TWI527929B - 具有滾軋成型表面之基座和其製造方法 - Google Patents

具有滾軋成型表面之基座和其製造方法 Download PDF

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Publication number
TWI527929B
TWI527929B TW098109276A TW98109276A TWI527929B TW I527929 B TWI527929 B TW I527929B TW 098109276 A TW098109276 A TW 098109276A TW 98109276 A TW98109276 A TW 98109276A TW I527929 B TWI527929 B TW I527929B
Authority
TW
Taiwan
Prior art keywords
substrate support
top surface
substrate
embossing
roll forming
Prior art date
Application number
TW098109276A
Other languages
English (en)
Chinese (zh)
Other versions
TW200951244A (en
Inventor
古田學
亞特奇雷大衛
崔壽永
懷特約翰Ｍ
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW200951244A publication Critical patent/TW200951244A/zh
Application granted granted Critical
Publication of TWI527929B publication Critical patent/TWI527929B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW098109276A 2008-03-20 2009-03-20 具有滾軋成型表面之基座和其製造方法 TWI527929B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3805008P 2008-03-20 2008-03-20

Publications (2)

Publication Number Publication Date
TW200951244A TW200951244A (en) 2009-12-16
TWI527929B true TWI527929B (zh) 2016-04-01

Family

ID=41089127

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098109276A TWI527929B (zh) 2008-03-20 2009-03-20 具有滾軋成型表面之基座和其製造方法

Country Status (6)

Country Link
US (1) US9243328B2 (https=)
JP (1) JP5745394B2 (https=)
KR (1) KR101588566B1 (https=)
CN (1) CN101978473B (https=)
TW (1) TWI527929B (https=)
WO (1) WO2009117514A1 (https=)

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* Cited by examiner, † Cited by third party
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US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
GB201709446D0 (en) * 2017-06-14 2017-07-26 Semblant Ltd Plasma processing apparatus
CN109881184B (zh) * 2019-03-29 2022-03-25 拓荆科技股份有限公司 具有静电力抑制的基板承载装置
CN112387798B (zh) * 2019-08-13 2024-05-14 青岛海尔多媒体有限公司 用于制作电子设备外壳的方法及系统
TWI887322B (zh) 2020-01-06 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、抬升銷、及處理方法

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US5531835A (en) * 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US6089182A (en) * 1995-08-17 2000-07-18 Tokyo Electron Limited Plasma processing apparatus
JP2901536B2 (ja) * 1996-02-28 1999-06-07 山形日本電気株式会社 サセプタ
KR100203780B1 (ko) * 1996-09-23 1999-06-15 윤종용 반도체 웨이퍼 열처리 장치
JP3160229B2 (ja) * 1997-06-06 2001-04-25 日本エー・エス・エム株式会社 プラズマｃｖｄ装置用サセプタ及びその製造方法
JP2002113536A (ja) * 2000-10-04 2002-04-16 Toyota Motor Corp 成形素材の成形性向上方法およびその装置
US6634882B2 (en) * 2000-12-22 2003-10-21 Asm America, Inc. Susceptor pocket profile to improve process performance
KR100375984B1 (ko) * 2001-03-06 2003-03-15 삼성전자주식회사 플레이트 어셈블리 및 이를 갖는 가공 장치
JP2004154814A (ja) * 2002-11-06 2004-06-03 Shooei Shoji:Kk 加工金属板材料
EP1615261B8 (en) * 2003-04-02 2019-09-18 SUMCO Corporation Semiconductor wafer heat treatment jig
JP2004321848A (ja) * 2003-04-21 2004-11-18 Ngk Insulators Ltd ハニカム構造体及びその製造方法
US20040221959A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
US8372205B2 (en) * 2003-05-09 2013-02-12 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
JP2004342834A (ja) * 2003-05-15 2004-12-02 Seiko Epson Corp 基板載置トレイ
JP2006019572A (ja) * 2004-07-02 2006-01-19 Ricoh Co Ltd 半導体製造装置及び半導体製造方法
JP2006173259A (ja) * 2004-12-14 2006-06-29 Ricoh Co Ltd サセプター及びその製造方法及び半導体製造装置
KR100750968B1 (ko) * 2005-06-07 2007-08-22 주식회사 알지비하이텍 플라즈마화학적기상증착 기구 내의 서셉터 구조
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KR100755874B1 (ko) * 2005-11-30 2007-09-05 주식회사 아이피에스 진공처리장치의 정전척, 그를 가지는 진공처리장치 및정전척의 제조방법
JP5122741B2 (ja) * 2005-12-01 2013-01-16 パナソニック株式会社 システムキッチン用シンク又はカウンター
JP2007168245A (ja) * 2005-12-21 2007-07-05 Fujifilm Corp 感光性シート及びその製造方法と装置
KR200412959Y1 (ko) * 2006-01-24 2006-04-05 (주)포인트엔지니어링 반도체 및 액정표시장치의 투명유리기판 제조용 플레이트
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JP4597894B2 (ja) * 2006-03-31 2010-12-15 東京エレクトロン株式会社 基板載置台および基板処理装置
US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing

Also Published As

Publication number Publication date
KR101588566B1 (ko) 2016-01-26
US20090238734A1 (en) 2009-09-24
US9243328B2 (en) 2016-01-26
JP5745394B2 (ja) 2015-07-08
KR20100126533A (ko) 2010-12-01
WO2009117514A1 (en) 2009-09-24
CN101978473B (zh) 2015-11-25
TW200951244A (en) 2009-12-16
CN101978473A (zh) 2011-02-16
JP2011515854A (ja) 2011-05-19

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