TWI664690B - Epitaxy processing system with automatic transfer system and automatically transferring method thereof - Google Patents
Epitaxy processing system with automatic transfer system and automatically transferring method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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Abstract
一種磊晶製程系統提供反應模組、傳送模組和載入/載出模組,傳送模組和載入/載出模組分別具有二個暫存機構,放置未經磊晶反應之晶圓的承載盤由載入/載出模組的二暫存機構之一或該傳送模組的一暫存機構被挪移至反應模組的反應腔體處以搭配頂棚進行磊晶反應,如此藉由傳送模組於反應模組、傳送模組和載入/載出模組之間自動傳送承載盤和頂棚。An epitaxial process system provides a reaction module, a transfer module, and a load / unload module. The transfer module and the load / unload module each have two temporary storage mechanisms for placing wafers without epitaxial reactions. The loading tray is moved from one of the two temporary storage mechanisms of the loading / unloading module or a temporary storage mechanism of the transfer module to the reaction chamber of the reaction module to perform epitaxial reaction with the ceiling. The module automatically transfers the carrier tray and the ceiling between the reaction module, the transmission module and the loading / unloading module.
Description
本發明是關於一種磊晶形成設備的領域,特別是關於一種磊晶手套箱設備和其自動傳送方法。 The invention relates to the field of an epitaxial formation device, in particular to an epitaxial glove box device and an automatic transfer method thereof.
一般的磊晶製程機台包括反應模組、傳送模組和載入/載出模組,晶圓可被傳送模組傳遞於反應模組和載入/載出模組之間。由於磊晶成長反應時間長,且需經過漸進的降溫過程以避免損害磊晶層,故,如何兼顧降低機台停機時間和晶圓的磊晶品質是磊晶製程重要的課題之一。 A general epitaxial process machine includes a reaction module, a transfer module, and a load / unload module. The wafer can be transferred between the reaction module and the load / unload module by the transfer module. Since the epitaxial growth reaction time is long and it needs to go through a gradual temperature reduction process to avoid damaging the epitaxial layer, how to balance the reduction of machine downtime and wafer epitaxial quality is one of the important issues in the epitaxial process.
本發明提供一種磊晶製程系統和其自動傳送方法,其僅使用三個模組即可構成具有自動傳送功能的系統架構,解決習知需額外設置一暫存區模組的設計,可減少占地面積(foot print)和降低機台設備的成本。 The invention provides an epitaxial process system and an automatic transmission method thereof, which uses only three modules to form a system architecture with an automatic transmission function. It solves the conventional design that requires an additional temporary storage module to reduce the occupation. Footprint and reduce the cost of machine equipment.
本發明提供一種磊晶製程系統和其自動傳送方法,其在傳送模組(Transfer Module,TM)和載入/載出模組(Load Lock Module,LLM)處分別設置兩個暫存空間,即可在磊晶製程機台中進行承載盤(susceptor)和頂棚(ceiling)的循環交換,減少機台的停機(downtime),增加機台使用效率。 The invention provides an epitaxial process system and an automatic transmission method thereof, which respectively set two temporary storage spaces at a transfer module (TM) and a load lock module (LLM), that is, Cyclic exchange of the carrier and ceiling can be performed in the epitaxial process machine to reduce machine downtime and increase machine efficiency.
本發明提供一種磊晶製程系統和其自動傳送方法,其僅使用三個模組即可構成具有自動傳送功能,模組內設置歸位機構可進行個模組間的相互定位校準,增加機台作動時的準確度。 The invention provides an epitaxial process system and an automatic transmission method thereof. It uses only three modules to form an automatic transmission function. A return mechanism is provided in the module to perform mutual positioning and calibration between the modules, thereby increasing the number of machines. Accuracy during operation.
依據上述,一種磊晶製程系統,包括:一反應模組(RM)包含一反應腔體,一承載盤(susceptor)和一頂棚(ceiling)容置於該反應腔體中以協助該承載盤中的至少一晶圓(wafer)進行一磊晶反應;一傳送模組(TM),包括一第一暫存機構(stage)(T2)與一第二暫存機構(T1),其中,該第一暫存機構提供置放該承載盤之用,該第二暫存機構提供置放該頂棚之用;一載入/載出模組(LLM),包括一載入/載出腔體以及一第三暫存機構(L2)容置於該載入/載出腔體中,該第三暫存機構提供置放該承載盤或該頂棚之用;以及一第四暫存機構(L1)置於該載入/載出腔體下方並提供置放該承載盤或該頂棚之用;其中,放置未經磊晶反應之該晶圓的該承載盤由該第三暫存機構、該第四暫存機構以及該第一暫存機構三者之一被挪移至該反應腔體處。 According to the above, an epitaxial process system includes: a reaction module (RM) including a reaction chamber, a susceptor and a ceiling housed in the reaction chamber to assist the carrier At least one wafer undergoes an epitaxial reaction; a transfer module (TM) includes a first stage storage mechanism (T2) and a second stage storage mechanism (T1), wherein the first A temporary storage mechanism is provided for placing the carrier disk, the second temporary storage mechanism is provided for placing the ceiling; a loading / unloading module (LLM), including a loading / unloading cavity and a A third temporary storage mechanism (L2) is accommodated in the loading / unloading cavity, and the third temporary storage mechanism is provided for placing the carrier tray or the ceiling; and a fourth temporary storage mechanism (L1) is placed The loading / unloading cavity is provided below the loading tray or the ceiling; wherein the loading tray for placing the wafer without epitaxial reaction is provided by the third temporary storage mechanism, the fourth One of the three temporary storage mechanisms and the first temporary storage mechanism was moved to the reaction chamber.
依據上述,一種自動傳送方法,運作於可連通和隔絕的一載入/載出腔體、一傳送模組和一反應腔體中,包括:提供該傳送模組中的一第一暫存機構(stage)(T2)與一第二暫存機構(T1);提供於該載入/載出腔體中的一第三暫存機構(L2);提供於該載入/載出腔體下方的一空間中的一第四暫存機構(L1),該空間與該傳送模組連通;於該反應腔體中對一第一晶圓進行一磊晶反應,該第一晶圓放置於一第一承載盤中,且於該磊晶反應過程中有一第一頂棚配合該第一承載盤;提供具有一第二晶圓的一第二承載盤,該第二承載盤被放置於閒置中的該第三暫存機構、該第四暫存機構和該第一暫存機構三者之一以等待進行該磊晶反應;以及傳送該第一承載盤和該第二承載盤,在該第二承載盤被放 置於該第三或該第四暫存機構的情況時,完成該磊晶反應的該第一承載盤由該反應腔體中被傳送至該第一暫存機構以進行降溫,然後傳送該第二承載盤至該反應腔體中以進行該磊晶反應;在該第二承載盤被放置於該第一暫存機構的情況時,完成該磊晶反應的該第一承載盤由該反應腔體中被傳送至該第三暫存機構或該第四暫存機構以進行降溫,然後傳送該第二承載盤至該反應腔體中以進行該磊晶反應。 According to the above, an automatic transfer method, which operates in a loading / unloading cavity, a transfer module, and a reaction cavity, which can be connected and isolated, includes: providing a first temporary storage mechanism in the transfer module. (stage) (T2) and a second temporary storage mechanism (T1); a third temporary storage mechanism (L2) provided in the loading / loading cavity; provided under the loading / loading cavity A fourth temporary storage mechanism (L1) in a space, the space is in communication with the transfer module; an epitaxial reaction is performed on a first wafer in the reaction chamber, and the first wafer is placed in a In the first carrier tray, a first ceiling cooperates with the first carrier tray during the epitaxial reaction; a second carrier tray having a second wafer is provided, and the second carrier tray is placed in an idle state. One of the third temporary storage mechanism, the fourth temporary storage mechanism, and the first temporary storage mechanism to wait for the epitaxial reaction; and transmitting the first carrier disk and the second carrier disk in the second The carrier tray is put When placed in the third or the fourth temporary storage mechanism, the first carrier tray that completes the epitaxial reaction is transferred from the reaction chamber to the first temporary storage mechanism for cooling, and then the first Two carrier disks are inserted into the reaction chamber to perform the epitaxial reaction. When the second carrier disk is placed in the first temporary storage mechanism, the first carrier disk that completes the epitaxial reaction is provided by the reaction chamber. The body is transferred to the third temporary storage mechanism or the fourth temporary storage mechanism to cool down, and then the second carrier tray is transferred to the reaction chamber to perform the epitaxial reaction.
2‧‧‧磊晶製程機台 2‧‧‧Epistar Process Machine
12‧‧‧反應模組 12‧‧‧Reaction Module
13‧‧‧第一閘閥機構 13‧‧‧The first gate valve mechanism
14‧‧‧傳送模組 14‧‧‧Transfer Module
15‧‧‧第二閘閥機構 15‧‧‧Second gate valve mechanism
16‧‧‧載入/載出模組 16‧‧‧Load / Unload Module
17‧‧‧第三閘閥機構 17‧‧‧The third gate valve mechanism
19‧‧‧齒輪 19‧‧‧ Gear
20‧‧‧匣部件 20‧‧‧box parts
21‧‧‧歸位機構 21‧‧‧ Homing Agency
22‧‧‧反應腔體 22‧‧‧ reaction chamber
23‧‧‧位置 23‧‧‧Location
24‧‧‧頂棚 24‧‧‧ ceiling
25‧‧‧位置 25‧‧‧Location
26‧‧‧承載盤 26‧‧‧carriage tray
27‧‧‧晶圓 27‧‧‧ wafer
29‧‧‧感測器 29‧‧‧Sensor
39‧‧‧作動部件 39‧‧‧ Actuating parts
44‧‧‧第一暫存機構 44‧‧‧The first temporary storage institution
46‧‧‧第二暫存機構 46‧‧‧Second temporary storage institution
48‧‧‧機械手臂 48‧‧‧ robotic arm
49‧‧‧夾取機構 49‧‧‧Clamping mechanism
51、52、53、54、55、56、57‧‧‧步驟 51, 52, 53, 54, 55, 56, 57‧‧‧ steps
60‧‧‧空間 60‧‧‧ space
61‧‧‧上蓋 61‧‧‧ Upper cover
62‧‧‧載入/載出腔體 62‧‧‧Load in / out cavity
63‧‧‧滑台 63‧‧‧Slide
64‧‧‧第三暫存機構 64‧‧‧Third temporary storage institution
65‧‧‧凹槽 65‧‧‧Groove
66‧‧‧第四暫存機構 66‧‧‧Fourth temporary storage institution
67‧‧‧銷 67‧‧‧pin
68‧‧‧基台 68‧‧‧ abutment
69‧‧‧滑台推入定位感測器 69‧‧‧Slide into the positioning sensor
71‧‧‧旋轉感測器 71‧‧‧rotation sensor
73‧‧‧直齒輪 73‧‧‧ spur gear
圖1為本發明之一磊晶製程機台實施例的部分機構/部件位置的側面示意圖。 FIG. 1 is a schematic side view of part of a mechanism / component position of an embodiment of an epitaxial process machine according to the present invention.
圖2為本發明之一磊晶製程機台執行面朝上(face up)的部分機構的配置和傳送方式實施例的側視示意圖。 FIG. 2 is a schematic side view of an embodiment of a configuration and transmission method of part of an epitaxial process machine performing face up according to one embodiment of the present invention.
圖3為為本發明之一磊晶製程機台面朝下(face down)實施例的側面示意圖。 FIG. 3 is a schematic side view of an embodiment of an epitaxial process machine face down according to the present invention.
圖4為本發明之磊晶製程機台執行面朝下(face up)的部分機構/部件位置的側視示意圖。 FIG. 4 is a schematic side view of a portion of a mechanism / component performing a face-up of an epitaxial process machine according to the present invention.
圖5A為本發明之傳送模組、部分的閘閥機構和暫存機構之第一實施例的配置俯視圖。 FIG. 5A is a top view of the configuration of the first embodiment of the transfer module, part of the gate valve mechanism and the temporary storage mechanism of the present invention.
圖5B為本發明之傳送模組、部分的閘閥機構和暫存機構之第二實施例的配置俯視圖。 FIG. 5B is a top view of the configuration of the second embodiment of the transfer module, part of the gate valve mechanism and the temporary storage mechanism of the present invention.
圖5C為本發明之傳送模組、部分的閘閥機構和暫存機構之第三實施例的配置俯視圖。 FIG. 5C is a top view of the configuration of the third embodiment of the transfer module, part of the gate valve mechanism and the temporary storage mechanism of the present invention.
圖6A為本發明之一載入/載出模組的部分結構的立體側前視示意圖。 FIG. 6A is a schematic perspective front view of a part of a structure of a loading / unloading module according to the present invention. FIG.
圖6B為本發明之一載入/載出模組的部分結構的另一立體側前視示意圖。 FIG. 6B is another schematic front perspective view of another part of the structure of a loading / unloading module of the present invention.
圖6C為本發明之一載入/載出模組的部分結構和放置匣部件的前視示意圖。 FIG. 6C is a schematic front view of a part of a structure of a loading / unloading module and a component for placing a cassette according to the present invention.
圖6D為本發明之一載入/載出模組的部分結構的另一立體前視示意圖。 FIG. 6D is another schematic three-dimensional front view of a partial structure of a loading / unloading module according to the present invention.
圖7A為本發明之設置歸位機構的俯視示意圖。 FIG. 7A is a schematic top view of a positioning mechanism according to the present invention.
圖7B為本發明之歸位機構的立體側視示意圖。 FIG. 7B is a schematic three-dimensional side view of the homing mechanism of the present invention.
圖7C為本發明之反應模組設置歸位機構的側視示意圖。 FIG. 7C is a schematic side view of a positioning mechanism provided in the reaction module of the present invention.
圖8為本發明之載入/載出模組設置歸位機構的部分立體後視示意圖。 FIG. 8 is a schematic partial rear view of the loading / unloading module provided with a homing mechanism according to the present invention.
圖9為本發明之一自動傳送方法實施例的步驟示意圖。 FIG. 9 is a schematic diagram of steps of an embodiment of an automatic transmission method according to the present invention.
本發明以下所稱的磊晶製程系統,主要為包括手套箱設備的磊晶製程設備。磊晶製程設備的手套箱設備一般包括的氣體管路系統、控制系統等,於此雖不顯示於圖上和說明,但可以理解的,實際體現於機台時將包括磊晶製程設備的必要系統。 The epitaxial process system hereinafter referred to in the present invention is mainly an epitaxial process device including a glove box device. The glove box equipment of the epitaxial process equipment generally includes the gas piping system and control system. Although it is not shown on the figure and explained here, it is understandable that the actual need for the epitaxial process equipment will be included in the machine. system.
另外,本發明以下所稱的暫存機構,可以包括一或多個底座放置物件,或是利用一或多個夾取機構固定物件,或是承載機構放置物件,其中, 此處的物件為承載盤或頂棚。為保護放置或夾取的物件,底座或夾取機構可以是以陶瓷或石磨材料製作的裝置,或是具有陶瓷件或石磨件設置於暫存機構與物件接觸或承靠的位置處,例如底座由金屬材料製作,但在底座的邊緣設有陶瓷件或石磨件以供物件承靠。 In addition, the temporary storage mechanism hereinafter referred to in the present invention may include one or more bases for placing objects, or one or more gripping mechanisms for fixing objects, or a carrying mechanism for placing objects. Among them, The objects here are carrier trays or ceilings. In order to protect the placed or gripped objects, the base or gripping mechanism may be a device made of ceramic or stone-grinding material, or a ceramic or stone-grinding element may be provided at a position where the temporary storage mechanism contacts or bears on the object. For example, the base is made of a metal material, but ceramic or stone grinding parts are provided on the edge of the base to support the object.
又,以下所稱的磊晶晶圓(epitaxy wafer)係指經過化學氣相沉積等適當方式,在基板晶圓(substrate wafer)上成長一或多層磊晶層。故於本發明中,基板晶圓和和磊晶晶圓的區別是指經歷磊晶成長的前後物件。若未特別提及時,以下的晶圓則可以是基板晶圓或磊晶晶圓或二者。 In addition, an epitaxy wafer (hereinafter referred to as an epitaxy wafer) refers to one or more epitaxial layers grown on a substrate wafer through a suitable method such as chemical vapor deposition. Therefore, in the present invention, the difference between the substrate wafer and the epitaxial wafer refers to the objects before and after the epitaxial growth. Unless otherwise mentioned, the following wafers may be substrate wafers or epitaxial wafers or both.
圖1為本發明之一磊晶製程機台實施例的部分機構/部件位置的側面示意圖。參考圖1,本發明的磊晶製程機台2包括三個模組:反應模組12(reaction module,RM)、傳送模組14(TM)和載入/載出模組16(LLM)。反應模組12是提供進行晶圓的磊晶成長的場所和相關機構,其中,一或多個頂棚24和一或多個承載盤26可被安排在反應模組12的反應腔體22中。每一承載盤26中可容置一或多片晶圓(圖上未繪),未經磊晶成長的晶圓(基板晶圓)可在反應模組12中進行磊晶成長的磊晶反應。載入/載出模組16是提供準備未經磊晶成長的晶圓(基板晶圓)和卸取完成磊晶製程的晶圓(磊晶晶圓)的場所和相關機構,傳送模組14則是提供晶圓和相關物件傳遞的場所和相關機構。是以,傳送模組14通常設置介於反應模組12和載入/載出模組16之間。其次,本發明廣義的反應模組12、傳送模組14和載入/載出模組16分別占有各自的長、寬、高的一空間並且更可包括一腔體。腔體可以占滿或小於各自所占有的空間,且其內可以設置或放置模組的機構。在各自的腔體小於各自所占有的空間的情況時,占有的空間的剩餘部分可以設置或規劃其他機構。於一實施例中,反應模組12包括一反應腔體22,載入/載出模 組16包括一載入/載出腔體62。其次,本發明可指的反應模組12、傳送模組14和載入/載出模組16亦分別可為氮氣盒(nitrogen box)設計,各氮氣盒之間可設置閘閥機構,藉以作為氣體連通的通道或/和氣體隔絕、以及物件傳遞或/和隔離的通道。 FIG. 1 is a schematic side view of part of a mechanism / component position of an embodiment of an epitaxial process machine according to the present invention. Referring to FIG. 1, the epitaxial process machine 2 of the present invention includes three modules: a reaction module 12 (reaction module, RM), a transfer module 14 (TM), and a loading / unloading module 16 (LLM). The reaction module 12 is a place for providing epitaxial growth of wafers and related mechanisms. Among them, one or more ceilings 24 and one or more carrier trays 26 may be arranged in the reaction chamber 22 of the reaction module 12. One or more wafers (not shown in the figure) can be accommodated in each carrier tray 26, and the wafers (substrate wafers) that have not been epitaxially grown can undergo epitaxial growth epitaxial reactions in the reaction module 12. . The loading / unloading module 16 is a place and related mechanism for preparing a wafer (substrate wafer) without epitaxial growth and unloading a wafer (epitaxial wafer) that has completed an epitaxial process, and transfers the module 14 It is the place and related institutions that provide the transfer of wafers and related objects. Therefore, the transmission module 14 is usually disposed between the reaction module 12 and the loading / unloading module 16. Secondly, the reaction module 12, the transmission module 14, and the loading / unloading module 16 in the broad sense of the present invention respectively occupy a space of their respective length, width, and height and may further include a cavity. The cavities can fill up or be smaller than the space occupied by each, and a module mechanism can be set or placed inside. When the respective cavities are smaller than the respective occupied spaces, other mechanisms may be provided or planned for the remaining part of the occupied spaces. In one embodiment, the reaction module 12 includes a reaction cavity 22 for loading / unloading the mold. The group 16 includes a loading / unloading cavity 62. Secondly, the reaction module 12, the transfer module 14, and the loading / unloading module 16 that can be referred to in the present invention can also be designed for nitrogen boxes, and a gate valve mechanism can be set between the nitrogen boxes to serve as a gas Connected channels or / and gas-isolated channels and / or object-passed // isolated channels.
圖2為本發明之一磊晶製程機台執行面朝上(face up)的部分機構的配置和傳送方式實施例的側視示意圖。請同時參照圖1和圖2,其次,傳送模組14更包括一第一暫存機構44(stage)和一第二暫存機構46,載入/載出模組16則更包括一第三暫存機構64和一第四暫存機構66。於一實施例中,一第一閘閥機構13(RTGV)設置於反應模組12和傳送模組14之間,一第二閘閥機構15(TLGV)設置於傳送模組14和載入/載出模組16之間,一第三閘閥機構17(LAGV)設置於載入/載出模組16和一外界之間。又,於一實施例中,於一完整的磊晶製程過程(包括傳送物件、進行磊晶成長和反應前後的升降溫和吹淨)中,第一暫存機構44可提供置放承載盤之用,第二暫存機構46可提供置放頂棚24之用。其次,第三暫存機構64和第四暫存機構66則皆可分別提供置放承載盤26或頂棚24之用,其中,在位置安排上,第四暫存機構66是置於載入/載出腔體62下方的空間60中,且此空間60的氮氣循環可和傳送模組14一起。再者,介於傳送模組14和載入/載出模組16之間的第二閘閥機構15(TLGV)是可滑動地位於第三暫存機構64處或位於第四暫存機構66處。當第二閘閥機構15滑動至第三暫存機構64處時,第四暫存機構66所在的空間60可和傳送模組14相通;反之,則傳送模組14可將頂棚24或承載盤26傳送於載入/載出模組16和反應模組12之間或是載入/載出模組16和傳送模組14之間。 FIG. 2 is a schematic side view of an embodiment of a configuration and transmission method of part of an epitaxial process machine performing face up according to one embodiment of the present invention. Please refer to FIG. 1 and FIG. 2 at the same time. Next, the transmission module 14 further includes a first temporary storage mechanism 44 (stage) and a second temporary storage mechanism 46, and the loading / unloading module 16 further includes a third A temporary storage mechanism 64 and a fourth temporary storage mechanism 66. In one embodiment, a first gate valve mechanism 13 (RTGV) is disposed between the reaction module 12 and the transfer module 14, and a second gate valve mechanism 15 (TLGV) is disposed between the transfer module 14 and the loading / unloading Between the modules 16, a third gate valve mechanism 17 (LAGV) is disposed between the loading / unloading module 16 and an outside. Furthermore, in an embodiment, the first temporary storage mechanism 44 may be used for placing a carrier disk in a complete epitaxial process (including conveying objects, raising and lowering temperature before and after the epitaxial growth and reaction). The second temporary storage mechanism 46 can be used for placing the ceiling 24. Secondly, both the third temporary storage mechanism 64 and the fourth temporary storage mechanism 66 can be used for placing the carrying tray 26 or the ceiling 24, respectively. Among them, the fourth temporary storage mechanism 66 is placed in the loading / The space 60 below the cavity 62 is carried out, and the nitrogen cycle of this space 60 can be together with the transfer module 14. Furthermore, the second gate valve mechanism 15 (TLGV) between the transfer module 14 and the loading / unloading module 16 is slidably located at the third temporary storage mechanism 64 or at the fourth temporary storage mechanism 66 . When the second gate valve mechanism 15 slides to the third temporary storage mechanism 64, the space 60 where the fourth temporary storage mechanism 66 is located can communicate with the transfer module 14; otherwise, the transfer module 14 can connect the ceiling 24 or the carrying tray 26 It is transmitted between the loading / unloading module 16 and the reaction module 12 or between the loading / unloading module 16 and the transmission module 14.
請同時參照圖1、圖2,為方便說明,於反應模組12處以位置23(R1)和位置25(R2)分別表示承載盤和頂棚容置於反應腔體22中時的位置。於面朝上的磊晶製程情形時,承載基板晶圓的承載盤可由外界通過第三閘閥機構17(LAGV)放置於載入/載出模組16的閒置中的第三暫存機構64或進而再被移至閒置中的第四暫存機構66,乾淨的頂棚亦可放置於載入/載出模組16的閒置中的第三暫存機構64或進而再被移至閒置中的第四暫存機構66以準備進行磊晶成長。可以理解的,由外界送入磊晶製程機台2中的承載盤和頂棚的先後次序是可以對調的。 Please refer to FIG. 1 and FIG. 2 at the same time. For convenience of explanation, positions 23 (R1) and 25 (R2) at the reaction module 12 respectively indicate the positions of the bearing tray and the ceiling when they are placed in the reaction chamber 22. In the case of an epitaxial process facing upwards, the carrier tray carrying the substrate wafer can be placed by the outside through the third gate valve mechanism 17 (LAGV) in the third temporary storage mechanism 64 of the loading / unloading module 16 or It is then moved to the fourth temporary storage mechanism 66 that is idle, and the clean ceiling can also be placed in the third temporary storage mechanism 64 that is idle in the loading / unloading module 16 or further moved to the idle first Four temporary storage mechanisms 66 are prepared for epitaxial growth. It can be understood that the order of the loading tray and the ceiling sent into the epitaxial process machine 2 from the outside can be reversed.
續參照圖1、圖2,通過第二閘閥機構15(TLGV)和第一閘閥機構13(RTGV)後,傳送模組14的機械手臂48可將載入/載出模組16處的承載盤和頂棚分別挪移入反應模組12處,其中,承載盤26被安裝在公轉盤上,此時的公轉盤在位置23(R1)處,頂棚24則安裝在位置25(R2)。其中,位置25(R2)是在反應腔體22的上腔底部附近,頂棚24在承載盤26的上方,即位置25(R2)在位置23(R1)的上方。關閉第一閘閥機構13(RTGV)後以啟動磊晶成長,一般而言,承載盤26中的基板晶圓和頂棚24在高溫與真空氛圍下進行磊晶成長的沉積反應以成長磊晶層,成長時間約需6小時才能成長到所需的磊晶層厚度。 Continuing to refer to FIGS. 1 and 2, after passing through the second gate valve mechanism 15 (TLGV) and the first gate valve mechanism 13 (RTGV), the robot arm 48 of the transfer module 14 can load / unload the load tray at the module 16 The ceiling and the ceiling are moved into the reaction module 12, respectively. Among them, the carrying tray 26 is installed on the male rotary table. At this time, the male rotary table is at the position 23 (R1), and the ceiling 24 is installed at the position 25 (R2). Among them, the position 25 (R2) is near the bottom of the upper cavity of the reaction chamber 22, and the ceiling 24 is above the carrying tray 26, that is, the position 25 (R2) is above the position 23 (R1). After the first gate valve mechanism 13 (RTGV) is closed to start epitaxial growth, in general, the substrate wafer and the ceiling 24 in the carrier tray 26 perform an epitaxial growth deposition reaction under a high temperature and vacuum atmosphere to grow an epitaxial layer. It takes about 6 hours to grow to the desired epitaxial layer thickness.
續參考圖1和圖2,承上,當承載基板晶圓的承載盤和乾淨的頂棚被挪入反應腔體22後,承載有次一批待進行反應的基板晶圓的承載盤以及次一個頂棚可被放置於閒置中的第四暫存機構66或第三暫存機構64中以備。可以選擇地,放置於載入/載出模組16處的次一批承載盤可進一步被移入閒置中的傳送模組14的第一暫存機構44上以備,次一個頂棚則可被移入第二暫存機構46以備。是以,當反應模組12中有基板晶圓在進行磊晶成長時,次一批的承載盤和乾淨的頂棚可以被放置於閒置中的傳送模組14或閒置中的載入/載出模組16中, 即本發明的傳送模組14和載入/載出模組16分別具有兩個暫存機構以放置次一批的承載盤和乾淨的頂棚。如此的優點之一在於,在反應模組12在進行磊晶成長的期間,次一批的承載盤和乾淨的頂棚能夠在磊晶製程機台2中備妥以待直接被移入反應模組12中。 Continuing to refer to FIG. 1 and FIG. 2, when the carrier tray carrying the substrate wafer and the clean ceiling are moved into the reaction chamber 22, the carrier tray carrying the next batch of substrate wafers to be reacted and the next The ceiling can be placed in the fourth temporary storage mechanism 66 or the third temporary storage mechanism 64 which is idle. Alternatively, the next batch of trays placed at the loading / unloading module 16 can be further moved to the first temporary storage mechanism 44 of the idle transfer module 14 for preparation, and the next ceiling can be moved into The second temporary storage mechanism 46 is prepared. Therefore, when substrate wafers are undergoing epitaxial growth in the reaction module 12, the next batch of carrier disks and clean ceilings can be placed in the idle transfer module 14 or in idle loading / unloading. In module 16, That is, the transfer module 14 and the loading / unloading module 16 of the present invention respectively have two temporary storage mechanisms for placing the next batch of load trays and a clean ceiling. One of the advantages is that during the epitaxial growth of the reaction module 12, the next batch of load trays and clean ceilings can be prepared in the epitaxial process machine 2 to be directly transferred into the reaction module 12. in.
續參考圖1和圖2,承上,在次一批待進行反應的晶圓的承載盤以及次一個頂棚被放置於載入/載出模組16中的情況時,通過第一閘閥機構13(RTGV)、傳送模組14的機械手臂48可將承載磊晶晶圓的承載盤26從反應模組12移入閒置中的第一暫存機構44,磊晶成長使用過的頂棚24則可停留於反應模組12中或是被移入閒置中的第二暫存機構46以進行吹淨和降溫或待移出磊晶製程機台2。接著,傳送模組14再將載入/載出模組16中的次一批承載基板晶圓的承載盤以及次一個頂棚移入清空的反應模組12中以開始次一批基板晶圓的磊晶成長。依據上述,在反應模組12進行磊晶成長的期間,承載磊晶晶圓的承載盤26可由第一暫存機構44被移至閒置中的第三暫存機構64或第四暫存機構66以待移出。同理,磊晶成長使用過的頂棚24亦可由第二暫存機構46被移至閒置中的第四暫存機構66或第三暫存機構64以待移出。是以,承載晶圓的承載盤可在磊晶製程機台2中分別自動被傳送而不會產生彼此等待傳送的時間,承載盤和頂棚可在反應模組12、傳送模組14和載入/載出模組16之間循環地被交換,減少磊晶製程機台2停機,增加其使用效率。 Continuing to refer to FIG. 1 and FIG. 2, it is assumed that the first gate valve mechanism 13 is adopted when the carrier tray of the next batch of wafers to be reacted and the next ceiling are placed in the loading / unloading module 16. (RTGV), the robotic arm 48 of the transfer module 14 can move the carrier disk 26 carrying the epitaxial wafer from the reaction module 12 to the idle first temporary storage mechanism 44, and the ceiling 24 used by the epitaxial growth can stay The second temporary storage mechanism 46 in the reaction module 12 or is moved into an idle state for blowing and cooling or to be removed from the epitaxial process machine 2. Next, the transfer module 14 moves the next batch of substrate trays and substrates in the load / unload module 16 into the empty reaction module 12 to start the second batch of substrate wafers. Crystal growth. According to the above, during the epitaxial growth of the reaction module 12, the carrier disk 26 carrying the epitaxial wafer can be moved from the first temporary storage mechanism 44 to the idle third temporary storage mechanism 64 or the fourth temporary storage mechanism 66. Pending removal. Similarly, the ceiling 24 used by Epistar can also be moved from the second temporary storage mechanism 46 to the idle fourth temporary storage mechanism 66 or the third temporary storage mechanism 64 for removal. Therefore, the carrier discs carrying wafers can be automatically transferred in the epitaxial process machine 2 without generating waiting time for each other. The carrier discs and the ceiling can be loaded in the reaction module 12, the transport module 14, and the loading / The load-out modules 16 are exchanged cyclically, which reduces the shutdown of the epitaxial process machine 2 and increases its use efficiency.
續參考圖1和圖2,可以理解的,在次一批待進行磊晶成長的承載盤和次一個頂棚被放置於第一暫存機構44和第二暫存機構46的情況時,承載磊晶晶圓的承載盤26和使用過的頂棚24可從反應模組12被移入閒置中的載入/載出 模組16中,二者在經過氮氣吹淨和降溫後可直接由載入/載出模組16移出磊晶製程機台2。 Continuing to refer to FIG. 1 and FIG. 2, it can be understood that when the next batch of load trays and the next ceiling to be epitaxially grown are placed in the first temporary storage mechanism 44 and the second temporary storage mechanism 46, The wafer carrier plate 26 and the used ceiling 24 can be moved from the reaction module 12 into the idle loading / unloading In the module 16, after being purged with nitrogen and cooled, the epitaxial process machine 2 can be directly removed from the loading / unloading module 16.
圖3為本發明之一磊晶製程機台面朝下(face down)實施例的側面示意圖,圖4為本發明之磊晶製程機台執行面朝下(face up)的部分機構的配置和傳送方式實施例的側視示意圖。和圖1、圖2不同之處在於,在反應模組12中,公轉盤所在位置23(R1)是在頂棚24所在位置25(R2)的上方,即承載盤26在頂棚24的上方,頂棚24在反應腔體22的下腔附近。此情形的磊晶製程過程仍可善用本發明之分別具有二個暫存機構的傳送模組14和載入/載出模組16,執行如同面朝上製程的承載盤26和頂棚24的循環交換的自動傳送方式,於此不贅述。 FIG. 3 is a schematic side view of an embodiment of an epitaxial process machine face down according to the present invention, and FIG. 4 is a configuration and a part of a mechanism for performing an face up process of an epitaxial process machine of the present invention. A schematic side view of a transmission mode embodiment. The difference from FIG. 1 and FIG. 2 is that in the reaction module 12, the position 23 (R1) of the orbiting disk is above the position 25 (R2) of the ceiling 24, that is, the carrying tray 26 is above the ceiling 24, and the ceiling 24 is near the lower cavity of the reaction chamber 22. In this case, the epitaxial process can still make good use of the transfer module 14 and the loading / unloading module 16 of the present invention, which have two temporary storage mechanisms, and perform the same process as the loading tray 26 and the ceiling 24 of the upward facing process The automatic transmission method of cyclic exchange is not repeated here.
圖5A~圖5C為本發明之傳送模組、部分的閘閥機構和暫存機構的配置俯視圖,當第一暫存機構44和第二暫存機構46皆為固定式時,如圖5A,第一暫存機構44和第二暫存機構46為上下層、重疊或對齊的位置關係,二者皆在傳送模組的氮氣盒的同一角落,例如與第一閘閥機構13同側的同一角落處。如圖5B,第一暫存機構44和第二暫存機構46亦為上下層的位置關係,但二者在傳送模組的氮氣盒的同一邊,例如與第一閘閥機構13或第二閘閥機構15不同側的邊界上。如圖5C,第一暫存機構44和第二暫存機構46為上下層但非重疊/非對齊的位置關係,例如第一暫存機構44設在鄰近第一閘閥機構13的角落上,且第二暫存機構46設在鄰近第二閘閥機構15的角落上,反之亦可。 5A-5C are top views of the configuration of the transfer module, part of the gate valve mechanism, and the temporary storage mechanism of the present invention. When the first temporary storage mechanism 44 and the second temporary storage mechanism 46 are fixed, as shown in FIG. 5A, the first A temporary storage mechanism 44 and a second temporary storage mechanism 46 are in the upper, lower, overlapping or aligned positional relationship, both of which are at the same corner of the nitrogen box of the transfer module, for example, at the same corner as the first gate valve mechanism 13 . As shown in FIG. 5B, the first temporary storage mechanism 44 and the second temporary storage mechanism 46 are also in the upper and lower positions, but they are on the same side of the nitrogen box of the transfer module, for example, with the first gate valve mechanism 13 or the second gate valve. On the border of different sides of the mechanism 15. As shown in FIG. 5C, the first temporary storage mechanism 44 and the second temporary storage mechanism 46 are in an upper-level but non-overlapping / non-aligned positional relationship. For example, the first temporary storage mechanism 44 is disposed at a corner adjacent to the first gate valve mechanism 13, and The second temporary storage mechanism 46 is provided on a corner adjacent to the second gate valve mechanism 15 and vice versa.
再者,要說明的是,可以選擇地,傳送模組14的二個暫存機構亦可以是可動式的(參考圖1),利用可上升下降的夾取機構49(圖1)夾取頂棚及承載盤。在二暫存機構為上下層、重疊或對齊的位置關係的情況下,上層夾取機構 是夾取承載盤,下層夾取機構是夾取頂棚。在二暫存機構為上下層但非重疊/非對齊的位置關係的情況下,則不限何者是夾取承載盤。 Furthermore, it should be noted that, optionally, the two temporary storage mechanisms of the transmission module 14 may also be movable (refer to FIG. 1), and the ceiling can be clamped by a clamping mechanism 49 (FIG. 1) that can be raised and lowered. And carrying tray. In the case where the two temporary storage mechanisms are in the upper, lower, overlapping or aligned positional relationship, the upper clamping mechanism It is a gripping tray, and the lower gripping mechanism is a gripping ceiling. In the case where the two temporary storage mechanisms are in the upper and lower layers but in a non-overlapping / non-aligned positional relationship, it is not limited to which of the holding disks is clamped.
圖6A為本發明之一載入/載出模組放置承載盤的立體側前視示意圖,圖6B為本發明之一載入/載出模組放置承載盤的另一立體側前視示意圖,圖6C為本發明之一載入/載出模組放置匣部件的前視示意圖,圖6D為本發明之一載入/載出模組的部分結構的另一立體前視示意圖。請參考圖6A~6D,於此實施例中,載入/載出模組16為一氮氣盒設計,在氮氣盒的中空腔體中設有第三暫存機構64,其中,第三暫存機構64包括一滑台63,滑台63上可放置一匣部件20(cassette)、承載盤26或頂棚24(見圖1或圖4)。其次,載入/載出模組16可以具有可上開啟的上蓋61,以方便使用者直接開啟載入/載出模組16並進行匣部件20的上下貨(load/unload)。再者,滑台63上的四角落各設有銷67(pin)以設置滑台63上的載有晶圓27的承載盤26。又,滑台63的基台68上設有一凹槽65,其中,凹槽65的凹陷深度可和第三閘閥機構17(見圖3)的開口大小配合,以便將匣部件20置於凹槽65上並直接滑入載入/載出腔體62中。另,基台68可藉由齒輪19而被帶動旋轉/定位。是以,本發明的磊晶製程機台2的優點之一是,載入/載出模組16的設計有利於分別進行匣部件20、承載盤26或頂棚24的上下貨、裝載/卸載以及充吹程序(pump/purge)的進行。舉例來說,承載基板晶圓的承載盤可放入匣部件中儲放,此匣部件可被放置在滑台的凹槽中後直接被推入載入/載出腔體內,關閉閘閥機構後即可對載入/載出腔體進行氮氣充吹程序;氮氣充吹程序結束後可開啟載入/載出腔體上方的上蓋,由載入/載出腔體的上方將匣部件取出並移至載入/載出腔體旁的左右兩側高架子之一中。 FIG. 6A is a schematic front view of a three-dimensional side of a loading / unloading module placing a carrier disk, FIG. 6B is a schematic front view of another three-dimensional side of a loading / unloading module placing a carrier disk, FIG. FIG. 6C is a schematic front view of a loading / unloading module placement box component of the present invention, and FIG. 6D is another three-dimensional schematic front view of a partial structure of a loading / unloading module of the present invention. Please refer to FIGS. 6A to 6D. In this embodiment, the loading / unloading module 16 is a nitrogen box design, and a third temporary storage mechanism 64 is provided in the hollow cavity of the nitrogen box. The mechanism 64 includes a slide table 63 on which a cassette 20, a tray 26 or a ceiling 24 can be placed (see FIG. 1 or FIG. 4). Secondly, the loading / unloading module 16 may have an upper cover 61 that can be opened and opened, so as to facilitate the user to directly open the loading / unloading module 16 and load / unload the box component 20. Furthermore, pins 67 (pins) are provided on the four corners of the slide table 63 to set the carrier tray 26 on which the wafer 27 is carried on the slide table 63. In addition, the base 68 of the sliding table 63 is provided with a groove 65, wherein the depth of the recess of the groove 65 can be matched with the opening size of the third gate valve mechanism 17 (see FIG. 3) so as to place the box member 20 in the groove 65 and slide directly into the loading / unloading cavity 62. In addition, the base 68 can be rotated / positioned by the gear 19. Therefore, one of the advantages of the epitaxial process machine 2 of the present invention is that the design of the loading / unloading module 16 facilitates the loading and unloading, loading / unloading, and loading / unloading of the box component 20, the carrier tray 26, or the ceiling 24, respectively. The charge / purge procedure is performed. For example, the carrier disk carrying the substrate wafer can be stored in a box component, which can be placed in the groove of the slide table and then directly pushed into the loading / unloading cavity. After closing the gate valve mechanism, The nitrogen filling and blowing process can be performed on the loading / loading cavity; after the nitrogen filling and blowing process is completed, the upper cover of the loading / loading cavity can be opened, and the box component can be taken out from the loading / loading cavity and Move to one of the left and right high shelves next to the loading / unloading cavity.
圖7A為本發明之設置歸位機構的俯視示意圖,圖7B為本發明之歸位機構的立體側視示意圖,圖7C為本發明之設置歸位機構的側視示意圖。請參考圖7A~圖7C,本發明於反應模組12和載入/載出模組16皆可設置歸位機構21來校準承載盤。於一實施例中,承載盤26和其周邊的機構的設計可和歸位機構21搭配以進行承載盤26的位置校準。於此實施例中,一歸位機構21具有一感測器29,在承載盤26被送入反應模組12並設置於公轉盤上時,歸位機構21的感測器29可以搭配承載盤26以執行歸位校準。又,歸位機構21更包括作動部件39(gear member)以因應需要轉動或帶動感測器29或歸位機構21本身。於此實施例中,感測器29可以是光遮斷器、反射式感測器或其他非接觸式感測器,作動部件39可以是齒輪組件或其他適合的轉動或帶動件。 FIG. 7A is a schematic top view of the positioning mechanism of the present invention, FIG. 7B is a schematic three-dimensional side view of the positioning mechanism of the present invention, and FIG. 7C is a schematic side view of the positioning mechanism of the present invention. Please refer to FIG. 7A to FIG. 7C. In the present invention, a positioning mechanism 21 can be provided on both the reaction module 12 and the loading / unloading module 16 to calibrate the loading plate. In one embodiment, the design of the carrier plate 26 and its surroundings can be matched with the return mechanism 21 to perform the position calibration of the carrier plate 26. In this embodiment, a home mechanism 21 has a sensor 29. When the carrier disk 26 is sent into the reaction module 12 and is set on the common turntable, the sensor 29 of the home mechanism 21 can be used with the carrier disk. 26 to perform home calibration. In addition, the return mechanism 21 further includes a gear member 39 (gear member) to rotate or drive the sensor 29 or the return mechanism 21 itself as needed. In this embodiment, the sensor 29 may be a photo interrupter, a reflective sensor or other non-contact sensor, and the actuating member 39 may be a gear assembly or other suitable rotating or driving members.
圖8為本發明之載入/載出模組設置歸位機構的部分立體後視示意圖。請參考圖8,本發明的載入/載出模組16亦可設置一或多的歸位機構。舉例來說,於載入/載出模組16的適當位置設置承載盤的旋轉感測器71和滑台推入定位的滑台推入定位感測器69。滑台63下方設有直齒輪73(spur gear)以轉動滑台63,進而轉動滑台63上承載的承載盤或頂棚以進行定向。是以,在本發明的反應模組12和載入/載出模組16皆設有歸位機構的情況下,得以進行承載盤和頂棚的定向(orientation)以相互校正。如此一來,當承載盤和頂棚被傳送模組14在載入/載出模組16和反應模組12之間傳送時,透過歸位機構可以確保二者的位置定向。一旦有誤差產生時,載入/載出模組16和反應模組12二者之一可以先進行歸位校正,再將此歸位校正信號傳遞至二者的另一,藉以確保二者中的承載盤和頂棚的位置正確。 FIG. 8 is a schematic partial rear view of the loading / unloading module provided with a homing mechanism according to the present invention. Please refer to FIG. 8, the loading / unloading module 16 of the present invention may also be provided with one or more homing mechanisms. For example, the rotation sensor 71 of the loading tray and the slide-in positioning sensor 69 of the slide-in positioning are provided at appropriate positions of the loading / unloading module 16. A spur gear 73 is provided below the slide table 63 to rotate the slide table 63, and then rotate a bearing plate or a ceiling carried on the slide table 63 for orientation. Therefore, in the case where the reaction module 12 and the loading / unloading module 16 of the present invention are both provided with a return mechanism, the orientation of the carrying tray and the ceiling can be corrected to each other. In this way, when the carrier tray and the ceiling are transferred between the loading / unloading module 16 and the reaction module 12 by the transfer module 14, the positioning of the two can be ensured through the return mechanism. Once an error occurs, one of the loading / unloading module 16 and the reaction module 12 can be home-corrected first, and then the home-correction signal is transmitted to the other of the two to ensure that The load tray and ceiling are positioned correctly.
圖9為本發明之一自動傳送方法實施例的步驟示意圖。參考圖9,本發明的自動傳送方法可於可連通和隔絕的一載入/載出腔體、一傳送模組和一反應腔體中執行和運作。本發明的特徵之一在於,傳送模組提供了第一和第二暫存機構(步驟51)、在載入/載出腔體中提供了第三暫存機構(步驟52)、以及在載入/載出腔體下方的空間中提供了第四暫存機構(步驟53)。其中,載入/載出腔體下方的空間和傳送模組相通,其氮氣循環可和傳送模組一起。在反應腔體中、可對一承載盤(第一承載盤)中的基板晶圓(第一晶圓)進行磊晶成長反應,一般磊晶成長反應中有一頂棚(第一頂棚)和承載盤搭配以進行磊晶成長反應(步驟54)。另外,等待進行磊晶成長反應的另一基板晶圓被第二承載盤承載,其中,第二承載盤可被放置於閒置中的第三暫存機構、第四暫存機構和第一暫存機構三者之一(步驟55)。在第二承載盤被放置於該第三或該第四暫存機構的情況時,完成該磊晶反應、承載有磊晶晶圓的承載盤(第一承載盤)由反應腔體中被傳送至第一暫存機構以進行降溫,然後第二承載盤被傳送模組傳送至反應腔體中以進行磊晶成長反應(步驟56)。若第二承載盤被放置於該第一暫存機構的情況時,承載有磊晶晶圓的第一承載盤由反應腔體中被傳送至第三暫存機構或第四暫存機構以進行降溫,然後傳送第二承載盤至反應腔體中以進行磊晶反應(步驟57)。 FIG. 9 is a schematic diagram of steps of an embodiment of an automatic transmission method according to the present invention. Referring to FIG. 9, the automatic transfer method of the present invention can be executed and operated in a loading / unloading cavity, a transfer module, and a reaction cavity which can be connected and isolated. One of the features of the present invention is that the transfer module provides first and second temporary storage mechanisms (step 51), a third temporary storage mechanism is provided in the loading / unloading cavity (step 52), and the on-loading A fourth temporary storage mechanism is provided in the space below the loading / unloading cavity (step 53). The space under the loading / unloading cavity is in communication with the transfer module, and the nitrogen cycle can be together with the transfer module. In the reaction chamber, an epitaxial growth reaction can be performed on a substrate wafer (first wafer) in a carrier tray (first carrier tray). Generally, there is a ceiling (first ceiling) and a carrier tray in the epitaxial growth reaction. Match to perform epitaxial growth reaction (step 54). In addition, another substrate wafer waiting for the epitaxial growth reaction is carried by the second carrier disk, where the second carrier disk can be placed in the idle third temporary storage mechanism, the fourth temporary storage mechanism, and the first temporary storage. One of the three institutions (step 55). When the second carrier disk is placed in the third or the fourth temporary storage mechanism, the carrier disk (the first carrier disk) carrying the epitaxial reaction and carrying the epitaxial wafer is transferred from the reaction chamber. Go to the first temporary storage mechanism to cool down, and then the second carrier tray is transferred to the reaction chamber by the transfer module for epitaxial growth reaction (step 56). If the second carrier tray is placed in the first temporary storage mechanism, the first carrier disk carrying the epitaxial wafer is transferred from the reaction chamber to the third temporary storage mechanism or the fourth temporary storage mechanism for processing. The temperature is lowered, and then a second carrier tray is transferred into the reaction chamber to perform an epitaxial reaction (step 57).
呈稍早段落中所述,在第二承載盤被放置於第三暫存機構或第四暫存機構的情況時,乾淨的頂棚(第二頂棚)可以放置於閒置中的第三暫存機構或第四暫存機構,待使用過的第一頂棚由反應腔體傳送至閒置中的第二暫存機構以進行降溫時,第二頂棚可被傳送至反應腔體中。另,執行磊晶晶圓和其承載盤或更包括使用過的頂棚的降溫步驟是在以氮氣吹淨的氮氣氛圍下進行。 As mentioned in the earlier paragraph, in the case where the second carrier tray is placed in the third temporary storage mechanism or the fourth temporary storage mechanism, the clean ceiling (second ceiling) can be placed in the idle third temporary storage mechanism Or the fourth temporary storage mechanism, when the first ceiling to be used is transferred from the reaction chamber to the idle second temporary storage mechanism for cooling, the second ceiling may be transferred to the reaction chamber. In addition, the cooling step of performing the epitaxial wafer and its carrier tray or more including the used ceiling is performed under a nitrogen atmosphere purged with nitrogen.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.
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