TWI518707B - 使用含酸組成物之零件形成方法 - Google Patents

使用含酸組成物之零件形成方法 Download PDF

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Publication number
TWI518707B
TWI518707B TW099106068A TW99106068A TWI518707B TW I518707 B TWI518707 B TW I518707B TW 099106068 A TW099106068 A TW 099106068A TW 99106068 A TW99106068 A TW 99106068A TW I518707 B TWI518707 B TW I518707B
Authority
TW
Taiwan
Prior art keywords
silver
acid
nanoparticle
nanoparticles
conductivity
Prior art date
Application number
TW099106068A
Other languages
English (en)
Chinese (zh)
Other versions
TW201035995A (en
Inventor
吳怡良
馬席亞 摩可塔里
Original Assignee
全錄股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 全錄股份有限公司 filed Critical 全錄股份有限公司
Publication of TW201035995A publication Critical patent/TW201035995A/zh
Application granted granted Critical
Publication of TWI518707B publication Critical patent/TWI518707B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
    • B01D69/02—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor characterised by their properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
    • B01D69/08—Hollow fibre membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/022—Metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Thin Film Transistor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
TW099106068A 2009-03-05 2010-03-03 使用含酸組成物之零件形成方法 TWI518707B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/398,611 US7935278B2 (en) 2009-03-05 2009-03-05 Feature forming process using acid-containing composition

Publications (2)

Publication Number Publication Date
TW201035995A TW201035995A (en) 2010-10-01
TWI518707B true TWI518707B (zh) 2016-01-21

Family

ID=42269678

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099106068A TWI518707B (zh) 2009-03-05 2010-03-03 使用含酸組成物之零件形成方法

Country Status (7)

Country Link
US (1) US7935278B2 (enExample)
EP (1) EP2228155B1 (enExample)
JP (1) JP5525285B2 (enExample)
KR (1) KR101569943B1 (enExample)
CN (1) CN101901639B (enExample)
CA (1) CA2694777C (enExample)
TW (1) TWI518707B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102470490B (zh) * 2009-07-14 2015-08-05 同和电子科技有限公司 使用金属纳米粒子的接合材料及接合方法
US9137902B2 (en) * 2009-08-14 2015-09-15 Xerox Corporation Process to form highly conductive feature from silver nanoparticles with reduced processing temperature
WO2011155055A1 (ja) * 2010-06-11 2011-12-15 Ｄｏｗａエレクトロニクス株式会社 低温焼結性接合材および該接合材を用いた接合方法
US20120286502A1 (en) * 2011-05-13 2012-11-15 Xerox Corporation Storage Stable Images
US20140170427A1 (en) * 2012-12-13 2014-06-19 Carestream Health, Inc. Anticorrosion agents for transparent conductive film
CN105340370B (zh) * 2013-07-04 2020-03-24 爱克发-格法特公司 制备导电金属层或图案的方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048405A (en) 1976-03-15 1977-09-13 Esb Incorporated High drain rate, primary alkaline cell having a divalent silver oxide/monovalent silver oxide depolarizer blend coated with a layer of silver
US5492653A (en) * 1994-11-07 1996-02-20 Heraeus Incorporated Aqueous silver composition
JP3206496B2 (ja) * 1997-06-02 2001-09-10 昭栄化学工業株式会社 金属粉末及びその製造方法
US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
JP4377003B2 (ja) * 1999-07-23 2009-12-02 日本曹達株式会社 透明導電膜のシート抵抗値の調整方法及び透明導電膜の形成方法
JP4162342B2 (ja) * 1999-12-21 2008-10-08 株式会社荏原製作所 透明導電性フィルム及びその製造方法
US6621099B2 (en) 2002-01-11 2003-09-16 Xerox Corporation Polythiophenes and devices thereof
US6949762B2 (en) 2002-01-11 2005-09-27 Xerox Corporation Polythiophenes and devices thereof
US6770904B2 (en) 2002-01-11 2004-08-03 Xerox Corporation Polythiophenes and electronic devices generated therefrom
US7736693B2 (en) * 2002-06-13 2010-06-15 Cima Nanotech Israel Ltd. Nano-powder-based coating and ink compositions
JP4219822B2 (ja) * 2003-01-14 2009-02-04 シャープ株式会社 配線材料、配線基板及びその製造方法並びに表示パネル
DE20311760U1 (de) 2003-07-30 2003-12-11 Trw Automotive Safety Systems Gmbh Fahrzeuglenkrad
US20050129843A1 (en) 2003-12-11 2005-06-16 Xerox Corporation Nanoparticle deposition process
US7270694B2 (en) * 2004-10-05 2007-09-18 Xerox Corporation Stabilized silver nanoparticles and their use
EP1896634B1 (en) * 2005-06-10 2013-04-17 Cima Nano Tech Israel Ltd. Enhanced transparent conductive coatings and methods for making them
JP5096771B2 (ja) * 2007-03-23 2012-12-12 三菱製紙株式会社 導電性発現方法
US7491646B2 (en) * 2006-07-20 2009-02-17 Xerox Corporation Electrically conductive feature fabrication process
JP5151150B2 (ja) * 2006-12-28 2013-02-27 株式会社日立製作所 導電性焼結層形成用組成物、これを用いた導電性被膜形成法および接合法
US7737497B2 (en) * 2007-11-29 2010-06-15 Xerox Corporation Silver nanoparticle compositions

Also Published As

Publication number Publication date
EP2228155A3 (en) 2011-11-23
CA2694777A1 (en) 2010-09-05
US7935278B2 (en) 2011-05-03
EP2228155B1 (en) 2014-05-21
KR20100100678A (ko) 2010-09-15
CN101901639B (zh) 2015-10-14
TW201035995A (en) 2010-10-01
EP2228155A2 (en) 2010-09-15
CA2694777C (en) 2013-11-19
CN101901639A (zh) 2010-12-01
KR101569943B1 (ko) 2015-11-17
JP5525285B2 (ja) 2014-06-18
JP2010205731A (ja) 2010-09-16
US20100224837A1 (en) 2010-09-09

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