TWI524151B - 酸敏感顯影劑可溶之底部抗反射塗層 - Google Patents
酸敏感顯影劑可溶之底部抗反射塗層 Download PDFInfo
- Publication number
- TWI524151B TWI524151B TW099104952A TW99104952A TWI524151B TW I524151 B TWI524151 B TW I524151B TW 099104952 A TW099104952 A TW 099104952A TW 99104952 A TW99104952 A TW 99104952A TW I524151 B TWI524151 B TW I524151B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- layer
- composition
- terpolymer
- acid
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15390909P | 2009-02-19 | 2009-02-19 | |
| US12/708,630 US8383318B2 (en) | 2009-02-19 | 2010-02-19 | Acid-sensitive, developer-soluble bottom anti-reflective coatings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201035690A TW201035690A (en) | 2010-10-01 |
| TWI524151B true TWI524151B (zh) | 2016-03-01 |
Family
ID=42630241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099104952A TWI524151B (zh) | 2009-02-19 | 2010-02-22 | 酸敏感顯影劑可溶之底部抗反射塗層 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8383318B2 (enExample) |
| EP (1) | EP2399169B1 (enExample) |
| JP (1) | JP5840954B2 (enExample) |
| KR (1) | KR101668505B1 (enExample) |
| CN (1) | CN102395925B (enExample) |
| SG (1) | SG173730A1 (enExample) |
| TW (1) | TWI524151B (enExample) |
| WO (1) | WO2010096615A2 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11201404229YA (en) | 2012-01-19 | 2014-08-28 | Brewer Science Inc | Nonpolymeric antireflection compositions containing adamantyl groups |
| US9261786B2 (en) | 2012-04-02 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photosensitive material and method of photolithography |
| KR102115442B1 (ko) | 2012-04-23 | 2020-05-28 | 브레우어 사이언스 인코포레이션 | 감광성의 현상제-가용성 하부 반사-방지 코팅 재료 |
| US9213234B2 (en) | 2012-06-01 | 2015-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photosensitive material and method of lithography |
| US9012132B2 (en) | 2013-01-02 | 2015-04-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Coating material and method for photolithography |
| US9159559B2 (en) * | 2013-03-11 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography layer with quenchers to prevent pattern collapse |
| US9146469B2 (en) | 2013-03-14 | 2015-09-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Middle layer composition for trilayer patterning stack |
| KR101988193B1 (ko) * | 2013-11-08 | 2019-06-11 | 도쿄엘렉트론가부시키가이샤 | 화학적 폴리싱 및 평탄화를 위한 방법 |
| TWI575566B (zh) | 2014-02-24 | 2017-03-21 | 東京威力科創股份有限公司 | 與光敏化化學放大光阻化學品及程序一起使用的方法及技術 |
| JP6895600B2 (ja) * | 2014-02-25 | 2021-06-30 | 東京エレクトロン株式会社 | 現像可能な底部反射防止コーティングおよび着色インプラントレジストのための化学増幅方法および技術 |
| JP6509496B2 (ja) * | 2014-04-08 | 2019-05-08 | アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ | 下層膜形成用組成物 |
| US9754791B2 (en) * | 2015-02-07 | 2017-09-05 | Applied Materials, Inc. | Selective deposition utilizing masks and directional plasma treatment |
| KR102374049B1 (ko) * | 2015-06-02 | 2022-03-14 | 삼성전자주식회사 | 포토레지스트를 이용한 패턴 형성 방법 |
| WO2017141612A1 (ja) * | 2016-02-15 | 2017-08-24 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜及びパターニングされた基板の製造方法 |
| US10048594B2 (en) | 2016-02-19 | 2018-08-14 | Tokyo Electron Limited | Photo-sensitized chemically amplified resist (PS-CAR) model calibration |
| US10429745B2 (en) | 2016-02-19 | 2019-10-01 | Osaka University | Photo-sensitized chemically amplified resist (PS-CAR) simulation |
| TWI657314B (zh) | 2016-05-13 | 2019-04-21 | 東京威力科創股份有限公司 | 藉由使用光敏化學品或光敏化學增幅型光阻劑之臨界尺寸控制 |
| WO2017197288A1 (en) | 2016-05-13 | 2017-11-16 | Tokyo Electron Limited | Critical dimension control by use of a photo agent |
| US11768435B2 (en) * | 2018-11-02 | 2023-09-26 | Brewer Science, Inc. | Bottom-up conformal coating and photopatterning on PAG-immobilized surfaces |
| KR102751329B1 (ko) | 2019-03-28 | 2025-01-07 | 삼성전자주식회사 | 반사방지막 형성용 폴리머 및 조성물과 반사방지막을 이용하는 집적회로 소자의 제조 방법 |
| DE102019134535B4 (de) | 2019-08-05 | 2023-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Materialien für unteren antireflexbelag |
| US11782345B2 (en) | 2019-08-05 | 2023-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bottom antireflective coating materials |
| WO2021034567A1 (en) | 2019-08-16 | 2021-02-25 | Tokyo Electron Limited | Method and process for stochastic driven defectivity healing |
| US20230420401A1 (en) * | 2022-06-28 | 2023-12-28 | Rohm And Haas Electronic Materials Llc | Metallization method |
| US20240201591A1 (en) * | 2022-11-28 | 2024-06-20 | Rohm And Haas Electronic Materials Korea Ltd. | Photoresist underlayer composition |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3165043D1 (en) | 1980-06-11 | 1984-08-30 | Battelle Memorial Institute | Unsaturated esters of adamantane containing diols and thermo-resistant cross-linked polymers therefrom |
| US6054254A (en) * | 1997-07-03 | 2000-04-25 | Kabushiki Kaisha Toshiba | Composition for underlying film and method of forming a pattern using the film |
| JPH1172925A (ja) * | 1997-07-03 | 1999-03-16 | Toshiba Corp | 下層膜用組成物およびこれを用いたパターン形成方法 |
| US6844131B2 (en) * | 2002-01-09 | 2005-01-18 | Clariant Finance (Bvi) Limited | Positive-working photoimageable bottom antireflective coating |
| JP4344212B2 (ja) * | 2003-10-16 | 2009-10-14 | 丸善石油化学株式会社 | 共重合体、共重合体の製造方法及び新規チオール化合物 |
| JP2005234168A (ja) * | 2004-02-19 | 2005-09-02 | Daicel Chem Ind Ltd | 反射防止膜形成用樹脂組成物、反射防止膜の形成方法及び半導体の製造方法 |
| US20050214674A1 (en) * | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
| US20050255410A1 (en) * | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
| JP2006089412A (ja) | 2004-09-24 | 2006-04-06 | Idemitsu Kosan Co Ltd | アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料 |
| JP4575214B2 (ja) * | 2005-04-04 | 2010-11-04 | 信越化学工業株式会社 | レジスト下層膜材料およびパターン形成方法 |
| EP1720072B1 (en) * | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
| US20070105040A1 (en) * | 2005-11-10 | 2007-05-10 | Toukhy Medhat A | Developable undercoating composition for thick photoresist layers |
| US7919222B2 (en) * | 2006-01-29 | 2011-04-05 | Rohm And Haas Electronics Materials Llc | Coating compositions for use with an overcoated photoresist |
| EP1845416A3 (en) * | 2006-04-11 | 2009-05-20 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for photolithography |
| EP1906249A3 (en) * | 2006-09-26 | 2008-12-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflective coating compositions for photolithography |
| US9645494B2 (en) * | 2006-12-13 | 2017-05-09 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition containing low molecular weight dissolution accelerator |
| JP2008281990A (ja) * | 2007-02-28 | 2008-11-20 | Rohm & Haas Electronic Materials Llc | 新規なポリマーおよびフォトレジスト組成物 |
| JP5106911B2 (ja) * | 2007-04-13 | 2012-12-26 | 株式会社ダイセル | 重合体及びそれを用いた反射防止膜形成組成物 |
| US20090098490A1 (en) * | 2007-10-16 | 2009-04-16 | Victor Pham | Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing |
| US8088548B2 (en) * | 2007-10-23 | 2012-01-03 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions |
| US9638999B2 (en) * | 2008-02-22 | 2017-05-02 | Brewer Science Inc. | Dual-layer light-sensitive developer-soluble bottom anti-reflective coatings for 193-nm lithography |
| JP2010113035A (ja) * | 2008-11-04 | 2010-05-20 | Daicel Chem Ind Ltd | 下層膜用重合体、下層膜用組成物及び半導体の製造方法 |
| US8455176B2 (en) * | 2008-11-12 | 2013-06-04 | Az Electronic Materials Usa Corp. | Coating composition |
-
2010
- 2010-02-19 US US12/708,630 patent/US8383318B2/en active Active
- 2010-02-19 CN CN201080008975.9A patent/CN102395925B/zh active Active
- 2010-02-19 KR KR1020117021875A patent/KR101668505B1/ko active Active
- 2010-02-19 EP EP10744334.3A patent/EP2399169B1/en active Active
- 2010-02-19 JP JP2011551236A patent/JP5840954B2/ja active Active
- 2010-02-19 SG SG2011059177A patent/SG173730A1/en unknown
- 2010-02-19 WO PCT/US2010/024664 patent/WO2010096615A2/en not_active Ceased
- 2010-02-22 TW TW099104952A patent/TWI524151B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2399169A4 (en) | 2012-10-10 |
| EP2399169A2 (en) | 2011-12-28 |
| SG173730A1 (en) | 2011-09-29 |
| WO2010096615A2 (en) | 2010-08-26 |
| US8383318B2 (en) | 2013-02-26 |
| CN102395925B (zh) | 2015-06-03 |
| EP2399169B1 (en) | 2019-04-17 |
| JP2012518812A (ja) | 2012-08-16 |
| US20100213580A1 (en) | 2010-08-26 |
| KR101668505B1 (ko) | 2016-10-28 |
| WO2010096615A3 (en) | 2010-12-09 |
| KR20110137316A (ko) | 2011-12-22 |
| JP5840954B2 (ja) | 2016-01-06 |
| CN102395925A (zh) | 2012-03-28 |
| TW201035690A (en) | 2010-10-01 |
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