TWI516623B - 進行成膜與清淨之真空處理方法 - Google Patents
進行成膜與清淨之真空處理方法 Download PDFInfo
- Publication number
- TWI516623B TWI516623B TW099135588A TW99135588A TWI516623B TW I516623 B TWI516623 B TW I516623B TW 099135588 A TW099135588 A TW 099135588A TW 99135588 A TW99135588 A TW 99135588A TW I516623 B TWI516623 B TW I516623B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing
- time
- film forming
- state
- substrate
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims description 27
- 238000003672 processing method Methods 0.000 title claims description 16
- 239000010409 thin film Substances 0.000 title claims description 6
- 238000012545 processing Methods 0.000 claims description 336
- 239000010408 film Substances 0.000 claims description 148
- 238000000034 method Methods 0.000 claims description 97
- 239000000758 substrate Substances 0.000 claims description 81
- 230000015572 biosynthetic process Effects 0.000 claims description 45
- 230000003111 delayed effect Effects 0.000 claims description 14
- 238000011112 process operation Methods 0.000 claims description 14
- 238000010924 continuous production Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009240886 | 2009-10-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201131002A TW201131002A (en) | 2011-09-16 |
| TWI516623B true TWI516623B (zh) | 2016-01-11 |
Family
ID=43900243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099135588A TWI516623B (zh) | 2009-10-19 | 2010-10-19 | 進行成膜與清淨之真空處理方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5474082B2 (ja) |
| KR (1) | KR101392024B1 (ja) |
| CN (1) | CN102549192B (ja) |
| TW (1) | TWI516623B (ja) |
| WO (1) | WO2011049017A1 (ja) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3193904B2 (ja) * | 1997-08-01 | 2001-07-30 | 株式会社日立国際電気 | 基板搬送制御方法及び基板製品の製造方法 |
| JPH1154590A (ja) * | 1997-08-01 | 1999-02-26 | Kokusai Electric Co Ltd | 基板搬送制御方法 |
| JP2002313789A (ja) * | 2001-04-13 | 2002-10-25 | Matsushita Electric Ind Co Ltd | 電子デバイス製造装置の反応室クリーニング方法 |
| JP4076762B2 (ja) * | 2001-11-29 | 2008-04-16 | 東京エレクトロン株式会社 | 半導体ウエハ処理装置 |
| JP2006313934A (ja) * | 2006-07-24 | 2006-11-16 | Hitachi Kokusai Electric Inc | 半導体製造装置および半導体製造装置の成膜処理方法 |
-
2010
- 2010-10-15 JP JP2011537224A patent/JP5474082B2/ja active Active
- 2010-10-15 WO PCT/JP2010/068148 patent/WO2011049017A1/ja active Application Filing
- 2010-10-15 CN CN201080047047.3A patent/CN102549192B/zh active Active
- 2010-10-15 KR KR1020127010000A patent/KR101392024B1/ko active IP Right Grant
- 2010-10-19 TW TW099135588A patent/TWI516623B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5474082B2 (ja) | 2014-04-16 |
| CN102549192B (zh) | 2014-09-24 |
| WO2011049017A1 (ja) | 2011-04-28 |
| TW201131002A (en) | 2011-09-16 |
| CN102549192A (zh) | 2012-07-04 |
| JPWO2011049017A1 (ja) | 2013-03-14 |
| KR20120056876A (ko) | 2012-06-04 |
| KR101392024B1 (ko) | 2014-05-07 |
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