TWI517231B - 在用於晶粒附著之基板上之環氧樹脂塗佈 - Google Patents

在用於晶粒附著之基板上之環氧樹脂塗佈 Download PDF

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TWI517231B
TWI517231B TW101116088A TW101116088A TWI517231B TW I517231 B TWI517231 B TW I517231B TW 101116088 A TW101116088 A TW 101116088A TW 101116088 A TW101116088 A TW 101116088A TW I517231 B TWI517231 B TW I517231B
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pane
substrate
epoxy
die
panel
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TW101116088A
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TW201314756A (zh
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顧偉
呂忠
雪柯 巴葛特
邱進添
漢 塔基亞
劉向陽
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晟碟半導體（上海）有限公司
晟碟信息技術（上海）有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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Description

在用於晶粒附著之基板上之環氧樹脂塗佈
本發明技術係關於半導體裝置之製造。
對便攜式消費型電子器件之需求之強勁增長正驅動對高容量儲存裝置之需要。諸如快閃記憶體儲存卡之非揮發性半導體記憶體裝置正變得廣泛用於滿足對數位資訊儲存及交換之不斷增長之需求。其便攜性、多功能性及強健設計連同其高可靠性及大容量已使此等記憶體裝置理想地用於各種各樣之電子裝置，包含(例如)數位相機、數位音樂播放器、視訊遊戲控制臺、PDA及蜂巢式電話。
一半導體記憶體裝置通常由諸如一印刷電路板之一基板組成，該基板經蝕刻以包含具有接觸墊及電跡線之一導電圖案。大量半導體晶粒一起形成於一半導體晶圓上，且然後被切割為個別半導體晶粒。然後將一或多個半導體晶粒接合至基板，且在該一或多個半導體晶粒上之晶粒接合墊與該基板之接觸墊之間形成電連接。然後可經由導電圖案在一或多個半導體晶粒與一外部主機裝置之間傳送信號。
晶粒附著膜(DAF)通常用於將半導體晶粒接合至基板。通常，在切割個別半導體晶粒之前，將DAF附著至一完整半導體晶圓背部(非作用)面。然後在DAF上方施加一切割捲帶以將各別晶粒在切割後固持在一起。在施加DAF及切割捲帶之後，可用(例如)一切割機分割該晶圓。在分割過程期間，可能出現諸如一DAF毛刺或錨效應等問題。一錨 效應係在DAF被刀片分割時DAF壓入切割捲帶中之現象。DAF錨效應可增加拾取切割後之晶粒所需之負載，且可導致晶粒破裂或有缺損的拾取。
現在將參照圖1至圖22闡述關於一半導體裝置之實施例，該半導體裝置包含經由施加至基板之一面板上之一環氧樹脂層接合至一基板之一半導體晶粒。應瞭解，本發明可按諸多不同形式體現，而不應視為僅限於本文所陳述之實施例。相反地，提供該等實施例以使得此揭示內容將透徹及完整，且將把本發明全面傳達給熟習此項技術者。實際上，本發明意欲涵蓋此等實施例之替代、修改及等效形式，該等實施例之替代、修改及等效形式仍歸屬於由隨附申請專利範圍所定義之本發明之範疇及精神內。此外，在本發明之以下詳細說明中，陳述大量特定細節以提供對本發明之一透徹理解。然而，熟習此項技術者將明瞭，無需該等特定細節亦可實施本發明。
在本文中僅出於方便及例示性之目的使用術語「頂部」、「底部」、「上部」、「下部」、「垂直」及/或「平行」，且不意欲限定本發明之說明，乃因所引用之物項可交換位置。
現在將參照圖1之流程圖及圖2與圖3之俯視圖來闡述形成本系統使用之半導體晶粒之一製程。圖2展示一半導體晶圓100之一俯視圖，該晶圓用於批次處理複數個半導體晶粒102(其一者係在圖2中標示)。圖3展示如下文所闡釋 之自晶圓100切割之一半導體晶粒102。半導體晶粒102之積體電路組件可在步驟200中藉由諸如膜沈積、光微影、圖案化及雜質擴散等習知製程形成於晶圓100上。在實施例中，晶粒102可係諸如NAND快閃記憶體晶粒之記憶體晶粒。然而，在進一步之實施例中，晶粒102可係其他類型之半導體晶粒，諸如(舉例而言)NOR、DRAM及各種其他記憶體晶粒。
積體電路之形成可包含晶粒接合墊104(其一者係在圖3中標示)藉由習知製程之形成，該等習知製程包含但不限於電鍍、蒸發塗層、絲網印刷或各種沈積製程。接合墊104用於將半導體晶粒102電耦合至另一半導體晶粒或電耦合至一印刷電路板、引線框或如下文闡釋之另一基板上。圖3中所展示之接合墊104係僅出於例示性目的，且沿晶粒102之一邊緣可存在比圖3中所展示之更多或更少之接合墊。此外，儘管接合墊104係展示為沿兩個邊緣，但在進一步之實施例中，可沿一個、三個邊緣或四個邊緣提供接合墊104。
在步驟204中，將包含積體電路之晶圓100之頂部(作用)表面黏上捲帶用於一背磨製程。在步驟206中，可將黏好捲帶之表面支撐於一卡盤上，且可在晶圓100之背部(非作用)表面上執行背磨製程，如熟習此項技術者所熟知，以將晶粒102薄化至所要厚度。在步驟210中，可測試晶圓100上之晶粒102是否有功能缺陷。舉例而言，該等測試包含晶圓最終測試、電子晶粒分類及電路探測。
在步驟212中，可自背磨卡盤轉移該晶圓，且可將一切割捲帶施加至晶圓100之非作用表面。在步驟216中，可將晶粒之背部表面支撐於一卡盤上，且可自晶圓切割晶粒102中之每一者。切割過程可涉及沿毗鄰晶粒102之間的邊界之一第一組垂直分割(自圖2及圖3之角度)，及沿毗鄰晶粒102之間的邊界之一第二組水平分割(亦自圖2及圖3之角度)。在替代實施例中，水平切割可在垂直切割之前進行。切割步驟可藉由一切割刀片或藉由雷射來執行。如下文所闡釋，在切割步驟完成時，即可拾取晶粒並將其置於一基板上。由於不存在施加至晶圓100之任何DAF捲帶，因此可避免與DAF毛刺相關聯之困難。
圖4及圖5之流程圖展示用於根據本系統形成一基板面板及用於將晶粒102安裝於該基板面板上之步驟。圖6展示包含複數個基板112(其一者係在圖6中編號)之一基板面板110之一俯視圖。在下文所展示及闡述之實例中，舉例而言，基板112可係印刷電路板(PCB)，但在進一步之實施例中，基板可係引線框或捲帶式自動接合(TAB)捲帶。下文闡述一單個基板112之形成。應瞭解，下列闡述針對面板110上之每一基板發生。
每一基板112可係由具有頂部導電層及/或底部導電層之一芯形成。該芯可係由各種介電材料形成，諸如(舉例而言)聚醯亞胺積層、包含FR4及FR5之環氧樹脂、雙馬來醯亞胺三嗪(BT)等等。儘管該芯對本發明並不關鍵，但其可具有40微米(μm)至200 μm之間的一厚度，但在替代實施例 中，芯之厚度可在彼範圍之外變化。在替代實施例中，該芯可係陶瓷或有機的。
圍繞該芯之導電層可係由銅或銅合金、鍍銅或鍍銅合金、鍍銅鋼、或已知用於基板面板上之其他金屬及材料形成。導電層可具有約10 μm至25 μm之一厚度，但在替代實施例中，該等層之厚度可在彼範圍之外變化。
在步驟220中，芯上之一或兩個導電層可經蝕刻成如所習知之一導電圖案，用於在半導體晶粒102與一外部裝置(未展示)之間傳送信號。所蝕刻之導電圖案可包含在基板112之一上部表面上之電跡線116及接觸墊120。如所習知，亦可提供孔124用於將信號傳送至基板112之不同層。當半導體裝置係一地柵陣列(LGA)封裝時，亦可在基板112之一較低表面上界定接觸指狀物(未展示)。如熟習此項技術者已知曉，可將一焊料遮罩層施加至基板112之頂部或底部表面，且舉例而言，在一電鍍製程中，接觸墊120及/或接觸指狀物可電鍍有一或多個金層。
在步驟224中，可將表面安裝組件焊接至基板112之接觸墊120。該等表面安裝組件可包含諸如電阻器、電容器及/或電感器等被動裝置。在步驟228中，焊料可在一習知回流製程中回流。
在步驟230中，可將一晶粒附著環氧樹脂層噴灑至面板110上之每一基板112上。參照圖5之流程圖及圖8至圖22之不同視圖來闡釋步驟230之進一步細節。在步驟270中，將基板面板110定位於一環氧樹脂噴灑台中之一桌上。在步 驟274中，將一窗格夾130定位於基板面板上。在圖8至圖11中展示一窗格夾130之一實例。該窗格夾可由諸如(舉例而言)不銹鋼(等級440C)之金屬組成，但亦可使用其他剛性金屬。窗格夾130可包含具有在任一側上之凸緣134及136(圖8及圖11)之一窗格區段132。窗格區段132可包含複數個窗格138，該複數個窗格係形成於夾130上且完全穿過夾130之開口。
在實施例中，在窗格區段132中可有一單行窗格138，且窗格138之數目可匹配面板110上之一行中的基板112之數目。在所展示之實施例中，在面板110上之一行中有四個基板112，且在窗格夾130上有四個窗格138。應瞭解，在面板110上之一行中可有更多或更少個基板112，且在窗格夾130上可有對應更多或更少個窗格138。應進一步瞭解，與夾130上之一行窗格138中有的窗格相比，在面板110上之一行中有更大或更小數目個基板112。此外，如下文所闡釋，夾130上可有多行窗格138，以匹配面板110上之基板112之行數或一部分行數。
在實施例中，窗格138中之每一者可係為與如下文闡釋之將安裝於基板112上之半導體晶粒102相同的尺寸及形狀。窗格138可在長度及寬度上對應於可使用之晶粒102之任一長度及寬度。窗格亦可沿與將晶粒102安裝於基板112上之定向相同的定向來定向。每一窗格138係相似地彼此間隔對應於安裝至一行基板112之半導體晶粒102之位置之一距離。
在實施例中，每一窗格138係由垂直於窗格區段132之主平面表面之側壁界定。舉例而言，在窗格138處之窗格區段132之厚度可係0.4 mm。應瞭解，在進一步之實施例中，窗格區段132之主平面表面之間的側壁角度可小於或大於90°。在此等實施例中，窗格138之大小可對應於在窗格區段132之頂部表面處或在窗格區段132之底部表面處之晶粒102之大小。
在步驟274中，將窗格夾130對準基板面板110上方。舉例而言，在環氧樹脂噴灑製程開始時，可將窗格夾130對準圖9中所展示之面板110上之第一(最左邊)行基板112。然後在步驟278中，將液態環氧樹脂穿過窗格138噴灑至基板上。窗格夾130遮蔽基板面板以使得將環氧樹脂僅經由將接納一半導體晶粒102之各別基板上之區域噴灑至一行基板112上。一旦已將環氧樹脂穿過窗格138施加至一行基板上，即可隨之相對於基板面板移動窗格夾130，以使得其定位於下一行基板之上方，且然後將液態環氧樹脂噴灑至下一基板行上。應瞭解，噴灑製程無需經由面板110上之最左行基板112開始，而是可以任一次序進行以將液態環氧樹脂施加至基板112之行上。
在實施例中，當窗格夾130移動時，基板面板110可保持靜止，或當窗格夾130保持靜止時，基板面板110可移動。此過程可重複直至將液態環氧樹脂施加至面板110上之每一基板112為止。
藉由包含光學方式之各種對準方案，窗格夾130可在期 望位置處對準基板面板110上方。在一光學對準實施例中，可使用一發射器與接收器以找出基板面板110中及窗格夾130上之基準孔及/或參考標記，以指示何時面板與夾對準。另外地或另一選擇係，可使用一相機或其他成像裝置，其在在基板面板110及/或窗格夾130移動時使其成像以促進面板與夾之對準。
在實施例中，窗格夾130可由嚙合凸緣134、136之一對保持器支撐。舉例而言，如圖11中所展示，凸緣134、136係自窗格區段132垂直地偏移。因此，保持器能夠在凸緣134、136上方及下方抓緊該等凸緣以將窗格夾130緊固至保持器。在進一步之實施例中，保持器可僅在凸緣134、136下方與窗格夾130嚙合，然後窗格夾130將藉由重力支撐於保持器上。保持器可經支撐以進行平移從而使窗格夾130相對於基板面板110沿x方向(圖9)移動。在進一步之實施例中，保持器可係用於沿x方向及y方向兩者之平移。
凸緣134、136自窗格區段132之垂直偏移允許在窗格區段132抵靠基板面板110放平整時支撐及/或平移窗格夾130。在實施例中，窗格區段132在環氧樹脂噴灑製程期間可抵靠基板面板110放齊平，或窗格區段132可與基板面板110略微間隔開。
圖10及圖11展示用於將一環氧樹脂144施加至窗格夾130上且穿過窗格138之一噴灑頭140。該噴灑頭可係用於施加液態環氧樹脂之一習知流體分配機構，諸如(舉例而言)由Asymtek Carlsbad公司(美國加州，喀斯巴德市(Carlsbad)) 提供之噴灑頭。亦可使用來自其他製造商之噴灑頭。可使用之環氧樹脂之類型係來自Henkel AG & Co.KGaA公司之Ablestik WBC8901-UV晶粒附著環氧樹脂，該公司總部在德國杜賽道夫(Düsseldorf)。亦可使用其他類型之環氧樹脂。
環氧樹脂144可作為一A階段液體而自噴灑頭140施加。如下文所闡釋，環氧樹脂可隨後經歷UV及/或加熱以將環氧樹脂固化至一或多個中間B階段，且然後最終至一完全固化之C階段。當作為一A階段液體施加時，環氧樹脂144可在5 rpm處具有自1,000 cP至10,000 cP之一黏度，其中噴灑頭140維持在一溫度60℃處。應瞭解，此等參數僅係以實例方式，且在進一步之實施例中每一參數可變化。環氧樹脂可穿過窗格138噴灑至基板112上達大約5 μm至50 μm之間的一厚度，但在進一步之實施例中該厚度可高於或低於此範圍而變化。
如圖9及圖10中所指示，噴灑頭140可沿y方向橫穿以每次一個窗格地穿過每一窗格138施加環氧樹脂144。噴灑頭140可向上或向下橫穿一行。窗格區段132之表面處之所噴灑環氧樹脂之直徑d(圖11)至少與窗格138之對應尺寸一樣大(該尺寸橫向於噴灑頭140之行進方向)以確保跨越每一窗格138之整個區域噴灑環氧樹脂。在所展示之實施例中，隨著噴灑頭沿y方向向下橫穿一行，一次一個窗格地施加環氧樹脂噴霧144。然而，預期可將環氧樹脂144同時施加至一個以上窗格138。
上文闡述之實施例係關於具有配置成一行以匹配基板面板上之一行基板之窗格之窗格夾。在一替代實施例中，窗格夾可具有配置成一列以匹配基板面板上之一列基板之窗格。
隨著噴灑頭橫穿窗格區段132中之該行窗格138，所噴灑之環氧樹脂可累積於窗格138之間及其周圍的空間中之窗格區段132上。經過一段時間，此環氧樹脂之堆積可影響環氧樹脂穿過窗格138之施加。因此，在一項實施例中，本系統可在一步驟280中移除噴灑至窗格區段132上之環氧樹脂144。在圖12中展示且在下文闡述用於移除環氧樹脂144之一機構。
圖12圖解說明窗格夾130及將環氧樹脂144噴灑至夾130上之噴灑頭140。圖12進一步展示用於移除噴灑至窗格138周圍之夾上之環氧樹脂144之一清潔跟隨器150。清潔跟隨器150包含經支撐以在兩對軸158上旋轉之一對軋輥154a、154b(在圖12中僅每一對中之一個軸158可見；來自每一對之第二個軸可在其相對端上支撐軋輥154a、154b)。清潔跟隨器150之頂部端(未展示)可具有用於支撐兩對軸158之一基座，及包含用於進給一毛巾160繞過軋輥154a、154b之一驅動馬達之一毛巾進給件。舉例而言，驅動馬達可驅動毛巾160沿z方向繞過後軋輥154b，且然後沿相反方向經過前軋輥154a。在清潔跟隨器150頂部處之毛巾進給件自身可包含一對軋輥，用於將毛巾160之一潔淨區段向下供給至軋輥154b之一供給軋輥，及用於自軋輥154a接納毛巾 160之一已使用區段(包含所移除之環氧樹脂)之一捲取軋輥。
清潔跟隨器150之基座可經支撐以在其橫穿一行窗格138時平移或跟隨噴灑頭140。舉例而言，清潔跟隨器150可安裝至使噴灑頭沿y方向前進之同一平移機構，或清潔跟隨器150可安裝於與噴灑頭140分離之一平移機構上。噴灑頭140可將環氧樹脂噴灑至窗格夾130之邊緣130a，在其上噴灑頭停止噴灑，但噴灑頭可繼續沿y方向平移以允許清潔跟隨器150到達及清潔至窗格夾130之邊緣130a。
在實施例中，毛巾160可係一吸收性纖維布料。支撐軸158將軋輥154a、154b毗鄰窗格區段132之表面定位，以使得毛巾160在其平移以吸收及移除已噴灑至窗格區段132上之環氧樹脂時接觸窗格區段132之表面。
應瞭解，清潔跟隨器150可具有各種各樣之其他組態用於驅動一毛巾跨越窗格區段132之表面以移除已噴灑至窗格區段132上之環氧樹脂。在一項替代實施例中，該清潔跟隨器可包含一單個軋輥154。亦可預期其他機構。此外，在又一實施例中，可完全省略清潔跟隨器150。在此等實施例中，可週期性地更換窗格夾130以防止環氧樹脂在夾130表面上之過量堆積。
圖9展示窗格夾130及已將環氧樹脂144施加至基板112之約三分之二之噴灑頭140(為清晰起見省略清潔跟隨器150)。一旦已將A階段液態環氧樹脂144施加至面板110上之所有基板112，即可在步驟282中將面板110移動至一部 分固化台以將環氧樹脂144部分地固化至一B階段。此部分固化步驟防止環氧樹脂滲出，但仍允許環氧樹脂如下文所闡釋接納一半導體晶粒並將其接合至基板上。固化步驟282可係一UV固化步驟，但在進一步之實施例中，可係一熱固化步驟。
儘管清潔跟隨器150可自窗格夾130之一頂部表面移除環氧樹脂，但環氧樹脂亦可在窗格138之側壁上累積。因此，在實施例中，可週期性地執行一窗格清潔步驟286。圖13及圖14圖解說明包含在一供給軋輥170與一捲取軋輥172之間連接之一毛巾168之一窗格清潔機構164之一實例。捲取軋輥172可由一馬達(未展示)驅動以沿箭頭a之方向在軋輥170、172之間移動毛巾168。
窗格清潔機構164可在窗格夾130與基板面板110分離時(在其中噴灑環氧樹脂144之同一工具中，或在一單獨工具中)清潔窗格夾130之窗格138。窗格清潔機構164進一步包含形成為與窗格138相近之一大小及形狀之一柱塞180。柱塞180可略微小於一窗格138，以在一窗格138之側壁與柱塞180之間為毛巾留下間隔。
在操作中，窗格夾130可支撐於窗格清潔機構164上方，其中一窗格138對準柱塞180上方。然後可向上驅動該柱塞，穿過所對準之窗格138，以使得毛巾168被迫向上穿過窗格。毛巾168接觸窗格之側壁以吸收及移除可能已沈積於側壁上之環氧樹脂。然後可移除柱塞，移動窗格夾130以在柱塞180上方與將清潔之下一個窗格138對準，且此過 程連續重複直至清潔完每一窗格138為止。可週期性地執行此操作，舉例而言，在將環氧樹脂144施加至一整個面板110之後執行。亦可在將環氧樹脂施加至面板110上之一或多行基板上之後執行此操作。在進一步之實施例中，可以其他間隔執行此操作。此外，在又一實施例中，可完全省略窗格清潔機構164。在此等實施例中，可週期性地更換窗格夾130以防止窗格138之側壁內之環氧樹脂之過量堆積。
現在返回至圖4之流程圖，在如上文詳細闡述施加晶粒附著環氧樹脂之後，在步驟234中，可將一晶粒102附接至B階段環氧樹脂144之頂部上之每一基板112。在步驟236中，執行晶粒附著環氧樹脂144之一進一步固化。在實施例中，此進一步固化可係足以將半導體晶粒102接合到位之一中間固化，但尚未到C階段。在進一步之實施例中，進一步固化步驟236可係環氧樹脂144至其最終C階段之一完全固化。當環氧樹脂部分固化未達C階段時，可在處於90℃之一溫度處之一加熱製程中執行固化步驟236達30分鐘之一週期。應瞭解，在進一步之實施例中，此溫度及持續時間可變化。當將環氧樹脂完全固化至C階段時，可在處於175℃之一溫度處之一加熱製程中執行固化步驟236達2小時之一週期。當然，在進一步之實施例中，此溫度及持續時間可變化。
在步驟240中，晶粒102可藉由連接晶粒102上之晶粒接合墊104與基板112上之接觸墊120之間的一導電線而線接 合至基板112。預期可將一或多個額外晶粒安裝至晶粒102之頂部上。若已安裝額外晶粒，則此等晶粒亦可在步驟240中線接合至該基板。圖15展示經由銲線182線接合至基板112之一晶粒102之一邊視圖。一控制器晶粒184亦可安裝於晶粒堆疊之頂部上且在步驟240中線接合至該基板。舉例而言，該控制器晶粒184可係一ASIC，但在進一步之實施例中，亦可係另一控制器晶粒。
在步驟242中，在將堆疊上之晶粒102及任一額外晶粒線接合至基板112之後，可在步驟242中將該晶粒堆疊裝入模製化合物188內。模製化合物188可係一習知環氧樹脂，諸如(舉例而言)可自Sumitomo公司及Nitto Denko公司(該兩個公司總部皆在日本)獲得。
如上文在步驟236中提及，在將晶粒102安裝於基板112上之後，僅可部分固化環氧樹脂144。若如此，則在囊封步驟242之後，可執行一最終固化步驟244以將環氧樹脂144完全固化至一C階段環氧樹脂，此時環氧樹脂凝固。若在步驟236中較早地執行完全C階段環氧樹脂固化，則可省略步驟244。
然後在步驟248中，可自基板面板單粒化經囊封及固化之裝置以形成圖15中所見之成品半導體裝置190。可在步驟250中檢驗及測試成品裝置190。在某些實施例中，成品半導體裝置190可在步驟252中視情況包封於一罩內。
上述窗格夾130可包含一單行窗格138。如所提及，另一選擇係，可有一行以上窗格138。在圖16中展示此一實施 例。在圖16之實施例中，窗格夾130具有四行窗格138之一陣列。若與圖6中展示之基板面板110一起使用，則該面板可放置於左邊第一組16個基板上方(或反之亦然)，且當夾130保持靜止時，所有16個可塗佈有環氧樹脂。然後夾130可移動至右邊第二組16個基板(或反之亦然)，且可塗佈該第二組。預期窗格夾130可具有與面板110上之基板行數相同之行。在此等實施例中，每一行中之窗格與其中將把環氧樹脂施加至每一基板之位置對準。
圖17至圖22圖解說明可提供於窗格夾130上之窗格138之不同實施例。圖17展示上述實施例，其中窗格138匹配將安裝於穿過窗格138施加之環氧樹脂144上之半導體晶粒102之大體大小、形狀及定向。(為清晰起見，在圖17至圖22中之每一者中以虛線展示半導體晶粒102)。在圖18中，窗格138在長度及寬度上比晶粒102小，導致比晶粒區域小的一環氧樹脂區域。窗格138之形狀未必係矩形。在實施例中，窗格138可係圓形、卵形或橢圓形。在圖18之實施例中，拐角係展示為修圓的。
在圖19中，窗格138具有比晶粒102短之一長度，且在圖20中，窗格138具有比晶粒102短之一寬度。
到目前為止，窗格138已被闡述為一整體開口。但在進一步之實施例中未必如此。圖21圖解說明其中窗格138中之開口係對角線狹縫之一實施例。此將致使將環氧樹脂144之條帶施加至晶粒102下方之基板112上。在進一步之實施例中，狹縫可係垂直或水平的。圖22圖解說明其中窗格138 中之開口係圓形孔之一實施例。此將致使將環氧樹脂144之圓施加至晶粒102下方之基板112。亦預期窗格138之進一步組態。
在實施例中，半導體晶粒102可係一或多個快閃記憶體晶片以使得藉助控制器晶粒184可將裝置190用作一快閃記憶體裝置。應瞭解，在本系統之進一步實施例中，裝置190可包含經組態以執行其它功能之半導體晶粒。裝置190可用於複數個標準記憶體卡中，包含而不限於一CompactFlash卡、一SmartMedia卡、一記憶體條、一安全數位卡、一miniSD卡、一microSD卡、一USB記憶體卡及其他。
綜上所述，在實施例中，本發明技術係關於一種基板面板，其包括：複數個基板；及晶粒附著環氧樹脂之複數個離散區域，其係在無半導體晶粒之情況下施加至基板上。
在進一步之實施例中，本發明技術係關於形成一基板面板之一系統，該基板面板包括：包含複數個基板之板，每一基板包含接收一半導體晶粒之一區域，及能接收於板上且包含一或多個窗格之一窗格夾，通過此等窗格環氧樹脂可施加於基板上接收一半導體晶粒之區域。
在進一步之實施例中，本發明技術係關於一種製造一半導體面板之方法，該方法包括以下步驟：(a)在該面板上界定複數個基板，每一基板包含一導電圖案及用於接納一半導體晶粒之一區域；及(b)將一液態環氧樹脂施加至用於接納一半導體晶粒之每一基板之該區域。
在又其他實施例中，本發明技術係關於一種製造一半導體裝置之方法，該方法包括以下步驟：(a)在該面板上界定複數個基板，每一基板包含一導電圖案及用於接納一半導體晶粒之一區域；(b)將一窗格夾定位於該基板面板之至少一部分上方，該窗格夾包含一行窗格與一列窗格中之至少一者；(c)將一液態環氧樹脂穿過該至少一行及一列窗格噴灑至用於接納一半導體晶粒之基板之該等區域上；及(d)將半導體晶粒安裝於在該步驟(c)中接納液態環氧樹脂之基板之該等區域上。
已出於圖解說明及闡述之目的提供對本發明之前述詳細說明。本文不意欲包羅無遺或將本發明限定至所揭示之精確形式。根據上文之教示諸多修改及變化皆係可能的。所述實施例之選擇旨在最佳地闡釋本發明之原理及其實際施加，藉以使其他熟習此項技術者能夠在各種實施例中及藉助適合於所要特定使用之各種修改來最佳地利用本發明。本發明之範疇意欲由隨附申請專利範圍定義。
100‧‧‧晶圓
102‧‧‧半導體晶粒/晶粒
104‧‧‧晶粒接合墊/接合墊
110‧‧‧基板面板/板
112‧‧‧基板
116‧‧‧電跡線
120‧‧‧接觸墊
124‧‧‧孔
130‧‧‧窗格夾/夾
130a‧‧‧邊緣
132‧‧‧窗格區段
134‧‧‧凸緣
136‧‧‧凸緣
138‧‧‧窗格
140‧‧‧噴灑頭
144‧‧‧環氧樹脂/環氧樹脂噴霧
150‧‧‧清潔跟隨器
154a‧‧‧軋輥/前軋輥
154b‧‧‧軋輥/後軋輥
158‧‧‧軸
160‧‧‧毛巾
170‧‧‧供給軋輥/軋輥
172‧‧‧捲取軋輥/軋輥
164‧‧‧窗格清潔機構
168‧‧‧毛巾
180‧‧‧柱塞
182‧‧‧銲線
184‧‧‧控制器晶粒
188‧‧‧模製化合物
190‧‧‧成品半導體裝置/裝置
d‧‧‧環氧樹脂直徑
y‧‧‧方向
z‧‧‧方向
圖1係根據本系統之實施例用於形成一半導體晶粒之一流程圖。
圖2係可藉以製造根據本系統之實施例之複數個半導體晶粒之一半導體晶圓之一俯視圖。
圖3係來自圖2之晶圓之一半導體晶粒之一放大俯視圖。
圖4係針對用於與本系統一起使用之一基板之製造以及使用該基板及半導體晶粒之一半導體裝置之裝配之一流程 圖。
圖5係展示圖4之晶粒附著環氧樹脂步驟之進一步細節之一流程圖。
圖6係根據本發明技術之一基板面板之一俯視圖。
圖7係來自圖6之基板面板之一基板之一放大俯視圖。
圖8係根據本系統之實施例之一窗格夾之一俯視圖。
圖9係根據本發明技術定位於一基板面板上方之一噴灑頭及窗格夾之一俯視圖。
圖10係根據本發明技術定位於一基板面板上方之一噴灑頭及窗格夾之一透視圖。
圖11係根據本發明技術定位於一基板面板上方之一噴灑頭及窗格夾之一邊視圖。
圖12係根據本發明技術定位於一基板面板上方之一噴灑頭、窗格夾及清潔跟隨器之一透視圖。
圖13係經定位以清潔一窗格夾之一窗格之側壁之一窗格清潔機構之一邊視圖。
圖14係清潔一窗格夾之一窗格之側壁之一窗格清潔機構之一邊視圖。
圖15係根據本發明技術之一半導體封裝之一側視圖。
圖16係根據本發明技術之一替代實施例之一窗格夾。
圖17至圖22係按照本發明技術在一窗格夾中之一窗格之不同組態。

Claims (4)

  1. 一種製造一半導體裝置之方法，其包括以下步驟：(a)在面板上界定複數個基板，每一基板包含一導電圖案及用於接納一半導體晶粒之一區域；(b)將一窗格夾(window clamp)定位於該基板面板之至少一部分上方，該窗格夾包含一行及一列窗格中之至少一者；(c)將一A階段(A-stage)液態環氧樹脂穿過該至少一行或一列窗格噴灑至用於接納一半導體晶粒之該等基板之該等區域上；(d)將該A階段環氧樹脂部分地固化至一B階段環氧樹脂；(e)將半導體晶粒安裝於包含該B階段環氧樹脂之該基板之該等區域上；及(f)將該環氧樹脂完全固化至一C階段以將該半導體晶粒附著(affix)至該基板面板。
  2. 如請求項1之方法，其進一步包括以下步驟：該窗格夾遮蔽在用於接納該半導體晶粒之該區域之外的該等基板上之部分以防止將液態環氧樹脂施加至該基板之該等部分。
  3. 如請求項1之方法，其進一步包括移除施加至該窗格夾之環氧樹脂之步驟(g)。
  4. 如請求項1之方法，其中該步驟(c)包括沿該行或列中之一者移動噴灑該環氧樹脂之一噴灑頭以穿過該行或列之該等窗格噴灑該環氧樹脂。
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