TWI513046B - 發光二極體及其製造方法 - Google Patents
發光二極體及其製造方法 Download PDFInfo
- Publication number
- TWI513046B TWI513046B TW102130074A TW102130074A TWI513046B TW I513046 B TWI513046 B TW I513046B TW 102130074 A TW102130074 A TW 102130074A TW 102130074 A TW102130074 A TW 102130074A TW I513046 B TWI513046 B TW I513046B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- type
- layer
- semiconductor layer
- type semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 title description 4
- 239000010410 layer Substances 0.000 claims description 106
- 239000004065 semiconductor Substances 0.000 claims description 48
- 239000011241 protective layer Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 23
- 238000009792 diffusion process Methods 0.000 claims description 20
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 239000004408 titanium dioxide Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical group O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 4
- 229910000420 cerium oxide Inorganic materials 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910010092 LiAlO2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
本發明涉及一種發光二極體及其製造方法。
相比於傳統之發光源，發光二極體（Light Emitting Diode，LED）具有重量輕、體積小、污染低、壽命長等優點，其作為一種新型之發光源，已經被越來越廣泛地應用。
先前之發光二極體包括基板、成長在該基板上之磊晶結構以及形成在該磊晶結構上之第一電極與第二電極。其中，磊晶結構包括依次形成在該基板之第一型半導體層，活性層，第二型半導體層，該磊晶結構蝕刻形成一平臺結構，以使第一型半導體層具有一個暴露在外之暴露面，該第一電極形成在該暴露面上，該第二電極形成該第二型半導體層上。活性層發出之部分光線由平臺結構之側面射出，再藉由該第一電極反射至該發光二極體之正向出射。一般地，第一電極由金(Au)製成，其對光之反射能力較差，通常反射率僅為40%左右，從而使不少光線損失。為了解決這樣之問題，在先前技術中，通常會在第一電極上沉積一鋁（Al）、銀（Ag）等高反射率材料，以提高第一電極之反射能力，進而提高發光二極體正向出光能力。但是，鋁、銀等高反射金屬之活性較高，比較容易因為環境因素產生質變。例如，鋁在高溫制程中容易於表面形成氧化鋁而使反射率下降；銀容易與環境中之硫化物產生反應，形成硫化銀而使反射率下降。並且，高反射金屬與第一電極上之間還容易產生擴散，從而會造成電極之歐姆接觸較差。
有鑑於此，有必要提供一種可避免反射層與環境中之物質產生反應，以及反射層與電極之間發生擴散之發光二極體及其製造方法。
一種發光二極體，其包括基板、磊晶結構、第一電極以及第二電極。所述磊晶結構包括依次形成在基板上之第一型半導體層、活性層、第二型半導體層，並且該磊晶結構藉由蝕刻露出部分第一型半導體層。所述第一電極形成在露出之第一型半導體層上，所述第二電極形成在第二型半導體層上。所述第一電極之外表面上依次形成有第一透明保護層、反射層以及第二透明保護層。
一種發光二極體之製造方法，其包括以下幾個步驟：
提供一基板，並在該基板上形成磊晶結構，所述磊晶結構包括依序形成在基板上之第一型半導體層、活性層以及第二型半導體層；
蝕刻所述磊晶結構以露出部分第一型半導體層；
在露出之第一型半導體層上形成第一電極，在第二型半導體層上形成第二電極；
在第一電極外形成第一透明保護層；
在第一電極外之第一透明保護層上形成反射層；
在反射層外表面上形成第二透明保護層。
上述之發光二極體及其製造方法中，第一電極外形成第一透明保護層後，又形成反射層於該第一透明保護層上，接著再形成一第二透明保護層於該反射層上。由此，第一透明保護層可以避免第一電極與反射層之間產生擴散而影響第一電極之歐姆接觸，而第二透明保護層又可以避免反射層與周圍環境中之物質產生反應。
100‧‧‧發光二極體
10‧‧‧基板
20‧‧‧磊晶結構
30‧‧‧第一電極
40‧‧‧第二電極
50‧‧‧反射層
60‧‧‧第一透明保護層
70‧‧‧第二透明保護層
20a‧‧‧凹槽
20b‧‧‧平臺
21‧‧‧n型半導體層
22‧‧‧活性層
23‧‧‧p型半導體層
24‧‧‧透明電流擴散層
31‧‧‧n型焊墊
32‧‧‧n型支路電極
41‧‧‧p型焊墊
42‧‧‧p型支路電極
圖1為本發明實施方式中之發光二極體之俯視圖。
圖2為圖1中之發光二極體沿II-II方向之部分截面圖。
請參閱圖1以及圖2，本發明實施方式提供之一種發光二極體100包括一基板10、形成在該基板10上之一磊晶結構20、形成在該磊晶結構20上之第一電極30與第二電極40以及形成在該第一電極30上之反射層50。
所述基板10通常為藍寶石(Sapphire)、碳化矽(SiC)、矽(Si)、砷化鎵(GaAs)、偏鋁酸鋰(LiAlO2)、氧化鎂(MgO)、氧化鋅(ZnO)、氮化鎵(GaN)、氮化鋁(AlN)、或氮化銦(InN)等單晶基板。
所述磊晶結構20包括依序形成在基板10上之n型半導體層21、活性層22、p型半導體層23以及透明電流擴散層24。所述活性層22可為單異質結構、雙異質結構、單量子阱層或是多重量子阱層結構。所述透明電流擴散層24以蒸鍍，濺鍍等物理氣相沉積法形成，其材料可為銦錫氧化物（ITO）、氧化鋅銦（IZO）、氧化鋅鋁（AZO）、氧化鋅鎵（GZO）、氧化銦鎵（GIO）、氧化鋅鎵銦（IGZO）。
所述磊晶結構20上由透明電流擴散層24向磊晶結構20內部蝕刻形成多條相互平行之凹槽20a，所述n型半導體層21由該凹槽20a之底面露出。另外，所述磊晶結構20之一個角落處還蝕刻形成一暴露出n型半導體層21之平臺20b，所述平臺20b與多條凹槽20a連通。所述凹槽20a之側面為傾斜面，其由n型半導體層21傾斜向上、向外延伸。
所述第一電極30為叉狀電極，其形成在凹槽20a以及平臺20b底部暴露之n型半導體層21上。具體地，該第一電極30為n型電極，其包括n型焊墊31以及由該n型焊墊31延伸出之多條相互平行之n型支路電極32。其中，n型焊墊31形成於平臺20b上，多條n型支路電極32由n型焊墊31分別延伸至凹槽20a中。該n型支路電極32之橫截面呈一棱臺形狀，其上表面之面積小於下表面之面積（參閱圖2）。在本實施方式中，所述第一電極30之材料為金，其可利用濺鍍、蒸鍍等物理氣相層積之方法將金屬沉積於所述n型半導體層21上。
所述第二電極40也為叉狀電極，其形成磊晶結構20頂面之透明電流擴散層24上。具體地，該第二電極40為p型電極，其包括p型焊墊41以及由該p型焊墊41延伸出之多條相互平行之p型支路電極42。其中，所述p型焊墊41形成於磊晶結構20上之與平臺20b相對之另一角落處，所述多條p型支路電極42分別與多條n型支路電極32相互平行間隔。在本實施方式中，所述第二電極40之材料為金，其可利用濺鍍、蒸鍍等物理氣相層積之方法將金屬沉積於所述透明電流擴散層24上。
所述磊晶結構20之上表面上還形成有第一透明保護層60。該第一透明保護層60覆蓋透明電流擴散層24、凹槽20a之內表面、整個第一電極30之外表面以及第二電極40之p型支路電極42之外表面上，並且暴露出第二電極40之p型焊墊41，以用於與外部實現電連接。該第一透明保護層60可以為二氧化矽SiO2、氮化矽Si3N4、二氧化鈦TiO2。
所述反射層50形成在第一電極30外表面之第一透明保護層60上。該反射層50可以為鋁（Al）、鈦（Ti）、鉻（Cr）、鎳（Ni）、銀（Ag）、鉑（Pt）、鎢（W）、銠（Rh）、鉬（Mo）等高反射效率之材料製成，用於反射活性層22發出之且照射至該反射層50上之光線，並將光線反射至發光二極體100之出光面之方向出射，從而提高該發光二極體100之正向出光效率。所述反射層50之外表面上還形成有一第二透明保護層70。該第二透明保護層70可以為二氧化矽SiO2、氮化矽Si3N4、二氧化鈦TiO2。
所述第一電極30之n型焊墊31最後藉由蝕刻方式被露出，以用於與外部實現電連接。
在本發明之發光二極體100中，第一電極30外形成第一透明保護層60後，又形成反射層50於該第一透明保護層60上，接著再形成一第二透明保護層70於該反射層50上。由此，第一透明保護層60可以避免第一電極30與反射層50之間產生擴散而影響第一電極30之歐姆接觸，而第二透明保護層70又可以避免反射層50與周圍環境中之物質產生反應。
本發明之發光二極體100之製造方法包括以下幾個步驟：
步驟一：提供一基板10，並在該基板10上形成磊晶結構20，所述磊晶結構20包括依序形成在基板10上之n型半導體層21、活性層22、p型半導體層23以及透明電流擴散層24。
步驟二：蝕刻所述磊晶結構20以露出部分n型半導體層21。在蝕刻之過程中，所述磊晶結構20上由透明電流擴散層24向磊晶結構20內部蝕刻形成多條相互平行之凹槽20a，所述n型半導體層21由該凹槽20a之底面露出。另外，所述磊晶結構20之一個角落處還蝕刻形成一暴露出n型半導體層21之平臺20b，所述平臺20b與多條凹槽20a連通。
步驟三：在露出之n型半導體層21上形成第一電極30，在磊晶結構20之頂部形成第二電極40。所述第一電極30為叉狀電極，其形成在凹槽20a以及平臺20b底部暴露之n型半導體層21上。具體地，該第一電極30為n型電極，其包括n型焊墊31以及由該n型焊墊31延伸出之多條相互平行之n型支路電極32。其中，n型焊墊31形成於平臺20b上，多條n型支路電極32由n型焊墊31分別延伸至凹槽20a中。所述第二電極40也為叉狀電極，其形成磊晶結構20頂面之透明電流擴散層24上。具體地，該第二電極40為p型電極，其包括p型焊墊41以及由該p型焊墊41延伸出之多條相互平行之p型支路電極42。其中，所述p型焊墊41形成於磊晶結構20上之與平臺20b相對之另一角落處，所述多條p型支路電極42分別與多條n型支路電極32相互平行間隔。
步驟四：在第一電極30外形成第一透明保護層60。該第一透明保護層60覆蓋在磊晶結構20之整個上表面上，其覆蓋透明電流擴散層24、凹槽20a之內表面、整個第一電極30之外表面以及第二電極40之p型支路電極42之外表面上，並且暴露出第二電極40之p型焊墊41。該第一透明保護層60可以為二氧化矽SiO2、氮化矽Si3N4、二氧化鈦TiO2。
步驟五：在第一電極30外之第一透明保護層60上形成反射層50。該反射層50可以為鋁（Al）、鈦（Ti）、鉻（Cr）、鎳（Ni）、銀（Ag）、鉑（Pt）、鎢（W）、銠（Rh）、鉬（Mo）等高反射效率之材料製成。
步驟六：在反射層50外表面上形成一第二透明保護層70。該第二透明保護層70可以為二氧化矽SiO2、氮化矽Si3N4、二氧化鈦TiO2。
無
100‧‧‧發光二極體
10‧‧‧基板
20‧‧‧磊晶結構
30‧‧‧第一電極
50‧‧‧反射層
60‧‧‧第一透明保護層
70‧‧‧第二透明保護層
20a‧‧‧凹槽
21‧‧‧n型半導體層
22‧‧‧活性層
23‧‧‧p型半導體層
24‧‧‧透明電流擴散層
32‧‧‧n型支路電極
42‧‧‧p型支路電極
Claims (10)
- 一種發光二極體，其包括：
一基板；
一磊晶結構，其包括依次形成在基板上之第一型半導體層、活性層、第二型半導體層，該磊晶結構藉由蝕刻露出部分第一型半導體層；
一第一電極，其形成在露出之第一型半導體層上；
一第二電極，其形成在第二型半導體層上；
所述第一電極之外表面上依次形成有第一透明保護層、反射層以及第二透明保護層。 - 如申請專利範圍第1項所述之發光二極體，其中：所述磊晶結構還包括形成在第二型半導體層上之透明電流擴散層，所述第二電極形成在該透明電流擴散層上。
- 如申請專利範圍第2項所述之發光二極體，其中：所述磊晶結構上由透明電流擴散層向磊晶結構內部蝕刻形成多條相互平行之凹槽，所述第一型半導體層由該凹槽之底面露出，所述磊晶結構之一個角落處還蝕刻形成一暴露出第一型半導體層之平臺，所述平臺與多條凹槽連通。
- 如申請專利範圍第3項所述之發光二極體，其中：所述凹槽之側面為傾斜面，該傾斜面由第一型半導體層傾斜向上、向外延伸。
- 如申請專利範圍第3項所述之發光二極體，其中：所述第一電極為叉狀電極，該第一電極包括第一型焊墊以及由該第一型焊墊延伸出之多條相互平行之第一型支路電極，第一型焊墊形成於平臺底部暴露之第一型半導體層上，多條第一型支路電極由第一型焊墊分別延伸至凹槽中，並形成在凹槽底部暴露之第一型半導體層上。
- 如申請專利範圍第5項所述之發光二極體，其中：所述第二電極為叉狀電極，該第二電極形成磊晶結構頂面之透明電流擴散層上，該第二電極包括第二型焊墊以及由該第二型焊墊延伸出之多條相互平行之第二型支路電極，所述第二型焊墊形成於磊晶結構上之與平臺相對之另一角落處，所述多條第二型支路電極分別與多條第一型支路電極相互平行間隔。
- 如申請專利範圍第6項所述之發光二極體，其中：所述第一透明保護層覆蓋透明電流擴散層、凹槽之內表面、第一電極之外表面以及第二電極之第二型支路電極之外表面上，並且暴露出第二電極之第二型焊墊。
- 如申請專利範圍第1項所述之發光二極體，其中：所述第一透明保護層以及第二透明保護層之材料為二氧化矽、氮化矽或二氧化鈦。
- 如申請專利範圍第1項所述之發光二極體，其中：所述反射層由為鋁、鈦、鉻、鎳、銀、鉑、鎢、銠或鉬製成。
- 一種發光二極體之製造方法，其包括以下幾個步驟：
提供一基板，並在該基板上形成磊晶結構，所述磊晶結構包括依序形成在基板上之第一型半導體層、活性層以及第二型半導體層；
蝕刻所述磊晶結構以露出部分第一型半導體層；
在露出之第一型半導體層上形成第一電極，在第二型半導體層上形成第二電極；
在第一電極外形成第一透明保護層；
在第一電極外之第一透明保護層上形成反射層；
在反射層外表面上形成第二透明保護層。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310352683.2A CN104377287B (zh) | 2013-08-14 | 2013-08-14 | 发光二极管及其制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201508950A TW201508950A (zh) | 2015-03-01 |
| TWI513046B true TWI513046B (zh) | 2015-12-11 |
Family
ID=52466171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102130074A TWI513046B (zh) | 2013-08-14 | 2013-08-22 | 發光二極體及其製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9171993B2 (zh) |
| CN (1) | CN104377287B (zh) |
| TW (1) | TWI513046B (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6674754B2 (ja) * | 2015-08-31 | 2020-04-01 | アルパッド株式会社 | 発光装置 |
| CN106992195B (zh) * | 2016-01-18 | 2021-10-15 | 晶元光电股份有限公司 | 发光二极管装置及其制造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040169189A1 (en) * | 2002-12-11 | 2004-09-02 | Hyeong Tag Jeon | Thin film LED |
| TW200826314A (en) * | 2006-12-08 | 2008-06-16 | Genesis Photonics Inc | Vertical conductive LED and manufacture method thereof |
| US20090242918A1 (en) * | 2004-09-22 | 2009-10-01 | Cree, Inc. | High Efficiency Group III Nitride LED with Lenticular Surface |
| TW201310703A (zh) * | 2011-08-17 | 2013-03-01 | Ritedia Corp | 垂直式發光二極體結構及其製備方法 |
| TW201314951A (zh) * | 2011-09-29 | 2013-04-01 | Advanced Optoelectronic Tech | 發光二極體晶粒及其製作方法、背光模組 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070040027A (ko) * | 2005-10-11 | 2007-04-16 | 삼성전자주식회사 | 표시패널용 어레이 기판, 이의 제조 방법, 이를 갖는표시패널 및 이를 갖는 액정표시장치 |
| KR100706944B1 (ko) * | 2005-10-17 | 2007-04-12 | 삼성전기주식회사 | 질화물계 반도체 발광소자 |
| CN100470863C (zh) * | 2006-11-01 | 2009-03-18 | 中国科学院半导体研究所 | P型氮化镓电极的制备方法 |
| CN101452975A (zh) * | 2007-12-04 | 2009-06-10 | 杨秋忠 | 晶片级封装的发光二极管芯片及其制作方法 |
| KR100988041B1 (ko) * | 2008-05-15 | 2010-10-18 | 주식회사 에피밸리 | 반도체 발광소자 |
| CN101937950A (zh) * | 2009-07-01 | 2011-01-05 | 吕联祥 | 覆晶式氮化镓发光二极管的制造方法 |
| TW201238043A (en) * | 2011-03-11 | 2012-09-16 | Chi Mei Lighting Tech Corp | Light-emitting diode device and method for manufacturing the same |
| JP5865695B2 (ja) * | 2011-12-19 | 2016-02-17 | 昭和電工株式会社 | 発光ダイオード及びその製造方法 |
| KR20130077208A (ko) * | 2011-12-29 | 2013-07-09 | 삼성전자주식회사 | 반도체 발광 소자 및 ｌｅｄ 모듈 |
-
2013
- 2013-08-14 CN CN201310352683.2A patent/CN104377287B/zh active Active
- 2013-08-22 TW TW102130074A patent/TWI513046B/zh active
-
2014
- 2014-08-14 US US14/459,564 patent/US9171993B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040169189A1 (en) * | 2002-12-11 | 2004-09-02 | Hyeong Tag Jeon | Thin film LED |
| US20090242918A1 (en) * | 2004-09-22 | 2009-10-01 | Cree, Inc. | High Efficiency Group III Nitride LED with Lenticular Surface |
| TW200826314A (en) * | 2006-12-08 | 2008-06-16 | Genesis Photonics Inc | Vertical conductive LED and manufacture method thereof |
| TW201310703A (zh) * | 2011-08-17 | 2013-03-01 | Ritedia Corp | 垂直式發光二極體結構及其製備方法 |
| TW201314951A (zh) * | 2011-09-29 | 2013-04-01 | Advanced Optoelectronic Tech | 發光二極體晶粒及其製作方法、背光模組 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150048305A1 (en) | 2015-02-19 |
| CN104377287B (zh) | 2017-04-26 |
| CN104377287A (zh) | 2015-02-25 |
| US9171993B2 (en) | 2015-10-27 |
| TW201508950A (zh) | 2015-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101449030B1 (ko) | 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법 | |
| TWI422077B (zh) | 發光二極體結構及其製作方法 | |
| TWI818056B (zh) | 發光元件 | |
| TW201841391A (zh) | 發光元件 | |
| GB2542542A (en) | Vertical LED chip structure and manufacturing method therefor | |
| JP2007103689A (ja) | 半導体発光装置 | |
| KR20190104692A (ko) | 반도체 발광소자 | |
| JP2008218878A (ja) | ＧａＮ系ＬＥＤ素子および発光装置 | |
| WO2015184774A1 (zh) | 一种倒装发光二极管结构及其制作方法 | |
| TWI527263B (zh) | 發光二極體結構 | |
| US20120235114A1 (en) | Light emitting chip | |
| JP2015225915A (ja) | 発光素子 | |
| WO2016000583A1 (zh) | 垂直型led结构及其制作方法 | |
| TW201338192A (zh) | 發光二極體晶粒及其製作方法 | |
| US20130328077A1 (en) | Light-emitting element | |
| TWI513046B (zh) | 發光二極體及其製造方法 | |
| JP2007142420A (ja) | 垂直構造の窒化ガリウム系発光ダイオード素子 | |
| JP2008277430A (ja) | 窒化物半導体発光素子 | |
| CN210040239U (zh) | 发光二极管 | |
| TWI721340B (zh) | 發光二極體及其製作方法 | |
| CN104269471A (zh) | 全角度侧壁反射电极的led芯片及其制作方法 | |
| TWI384653B (zh) | Light emitting diode reflection structure and manufacturing method thereof | |
| TW201414012A (zh) | 發光裝置及其製作方法 | |
| JP5682427B2 (ja) | 発光素子 | |
| TWI817129B (zh) | 發光元件 |