TWI664690B - Epitaxy processing system with automatic transfer system and automatically transferring method thereof - Google Patents

Abstract

An epitaxial process system provides a reaction module, a transfer module, and a load / unload module. The transfer module and the load / unload module each have two temporary storage mechanisms for placing wafers without epitaxial reactions. The loading tray is moved from one of the two temporary storage mechanisms of the loading / unloading module or a temporary storage mechanism of the transfer module to the reaction chamber of the reaction module to perform epitaxial reaction with the ceiling. The module automatically transfers the carrier tray and the ceiling between the reaction module, the transmission module and the loading / unloading module.

Description

Epicrystalline process system with automatic transfer system and automatic transfer method thereof

The invention relates to the field of an epitaxial formation device, in particular to an epitaxial glove box device and an automatic transfer method thereof.

A general epitaxial process machine includes a reaction module, a transfer module, and a load / unload module. The wafer can be transferred between the reaction module and the load / unload module by the transfer module. Since the epitaxial growth reaction time is long and it needs to go through a gradual temperature reduction process to avoid damaging the epitaxial layer, how to balance the reduction of machine downtime and wafer epitaxial quality is one of the important issues in the epitaxial process.

The invention provides an epitaxial process system and an automatic transmission method thereof, which uses only three modules to form a system architecture with an automatic transmission function. It solves the conventional design that requires an additional temporary storage module to reduce the occupation. Footprint and reduce the cost of machine equipment.

The invention provides an epitaxial process system and an automatic transmission method thereof, which respectively set two temporary storage spaces at a transfer module (TM) and a load lock module (LLM), that is, Cyclic exchange of the carrier and ceiling can be performed in the epitaxial process machine to reduce machine downtime and increase machine efficiency.

The invention provides an epitaxial process system and an automatic transmission method thereof. It uses only three modules to form an automatic transmission function. A return mechanism is provided in the module to perform mutual positioning and calibration between the modules, thereby increasing the number of machines. Accuracy during operation.

According to the above, an epitaxial process system includes: a reaction module (RM) including a reaction chamber, a susceptor and a ceiling housed in the reaction chamber to assist the carrier At least one wafer undergoes an epitaxial reaction; a transfer module (TM) includes a first stage storage mechanism (T2) and a second stage storage mechanism (T1), wherein the first A temporary storage mechanism is provided for placing the carrier disk, the second temporary storage mechanism is provided for placing the ceiling; a loading / unloading module (LLM), including a loading / unloading cavity and a A third temporary storage mechanism (L2) is accommodated in the loading / unloading cavity, and the third temporary storage mechanism is provided for placing the carrier tray or the ceiling; and a fourth temporary storage mechanism (L1) is placed The loading / unloading cavity is provided below the loading tray or the ceiling; wherein the loading tray for placing the wafer without epitaxial reaction is provided by the third temporary storage mechanism, the fourth One of the three temporary storage mechanisms and the first temporary storage mechanism was moved to the reaction chamber.

According to the above, an automatic transfer method, which operates in a loading / unloading cavity, a transfer module, and a reaction cavity, which can be connected and isolated, includes: providing a first temporary storage mechanism in the transfer module. (stage) (T2) and a second temporary storage mechanism (T1); a third temporary storage mechanism (L2) provided in the loading / loading cavity; provided under the loading / loading cavity A fourth temporary storage mechanism (L1) in a space, the space is in communication with the transfer module; an epitaxial reaction is performed on a first wafer in the reaction chamber, and the first wafer is placed in a In the first carrier tray, a first ceiling cooperates with the first carrier tray during the epitaxial reaction; a second carrier tray having a second wafer is provided, and the second carrier tray is placed in an idle state. One of the third temporary storage mechanism, the fourth temporary storage mechanism, and the first temporary storage mechanism to wait for the epitaxial reaction; and transmitting the first carrier disk and the second carrier disk in the second The carrier tray is put When placed in the third or the fourth temporary storage mechanism, the first carrier tray that completes the epitaxial reaction is transferred from the reaction chamber to the first temporary storage mechanism for cooling, and then the first Two carrier disks are inserted into the reaction chamber to perform the epitaxial reaction. When the second carrier disk is placed in the first temporary storage mechanism, the first carrier disk that completes the epitaxial reaction is provided by the reaction chamber. The body is transferred to the third temporary storage mechanism or the fourth temporary storage mechanism to cool down, and then the second carrier tray is transferred to the reaction chamber to perform the epitaxial reaction.

2‧‧‧Epistar Process Machine

12‧‧‧Reaction Module

13‧‧‧The first gate valve mechanism

14‧‧‧Transfer Module

15‧‧‧Second gate valve mechanism

16‧‧‧Load / Unload Module

17‧‧‧The third gate valve mechanism

19‧‧‧ Gear

20‧‧‧box parts

21‧‧‧ Homing Agency

22‧‧‧ reaction chamber

23‧‧‧Location

24‧‧‧ ceiling

25‧‧‧Location

26‧‧‧carriage tray

27‧‧‧ wafer

29‧‧‧Sensor

39‧‧‧ Actuating parts

44‧‧‧The first temporary storage institution

46‧‧‧Second temporary storage institution

48‧‧‧ robotic arm

49‧‧‧Clamping mechanism

51, 52, 53, 54, 55, 56, 57‧‧‧ steps

60‧‧‧ space

61‧‧‧ Upper cover

62‧‧‧Load in / out cavity

63‧‧‧Slide

64‧‧‧Third temporary storage institution

65‧‧‧Groove

66‧‧‧Fourth temporary storage institution

67‧‧‧pin

68‧‧‧ abutment

69‧‧‧Slide into the positioning sensor

71‧‧‧rotation sensor

73‧‧‧ spur gear

FIG. 1 is a schematic side view of part of a mechanism / component position of an embodiment of an epitaxial process machine according to the present invention.

FIG. 2 is a schematic side view of an embodiment of a configuration and transmission method of part of an epitaxial process machine performing face up according to one embodiment of the present invention.

FIG. 3 is a schematic side view of an embodiment of an epitaxial process machine face down according to the present invention.

FIG. 4 is a schematic side view of a portion of a mechanism / component performing a face-up of an epitaxial process machine according to the present invention.

FIG. 5A is a top view of the configuration of the first embodiment of the transfer module, part of the gate valve mechanism and the temporary storage mechanism of the present invention.

FIG. 5B is a top view of the configuration of the second embodiment of the transfer module, part of the gate valve mechanism and the temporary storage mechanism of the present invention.

FIG. 5C is a top view of the configuration of the third embodiment of the transfer module, part of the gate valve mechanism and the temporary storage mechanism of the present invention.

FIG. 6A is a schematic perspective front view of a part of a structure of a loading / unloading module according to the present invention. FIG.

FIG. 6B is another schematic front perspective view of another part of the structure of a loading / unloading module of the present invention.

FIG. 6C is a schematic front view of a part of a structure of a loading / unloading module and a component for placing a cassette according to the present invention.

FIG. 6D is another schematic three-dimensional front view of a partial structure of a loading / unloading module according to the present invention.

FIG. 7A is a schematic top view of a positioning mechanism according to the present invention.

FIG. 7B is a schematic three-dimensional side view of the homing mechanism of the present invention.

FIG. 7C is a schematic side view of a positioning mechanism provided in the reaction module of the present invention.

FIG. 8 is a schematic partial rear view of the loading / unloading module provided with a homing mechanism according to the present invention.

FIG. 9 is a schematic diagram of steps of an embodiment of an automatic transmission method according to the present invention.

The epitaxial process system hereinafter referred to in the present invention is mainly an epitaxial process device including a glove box device. The glove box equipment of the epitaxial process equipment generally includes the gas piping system and control system. Although it is not shown on the figure and explained here, it is understandable that the actual need for the epitaxial process equipment will be included in the machine. system.

In addition, the temporary storage mechanism hereinafter referred to in the present invention may include one or more bases for placing objects, or one or more gripping mechanisms for fixing objects, or a carrying mechanism for placing objects. Among them, The objects here are carrier trays or ceilings. In order to protect the placed or gripped objects, the base or gripping mechanism may be a device made of ceramic or stone-grinding material, or a ceramic or stone-grinding element may be provided at a position where the temporary storage mechanism contacts or bears on the object. For example, the base is made of a metal material, but ceramic or stone grinding parts are provided on the edge of the base to support the object.

In addition, an epitaxy wafer (hereinafter referred to as an epitaxy wafer) refers to one or more epitaxial layers grown on a substrate wafer through a suitable method such as chemical vapor deposition. Therefore, in the present invention, the difference between the substrate wafer and the epitaxial wafer refers to the objects before and after the epitaxial growth. Unless otherwise mentioned, the following wafers may be substrate wafers or epitaxial wafers or both.

FIG. 1 is a schematic side view of part of a mechanism / component position of an embodiment of an epitaxial process machine according to the present invention. Referring to FIG. 1, the epitaxial process machine 2 of the present invention includes three modules: a reaction module 12 (reaction module, RM), a transfer module 14 (TM), and a loading / unloading module 16 (LLM). The reaction module 12 is a place for providing epitaxial growth of wafers and related mechanisms. Among them, one or more ceilings 24 and one or more carrier trays 26 may be arranged in the reaction chamber 22 of the reaction module 12. One or more wafers (not shown in the figure) can be accommodated in each carrier tray 26, and the wafers (substrate wafers) that have not been epitaxially grown can undergo epitaxial growth epitaxial reactions in the reaction module 12. . The loading / unloading module 16 is a place and related mechanism for preparing a wafer (substrate wafer) without epitaxial growth and unloading a wafer (epitaxial wafer) that has completed an epitaxial process, and transfers the module 14 It is the place and related institutions that provide the transfer of wafers and related objects. Therefore, the transmission module 14 is usually disposed between the reaction module 12 and the loading / unloading module 16. Secondly, the reaction module 12, the transmission module 14, and the loading / unloading module 16 in the broad sense of the present invention respectively occupy a space of their respective length, width, and height and may further include a cavity. The cavities can fill up or be smaller than the space occupied by each, and a module mechanism can be set or placed inside. When the respective cavities are smaller than the respective occupied spaces, other mechanisms may be provided or planned for the remaining part of the occupied spaces. In one embodiment, the reaction module 12 includes a reaction cavity 22 for loading / unloading the mold. The group 16 includes a loading / unloading cavity 62. Secondly, the reaction module 12, the transfer module 14, and the loading / unloading module 16 that can be referred to in the present invention can also be designed for nitrogen boxes, and a gate valve mechanism can be set between the nitrogen boxes to serve as a gas Connected channels or / and gas-isolated channels and / or object-passed // isolated channels.

FIG. 2 is a schematic side view of an embodiment of a configuration and transmission method of part of an epitaxial process machine performing face up according to one embodiment of the present invention. Please refer to FIG. 1 and FIG. 2 at the same time. Next, the transmission module 14 further includes a first temporary storage mechanism 44 (stage) and a second temporary storage mechanism 46, and the loading / unloading module 16 further includes a third A temporary storage mechanism 64 and a fourth temporary storage mechanism 66. In one embodiment, a first gate valve mechanism 13 (RTGV) is disposed between the reaction module 12 and the transfer module 14, and a second gate valve mechanism 15 (TLGV) is disposed between the transfer module 14 and the loading / unloading Between the modules 16, a third gate valve mechanism 17 (LAGV) is disposed between the loading / unloading module 16 and an outside. Furthermore, in an embodiment, the first temporary storage mechanism 44 may be used for placing a carrier disk in a complete epitaxial process (including conveying objects, raising and lowering temperature before and after the epitaxial growth and reaction). The second temporary storage mechanism 46 can be used for placing the ceiling 24. Secondly, both the third temporary storage mechanism 64 and the fourth temporary storage mechanism 66 can be used for placing the carrying tray 26 or the ceiling 24, respectively. Among them, the fourth temporary storage mechanism 66 is placed in the loading / The space 60 below the cavity 62 is carried out, and the nitrogen cycle of this space 60 can be together with the transfer module 14. Furthermore, the second gate valve mechanism 15 (TLGV) between the transfer module 14 and the loading / unloading module 16 is slidably located at the third temporary storage mechanism 64 or at the fourth temporary storage mechanism 66 . When the second gate valve mechanism 15 slides to the third temporary storage mechanism 64, the space 60 where the fourth temporary storage mechanism 66 is located can communicate with the transfer module 14; otherwise, the transfer module 14 can connect the ceiling 24 or the carrying tray 26 It is transmitted between the loading / unloading module 16 and the reaction module 12 or between the loading / unloading module 16 and the transmission module 14.

Please refer to FIG. 1 and FIG. 2 at the same time. For convenience of explanation, positions 23 (R1) and 25 (R2) at the reaction module 12 respectively indicate the positions of the bearing tray and the ceiling when they are placed in the reaction chamber 22. In the case of an epitaxial process facing upwards, the carrier tray carrying the substrate wafer can be placed by the outside through the third gate valve mechanism 17 (LAGV) in the third temporary storage mechanism 64 of the loading / unloading module 16 or It is then moved to the fourth temporary storage mechanism 66 that is idle, and the clean ceiling can also be placed in the third temporary storage mechanism 64 that is idle in the loading / unloading module 16 or further moved to the idle first Four temporary storage mechanisms 66 are prepared for epitaxial growth. It can be understood that the order of the loading tray and the ceiling sent into the epitaxial process machine 2 from the outside can be reversed.

Continuing to refer to FIGS. 1 and 2, after passing through the second gate valve mechanism 15 (TLGV) and the first gate valve mechanism 13 (RTGV), the robot arm 48 of the transfer module 14 can load / unload the load tray at the module 16 The ceiling and the ceiling are moved into the reaction module 12, respectively. Among them, the carrying tray 26 is installed on the male rotary table. At this time, the male rotary table is at the position 23 (R1), and the ceiling 24 is installed at the position 25 (R2). Among them, the position 25 (R2) is near the bottom of the upper cavity of the reaction chamber 22, and the ceiling 24 is above the carrying tray 26, that is, the position 25 (R2) is above the position 23 (R1). After the first gate valve mechanism 13 (RTGV) is closed to start epitaxial growth, in general, the substrate wafer and the ceiling 24 in the carrier tray 26 perform an epitaxial growth deposition reaction under a high temperature and vacuum atmosphere to grow an epitaxial layer. It takes about 6 hours to grow to the desired epitaxial layer thickness.

Continuing to refer to FIG. 1 and FIG. 2, when the carrier tray carrying the substrate wafer and the clean ceiling are moved into the reaction chamber 22, the carrier tray carrying the next batch of substrate wafers to be reacted and the next The ceiling can be placed in the fourth temporary storage mechanism 66 or the third temporary storage mechanism 64 which is idle. Alternatively, the next batch of trays placed at the loading / unloading module 16 can be further moved to the first temporary storage mechanism 44 of the idle transfer module 14 for preparation, and the next ceiling can be moved into The second temporary storage mechanism 46 is prepared. Therefore, when substrate wafers are undergoing epitaxial growth in the reaction module 12, the next batch of carrier disks and clean ceilings can be placed in the idle transfer module 14 or in idle loading / unloading. In module 16, That is, the transfer module 14 and the loading / unloading module 16 of the present invention respectively have two temporary storage mechanisms for placing the next batch of load trays and a clean ceiling. One of the advantages is that during the epitaxial growth of the reaction module 12, the next batch of load trays and clean ceilings can be prepared in the epitaxial process machine 2 to be directly transferred into the reaction module 12. in.

Continuing to refer to FIG. 1 and FIG. 2, it is assumed that the first gate valve mechanism 13 is adopted when the carrier tray of the next batch of wafers to be reacted and the next ceiling are placed in the loading / unloading module 16. (RTGV), the robotic arm 48 of the transfer module 14 can move the carrier disk 26 carrying the epitaxial wafer from the reaction module 12 to the idle first temporary storage mechanism 44, and the ceiling 24 used by the epitaxial growth can stay The second temporary storage mechanism 46 in the reaction module 12 or is moved into an idle state for blowing and cooling or to be removed from the epitaxial process machine 2. Next, the transfer module 14 moves the next batch of substrate trays and substrates in the load / unload module 16 into the empty reaction module 12 to start the second batch of substrate wafers. Crystal growth. According to the above, during the epitaxial growth of the reaction module 12, the carrier disk 26 carrying the epitaxial wafer can be moved from the first temporary storage mechanism 44 to the idle third temporary storage mechanism 64 or the fourth temporary storage mechanism 66. Pending removal. Similarly, the ceiling 24 used by Epistar can also be moved from the second temporary storage mechanism 46 to the idle fourth temporary storage mechanism 66 or the third temporary storage mechanism 64 for removal. Therefore, the carrier discs carrying wafers can be automatically transferred in the epitaxial process machine 2 without generating waiting time for each other. The carrier discs and the ceiling can be loaded in the reaction module 12, the transport module 14, and the loading / The load-out modules 16 are exchanged cyclically, which reduces the shutdown of the epitaxial process machine 2 and increases its use efficiency.

Continuing to refer to FIG. 1 and FIG. 2, it can be understood that when the next batch of load trays and the next ceiling to be epitaxially grown are placed in the first temporary storage mechanism 44 and the second temporary storage mechanism 46, The wafer carrier plate 26 and the used ceiling 24 can be moved from the reaction module 12 into the idle loading / unloading In the module 16, after being purged with nitrogen and cooled, the epitaxial process machine 2 can be directly removed from the loading / unloading module 16.

FIG. 3 is a schematic side view of an embodiment of an epitaxial process machine face down according to the present invention, and FIG. 4 is a configuration and a part of a mechanism for performing an face up process of an epitaxial process machine of the present invention. A schematic side view of a transmission mode embodiment. The difference from FIG. 1 and FIG. 2 is that in the reaction module 12, the position 23 (R1) of the orbiting disk is above the position 25 (R2) of the ceiling 24, that is, the carrying tray 26 is above the ceiling 24, and the ceiling 24 is near the lower cavity of the reaction chamber 22. In this case, the epitaxial process can still make good use of the transfer module 14 and the loading / unloading module 16 of the present invention, which have two temporary storage mechanisms, and perform the same process as the loading tray 26 and the ceiling 24 of the upward facing process The automatic transmission method of cyclic exchange is not repeated here.

5A-5C are top views of the configuration of the transfer module, part of the gate valve mechanism, and the temporary storage mechanism of the present invention. When the first temporary storage mechanism 44 and the second temporary storage mechanism 46 are fixed, as shown in FIG. 5A, the first A temporary storage mechanism 44 and a second temporary storage mechanism 46 are in the upper, lower, overlapping or aligned positional relationship, both of which are at the same corner of the nitrogen box of the transfer module, for example, at the same corner as the first gate valve mechanism 13 . As shown in FIG. 5B, the first temporary storage mechanism 44 and the second temporary storage mechanism 46 are also in the upper and lower positions, but they are on the same side of the nitrogen box of the transfer module, for example, with the first gate valve mechanism 13 or the second gate valve. On the border of different sides of the mechanism 15. As shown in FIG. 5C, the first temporary storage mechanism 44 and the second temporary storage mechanism 46 are in an upper-level but non-overlapping / non-aligned positional relationship. For example, the first temporary storage mechanism 44 is disposed at a corner adjacent to the first gate valve mechanism 13, and The second temporary storage mechanism 46 is provided on a corner adjacent to the second gate valve mechanism 15 and vice versa.

Furthermore, it should be noted that, optionally, the two temporary storage mechanisms of the transmission module 14 may also be movable (refer to FIG. 1), and the ceiling can be clamped by a clamping mechanism 49 (FIG. 1) that can be raised and lowered. And carrying tray. In the case where the two temporary storage mechanisms are in the upper, lower, overlapping or aligned positional relationship, the upper clamping mechanism It is a gripping tray, and the lower gripping mechanism is a gripping ceiling. In the case where the two temporary storage mechanisms are in the upper and lower layers but in a non-overlapping / non-aligned positional relationship, it is not limited to which of the holding disks is clamped.

FIG. 6A is a schematic front view of a three-dimensional side of a loading / unloading module placing a carrier disk, FIG. 6B is a schematic front view of another three-dimensional side of a loading / unloading module placing a carrier disk, FIG. FIG. 6C is a schematic front view of a loading / unloading module placement box component of the present invention, and FIG. 6D is another three-dimensional schematic front view of a partial structure of a loading / unloading module of the present invention. Please refer to FIGS. 6A to 6D. In this embodiment, the loading / unloading module 16 is a nitrogen box design, and a third temporary storage mechanism 64 is provided in the hollow cavity of the nitrogen box. The mechanism 64 includes a slide table 63 on which a cassette 20, a tray 26 or a ceiling 24 can be placed (see FIG. 1 or FIG. 4). Secondly, the loading / unloading module 16 may have an upper cover 61 that can be opened and opened, so as to facilitate the user to directly open the loading / unloading module 16 and load / unload the box component 20. Furthermore, pins 67 (pins) are provided on the four corners of the slide table 63 to set the carrier tray 26 on which the wafer 27 is carried on the slide table 63. In addition, the base 68 of the sliding table 63 is provided with a groove 65, wherein the depth of the recess of the groove 65 can be matched with the opening size of the third gate valve mechanism 17 (see FIG. 3) so as to place the box member 20 in the groove 65 and slide directly into the loading / unloading cavity 62. In addition, the base 68 can be rotated / positioned by the gear 19. Therefore, one of the advantages of the epitaxial process machine 2 of the present invention is that the design of the loading / unloading module 16 facilitates the loading and unloading, loading / unloading, and loading / unloading of the box component 20, the carrier tray 26, or the ceiling 24, respectively. The charge / purge procedure is performed. For example, the carrier disk carrying the substrate wafer can be stored in a box component, which can be placed in the groove of the slide table and then directly pushed into the loading / unloading cavity. After closing the gate valve mechanism, The nitrogen filling and blowing process can be performed on the loading / loading cavity; after the nitrogen filling and blowing process is completed, the upper cover of the loading / loading cavity can be opened, and the box component can be taken out from the loading / loading cavity and Move to one of the left and right high shelves next to the loading / unloading cavity.

FIG. 7A is a schematic top view of the positioning mechanism of the present invention, FIG. 7B is a schematic three-dimensional side view of the positioning mechanism of the present invention, and FIG. 7C is a schematic side view of the positioning mechanism of the present invention. Please refer to FIG. 7A to FIG. 7C. In the present invention, a positioning mechanism 21 can be provided on both the reaction module 12 and the loading / unloading module 16 to calibrate the loading plate. In one embodiment, the design of the carrier plate 26 and its surroundings can be matched with the return mechanism 21 to perform the position calibration of the carrier plate 26. In this embodiment, a home mechanism 21 has a sensor 29. When the carrier disk 26 is sent into the reaction module 12 and is set on the common turntable, the sensor 29 of the home mechanism 21 can be used with the carrier disk. 26 to perform home calibration. In addition, the return mechanism 21 further includes a gear member 39 (gear member) to rotate or drive the sensor 29 or the return mechanism 21 itself as needed. In this embodiment, the sensor 29 may be a photo interrupter, a reflective sensor or other non-contact sensor, and the actuating member 39 may be a gear assembly or other suitable rotating or driving members.

FIG. 8 is a schematic partial rear view of the loading / unloading module provided with a homing mechanism according to the present invention. Please refer to FIG. 8, the loading / unloading module 16 of the present invention may also be provided with one or more homing mechanisms. For example, the rotation sensor 71 of the loading tray and the slide-in positioning sensor 69 of the slide-in positioning are provided at appropriate positions of the loading / unloading module 16. A spur gear 73 is provided below the slide table 63 to rotate the slide table 63, and then rotate a bearing plate or a ceiling carried on the slide table 63 for orientation. Therefore, in the case where the reaction module 12 and the loading / unloading module 16 of the present invention are both provided with a return mechanism, the orientation of the carrying tray and the ceiling can be corrected to each other. In this way, when the carrier tray and the ceiling are transferred between the loading / unloading module 16 and the reaction module 12 by the transfer module 14, the positioning of the two can be ensured through the return mechanism. Once an error occurs, one of the loading / unloading module 16 and the reaction module 12 can be home-corrected first, and then the home-correction signal is transmitted to the other of the two to ensure that The load tray and ceiling are positioned correctly.

FIG. 9 is a schematic diagram of steps of an embodiment of an automatic transmission method according to the present invention. Referring to FIG. 9, the automatic transfer method of the present invention can be executed and operated in a loading / unloading cavity, a transfer module, and a reaction cavity which can be connected and isolated. One of the features of the present invention is that the transfer module provides first and second temporary storage mechanisms (step 51), a third temporary storage mechanism is provided in the loading / unloading cavity (step 52), and the on-loading A fourth temporary storage mechanism is provided in the space below the loading / unloading cavity (step 53). The space under the loading / unloading cavity is in communication with the transfer module, and the nitrogen cycle can be together with the transfer module. In the reaction chamber, an epitaxial growth reaction can be performed on a substrate wafer (first wafer) in a carrier tray (first carrier tray). Generally, there is a ceiling (first ceiling) and a carrier tray in the epitaxial growth reaction. Match to perform epitaxial growth reaction (step 54). In addition, another substrate wafer waiting for the epitaxial growth reaction is carried by the second carrier disk, where the second carrier disk can be placed in the idle third temporary storage mechanism, the fourth temporary storage mechanism, and the first temporary storage. One of the three institutions (step 55). When the second carrier disk is placed in the third or the fourth temporary storage mechanism, the carrier disk (the first carrier disk) carrying the epitaxial reaction and carrying the epitaxial wafer is transferred from the reaction chamber. Go to the first temporary storage mechanism to cool down, and then the second carrier tray is transferred to the reaction chamber by the transfer module for epitaxial growth reaction (step 56). If the second carrier tray is placed in the first temporary storage mechanism, the first carrier disk carrying the epitaxial wafer is transferred from the reaction chamber to the third temporary storage mechanism or the fourth temporary storage mechanism for processing. The temperature is lowered, and then a second carrier tray is transferred into the reaction chamber to perform an epitaxial reaction (step 57).

As mentioned in the earlier paragraph, in the case where the second carrier tray is placed in the third temporary storage mechanism or the fourth temporary storage mechanism, the clean ceiling (second ceiling) can be placed in the idle third temporary storage mechanism Or the fourth temporary storage mechanism, when the first ceiling to be used is transferred from the reaction chamber to the idle second temporary storage mechanism for cooling, the second ceiling may be transferred to the reaction chamber. In addition, the cooling step of performing the epitaxial wafer and its carrier tray or more including the used ceiling is performed under a nitrogen atmosphere purged with nitrogen.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.

Claims (22)

An epitaxial process system includes: a reaction module including a reaction chamber, a susceptor and a ceiling accommodated in the reaction chamber to assist at least one wafer in the carrier An epitaxial reaction; a transmission module, including a first stage storage mechanism (second stage) and a second stage storage mechanism, wherein the first stage storage mechanism is used for placing the carrier disk, the second stage storage A mechanism is provided for placing the ceiling; a loading / unloading module, including a loading / unloading cavity and a third temporary storage mechanism accommodated in the loading / unloading cavity, the third A temporary storage mechanism is provided for placing the carrier disk or the ceiling; and a fourth temporary storage mechanism is provided below the loading / unloading cavity and provides a use for placing the carrier disk or the ceiling; The carrier plate of the wafer subjected to epitaxial reaction is moved to the reaction chamber by one of the third temporary storage mechanism, the fourth temporary storage mechanism, and the first temporary storage mechanism. The epitaxial process system according to claim 1, wherein the carrying plate and the ceiling are subjected to the epitaxial reaction in the reaction chamber under a vacuum atmosphere; after the reaction, the carrying plate and the ceiling are in a Cool or clean the reaction module, the transfer module, or the load / unload module in a nitrogen atmosphere. The epitaxial process system according to claim 2, further comprising a first gate valve mechanism disposed between the reaction chamber and a nitrogen box containing the first temporary storage mechanism and the second temporary storage mechanism to isolate The reaction chamber and the transmission module. The epitaxial process system according to claim 3, wherein the positional relationship above and below the first temporary storage mechanism and the second temporary storage mechanism is located at a corner or a side of the nitrogen box, or the first temporary storage mechanism And the second temporary storage mechanism are located on different sides of the nitrogen box. The epitaxial process system according to claim 3, further comprising a second gate valve mechanism disposed between the nitrogen box and the loading / unloading cavity to isolate the transfer module and the loading / unloading cavity. body. The epitaxial process system according to claim 3, wherein the fourth temporary storage mechanism is disposed in a space communicating with the nitrogen box of the transfer module or in the nitrogen box. The epitaxial process system according to claim 1, wherein the first temporary storage mechanism and the second temporary storage mechanism each include a plurality of bases, and an edge of any of the plurality of bases is provided with the supporting tray or the A ceramic or graphite part of the ceiling. The epitaxial process system according to claim 1, wherein the first temporary storage mechanism and the second temporary storage mechanism are respectively fixed or movable. The epitaxial process system according to claim 1, wherein the third temporary storage mechanism and the fourth temporary storage mechanism are a plurality of ceramic pieces or a plurality of graphite pieces, respectively. The epitaxial process system according to claim 1, wherein the reaction module, the transfer module, and the loading / unloading module are each a nitrogen box design. The epitaxial process system according to claim 10, further comprising a first gate valve mechanism and a second gate valve mechanism respectively disposed between the nitrogen box designs, and a third gate valve mechanism disposed between the nitrogen box designs. And one outside. The epitaxial process system according to claim 11, wherein the loading / unloading module further comprises a slide table having a groove in the loading / unloading cavity. After a cassette member is placed in the groove on the slide table, the cassette member reaches the loading / unloading cavity from the outside through the third gate valve mechanism. The epitaxial process system according to claim 1, wherein the reaction chamber and the loading / unloading chamber each further include a home mechanism to perform orientation of the carrier plate and the ceiling, respectively ( orientation). The epitaxial process system according to claim 1, wherein the transfer module further includes a robot to move the carrier plate and the ceiling. The epitaxial process system according to claim 1, wherein the carrier disk is mounted on a male rotary disk of the reaction chamber, and the ceiling is disposed adjacent to the carrier disk. An automatic transfer method, which operates in a loading / unloading cavity, a transfer module, and a reaction cavity that can be connected and isolated, includes: providing a first temporary storage mechanism and a first transfer mechanism in the transfer module; Two temporary storage mechanisms; a third temporary storage mechanism provided in the loading / loading cavity; a fourth temporary storage mechanism provided in a space below the loading / loading cavity, the space and The transfer module communicates; an epitaxial reaction is performed on a first wafer in the reaction chamber, the first wafer is placed in a first carrier tray, and a first ceiling is formed during the epitaxial reaction. Cooperate with the first carrier disk; provide a second carrier disk with a second wafer, the second carrier disk is placed in the third temporary storage mechanism, the fourth temporary storage mechanism and the first temporary storage One of the three storage mechanisms to wait for the epitaxial reaction; and transmitting the first carrier disk and the second carrier disk in the second When the carrier disk is placed in the third or the fourth temporary storage mechanism, the first carrier disk that completes the epitaxial reaction is transferred from the reaction chamber to the first temporary storage mechanism for cooling, and then Transfer the second carrier disk to the reaction chamber to perform the epitaxial reaction; when the second carrier disk is placed in the first temporary storage mechanism, the first carrier disk that completes the epitaxial reaction is The reaction chamber is transferred to the third temporary storage mechanism or the fourth temporary storage mechanism to cool down, and then the second carrier tray is transferred to the reaction chamber to perform the epitaxial reaction. The automatic transmission method according to claim 16, wherein when the second carrier tray is placed in the third temporary storage mechanism or the fourth temporary storage mechanism which is idle, it further includes placing a second ceiling on The fourth temporary storage mechanism or the third temporary storage mechanism in idle, the first ceiling through the epitaxial reaction is transferred from the reaction chamber to the second temporary storage mechanism for cooling, and then the second ceiling Into the reaction chamber. The automatic conveying method according to claim 16, further comprising providing the conveying module with a nitrogen atmosphere to cool down the first carrier tray and the first ceiling. The automatic transmission method according to claim 16, wherein when the second carrier tray is placed in the idle first temporary storage mechanism, the method further includes placing a second ceiling in the second temporary storage mechanism, The first ceiling that has undergone the epitaxial reaction is transferred from the reaction chamber to the fourth temporary storage mechanism or the third temporary storage mechanism that is idle to cool down, and then the second ceiling is transferred to the reaction chamber. . The automatic transfer method according to claim 19, further comprising providing a nitrogen atmosphere in the loading / unloading chamber to cool down the first carrier tray and the first ceiling. The automatic transfer method according to claim 16, wherein before the step of performing the epitaxial reaction on the first wafer in the reaction chamber, the method further comprises providing a vacuum atmosphere in the reaction chamber, and in the reaction chamber. After performing the epitaxial reaction step on the first wafer in the body, a nitrogen atmosphere is provided in the reaction chamber to cool the first carrier tray and the first ceiling in the reaction chamber. The automatic transfer method according to claim 16, further comprising: providing a slide table with a groove received in the loading / unloading cavity, and storing a box component of the second carrier disk. The groove placed on the slide table passes through a third gate valve mechanism from the outside through the loading / loading cavity to the outside and moves into the loading / loading cavity and closes the third gate valve. A mechanism; performing a filling and blowing procedure on the loading / unloading cavity; opening an upper cover of the loading / unloading cavity; and moving the box component into the loading / unloading cavity near the left and right sides In one of the shelves.