SG11201404229YA - Nonpolymeric antireflection compositions containing adamantyl groups - Google Patents
Nonpolymeric antireflection compositions containing adamantyl groupsInfo
- Publication number
- SG11201404229YA SG11201404229YA SG11201404229YA SG11201404229YA SG11201404229YA SG 11201404229Y A SG11201404229Y A SG 11201404229YA SG 11201404229Y A SG11201404229Y A SG 11201404229YA SG 11201404229Y A SG11201404229Y A SG 11201404229YA SG 11201404229Y A SG11201404229Y A SG 11201404229YA
- Authority
- SG
- Singapore
- Prior art keywords
- nonpolymeric
- compositions containing
- adamantyl groups
- containing adamantyl
- antireflection
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/006—Anti-reflective coatings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/76—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/76—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
- C07C69/94—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of polycyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D303/00—Compounds containing three-membered rings having one oxygen atom as the only ring hetero atom
- C07D303/02—Compounds containing oxirane rings
- C07D303/12—Compounds containing oxirane rings with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms
- C07D303/18—Compounds containing oxirane rings with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms by etherified hydroxyl radicals
- C07D303/20—Ethers with hydroxy compounds containing no oxirane rings
- C07D303/22—Ethers with hydroxy compounds containing no oxirane rings with monohydroxy compounds
- C07D303/23—Oxiranylmethyl ethers of compounds having one hydroxy group bound to a six-membered aromatic ring, the oxiranylmethyl radical not being further substituted, i.e.
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/02—Ortho- or ortho- and peri-condensed systems
- C07C2603/04—Ortho- or ortho- and peri-condensed systems containing three rings
- C07C2603/22—Ortho- or ortho- and peri-condensed systems containing three rings containing only six-membered rings
- C07C2603/24—Anthracenes; Hydrogenated anthracenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/58—Ring systems containing bridged rings containing three rings
- C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
- C07C2603/74—Adamantanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31511—Of epoxy ether
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31511—Of epoxy ether
- Y10T428/31525—Next to glass or quartz
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31511—Of epoxy ether
- Y10T428/31529—Next to metal
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261588268P | 2012-01-19 | 2012-01-19 | |
PCT/US2013/021932 WO2013109748A1 (en) | 2012-01-19 | 2013-01-17 | Nonpolymeric antireflection compositions containing adamantyl groups |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201404229YA true SG11201404229YA (en) | 2014-08-28 |
Family
ID=48796396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201404229YA SG11201404229YA (en) | 2012-01-19 | 2013-01-17 | Nonpolymeric antireflection compositions containing adamantyl groups |
Country Status (8)
Country | Link |
---|---|
US (1) | US9328246B2 (en) |
EP (1) | EP2805347B1 (en) |
JP (1) | JP6410256B2 (en) |
KR (1) | KR102017360B1 (en) |
CN (1) | CN104137235B (en) |
SG (1) | SG11201404229YA (en) |
TW (1) | TWI587094B (en) |
WO (1) | WO2013109748A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104428379B (en) | 2012-04-23 | 2019-11-01 | 布鲁尔科技公司 | Light sensitivity, the bottom anti-reflective coating material for dissolving in developer |
TWI574348B (en) * | 2013-11-14 | 2017-03-11 | 羅門哈斯電子材料有限公司 | Gap-fill methods |
CN106384719B (en) * | 2015-08-06 | 2020-06-23 | 王贝贝 | Processing method for etching black phosphorus two-dimensional material body by using oxygen plasma |
TWI662370B (en) | 2015-11-30 | 2019-06-11 | 南韓商羅門哈斯電子材料韓國公司 | Coating compositions for use with an overcoated photoresist |
US10079152B1 (en) * | 2017-02-24 | 2018-09-18 | Canon Kabushiki Kaisha | Method for forming planarized etch mask structures over existing topography |
EP3651606A4 (en) * | 2017-07-14 | 2021-06-30 | Glisten LLC | Gemstone coatings and methods of making and using the same |
US10604618B2 (en) | 2018-06-20 | 2020-03-31 | Shin-Etsu Chemical Co., Ltd. | Compound, method for manufacturing the compound, and composition for forming organic film |
WO2020150109A1 (en) * | 2019-01-14 | 2020-07-23 | Glisten Llc | Molecular coatings and methods of making and using the same |
KR20230148608A (en) * | 2022-04-18 | 2023-10-25 | 한남대학교 산학협력단 | Surface modified metal oxide and ink composition comprising the same |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5858618A (en) * | 1996-12-02 | 1999-01-12 | Nan Ya Plastics Corporation | Photopolymerizable resinous composition |
US7323289B2 (en) * | 2002-10-08 | 2008-01-29 | Brewer Science Inc. | Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties |
JP4665189B2 (en) | 2003-10-03 | 2011-04-06 | ナガセケムテックス株式会社 | Alkali-soluble resin |
TW200519081A (en) * | 2003-10-03 | 2005-06-16 | Nagase Chemtex Corp | An alkali soluble resin |
JP4769455B2 (en) * | 2003-12-30 | 2011-09-07 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Coating composition |
JP2005263264A (en) | 2004-03-18 | 2005-09-29 | Tokyo Ohka Kogyo Co Ltd | Container for photoresist composition |
JP4491283B2 (en) | 2004-06-10 | 2010-06-30 | 信越化学工業株式会社 | Pattern formation method using antireflection film-forming composition |
JP4421566B2 (en) * | 2005-12-26 | 2010-02-24 | チェイル インダストリーズ インコーポレイテッド | Hard mask composition for photoresist underlayer film and method of manufacturing semiconductor integrated circuit device using the same |
JP5122982B2 (en) * | 2006-01-27 | 2013-01-16 | 出光興産株式会社 | ADAMANTAN DERIVATIVE, RESIN COMPOSITION CONTAINING THE SAME, OPTICAL ELECTRONIC MEMBER USING THEM, AND ELECTRONIC CIRCUIT SEALING AGENT |
US7960483B2 (en) * | 2006-02-17 | 2011-06-14 | Idemitsu Kosan Co., Ltd. | Adamantane derivative, composition comprising the derivative, and optical and electronic member using the composition |
EP2014691A1 (en) * | 2006-04-28 | 2009-01-14 | Idemitsu Kosan Co., Ltd. | Adamantyl group-containing epoxy-modified (meth)acrylate and resin composition containing the same |
KR20090005338A (en) * | 2006-04-28 | 2009-01-13 | 이데미쓰 고산 가부시키가이샤 | Fluorine-containing adamantane derivative, fluorine-containing adamantane derivative having polymerizable group, resin composition containing the same, and antireflection film |
JP5134233B2 (en) * | 2006-11-29 | 2013-01-30 | 出光興産株式会社 | ADAMANTAN DERIVATIVE, PROCESS FOR PRODUCING THE SAME AND RESIN COMPOSITION CONTAINING ADAMANTAN DERIVATIVE |
KR101477981B1 (en) * | 2007-06-11 | 2014-12-31 | 미쓰비시 가가꾸 가부시키가이샤 | Photosensitive color resin composition for color filter, color filter, liquid crystal display, and organic el display |
JP5337983B2 (en) * | 2007-09-19 | 2013-11-06 | 日産化学工業株式会社 | Lithographic resist underlayer film forming composition comprising a polymer having a polycyclic aliphatic ring |
JP5122229B2 (en) * | 2007-09-28 | 2013-01-16 | クラレノリタケデンタル株式会社 | Polymerizable adamantane derivative and dental composition |
DE112009000979B4 (en) * | 2008-04-23 | 2014-12-11 | Brewer Science, Inc. | Photosensitive hardmask for microlithography |
US7932018B2 (en) * | 2008-05-06 | 2011-04-26 | Az Electronic Materials Usa Corp. | Antireflective coating composition |
US20100040838A1 (en) * | 2008-08-15 | 2010-02-18 | Abdallah David J | Hardmask Process for Forming a Reverse Tone Image |
JP2010186174A (en) * | 2009-01-16 | 2010-08-26 | Mitsubishi Chemicals Corp | Method for manufacturing color filter, color filter, and use thereof |
WO2010096615A2 (en) | 2009-02-19 | 2010-08-26 | Brewer Science Inc. | Acid-sensitive, developer-soluble bottom anti-reflective coatings |
JP2010224158A (en) * | 2009-03-23 | 2010-10-07 | Idemitsu Kosan Co Ltd | Composition containg (meth)acrylate compound and photosensitive resin laminate formed by using the same |
JP5229044B2 (en) * | 2009-03-26 | 2013-07-03 | Jsr株式会社 | Resist underlayer film forming composition, resist underlayer film, resist underlayer film forming method, and pattern forming method |
JP2010250180A (en) * | 2009-04-17 | 2010-11-04 | Idemitsu Kosan Co Ltd | Photosensitive composition containing adamantane derivative |
JP5352340B2 (en) * | 2009-05-13 | 2013-11-27 | 株式会社タムラ製作所 | Photosensitive resin composition, solder resist composition for printed wiring board, and printed wiring board |
WO2011125326A1 (en) | 2010-04-07 | 2011-10-13 | 三菱瓦斯化学株式会社 | Method for purifying alkylnaphthalene formaldehyde polymer |
CN102311346B (en) * | 2011-06-20 | 2014-06-25 | 常州大学 | Adamantane-containing resin as well as preparation method and application thereof |
CN104428379B (en) * | 2012-04-23 | 2019-11-01 | 布鲁尔科技公司 | Light sensitivity, the bottom anti-reflective coating material for dissolving in developer |
-
2013
- 2013-01-17 WO PCT/US2013/021932 patent/WO2013109748A1/en active Application Filing
- 2013-01-17 US US13/743,965 patent/US9328246B2/en active Active
- 2013-01-17 EP EP13738476.4A patent/EP2805347B1/en active Active
- 2013-01-17 SG SG11201404229YA patent/SG11201404229YA/en unknown
- 2013-01-17 CN CN201380010902.7A patent/CN104137235B/en active Active
- 2013-01-17 JP JP2014553407A patent/JP6410256B2/en active Active
- 2013-01-17 KR KR1020147021741A patent/KR102017360B1/en active IP Right Grant
- 2013-01-18 TW TW102102173A patent/TWI587094B/en active
Also Published As
Publication number | Publication date |
---|---|
JP6410256B2 (en) | 2018-10-24 |
US20130186851A1 (en) | 2013-07-25 |
KR102017360B1 (en) | 2019-09-02 |
US9328246B2 (en) | 2016-05-03 |
EP2805347B1 (en) | 2018-03-07 |
TWI587094B (en) | 2017-06-11 |
WO2013109748A1 (en) | 2013-07-25 |
EP2805347A4 (en) | 2015-07-22 |
EP2805347A1 (en) | 2014-11-26 |
CN104137235B (en) | 2017-02-22 |
KR20150034122A (en) | 2015-04-02 |
JP2015507223A (en) | 2015-03-05 |
CN104137235A (en) | 2014-11-05 |
TW201344370A (en) | 2013-11-01 |
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