KR101101749B1 - Apparatus and method for manufacturing thin film type solar cell - Google Patents

Abstract

The present invention provides an apparatus for manufacturing a thin-film solar cell that can improve the productivity by preventing the film damage of the flexible substrate and enabling the continuous process by hermetically sealing the process chamber in a non-contact method using an air curtain; A manufacturing method of a thin film solar cell includes a process chamber unit for forming a semiconductor layer on a flexible substrate using a plasma process, the process chamber unit comprising: a lower chamber; An upper chamber disposed to face the lower chamber with the flexible substrate therebetween to form a reaction space; And an airtight unit configured to maintain the airtightness of the reaction space by using an air curtain positioned at a substrate entrance provided between the lower chamber and the upper chamber so that the flexible substrate is conveyed.

Flexible Substrates, Thin Film Solar Cells, Airtight, Lifting, Chambers, Air Curtains

Description

Manufacturing apparatus and manufacturing method of thin film solar cell {APPARATUS AND METHOD FOR MANUFACTURING THIN FILM TYPE SOLAR CELL}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell, and more particularly, to maintain film-tightness inside a process chamber by a non-contact method using an air curtain to prevent film damage of a flexible substrate and to perform a continuous process. The present invention relates to a manufacturing apparatus and a manufacturing method of a thin-film solar cell capable of improving productivity.

The solar cell is a clean energy source that produces energy by converting light energy transmitted from the sun to the earth into electrical energy, which has the advantage of reducing carbon dioxide generation for preventing global warming.

Such a solar cell can be classified into a substrate type solar cell and a thin film solar cell.

The substrate type solar cell is a solar cell manufactured using a semiconductor material such as silicon as a substrate, and the thin film type solar cell is a solar cell manufactured by forming a semiconductor in the form of a thin film on a substrate such as glass.

Although the substrate type solar cell has a somewhat superior efficiency than the thin film type solar cell, there is a limitation in minimizing the thickness in the process and the manufacturing cost is increased due to the use of an expensive semiconductor substrate.

Although thin film type solar cells are somewhat inferior in efficiency to substrate type solar cells, they can be manufactured in a thin thickness and inexpensive materials can be used to reduce manufacturing costs.

In general, a thin film solar cell uses a glass substrate, but research and development of thin film solar cells using a flexible substrate that can increase the weight, constructability, and mass productivity are being actively conducted.

A conventional thin film solar cell using a flexible substrate includes a plurality of solar cells composed of a first electrode layer, a semiconductor layer, and a second electrode layer on a flexible substrate, and adjacent solar cell cells are electrically connected in series with each other.

1 is a view for explaining an apparatus for manufacturing a thin film solar cell using a conventional flexible substrate.

Referring to FIG. 1, the apparatus for manufacturing a thin film solar cell using a conventional flexible substrate includes a common chamber 10, a substrate feeding roller 20, first to third process chamber units 30, 40, and 50. The substrate recovery roller 60 is provided.

The common chamber 10 is installed to surround the first to third process chamber units 30, 40, and 50, the substrate feeding roller 20, and the substrate recovery roller 60. The inside of the common chamber 10 is maintained in a vacuum state by the plurality of first vacuum pumping devices 12 and 14.

The substrate feeding roller 20 is installed at one side of the common chamber 10. At this time, the flexible substrate FS having a predetermined length is wound around the substrate feeding roller 20. Here, the first electrode layer (not shown) of the thin film solar cell is formed at predetermined intervals on the flexible substrate FS.

The substrate feeding roller 20 supplies the flexible substrate FS to the first to third process chamber units 30, 40, and 50 while rotating in a stepping rolling manner. At this time, between the substrate feeding roller 20 and the first process chamber unit 30, a material for guiding the conveyance of the flexible substrate FS supplied from the substrate feeding roller 20 to the first process chamber unit 30. 1 The guide roller 16 is installed.

Each of the first to third process chamber units 30, 40, and 50 is installed inside the common chamber 10 to be disposed between the substrate feeding roller 20 and the substrate recovery roller 60. Each of the first to third process chamber units 30, 40, and 50 may be supplied from the substrate feeding roller 20 according to a stepping rolling method using a plasma enhanced chemical vapor deposition (PECVD). A semiconductor layer is formed on it. In this case, the semiconductor layer includes a P-type semiconductor layer, an I-type semiconductor layer, and an N-type semiconductor layer sequentially formed on the flexible substrate FS. Accordingly, the first process chamber unit 30 forms a P-type semiconductor layer on the flexible substrate FS, and the second process chamber unit 40 forms an I-type semiconductor layer on the P-type semiconductor layer. The third process chamber unit 50 forms an N-type semiconductor layer on the I-type semiconductor layer.

To this end, each of the first to third process chamber units 30, 40, and 50 has a lower chamber 31, a heater 32, an upper chamber 33, a shower head 34, and an upper chamber lift 35. And a second vacuum pumping device 36.

The lower chamber 31 is installed on the bottom surface of the common chamber 10.

The heater 32 is installed in the lower chamber 31 and heats the flexible substrate FS conveyed by the stepping method to a predetermined temperature.

The upper chamber 33 is installed on the upper part of the common chamber 10 so as to be supported by the upper chamber lifting part 35. The upper chamber 33 is elevated by the upper chamber lifting unit 35 to contact the lower chamber 31 with the flexible substrate FS therebetween to form a reaction space. At this time, a sealing member (not shown) is installed between the lower chamber 31 and the upper chamber 33 in contact to seal the reaction space.

The shower head 34 is installed inside the upper chamber 33 to inject a process gas supplied from the outside into the reaction space.

The upper chamber lifting unit 35 is installed between the common chamber 10 and the upper chamber 33 to lift the upper chamber 33.

The second vacuum pumping device 36 is installed to communicate with the lower chamber 31 through the bottom surface of the common chamber 10 to form a vacuum atmosphere in the reaction space.

The substrate recovery roller 60 is installed at the other side of the common chamber 10. The substrate recovery roller 60 is connected to the substrate feeding roller 20 which rotates in a stepping rolling manner, and the flexible substrate FS is completed by the first to third process chamber units 30, 40, and 50. Recover. At this time, between the third process chamber unit 50 and the substrate recovery roller 60, a second for guiding the flexible substrate FS conveyed from the third process chamber unit 50 to the substrate recovery roller 60. The guide roller 18 is installed.

2A to 2C are views for explaining a method of driving a conventional thin film solar cell manufacturing apparatus.

Referring to FIGS. 2A to 2C, a driving method of a conventional apparatus for manufacturing a thin film solar cell is as follows.

First, as shown in FIG. 2A, after driving the upper chamber lifter 35 of each of the first to third process chamber units 30, 40, and 50, the upper chamber 33 is raised to a predetermined height. The substrate feeding roller 20 and the substrate recovery roller 60 are simultaneously driven to step the flexible substrate FS by a predetermined length in a stepping rolling manner to pass through each of the first to third process chamber units 30, 40, and 50. Return.

Subsequently, as shown in FIG. 2B, the upper chamber lifter 35 of each of the first to third process chamber units 30, 40, and 50 is driven to lower the upper chamber 33 to a predetermined height to lower the lower chamber. Contact with (31). Accordingly, the lower chamber 31 is in contact with the upper chamber 33 to form a reaction space.

Subsequently, the second vacuum pumping device 36 is driven to form a vacuum atmosphere in the reaction space provided by the lower chamber 31 and the upper chamber 33.

Subsequently, as shown in FIG. 2C, a process gas corresponding to each process of the first to third process chamber units 30, 40, and 50 is supplied to the shower head 34, and the shower head 34 is provided. The process gas injected into the reaction space is converted into plasma to form a semiconductor layer on the flexible substrate FS.

Subsequently, when the semiconductor layer is formed on the flexible substrate FS, the upper chamber 33 is raised to a predetermined height, and then the process illustrated in FIGS. 2A to 2C is repeatedly performed to the flexible substrate FS. The semiconductor layer is formed.

However, the above-described conventional thin film solar cell manufacturing apparatus has the following problems.

First, when the semiconductor layer is formed on the flexible substrate FS on which the first electrode layer is formed, the upper chamber may be used to separate the process chamber units 30, 40, and 50, prevent inflow of process gas, and pressure control. Since the reaction space is sealed according to the lifting and lowering of 33, the upper chamber 33 is in contact with the flexible substrate FS, thereby damaging the film quality of the first electrode layer formed on the flexible substrate FS.

Second, after stopping the transfer of the flexible substrate FS, the upper chamber 33 is brought into contact with the flexible substrate FS for sealing the process chamber units 30, 40, 50, thereby increasing the process time. There is a problem that the productivity is lowered.

The present invention is to solve the above problems, by maintaining the airtight inside the process chamber in a non-contact method using an air curtain to prevent the film damage of the flexible substrate and to enable a continuous process to improve productivity It is a technical problem to provide a manufacturing apparatus and a manufacturing method of a thin film solar cell which can be improved.

An apparatus for manufacturing a thin film solar cell according to the present invention for achieving the above technical problem includes a process chamber unit for forming a semiconductor layer on a flexible substrate using a plasma process, the process chamber unit comprises a lower chamber; An upper chamber disposed to face the lower chamber with the flexible substrate therebetween to form a reaction space; And an airtight unit installed in the lower chamber and the upper chamber to airtight the reaction space using an air curtain.

The hermetic unit may include: a first air curtain part installed at both side chamber walls of the lower chamber to seal between the chamber wall of the lower chamber and the rear surface of the flexible substrate; And a second air curtain part installed at both side chamber walls of the upper chamber to seal between the chamber wall of the upper chamber and the upper surface of the flexible substrate.

Each of the first and second air curtain portions has a body installed on the chamber wall; A gas injector installed at one side of the body to inject an airtight gas to the flexible substrate; And a gas suction part installed on the other side of the body to suck an airtight gas injected from the gas injection part to hermetically seal the reaction space.

The hermetic gas is characterized in that the nitrogen gas.

The process chamber unit may include a heater installed in the lower chamber; And a shower head installed in the upper chamber to inject a process gas for forming the semiconductor layer into the reaction space formed by the lower chamber and the upper chamber.

An apparatus for manufacturing a thin film solar cell according to the present invention for achieving the above technical problem is a common chamber; A substrate feeding roller installed at one side of the common chamber to convey a flexible substrate; A substrate recovery roller installed at the other side of the common chamber to recover the flexible substrate; And a plurality of process chamber units provided between the substrate feeding roller and the substrate recovery roller to form a semiconductor layer on the flexible substrate conveyed by simultaneous driving of the substrate feeding roller and the substrate recovery roller. Each of the plurality of process chamber units comprises a lower chamber; An upper chamber disposed to face the lower chamber with the flexible substrate therebetween to form a reaction space; And an airtight unit installed in the lower chamber and the upper chamber to airtight the reaction space using an air curtain.

The apparatus for manufacturing a thin film solar cell includes at least one first pumping device for forming a vacuum atmosphere in the common chamber; And a plurality of second pumping devices for forming a vacuum atmosphere in each of the plurality of process chamber units.

The plurality of process chamber units may include a first process chamber unit for forming a first semiconductor layer on a first electrode layer formed on the flexible substrate; A second process chamber unit for forming a second semiconductor layer on the first semiconductor layer formed on the flexible substrate; And a third process chamber unit for forming a third semiconductor layer on the second semiconductor layer formed on the flexible substrate.

An apparatus for manufacturing a thin film solar cell according to the present invention for achieving the above technical problem is to form a semiconductor layer on a flexible substrate that is continuously conveyed by the simultaneous driving of the substrate feeding roller and the substrate recovery roller installed in the outer chamber A common chamber, wherein the common chamber comprises: a lower common chamber; An upper common chamber installed to face the lower common chamber with the conveyed flexible substrate therebetween; An airtight unit for hermetically sealing between the flexible substrate and the lower common chamber using an air curtain and between the flexible substrate and the upper common chamber; A heating roller for heating the flexible substrate to a predetermined temperature while conveying the flexible substrate through an outer circumferential surface; And a plurality of process chamber units installed at predetermined intervals to face the outer circumferential surface of the heating roller and for forming the semiconductor layer on the flexible substrate conveyed along the outer circumferential surface of the heating roller using a plasma process. It is characterized by.

The hermetic unit may include: a first air curtain part installed at both side chamber walls of the lower common chamber to seal between the chamber wall of the lower common chamber and the rear surface of the flexible substrate; And a second air curtain part installed on both side chamber walls of the upper common chamber to seal between the chamber wall of the upper common chamber and the upper surface of the flexible substrate.

Each of the first and second air curtain portions may include a first body installed on the chamber wall; A first gas injector installed on one side of the first body to inject an airtight gas to the flexible substrate; And a first gas suction part installed on the other side of the first body to suck the gas for gas tightly injected from the first gas injection part to hermetically seal the reaction space.

The plurality of process chamber units may include a first process chamber unit for forming a first semiconductor layer on a first electrode layer formed on the flexible substrate; A second process chamber unit for forming a second semiconductor layer on the first semiconductor layer formed on the flexible substrate; And a third process chamber unit for forming a third semiconductor layer on the second semiconductor layer formed on the flexible substrate.

Each of the first to third process chamber units may include: a process chamber installed to face the flexible substrate conveyed along an outer circumferential surface of the heating roller to form a reaction space; A shower head installed in the process chamber to inject a process gas into the reaction space; And a third air curtain portion installed on the chamber wall of the process chamber to airtight the reaction space using an air curtain.

The third air curtain portion includes a second body installed on the chamber wall; A second gas injector installed on one side of the second body to inject an airtight gas to the flexible substrate; And a second gas suction part installed at the other side of the second body to suck the gas for gas leaking from the second gas injection part to hermetically seal the reaction space.

The hermetic gas is characterized in that the nitrogen gas.

The shared chamber may include a first substrate guide roller installed in the shared chamber to guide the flexible substrate conveyed into the shared chamber toward the outer circumferential surface of the heating roller; And a second substrate guide roller installed in the common chamber to guide the flexible substrate conveyed along the outer circumferential surface of the heating roller to the substrate recovery roller.

The thin film solar cell manufacturing apparatus includes at least one first pumping device for forming a vacuum atmosphere inside the outer chamber; A second pumping device for forming a vacuum atmosphere inside the common chamber; And a plurality of third pumping devices for forming a vacuum atmosphere in each of the plurality of process chamber units.

According to an aspect of the present invention, there is provided a method of manufacturing a thin film solar cell, the method comprising: conveying a flexible substrate to pass between a lower chamber and an upper chamber installed to face each other to form a reaction space; Hermetically sealing the reaction space using an air curtain; And forming a semiconductor layer on the flexible substrate using a plasma formed by the process gas supplied to the reaction space.

According to an aspect of the present invention, there is provided a method of manufacturing a thin film solar cell, wherein a plurality of substrates are disposed between the substrate feeding roller and the substrate recovery roller by simultaneously driving a substrate feeding roller and a substrate recovery roller installed in a common chamber. Conveying the flexible substrate via the reaction space provided by the lower chamber and the upper chamber of each process chamber unit; Hermetically sealing the reaction space of each process chamber unit using an air curtain; And forming a semiconductor layer on the flexible substrate using a plasma formed by a process gas supplied to the reaction space of each process chamber unit.

Hermetically sealing the reaction space may inject a gas for airtight to the rear surface of the flexible substrate by using first air curtains installed on both side chamber walls of the lower chamber, and suck the injected gas for gastight gas into the lower chamber. Hermetically sealing between the chamber wall of the substrate and the back side of the flexible substrate; And injecting the airtight gas to an upper surface of the flexible substrate by using second air curtains installed on both side chamber walls of the upper chamber, and sucking the injected gas for gastight gas to allow the chamber walls of the upper chamber and the flexible body to flow. And airtight between the top surfaces of the substrates.

In the forming of the semiconductor layer on the flexible substrate, the semiconductor layer may be formed while the flexible substrate is being conveyed.

The forming of the semiconductor layer on the flexible substrate may include forming a first semiconductor layer on a first electrode layer formed on the flexible substrate in a first process chamber unit of the plurality of process chamber units; Forming a second semiconductor layer on the first semiconductor layer formed on the flexible substrate in a second process chamber unit of the plurality of process chamber units; And forming a third semiconductor layer on the second semiconductor layer formed on the flexible substrate in a third process chamber unit of the plurality of process chamber units.

A method of manufacturing a thin film solar cell according to the present invention for achieving the above technical problem is for forming a semiconductor layer on a flexible substrate that is continuously conveyed by interlocking a substrate feeding roller and a substrate recovery roller installed in an outer chamber. A method of manufacturing a thin film solar cell including a common chamber, the method comprising: driving the substrate feeding roller and the substrate recovery roller simultaneously to convey the flexible substrate to pass between a lower common chamber and an upper common chamber of the common chamber; Stage 1; A second step of sealing an air curtain between the flexible substrate and the lower common chamber and between the flexible substrate and the upper common chamber; A third step of conveying the flexible substrate along an outer circumferential surface of the heating roller according to the rotation of the heating roller installed in the common chamber; And a fourth step of forming the semiconductor layer on the flexible substrate conveyed along the outer circumferential surface of the heating roller by using a plasma process by a plurality of process chamber units disposed at predetermined intervals to face the outer circumferential surface of the heating roller. It is characterized by made by.

The second step is to inject a gas for airtight to the back of the flexible substrate using a first air curtain portion provided on both side chamber walls of the lower common chamber, and to suck the injected airtight gas gas of the lower common chamber Hermetically sealing between a chamber wall and a back side of the flexible substrate; And spraying the airtight gas onto the upper surface of the flexible substrate by using second air curtains provided on both side chamber walls of the upper common chamber, and sucking the injected gas for the airtight gas to form a chamber wall of the upper common chamber. And sealing the upper surface of the flexible substrate.

The fourth step may include airtight between each of the plurality of process chamber units and the flexible substrate using an air curtain to form a reaction space in each of the plurality of process chamber units; And forming the semiconductor layer on the flexible substrate in each process chamber unit.

Forming a reaction space in each of the plurality of process chamber units may inject gas for airtight onto the upper surface of the flexible substrate by using a third air curtain part provided on both side chamber walls of the process chambers of each of the plurality of process chamber units. And inhale the injected gastight gas to hermetically seal between the chamber wall of the process chamber and the upper surface of the flexible substrate.

The forming of the semiconductor layer on the flexible substrate in each of the process chamber units may include forming a first semiconductor layer on a first electrode layer formed on the flexible substrate in a first process chamber unit of the plurality of process chamber units. Making; Forming a second semiconductor layer on the first semiconductor layer formed on the flexible substrate in a second process chamber unit of the plurality of process chamber units; And forming a third semiconductor layer on the second semiconductor layer formed on the flexible substrate in a third process chamber unit of the plurality of process chamber units.

As described above, the manufacturing apparatus and the manufacturing method of the thin-film solar cell according to the present invention have the following effects.

First, by air-tightening the process chamber unit in a non-contact manner, it is possible to prevent the film quality damage of the first electrode layer formed on the flexible substrate, and to perform the plasma process while conveying the flexible substrate, thereby increasing productivity through a continuous process. There is an effect that can be improved.

Second, the air curtain is used to airtight between the flexible substrate and the process chamber continuously conveyed along the circumferential surface of the heating roller in a non-contact manner to prevent damage to the thin film formed on the flexible substrate, and the productivity through the continuous process There is an effect that can be greatly improved.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a view for explaining an apparatus for manufacturing a thin film solar cell according to a first embodiment of the present invention.

Referring to FIG. 3, the apparatus for manufacturing a thin film solar cell according to the first exemplary embodiment may include a common chamber 110, a substrate feeding roller 120, and first to third process chamber units 130, 140, and 150. , The substrate recovery roller 160, and the plurality of substrate guide rollers 170 are configured.

The common chamber 110 is installed to surround the first to third process chamber units 130, 140, and 150, the substrate feeding roller 120, and the substrate recovery roller 160. In this case, the internal pressure of the common chamber 110 is maintained at a predetermined pressure lowered by the plurality of first pumping devices 112 and 114.

The substrate feeding roller 120 is installed at one side of the common chamber 110. At this time, the flexible substrate FS having a predetermined length is wound around the substrate feeding roller 120. Here, the first electrode layer (not shown) of the thin film solar cell is formed at predetermined intervals on the flexible substrate FS. The substrate feeding roller 120 is rotated according to the rotation of the driving device (not shown) and supplies the flexible substrate FS to the first to third process chamber units 130, 140, and 150.

Each of the first to third process chamber units 130, 140, and 150 is installed inside the common chamber 110 to be disposed between the substrate feeding roller 120 and the substrate recovery roller 160. Each of the first to third process chamber units 130, 140, and 150 may be formed on a flexible substrate FS conveyed by the substrate feeding roller 120 using a plasma enhanced chemical vapor deposition (PECVD) process. A semiconductor layer is formed on one electrode layer. In this case, the semiconductor layer includes a P-type semiconductor layer, an I-type semiconductor layer, and an N-type semiconductor layer sequentially formed on the first electrode layer of the flexible substrate FS. Accordingly, the first process chamber unit 130 forms a first semiconductor layer (eg, a P-type semiconductor layer) on the first electrode layer on the flexible substrate FS, and the second process chamber unit 140. Forms a second semiconductor layer (eg, an I-type semiconductor layer) on the first semiconductor layer, and the third process chamber unit 150 is a third semiconductor layer (eg, N on the second semiconductor layer). Type semiconductor layer). Here, according to the structure of the thin film solar cell, the first process chamber unit 130 forms an N-type semiconductor layer on the first electrode layer of the flexible substrate FS, and the second process chamber unit 140 is an N-type semiconductor. An I-type semiconductor layer may be formed on the layer, and the third process chamber unit 150 may form a P-type semiconductor layer on the I-type semiconductor layer.

To this end, each of the first to third process chamber units 130, 140, and 150 may include a lower chamber 131, a heater 132, an upper chamber 133, a shower head 134, and a second pumping device 136. , And the airtight unit 300.

The lower chamber 131 is installed on the bottom surface of the common chamber 110.

The heater 132 is installed in the lower chamber 131 to heat the flexible substrate FS to a predetermined temperature. In this case, the heater 132 may include a heat source such as an infrared lamp. Such a heater 132 preferably heats the flexible substrate FS through a non-contact method with the flexible substrate FS.

The upper chamber 133 is installed above the common chamber 110 so as to face the chamber wall of the lower chamber 131 at a predetermined height. In this case, the upper chamber 133 is supported by the upper chamber support 135 installed on the upper portion of the common chamber 110.

The shower head 134 is installed inside the upper chamber 133 to inject a process gas supplied from the outside into the reaction space to be described later.

The second pumping device 136 is installed to communicate with the lower chamber 131 through the bottom surface of the common chamber 110 to lower the internal pressure of the reaction space to a predetermined pressure.

The airtight unit 300 is installed at a substrate entrance provided between the both side chamber walls of the lower chamber 131 and the chamber both side chamber walls of the upper chamber 133, so that the airtight unit 300 of the upper chamber 133 and the chamber wall of the lower chamber 131 is disposed. Airtight between the chamber walls.

To this end, the airtight unit 300 according to the first exemplary embodiment of the present invention includes the first and second air curtains 310 and 320 as shown in FIG. 4.

The first air curtain 310 includes a first body 312, a first gas injector 314, and a first gas intake 316.

The first body 312 is installed on both chamber walls of the lower chamber 131.

The first gas injector 314 is installed at one edge or the other edge of the first body 312 to inject a gastight gas having a predetermined pressure supplied from the outside toward the first gas inlet 316. Here, the gas tight gas may be nitrogen (N ₂ ) gas.

The first gas inlet 316 is installed on the other edge or one side edge of the first body 312 so as to be opposite to the installation position of the first gas injector 314, and the airtight sprayed from the first gas injector 314. Inhale gas.

Meanwhile, the first body 312 may further include a first curved surface formed between the first gas injector 314 and the first gas inlet 316 to smoothly flow the gas for airtightness.

As illustrated in FIG. 5, the first air curtain 310 described above may prevent first process gas leakage to prevent the process gas supplied to the process chamber units 130, 140, and 150 from flowing out. It further comprises a portion 318.

The first process gas leakage preventing part 318 includes a first rotating part 318a and a first stopper 318b.

The first rotating part 318a is installed to be rotatable on one side of the first body 312 corresponding to the inside of the process chamber unit 130, 140, 150. In this case, the first rotating part 318a may be made of a material that is heat resistant without damaging the film quality of the first electrode layer formed on the flexible substrate FS even if it is in contact with the rear surface of the flexible substrate FS. For example, the first rotating part 318a may be made of Teflon material.

The first stopper 318b is installed on one side of the first body 312 corresponding to the interior of the process chamber units 130, 140, and 150 to constrain the rotation of the first rotating part 318a. That is, the first stopper 318b allows the first rotary part 318a to rotate in the inner direction of the process chamber units 130, 140, and 150, whereas the first rotary part 318a allows the process chamber unit 130, Constrain the rotation of the first rotating part 318a so as not to rotate in the outward directions of the 140 and 150.

In FIG. 4, the second air curtain 320 includes a second body 322, a second gas injector 324, and a second gas intake 326.

The second body 322 is installed on both chamber walls of the upper chamber 133. Here, the second body 322 may be installed to face the first body 312 of the first air curtain 310 or staggered at predetermined intervals.

The second gas injector 324 is installed at one edge or the other edge of the second body 322 to inject the above-described gastight gas of a predetermined pressure supplied from the outside toward the second gas inlet 326. In this case, the second gas injection unit 324 may be installed to face the first gas injection unit 314 of the first air curtain unit 310 or to face the first gas suction unit 316.

The second gas inlet 326 is installed on the other edge or one edge of the second body 322 so as to be opposite to the installation position of the second gas injector 324, and the airtight sprayed from the second gas injector 324. Inhale gas.

Meanwhile, the second body 322 may further include a second curved surface formed between the second gas injector 324 and the second gas inlet 326 to smoothly flow the gas for airtightness.

As described above, the second air curtain unit 320 may prevent the second process gas leaking out to prevent the process gas supplied to the process chamber units 130, 140, and 150 from flowing out. It further comprises a portion 328.

The 2nd process gas outflow prevention part 328 is comprised including the 2nd rotation part 328a and the 2nd stopper 328b.

The second rotating part 328a is installed to be rotatable on one side of the second body 322 corresponding to the inside of the process chamber unit 130, 140, 150. In this case, the second rotating part 328a may be made of the same material as the first rotating part 318a.

The second stopper 328b is installed on one side of the second body 322 corresponding to the inside of the process chamber units 130, 140, and 150 to constrain the rotation of the second rotating part 328a. That is, the second stopper 328b allows the second rotating part 328a to rotate in the inner direction of the process chamber units 130, 140, and 150, while the second rotating part 328a has the process chamber unit 130, The rotation of the second rotating part 328a is constrained so as not to rotate in the outward directions of the 140 and 150.

When the flexible substrate FS is transferred to each of the process chamber units 130, 140, and 150, the airtight unit 300 may pass the gas for airtightness at a predetermined pressure through the gas injection units 314 and 324. Each process chamber unit 130, 140, 150 is hermetically sealed by spraying the back and upper surfaces of the FS and sucking the gas for hermeticity through the gas suction units 316,326. Accordingly, the reaction space of each process chamber unit 130, 140, 150 is kept airtight by the airtight unit 300.

Meanwhile, each process chamber unit 130, 140, 150 is hermetically sealed by the hermetic unit 300 so that the substrate feeding roller 120 can convey the flexible substrate FS in a stepping rolling manner. However, it can be carried out continuously without stopping the transfer of the flexible substrate (FS), preferably to enable a continuous process to improve the productivity.

In FIG. 3, the substrate recovery roller 160 is installed at the other side of the common chamber 110. The substrate recovery roller 160 recovers the flexible substrate FS in which the process is completed by the third process chamber unit 150 in conjunction with the rotation of the substrate feeding roller 120.

The plurality of substrate guide rollers 170 are installed between the substrate feeding rollers 120, the first to third process chamber units 130, 140, and 150, and the substrate recovery roller 160 to form the flexible substrate FS. Guide the return.

As described above, in the apparatus for manufacturing a thin film solar cell according to the first exemplary embodiment of the present invention, the process chamber units 130, 140, and 150 may be contacted in a non-contact manner by using the first and second air curtains 310 and 320. By hermetic sealing, it is possible to prevent film quality damage of the first electrode layer formed on the flexible substrate FS, and to perform the plasma process while conveying the flexible substrate FS, thereby improving productivity through a continuous process.

6A and 6B are views for explaining step-by-step a method of manufacturing a thin film solar cell according to a first embodiment of the present invention.

6A and 6B, the manufacturing method of the thin film solar cell according to the first exemplary embodiment of the present invention will be described step by step.

First, as shown in FIG. 6A, the first and second air curtain portions 310 and 320 of the airtight unit 300 installed in each of the first to third process chamber units 130, 140, and 150 are driven to The airtightness of the reaction space provided in each process chamber unit 130,140,150 is hold | maintained by sealing the back surface and the upper surface of the flexible board | substrate FS conveyed to each process chamber unit 130,140,150. At this time, the flexible substrate FS is conveyed to each process chamber unit 130, 140, 150 by the interlocking of the substrate feeding roller 120 and the substrate recovery roller 160 according to the stepping rolling method, thereby maintaining a stopped state. do.

Subsequently, as illustrated in FIG. 6B, the first to third process chambers are heated while heating the flexible substrate FS to a predetermined temperature using the heaters 132 of the process chamber units 130, 140, and 150. The process gas corresponding to each process of the units 130, 140, and 150 is supplied to the shower head 134, and the process gas injected into the reaction space through the shower head 134 is converted into a plasma to provide a flexible substrate FS. ) To form a semiconductor layer. Accordingly, in the first process chamber unit 130, the first semiconductor layer is formed on the first electrode layer formed on the flexible substrate FS, and in the second process chamber unit 140, the first semiconductor layer is formed on the flexible substrate FS. A second semiconductor layer is formed on the first semiconductor layer, and a third semiconductor layer is formed on the second semiconductor layer formed on the flexible substrate FS in the third process chamber unit 150.

Subsequently, when the semiconductor layer is formed on the flexible substrate FS, the semiconductor layer is formed on the flexible substrate FS by repeatedly performing the processes illustrated in FIGS. 6A and 6B.

Meanwhile, in the method of manufacturing the thin film solar cell according to the first embodiment of the present invention described above, the flexible substrate FS is conveyed by a stepping rolling method to perform a process of forming a semiconductor layer, but the present invention is not limited thereto. The formation process of the semiconductor layer mentioned above can be performed, conveying FS continuously. That is, the present invention maintains the airtightness of the reaction space provided in each of the process chamber units 130, 140, and 150 through the non-contact method using the air curtains 310 and 320, thereby conveying the flexible substrate FS. The above-described process of forming the semiconductor layer can be performed while continuously conveying the flexible substrate FS without stopping.

As described above, in the method of manufacturing the thin film solar cell according to the first embodiment of the present invention, the non-contact between the flexible substrate FS and each of the process chambers 652, 662, and 672 using the air curtains 310 and 320. By hermetically sealing in such a manner, damage to the thin film formed on the flexible substrate FS can be prevented and productivity can be greatly improved through a continuous process.

7 is a view for explaining a manufacturing apparatus of a thin film solar cell according to a second embodiment of the present invention.

Referring to FIG. 7, the apparatus for manufacturing a thin film solar cell according to a second exemplary embodiment of the present invention may include an outer chamber 510, a substrate feeding roller 520, a common chamber 530, and a substrate recovery roller 540. And first and second substrate guide rollers 550 and 560.

The outer chamber 510 is installed to surround the substrate feeding roller 520, the common chamber 530, and the substrate recovery roller 540. The internal pressure of the outer chamber 510 is maintained at a predetermined pressure by the plurality of first pumping devices 512 and 514.

The substrate feeding roller 520 is installed at one side of the outer chamber 510. At this time, the flexible substrate FS having a predetermined length is wound around the substrate feeding roller 520. Here, the first electrode layer (not shown) of the thin film solar cell is formed at predetermined intervals on the flexible substrate FS. The substrate feeding roller 520 is rotated according to the rotation of the driving device (not shown) and supplies the flexible substrate FS to the common chamber 530.

The common chamber 530 is installed between the substrate feeding roller 520 and the substrate recovery roller 540 installed in the outer chamber 510 and is conveyed by the substrate feeding roller 520 and the substrate recovery roller 540. A semiconductor layer is formed on the first electrode layer formed at (FS). Such a detailed description of the common chamber 530 will be described later.

The substrate recovery roller 540 is installed at the other side of the common chamber 510. The substrate recovery roller 540 recovers the flexible substrate FS in which the process is completed by the common chamber 530 in conjunction with the rotation of the substrate feeding roller 520.

The first conveyance guide roller 550 is installed between the substrate feeding roller 520 and the common chamber 530 to guide the conveyance of the flexible substrate FS conveyed from the substrate feeding roller 520 to the common chamber 530. do.

The second conveyance guide roller 560 is provided between the common chamber 530 and the substrate recovery roller 540 to guide the conveyance of the flexible substrate FS conveyed from the common chamber 530 to the substrate recovery roller 540. do.

As described above, the apparatus for manufacturing a thin film solar cell according to the second embodiment of the present invention uses the first and second air curtains 310 and 320 to hermetically seal the common chamber 530 in a non-contact manner, thereby providing a flexible substrate ( Damage to the film of the first electrode layer formed in the FS may be prevented, and the plasma process may be performed while the flexible substrate FS is transferred from the common chamber 530, thereby improving productivity through a continuous process.

Hereinafter, the common chamber 530 will be described in detail.

The common chamber 530 includes the lower common chamber 610, the upper common chamber 620, the airtight unit 630, the heating roller 640, the first and second substrate guide rollers 642 and 644, and the first to the first. And three process chamber units 650, 660, 670, and second to fifth pumping devices 682, 684, 686, 688.

The lower common chamber 610 is installed on the bottom surface of the outer chamber 510.

The upper common chamber 620 is installed above the outer chamber 510 to face the chamber wall of the lower common chamber 610 at a predetermined height. In this case, the upper common chamber 620 may be supported by an upper common chamber supporter (not shown) installed above the outer chamber 510.

The airtight unit 630 is installed between the side chamber walls of the lower common chamber 610 and the side chamber walls of the upper common chamber 620, respectively, so that the chamber walls of the lower common chamber 610 and the chambers of the upper common chamber 620 are provided. Keep it tight between the walls.

For this purpose, the airtight unit 630 is configured to include the first and second air curtains 310 and 320, as shown in FIG. Since the first and second air curtains 310 and 320 are configured in the same manner as the airtight unit 300 according to the first embodiment of the present invention described above, the description thereof will be described with reference to FIG. 4. I will replace it with In this case, the airtight unit 630 may further include the process gas leakage preventing parts 318 and 328 illustrated in FIG. 5.

As such, the airtight unit 630 is conveyed between the chamber wall of the lower common chamber 610 and the chamber wall of the upper common chamber 620 by using the first and second air curtain portions 310 and 320 described above. The inside and the inside of the common chamber 510 are hermetically sealed by hermetically sealing the back and the top surface of the substrate FS in a non-contact manner.

The heating roller 640 conveys the flexible substrate FS that is rotatably installed in the common chamber 530, and simultaneously heats the flexible substrate FS to a predetermined temperature. At this time, the flexible substrate FS is rotated along the circumferential surface of the heating roller 540 and conveyed. Here, the heating roller 640 may include a heat source such as an infrared lamp.

The first substrate guide roller 642 is installed at one side of the common chamber 530 so as to be adjacent to one outer peripheral surface of the heating roller 640 so that the flexible substrate FS is conveyed along the circumferential surface of the heating roller 640. do.

The second substrate guide roller 644 is installed on the other side of the common chamber 530 so as to be adjacent to the outer peripheral surface of the other side of the heating roller 640, and the flexible substrate FS conveyed along the circumferential surface of the heating roller 640 is a substrate. It guides so that it may be conveyed to the collection roller 540.

Each of the first to third process chamber units 650, 660, and 670 is installed at regular intervals on the circumferential surface of the heating roller 640. Each of the first to third process chamber units 650, 660, and 670 forms a semiconductor layer on the first electrode layer formed on the flexible substrate FS conveyed by the heating roller 640 using a PECVD process. do. In this case, the semiconductor layer includes a P-type semiconductor layer, an I-type semiconductor layer, and an N-type semiconductor layer sequentially formed on the first electrode layer of the flexible substrate FS. Accordingly, the first process chamber unit 650 forms a first semiconductor layer (eg, a P-type semiconductor layer) on the first electrode layer on the flexible substrate FS, and the second process chamber unit 660. Forms a second semiconductor layer (eg, an I-type semiconductor layer) on the first semiconductor layer, and the third process chamber unit 670 is a third semiconductor layer (eg, N on the second semiconductor layer). Type semiconductor layer). Here, according to the structure of the thin film solar cell, the first process chamber unit 650 forms an N-type semiconductor layer on the first electrode layer of the flexible substrate FS, and the second process chamber unit 660 is an N-type semiconductor. An I-type semiconductor layer may be formed on the layer, and the third process chamber unit 670 may form a P-type semiconductor layer on the I-type semiconductor layer.

The first process chamber unit 650 is installed in the common chamber 530 to face an outer circumferential surface of one side of the heating roller 640. The first process chamber unit 650 may be configured to form the first semiconductor layer on the first electrode layer of the flexible substrate FS through a plasma process using the first process gas under a predetermined pressure for forming the first semiconductor layer. Form.

To this end, the first process chamber unit 650 includes a process chamber 652, a shower head 654, and a third air curtain 656, as shown in FIG. 9.

The process chamber 652 is installed inside the common chamber 530 to face an outer circumferential surface of one side of the heating roller 640.

The shower head 654 is installed inside the process chamber 652 to inject the first process gas supplied from the outside into the reaction space to be described later.

The third air curtain portion 656 is installed on both side chamber walls of the process chamber 652 to hermetically seal between the flexible substrate FS and the chamber wall of the process chamber 652 using the injection and suction of the gas tight. The reaction space is hermetically sealed inside the process chamber 652. To this end, the third air curtain portion 656 includes a third body 712, a third gas injector 714, and a third gas intake 716.

The third body 712 is installed on each side chamber wall of the process chamber 652.

The third gas injector 714 is installed at one edge or the other edge of the third body 712 to inject a gas tight gas of a predetermined pressure supplied from the outside toward the third gas inlet 716. Here, the gas tight gas may be nitrogen (N ₂ ) gas.

The third gas inlet 716 is installed at the other edge or one edge of the third body 712 so as to be opposite to the installation position of the third gas injector 714, and the airtight air is injected from the third gas injector 714. Inhale gas.

Meanwhile, the third body 712 may further include a curved surface formed between the third gas injector 714 and the third gas inlet 716 to smoothly flow the gas for airtightness.

The third air curtain unit 656 further includes the above-described process gas leakage preventing unit (see FIG. 5) in order to prevent the process gas supplied to the first process chamber unit 650 from flowing out. Can be.

The second process chamber unit 660 is installed in the common chamber 530 to face the outer circumferential surface of the heating roller 640 so as to be adjacent to the first process chamber unit 650. The second process chamber unit 660 is a second semiconductor layer on the first semiconductor layer of the flexible substrate FS through a plasma process using a second process gas under a predetermined pressure for forming the second semiconductor layer. To form.

To this end, the second process chamber unit 660 includes a process chamber 662, a shower head 664, and a third air curtain 666, as shown in FIG. 9. Since the second process chamber unit 660 having such a configuration is the same as the first process chamber unit 660 described above except for the reference numerals, the description of the same configuration will be described in the above-described first process chamber unit 660. I'll replace it with an explanation.

The third process chamber unit 670 is installed in the common chamber 530 to face the outer circumferential surface of the heating roller 640 so as to be adjacent to the second process chamber unit 660. The third process chamber unit 670 is formed on the second semiconductor layer of the flexible substrate FS through a plasma process using a third process gas under a predetermined pressure for forming the third semiconductor layer. To form.

To this end, the third process chamber unit 670 includes a process chamber 672, a shower head 674, and a third air curtain 676, as shown in FIG. 9. Since the third process chamber unit 670 having such a configuration is the same as the first process chamber unit 660 described above except for the reference numerals, a description of the same configuration is provided in the first process chamber unit 660 described above. The description will be replaced.

In FIG. 7, the second pumping device 682 is installed to communicate with the common chamber 530 through the outer chamber 510 so as to supply a predetermined pressure to the internal pressure of the common chamber 530 hermetically sealed by the hermetic unit 630. Lowers.

The third pumping device 684 passes through the outer chamber 510 and the common chamber 530 to communicate with the process chamber 652 of the first process chamber unit 650 to provide a reaction space provided in the process chamber 652. The internal pressure is lowered to the predetermined pressure. At this time, the third pumping device 684 lowers the reaction space of the process chamber 652 hermetically sealed by the third air curtain 656 to a pressure corresponding to the process conditions for forming the first semiconductor layer.

The fourth pumping device 686 passes through the outer chamber 510 and the common chamber 530 to communicate with the process chamber 662 of the second process chamber unit 660 to provide a reaction space provided in the process chamber 662. The internal pressure is lowered to the predetermined pressure. At this time, the fourth pumping device 686 is lowered to a pressure corresponding to the process conditions for forming the second semiconductor layer in the reaction space of the process chamber 662 hermetically sealed by the third air curtain portion 666.

The fifth pumping device 688 penetrates the outer chamber 510 and the common chamber 530 to communicate with the process chamber 672 of the third process chamber unit 670 to provide a reaction space in the process chamber 672. The internal pressure is lowered to the predetermined pressure. At this time, the fifth pumping device 688 is lowered to a pressure corresponding to the process conditions for forming the third semiconductor layer in the reaction space of the process chamber 672 hermetically sealed by the third air curtain 676.

The common chamber 530 rotates the heating roller 640 and simultaneously uses the heating rollers 656, 666, and 676 of the first to third process chamber units 650, 660, and 670. The first to third semiconductor layers are sequentially formed on the first electrode layer formed on the flexible substrate FS by sealing between the flexible substrate FS conveyed along the outer circumferential surface of the 640 and the process chambers 652, 662, and 672. To form. Accordingly, the common chamber 530 may hermetically seal the process chambers 652, 662, and 672 through the air curtains 656, 666, and 676 in a non-contact manner to prevent damage to the thin film formed on the flexible substrate FS. Can be.

10 is a view for explaining a method of manufacturing a thin film solar cell according to a second embodiment of the present invention.

Referring to FIG. 10 and FIG. 9, a method of manufacturing a thin film solar cell according to a second exemplary embodiment of the present invention is as follows.

First, the back and top surfaces of the flexible substrate FS conveyed to the common chamber 530 by driving the first and second air curtain portions 310 and 320 of the airtight unit 630 installed in the common chamber 530. In addition to airtightness, the reaction space provided in the common chamber 530 is lowered to a predetermined pressure.

Subsequently, the flexible substrate may be formed along the outer circumferential surface of the heating roller 640 by interlocking the substrate feeding roller 120, the substrate recovery roller 160, and the heating roller 640 according to a roll to roll method. While conveying FS continuously, the flexible board | substrate FS is heated to predetermined temperature via the heating roller 640. As shown in FIG.

At the same time, the air curtains 656, 666, and 676 of the first to third process chamber units 650, 660, and 670 of the common chamber 530 are driven to be conveyed along the outer circumferential surface of the heating roller 640. The pressure between the flexible substrate FS and each process chamber 652, 662, 672 and the pressure of the reaction space provided inside the process chamber 652, 662, 672 to form the semiconductor layer. Lowers.

At the same time, the process gas corresponding to the process of each process chamber 652, 662, 672 is supplied to each shower head 654, 664, 674, and through each shower head 654, 664, 674 to a reaction space. The injection process gas is converted into plasma to form a semiconductor layer on the flexible substrate FS. Accordingly, in the first process chamber unit 650, a first semiconductor layer is formed on the first electrode layer formed on the flexible substrate FS, and in the second process chamber unit 660, the first semiconductor layer is formed on the flexible substrate FS. A second semiconductor layer is formed on the formed first semiconductor layer, and a third semiconductor layer is formed on the second semiconductor layer formed on the flexible substrate FS in the third process chamber unit 670.

As described above, the method of manufacturing the thin film solar cell according to the second exemplary embodiment of the present invention includes a flexible substrate continuously conveyed along the circumferential surface of the heating roller 640 using the air curtains 656, 666, and 676. The airtightness between the FS and each of the process chambers 652, 662, and 672 in a non-contact manner can prevent damage to the thin film formed on the flexible substrate FS and can greatly improve productivity through a continuous process.

Those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention. do.

1 is a view for explaining a conventional thin film solar cell manufacturing apparatus.

2A to 2C are views for explaining a method of driving a conventional thin film solar cell manufacturing apparatus.

3 is a view for explaining an apparatus for manufacturing a thin film solar cell according to a first embodiment of the present invention.

FIG. 4 is an enlarged view of a portion B shown in FIG. 3 to describe an airtight unit according to a first embodiment of the present invention.

FIG. 5 is an enlarged view of a portion B shown in FIG. 3 to describe an airtight unit according to a second embodiment of the present disclosure.

6A and 6B are views for explaining step-by-step a method of manufacturing a thin film solar cell according to a first embodiment of the present invention.

7 is a view for explaining a manufacturing apparatus of a thin film solar cell according to a second embodiment of the present invention.

FIG. 8 is an enlarged view of a portion C shown in FIG. 7.

FIG. 9 is an enlarged view of a portion D shown in FIG. 7.

10 is a view for explaining a method of manufacturing a thin film solar cell according to a second embodiment of the present invention.

<Explanation of Signs of Major Parts of Drawings>

FS: flexible substrate

110, 530: common chamber

112, 114, 136, 512, 514, 682, 684, 686, 688: pumping device

120, 520: substrate feeding roller

130, 140, 150, 650, 660, 670: process chamber unit

132: heater

134, 654, 664, 674: shower head

160, 540: substrate recovery roller

300, 630: air tight unit

310, 320, 656, 666, 676: air curtain

510: outer chamber

610: lower common chamber

620: upper common chamber

630: heating roller

Claims (27)

A process chamber unit for forming a semiconductor layer on the flexible substrate using a plasma process, The process chamber unit, Lower chamber; An upper chamber disposed to face the lower chamber with the flexible substrate therebetween to form a reaction space; And An air curtain positioned between the lower chamber and the upper chamber to convey the flexible substrate is sealed between the upper chamber and the flexible substrate while airtight between the lower chamber and the flexible substrate. And an airtight unit configured to maintain the airtightness of the reaction space. The method of claim 1, The hermetic unit, First air curtains disposed on both side chamber walls of the lower chamber to seal between the chamber wall of the lower chamber and the rear surface of the flexible substrate; And And a second air curtain part installed on both side chamber walls of the upper chamber and airtight between the chamber wall of the upper chamber and the upper surface of the flexible substrate. The method of claim 2, Each of the first and second air curtain portions, A body mounted to the chamber wall; A gas injector installed at one side of the body to inject an airtight gas to the flexible substrate; And And a gas suction part installed on the other side of the body to suck the gas for gas leaking from the gas injecting part to seal the reaction space. The method of claim 3, wherein The hermetic gas is a thin film solar cell manufacturing apparatus, characterized in that the nitrogen gas. The method of claim 1, The process chamber unit, A heater installed in the lower chamber; And And a shower head installed in the upper chamber and configured to inject a process gas for forming the semiconductor layer into a reaction space formed by the lower chamber and the upper chamber. . Shared chamber; A substrate feeding roller installed at one side of the common chamber to convey a flexible substrate; A substrate recovery roller installed at the other side of the common chamber to recover the flexible substrate; And Any one of claims 1 to 5 provided between said substrate feeding roller and said substrate recovery roller for forming a semiconductor layer on said flexible substrate conveyed by simultaneous driving of said substrate feeding roller and said substrate recovery roller. An apparatus for manufacturing a thin-film solar cell, comprising the plurality of process chamber units according to claim. The method of claim 6, At least one first pumping device for lowering an internal pressure in the common chamber; And And a plurality of second pumping devices for lowering internal pressure of each of the plurality of process chamber units. The method of claim 6, The plurality of process chamber units, A first process chamber unit for forming a first semiconductor layer on the first electrode layer formed on the flexible substrate; A second process chamber unit for forming a second semiconductor layer on the first semiconductor layer formed on the flexible substrate; And And a third process chamber unit for forming a third semiconductor layer on the second semiconductor layer formed on the flexible substrate. It includes a common chamber having a reaction space for forming a semiconductor layer on the flexible substrate conveyed by the simultaneous driving of the substrate feeding roller and the substrate recovery roller provided inside the outer chamber, The common chamber, Lower common chamber; An upper common chamber installed to face the lower common chamber with the conveyed flexible substrate therebetween; An airtight unit that maintains the airtight inside the common chamber by using an air curtain located at a substrate entrance provided between the lower common chamber and the upper common chamber so that the flexible substrate is conveyed; A heating roller for heating the flexible substrate to a predetermined temperature while conveying the flexible substrate through an outer circumferential surface; And It is provided at a predetermined interval to face the outer circumferential surface of the heating roller, and comprises a plurality of process chamber units for forming the semiconductor layer on the flexible substrate conveyed along the outer circumferential surface of the heating roller using a plasma process An apparatus for manufacturing a thin film solar cell, characterized in that. The method of claim 9, The hermetic unit, First air curtains disposed on both side chamber walls of the lower common chamber to seal between the chamber wall of the lower common chamber and the rear surface of the flexible substrate; And And a second air curtain part installed on both side chamber walls of the upper common chamber and airtight between the chamber wall of the upper common chamber and the upper surface of the flexible substrate. 11. The method of claim 10, Each of the first and second air curtain portions, A first body mounted to the chamber wall; A first gas injector installed on one side of the first body to inject an airtight gas to the flexible substrate; And And a first gas suction part installed on the other side of the first body to suck an airtight gas injected from the first gas injector to seal the reaction space of the common chamber. Manufacturing device. The method of claim 9, The plurality of process chamber units, A first process chamber unit for forming a first semiconductor layer on the first electrode layer formed on the flexible substrate; A second process chamber unit for forming a second semiconductor layer on the first semiconductor layer formed on the flexible substrate; And And a third process chamber unit for forming a third semiconductor layer on the second semiconductor layer formed on the flexible substrate. 13. The method of claim 12, Each of the first to third process chamber units, A process chamber installed to face the flexible substrate conveyed along the outer circumferential surface of the heating roller to form a reaction space; A shower head installed in the process chamber to inject a process gas into a reaction space of the process chamber; And And a third air curtain part provided on the chamber wall of the process chamber to hermetically seal the reaction space of the process chamber using an air curtain. The method of claim 13, The third air curtain unit, A second body mounted to the chamber wall; A second gas injector installed on one side of the second body to inject an airtight gas to the flexible substrate; And And a second gas suction part installed on the other side of the second body to suck the gas for gas leaking from the second gas injector to seal the reaction space. The method according to claim 11 or 14, The hermetic gas is a thin film solar cell manufacturing apparatus, characterized in that the nitrogen gas. The method of claim 9, The common chamber, A first substrate guide roller installed in the common chamber to guide the flexible substrate conveyed into the shared chamber toward the outer circumferential surface of the heating roller; And And a second substrate guide roller installed in the common chamber to guide the flexible substrate conveyed along the outer circumferential surface of the heating roller to the substrate recovery roller. Manufacturing device. The method of claim 9, At least one first pumping device for lowering an internal pressure of the outer chamber; A second pumping device for lowering the internal pressure of the common chamber; And And a plurality of third pumping devices for lowering internal pressure of each of the plurality of process chamber units. Conveying the flexible substrate so as to pass between the lower chamber and the upper chamber which are installed to face each other and form a reaction space; Maintaining an air tightness of the reaction space using an air curtain; And And forming a semiconductor layer on the flexible substrate by using a plasma formed by the process gas supplied to the reaction space. Simultaneously driving the substrate feeding roller and the substrate recovery roller installed in the common chamber to pass through the reaction space provided by the lower chamber and the upper chamber of each of the plurality of process chamber units provided between the substrate feeding roller and the substrate recovery roller. Conveying the flexible substrate; Maintaining the airtightness of the reaction space of each process chamber unit using an air curtain; And And forming a semiconductor layer on the flexible substrate using a plasma formed by a process gas supplied to the reaction space of each process chamber unit. 20. The method according to claim 18 or 19, Maintaining airtightness of the reaction space, The airtight gas is injected to the rear surface of the flexible substrate by using first air curtains provided on both side chamber walls of the lower chamber, and the injected gastight gas is sucked in to allow the chamber wall of the lower chamber and the flexible substrate to be injected. Hermetically sealing between the back of the; And The airtight gas is injected onto the upper surface of the flexible substrate by using second air curtains provided on both side chamber walls of the upper chamber, and the injected gastight gas is sucked in to allow the chamber wall of the upper chamber and the flexible material to be injected. A method of manufacturing a thin film solar cell comprising the step of airtight between the upper surface of the substrate. 20. The method according to claim 18 or 19, The forming of the semiconductor layer on the flexible substrate may include forming the semiconductor layer while the flexible substrate is being conveyed. The method of claim 19, Forming a semiconductor layer on the flexible substrate, Forming a first semiconductor layer on a first electrode layer formed on the flexible substrate in a first process chamber unit of the plurality of process chamber units; Forming a second semiconductor layer on the first semiconductor layer formed on the flexible substrate in a second process chamber unit of the plurality of process chamber units; And Forming a third semiconductor layer on the second semiconductor layer formed on the flexible substrate in a third process chamber unit of the plurality of process chamber units. In the manufacturing method of the thin film type solar cell containing the common chamber for forming a semiconductor layer in the flexible substrate continuously conveyed by the interlocking of the board | substrate feeding roller and the board | substrate collection roller provided in the outer chamber, A first step of conveying the flexible substrate to drive the substrate feeding roller and the substrate recovery roller simultaneously to pass between the lower common chamber and the upper common chamber of the shared chamber; A second step of maintaining airtightness between the flexible substrate and the lower common chamber and between the flexible substrate and the upper common chamber using an air curtain; A third step of conveying the flexible substrate along an outer circumferential surface of the heating roller according to the rotation of the heating roller installed in the common chamber; And A fourth step of forming the semiconductor layer on the flexible substrate conveyed along the outer circumferential surface of the heating roller by using a plasma process by a plurality of process chamber units disposed at predetermined intervals to face the outer circumferential surface of the heating roller; Method for producing a thin-film solar cell, characterized in that made. The method of claim 23, wherein The second step, The gaseous gas is injected to the rear surface of the flexible substrate by using the first air curtains installed on both side chamber walls of the lower common chamber, and the injected airtight gas is sucked into the chamber wall and the flexible chamber of the lower common chamber. Hermetically sealing between the back side of the substrate; And The airtight gas is injected onto the upper surface of the flexible substrate by using second air curtains provided on both side chamber walls of the upper common chamber, and the inhaled gas is injected into the chamber wall of the upper common chamber. A method of manufacturing a thin film solar cell comprising the step of airtight between the upper surface of the flexible substrate. The method of claim 23, wherein The fourth step, Airtight between each of the plurality of process chamber units and the flexible substrate using an air curtain to form a reaction space in each of the plurality of process chamber units; And And forming the semiconductor layer on the flexible substrate in each process chamber unit. The method of claim 25, Forming a reaction space in each of the plurality of process chamber units may inject gas for airtight onto the upper surface of the flexible substrate by using a third air curtain part provided on both side chamber walls of the process chambers of each of the plurality of process chamber units. And inhaling the injected gas-tight gas to hermetically seal between the chamber wall of the process chamber and the upper surface of the flexible substrate. The method of claim 25, Forming the semiconductor layer on the flexible substrate in each process chamber unit, Forming a first semiconductor layer on a first electrode layer formed on the flexible substrate in a first process chamber unit of the plurality of process chamber units; Forming a second semiconductor layer on the first semiconductor layer formed on the flexible substrate in a second process chamber unit of the plurality of process chamber units; And Forming a third semiconductor layer on the second semiconductor layer formed on the flexible substrate in a third process chamber unit of the plurality of process chamber units.

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