KR101668505B1 - 산-민감성, 현상제-용해성 바닥부 반사방지 코팅 - Google Patents

산-민감성, 현상제-용해성 바닥부 반사방지 코팅 Download PDF

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KR101668505B1
KR101668505B1 KR1020117021875A KR20117021875A KR101668505B1 KR 101668505 B1 KR101668505 B1 KR 101668505B1 KR 1020117021875 A KR1020117021875 A KR 1020117021875A KR 20117021875 A KR20117021875 A KR 20117021875A KR 101668505 B1 KR101668505 B1 KR 101668505B1
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antireflective
layer
group
composition
polymer
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KR20110137316A (ko
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짐 디. 메도
조이스 에이. 로웨스
라밀-마르셀로 엘. 메르카도
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브레우어 사이언스 인코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020117021875A 2009-02-19 2010-02-19 산-민감성, 현상제-용해성 바닥부 반사방지 코팅 Active KR101668505B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15390909P 2009-02-19 2009-02-19
US61/153,909 2009-02-19
PCT/US2010/024664 WO2010096615A2 (en) 2009-02-19 2010-02-19 Acid-sensitive, developer-soluble bottom anti-reflective coatings

Publications (2)

Publication Number Publication Date
KR20110137316A KR20110137316A (ko) 2011-12-22
KR101668505B1 true KR101668505B1 (ko) 2016-10-28

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Country Status (8)

Country Link
US (1) US8383318B2 (enExample)
EP (1) EP2399169B1 (enExample)
JP (1) JP5840954B2 (enExample)
KR (1) KR101668505B1 (enExample)
CN (1) CN102395925B (enExample)
SG (1) SG173730A1 (enExample)
TW (1) TWI524151B (enExample)
WO (1) WO2010096615A2 (enExample)

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KR20240079161A (ko) * 2022-11-28 2024-06-04 듀폰스페셜티머터리얼스코리아 유한회사 포토레지스트 하층 조성물

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EP2805347B1 (en) 2012-01-19 2018-03-07 Brewer Science, Inc. Nonpolymeric antireflection compositions containing adamantyl groups
US9261786B2 (en) 2012-04-02 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Photosensitive material and method of photolithography
WO2013163100A1 (en) 2012-04-23 2013-10-31 Brewer Science Inc. Photosensitive, developer-soluble bottom anti-reflective coating material
US9213234B2 (en) 2012-06-01 2015-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Photosensitive material and method of lithography
US9012132B2 (en) 2013-01-02 2015-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Coating material and method for photolithography
US9159559B2 (en) * 2013-03-11 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography layer with quenchers to prevent pattern collapse
US9146469B2 (en) 2013-03-14 2015-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Middle layer composition for trilayer patterning stack
KR101988193B1 (ko) * 2013-11-08 2019-06-11 도쿄엘렉트론가부시키가이샤 화학적 폴리싱 및 평탄화를 위한 방법
US9618848B2 (en) 2014-02-24 2017-04-11 Tokyo Electron Limited Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes
DE112015000546T5 (de) * 2014-02-25 2016-11-10 Tokyo Electron Limited Chemische Verstärkungsverfahren und -methoden für entwickelbare untere Antireflexbeläge und gefärbte Implantationsresists
JP6509496B2 (ja) * 2014-04-08 2019-05-08 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 下層膜形成用組成物
US9754791B2 (en) * 2015-02-07 2017-09-05 Applied Materials, Inc. Selective deposition utilizing masks and directional plasma treatment
KR102374049B1 (ko) * 2015-06-02 2022-03-14 삼성전자주식회사 포토레지스트를 이용한 패턴 형성 방법
KR102697916B1 (ko) 2016-02-15 2024-08-23 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 조성물, 레지스트 하층막 및 패터닝된 기판의 제조 방법
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
JP6750155B2 (ja) 2016-05-13 2020-09-02 東京エレクトロン株式会社 光剤を用いた限界寸法制御
WO2017197279A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist
WO2020092963A1 (en) * 2018-11-02 2020-05-07 Brewer Science, Inc. Bottom-up conformal coating and photopatterning on pag-immobilized surfaces
KR102751329B1 (ko) 2019-03-28 2025-01-07 삼성전자주식회사 반사방지막 형성용 폴리머 및 조성물과 반사방지막을 이용하는 집적회로 소자의 제조 방법
DE102019134535B4 (de) 2019-08-05 2023-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Materialien für unteren antireflexbelag
US11782345B2 (en) 2019-08-05 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom antireflective coating materials
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
US20230420401A1 (en) * 2022-06-28 2023-12-28 Rohm And Haas Electronic Materials Llc Metallization method

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JP4858725B2 (ja) * 2006-12-13 2012-01-18 日産化学工業株式会社 低分子溶解促進剤を含むレジスト下層膜形成組成物
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US20090098490A1 (en) * 2007-10-16 2009-04-16 Victor Pham Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
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JP2010113035A (ja) * 2008-11-04 2010-05-20 Daicel Chem Ind Ltd 下層膜用重合体、下層膜用組成物及び半導体の製造方法
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KR20240079161A (ko) * 2022-11-28 2024-06-04 듀폰스페셜티머터리얼스코리아 유한회사 포토레지스트 하층 조성물
KR102829720B1 (ko) * 2022-11-28 2025-07-03 듀폰스페셜티머터리얼스코리아 유한회사 포토레지스트 하층 조성물

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Publication number Publication date
EP2399169A2 (en) 2011-12-28
TWI524151B (zh) 2016-03-01
US8383318B2 (en) 2013-02-26
JP5840954B2 (ja) 2016-01-06
CN102395925B (zh) 2015-06-03
SG173730A1 (en) 2011-09-29
WO2010096615A2 (en) 2010-08-26
US20100213580A1 (en) 2010-08-26
CN102395925A (zh) 2012-03-28
EP2399169A4 (en) 2012-10-10
EP2399169B1 (en) 2019-04-17
JP2012518812A (ja) 2012-08-16
WO2010096615A3 (en) 2010-12-09
KR20110137316A (ko) 2011-12-22
TW201035690A (en) 2010-10-01

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