桿 245‧‧‧ Calibration push rod
250、250a、250b‧‧‧冷卻室 250, 250a, 250b‧‧‧ cooling room
251‧‧‧冷卻板 251‧‧‧Cooling plate
252‧‧‧銷孔 252‧‧ ‧ pinhole
253‧‧‧冷卻流體供應管線 253‧‧‧Cooling fluid supply line
255‧‧‧升降銷 255‧‧‧lifting pin
260‧‧‧校準推桿 260‧‧‧ Calibration putter
261、262、263‧‧‧推桿 261, 262, 263 ‧ ‧ putts
300‧‧‧製程室 300‧‧‧Processing Room
圖1係簡略顯示本發明之實施形態的基板處理裝置之俯視圖。 Fig. 1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
圖2係顯示圖1之校準室和冷卻室之配置的圖式。 Figure 2 is a diagram showing the configuration of the calibration chamber and the cooling chamber of Figure 1.
圖3係簡略顯示本發明之另一實施形態的基板處理裝置之俯視圖。 Fig. 3 is a plan view schematically showing a substrate processing apparatus according to another embodiment of the present invention.
圖4係顯示按照本發明之實施形態而被提供於校準室內的構成之俯視圖。 Fig. 4 is a plan view showing a configuration provided in a calibration chamber according to an embodiment of the present invention.
圖5係沿著圖4之A-A’線的剖視圖。 Figure 5 is a cross-sectional view taken along line A-A' of Figure 4 .
圖6係顯示本發明之實施形態的第1襯墊和第2襯墊之立體圖。 Fig. 6 is a perspective view showing a first spacer and a second spacer in the embodiment of the present invention.
圖7係顯示按照本發明之實施形態而被提供於冷卻室內的構成之俯視圖。 Fig. 7 is a plan view showing a configuration provided in a cooling chamber according to an embodiment of the present invention.
圖8係依順序顯示基板在冷卻室內整齊排列之過程的圖式。 Figure 8 is a diagram showing, in order, the process in which the substrates are aligned in the cooling chamber.
圖9係依順序顯示基板在冷卻室內整齊排列之過程的圖式。 Figure 9 is a diagram showing, in order, the process in which the substrates are aligned in the cooling chamber.
圖10係顯示本發明之另一實施形態的基板處理裝置之剖視圖。 Figure 10 is a cross-sectional view showing a substrate processing apparatus according to another embodiment of the present invention.
以下，參照所附圖式更詳細地說明本發明之實施形態。本發明之實施形態係可變化為各種形態，且本發明之範圍不得解釋為被限定於以下之實施形態。本實施形態係為了對該業界中具有平均知識者更完全地說明本發明而提供者。因而，圖式中的要素形狀係為了強調更明確的說明而做了誇大顯示。 Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention can be modified into various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is intended to provide a more complete description of the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings has been exaggerated for the purpose of emphasizing a more explicit description.
圖1係簡略顯示本發明之實施形態的基板處理裝置之俯視圖。 Fig. 1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
若參照圖1，則基板處理裝置10係包含裝載埠100、裝置前方端部模組(equipment front end module：EFEM)200及製程室300。裝載埠100、裝置前方端部模組200及製程室300係配置於單一方向。以下，將裝載埠100、裝置前方端部模組200及製程室300所排列的方向定義為第1方向X，且將從上部來觀看時，與第1方向X為垂直的方向定義為第2方向Y。 Referring to Fig. 1, the substrate processing apparatus 10 includes a loading cassette 100, an apparatus front end module (EFEM) 200, and a processing chamber 300. The loading cassette 100, the device front end module 200, and the processing chamber 300 are arranged in a single direction. Hereinafter, the direction in which the loading cassette 100, the device front end module 200, and the processing chamber 300 are arranged is defined as the first direction X, and when viewed from the upper portion, the direction perpendicular to the first direction X is defined as the second direction. Direction Y.
裝載埠100係位在裝置前方端部模組200之前方。裝載埠100係提供複數個，且沿著第2方向Y配置成一排。 在裝載埠100係置放有卡匣C。在卡匣C係積層收納有複數片基板。在卡匣C係收納有製程中所提供的基板以及製程處理完成後的基板。 The loading cassette 100 is positioned in front of the front end module 200 of the device. The loading cassette 100 is provided in plurality and arranged in a row along the second direction Y. A cassette C is placed in the loading cassette 100. A plurality of substrates are housed in the cassette C-layer. The substrate provided in the process and the substrate after the process is completed are stored in the cassette C system.
裝置前方端部模組200係將基板轉運至卡匣C與製程室300之間。裝置前方端部模組200係包含框架210、轉運機器人220、校準室230及冷卻室250。 The device front end module 200 transports the substrate between the cassette C and the process chamber 300. The device front end module 200 includes a frame 210, a transfer robot 220, a calibration chamber 230, and a cooling chamber 250.
框架210係配置於裝載埠100與製程室300之間。在框架210之內部係形成有空間。框架210之內部空間211係提供有充分的寬度以免妨礙轉運機器人220之移動及轉運機器人220之機械手221移動。 The frame 210 is disposed between the loading cassette 100 and the process chamber 300. A space is formed inside the frame 210. The internal space 211 of the frame 210 is provided with a sufficient width to prevent the movement of the transfer robot 220 and the movement of the robot 221 of the transfer robot 220.
轉運機器人220係提供至框架210內。轉運機器人220係由單一機器人所提供，且具有可供基板裝載的機械手221。轉運機器人220係可以將基板轉運至卡匣C、校準室230、冷卻室250及製程室300之彼此間。 A transfer robot 220 is provided within the frame 210. The transfer robot 220 is provided by a single robot and has a robot 221 for loading the substrate. The transfer robot 220 can transport the substrate to the cassette C, the calibration chamber 230, the cooling chamber 250, and the process chamber 300.
校準室230和冷卻室250係位在框架210之內部。校準室230係在提供基板於製程室300或是卡匣C之前，先提供可整齊排列基板位置的空間。冷卻室250係提供可使製程處理完成後之基板在製程室300冷卻的空間。 The calibration chamber 230 and the cooling chamber 250 are tied inside the frame 210. The calibration chamber 230 provides a space for aligning the position of the substrate before providing the substrate to the process chamber 300 or the cassette C. The cooling chamber 250 is provided with a space in which the substrate after the process is completed is cooled in the process chamber 300.
校準室230和冷卻室250係可以從裝載埠100、轉運機器人220及製程室230配置成一排所形成的生產線上脫離所配置。依據實施形態，則校準室230和冷卻室250係能在第2方向Y與轉運機器人220配置成一排。 The calibration chamber 230 and the cooling chamber 250 can be configured to be disengaged from the production line formed by the loading cassette 100, the transfer robot 220, and the process chamber 230 in a row. According to the embodiment, the calibration chamber 230 and the cooling chamber 250 can be arranged in a row with the transfer robot 220 in the second direction Y.
校準室230和冷卻室250係能如圖2般地積層於上下方向來提供。與此不同，校準室和冷卻室係能如圖3般地 以同一高度並排地配置於側方向。 The calibration chamber 230 and the cooling chamber 250 can be provided by stacking in the up and down direction as shown in FIG. In contrast, the calibration chamber and the cooling chamber can be as shown in FIG. They are arranged side by side at the same height in the side direction.
圖4係顯示按照本發明之實施形態而被提供於校準室內的構成之俯視圖，圖5係沿著圖4之A-A’線的剖視圖。 Fig. 4 is a plan view showing a configuration provided in a calibration chamber according to an embodiment of the present invention, and Fig. 5 is a cross-sectional view taken along line A-A' of Fig. 4.
若參照圖4及圖5，則在校準室230之內部係提供有支撐板231、第1襯墊235、第2襯墊241及校準推桿245。 Referring to FIGS. 4 and 5, a support plate 231, a first spacer 235, a second spacer 241, and a calibration pusher 245 are provided inside the calibration chamber 230.
支撐板231係設為具有預定厚度的板，且具有比基板W還大的面積。在支撐板231之上面係提供有第1襯墊235、第2襯墊241及校準推桿245。 The support plate 231 is set to have a plate having a predetermined thickness and has a larger area than the substrate W. A first spacer 235, a second spacer 241, and a calibration pusher 245 are provided on the upper surface of the support plate 231.
第1襯墊235係固定位在支撐板231之上面，用以支撐基板W之一側部。如圖6(a)所示，第1襯墊235係具有第1本體236和第1上端部237。第1本體236係提供作為具有預定厚度的板。在第1本體236之上面係置放有基板W。第1上端部237係從第1本體236之上面一部分朝向上部突出。第1上端部237之內側面238係具有與基板W之曲率半徑相應的曲率半徑。依據實施形態，則第1襯墊235係提供有一對，且相互隔離地配置。 The first pad 235 is fixed on the support plate 231 to support one side of the substrate W. As shown in FIG. 6(a), the first spacer 235 has a first body 236 and a first upper end portion 237. The first body 236 is provided as a plate having a predetermined thickness. A substrate W is placed on the upper surface of the first body 236. The first upper end portion 237 protrudes from the upper portion of the first body 236 toward the upper portion. The inner side surface 238 of the first upper end portion 237 has a radius of curvature corresponding to the radius of curvature of the substrate W. According to the embodiment, the first spacers 235 are provided in a pair and are disposed apart from each other.
第2襯墊241係固定位在支撐板231之上面，用以支撐基板W之另一側部。第2襯墊241係以基板W之中心為基準而能提供於與第1襯墊235對向的位置。依據實施形態，則第2襯墊241係提供有一對，且以基板W之中心為基準而與第1襯墊235對向地位處。如圖6(b)所示，第2襯墊241係具有第2本體242和第2上端部243。第2本體242係提供作為具有預定厚度的板。在第2本體242之上面係置放有基板W。第2上端部243係從第2本體242 之上面一部分朝向上部突出。第2上端部243之內側面244係具有比基板W之曲率半徑還更大的曲率半徑。然後，第2上端部243之內側面244與第1上端部237之內側面238之間的距離係比基板W之直徑還更大。基板W係偏向於第2襯墊241側而安裝於第1襯墊235和第2襯墊241。第2上端部243之內側面244之較大的曲率半徑係可供基板W安全地置放於第2本體242。 The second spacer 241 is fixed on the support plate 231 to support the other side of the substrate W. The second spacer 241 can be provided at a position facing the first spacer 235 with reference to the center of the substrate W. According to the embodiment, the second spacer 241 is provided in a pair and is opposed to the first spacer 235 with respect to the center of the substrate W. As shown in FIG. 6(b), the second spacer 241 has a second body 242 and a second upper end portion 243. The second body 242 is provided as a plate having a predetermined thickness. A substrate W is placed on the upper surface of the second body 242. The second upper end portion 243 is from the second body 242 The upper portion protrudes toward the upper portion. The inner side surface 244 of the second upper end portion 243 has a radius of curvature larger than the radius of curvature of the substrate W. Then, the distance between the inner side surface 244 of the second upper end portion 243 and the inner side surface 238 of the first upper end portion 237 is larger than the diameter of the substrate W. The substrate W is attached to the first spacer 235 and the second spacer 241 while being biased toward the second spacer 241 side. The larger radius of curvature of the inner side surface 244 of the second upper end portion 243 allows the substrate W to be safely placed on the second body 242.
校準推桿245係位在第2襯墊241之間。校準推桿245係從基板W之外側直線移動以將基板W推向第1襯墊235側。由校準推桿245所推的基板W之側部係密接於第1上端部237之內側部238。第1上端部237之內側面238係提供於用以整齊排列基板W之位置的基準位置。位置經整齊排列後的基板W係藉由轉運機器人220所拾取(pickup)。 The calibration pusher 245 is positioned between the second pads 241. The calibration pusher 245 linearly moves from the outer side of the substrate W to push the substrate W toward the first spacer 235 side. The side portion of the substrate W pushed by the calibration pusher 245 is in close contact with the inner portion 238 of the first upper end portion 237. The inner side surface 238 of the first upper end portion 237 is provided at a reference position for aligning the positions of the substrate W. The substrate W whose positions are aligned is picked up by the transfer robot 220.
圖7係顯示按照本發明之實施形態而被提供於冷卻室內的構成之俯視圖。 Fig. 7 is a plan view showing a configuration provided in a cooling chamber according to an embodiment of the present invention.
若參照圖7，則在冷卻室250之內部係包含冷卻板251、升降銷255及校準推桿260。 Referring to Fig. 7, a cooling plate 251, a lift pin 255, and a calibration pusher 260 are included in the interior of the cooling chamber 250.
冷卻板251係設為具有預定厚度的圓板，且具有與基板W相應的、或是比基板W還更大的半徑。在冷卻板251之上面係置放有基板W。在冷卻板251之內部係形成有冷卻流路(未圖示)。冷卻流路係提供於冷卻板251之各區域，且作為循環通路來提供冷卻流體。冷卻流體係通過冷卻流體供應管線(supply line)253而朝向冷卻流路流入，且在循環於冷卻流路之後，通過冷卻流體供應管線253而回收。 在冷卻流體循環之期間，冷卻板251和基板W會被冷卻。 The cooling plate 251 is set to have a circular plate having a predetermined thickness and has a radius corresponding to the substrate W or larger than the substrate W. A substrate W is placed on the upper surface of the cooling plate 251. A cooling flow path (not shown) is formed inside the cooling plate 251. A cooling flow path is provided in each region of the cooling plate 251 and serves as a circulation passage to provide a cooling fluid. The cooling flow system flows into the cooling flow path through the cooling fluid supply line 253, and is recovered through the cooling fluid supply line 253 after circulating in the cooling flow path. The cooling plate 251 and the substrate W are cooled during the circulation of the cooling fluid.
在冷卻板251係形成有銷孔252。銷孔252係形成有複數個以作為從冷卻板251之上面朝向底面提供的貫通孔。依據實施形態，銷孔252係形成有三個，且配置成三角形狀。 A pin hole 252 is formed in the cooling plate 251. The pin holes 252 are formed in plural as a through hole provided from the upper surface of the cooling plate 251 toward the bottom surface. According to the embodiment, the pin holes 252 are formed in three and are arranged in a triangular shape.
升降銷255係位在銷孔252內。升降銷255係可以利用驅動部(未圖示)之驅動沿著銷孔252而朝向上下方向移動。升降銷255係在基板W之裝載(loading)/卸載(unloading)時，朝向上下方向移動，而在基板W之冷卻製程時位在銷孔252內。 The lift pins 255 are positioned within the pin holes 252. The lift pin 255 is movable in the vertical direction along the pin hole 252 by driving of a driving portion (not shown). The lift pins 255 move in the up and down direction during loading/unloading of the substrate W, and are located in the pin holes 252 during the cooling process of the substrate W.
校準推桿260係在基板W冷卻製程完成之後，推基板W以整齊排列位置。校準推桿260係包含第1推桿至第3推桿261、262、263及驅動部(未圖示)。 The calibration pusher 260 pushes the substrate W in a neatly arranged position after the substrate W cooling process is completed. The calibration pusher 260 includes first to third pushers 261, 262, and 263 and a driving unit (not shown).
第1推桿至第3推桿261、262、263係在冷卻板251之上面配置成三角形狀。第1推桿至第3推桿261、262、263係位在各基板W之外側。 The first to third push rods 261, 262, and 263 are arranged in a triangular shape on the upper surface of the cooling plate 251. The first pusher to the third pusher 261, 262, and 263 are positioned on the outer side of each of the substrates W.
驅動部係使第1推桿至第3推桿261、262、263移動。驅動部係如圖8般地使第1推桿261和第2推桿262朝向冷卻板251之中心方向第1次移動，且如圖9般地使第3推桿263朝向冷卻板251之中心方向第2次移動。基板W之一側部係可藉由第1推桿261和第2推桿262來推，且朝向第3推桿263側第1次移動，而另一側部則被推向第3推桿263並第2次移動以位在整齊排列地點。在基板W之位置整齊排列之後，升降銷255進行升降，且基板W從 冷卻板251卸載。 The drive unit moves the first to third push rods 261, 262, and 263. As shown in FIG. 8, the driving unit first moves the first push rod 261 and the second push rod 262 toward the center of the cooling plate 251, and the third push rod 263 faces the center of the cooling plate 251 as shown in FIG. The second movement of the direction. One side of the substrate W can be pushed by the first push rod 261 and the second push rod 262, and moved toward the third push rod 263 side for the first time, and the other side portion is pushed toward the third push rod. 263 and the second move to position in a neat arrangement. After the positions of the substrate W are aligned, the lift pins 255 are lifted and lowered, and the substrate W is lifted. The cooling plate 251 is unloaded.
若再次參照圖1，則製程室300係朝向第1方向X而位在框架210之後方。製程室300係可提供複數個，且在第2方向Y配置成一排。製程室300係提供執行對基板之製程處理的空間。在製程室300之一側壁係形成有開口(未圖示)。開口係提供作為基板在框架210之內部與製程室300之內部之間進行出入的通路。開口係可藉由門扉(未圖示)來開閉。在製程室300內係執行用以製造半導體或是平板顯示面板的多種製程。依據實施形態，則在製程室300內係可以執行灰化(ashing)製程、或是蝕刻(etching)製程。此製程係使製程室300之內部減壓至真空狀態或是比常壓還低的壓力來執行。製程室300之內部壓力調節係藉由與形成於製程室300之排氣孔連結的真空泵(未圖示)之驅動所進行。近來因真空泵之性能提高，而不需要花太長時間將製程室300之內部維持於真空。因此，即便製程室300之內部因與框架210之內部的連通而維持常壓狀態亦可迅速地減壓至真空狀態。 Referring again to FIG. 1, the process chamber 300 is positioned behind the frame 210 in the first direction X. The process chamber 300 is provided in plurality and arranged in a row in the second direction Y. The process chamber 300 provides a space for performing a process for the substrate. An opening (not shown) is formed in one side wall of the process chamber 300. The opening is provided as a passage for the substrate to enter and exit between the inside of the frame 210 and the inside of the process chamber 300. The opening can be opened and closed by a threshold (not shown). A variety of processes for fabricating semiconductor or flat panel display panels are performed within the process chamber 300. According to the embodiment, an ashing process or an etching process can be performed in the process chamber 300. This process is performed by depressurizing the inside of the process chamber 300 to a vacuum state or a pressure lower than normal pressure. The internal pressure adjustment of the process chamber 300 is performed by driving a vacuum pump (not shown) connected to the exhaust port formed in the process chamber 300. Recently, the performance of the vacuum pump has been improved, and it is not necessary to take too long to maintain the inside of the process chamber 300 in a vacuum. Therefore, even if the inside of the process chamber 300 is maintained in a normal pressure state due to communication with the inside of the frame 210, the pressure can be quickly reduced to a vacuum state.
上述的基板處理裝置10係與專利文獻1所揭示之基板處理裝置有所不同且不具備負載鎖定室和轉運室(transfer chamber)。因而，基板處理裝置10可小型化，且可減少基板處理裝置10之整體面積。 The substrate processing apparatus 10 described above is different from the substrate processing apparatus disclosed in Patent Document 1 and does not include a load lock chamber and a transfer chamber. Therefore, the substrate processing apparatus 10 can be miniaturized, and the overall area of the substrate processing apparatus 10 can be reduced.
以下，對利用上述之基板處理裝置來處理基板的方法加以說明。 Hereinafter, a method of processing a substrate by the above substrate processing apparatus will be described.
基板處理方法係包含基板拉出階段、校準階段、製程 處理前階段、製程處理階段、冷卻階段及基板收納階段。 The substrate processing method includes a substrate pull-out phase, a calibration phase, and a process Pre-treatment stage, process processing stage, cooling stage and substrate storage stage.
基板拉出階段係使轉運機器人220之機械手221驅動以拉出收納於卡匣C中的基板W。 The substrate pulling-out phase drives the robot 221 of the transfer robot 220 to pull out the substrate W housed in the cassette C.
校準階段係使轉運機器人220將基板W轉運至校準室230之內部，且在校準室230內整齊排列基板W之位置。轉運機器人220係將基板W安裝於第1襯墊235及第2襯墊241。校準推桿245是朝向支撐板231之中心方向移動以推基板W。基板W係密接於第1襯墊235之第1上端部237的內側面238以使位置整齊排列。 The calibration phase causes the transfer robot 220 to transport the substrate W to the inside of the calibration chamber 230, and the positions of the substrate W are aligned in the calibration chamber 230. The transfer robot 220 mounts the substrate W on the first spacer 235 and the second spacer 241. The calibration pusher 245 is moved toward the center of the support plate 231 to push the substrate W. The substrate W is in close contact with the inner side surface 238 of the first upper end portion 237 of the first spacer 235 so as to be aligned.
製程處理前階段係使轉運機器人220拾取校準階段完成後的基板W並轉運至製程室300之內部。 The pre-process processing stage causes the transfer robot 220 to pick up the substrate W after the completion of the calibration phase and transfer it to the inside of the process chamber 300.
製程處理階段係將製程室300之內部減壓至真空狀態，且將製程氣體提供至製程室300之內部以處理基板W。在製程處理階段的基板W係加熱至高溫。製程處理階段完成之後，製程室300之內部的壓力會上升並維持於常壓狀態，而可開放門扉。轉運機器人220係拉出基板W並轉運至冷卻室250之內部。 The process processing stage depressurizes the inside of the process chamber 300 to a vacuum state, and supplies a process gas to the inside of the process chamber 300 to process the substrate W. The substrate W in the process processing stage is heated to a high temperature. After the process processing phase is completed, the internal pressure of the process chamber 300 rises and remains at a normal pressure state, and the threshold can be opened. The transfer robot 220 pulls out the substrate W and transports it to the inside of the cooling chamber 250.
冷卻階段係冷卻製程處理完成後的基板W。基板W係從轉運機器人220傳遞至升降銷255，且藉由升降銷255之下降而置放於冷卻板251。可通過冷卻流體供應管線253將冷卻流體供應至冷卻流路，冷卻流體循環於冷卻流路，將基板W予以冷卻。在基板W之冷卻完成之後，第1推桿261和第2推桿262朝向冷卻板251之中心方向第1次移動以推基板W之一側部。然後，第3推桿263朝向冷卻 板251之中心方向第2次移動以推基板W之另一側部。藉由此過程，可整齊排列基板W之位置。然後，升降銷255上升並從冷卻板251拾取基板W。轉運機器人220係從升降銷255傳來基板W。 The cooling stage is a substrate W after the cooling process is completed. The substrate W is transferred from the transfer robot 220 to the lift pins 255, and is placed on the cooling plate 251 by the lowering of the lift pins 255. The cooling fluid may be supplied to the cooling flow path through the cooling fluid supply line 253, and the cooling fluid is circulated to the cooling flow path to cool the substrate W. After the cooling of the substrate W is completed, the first push rod 261 and the second push rod 262 are moved first toward the center direction of the cooling plate 251 to push one side portion of the substrate W. Then, the third push rod 263 is facing the cooling The center direction of the plate 251 is moved a second time to push the other side of the substrate W. By this process, the position of the substrate W can be aligned. Then, the lift pins 255 are raised and the substrate W is picked up from the cooling plate 251. The transfer robot 220 transmits the substrate W from the lift pins 255.
基板收納階段係使轉運機器人220轉運基板W並將基板W裝載於卡匣C內。 In the substrate storage stage, the transfer robot 220 transports the substrate W and loads the substrate W in the cassette C.
依據上述之基板處理方法的情況，由於是使單一的轉運機器人220將基板W轉運至卡匣C與製程室300之間，所以轉運路徑變短，且基板W在複數個單元之間的傳遞最少化而可縮短製程時間。製程時間縮短可提高裝置整體的製程處理效率。 According to the above-described substrate processing method, since the single transfer robot 220 transfers the substrate W between the cassette C and the process chamber 300, the transfer path becomes short, and the transfer of the substrate W between the plurality of units is minimized. It can shorten the process time. The shortened process time can improve the overall process efficiency of the device.
圖10係顯示本發明之另一實施形態的基板處理裝置之剖視圖。 Figure 10 is a cross-sectional view showing a substrate processing apparatus according to another embodiment of the present invention.
參照圖10，則校準室230a、230b和冷卻室250a、250b係朝向第2方向Y而分別位在轉運機器人220之兩側。依據實施形態，則在框架210內係分別提供有一對的校準室230a、230b和冷卻室250a、250b。校準室230a、230b和冷卻室250a、250b係並排地配置於側方向。 Referring to Fig. 10, the calibration chambers 230a and 230b and the cooling chambers 250a and 250b are positioned on the opposite sides of the transfer robot 220 toward the second direction Y. According to the embodiment, a pair of calibration chambers 230a and 230b and cooling chambers 250a and 250b are provided in the frame 210, respectively. The calibration chambers 230a and 230b and the cooling chambers 250a and 250b are arranged side by side in the lateral direction.
以上之詳細說明只不過是例示本發明而已。又，前述內容係顯示本發明之較佳的實施形態，且為用以說明者，本發明係可以在多種的其他組合、變更及環境下使用。亦即，能夠在本說明書所揭示的發明概念之範圍、與前述揭示內容均等的範圍及/或該業界之技術或知識的範圍內進行變更或修正。前述的實施形態係說明用以體現本發明之 技術思想的最佳狀態，其亦能夠進行在本發明之具體適用領域及用途下所要求的多種變更。因而，以上發明之詳細說明不得將本發明限制於所揭示的實施形態中。又，所附申請專利範圍應解釋為亦包含其他的實施形態。 The above detailed description is merely illustrative of the invention. Further, the foregoing is a preferred embodiment of the present invention, and is intended to be illustrative, and the invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or corrections within the scope of the inventive concept disclosed in the present specification, the scope of the above-described disclosure, and/or the scope of the technology or knowledge of the industry. The foregoing embodiments are illustrative of the invention. The best mode of the technical idea is also capable of carrying out various modifications required in the specific field of use and use of the invention. Therefore, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Further, the scope of the appended claims should be construed as including other embodiments.
10‧‧‧基板處理裝置 10‧‧‧Substrate processing unit
100‧‧‧裝載埠 100‧‧‧Loading
200‧‧‧裝置前方端部模組 200‧‧‧ front end module
210‧‧‧框架 210‧‧‧Frame
211‧‧‧內部空間 211‧‧‧Internal space
220‧‧‧轉運機器人 220‧‧‧Transfer robot
221‧‧‧機械手 221‧‧‧ Robot
230‧‧‧校準室 230‧‧ ‧ calibration room
250‧‧‧冷卻室 250‧‧‧Cooling room
300‧‧‧製程室 300‧‧‧Processing Room
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| KR1020130038100A KR101433810B1 (en) | 2013-04-08 | 2013-04-08 | System and method for treating substrate |
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| JPH09219437A (en) * | 1996-02-13 | 1997-08-19 | Nikon Corp | Positioning apparatus |
| JP2000223547A (en) * | 1999-01-27 | 2000-08-11 | Dainippon Screen Mfg Co Ltd | Substrate processor |
| JP2000286325A (en) * | 1999-03-31 | 2000-10-13 | Jeol Ltd | Wafer aligning device |
| JP3801849B2 (en) * | 2000-08-07 | 2006-07-26 | 東京エレクトロン株式会社 | Substrate processing apparatus and method |
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| CN104103557B (en) | 2017-04-12 |
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