JP2019186536A - Epitaxy process system comprising automatic conveyance system, and automatic conveyance method of the same - Google Patents

Abstract

To provide an epitaxy process system comprising an automatic conveyance system and an automatic conveyance method thereof.SOLUTION: In an epitaxy process system comprising an automatic conveyance system and an automatic conveyance method thereof according to the present invention, the epitaxy process system is provided with a reaction module, a conveyance module, and a load lock module, and the conveyance module and the load lock module severally has two temporary storage mechanisms. A susceptor on which a wafer which has not undergone epitaxial reaction is mounted is moved from one of the two temporary storage mechanisms of the load lock module or a temporary storage mechanism of the conveyance module to a reaction cavity part of the reaction module, and epitaxial reaction is performed in combination with a ceiling. Thus, the conveyance module performs automatic conveyance of the susceptor and the ceiling between the reaction module, the conveyance module and the load lock module.SELECTED DRAWING: Figure 4

Description

  The present invention relates to the field of epitaxy growth equipment, and more particularly, to an epitaxy glove box equipment and an automatic transfer method thereof.

  A typical epitaxy process station includes a reaction module, a transfer module, and a load lock module, and a wafer is transferred between the reaction module and the load lock module by the transfer module.

  However, in the above-described conventional technique, that is, the epitaxy growth reaction time is long and the epitaxy layer must be gradually cooled so as not to be damaged. For this reason, maintaining the epitaxy quality of the wafer while shortening the stop time of the station has been an important issue for the epitaxy process.

  Therefore, the present inventor considered that the above-mentioned drawbacks can be improved, and as a result of intensive studies, the present inventor has arrived at a proposal of the present invention that effectively improves the above-described problems by rational design.

  In view of such a conventional situation, the present invention improves the conventional design in which a temporary storage area module must be separately installed by configuring a system configuration having an automatic transfer function with only three modules. An object of the present invention is to provide an epitaxy process system and an automatic transfer method thereof that reduce the footprint (print) and the cost of station equipment.

  Another object of the present invention is to provide two temporary storage spaces at the locations of the transfer module (Transfer Module, TM) and the load lock module (LLM), respectively, in the epitaxy process station, and a susceptor and It is to provide an epitaxy process system and an automatic transfer method thereof that perform cyclic exchange of ceilings, shorten station downtime, and improve the use efficiency of the station.

  Still another object of the present invention is to configure an automatic transfer function with only three modules, and a return mechanism is provided in the module to perform mutual positioning correction between the modules, thereby improving the accuracy during operation of the station. To provide an epitaxy process system and an automatic transfer method thereof.

  To achieve the above object, an epitaxy process system according to the present invention includes a reaction cavity, a susceptor, and a ceiling, and is accommodated in the reaction cavity to assist an epitaxial reaction of at least one wafer in the susceptor. A reaction module, a first temporary storage mechanism, and a second temporary storage mechanism, wherein the first temporary storage mechanism is used for mounting the susceptor, and the second temporary storage mechanism mounts the ceiling. And a third temporary storage mechanism housed in the load lock cavity, wherein the third temporary storage mechanism is used to place the susceptor or the ceiling. A lock module, installed below the load lock cavity and the susceptor or the A fourth temporary storage mechanism used for placing a well, wherein the susceptor of the wafer that has not undergone an epitaxial reaction is the third temporary storage mechanism, the fourth temporary storage mechanism, and the first temporary storage mechanism. Moving to the reaction cavity location by one of the above.

  Another aspect of the present invention is an automatic conveyance method. The automatic transfer method is operated in a load lock cavity, a transfer module, and a reaction cavity that are communicated and isolated, and a first temporary storage mechanism and a second temporary storage mechanism are provided in the transfer module; and the load lock Providing a third temporary storage mechanism in the cavity; providing a fourth temporary storage mechanism in a space below the load lock cavity, wherein the space communicates with the transfer module; and in the reaction cavity. Performing an epitaxial reaction on the first wafer, the first wafer being placed in a first susceptor and having a first ceiling combined with the first susceptor in the course of the epitaxial reaction; and a second wafer A second susceptor having a second susceptor before idling. A first temporary storage mechanism, a fourth temporary storage mechanism, and a first temporary storage mechanism mounted on one of the first temporary storage mechanism and waiting for the epitaxial reaction; and the first susceptor and the second susceptor are transported When the second susceptor is mounted on the third temporary storage mechanism or the fourth temporary storage mechanism, the first susceptor having completed the epitaxial reaction is transported from the reaction cavity to the first temporary storage mechanism. The second susceptor is transported into the reaction cavity and the epitaxial reaction is performed, and when the second susceptor is placed on the first temporary storage mechanism, the epitaxial reaction is completed. The first susceptor is transported from the reaction cavity to the third temporary storage mechanism or the fourth temporary storage mechanism and cooled, and then the second susceptor is cooled. Data comprises the steps of the epitaxial reaction is carried out is conveyed into the reaction cavity.

It is the schematic of the side surface which shows the one part mechanism and member position of the epitaxy process station which concerns on one Embodiment of this invention. It is the schematic of the side surface in which the epitaxy process station which concerns on one Embodiment of this invention performs arrangement | positioning and a conveyance method of a partial mechanism facing up. 1 is a schematic side view of an epitaxy process station according to an embodiment of the present invention facing downward; FIG. It is the schematic of the side which shows the partial mechanism and member position of the epitaxy process station which concerns on one Embodiment of this invention downward. It is a top view which shows arrangement | positioning of the conveyance module of 1st embodiment of this invention, a part of gate valve mechanism, and a temporary storage mechanism. It is a top view which shows arrangement | positioning of the conveyance module of 2nd embodiment of this invention, a part of gate valve mechanism, and a temporary storage mechanism. It is a top view which shows arrangement | positioning of the conveyance module of 3rd embodiment of this invention, some gate valve mechanisms, and a temporary storage mechanism. It is the schematic of the inclination which shows the partial structure of the load lock module of this invention. It is the schematic of the other inclination front which shows the partial structure of the load lock module of this invention. It is the schematic of the front of the partial structure of the load lock module of this invention, and showing a cassette member case. It is the schematic of the other inclination front which shows the partial structure of the load lock module of this invention. It is the schematic which shows the upper surface which installs the return mechanism of this invention. It is the inclination schematic which shows the side surface of the return mechanism of this invention. It is the schematic which shows the side surface in which the reaction module of this invention installs a return mechanism. It is the schematic of the inclination which shows the one part back which installs a return mechanism in the load lock module of this invention. It is the schematic of the step which shows the automatic conveyance method which concerns on one Embodiment of this invention.

  Preferred embodiments of the present invention will be described with reference to the accompanying drawings. The embodiments described below do not limit the contents of the present invention described in the claims. In addition, all the configurations described below are not necessarily essential requirements of the present invention.

  The epitaxy process system according to the present invention is an epitaxy process facility mainly including a glove box facility. Illustration and description of a gas pipeline system, a control system, and the like that are generally provided in a glove box facility of an epitaxy process facility are omitted. However, when actually implemented in a station, it is a necessary system including an epitaxy process facility.

  In addition, the temporary storage mechanism according to the present invention includes one or more bases for placing an article, or the article is fixed by one or more clamping mechanisms, or the article is placed on the placement mechanism. . The article here is a susceptor or a ceiling. In order to protect the article to be placed or sandwiched, the base or the clamping mechanism may be a ceramic or graphite device, or a ceramic member or graphite installed at a position where the temporary storage mechanism and the article are in contact or at a supporting position. It has a member. For example, the base is made of a metal material, and a ceramic member or a graphite member for supporting an article is installed on the edge of the base.

  An epitaxy wafer refers to a substrate in which one or more epitaxy layers are grown on a substrate wafer through an appropriate method such as chemical vapor deposition. Therefore, in the present invention, the difference between the substrate wafer and the epitaxy wafer is whether or not it has undergone epitaxy growth. Unless stated otherwise, in the following the wafer may be one or both of a substrate wafer or an epitaxy wafer.

FIG. 1 is a schematic side view showing a partial mechanism / member position of an epitaxy process station according to an embodiment of the present invention. The epitaxy process station 2 according to the present invention includes three modules: a reaction module 12 (reaction module, RM), a transfer module 14 (TM), and a load lock module 16 (LLM). The reaction module 12 provides a location and associated mechanism for performing epitaxial growth of the wafer. One or more ceilings 24 and one or more susceptors 26 are disposed in the reaction cavity 22 of the reaction module 12. One or more wafers (not shown) are accommodated in each susceptor 26, and an epitaxial reaction for epitaxy growth occurs in the reaction module 12 on a wafer (substrate wafer) that has not undergone epitaxy growth. The load lock module 16 provides a location and associated mechanism for preparing a wafer (substrate wafer) that has not undergone epitaxy growth, and a location and associated mechanism for removing a wafer (epitaxy wafer) that has undergone an epitaxy process. The transfer module 14 provides a location and related mechanism for transferring wafers and related articles. That is, the transfer module 14 is usually installed between the reaction module 12 and the load lock module 16.
Next, the reaction module 12, the transfer module 14, and the load lock module 16 in the broad sense of the present invention each occupy a space having a length, a width, and a height, and include a cavity. The cavities may fill or be smaller than the space they occupy, and the module mechanism is installed or mounted. If each cavity is smaller than the space it occupies, other mechanisms may be installed or planned in the surplus portion of the space it occupies. In one embodiment, the reaction module 12 includes a reaction cavity 22 and the load lock module 16 includes a load lock cavity 62. Next, the reaction module 12, the transfer module 14, and the load lock module 16 referred to in the present invention each refer to a nitrogen box design, and a gate valve mechanism is installed between the nitrogen boxes to communicate gas. It is also possible to provide a path for transporting and / or isolating an article by isolating gas and / or gas.

FIG. 2 is a schematic view of a side surface where an epitaxy process station according to an embodiment of the present invention performs the arrangement and transfer method of a partial mechanism facing up. Please refer to FIG. 1 and FIG. The transport module 14 further includes a first temporary storage mechanism 44 (stage) and a second temporary storage mechanism 46, and the load lock module 16 further includes a third temporary storage mechanism 64 and a fourth temporary storage mechanism 66. In one embodiment, the first gate valve mechanism 13 (RTGV) is installed between the reaction module 12 and the transfer module 14, and the second gate valve mechanism 15 (TLGV) is set between the transfer module 14 and the load lock module 16. The third gate valve mechanism 17 (LAGV) is installed between the load lock module 16 and the outside world. In one embodiment, the first temporary storage mechanism 44 is used to place the susceptor in the complete epitaxy process (including article transport, epitaxy growth, heating and cooling before and after the reaction, and blasting). The two temporary storage mechanisms 46 are used for mounting the ceiling 24.
Next, the third temporary storage mechanism 64 and the fourth temporary storage mechanism 66 are used for mounting the susceptor 26 or the ceiling 24, respectively, and the fourth temporary storage mechanism 66 is located below the load lock cavity 62 in terms of position arrangement. Installed in the space 60 and the nitrogen circulation in this space 60 is with the transport module 14. Further, the second gate valve mechanism 15 (TLGV) located between the transfer module 14 and the load lock module 16 is slidably positioned at 64 locations of the third temporary storage mechanism, or is positioned at 66 locations of the fourth temporary storage mechanism. The When the second gate valve mechanism 15 slides to the third temporary storage mechanism 64, the space 60 where the fourth temporary storage mechanism 66 is located communicates with the transport module 14. In contrast, the transfer module 14 transfers the ceiling 24 or the susceptor 26 between the load lock module 16 and the reaction module 12 or between the load lock module 16 and the transfer module 14.

Please refer to FIG. 1 and FIG. In order to facilitate understanding, the position at which the susceptor and the ceiling are accommodated in the reaction cavity 22 is displayed at the position of the reaction module 12 by the position 23 (R1) and the position 25 (R2), respectively.
When the epitaxy process is performed face up, is the susceptor on which the substrate wafer is placed placed on the third temporary storage mechanism 64 during idling of the load lock module 16 from the outside via the third gate valve mechanism 17 (LAGV)? The fourth temporary storage mechanism 66 during idling is moved, and the clean ceiling is also placed on the third temporary storage mechanism 64 during idling of the load lock module 16 or moved to the fourth temporary storage mechanism 66 during idling. In preparation for epitaxy growth. Incidentally, the order of the susceptor and the ceiling sent from the outside to the epitaxy process station 2 can be changed.

  As shown in FIGS. 1 and 2, after passing through the second gate valve mechanism 15 (TLGV) and the first gate valve mechanism 13 (RTGV), the robot arm 48 of the transfer module 14 is installed at 16 locations of the load lock module 16. The susceptor and the ceiling are moved to 12 reaction modules, respectively. When the susceptor 26 is installed on the revolution board, the revolution board is located at the position 23 (R1), and the ceiling 24 is installed at the position 25 (R2). Position 25 (R 2) is located near the bottom of the upper cavity of reaction cavity 22 and ceiling 24 is located above susceptor 26. That is, position 25 (R2) is above position 23 (R1). Epitaxy growth begins after the first gate valve mechanism 13 (RTGV) is closed. In general, an epitaxy growth reaction occurs on the substrate wafer and the ceiling 24 in the susceptor 26 under a high temperature and a vacuum atmosphere to grow an epitaxy layer, and an epitaxy layer having a required thickness is grown in about 6 hours. To do.

Subsequently, after the susceptor on which the substrate wafer is placed and the clean ceiling are moved to the reaction cavity 22, the fourth temporary storage mechanism 66 or the second temporary storage mechanism 66 in which the susceptor and ceiling on which the substrate wafer waiting for the next reaction is idling are idled. It is placed and prepared in the three temporary storage mechanism 64. Optionally, the next susceptor placed on the load lock module 16 is moved to the first temporary storage mechanism 44 of the conveying module 14 during idling, and the next ceiling is moved to the second temporary storage mechanism 46. Be prepared. That is, when epitaxy growth of the substrate wafer in the reaction module 12 is performed, the next susceptor and clean ceiling are placed in the transport module 14 during idling or the load lock module 16 during idling.
The transport module 14 and the load lock module 16 according to the present invention each have two temporary storage mechanisms for placing the next susceptor and a clean ceiling. Its advantage is that while epitaxy growth is taking place in the reaction module 12, it is possible to wait for the next susceptor and clean ceiling to be prepared in the epitaxy process station 2 and moved directly into the reaction module 12. .

Subsequently, when the wafer susceptor waiting for the next reaction and the next ceiling are placed in the load lock module 16, the first gate valve mechanism 13 (RTGV) is passed through, and the susceptor 26 on which the epitaxy wafer is placed. Is moved from the reaction module 12 to the first temporary storage mechanism 44 during idling by the robot arm 48 of the transfer module 14. The ceiling 24 used for epitaxy growth is either suspended in the reaction module 12 or moved to a second temporary storage mechanism 46 during idling to wait for blasting and cooling or removal from the epitaxy process station 2.
Next, the next susceptor on which the substrate wafer in the load lock module 16 is placed and the next ceiling are moved by the transfer module 14 into the empty reaction module 12, and the epitaxy growth of the next substrate wafer is started. As described above, while the epitaxy growth is performed in the reaction module 12, the susceptor 26 on which the epitaxy wafer is placed is moved from the first temporary storage mechanism 44 to the third temporary storage mechanism 64 or the fourth temporary storage mechanism 66 during idling. Wait until it is moved to and taken out.
Similarly, the ceiling 24 used for the epitaxy growth is also moved from the second temporary storage mechanism 46 to the fourth temporary storage mechanism 66 or the third temporary storage mechanism 64 during idling and waits for removal. That is, the susceptors on which the wafers are placed are automatically transferred in the epitaxy process station 2 so that there is no time to wait for the transfer, and the susceptor and the ceiling circulate between the reaction module 12, the transfer module 14, and the load lock module 16. Are replaced, the number of stops of the epitaxy process station 2 is reduced, and the use efficiency is increased.

  Subsequently, when the susceptor waiting for the next epitaxy growth and the next ceiling are placed on the first temporary storage mechanism 44 and the second temporary storage mechanism 46, the susceptor 26 on which the epitaxy wafer is placed and the used ceiling 24. Are transferred from the reaction module 12 into the idling load lock module 16, both of which are removed from the load lock module 16 directly to the epitaxy process station 2 after nitrogen blasting and cooling.

FIG. 3 is a schematic view of a side where an epitaxy process station according to an embodiment of the present invention performs face down, and FIG. 4 illustrates a partial mechanism of the epitaxy process station according to an embodiment of the present invention. It is the schematic of the side surface which performs arrangement | positioning and a conveyance method.
The difference between FIG. 1 and FIG. 2 is that the position 23 (R 1) where the revolution board is located in the reaction module 12 is located above the position 25 (R 2) where the ceiling 24 is located, that is, the susceptor 26 is located above the ceiling 24. The ceiling 24 is a point located near the lower cavity of the reaction cavity 22. In this case, the transport module 14 and the load lock module 16 each having the two temporary storage mechanisms of the present invention are used in the course of the epitaxy process, and the automatic transport of the susceptor 26 and the ceiling 24 for the circulation exchange similar to the face-up process is executed. The re-statement is omitted.

5A to 5C are top views showing the arrangement of the transfer module, the partial gate valve mechanism, and the temporary storage mechanism of the present invention. When both the first temporary storage mechanism 44 and the second temporary storage mechanism 46 are fixed, as shown in FIG. 5A, the first temporary storage mechanism 44 and the second temporary storage mechanism 46 are vertically layered, The positions are superimposed or aligned, and both are positioned at the same corner of the nitrogen box of the transfer module, for example, at the same corner on the same side as the first gate valve mechanism 13.
For example, as shown in FIG. 5B, the first temporary storage mechanism 44 and the second temporary storage mechanism 46 also have a positional relationship in which they are vertically layered. However, both are located on the same side of the nitrogen box of the transfer module, for example, on one side different from the first gate valve mechanism 13 or the second gate valve mechanism 15. As shown in FIG. 5C, the first temporary storage mechanism 44 and the second temporary storage mechanism 46 are layered on top and bottom but do not overlap / align. For example, the first temporary storage mechanism 44 is installed at a corner adjacent to the first gate valve mechanism 13 and the second temporary storage mechanism 46 is installed at a corner adjacent to the second gate valve mechanism 15. Good.

  Furthermore, the two temporary storage mechanisms of the transfer module 14 may optionally be movable (see FIG. 1), and the ceiling and the susceptor are sandwiched by a sandwiching mechanism 49 (see FIG. 1) that can be raised and lowered. When the two temporary storage mechanisms have a positional relationship in which the upper and lower layers are layered, overlapped, or aligned, the upper layer sandwiching mechanism sandwiches the susceptor, and the lower layer sandwiching mechanism sandwiches the ceiling. When the two temporary storage mechanisms are in a positional relationship where they are layered on top and bottom but are not superimposed / not aligned, either may hold the susceptor.

6A is a schematic view of an inclined front surface where the susceptor is mounted on the load lock module of the present invention, and FIG. 6B is a schematic view of another inclined front surface where the susceptor is mounted on the load lock module of the present invention. FIG. 6C is a schematic diagram of a front surface where a cassette member is placed on the load lock module of the present invention, and FIG. 6D is a schematic diagram of another inclined front surface showing a partial structure of the load lock module of the present invention.
In this embodiment, the load lock module 16 has a nitrogen box design, and a third temporary storage mechanism 64 is installed in the hollow cavity of the nitrogen box. The third temporary storage mechanism 64 includes a sliding tray 63, and the cassette member 20, the susceptor 26, or the ceiling 24 is placed on the sliding tray 63 (see FIG. 1 or FIG. 4). Next, the load lock module 16 has an upper lid 61 that can be opened and closed, so that a user can easily open the load lock module 16 and load / unload the cassette member 20. Further, pins 67 (pins) are respectively installed at the four corners of the sliding tray 63 and used to install the susceptor 26 on which the wafer 27 is placed on the sliding tray 63. A recess 65 is provided in the pedestal 68 of the sliding tray 63. The depth of the recess 65 is adapted to the size of the opening of the third gate valve mechanism 17 (see FIG. 3). It becomes suitable for being slid directly in the load lock cavity 62.
The pedestal 68 is driven by the gear 19 to be rotated / localized. That is, the advantage of the epitaxy process station 2 according to the present invention is that the design of the load lock module 16 is performed by inserting / removing the cassette member 20, the susceptor 26, or the ceiling 24, attaching / detaching, and performing a pumping / purge process. To be advantageous. For example, after the susceptor on which the substrate wafer is placed is stored in the cassette member, and after the cassette member is placed in the recess of the sliding tray, it is pushed directly into the load lock cavity and the gate valve mechanism is closed. A nitrogen charge process is performed on the load lock cavity. After completion of the nitrogen supply process, the upper lid above the load lock cavity is opened, and the cassette member is taken out from above the load lock cavity and moved to one of the elevated frames on the left and right sides near the load lock cavity.

FIG. 7A is a schematic view showing an upper surface on which the return mechanism of the present invention is installed, FIG. 7B is an inclined schematic view showing a side surface of the return mechanism of the present invention, and FIG. It is the schematic which shows the side surface to do.
In the present invention, the return mechanism 21 is installed in both the reaction module 12 and the load lock module 16 to correct the susceptor. In one embodiment, the susceptor 26 and surrounding mechanisms are designed to be combined with the return mechanism 21 to correct the position of the susceptor 26. In this embodiment, the return mechanism 21 has a sensor 29, and the sensor 29 of the return mechanism 21 is combined with the susceptor 26 when the susceptor 26 is transported to the reaction module 12 and installed on the revolution board. Perform return correction. The return mechanism 21 further includes an operating member 39 (gear member), and rotates or drives the sensor 29 or the return mechanism 21 as necessary. In this embodiment, the sensor 29 may be a shading device, a reflection type sensor, or other non-contact type sensor, and the actuating member 39 may be a gear member or other suitable rotating member or driving member.

FIG. 8 is a schematic view of an inclination showing a part of the rear surface where the return mechanism is installed in the load lock module of the present invention. The load lock module 16 according to the present invention is also provided with one or more return mechanisms. For example, a rotary sensor 71 that is a susceptor and a sliding tray push positioning sensor 69 for pushing and positioning the sliding tray are installed at appropriate positions of the load lock module 16.
Below the sliding tray 63, a spur gear 73 is installed to rotate the sliding tray 63 and further rotate the susceptor or ceiling placed on the sliding tray 63 to perform orientation. That is, when the return mechanism is installed in both the reaction module 12 and the load lock module 16 according to the present invention, the susceptor and the ceiling are orientated and corrected for each other. As a result, when the susceptor and the ceiling are transported between the load lock module 16 and the reaction module 12 by the transport module 14, the positions of both are directed by the return mechanism. When an error occurs, one of the load lock module 16 and the reaction module 12 performs the return correction first, and then the return correction signal is transmitted to the other, so that the positions of both susceptors and the ceiling are accurately maintained. The

FIG. 9 is a schematic diagram of steps showing an automatic conveyance method according to an embodiment of the present invention. The automated transport method according to the present invention is performed and operated in a load lock cavity, a transport module, and a reaction cavity that are communicated and isolated.
A feature of the present invention is that a first temporary storage mechanism and a second temporary storage mechanism are provided in the transfer module (step 51), and a third temporary storage mechanism is provided in the load lock cavity (step 52). A fourth temporary storage mechanism is provided in the space (step 53). When the space below the load lock cavity is in communication with the transfer module, nitrogen circulation is combined with the transfer module. In the reaction cavity, an epitaxy growth reaction is performed on the substrate wafer (first wafer) in the susceptor (first susceptor). During a general epitaxy growth reaction, a ceiling (first ceiling) and a susceptor are combined to perform an epitaxy growth reaction (step 54). In addition, another substrate wafer waiting for the epitaxy growth reaction is placed on the second susceptor, and the second susceptor is idled and is one of the third temporary storage mechanism, the fourth temporary storage mechanism, and the first temporary storage mechanism. (Step 55). When the second susceptor is mounted on the third temporary storage mechanism or the fourth temporary storage mechanism and the epitaxial reaction is completed, the susceptor (first susceptor) on which the epitaxy wafer is mounted is moved from the reaction cavity to the first temporary storage mechanism. After being transported to the storage mechanism and cooled, the second susceptor is transported into the reaction cavity by the transport module and an epitaxy growth reaction is performed (step 56). When the second susceptor is placed on the first temporary storage mechanism, the first susceptor on which the epitaxy wafer is placed is transported from the reaction cavity to the third temporary storage mechanism or the fourth temporary storage mechanism and cooled, Thereafter, the second susceptor is transferred into the reaction cavity and an epitaxial reaction is performed (step 57).

  As described above, when the second susceptor is mounted on the third temporary storage mechanism or the fourth temporary storage mechanism, the third temporary storage mechanism or the fourth temporary storage mechanism in which the clean ceiling (second ceiling) is idling. The used first ceiling is transported from the reaction cavity to the second temporary storage mechanism in the idling state and waits for cooling, and then the second ceiling is transported into the reaction cavity. Also included is the step of cooling the epitaxy wafer and its susceptor or used ceiling, which is performed under a nitrogen atmosphere in which nitrogen blasting is performed.

  The above-described embodiments are merely for explaining the technical idea and features of the present invention, and are intended to allow those skilled in the art to understand the contents of the present invention and to carry out the same with the present invention. It is not intended to limit the scope of the claims. Accordingly, improvements or modifications having various similar effects made without departing from the spirit of the present invention shall be included in the following claims.

2 Epitaxy Process Station 12 Reaction Module 13 First Gate Valve Mechanism 14 Transport Module 15 Second Gate Valve Mechanism 16 Load Lock Module 17 Third Gate Valve Mechanism 19 Gear 20 Cassette Member 21 Return Mechanism 22 Reaction Cavity 23 Position 24 Ceiling 25 Position 26 Susceptor 27 Wafer 29 Sensor 39 Actuating member 44 First temporary storage mechanism 46 Second temporary storage mechanism 48 Robot arm 49 Holding mechanism 51 Step 52 Step 53 Step 54 Step 55 Step 56 Step 57 Step 60 Space 61 Upper lid 62 Load lock cavity 63 Sliding tray 64 Third temporary storage mechanism 65 Recessed portion 66 Fourth temporary storage mechanism 67 Pin 68 Base 69 Sliding tray push positioning sensor 71 Rotary Sensor 73 Spur gear

Claims (22)

A reaction module including a reaction cavity, a susceptor, and a ceiling, the reaction module being contained in the reaction cavity and assisting an epitaxial reaction of at least one wafer in the susceptor;
Including a first temporary storage mechanism (stage) and a second temporary storage mechanism, wherein the first temporary storage mechanism is used to place the susceptor, and the second temporary storage mechanism is used to place the ceiling A transport module used; and
A load lock cavity and a third temporary storage mechanism housed in the load lock cavity, wherein the third temporary storage mechanism is a load lock module used to place the susceptor or the ceiling;
A fourth temporary storage mechanism installed below the load lock cavity and used to place the susceptor or the ceiling, wherein the susceptor of the wafer not undergoing an epitaxial reaction is the third temporary storage mechanism; A fourth temporary storage mechanism that is moved to the reaction cavity location by one of the fourth temporary storage mechanism and the first temporary storage mechanism.
Epitaxy process system.   The susceptor and the ceiling perform the epitaxial reaction in the reaction cavity under a vacuum atmosphere, and after the reaction, the susceptor and the ceiling are in the reaction module under a nitrogen atmosphere on the transfer module or the load lock module. The epitaxy process system according to claim 1, wherein the susceptor and the ceiling are cooled or cleaned.   A first gate valve mechanism is provided between the reaction cavity and a nitrogen box in which the first temporary storage mechanism and the second temporary storage mechanism are accommodated, and isolates the reaction cavity from the transfer module. The epitaxy process system according to claim 2.   In the first temporary storage mechanism and the second temporary storage mechanism, the positional relationship between the upper and lower layers is positioned at a corner or a side of the nitrogen box, or the first temporary storage mechanism and the second temporary storage mechanism are The epitaxy process system according to claim 3, wherein the epitaxy process system is located at different sides of the box.   The epitaxy process system according to claim 3, further comprising a second gate valve mechanism installed between the nitrogen box and the load lock cavity to isolate the transfer module from the load lock cavity.   The epitaxy process system according to claim 3, wherein the fourth temporary storage mechanism is installed in a space communicating with a nitrogen box of the transfer module or in the nitrogen box.   Each of the first temporary storage mechanism and the second temporary storage mechanism includes a plurality of bases, and a ceramic member or a graphite member for supporting the susceptor or the ceiling is provided on one edge of the plurality of bases. The epitaxy process system according to claim 1, wherein the epitaxy process system is installed.   2. The epitaxy process system according to claim 1, wherein the first temporary storage mechanism and the second temporary storage mechanism are fixed or movable.   The epitaxy process system according to claim 1, wherein the third temporary storage mechanism and the fourth temporary storage mechanism are respectively a plurality of ceramic members or a plurality of graphite members.   The epitaxy process system of claim 1, wherein each of the reaction module, the transfer module, and the load lock module has a nitrogen box design.   A first gate valve mechanism and a second gate valve mechanism installed between the nitrogen box designs, respectively, and a third gate valve mechanism installed between the nitrogen box design and the outside world. The epitaxy process system according to claim 10.   The load lock module further includes a sliding tray positioned in the load lock cavity and having a recess, and after a cassette stored in the wafer is placed in the recess of the sliding tray, 12. The epitaxy process system according to claim 11, wherein a cassette member reaches from the outside through the third gate valve mechanism and into the load lock cavity.   The epitaxy process system of claim 1, wherein each of the reaction cavity and the load lock cavity further includes a home mechanism for performing orientation of the susceptor and the ceiling, respectively.   The epitaxy process system according to claim 1, wherein the transfer module further comprises a robot arm for moving the susceptor and the ceiling.   The epitaxy process system according to claim 1, wherein the susceptor is installed on a revolution platen of the reaction cavity, and the ceiling is installed adjacent to the susceptor. An automatic transfer method operated in a load lock cavity, a transfer module and a reaction cavity that are communicated and isolated,
Providing a first temporary storage mechanism and a second temporary storage mechanism in the transport module;
Providing a third temporary storage mechanism in the load lock cavity;
Providing a fourth temporary storage mechanism in a space below the load lock cavity, wherein the space communicates with the transfer module;
Performing an epitaxial reaction on the first wafer in the reaction cavity, the first wafer being placed in a first susceptor and having a first ceiling combined with the first susceptor in the epitaxial reaction process When,
A second susceptor having a second wafer is provided, and the second susceptor is mounted on one of the third temporary storage mechanism, the fourth temporary storage mechanism, and the first temporary storage mechanism during idling. Waiting for the epitaxial reaction,
When the first susceptor and the second susceptor are transported and the second susceptor is mounted on the third temporary storage mechanism or the fourth temporary storage mechanism, the first susceptor having completed the epitaxial reaction is The second susceptor is transferred from the reaction cavity to the first temporary storage mechanism and cooled, and then the second susceptor is transferred into the reaction cavity to perform the epitaxial reaction. The second susceptor is transferred to the first temporary storage mechanism. The first susceptor having completed the epitaxial reaction is transported from the reaction cavity to the third temporary storage mechanism or the fourth temporary storage mechanism and cooled, and then the second susceptor is Transported into the reaction cavity and performing the epitaxial reaction,
Automatic transfer method.   When the second susceptor is mounted on the third temporary storage mechanism or the fourth temporary storage mechanism during idling, a second ceiling is mounted on the fourth temporary storage mechanism or the third temporary storage mechanism during idling. And the first ceiling having undergone the epitaxial reaction is transported from the reaction cavity to the second temporary storage mechanism and cooled, and then the second ceiling is transported into the reaction cavity. The automatic conveying method according to claim 16.   The method according to claim 16, further comprising the step of providing the transport module for cooling the first susceptor and the first ceiling under a nitrogen atmosphere.   When the second susceptor is placed on the first temporary storage mechanism during idling, a second ceiling is placed on the second temporary storage mechanism, and the first ceiling that has undergone the epitaxial reaction is removed from the reaction cavity. The method of claim 16, further comprising the step of transporting to the fourth temporary storage mechanism or the third temporary storage mechanism during idling and cooling, and then transporting the second ceiling into the reaction cavity. The automatic conveyance method as described in.   The method of claim 19, further comprising the step of providing the load lock cavity for cooling the first susceptor and the first ceiling under a nitrogen atmosphere.   Prior to the step of performing the epitaxial reaction on the first wafer in the reaction cavity, the step of providing the reaction cavity in a vacuum atmosphere, wherein the epitaxial on the first wafer in the reaction cavity is provided. The automatic transfer according to claim 16, wherein, after the step in which a reaction is performed, the reaction cavity is provided, and the first susceptor and the first ceiling in the reaction cavity are cooled under a nitrogen atmosphere. Method.   Providing a sliding tray housed in the load lock cavity and having a recess, wherein a cassette member in which the second susceptor is stored is placed in the recess of the sliding tray and from outside to outside. After passing through the load lock cavity for a third gate valve mechanism and being moved into the load lock cavity to close the third gate valve mechanism; and an air supply process to the load lock cavity; 17. The method of claim 16, further comprising: opening an upper lid of the load lock cavity; and moving the cassette member to one of left and right elevated frames near the load lock cavity. Automatic conveyance method.

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