TWI518366B - 微機電顯示裝置及製造顯示元件之方法 - Google Patents
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- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
- G02B26/023—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light comprising movable attenuating elements, e.g. neutral density filters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0083—Optical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
- G02B26/04—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light by periodically varying the intensity of light, e.g. using choppers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/005—Diaphragms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B9/00—Exposure-making shutters; Diaphragms
- G03B9/02—Diaphragms
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Micromachines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/800,459 US9632307B2 (en) | 2013-03-13 | 2013-03-13 | MEMS shutter assemblies for high-resolution displays |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201502574A TW201502574A (zh) | 2015-01-16 |
| TWI518366B true TWI518366B (zh) | 2016-01-21 |
Family
ID=50390230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103108819A TWI518366B (zh) | 2013-03-13 | 2014-03-12 | 微機電顯示裝置及製造顯示元件之方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9632307B2 (enExample) |
| EP (1) | EP2972553A1 (enExample) |
| JP (1) | JP6216032B2 (enExample) |
| KR (1) | KR101822099B1 (enExample) |
| CN (1) | CN105122115B (enExample) |
| TW (1) | TWI518366B (enExample) |
| WO (1) | WO2014164140A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9134532B2 (en) | 2013-03-13 | 2015-09-15 | Pixtronix, Inc. | MEMS shutter assemblies for high-resolution displays |
| CN105467579B (zh) * | 2016-02-03 | 2017-03-22 | 京东方科技集团股份有限公司 | 一种mems光阀、显示装置 |
| US11460688B2 (en) * | 2019-08-23 | 2022-10-04 | Tohoku University | Mirror device, scanning laser device and scanning laser display including same mirror device, and method for manufacturing mirror device |
| CN114690398A (zh) * | 2020-12-30 | 2022-07-01 | 无锡华润上华科技有限公司 | 一种静电驱动式mems显示屏及其制备方法 |
| US11659759B2 (en) * | 2021-01-06 | 2023-05-23 | Applied Materials, Inc. | Method of making high resolution OLED fabricated with overlapped masks |
| CN116184741A (zh) * | 2023-02-28 | 2023-05-30 | 维沃移动通信有限公司 | 可变光圈模组、摄像装置以及电子设备 |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5062689A (en) | 1990-08-21 | 1991-11-05 | Koehler Dale R | Electrostatically actuatable light modulating device |
| JPH09218360A (ja) | 1996-02-08 | 1997-08-19 | Ricoh Co Ltd | メカニカル光シャッタ |
| WO1999010775A1 (en) | 1997-08-28 | 1999-03-04 | Mems Optical Inc. | System for controlling light including a micromachined foucault shutter array and a method of manufacturing the same |
| US6288824B1 (en) * | 1998-11-03 | 2001-09-11 | Alex Kastalsky | Display device based on grating electromechanical shutter |
| JP2002040337A (ja) | 2000-07-24 | 2002-02-06 | Fuji Photo Film Co Ltd | 光変調素子及びそれを用いた露光装置並びに平面表示装置 |
| JP4383145B2 (ja) * | 2003-10-31 | 2009-12-16 | オプトレックス株式会社 | ライトユニット |
| JP2005221917A (ja) | 2004-02-09 | 2005-08-18 | Fuji Photo Film Co Ltd | 電気機械式光シャッター素子及び光シャッターアレイ |
| US7944599B2 (en) * | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
| US20080158635A1 (en) * | 2005-02-23 | 2008-07-03 | Pixtronix, Inc. | Display apparatus and methods for manufacture thereof |
| US7271945B2 (en) * | 2005-02-23 | 2007-09-18 | Pixtronix, Inc. | Methods and apparatus for actuating displays |
| US7616368B2 (en) | 2005-02-23 | 2009-11-10 | Pixtronix, Inc. | Light concentrating reflective display methods and apparatus |
| US7999994B2 (en) * | 2005-02-23 | 2011-08-16 | Pixtronix, Inc. | Display apparatus and methods for manufacture thereof |
| US8159428B2 (en) * | 2005-02-23 | 2012-04-17 | Pixtronix, Inc. | Display methods and apparatus |
| KR100762627B1 (ko) | 2005-11-17 | 2007-10-01 | 삼성전자주식회사 | 카메라 모듈의 셔터 구동 장치 |
| JP2007179751A (ja) * | 2005-12-26 | 2007-07-12 | Matsushita Electric Works Ltd | 平面発光装置、及び平面発光装置を備えた液晶表示装置 |
| US8526096B2 (en) * | 2006-02-23 | 2013-09-03 | Pixtronix, Inc. | Mechanical light modulators with stressed beams |
| KR20080029552A (ko) * | 2006-09-29 | 2008-04-03 | 삼성전자주식회사 | 액정표시장치 |
| US8169679B2 (en) * | 2008-10-27 | 2012-05-01 | Pixtronix, Inc. | MEMS anchors |
| JP2010181495A (ja) | 2009-02-03 | 2010-08-19 | Seiko Epson Corp | 光制御装置 |
| JP2010210813A (ja) | 2009-03-09 | 2010-09-24 | Seiko Epson Corp | アクチュエーター、光制御装置、電気光学装置、及び電子機器 |
| KR20110133250A (ko) | 2010-06-04 | 2011-12-12 | 삼성전자주식회사 | 입체 영상 표시 장치용 셔터 안경 및 이를 포함하는 입체 영상 표시 시스템, 그리고 입체 영상 표시 시스템의 제조 방법 |
| KR20120102387A (ko) * | 2011-03-08 | 2012-09-18 | 삼성전자주식회사 | 표시 장치와 이의 제조 방법 |
| US8780104B2 (en) | 2011-03-15 | 2014-07-15 | Qualcomm Mems Technologies, Inc. | System and method of updating drive scheme voltages |
| KR20120111809A (ko) * | 2011-04-01 | 2012-10-11 | 삼성디스플레이 주식회사 | 표시장치 |
| CN102279463B (zh) * | 2011-04-18 | 2013-10-23 | 上海丽恒光微电子科技有限公司 | 具有mems光阀的显示装置及其形成方法 |
| KR20120129256A (ko) | 2011-05-19 | 2012-11-28 | 삼성디스플레이 주식회사 | 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 패널 |
| JP5856758B2 (ja) | 2011-05-23 | 2016-02-10 | ピクストロニクス，インコーポレイテッド | 表示装置及びその製造方法 |
| JP2012242795A (ja) | 2011-05-24 | 2012-12-10 | Japan Display East Co Ltd | 表示装置 |
| JP5856759B2 (ja) | 2011-06-03 | 2016-02-10 | ピクストロニクス，インコーポレイテッド | 表示装置 |
| JP2012252188A (ja) * | 2011-06-03 | 2012-12-20 | Japan Display East Co Ltd | 表示装置 |
| KR20130021104A (ko) * | 2011-08-22 | 2013-03-05 | 삼성디스플레이 주식회사 | 표시 기판 및 이의 제조 방법 |
| US9809445B2 (en) | 2011-08-26 | 2017-11-07 | Qualcomm Incorporated | Electromechanical system structures with ribs having gaps |
| KR20130072847A (ko) * | 2011-12-22 | 2013-07-02 | 삼성디스플레이 주식회사 | 표시 장치와 이의 제조 방법 |
| US9235046B2 (en) | 2013-01-30 | 2016-01-12 | Pixtronix, Inc. | Low-voltage MEMS shutter assemblies |
| US20140225904A1 (en) * | 2013-02-13 | 2014-08-14 | Pixtronix, Inc. | Shutter assemblies fabricated on multi-height molds |
| US9134552B2 (en) * | 2013-03-13 | 2015-09-15 | Pixtronix, Inc. | Display apparatus with narrow gap electrostatic actuators |
| US9134532B2 (en) | 2013-03-13 | 2015-09-15 | Pixtronix, Inc. | MEMS shutter assemblies for high-resolution displays |
| US9134530B2 (en) | 2013-03-13 | 2015-09-15 | Pixtronix, Inc. | Display apparatus incorporating dual-level shutters |
| US9176317B2 (en) | 2013-03-13 | 2015-11-03 | Pixtronix, Inc. | Display apparatus incorporating dual-level shutters |
| US9195051B2 (en) | 2013-03-15 | 2015-11-24 | Pixtronix, Inc. | Multi-state shutter assembly for use in an electronic display |
| US20140327948A1 (en) | 2013-05-06 | 2014-11-06 | Pixtronix, Inc. | Display elements incorporating asymmetric apertures |
-
2013
- 2013-03-13 US US13/800,459 patent/US9632307B2/en not_active Expired - Fee Related
-
2014
- 2014-03-05 JP JP2016500670A patent/JP6216032B2/ja not_active Expired - Fee Related
- 2014-03-05 EP EP14713672.5A patent/EP2972553A1/en not_active Withdrawn
- 2014-03-05 CN CN201480013554.3A patent/CN105122115B/zh not_active Expired - Fee Related
- 2014-03-05 WO PCT/US2014/020796 patent/WO2014164140A1/en not_active Ceased
- 2014-03-05 KR KR1020157027975A patent/KR101822099B1/ko not_active Expired - Fee Related
- 2014-03-12 TW TW103108819A patent/TWI518366B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014164140A1 (en) | 2014-10-09 |
| EP2972553A1 (en) | 2016-01-20 |
| KR20150128878A (ko) | 2015-11-18 |
| CN105122115B (zh) | 2018-02-09 |
| CN105122115A (zh) | 2015-12-02 |
| US9632307B2 (en) | 2017-04-25 |
| JP2016516215A (ja) | 2016-06-02 |
| TW201502574A (zh) | 2015-01-16 |
| JP6216032B2 (ja) | 2017-10-18 |
| US20140268272A1 (en) | 2014-09-18 |
| KR101822099B1 (ko) | 2018-01-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |