JP5903118B2 - Substrate processing equipment and method - Google Patents

Substrate processing equipment and method Download PDF

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JP5903118B2
JP5903118B2 JP2014040191A JP2014040191A JP5903118B2 JP 5903118 B2 JP5903118 B2 JP 5903118B2 JP 2014040191 A JP2014040191 A JP 2014040191A JP 2014040191 A JP2014040191 A JP 2014040191A JP 5903118 B2 JP5903118 B2 JP 5903118B2
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substrate
chamber
alignment
cooling
pusher
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JP2014204121A (en
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ジュ，チョルウォン
リー，セオクウィ
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ピーエスケー インコーポレイテッド
ピーエスケー インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers

Description

本発明は基板処理設備に関する。 The present invention relates to a substrate processing facility.

液晶ディスプレーパネルと半導体素子との製造のための基板処理設備は複数枚の基板を一括に処理できるクラスターシステムが一般的に採用されている。
特許文献１にはクラスターシステムの一例が開示されている。基板処理設備はロードステーション、移送ロボット、ロードロックチャンバー、搬送ロボット、及び工程チャンバーを含む。移送ロボットはロードステーションに安着されたＰＯＵＰとロードロックチャンバーとの間に基板を移送し、搬送ロボットはロードロックチャンバーと工程チャンバーとの間に、及び工程チャンバー相互間に基板を移送する。ロードロックチャンバーは２つの異なる環境、例えば大気圧環境と真空環境との間で緩衝空間の役割を果たし、基板が移送ロボットと搬送ロボットとによって移送される前に一時的に待機する。
上述した基板処理設備は環境条件の差異にロードロックチャンバーが必須的に提供され、ロードロックチャンバーの両側に移送ロボットが各々提供される。したがって、設備全体面積が増加し、移送ロボット、ロードロックチャンバー、及び搬送ロボットの間に基板伝達によって工程遅滞が発生する。工程遅滞は工程時間を増加させて設備全体の工程処理効率が減少される。 As a substrate processing facility for manufacturing a liquid crystal display panel and a semiconductor element, a cluster system capable of processing a plurality of substrates at a time is generally employed.
Patent Document 1 discloses an example of a cluster system. The substrate processing equipment includes a load station, a transfer robot, a load lock chamber, a transfer robot, and a process chamber. The transfer robot transfers the substrate between the POUP seated on the load station and the load lock chamber, and the transfer robot transfers the substrate between the load lock chamber and the process chamber and between the process chambers. The load lock chamber acts as a buffer space between two different environments, for example, an atmospheric pressure environment and a vacuum environment, and temporarily waits before the substrate is transferred by the transfer robot and the transfer robot.
The above-described substrate processing equipment is provided with a load lock chamber essential to the difference in environmental conditions, and a transfer robot is provided on each side of the load lock chamber. Therefore, the entire area of the equipment increases, and a process delay occurs due to substrate transfer between the transfer robot, the load lock chamber, and the transfer robot. Process delay increases process time and reduces the process efficiency of the entire facility.

韓国特許公開第１の０−２００８−０００４１１８号公報Korean Patent Publication No. 0-2008-0004118

本発明は設備面積を減少させることができる基板処理設備を提供する。
また、本発明は工程処理効率を向上させることができる基板処理設備を提供する。 The present invention provides a substrate processing facility that can reduce the facility area.
In addition, the present invention provides a substrate processing facility that can improve process processing efficiency.

本発明の実施形態による基板処理設備は、基板が収納されたカセットが置かれるロードポートと、基板に対する工程処理が遂行される工程チャンバーと、前記ロードポートと前記工程チャンバーとの間に提供され、内部に空間が形成されたフレームと、前記フレームの内部に位置し、前記カセットと前記工程チャンバーとの間に基板を移送する移送ロボットと、を含む。 A substrate processing facility according to an embodiment of the present invention is provided between a load port in which a cassette in which a substrate is stored is placed, a process chamber in which a process for a substrate is performed, and the load port and the process chamber. A frame in which a space is formed; and a transfer robot that is located inside the frame and transfers a substrate between the cassette and the process chamber.

また、前記フレームの内部に提供され、基板の位置が整列されるアライメントチャンバーと、前記フレームの内部に提供され、工程が完了された基板が冷却される冷却チャンバーと、をさらに包含することができる。 In addition, it may further include an alignment chamber provided in the frame and in which the position of the substrate is aligned, and a cooling chamber provided in the frame and in which the substrate that has been processed is cooled. .

また、前記移送ロボット、前記アライメントチャンバー、及び前記冷却チャンバーは、同一空間に位置することができる。 The transfer robot, the alignment chamber, and the cooling chamber may be located in the same space.

また、前記アライメントチャンバーと前記冷却チャンバーとは、上下方向に積層され得る。 The alignment chamber and the cooling chamber may be stacked in the vertical direction.

また、前記アライメントチャンバーと前記冷却チャンバーとは、側方向に並べに提供され得る。 The alignment chamber and the cooling chamber may be provided side by side in the lateral direction.

また、前記ロードポート、前記移送ロボット、及び前記工程チャンバーは、順次的に一列に配置され、前記アライメントチャンバーと前記冷却チャンバーとは、前記ロードポート、前記移送ロボット、及び前記工程チャンバーが一列に配置された線上から外れて配置され得る。 Further, the load port, the transfer robot, and the process chamber are sequentially arranged in a line, and the alignment chamber and the cooling chamber are arranged in a line with the load port, the transfer robot, and the process chamber. Can be placed off the marked line.

また、前記アライメントチャンバー内に位置する支持板と、前記支持板の上面に固定位置され、基板が置かれる第１の及び第２のパッドと、前記支持板の上面に位置し、前記支持板の中心方向に移動して基板を押すアライメントプッシャーと、をさらに包含することができる。 A support plate located in the alignment chamber; a first and second pad fixed on the upper surface of the support plate; and a substrate placed on the upper surface of the support plate; An alignment pusher that moves in the central direction and pushes the substrate can be further included.

また、前記第１のパッドは、基板が置かれる第１の本体と、前記第１の本体から上部に突出され、内側面が基板の曲率半径に相応する曲率半径を有する第１の上端部を有し、前記第２のパッドは、基板が置かれる第２の本体と、前記第２の本体から上部に突出され、内側面が基板の曲率半径より大きい曲率半径を有する第２の上端部とを有し、前記アライメントプッシャーは、基板の側部が前記第１の上端部の内側面に密着されるように基板を押すことができる。 The first pad includes a first body on which the substrate is placed, and a first upper end projecting upward from the first body and having an inner surface having a radius of curvature corresponding to the radius of curvature of the substrate. The second pad has a second body on which the substrate is placed, and a second upper end projecting upward from the second body and having an inner surface with a radius of curvature greater than the radius of curvature of the substrate; The alignment pusher can push the substrate so that the side portion of the substrate is in close contact with the inner surface of the first upper end portion.

また、前記冷却チャンバーの内側に位置すれば、内部に冷却流路が形成された冷却板と、前記冷却板に形成されたピンホールにしたがって上下方向に移動する複数のリフトピンと、前記冷却板に置かれる基板の側部を前記冷却板の中心方向に押して基板位置を整列するアライメントプッシャーと、をさらに包含することができる。 If the cooling plate is located inside the cooling chamber, a cooling plate having a cooling channel formed therein, a plurality of lift pins that move in the vertical direction according to pinholes formed in the cooling plate, and the cooling plate An alignment pusher that aligns the substrate position by pushing the side of the substrate to be placed toward the center of the cooling plate may be further included.

また、前記アライメントプッシャーは、前記冷却板の周辺にしたがって互いに離隔して配置される第１のプッシャー乃至第３のプッシャーと、前記第１のプッシャーと前記第２のプッシャーとが前記冷却板の中心方向に基板の一側部を１次に押し、前記第３のプッシャーが前記冷却板の中心方向に基板の他側部を２次に押すように前記第１のプッシャー乃至前記第３のプッシャーを駆動させる駆動部と、を包含することができる。 The alignment pusher includes a first pusher to a third pusher that are spaced apart from each other according to a periphery of the cooling plate, and the first pusher and the second pusher are located at the center of the cooling plate. The first to third pushers are pushed so that one side of the substrate is pushed first in the direction and the third pusher pushes the other side of the substrate second in the direction of the center of the cooling plate. And a driving unit to be driven.

本発明の実施形態による基板処理方法は、カセットに収納された基板を引き出す基板の引出し段階と、工程チャンバーの内部へ基板を提供する工程処理前段階と、工程処理が完了された基板を前記カセットに収納させる基板収納段階と、を含み、前記基板の引出し段階、前記工程準備段階、及び前記基板収納段階で基板は、同一の移送ロボットによって移送され得る。 According to an embodiment of the present invention, there is provided a substrate processing method including: a substrate drawing step for pulling out a substrate housed in a cassette; a pre-process step for providing a substrate to a process chamber; The substrate may be transferred by the same transfer robot in the substrate drawing step, the process preparation step, and the substrate storage step.

また、前記工程チャンバーの内部に基板が提供される前に、アライメントチャンバー内に基板を提供して基板位置を整列するアライメント段階をさらに含み、前記アライメントチャンバーと前記工程チャンバーとの間に基板移送は、前記移送ロボットによって行われ得る。 The method further includes an alignment step of providing a substrate in the alignment chamber and aligning a substrate position before the substrate is provided in the process chamber, and transferring the substrate between the alignment chamber and the process chamber. , Can be performed by the transfer robot.

また、前記第１のパッドの上端部の内側面は、前記基板の曲率半径に相応する曲率半径を有することができる。 The inner surface of the upper end of the first pad may have a radius of curvature corresponding to the radius of curvature of the substrate.

また、前記工程チャンバーから引き出された基板を冷却チャンバーの内部へ提供して、工程処理が完了された基板を冷却する冷却段階をさらに含み、前記工程チャンバーと前記冷却チャンバーとの間に基板移送は、前記移送ロボットによって行われ得る。 In addition, the method may further include a cooling step of providing the substrate drawn out from the process chamber to the inside of the cooling chamber and cooling the substrate after the process processing is completed, and transferring the substrate between the process chamber and the cooling chamber. , Can be performed by the transfer robot.

また、前記冷却段階は、冷却板の上面に基板が置かれ、前記冷却板の周辺にしたがって離隔して配置された第１のプッシャーと第２のプッシャーとが前記冷却板の中心方向に移動して基板の一側部を１次に押し、第３のプッシャーが前記冷却板の中心方向に移動して基板の他側部を２次に押して基板の位置を整列することができる。 In the cooling step, a substrate is placed on the upper surface of the cooling plate, and a first pusher and a second pusher, which are spaced apart according to the periphery of the cooling plate, move toward the center of the cooling plate. Then, one side of the substrate is pushed first, and the third pusher moves toward the center of the cooling plate to push the other side of the substrate second, thereby aligning the position of the substrate.

本発明によると、設備が小型化されるので、設備面積が減少される。
また、本発明によると、基板移送経路が減少するので、設備全体の工程処理効率を向上される。 According to the present invention, since the facility is downsized, the facility area is reduced.
Further, according to the present invention, since the substrate transfer path is reduced, the process efficiency of the entire equipment can be improved.

本発明の実施形態による基板処理設備を簡略に示す平面図である。It is a top view which shows simply the substrate processing equipment by the embodiment of the present invention. 図１のアライメントチャンバーと冷却チャンバーとの配置を示す図面である。It is drawing which shows arrangement | positioning of the alignment chamber of FIG. 1, and a cooling chamber. 本発明の他の実施形態による基板処理設備を簡略に示す平面図である。It is a top view which shows simply the substrate processing installation by other embodiment of this invention. 本発明の実施形態にしたがってアライメントチャンバー内に提供される構成を示す平面図である。FIG. 6 is a plan view illustrating a configuration provided in an alignment chamber according to an embodiment of the present invention. 図４のＡ−Ａ’線に沿う断面図である。FIG. 5 is a cross-sectional view taken along line A-A ′ of FIG. 4. 本発明の実施形態による第１のパッドと第２のパッドとを示す斜視図である。FIG. 3 is a perspective view showing a first pad and a second pad according to an embodiment of the present invention. 本発明の実施形態にしたがって冷却チャンバー内に提供される構成を示す平面図である。FIG. 6 is a plan view illustrating a configuration provided in a cooling chamber according to an embodiment of the present invention. 冷却チャンバー内で基板が整列される過程を順次的に示す図面である。4 is a diagram sequentially illustrating a process of aligning substrates in a cooling chamber. 冷却チャンバー内で基板が整列される過程を順次的に示す図面である。4 is a diagram sequentially illustrating a process of aligning substrates in a cooling chamber. 本発明の他の実施形態による基板処理設備を示す断面図である。It is sectional drawing which shows the substrate processing equipment by other embodiment of this invention.

以下、本発明の実施形態を添付された図面を参照してさらに詳細に説明する。本発明の実施形態は様々な形態に変形され得り、本発明の範囲が以下の実施形態に限定されることとして解釈されてはならない。本実施形態は当業界で平均的な知識を有する者に本発明をさらに完全に説明するために提供されることである。したがって、図面での要素の形状はより明確な説明を強調するために誇張されている。 Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings is exaggerated to emphasize a clearer description.

図１は本発明の実施形態による基板処理設備を簡略に示す平面図である。 FIG. 1 is a plan view schematically showing a substrate processing facility according to an embodiment of the present invention.

図１を参照すれば、基板処理設備１０はロードポート１００、設備前方端部モジュール（ｅｑｕｉｐｍｅｎｔ ｆｒｏｎｔ ｅｎｄ ｍｏｄｕｌｅ、ＥＦＥＭ）２００、及び工程チャンバー３００を含む。ロードポート１００、設備前方端部モジュール２００、及び工程チャンバー３００は一方向に配置される。以下、ロードポート１００、設備前方端部モジュール２００、及び工程チャンバー３００が配列された方向を第１の方向Ｘであると定義し、上部から見る時、第１の方向Ｘと垂直である方向を第２の方向Ｙであると定義する。 Referring to FIG. 1, the substrate processing facility 10 includes a load port 100, an equipment front end module (EFEM) 200, and a process chamber 300. The load port 100, the equipment front end module 200, and the process chamber 300 are arranged in one direction. Hereinafter, the direction in which the load port 100, the equipment front end module 200, and the process chamber 300 are arranged is defined as the first direction X, and when viewed from above, the direction perpendicular to the first direction X is defined as The second direction Y is defined.

ロードポート１００は設備前方端部モジュール２００の前方に位置する。ロードポート１００は複数個提供され、第２の方向Ｙにしたがって一列に配置される。ロードポート１００にはカセットＣが置かれる。カセットＣには複数枚の基板が積層されて収納される。カセットＣには工程に提供される基板及び工程処理が完了された基板が収納される。 The load port 100 is located in front of the equipment front end module 200. A plurality of load ports 100 are provided and arranged in a line according to the second direction Y. A cassette C is placed in the load port 100. In the cassette C, a plurality of substrates are stacked and stored. The cassette C stores a substrate provided for the process and a substrate for which the process has been completed.

前方設備端部モジュール２００はカセットＣと工程チャンバー３００との間に基板を移送する。前方設備端部モジュール２００はフレーム２１０、移送ロボット２２０、アライメントチャンバー２３０、及び冷却チャンバー２５０を含む。
フレーム２１０はロードポート１００と工程チャンバー３００との間に配置される。フレーム２１０の内部には空間が形成される。フレーム２１０の内部空間２１１は移送ロボット２２０の移動及び移送ロボット２２０のハンド２２１移動が妨害されないように充分な広さに提供される。 The front equipment end module 200 transfers the substrate between the cassette C and the process chamber 300. The front equipment end module 200 includes a frame 210, a transfer robot 220, an alignment chamber 230, and a cooling chamber 250.
The frame 210 is disposed between the load port 100 and the process chamber 300. A space is formed inside the frame 210. The internal space 211 of the frame 210 is provided with a sufficient size so that the movement of the transfer robot 220 and the movement of the hand 221 of the transfer robot 220 are not obstructed.

移送ロボット２２０はフレーム１１０内へ提供される。移送ロボット２２０は単一ロボットで提供され、基板が積載されるハンド２２１を有する。移送ロボット２２０はカセットＣ、アライメントチャンバー２３０、冷却チャンバー２５０、及び工程チャンバー３００の相互間に基板を移送することができる。 A transfer robot 220 is provided in the frame 110. The transfer robot 220 is provided as a single robot and has a hand 221 on which a substrate is loaded. The transfer robot 220 can transfer the substrate among the cassette C, the alignment chamber 230, the cooling chamber 250, and the process chamber 300.

アライメントチャンバー２３０と冷却チャンバー２５０とはフレーム２１０の内部に位置する。アライメントチャンバー２３０は工程チャンバー３００又はカセットＣに基板が提供される前に、基板位置が整列される空間を提供する。冷却チャンバー２５０は工程チャンバー３００で工程処理が完了された基板が冷却される空間を提供する。 The alignment chamber 230 and the cooling chamber 250 are located inside the frame 210. The alignment chamber 230 provides a space in which the substrate positions are aligned before the substrate is provided to the process chamber 300 or the cassette C. The cooling chamber 250 provides a space in which a substrate that has been processed in the process chamber 300 is cooled.

アライメントチャンバー２３０と冷却チャンバー２５０とはロードポート１００、移送ロボット２２０、及び工程チャンバー３００が一列に配置されて形成する線上から外れて位置することができる。実施形態によれば、アライメントチャンバー２３０と冷却チャンバー２５０とは第２の方向Ｙに移送ロボット２２０と一列に配置され得る。 The alignment chamber 230 and the cooling chamber 250 may be positioned off the line formed by the load port 100, the transfer robot 220, and the process chamber 300 being arranged in a row. According to the embodiment, the alignment chamber 230 and the cooling chamber 250 may be arranged in line with the transfer robot 220 in the second direction Y.

アライメントチャンバー２３０と冷却チャンバー２５０とは図２のように上下方向に積層されて提供され得る。これと異なりに、アライメントチャンバーと冷却チャンバーとは図３のように同一の高さで側方向に並べに配置され得る。 The alignment chamber 230 and the cooling chamber 250 may be provided by being stacked vertically as shown in FIG. In contrast, the alignment chamber and the cooling chamber may be arranged side by side at the same height as shown in FIG.

図４は本発明の実施形態にしたがってアライメントチャンバー内に提供される構成を示す平面図であり、図５は図４のＡ−Ａ’線に沿う断面図である。 FIG. 4 is a plan view showing a configuration provided in the alignment chamber according to the embodiment of the present invention, and FIG. 5 is a cross-sectional view taken along the line A-A ′ of FIG. 4.

図４及び図５を参照すれば、アライメントチャンバー２３０の内部には支持板２３１、第１のパッド２３５、第２のパッド２４１、及びアライメントプッシャー２４５が提供される。 Referring to FIGS. 4 and 5, a support plate 231, a first pad 235, a second pad 241, and an alignment pusher 245 are provided in the alignment chamber 230.

支持板２３１は所定の厚さを有する板とし、基板Ｗより大きい面積を有する。支持板２３１の上面には第１のパッド２３５、第２のパッド２４１、及びアライメントプッシャー２４５が提供される。 The support plate 231 is a plate having a predetermined thickness and has a larger area than the substrate W. A first pad 235, a second pad 241, and an alignment pusher 245 are provided on the upper surface of the support plate 231.

第１のパッド２３５は支持板２３１の上面に固定位置し、基板Ｗの一側部を支持する。図６の（ａ）のように、第１のパッド２３５は第１の本体２３６と第１の上端部２３７とを有する。第１の本体２３６は所定の厚さを有する板として提供される。第１の本体２３６の上面には基板Ｗが置かれる。第１の上端部２３７は第１の本体２３６の上面一部から上部に突出される。第１の上端部２３７は内側面２３８が基板Ｗの半径曲率に相応する曲率半径を有する。実施形態によれば、第１のパッド２３５は一対が提供され、互いに離隔して配置される。 The first pad 235 is fixedly positioned on the upper surface of the support plate 231 and supports one side of the substrate W. As shown in FIG. 6A, the first pad 235 has a first main body 236 and a first upper end 237. The first body 236 is provided as a plate having a predetermined thickness. A substrate W is placed on the upper surface of the first body 236. The first upper end 237 protrudes upward from a part of the upper surface of the first main body 236. The first upper end 237 has a radius of curvature corresponding to the radius of curvature of the substrate W at the inner surface 238. According to the embodiment, a pair of first pads 235 are provided and spaced apart from each other.

第２のパッド２４１は支持板２３１の上面に固定位置し、基板Ｗの他側部を支持する。第２のパッド２４１は基板Ｗの中心を基準に第１のパッド２３５と対向する位置に提供され得る。実施形態によれば、第２のパッド２４１は一対が提供され、基板Ｗの中心を基準に第１のパッド２３５と対抗して位置する。図６の（ｂ）のように、第２のパッド２４１は第２の本体２４２と第２の上端部２４３とを有する。第２の本体２４２は所定の厚さを有する板として提供される。第２の本体２４２の上面には基板Ｗが置かれる。第２の上端部２４３は第２の本体２４２の上面一部から上部に突出される。第２の上端部２４３は内側面２４４が基板Ｗの半径曲率より大きい曲率半径を有する。そして、第２の上端部２４３の内側面２４４と第１の上端部２３７の内側面２３８との間の距離は基板Ｗ直径より大きくなり得る。基板Ｗは第２のパッド２４１側に偏向されて第１のパッド２３５と第２のパッド２４１とに安着され得る。第２の上端部２４３の内側面２４４の大きい曲率半径は基板Ｗが安全に第２の本体２４２に置かれるようにする。 The second pad 241 is fixed on the upper surface of the support plate 231 and supports the other side of the substrate W. The second pad 241 may be provided at a position facing the first pad 235 with respect to the center of the substrate W. According to the embodiment, a pair of the second pads 241 is provided and is positioned to face the first pads 235 with respect to the center of the substrate W. As shown in FIG. 6B, the second pad 241 includes a second main body 242 and a second upper end 243. The second body 242 is provided as a plate having a predetermined thickness. A substrate W is placed on the upper surface of the second main body 242. The second upper end 243 protrudes upward from a part of the upper surface of the second main body 242. The second upper end 243 has an inner surface 244 with a radius of curvature greater than the radius of curvature of the substrate W. The distance between the inner surface 244 of the second upper end 243 and the inner surface 238 of the first upper end 237 can be larger than the substrate W diameter. The substrate W can be deflected toward the second pad 241 and can be seated on the first pad 235 and the second pad 241. The large radius of curvature of the inner surface 244 of the second upper end 243 allows the substrate W to be safely placed on the second body 242.

アライメントプッシャー２４５は第２のパッド２４１の間に位置する。アライメントプッシャー２４５は基板Ｗの外側から直線移動して第１のパッド２３５側に基板Ｗを押す。アライメントプッシャー２４５によって押さえられた基板Ｗは側部が第１の上端部２３７の内側面２３８に密着される。第１の上端部２３７の内側面２３８は基板Ｗの位置を整列する基準位置に提供される。位置が整列された基板Ｗは移送ロボット２２０によってピックアップされる。 The alignment pusher 245 is located between the second pads 241. The alignment pusher 245 moves linearly from the outside of the substrate W and pushes the substrate W toward the first pad 235 side. The side of the substrate W pressed by the alignment pusher 245 is in close contact with the inner surface 238 of the first upper end 237. The inner surface 238 of the first upper end 237 is provided as a reference position for aligning the positions of the substrates W. The substrate W whose position is aligned is picked up by the transfer robot 220.

図７は本発明の実施形態にしたがって冷却チャンバー内に提供される構成を示す平面図である。 FIG. 7 is a plan view illustrating a configuration provided in a cooling chamber according to an embodiment of the present invention.

図７を参照すれば、冷却チャンバー２５０の内部には冷却板２５１、リフトピン２５５、及びアライメントプッシャー２６０を含む。 Referring to FIG. 7, the cooling chamber 250 includes a cooling plate 251, lift pins 255, and an alignment pusher 260.

冷却板２５１は所定の厚さを有する円板とし、基板Ｗに相応するか、或いはそれより大きい半径を有する。冷却板２５１の上面には基板Ｗが置かれる。冷却板２５１の内部には冷却流路（図示せず）が形成される。冷却流路は冷却板２５１の各領域に提供され、冷却流体が循環通路として提供される。冷却流体は冷却流体供給ライン２５３を通じて冷却流路へ流入され、冷却流路を循環した後、冷却流体供給ライン２５３を通じて回収される。冷却流体が循環する間に、冷却板２５１と基板Ｗとが冷却される。 The cooling plate 251 is a disc having a predetermined thickness and has a radius corresponding to or larger than that of the substrate W. A substrate W is placed on the upper surface of the cooling plate 251. A cooling channel (not shown) is formed inside the cooling plate 251. A cooling channel is provided in each region of the cooling plate 251 and cooling fluid is provided as a circulation path. The cooling fluid flows into the cooling flow path through the cooling fluid supply line 253, circulates through the cooling flow path, and is collected through the cooling fluid supply line 253. While the cooling fluid circulates, the cooling plate 251 and the substrate W are cooled.

冷却板２５１にはピンホール２５２が形成される。ピンホール２５２は冷却板２５１の上面から底面に提供される貫通ホールとして複数個形成される。実施形態によれば、ピンホール２５２は３つ形成され、三角形状に配置される。 A pinhole 252 is formed in the cooling plate 251. A plurality of pin holes 252 are formed as through holes provided from the upper surface to the bottom surface of the cooling plate 251. According to the embodiment, three pinholes 252 are formed and arranged in a triangular shape.

ピンホール２５２にはリフトピン２５５が位置する。リフトピン２５５は駆動部（図示せず）の駆動でピンホール２５２にしたがって上下方向に移動することができる。リフトピン２５５は基板Ｗのローディング／アンローディングの時に、上下方向に移動し、基板Ｗの冷却工程の時にピンホール２５２内に位置する。 A lift pin 255 is located in the pinhole 252. The lift pin 255 can move in the vertical direction according to the pinhole 252 by driving of a driving unit (not shown). The lift pins 255 move in the vertical direction during loading / unloading of the substrate W, and are positioned in the pin holes 252 during the substrate W cooling process.

アライメントプッシャー２６０は基板Ｗ冷却工程が完了された後、基板Ｗを押して位置を整列する。アライメントプッシャー２６０は第１のプッシャー乃至第３のプッシャー２６１、２６２、２６３及び駆動部（図示せず）を含む。 After the substrate W cooling process is completed, the alignment pusher 260 pushes the substrate W to align the position. The alignment pusher 260 includes first to third pushers 261, 262, 263 and a driving unit (not shown).

第１のプッシャー乃至第３のプッシャー２６１、２６２、２６３は冷却板２５１の上面で三角形状に配置され得る。第１のプッシャー乃至第３のプッシャー２６１、２６２、２６３は各基板Ｗの外側に位置する。 The first to third pushers 261, 262, and 263 may be arranged in a triangular shape on the upper surface of the cooling plate 251. The first to third pushers 261, 262, and 263 are located outside each substrate W.

駆動部は第１のプッシャー乃至第３のプッシャー２６１、２６３、２６３を移動させる。駆動部は図８のように第１のプッシャー２６１と第２のプッシャー２６２とを冷却板２５１の中心方向に１次に移動させ、図９のように第３のプッシャー２６３を冷却板２５１の中心方向に２次に移動させる。基板Ｗは一側部が第１のプッシャー２６１と第２のプッシャー２６２とによって押されられ、第３のプッシャー２６３側に１次に移動し、他側部が第３のプッシャー２６３に押さえられて２次に移動して整列地点に位置する。基板Ｗ位置が整列された後、リフトピン２５５が昇降し、基板Ｗが冷却板２５１からアンローディングされる。 The driving unit moves the first to third pushers 261, 263, and 263. The drive unit moves the first pusher 261 and the second pusher 262 first in the direction of the center of the cooling plate 251 as shown in FIG. 8, and moves the third pusher 263 to the center of the cooling plate 251 as shown in FIG. Move in second direction. One side of the substrate W is pushed by the first pusher 261 and the second pusher 262, moves first to the third pusher 263 side, and the other side is pushed by the third pusher 263. Moves 2nd order and is located at the alignment point. After the position of the substrate W is aligned, the lift pins 255 are moved up and down, and the substrate W is unloaded from the cooling plate 251.

再び図１を参照すれば、工程チャンバー３００は第１の方向Ｘにフレーム２１０の後方に位置する。工程チャンバー３００は複数個提供され得り、第２の方向Ｙに一列に配置され得る。工程チャンバー３００は基板に対する工程処理を遂行する空間を提供する。工程チャンバー３００の一側壁には開口（図示せず）が形成される。開口はフレーム２１０の内部と工程チャンバー３００の内部との間に基板が出入する通路として提供される。開口はドア（図示せず）によって開閉される。工程チャンバー３００内では半導体又は平板表示パネルの製造のための多様な工程が遂行される。実施形態によれば、工程チャンバー３００内ではアッシング（Ａｓｈｉｎｇ）工程、又はエッチング（ｅｔｃｈｉｎｇ）工程が遂行されることができる。この工程は工程チャンバー３００の内部が真空状態又は常圧より低い圧力に減圧されて遂行される。工程チャンバー３００の内部圧力調節は工程チャンバー３００に形成された排気ホールと連結された真空ポンプ（図示せず）の駆動によって行われる。最近真空ポンプの性能向上によって、工程チャンバー３００の内部を真空に維持するのに時間があまりも長く所要されない。そのために、フレーム２１０の内部との連通によって工程チャンバー３００の内部が常圧状態を維持しても真空状態に迅速に減圧され得る。 Referring back to FIG. 1, the process chamber 300 is located behind the frame 210 in the first direction X. A plurality of process chambers 300 may be provided, and may be arranged in a row in the second direction Y. The process chamber 300 provides a space for performing a process on the substrate. An opening (not shown) is formed on one side wall of the process chamber 300. The opening is provided as a passage through which the substrate enters and exits between the inside of the frame 210 and the inside of the process chamber 300. The opening is opened and closed by a door (not shown). Various processes for manufacturing a semiconductor or a flat panel display are performed in the process chamber 300. According to the embodiment, an ashing process or an etching process may be performed in the process chamber 300. This process is performed by reducing the inside of the process chamber 300 to a vacuum state or a pressure lower than normal pressure. The internal pressure of the process chamber 300 is adjusted by driving a vacuum pump (not shown) connected to an exhaust hole formed in the process chamber 300. Due to the recent improvement in performance of vacuum pumps, it takes no long time to maintain the inside of the process chamber 300 in a vacuum. Therefore, even if the inside of the process chamber 300 maintains a normal pressure state due to the communication with the inside of the frame 210, the pressure can be quickly reduced to a vacuum state.

上述した基板処理設備１０は特許文献１に開示された基板処理設備と異なりにロードロックチャンバーとトランスファーチャンバーとを具備しない。したがって、設備１０が小型化され、設備１０の全体面積が減少され得る。 Unlike the substrate processing facility disclosed in Patent Document 1, the substrate processing facility 10 described above does not include a load lock chamber and a transfer chamber. Therefore, the facility 10 can be downsized and the entire area of the facility 10 can be reduced.

以下、上述した基板処理設備を利用して基板を処理する方法に対して説明する。 Hereinafter, a method for processing a substrate using the above-described substrate processing equipment will be described.

基板処理方法は基板の引出し段階、アライメント段階、工程処理の前段階、工程処理段階、冷却段階、及び基板収納段階を含む。 The substrate processing method includes a substrate drawing stage, an alignment stage, a pre-process process stage, a process process stage, a cooling stage, and a substrate storage stage.

基板の引出し段階は移送ロボット２２０のハンド２２１が駆動されてカセットＣに収納された基板Ｗを引き出す。 In the substrate drawing stage, the hand 221 of the transfer robot 220 is driven to pull out the substrate W stored in the cassette C.

アライメント段階は移送ロボット２２０が基板Ｗをアライメントチャンバー２３０の内部へ移送し、アライメントチャンバー２３０内で基板Ｗの位置を整列する。移送ロボット２２０は基板Ｗを第１の及び第２のパッド２３５、２４１に基板Ｗを安着する。アライメントプッシャー２４５が支持板２３１の中心方向に移動して基板Ｗを押す。基板Ｗは第１のパッド２３５の第１の上端部２３７の内側面２３８に密着されて位置が整列される。 In the alignment step, the transfer robot 220 transfers the substrate W into the alignment chamber 230 and aligns the position of the substrate W in the alignment chamber 230. The transfer robot 220 places the substrate W on the first and second pads 235 and 241. The alignment pusher 245 moves toward the center of the support plate 231 and pushes the substrate W. The substrate W is brought into close contact with the inner side surface 238 of the first upper end 237 of the first pad 235 so that the positions thereof are aligned.

工程処理の前段階はアライメント段階が完了された基板Ｗを移送ロボット２２０がピックアップして工程チャンバー３００の内部へ移送する。 In the pre-process process, the transfer robot 220 picks up the substrate W on which the alignment process has been completed, and transfers the substrate W into the process chamber 300.

工程段階は工程チャンバー３００の内部を真空状態に減圧し、工程チャンバー３００の内部へ工程ガスを提供して基板Ｗを処理する。工程段階で基板Ｗは高温に加熱される。工程段階の完了の後、工程チャンバー３００の内部は圧力が上昇して常圧状態に維持され、ドアが開放される。移送ロボット２２０は基板Ｗを引き出して冷却チャンバー２５０の内部へ移送する。 In the process step, the inside of the process chamber 300 is evacuated to a vacuum state, and a process gas is supplied to the inside of the process chamber 300 to process the substrate W. In the process step, the substrate W is heated to a high temperature. After completion of the process step, the pressure inside the process chamber 300 is increased and maintained at normal pressure, and the door is opened. The transfer robot 220 pulls out the substrate W and transfers it to the inside of the cooling chamber 250.

冷却段階は工程処理が完了された基板Ｗを冷却する。基板Ｗは移送ロボット２２０からリフトピン２５５に伝達され、リフトピン２５５の下降によって冷却板２５１に置かれる。冷却流体供給ライン２５３を通じて冷却流路に冷却流体が供給され、冷却流体が冷却流路を循環し、基板Ｗを冷却する。基板Ｗ冷却が完了された後、第１のプッシャー２６１と第２のプッシャー２６２とが冷却板２５１の中心方向に１次に移動して基板Ｗの一側部を押す。そして、第３のプッシャー２６３が冷却板２５１の中心方向に２次に移動して基板Ｗの他側部を押す。この過程によって、基板Ｗ位置が整列される。そして、リフトピン２５５が上昇して基板Ｗを冷却板２５１からピックアップする。移送ロボット２２０はリフトピン２５５から基板Ｗを伝えってもらう。 In the cooling step, the substrate W that has been processed is cooled. The substrate W is transmitted from the transfer robot 220 to the lift pins 255 and is placed on the cooling plate 251 when the lift pins 255 are lowered. A cooling fluid is supplied to the cooling flow path through the cooling fluid supply line 253, and the cooling fluid circulates through the cooling flow path to cool the substrate W. After the cooling of the substrate W is completed, the first pusher 261 and the second pusher 262 move first in the central direction of the cooling plate 251 and push one side of the substrate W. Then, the third pusher 263 moves secondarily toward the center of the cooling plate 251 and pushes the other side of the substrate W. By this process, the substrate W position is aligned. Then, the lift pins 255 are raised to pick up the substrate W from the cooling plate 251. The transfer robot 220 receives the substrate W from the lift pins 255.

基板収納段階は移送ロボット２２０が基板Ｗを移送してカセットＣ内に基板Ｗを積載する。 In the substrate storage stage, the transfer robot 220 transfers the substrate W and loads the substrate W in the cassette C.

上述した基板処理方法による場合、単一の移送ロボット２２０がカセットＣと工程チャンバー３００との間に基板Ｗを移送するので、移送経路が短くなり、複数のユニットの間に基板Ｗ伝達が最少化されて工程時間が短縮される。工程時間短縮は設備全体の工程処理効率を向上させる。 In the case of the substrate processing method described above, since the single transfer robot 220 transfers the substrate W between the cassette C and the process chamber 300, the transfer path is shortened, and the transfer of the substrate W is minimized among a plurality of units. As a result, the process time is shortened. Shortening the process time improves the process efficiency of the entire facility.

図１０は本発明のその他の実施形態による基板処理設備を示す断面図である。 FIG. 10 is a cross-sectional view showing a substrate processing facility according to another embodiment of the present invention.

図１０を参照すれば、アライメントチャンバー２３０ａ、２３０ｂと冷却チャンバー２５０ａ、２５０ｂとは第２の方向Ｙに移送ロボット２２０の両側に各々位置する。実施形態によれば、フレーム２１０内にはアライメントチャンバー２３０ａ、２３０ｂと冷却チャンバー２５０ａ、２５０ｂとが各々一対提供される。アライメントチャンバー２３０ａ、２３０ｂと冷却チャンバー２５０ａ、２５０ｂとは側方向に並べに配置される。 Referring to FIG. 10, the alignment chambers 230 a and 230 b and the cooling chambers 250 a and 250 b are located on both sides of the transfer robot 220 in the second direction Y, respectively. According to the embodiment, a pair of alignment chambers 230 a and 230 b and cooling chambers 250 a and 250 b are provided in the frame 210. The alignment chambers 230a and 230b and the cooling chambers 250a and 250b are arranged side by side in the lateral direction.

以上の詳細な説明は本発明を例示することに過ぎない。また、前述した内容は本発明の望ましい実施形態を示し、説明することであり、本発明は多様な他の組合、変更、及び環境で使用することができる。即ち、本明細書に開示された発明の概念の範囲、前述した開示内容と均等な範囲及び／又は当業界の技術又は知識の範囲内で変更又は修正が可能である。前述した実施形態は本発明の技術的思想を具現するための最善の状態を説明することであり、本発明の具体的な適用分野及び用途で要求される多様な変更も可能である。したがって、以上の発明の詳細な説明は開示された実施状態に本発明を制限しようとすることでない。また、添付された請求の範囲は他の実施状態も含むことであって解釈されなければならない。 The foregoing detailed description is merely illustrative of the invention. Also, the foregoing is intended to illustrate and describe the preferred embodiment of the present invention, which can be used in a variety of other combinations, modifications, and environments. That is, changes or modifications can be made within the scope of the inventive concept disclosed in the present specification, the scope equivalent to the above-described disclosure, and / or the skill or knowledge of the industry. The above-described embodiments are for explaining the best state for embodying the technical idea of the present invention, and various modifications required in specific application fields and applications of the present invention are possible. Accordingly, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other implementations.

１０・・・基板処理設備
１００・・・ロードポート
２００・・・設備前方端部モジュール
２１０・・・フレーム
２２０・・・移送ロボット
２３０・・・アライメントチャンバー
２３１・・・支持板
２３５・・・第１のパッド
２４１・・・第２のパッド
２４５・・・アライメントプッシャー
２５０・・・冷却チャンバー
２６０・・・アライメントプッシャー
２６１、２６２、２６３・・・プッシャー
３００・・・工程チャンバー 10 ... substrate processing equipment 100 ... load port 200 ... equipment front end module 210 ... frame 220 ... transfer robot 230 ... alignment chamber 231 ... support plate 235 ... first 1 pad 241, second pad 245, alignment pusher 250, cooling chamber 260, alignment pushers 261, 262, 263, pusher 300, process chamber

Claims (13)

基板が収納されたカセットが置かれるロードポートと、
基板に対する工程処理が遂行される工程チャンバーと、
前記ロードポートと前記工程チャンバーとの間に提供され、内部に空間が形成されたフレームと、
前記フレームの内部に位置し、前記カセットと前記工程チャンバーとの間に基板を移送する移送ロボットと、
前記フレームの内部に提供され、基板の位置を整列させるためのアライメントチャンバーと、
前記フレームの内部に提供され、工程が完了された基板を冷却するための冷却チャンバーと、
前記アライメントチャンバー内に位置する支持板と、
前記支持板の上面に固定して配置され、基板を置かれる第１のパッドであって、前記第１のパッドは、基板が置かれる第１の本体と、前記第１の本体から上部に突出され、内側面が基板の曲率半径に相応する曲率半径を有する第１の上端部を有する、第１のパッドと、
前記支持板の上面に固定して配置され、基板が置かれる第２のパッドであって、前記第２のパッドは、基板が置かれる第２の本体と、前記第２の本体から上部に突出され、内側面が基板の曲率半径より大きい曲率半径を有する第２の上端部とを有する、第２のパッドと、
前記支持板の上面に位置し、前記支持板の中心方向に移動して基板を押すための第１のアライメントプッシャーであって、前記第１のアライメントプッシャーは、基板の側部が前記第１の上端部の内側面に密着されるように基板を押す、第１のアライメントプッシャーと、
を含む基板処理設備。 A load port in which a cassette containing substrates is placed;
A process chamber in which a process for the substrate is performed;
A frame provided between the load port and the process chamber and having a space formed therein;
A transfer robot that is located inside the frame and transfers a substrate between the cassette and the process chamber;
An alignment chamber provided within the frame for aligning the position of the substrate;
A cooling chamber provided inside the frame for cooling the substrate after the process is completed;
A support plate located in the alignment chamber;
A first pad fixedly disposed on an upper surface of the support plate and on which a substrate is placed, wherein the first pad protrudes upward from the first body on which the substrate is placed and the first body. A first pad having a first upper end with an inner surface having a radius of curvature corresponding to the radius of curvature of the substrate;
A second pad fixedly disposed on the upper surface of the support plate and on which a substrate is placed, wherein the second pad protrudes upward from the second body on which the substrate is placed and the second body. A second pad having a second upper end with an inner surface having a radius of curvature greater than the radius of curvature of the substrate;
A first alignment pusher that is located on the upper surface of the support plate and moves toward the center of the support plate to push the substrate, wherein the first alignment pusher has a side portion of the substrate at the first side. A first alignment pusher that pushes the substrate so that it is in close contact with the inner surface of the upper end;
Including substrate processing equipment. 前記移送ロボット、前記アライメントチャンバー、及び前記冷却チャンバーは、同一のフレーム内に位置する請求項１に記載の基板処理設備。 The substrate processing equipment according to claim 1 , wherein the transfer robot, the alignment chamber, and the cooling chamber are located in the same frame . 前記アライメントチャンバーと前記冷却チャンバーとは、上下方向に積層される請求項１に記載の基板処理設備。 The substrate processing facility according to claim 1 , wherein the alignment chamber and the cooling chamber are stacked in a vertical direction . 前記アライメントチャンバーと前記冷却チャンバーとは、同一の高さで横に並べて提供される請求項１に記載の基板処理設備。 The alignment and the chamber and the cooling chamber, the substrate processing equipment according to claim 1 provided side by side at the same height. 前記ロードポート、前記移送ロボット、及び前記工程チャンバーは、順次的に一列に配置され、
前記アライメントチャンバーと前記冷却チャンバーとは、前記ロードポート、前記移送ロボット、及び前記工程チャンバーが一列に配置された線上から外れて配置される請求項１に記載の基板処理設備。 The load port, the transfer robot, and the process chamber are sequentially arranged in a row,
The substrate processing facility according to claim 1 , wherein the alignment chamber and the cooling chamber are arranged off the line where the load port, the transfer robot, and the process chamber are arranged in a line. 前記冷却チャンバーの内側に位置し、内部に冷却流路が形成されている冷却板と、
前記冷却板に形成されたピンホールにしたがって上下方向に移動する複数のリフトピンと、
前記冷却板に置かれる基板の側部を前記冷却板の中心方向に押して基板位置を整列する第２のアライメントプッシャーと、
をさらに含む請求項１に記載の基板処理設備。 Located inside the cooling chamber, a cooling plate cooling channel formed therein,
A plurality of lift pins that move in the vertical direction according to pinholes formed in the cooling plate;
A second alignment pusher for aligning the substrate position by pushing the side of the substrate placed on the cooling plate toward the center of the cooling plate;
The substrate processing facility according to claim 1 , further comprising: 前記第２のアライメントプッシャーは、
前記冷却板の周辺にしたがって互いに離隔して配置される第１のプッシャー乃至第３のプッシャーと、
前記第１のプッシャーと前記第２のプッシャーとが前記冷却板の中心方向に基板の一側部を１次に押し、前記第３のプッシャーが前記冷却板の中心方向に基板の他側部を２次に押すように前記第１のプッシャー乃至前記第３のプッシャーを駆動させる駆動部と、
を含む請求項６に記載の基板処理設備。 The second alignment pusher is
A first pusher to a third pusher which are spaced apart from each other according to the periphery of the cooling plate;
The first pusher and the second pusher first push one side of the substrate in the central direction of the cooling plate, and the third pusher pushes the other side of the substrate in the central direction of the cooling plate. A driving unit for driving the first to third pushers to press the second time;
The substrate processing facility according to claim 6 . カセットに収納された基板を引き出す基板の引出し段階と、
工程チャンバーの内部へ基板を提供する工程処理前段階と、
工程処理が完了された基板を前記カセットに収納させる基板収納段階と、
前記基板の引出し段階、前記工程処理前段階、及び前記基板収納段階において、基板を同一の移送ロボットによって移送する段階と、
前記工程チャンバーの内部に基板が提供される前に、内部に支持板が位置するアライメントチャンバー内に基板を提供して基板位置を整列するアライメント段階と、
前記工程チャンバーから引き出された基板を冷却チャンバーの内部へ提供して、工程処理が完了された基板を冷却する冷却段階と、
前記支持板の上面に固定して配置された第１のパッドに基板を置く段階であって、前記第１のパッドは、基板が置かれる第１の本体と、前記第１の本体から上部に突出され、内側面が基板の曲率半径に相応する曲率半径を有する第１の上端部を有する、段階と、
前記支持板の上面に固定して配置された第２のパッドに基板を置く段階であって、前記第２のパッドは、基板が置かれる第２の本体と、前記第２の本体から上部に突出され、内側面が基板の曲率半径より大きい曲率半径を有する第２の上端部とを有する、段階と、
前記支持板の上面に位置するアライメントプッシャーにより、前記支持板の中心方向に移動して基板を押す段階であって、前記アライメントプッシャーは、基板の側部が前記第１の上端部の内側面に密着されるように基板を押す、段階と、
を含む、基板処理方法。 A step of drawing out the substrate to pull out the substrate stored in the cassette;
A pre-process stage of providing a substrate to the interior of the process chamber;
A substrate storage stage for storing the substrate for which the process has been completed in the cassette ;
Transferring the substrate by the same transfer robot in the step of drawing out the substrate, the step before the process, and the step of storing the substrate ;
An alignment step of aligning the substrate position by providing the substrate in an alignment chamber in which a support plate is located before the substrate is provided in the process chamber;
A cooling step of providing a substrate drawn out of the process chamber to the inside of the cooling chamber to cool the substrate that has been processed;
Placing a substrate on a first pad fixedly disposed on an upper surface of the support plate, wherein the first pad includes a first body on which the substrate is placed and an upper portion from the first body. Projecting and having an inner surface having a first upper end having a radius of curvature corresponding to the radius of curvature of the substrate;
Placing the substrate on a second pad fixedly disposed on an upper surface of the support plate, wherein the second pad includes a second body on which the substrate is placed, and an upper portion from the second body. Having a second upper end protruding and having an inner surface with a radius of curvature greater than the radius of curvature of the substrate;
The alignment pusher moves to the center of the support plate and pushes the substrate by an alignment pusher located on the upper surface of the support plate, and the alignment pusher has a side portion of the substrate on the inner surface of the first upper end portion. Pressing the substrate so that it is in close contact with the stage,
A substrate processing method. 前記アライメントチャンバーと前記工程チャンバーとの間の基板移送は、前記移送ロボットによって行われる請求項８に記載の基板処理方法。 The substrate processing method according to claim 8 , wherein substrate transfer between the alignment chamber and the process chamber is performed by the transfer robot. 前記アライメント段階では、
第２のアライメントプッシャーが前記支持板の中心方向に移動して第１のパッドの上端部の内側面と前記基板の側部が当たるように前記基板を押す請求項９に記載の基板処理方法。 In the alignment stage,
The substrate processing method according to claim 9 , wherein the second alignment pusher moves toward the center of the support plate and pushes the substrate so that the inner surface of the upper end portion of the first pad and the side portion of the substrate come into contact with each other. 前記第１のパッドの上端部の内側面は、前記基板の曲率半径に相応する曲率半径を有する請求項１０に記載の基板処理方法。 The substrate processing method according to claim 10 , wherein an inner side surface of an upper end portion of the first pad has a curvature radius corresponding to a curvature radius of the substrate. 前記工程チャンバーと前記冷却チャンバーとの間に基板移送は、前記移送ロボットによって行われる請求項９に記載の基板処理方法。 The substrate processing method according to claim 9 , wherein the substrate is transferred between the process chamber and the cooling chamber by the transfer robot. 前記冷却段階では、
冷却板の上面に基板が置かれ、
前記冷却板の周辺にしたがって離隔して配置された第１のプッシャーと第２のプッシャーとが前記冷却板の中心方向に移動して基板の一側部を１次に押し、第３のプッシャーが前記冷却板の中心方向に移動して基板の他側部を２次に押して基板の位置を整列する請求項１２に記載の基板処理方法。 In the cooling step,
A substrate is placed on top of the cooling plate,
The first pusher and the second pusher, which are arranged apart from each other according to the periphery of the cooling plate, move toward the center of the cooling plate to push one side of the substrate first, and the third pusher The substrate processing method according to claim 12 , wherein the substrate position is aligned by moving in the center direction of the cooling plate and secondly pressing the other side of the substrate.
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