KR100566697B1 - Multi-chamber system for fabricating semiconductor devices and method of fabricating semiconductor devices using thereof - Google Patents

Abstract

Disclosed are a multi-chamber system for manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using the same. A cassette loaded with a plurality of substrates is mounted on the cassette stage. The substrate is loaded from the cassette into the load lock chamber via a transfer passage providing space for transferring the substrate while maintaining atmospheric pressure between the cassette and the load lock chamber. The substrate is loaded from the load lock chamber into the process chamber. The process chamber is aligned along the transfer path. By maintaining the inside of the transfer passage at atmospheric pressure and the transfer trajectory of the substrate forming a straight line, it is possible to minimize the volume of the multi-chamber system and improve the transfer speed.

Description

MULTI-CHAMBER SYSTEM FOR FABRICATING SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING SEMICONDUCTOR DEVICES USING THEREOF}

1 is a view schematically showing a structure of a conventional multi-chamber system for manufacturing a semiconductor device.

2 is a view showing a schematic configuration of a multi-chamber system for performing a semiconductor manufacturing process according to a first embodiment of the present invention.

3 is a diagram illustrating a schematic configuration of a multi-chamber system for performing a semiconductor manufacturing process according to a second embodiment of the present invention.

4 is a flowchart illustrating a manufacturing process of a semiconductor device using a multi-chamber system according to an embodiment of the present invention.

5 is a flowchart illustrating a manufacturing process of a semiconductor device using a multi-chamber system according to another embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

100: cassette stage 200: transfer passage

300: load lock chamber 400: process chamber

210: first transfer device 310: second transfer device

The present invention relates to a multi-chamber system for manufacturing a semiconductor device and a method for manufacturing a semiconductor device, and more particularly, to minimize the volume of a multi-chamber system capable of processing a large diameter substrate by arranging a process chamber in parallel with a transfer path. The present invention relates to a multi-chamber system for manufacturing a semiconductor device capable of improving a transfer speed, and a method for manufacturing a semiconductor device using the same.

In general, a semiconductor device manufacturing process employs a multi-chamber system in which various kinds of wafer processing operations can be simultaneously performed in multiple chambers in order to increase the efficiency of the process and the utilization of space. For example, a dry etching process using plasma includes a plurality of process chambers that require a high vacuum environment for generating plasma, and loads and unloads wafers into the plurality of vacuum chambers in a central chamber in a low vacuum state. It is performed using a centralized multichamber system with an in-chamber transfer device.

1 is a view schematically showing a structure of a conventional multi-chamber system for manufacturing a semiconductor device.

Referring to FIG. 1, a conventional multi-chamber system 10 for manufacturing a semiconductor device includes a cassette stage 12 for mounting a cassette 11 on which a plurality of substrates are stacked, and a process chamber 15 for transferring the substrate from the cassette 11. A load lock chamber 13, a substrate transfer device 14, which is a standby place for transferring to the substrate, serves as a transfer passage for transferring a substrate from the load lock chamber 13 to the process chamber 15. And a central chamber 16.

The central chamber 16 is formed in a hexagonal shape, and four process chambers 15 are provided on four sides of each of the four central chambers 16, and an input side rod on which the substrate to be processed is mounted on the remaining two sides. The lock chamber and the output side load lock chamber in which the substrate is loaded after processing are installed.

A method of manufacturing a semiconductor device using a conventional multi-chamber system proceeds as follows.

First, a cassette carrying a substrate to be processed is mounted on the cassette stage. Subsequently, an automatic transfer device or the like installed in the load lock chamber 13 loads the substrate seated on the cassette 11 into the load lock chamber 13. Subsequently, the load lock chamber 13 is sealed and the inside of the load lock chamber 13 is formed at a predetermined level of vacuum. When sufficient vacuum is reached, the gate of the load lock chamber 13 is opened and seated in the substrate transfer device 14 of the central chamber 16. The substrate transfer device 14 horizontally rotates the substrate at a specific angle to transfer the substrate to a specific process chamber. When the substrate is transferred into the process chamber 15, the gate of the process chamber 15 is sealed and the process is performed in a high vacuum state. After completion of the processing, the substrate is transferred by the substrate transfer device 14 and unloaded into the output side load lock chamber. In this case, the substrate transfer device 14 may continuously load and unload the substrate into another process chamber 15 even during a specific process. Thus, it is possible to process multiple substrates simultaneously in multiple process chambers.

However, the semiconductor manufacturing method using the conventional multi-chamber as described above has a problem in that the volume of the multi-chamber itself increases when the size of the substrate increases. That is, in order to process a large diameter substrate, the size of the central chamber must be increased, thereby increasing the volume of the multi-chamber itself. Accordingly, the time required for the high vacuum and low vacuum conversion of the large-capacity central chamber is also increased. In addition, since the central chamber has a polygonal shape such as a hexagonal shape, there is a problem in that the transfer path from the load lock chamber to the process chamber has an elliptical trajectory, thereby increasing the transfer speed of the wafer.

An object of the present invention for solving the above problems is a method of manufacturing a semiconductor device using a multi-chamber to improve the transfer speed and shorten the process time of the substrate by placing a plurality of process chambers connected in parallel along the transfer passage To provide.

Still another object of the present invention is to provide a multi-chamber system for manufacturing a semiconductor device in which a plurality of process chambers are arranged to be connected in parallel along a transfer path.

According to the semiconductor manufacturing method according to an embodiment of the present invention, first, a cassette on which a plurality of substrates are stacked is mounted on the cassette stage. Subsequently, the first substrate is loaded from the cassette into the load lock chamber via a transfer passage providing a space for transferring the first substrate while maintaining atmospheric pressure between the cassette and the load lock chamber. The first substrate is loaded from the load lock chamber into a first process chamber aligned along the transfer passage.

Optionally, a second substrate is loaded from the cassette into the load lock chamber via a transfer passage providing a space for transferring the second substrate while maintaining atmospheric pressure between the cassette and the load lock chamber, and the load lock The second substrate is loaded from the chamber into a second process chamber aligned along the transfer passage. In this case, the load lock chamber is connected to one side of the first process chamber.

Optionally, the second substrate is loaded from the cassette into an area parallel to the first substrate via a transfer passage providing a space for transferring the second substrate while maintaining atmospheric pressure between the cassette and the load lock chamber. . In this case, the first substrate and the second substrate are aligned in parallel with the transfer passage.

The multi-chamber system for manufacturing a semiconductor device according to an embodiment of the present invention includes a cassette stage for mounting a cassette on which a substrate is loaded, a rectangular transfer passage maintaining an atmospheric pressure state and interviewing the cassette stage to provide a space for transferring the substrate. A load lock chamber interviewed with the transfer path and arranged side by side along the side of the transfer path, the process chamber having a plurality of substrate supports, the process chamber having a plurality of substrate supports and being arranged in parallel with the load lock chamber It includes a substrate transfer device for. In one embodiment, the load lock chamber is located in a plurality of opposite sides of the transfer passage, the rectangular transfer passage and the cassette stage may be located perpendicular to each other. In another embodiment, the first surface of the load lock chamber is positioned in parallel with the transfer path and in interview with the first side of the transfer passage, and the cassette stage is the second side of the transfer passage facing the first side portion. You can be interviewed.

Therefore, by placing the process chamber side by side with the transfer passage, it is possible to minimize the volume increase of the multi-chamber system for processing large diameter substrates, and the transfer from the load lock chamber to the process chamber is transferred along a straight path so that the substrate transfer speed Can be increased.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a view showing a schematic configuration of a multi-chamber system for performing a semiconductor manufacturing process according to a first embodiment of the present invention.

Referring to FIG. 2, a multi-chamber system 500 for a semiconductor manufacturing process includes a cassette stage 100 for mounting a cassette on which a substrate to be processed is loaded, and a space required for transferring the substrate adjacent to the cassette stage 100. It includes a transfer passage 200 having a, a load lock chamber 300 in contact with the transfer path 200, a process chamber 400 in contact with the load lock chamber 300 and a transfer device for transferring the substrate do.

The cassette stage 100 is equipped with a plurality of cassettes 110 for loading a plurality of substrates. The transfer passage 200 is formed in a rectangular shape and maintains an atmospheric pressure state. The first transfer device 210 located in the transfer passage 200 extracts a substrate to be processed from one cassette 110 and transfers the substrate to the load lock chamber 300 via the transfer passage 200. Therefore, the substrate is extracted by the first transfer device 210 only when the cassette 110 moves and coincides with the transfer path 200. In one embodiment, the first transfer device 210 is formed of a robot arm capable of horizontal and vertical movement.

The load lock chamber 300 includes a first gate 320 opened toward the transfer passage 200, an opening toward the process chamber, and second and third gates 330 and 340 facing each other. . Therefore, the load lock chamber 300 is simultaneously connected with two different process chambers 300 which are located in parallel along the longitudinal direction of the rectangular transfer passage 200. In one embodiment, the load lock chamber 300 is positioned to face each other with the transfer passage 200 therebetween. Therefore, a plurality of load lock chambers are formed to face each other in parallel with the transfer passage 200. When the first gate 320 is opened and the substrate is seated on the second transfer device 310, the first gate 320 is sealed and a vacuum is formed inside the load lock chamber 300. When a sufficient vacuum is reached, the second gate 330 or the third gate 340 may be opened to be transferred into the adjacent process chamber 400 to start processing the substrate.

A plurality of substrate supports 410 are disposed in the process chamber 400, and in each process chamber, etching, chemical vapor deposition, and rapid heat treatment are performed. In particular, in the case of chemical vapor deposition equipment, if necessary, a substrate support separator such as an air curtain may be installed between the substrate supports, and process conditions such as temperature or type of gas may be changed. Therefore, according to the present exemplary embodiment, four different processes may be performed using one load lock chamber, thereby increasing process efficiency. That is, the same process having different process conditions may be performed in the same process chamber, and different processes may be performed in different process chambers.

Therefore, by forming the transfer path in a straight line and forming the internal pressure at atmospheric pressure, it is possible to improve the transfer speed of the substrate, and to minimize the volume increase of the multi-chamber itself even if the size of the substrate increases from 200 mm to 300 mm substrate. Can be. Accordingly, there is an advantage that can shorten the process time.

3 is a diagram illustrating a schematic configuration of a multi-chamber system for performing a semiconductor manufacturing process according to a second embodiment of the present invention.

Referring to FIG. 3, a multi-chamber system 1000 for a semiconductor manufacturing process includes a cassette stage 600 for mounting a cassette on which a substrate to be processed is loaded, and a space required for transferring the substrate adjacent to the cassette stage 600. And a transfer path 700 having a transfer path, a load lock chamber 800 connected to the transfer path 700, a process chamber 900 connected to the load lock chamber 800, and a transfer device for transferring the substrate.

Since the cassette stage 600 has the same structure and function as the multi-chamber system according to the first embodiment of the present invention, description thereof will be omitted.

The transfer path 700 is formed in a rectangular shape, the inside of which is maintained at atmospheric pressure. The first transfer device 710 positioned in the transfer path 700 extracts a substrate to be processed from one cassette 610 and transfers the substrate to the load lock chamber 800 via the transfer path 700. At this time, it is adjacent to the cassette stage 600 side by side along the longitudinal direction of the transfer passage (700). Therefore, unlike the first embodiment, the first transfer device 710 may extract the substrate by selecting the cassette 610 as necessary. In one embodiment, the first transfer device 710 is formed of a robot arm capable of horizontal and vertical movement.

The load lock chamber 800 is located side by side along one side of the rectangular transfer passageway 700. Therefore, the load lock chamber 800 and the cassette stage 600 are positioned to face each other with the transfer passage 700 therebetween. Sidewalls of the load lock chamber 800 corresponding to the side surfaces connected to the transfer path 700 are connected to the process chamber 900. Thus, the load lock chamber 800 is located between the transfer path 700 and the process chamber 900, the load lock chamber 800 and the process chamber 900 correspond one to one. The load lock chamber 800 includes a plurality of first gates 820 opened toward the transfer path 700 and a plurality of second gates 830 opened toward the process chamber. When the first gate 820 is opened and the substrate is seated on the second transfer device 810, the first gate 820 is sealed and a vacuum is formed inside the load lock chamber 800. Once a sufficient vacuum phase is reached, the second gate 830 is optionally opened to be transferred into an adjacent process chamber 900 to begin processing the substrate.

A plurality of substrate supports 910 are positioned inside the process chamber 900, and etching, chemical vapor deposition, and rapid heat treatment are performed in each process chamber. In particular, in the case of chemical vapor deposition equipment, if necessary, an air curtain may be installed between the substrate supports 910 and process conditions such as temperature or type of gas may be changed. Therefore, according to this embodiment, the same process having different process conditions can be performed using one load lock chamber. In this case, the substrate support 910 and the first and second gates 820 and 830 are formed to correspond one to one. That is, when the substrate is transferred through any one of the first gates 820 by the first transfer device 710, the substrate is transferred through the second gate 830 located opposite to the specified first gate 820. The substrate is mounted on the substrate support 910 which is transferred to the process chamber 900 and positioned in line with the second gate. Therefore, there is an advantage that the transfer time can be shortened by transferring along the straight path from the transfer path 700 to the process chamber 900. The inside of the process chamber 900 maintains a high vacuum state and processing of the substrate is started.

Therefore, by forming the transfer passage of the substrate in a straight line and by forming the pressure inside the transfer passage to atmospheric pressure, it is possible to improve the transfer speed of the substrate, and to increase the volume of the multi-chamber itself even if the size of the substrate is increased.

4 is a flowchart illustrating a manufacturing process of a semiconductor device using a multi-chamber system according to an embodiment of the present invention.

4, in order to manufacture a semiconductor device using a multi-chamber system according to an embodiment of the present invention, a cassette on which a plurality of substrates are stacked is mounted on the cassette stage (step S10). Subsequently, the first substrate is loaded from the cassette into the load lock chamber via a transfer passage where atmospheric pressure is maintained (step S20). The transfer passage is maintained in a rectangular shape and forms the inside of the load lock chamber in a vacuum state. The load lock chamber is located on a first side of the transfer passage, and the cassette is located on a second side opposite to the first side. At this time, the load lock chamber is located in plural in parallel with the transfer passage, the transfer apparatus located in the transfer passage selectively removes the substrate from the cassette. It is also apparent that the cassette can be located on a third side perpendicular to the first side. In this case, the load lock chamber may be located in a plurality of parallel to the transfer passage facing each other with the transfer passage therebetween.

The first substrate is loaded from the load lock chamber into a first process chamber aligned along the transfer passage (step S30). Since the first process chamber is adjacent to the load lock chamber and positioned in parallel with the transfer path, the trajectory of the substrate transferred from the transfer path to the process chamber forms a straight line. Therefore, the feeding speed can be increased as compared with the case of feeding the elliptic trajectory.

Subsequently, the second substrate is loaded from the cassette into the load lock chamber via the transfer passage providing a space for transferring the second substrate while maintaining atmospheric pressure between the cassette and the load lock chamber (step S40). Thereafter, the second substrate is loaded from the load lock chamber into a second process chamber aligned along the transfer passage (step S50). In this case, the load lock chamber is connected to one side of the first process chamber. Accordingly, when the first process chamber and the second process chamber are located on the same plane, the load lock chamber is formed between the first and second process chambers, and the second process chamber is formed in the second process chamber. The first and second process chambers form a multi-layer structure, if located on a vertical surface with the first process chamber. In this case, the first and second process chambers are located in parallel with the transfer passage. Therefore, since both the load lock chamber and the first and second process chambers are positioned in parallel with the transfer passage, it is possible to prevent the substrate from drawing an elliptic trajectory when the substrate is moved. Therefore, it is possible to increase the feed rate and shorten the process time.

5 is a flowchart illustrating a manufacturing process of a semiconductor device using a multi-chamber system according to another embodiment of the present invention.

Referring to Fig. 5, in order to manufacture a semiconductor device using a multi-chamber system, a cassette on which a plurality of substrates are stacked is mounted on the cassette stage (step S11). Subsequently, the first substrate is loaded from the cassette into the load lock chamber via a transfer passage where atmospheric pressure is maintained (step S21). The transfer passage is maintained in a rectangular shape, and the inside of the load lock chamber is formed in a vacuum state. The load lock chamber is located on a first side of the transfer passage, and the cassette is located on a second side opposite to the first side. At this time, the load lock chamber is located in plural in parallel with the transfer passage, the transfer apparatus located in the transfer passage selectively removes the substrate from the cassette. It is also apparent that the cassette can be located on a third side perpendicular to the first side. In this case, the load lock chamber may be located in a plurality of parallel to the transfer passage facing each other with the transfer passage therebetween.

The first substrate is loaded from the load lock chamber into a process chamber aligned along the transfer passage (step S31). Since the process chamber is adjacent to the load lock chamber and positioned in parallel with the transfer passage, the trajectory of the substrate transferred from the transfer passage to the process chamber forms a straight line. Therefore, the feeding speed can be increased as compared with the case of feeding the elliptic trajectory. The interior of the process chamber is maintained in a vacuum, where a plurality of substrate supports are located.

Subsequently, the second substrate is loaded from the cassette into the load lock chamber via the transfer passage providing a space for transferring the second substrate while maintaining atmospheric pressure between the cassette and the load lock chamber (step S41). Thereafter, the second substrate is loaded from the load lock chamber into an area parallel to the first substrate (S51). Therefore, after transferring a plurality of substrates into the same process chamber, it can be processed by varying the process conditions. In this case, the first substrate and the second substrate are aligned in parallel with the transfer passage.

Therefore, the substrate transport speed can be increased by forming a linear path from the cassette on which the substrate is loaded to the process chamber in which the substrate is processed, and the process time can be shortened.

According to the present invention as described above, by placing the process chamber and the load lock chamber in parallel with respect to the transfer path can be changed from the elliptical trajectory to the linear trajectory of the substrate. Accordingly, there is an advantage that can increase the transfer speed of the substrate and shorten the process time. In addition, even if the size of the substrate increases, there is an advantage that can minimize the volume increase of the multi-chamber system.

Although described above with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

Claims (18)

delete delete delete delete delete delete delete delete delete delete A cassette stage for mounting a cassette on which a substrate is loaded; A rectangular transfer passage maintaining an atmospheric pressure and interviewing the cassette stage to provide a space for transferring the substrate; A load lock chamber interviewing the transfer passage and arranged side by side along the side of the transfer passage; A process chamber in contact with the load lock chamber and arranged in parallel with the transfer passage, the process chamber including a plurality of substrate supports; An air curtain that uses air to temporarily distinguish the plurality of substrate supports; And Multi-chamber system for manufacturing a semiconductor device comprising a substrate transfer device for transferring the substrate. 12. The multi-chamber system of claim 11, wherein the load lock chamber is located in plural numbers on opposite sides of the transfer passage, and the rectangular transfer passage and the cassette stage are positioned perpendicular to each other. 13. The multi-chamber system of claim 12, wherein the process chamber is connected to a plurality of process chambers in one load lock chamber by interviewing opposite sides of the load lock chamber. The multi-chamber system of claim 13, wherein the plurality of process chambers are formed in multiple layers. 12. The method of claim 11, wherein the first surface of the load lock chamber is in parallel with the transfer path and in contact with the first side of the transfer passage, the cassette stage is the second side of the transfer passage facing the first side A multi-chamber system for manufacturing a semiconductor device, characterized in that the side portion is interviewed. The semiconductor device of claim 15, wherein the process chamber is positioned to be in contact with a second surface of the load lock chamber facing the first surface, and the process chamber and the transfer passage are located in parallel with each other. Multi-chamber system for manufacturing. delete delete

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