TWI516179B - Copper pillars and methods for their manufacture - Google Patents
Copper pillars and methods for their manufacture Download PDFInfo
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- TWI516179B TWI516179B TW100105954A TW100105954A TWI516179B TW I516179 B TWI516179 B TW I516179B TW 100105954 A TW100105954 A TW 100105954A TW 100105954 A TW100105954 A TW 100105954A TW I516179 B TWI516179 B TW I516179B
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- Prior art keywords
- copper
- column
- wire
- pillar
- copper wire
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 276
- 239000010949 copper Substances 0.000 title claims description 192
- 229910052802 copper Inorganic materials 0.000 title claims description 181
- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 238000000034 method Methods 0.000 title claims description 7
- 238000000137 annealing Methods 0.000 claims description 44
- 238000005520 cutting process Methods 0.000 claims description 37
- 229910000679 solder Inorganic materials 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 23
- 238000005491 wire drawing Methods 0.000 claims description 21
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000004381 surface treatment Methods 0.000 claims description 12
- 238000003825 pressing Methods 0.000 claims description 9
- 150000001412 amines Chemical class 0.000 claims description 8
- 239000012756 surface treatment agent Substances 0.000 claims description 8
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 7
- 229910020220 Pb—Sn Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 88
- 239000000919 ceramic Substances 0.000 description 46
- 239000011521 glass Substances 0.000 description 44
- 239000004593 Epoxy Substances 0.000 description 43
- 230000008646 thermal stress Effects 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 230000035882 stress Effects 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 238000005482 strain hardening Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910016338 Bi—Sn Inorganic materials 0.000 description 2
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- UZHDGDDPOPDJGM-UHFFFAOYSA-N Stigmatellin A Natural products COC1=CC(OC)=C2C(=O)C(C)=C(CCC(C)C(OC)C(C)C(C=CC=CC(C)=CC)OC)OC2=C1O UZHDGDDPOPDJGM-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000007545 Vickers hardness test Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- B21J15/00—Riveting
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- B21J15/147—Composite articles
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- B21K—MAKING FORGED OR PRESSED METAL PRODUCTS, e.g. HORSE-SHOES, RIVETS, BOLTS OR WHEELS
- B21K1/00—Making machine elements
- B21K1/44—Making machine elements bolts, studs, or the like
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- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
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Description
本發明係關於將陶瓷基板與玻璃環氧基板加以接合的銅柱及其製造方法。
近年來,隨著通訊機器的通訊速度的高速化、積體電路的高密度化,有在該等所使用的電子零件的引腳數變多的傾向。例如,在以往係存在有QFP(Quad Flat Package,四方扁平封裝)、SOIC(Small Outline Integrated Circuit,小型塑封積體電路)等引腳數較多的電子零件,但是在近來具有更多功能化的電子零件中,即使為QFP及SOIC等,亦引腳數為不足。因此,以增多引腳數的電子零件而言,逐漸使用BGA(Ball Grid Array,球狀柵格陣列)。在該BGA係有PBGA(Plastic Ball Grid Array,塑膠球狀柵格陣列)、TBGA(Tape Ball Grid Array,帶狀球狀柵格陣列)及CBGA(Ceramic Ball Grid Array,陶瓷球狀柵格陣列)等各種種類。尤其,CBGA係大部分被使用在超級電腦等,被要求高可靠性。
CBGA係由陶瓷基板及印刷基板(例如玻璃環氧基板等)所構成,藉由電壓施加而發熱。因該發熱,陶瓷基板及玻璃環氧基板會膨脹。此外,若解除對CBGA施加電壓,陶瓷基板及玻璃環氧基板即會收縮。如上所示,陶瓷基板及玻璃環氧基板係藉由對CBGA施加電壓及解除該施加而反覆膨脹及收縮。
一般而言,陶瓷基板的熱膨脹係數為8ppm/℃,玻璃環氧基板的熱膨脹係數為15~20ppm/℃。因此,因陶瓷基板的熱膨脹與玻璃環氧基板的熱膨脹的差而起,在陶瓷基板及玻璃環氧基板會發生熱應力。因此,近年來,逐漸使用以吸收熱應力的能力優於焊料球的柱所形成的陶瓷柱柵格陣列(以下稱為CGA)來取代CBGA。
針對將CGA的形成及CGA安裝在玻璃環氧基板的一般方法加以說明。雖未圖示,首先在陶瓷基板的電極部塗佈焊膏。接著,在陶瓷基板之上置放用以在該電極部垂直載置柱的裝載治具。接著,使柱貫穿被穿設在裝載治具的貫穿孔,使柱立設在電極上的焊膏中。在保持該狀態下投入在如迴焊爐所示的加熱裝置,而以預定溫度條件進行加熱。如此一來,塗佈在陶瓷基板的電極部的焊膏會熔融,而使陶瓷基板與柱焊接而形成CGA。
為了在玻璃環氧基板安裝CGA,首先,在玻璃環氧基板的電極部塗佈焊膏。接著,在該電極部載置CGA的柱之後,以迴焊爐進行加熱。如此一來,焊膏熔融,柱與玻璃環氧基板被焊接,而在玻璃環氧基板安裝CGA。如上所示,至將CGA安裝在玻璃環氧基板為止,藉由迴焊爐予以二度加熱。
因此,為了柱不會因迴焊爐所致的二度加熱而熔融,此外,為了柱不會因來自被裝載在超級電腦等的IC晶片的發熱而熔融,在CGA的柱係大部分使用高溫焊料。
此外,柱係將陶瓷基板與玻璃環氧基板相連接,因此若該柱較硬,亦會有因上述熱應力,而在陶瓷基板與柱的接合部、玻璃環氧基板與柱的接合部及柱本身發生裂痕、或發生破斷的情形。因此,柱所使用的高溫焊料係使用較軟的材料,俾以吸收熱應力,例如使用維氏硬度(Vickers hardness)較低的95Pb-5Sn或89.5Pb-10.5Sn等Pb(鉛)膏的Pb-Sn焊料。
但是,基於對現今環境問題的顧慮,而圖求一種未含有Pb之所謂無鉛類型的柱。在被作為Pb-Sn焊料的替代品的焊料,已知有:使Cu(銅)與Sn(錫)起反應所形成的Cu3Sn或Cu6Sn5等金屬間化合物、或以Bi(鉍)為主成分的Bi-Sn焊料等。
但是,Cu3Sn或Cu6Sn5等金屬間化合物或Bi-Sn焊料等由於硬且脆,因此若如CGA般作為陶瓷基板與玻璃環氧基板所接合的柱來加以使用時,無法吸收熱應力,如上所述,會在陶瓷基板與柱的接合部、玻璃環氧基板與柱的接合部及柱本身發生裂痕、或發生破斷。
以焊料以外的柱的材料而言,已知有使用導電性及熱傳導性良好的Cu(銅)的銅柱。在專利文獻1中係揭示一種非為CGA用但是為防止氧化而在Cu予以鍍敷的電接腳。藉由該電接腳,在硬化性樹脂內保持在銅線作Sn或Fe鍍敷後的多數接腳構件,將該所保持的接腳構件的一端作Cu鍍敷,將另一端載置在陶瓷基板。接著,將硬化性樹脂及Sn或Fe鍍敷進行蝕刻,藉此使接腳構件立設而連接在陶瓷基板。
此外,在專利文獻2中係揭示一種非為CGA用但是將Cu加熱而將殘留應力去除的接腳。藉由該接腳,將銅線的一端進行衝壓而形成頭部,將形成有該頭部的銅線以600℃~900℃加熱5分鐘。藉由該加熱,來去除因衝壓所產生的加工變形所造成的殘留應力。
【專利文獻1】日本特開平2-275660號公報
【專利文獻2】日本特開2002-289729號公報
但是,若將Pb-Sn焊料與Cu作比較,Cu的維氏硬度為110~120HV,相對於此,Pb-Sn焊料的維氏硬度為3HV,因此Cu遠比Pb-Sn焊料為硬。因此,習知的銅柱係無法吸收在陶瓷基板及玻璃環氧基板所發生的熱應力,會有在陶瓷基板與柱的接合部及玻璃環氧基板與柱的接合部發生裂痕的問題。
專利文獻1所記載的電接腳係使用如上所述維氏硬度為110~120HV的Cu,在該電接腳的端面形成有Cu鍍敷,因此會變得更硬,而無法適用作為CGA。
此外,專利文獻2所記載的接腳係進行熱處理而使因衝壓所產生的加工變形所造成的殘留應力去除,但是並未被軟化直到可適用於CGA為止。
因此,本發明係解決如上所示之習知例之課題者,目的在提供防止陶瓷基板與玻璃環氧基板的接合的破壞,可適用於CGA的銅柱及其製造方法。
本發明人等發現,若將在拉線步驟、切斷步驟及衝壓步驟等中加工硬化後的銅線以預定溫度及時間進行退火時,維氏硬度會成為55HV以下,即不易在陶瓷基板與銅柱的接合部及玻璃環氧基板與銅柱的接合部發生裂痕,而完成本發明。
為了解決上述課題,請求項1之銅柱,係將陶瓷基板與玻璃環氧基板加以接合的銅柱,其特徵在於:維氏硬度為55HV以下。
請求項2之銅柱,係將陶瓷基板與玻璃環氧基板加以接合之經鍍敷的銅柱,其特徵在於:維氏硬度為55HV以下。
在請求項1及2之銅柱中,由於銅柱的維氏硬度為55HV以下,因此當將陶瓷基板與玻璃環氧基板透過該銅柱進行接合時,可吸收因陶瓷基板的熱膨脹與玻璃環氧基板的熱膨脹的差而起的熱應力。
請求項3之銅柱之製造方法係具有:為了將銅線形成為預定直徑而進行拉線的拉線步驟、及將在拉線步驟中所拉線的銅線切斷成預定長度的切斷步驟,該銅柱之製造方法之特徵在於:具有退火步驟,其係將在切斷步驟中所切斷的銅線,在加熱溫度為600℃以上、保持60分鐘以上而進行退火。
在請求項3之銅柱之製造方法中係具有:為了將銅線形成為預定直徑而進行拉線的拉線步驟、及將在拉線步驟中所拉線的銅線切斷成預定長度的切斷步驟。以此為前提,具有退火步驟,其係將在切斷步驟中所切斷的銅線,在加熱溫度為600℃以上、保持60分鐘以上而進行退火。
銅線係在拉線步驟及切斷步驟中,該銅線的銅組織作塑性變形而產生加工硬化。但是,該經加工硬化的銅線係在退火步驟中,該銅線的銅組織再結晶化而使結晶粒成長,柔軟性變佳。藉此,銅柱的維氏硬度成為55HV以下,而可軟化銅柱。
請求項4之銅柱之製造方法係具有:為了將銅線形成為預定直徑而進行拉線的拉線步驟、及將在拉線步驟中所拉線的銅線切斷成預定長度的切斷步驟;及將在切斷步驟中所切斷的銅線的一端朝向長邊方向進行衝壓而形成銅柱構件的衝壓步驟,該銅柱之製造方法之特徵在於:具有退火步驟,其係將在衝壓步驟中所形成的銅柱構件,在加熱溫度為600℃以上,保持60分鐘以上而進行退火。
在請求項4之銅柱之製造方法中係具有:為了將銅線形成為預定直徑而進行拉線的拉線步驟、及將在拉線步驟中所拉線的銅線切斷成預定長度的切斷步驟;及將在切斷步驟中所切斷的銅線的一端朝向長邊方向進行衝壓而形成銅柱構件的衝壓步驟。以此為前提,具有退火步驟,其係將在衝壓步驟中所形成的銅柱構件,在加熱溫度為600℃以上,保持60分鐘以上而進行退火。
銅柱構件係在拉線步驟、切斷步驟及衝壓步驟中,該銅柱構件的銅組織作塑性變形而產生加工硬化。但是,該經加工硬化的銅柱構件係在退火步驟中,該銅柱構件的銅組織再結晶化而使結晶粒成長,柔軟性變佳。藉此,銅柱的維氏硬度成為55HV以下,可軟化銅柱。
請求項5之銅柱之製造方法係在請求項3或4之記載中,具有表面處理步驟,其係以胺系表面處理劑將在退火步驟中所退火的銅線或銅柱構件進行表面處理。
在請求項5之銅柱之製造方法中,由於以胺系表面處理劑將銅線或銅柱構件進行表面處理,因此將該銅線或銅柱構件的表面變得粗糙而可容易附著鍍敷液。
請求項6之銅柱之製造方法係在請求項3至5中任一項之記載中,具有鍍敷步驟,其係以甲磺酸系的鍍敷液來將在退火步驟中所退火的銅線或銅柱構件、或在表面處理步驟中經表面處理的銅線或銅柱構件進行鍍敷。
在請求項6之銅柱之製造方法中,由於以甲磺酸系的鍍敷液來將銅線或銅柱構件進行鍍敷,因此可將銅柱防銹。
藉由本發明之銅柱,由於吸收因陶瓷基板的熱膨脹與玻璃環氧基板的熱膨脹的差而起的熱應力,因此可防止陶瓷基板與玻璃環氧基板的接合的破壞。
藉由本發明之銅柱之製造方法,由於可軟化銅柱,因此在將陶瓷基板與玻璃環氧基板透過該銅柱進行接合時,可利用該銅柱來吸收因陶瓷基板的熱膨脹與玻璃環氧基板的熱膨脹的差而起的熱應力。結果,可防止陶瓷基板與玻璃環氧基板的接合的破壞。
如第1A圖、第1B圖所示,本發明之銅柱30係透過焊料圓角60而將陶瓷基板40與玻璃環氧基板50相接合。銅柱30係藉由以下步驟所形成者:為了將成形為線形狀的銅線且由無氧銅所構成的銅線形成為預定直徑而進行拉線的拉線步驟;將在拉線步驟中所拉線的銅線切斷成預定長度的切斷步驟;將在切斷步驟中所切斷的銅線的一端朝向長邊方向進行衝壓而形成銅柱構件的衝壓步驟;將在衝壓步驟中所形成的銅柱構件在加熱溫度為600℃以上保持60分鐘以上而進行退火的退火步驟;以胺系表面處理劑將在退火步驟中所退火的銅柱構件進行表面處理的表面處理步驟;及以甲磺酸系的鍍敷液將在表面處理步驟中經表面處理的銅柱構件進行鍍敷的鍍敷步驟。
銅柱30係在拉線步驟、切斷步驟及衝壓步驟中,該銅柱30的銅組織塑性變形而產生加工硬化。但是,該經加工硬化的銅柱30係在退火步驟中,該銅柱30的銅組織再結晶化而使結晶粒成長,柔軟性會變佳。藉此,銅柱30的維氏硬度為55HV以下。
如上所示,藉由上述銅柱之製造方法,維氏硬度會成為55HV以下,可軟化銅柱30。因此,當將陶瓷基板40與玻璃環氧基板50透過該銅柱30而相接合時,可藉由該銅柱30來吸收因陶瓷基板40的熱膨脹與玻璃環氧基板50的熱膨脹的差而起的熱應力。結果,可防止陶瓷基板40與銅柱30的接合部、及玻璃環氧基板50與銅柱30的接合部的裂痕或破斷等的發生。
此外,由於以胺系表面處理劑將在退火步驟中進行退火的銅柱構件進行表面處理,因此使該銅柱構件的表面變得粗糙,可容易附著鍍敷液。此外,由於以甲磺酸系的鍍敷液將在表面處理步驟中經表面處理的銅柱構件進行鍍敷,因此可使銅柱防銹。
以下,參照圖示,說明銅柱之製造方法作為本發明之實施形態之一例。
首先係針對銅柱30之製造方法之拉線步驟、切斷步驟及衝壓步驟加以說明。本實施形態之銅線10係以預先在拉線步驟中予以拉線為前提。拉線係指在敲打銅線側面之後,通過模具,藉此拉長銅線而形成為預定直徑的處理。
如第2A圖所示,銅柱構件的製造裝置100係由銅線導引部1及銅線切斷部2所構成。在銅線導引部1係連接有未圖示的銅線供給部。銅線供給部係使例如被多重捲繞有銅線10的捲軸旋轉,而對銅線導引部1供給銅線10(例如朝第2A圖的左箭號方向供給銅線10)。
銅線導引部1係具備有導引路徑1a,其具有僅稍微大於銅線10的直徑的直徑。銅線導引部1係將藉由銅線供給部的捲軸進行旋轉所被供給的銅線10,沿著導引路徑1a滑動而導引至銅線切斷部2。
在銅線導引部1係鄰接設有銅線切斷部2。銅線切斷部2係具有導引路徑2a及柱頭成形部2b。導引路徑2a係與導引路徑1a同樣地,具有僅稍微大於銅線10的直徑的直徑。亦即,導引路徑2a係具有與導引路徑1a相同的直徑。柱頭成形部2b係具有與柱頭部30b大致相同的形狀,俾以將在第5A圖、第5B圖中將於後述的柱頭部30b進行成形。
銅線切斷部2係因銅線供給部的捲軸更加旋轉,將由銅線導引部1所被導引的銅線10沿著導引路徑2a滑動而導引至柱頭成形部2b,使銅線10的前端由柱頭成形部2b突出預定距離。
如第2B圖所示,銅線切斷部2係相對銅線10的搬送方向呈直角移動銅線10的直徑的一半程度(在第2B圖中係朝下箭號的方向移動)。該移動係用以防止在後述第2C圖的銅線切斷時由切斷部發生毛邊者,預先朝與銅線的軸呈直角方向(下方)以銅線的直徑的一半提供破斷應力。
如第2C圖所示,銅線切斷部2係朝與上述銅線10的直徑的一半程度的移動方向相反180度的方向移動預定距離(在第2C圖中係朝上箭號的方向移動)。如此一來,銅線10即被切斷(剪斷)。
如第3A圖所示,擊錘3朝向柱頭成形部2b移動(在第3A圖中係朝右箭號的方向移動)。如此一來,擊錘3衝撞到由柱頭成形部2b突出預定距離的銅線10的一端,該衝撞的銅線10藉由柱頭成形部2b而被成形成柱頭部20b的形狀(所謂的衝壓加工),釘形狀的銅柱構件20即完成。
如第3B圖所示,擊錘3由柱頭成形部2b分離(在第3B圖中係朝左箭號的方向移動)。接著,銅線切斷部2即返回至切斷銅線10之前所待機的位置(在第3B圖中係朝下箭號方向移動)。
如第3C圖所示,由於銅線供給部的捲軸進行旋轉,原本在導引路徑2a及柱頭成形部2b待機的銅柱構件20即以銅線10被按出。如此一來,銅柱構件20由銅線切斷部2被排出。該所被排出的銅柱構件20係藉由未圖示的托架等予以回收。
如上所示所製造的銅柱構件20係藉由上述拉線步驟、衝壓步驟及切斷步驟,該銅柱構件20的銅組織作塑性變形而發生加工硬化。該銅柱構件20的維氏硬度為110~120HV。
接著,針對銅柱30之製造方法之退火步驟加以說明。以銅柱構件的製造裝置100予以製造的銅柱構件20係被投入在退火爐,以第4圖所示之溫度分佈予以退火。第4圖的縱軸係退火爐內的溫度(℃),橫軸係從將銅柱構件20投入在退火爐之後的經過時間(分鐘)。
如第4圖所示,銅柱構件20的溫度分佈係以室溫至670℃的升溫時間為52分鐘、670℃下的保持時間為90分鐘、670℃至室溫的冷卻時間為39分鐘所構成。經退火的銅柱構件20係該銅柱構件20的銅組織再結晶化而使結晶粒成長,而使柔軟性提升。藉此,銅柱構件20的維氏硬度為55HV以下。
接著,針對銅柱30之製造方法之表面處理步驟及鍍敷步驟加以說明。如上所述將所退火的銅柱構件20以胺系表面處理劑來處理表面。如此一來,銅柱構件20的表面會變得粗糙,而變得容易附著鍍敷液。
以甲磺酸系的鍍敷液將以胺系表面處理劑予以表面處理後的銅柱構件20進行鍍敷。如此一來,銅柱構件20的表面由Sn所覆蓋的銅柱30即完成。該銅柱30係藉由Sn鍍敷皮膜來防銹。此外,由於表面為Sn,因此焊料的潤濕性提升,陶瓷基板40與玻璃環氧基板50的接合變得更為強固。
銅柱30的鍍敷厚度較薄,為約0.5μm,因此並非為對銅柱30的維氏硬度造成影響者,銅柱30的維氏硬度係被保持為55HV以下。若Sn鍍敷厚度未達約0.3μm,防銹效果較弱,若大於1μm時,則維氏硬度會大於55HV而在銅柱發生裂痕等。因此,Sn鍍敷的厚度係以0.3~1μm為佳,以0.5μm左右為更佳。
接著,針對以上述銅柱30之製造方法所製造出的銅柱30的形狀例加以說明。如第5A圖及第5B圖所示,銅柱30係由柱本體部30a及柱頭部30b所構成。在本實施形態中,銅柱30的長度L1為1.524mm,柱本體部30a的直徑D1為0.25mm,柱頭部30b的長度L2為0.13mm,柱頭部30b的直徑D2為0.5mm。如上所示之銅柱30係柱本體部30a的直徑D1較小,為0.25mm,因此藉由設置端面平坦的柱頭部30b,來增強在第1A圖、第1B圖中所說明之與陶瓷基板40的焊接強度。
如上所示,藉由以本實施形態之銅柱之製造方法所製造出的銅柱30,由於維氏硬度為55HV以下,因此在透過該銅柱30來接合陶瓷基板40與玻璃環氧基板50時,可吸收因陶瓷基板40的熱膨脹與玻璃環氧基板50的熱膨脹的差而起的熱應力。結果,可防止在陶瓷基板40與銅柱30的接合部及玻璃環氧基板50與銅柱30的接合部發生裂痕、或破斷等接合的破壞。
其中,在本實施形態中,係在退火步驟中將銅柱構件20的溫度形成為670℃,且保持90分鐘來進行退火,但是並非限定於此,亦可將銅柱構件20的溫度形成為600℃以上,且保持60分鐘以上即可。
此外,在本實施形態中,係在衝壓步驟中形成柱頭部30b,但是並非限定於此,銅柱亦可為未設置柱頭部30b之筆直的圓柱形狀。
此外,在本實施形態中,係以切斷步驟、衝壓步驟的順序來製造銅柱30,但是並非限定於此,亦可在衝壓步驟之後再進行切斷步驟。
在本實施例中,係針對本發明之銅柱的具體製造方法、及以該方法所製造的銅柱及退火前的銅柱的銅組織或結晶粒子加以說明。
本發明之銅柱係由以下(1)~(7)予以製造。
(1)敲打以無氧銅所構成的直徑6mm的線形狀銅線的側面,通過模具而拉線至直徑2.6mm。
(2)更加敲打已拉線至直徑2.6mm的銅線的側面,通過模具而拉線至直徑0.25mm。
(3)如第2A圖、第2B圖、第2C圖及第3A圖、第3B圖、第3C圖所示,將已拉線至直徑0.25mm的銅線切斷成長度1.941mm,以擊錘將該切斷後的銅線的一端進行衝壓而形成柱頭部,而製作出銅柱構件。該銅柱構件的長度為1.524mm。
(4)將如上所示所製作出的銅柱構件放入SUS製桶,通至連續輸送機式電阻加熱爐(退火爐)來進行退火。該退火條件係:輸送機速度為30mm/分鐘、至670℃為止的升溫時間為52分鐘、670℃保持時間為90分鐘、藉由空冷風扇所得之冷卻時間為39分鐘,將退火爐內形成為氮氣雰圍氣,俾以防止銅柱氧化。
(5)在以IPA(Isopropyl alcohol)洗淨經退火的銅柱構件之後,以胺系表面處理劑來處理銅柱構件的表面。
(6)在甲磺酸系的Sn鍍敷液投入退火完畢的銅柱構件,以鍍敷厚度成為大致0.5μm的方式設定時間,而進行Sn鍍敷。
(7)將鍍敷後的銅柱構件以IPA洗淨後予以乾燥。
第6圖係顯示退火後銅柱之組織例的放大照片,第7圖係顯示退火前銅柱之組織例的放大照片。第6圖所示之退火後銅柱的組織係遠大於第7圖所示退火前銅柱的組織。退火前銅柱係藉由拉線步驟、切斷步驟及衝壓步驟而使銅組成作塑性變形。相對於此,退火後銅柱係銅組織再結晶化而使結晶粒成長。
退火後銅柱的結晶尺寸係平均粒徑為0.05mm,平均維氏硬度為45.4HV。此外,退火前的銅柱結晶尺寸係組織作塑性變形而無法測定粒徑,但是平均維氏硬度為113.1HV。藉此可知,退火後的銅柱係遠比退火前的銅柱為軟。順帶一提,銅柱的結晶尺寸係利用數位顯微鏡來進行測定。此外,銅柱的維氏硬度係依據「維氏硬度試驗-試驗方法JIS Z2144」來進行測定。
在本實施例中,係針對本發明之銅柱(以下稱為實施例的銅柱)、與以專利文獻2中所記載的製造方法所製造出的接腳(以下稱為比較例的接腳)的溫度週期試驗結果加以說明。
將實施例的銅柱961支透過焊膏而與陶瓷基板相連接來製作CGA。將該CGA透過焊膏而安裝在玻璃環氧基板(以下稱為實施例的CGA)。此外,比較例的接腳亦同樣地,將961支透過焊膏而與陶瓷基板相連接來製作CGA,將該製作出的CGA透過焊膏而安裝在玻璃環氧基板(以下稱為比較例的CGA)。
將實施例的CGA及比較例的CGA依據「溫度變化試驗方法JIS C0025」,投入在溫度條件為-30~130℃、保持時間10分鐘的溫度週期槽,求出至在該安裝品的銅柱發生裂痕為止的週期數。其結果顯示於下列表1。
實施例的銅柱的維氏硬度係成為48HV,比較例的接腳的維氏硬度為125HV,因此與比較例的接腳的維氏硬度相比,為1/2以下。此外,實施例的CGA係在溫度週期試驗中,即使為1000週期,在陶瓷基板與銅柱的接合部、及玻璃環氧基板與銅柱的接合部未發生裂痕(參照第8A圖、第8B圖)。相對於此,在比較例的CGA中,係在200週期後在玻璃環氧基板與接腳的接合部發生裂痕,在500週期後以致破斷。
如上所示之實施例的維氏硬度及溫度週期特性係長久保持銅柱的退火時間。藉此,本發明之銅柱係可適用於CGA。
1‧‧‧銅線導引部
1a、2a‧‧‧導引路徑
2‧‧‧銅線切斷部
2b‧‧‧柱頭成形部
3‧‧‧擊錘
10‧‧‧銅線
20‧‧‧銅柱構件
30‧‧‧銅柱
30a‧‧‧柱本體部
30b‧‧‧柱頭部
40‧‧‧陶瓷基板
50‧‧‧玻璃環氧基板
60‧‧‧焊料圓角
100‧‧‧製造裝置
D1、D2‧‧‧直徑
L1、L2‧‧‧長度
第1A圖係顯示本實施形態之銅柱之使用例的剖面的照片。
第1B圖係對第1A圖之照片所示銅柱標註元件符號的圖。
第2A圖係顯示銅柱構件之製造例(其1)的剖面圖。
第2B圖係顯示銅柱構件之製造例(其2)的剖面圖。
第2C圖係顯示銅柱構件之製造例(其3)的剖面圖。
第3A圖係顯示銅柱構件之製造例(其4)的剖面圖。
第3B圖係顯示銅柱構件之製造例(其5)的剖面圖。
第3C圖係顯示銅柱構件之製造例(其6)的剖面圖。
第4圖係顯示退火步驟的溫度分佈例的說明圖。
第5A圖係顯示銅柱的形狀例的斜視圖。
第5B圖係顯示銅柱的形狀例的正面圖。
第6圖係顯示退火後的銅柱的組織例的放大照片。
第7圖係顯示退火前的銅柱的組織例的放大照片。
第8A圖係顯示溫度週期試驗(1000週期)後的銅柱的連接例的剖面照片。
第8B圖係對第8A圖之照片所示銅柱標註元件符號的圖。
1...銅線導引部
1a、2a...導引路徑
2...銅線切斷部
2b...柱頭成形部
10...銅線
100...製造裝置
Claims (4)
- 一種銅柱之製造方法,其特徵在於具有:拉線步驟,為了將銅線形成為預定直徑而進行拉線;切斷步驟,將在前述拉線步驟中所拉線的銅線切斷成預定長度;衝壓步驟,藉由使擊錘朝向在前述切斷步驟中所切斷之作為銅柱本體部的銅線的長邊方向的一端進行衝撞,而形成設有柱頭之釘形狀的銅柱構件,前述柱頭具有比前述銅柱本體部還大的直徑;以及退火步驟,其係將在前述衝壓步驟中所形成的銅柱構件,保持在670℃以上的加熱溫度、90分鐘以上的加熱時間而進行退火,藉此形成成為比維氏硬度3HV的Pb-Sn焊料硬、維氏硬度為48HV以下的銅柱。
- 如申請專利範圍第1項所述之銅柱之製造方法,其中,具有表面處理步驟,其係以胺系表面處理劑將在前述退火步驟中所退火的銅線或銅柱構件進行表面處理。
- 如申請專利範圍第2項所述之銅柱之製造方法,其中,具有鍍敷步驟,其係以甲磺酸系的鍍敷液來將在前述退火步驟中所退火的銅線或銅柱構件、或在前述表面處理步驟中經表面處理的銅線或銅柱構件進行鍍敷。
- 一種銅柱,是藉由申請專利範圍第1至3項任一項所述之銅柱之製造方法所製造。
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