WO2016000583A1 - 垂直型led结构及其制作方法 - Google Patents

垂直型led结构及其制作方法 Download PDF

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Publication number
WO2016000583A1
WO2016000583A1 PCT/CN2015/082623 CN2015082623W WO2016000583A1 WO 2016000583 A1 WO2016000583 A1 WO 2016000583A1 CN 2015082623 W CN2015082623 W CN 2015082623W WO 2016000583 A1 WO2016000583 A1 WO 2016000583A1
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layer
contact layer
bonding
vertical
metal
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PCT/CN2015/082623
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French (fr)
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张楠
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映瑞光电科技(上海)有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

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  • the invention relates to the field of LED manufacturing, in particular to a vertical LED structure and a manufacturing method thereof.
  • LEDs high-power lighting diodes
  • conventional IC chips with the same side structure have shortcomings such as current crowding, high voltage and heat dissipation, which are difficult to meet high power.
  • Demand, and vertical LED chip can not only effectively solve the crowding effect under high current injection, but also alleviate the decrease of internal quantum efficiency caused by large current injection and improve the photoelectric performance of vertical LED chip.
  • the vertical LED chip is mainly prepared by growing a GaN epitaxial layer on a substrate (generally a sapphire material), forming a contact layer and a metal mirror layer on the GaN-based epitaxial layer, and then using electroplating or substrate bonding (Wafer). Bonding method to produce a thermally conductive substrate with good thermal conductivity, and also as a new substrate for the GaN-based epitaxial layer, and then separating the sapphire substrate and the GaN-based epitaxial layer by laser lift-off, and transferring the epitaxial layer to the metal substrate, The heat dissipation performance of the LED chip is better, and then an N-type electrode and a P-type electrode are formed.
  • the fabrication of vertical structure LEDs after epitaxial layers are grown on sapphire substrates typically uses laser lift-off techniques to separate the epitaxial layer from the sapphire substrate.
  • FIG. 1 is a schematic structural diagram of a vertical LED chip in the prior art; the structure includes a P-type electrode 10, a bonded substrate 20, a metal bonding layer 30, and a metal mirror layer which are sequentially connected. 40 contact layer 50, epitaxial layer 60, and N-type electrode 70.
  • the material of the metal mirror layer 50 is usually Ag or Al.
  • the conventional metal mirror layer 40 has problems of poor thermal stability, easy diffusion, and the like, and metal clusters or diffusion are often caused in the process of the LED chip, especially in the high temperature annealing process.
  • the cluster causes a decrease in the reflectance of the metal mirror layer 40 and a high resistance state in the electrode of the LED chip, thereby lowering the brightness or voltage of the LED chip, and reducing the light efficiency of the overall LED chip.
  • Metal diffusion causes the metal to climb to the side wall of the P/N junction, causing the LED chip to leak easily, which will affect the service life of the LED chip.
  • the present invention provides a vertical LED manufacturing method, comprising the steps of:
  • An N-type electrode is formed.
  • the Bragg mirror structure is formed by alternately stacking a first material and a second material, and the first material is in contact with the surface of the contact layer,
  • the first material is TiO 2 and the second material is SiO 2 .
  • the Bragg mirror structure includes nine or more pairs of first material and a second material that are alternately stacked.
  • the shape of the opening is a circular hole shape or a strip shape.
  • the size of the opening is 3 micro Meter ⁇ 50 microns.
  • the total surface area of the opening accounts for 3% to 50% of the total surface of the contact layer.
  • the epitaxial layer includes an N-GaN layer, a light emitting layer, and a P-GaN layer which are sequentially formed.
  • the N-type electrode is formed on the N-GaN layer, and the method further includes forming a P-type electrode on the bonding substrate.
  • the contact layer is AZO, ITO or ZnO.
  • the thickness of the contact layer ranges from 50 nm to 100 nm.
  • the metal bonding layer is Au or AuSn.
  • the metal bonding layer has a thickness of 1 ⁇ m or more.
  • the bonding substrate is Si, Cu, WCu or MoCu.
  • the growth substrate is peeled off using a laser or a chemical peeling method.
  • the present invention also proposes a vertical type LED structure formed by a vertical type LED manufacturing method as described above, the structure comprising: a pair of electrodes, a bonded substrate, a bonded metal, a Bragg mirror structure a contact layer and an epitaxial layer, wherein the pair of electrodes are respectively formed on the epitaxial layer and the bonding substrate, the bonding substrate is connected to the bonding metal, and the Bragg mirror structure and the a contact layer and a bonding metal connection, the Bragg mirror structure having a plurality of openings, the bonding metal being connected to the contact layer through the plurality of openings, the contact layer The epitaxial layer is connected.
  • the beneficial effects of the present invention are mainly embodied by: replacing the metal mirror layer in the prior art as a mirror by using a Bragg mirror structure, and the Bragg mirror structure is provided with an opening to ensure the contact layer and the metal key.
  • the layered layers are connected, and the Bragg mirror structure can improve the thermal stability of the mirror and avoid metal diffusion, thereby improving the yield of the vertical LED.
  • a Bragg mirror structure in which two materials are stacked in a plurality of layers, wherein one layer has a high refractive index, can improve the reflection efficiency, and the vertical LED formed is better.
  • FIG. 1 is a schematic structural view of a vertical LED chip in the prior art
  • FIG. 2 is a flow chart of a method for fabricating a vertical LED according to an embodiment of the present invention
  • FIG. 8 are schematic cross-sectional views showing a process of manufacturing a vertical LED according to an embodiment of the present invention.
  • 9a-9c are top views of structures of differently shaped Bragg mirrors in accordance with an embodiment of the present invention.
  • a vertical LED manufacturing method including the steps:
  • S100 providing a growth substrate on which an epitaxial layer and a contact layer are sequentially formed;
  • the growth substrate 100 is generally a sapphire substrate, and an epitaxial layer 200 is formed on the growth substrate 100, wherein the epitaxial layer 200 includes sequentially formed N-GaN layer 210, light-emitting layer 220 and P-GaN layer 230; then, a contact layer 300 is formed on the epitaxial layer 200, and the contact layer 300 is a transparent conductive layer, which is made of AZO and ITO. Or ZnO, the thickness of which is in the range of 50 nm to 100 nm, for example, 80 nm.
  • a Bragg reflector (DBR) structure 400 is formed on the surface of the contact layer 300.
  • the Bragg mirror structure 400 is formed by alternately stacking two materials, respectively.
  • a material and a second material wherein the first material is in contact with the surface of the contact layer 300, and the refractive index of the first material is greater than the refractive index of the second material, and the refractive index of the first material is higher.
  • the refractive index of the first material is greater than 2.4.
  • the first material is TiO 2 and the second material is SiO 2 .
  • two materials are used. It can be other media materials, which can meet the above requirements.
  • the Bragg mirror structure 400 is greater than or equal to 18 layers, that is, the number of layers of the first material and the second material stacked is greater than or equal to 18 layers, or 9 or more pairs of the first material and A second material stack forms the Bragg mirror structure 400.
  • the Bragg mirror structure 400 can include 26 layers. As shown in FIG. 4, the more the number of layers of the Bragg mirror structure 400, the better the luminescent reflection effect.
  • step S200 the opening between the Bragg mirror structures 400 is formed by etching, that is, a multilayer film is formed first, and then the film is sequentially etched to form an opening.
  • FIG. 9a shows that the opening 410 is circular.
  • the opening 410 needs to expose the contact layer 300 to facilitate the ohmic contact of the contact layer 300 with the subsequent metal bonding layer; please refer to FIG. 9b and 9c, 9b and 9c respectively illustrate different types of openings 410.
  • the openings 410 may be circular or strip-shaped as long as the contact layer 300 is exposed;
  • the size of 410 is from 3 microns to 50 microns, such as 10 microns; the total surface area of the opening 410 is from 3% to 50%, for example 20%, of the total surface of the contact layer 300.
  • a metal bonding layer 500 is formed.
  • the metal bonding layer 500 needs to be in ohmic contact with the contact layer 300 through an opening 410, and the metal bonding layer 500 is Au or AuSn.
  • the thickness is 1 ⁇ m or more, for example, 3 ⁇ m, which is used for subsequent bonding with the bonded substrate.
  • the bonding substrate 600 is formed on the metal bonding layer 500.
  • the bonding substrate 600 is made of other alloys of Si, Cu, WCu, MoCu or Cu.
  • the bonding substrate 600 and the metal bonding layer 500 are bonded by a high temperature bonding method, and the bonding temperature of the high temperature bonding method ranges from 150 degrees to 320 degrees, preferably 280 degrees.
  • step S500 the growth substrate 100 is peeled off using a laser or chemically, Since the bonded substrate 600 is made of a metal, the heat dissipation effect is better, and thus the growth substrate 100 is removed.
  • an electrode is formed. Specifically, the electrode includes an N-type electrode 800 and a P-type electrode 700, and the N-type electrode 800 is connected to an N-GaN layer in the epitaxial layer 300. A P-type electrode 700 is connected to the bonded substrate 600 to obtain a vertical type LED.
  • a vertical LED structure is also proposed, which is formed by a vertical LED manufacturing method as described above, as shown in FIG. 8, the structure comprising: an electrode, a bonded substrate 600, The bonding metal 500, the Bragg mirror structure 400, the contact layer 300, and the epitaxial layer 200, wherein the epitaxial layer 200 sequentially includes an N-GaN layer, a light emitting layer, and a P-GaN layer, and the N-type electrode 800 and the N in the epitaxial layer 200 a GaN layer connected, a P-type electrode 700 connected to the bonding substrate 600, the bonding substrate 600 being connected to the bonding metal 500, the Bragg mirror structure 400 and the contact layer 300 and the key
  • the metal mirror 500 is connected, the Bragg mirror structure 400 has an opening 410, and the bonding metal 500 is connected to the contact layer 300 through an opening 410, and the contact layer 300 and the P-GaN layer in the epitaxial layer 200 connection.
  • the Bragg mirror structure is used to replace the metal mirror layer in the prior art as a mirror, and the Bragg mirror structure is provided with an opening to ensure contact.
  • the layer is connected to the metal bonding layer, and the Bragg mirror structure can improve the thermal stability of the mirror and avoid metal diffusion, thereby improving the yield of the vertical LED.
  • a Bragg mirror structure in which two materials are stacked in a plurality of layers, wherein one layer has a high refractive index can improve the reflection efficiency, and the vertical LED formed is better.

Abstract

一种垂直型LED结构及其制作方法，使用布拉格反射镜结构（400）替换现有技术中的金属反射镜层（40）作为反射镜，布拉格反射镜结构（400）设有开口，能够确保接触层（300）和金属键合层（500）相连接，布拉格反射镜结构能够提高反射镜的热稳定性并且避免金属扩散，从而能够改善垂直型LED的良品率。进一步的，采用两种材质多层堆叠而成的布拉格反射镜结构，其中一层为高折射率，能够提高反射效率，使形成的垂直型LED发光效果更佳

Description

垂直型LED结构及其制作方法 技术领域
本发明涉及LED制作领域，尤其涉及一种垂直型LED结构及其制作方法。
背景技术
近年来，对于大功率照明发光二极管(Light-Emitting Diode，LED)的研究已经成为趋势，然而传统同侧结构的LED芯片存在电流拥挤、电压过高和散热难等缺点，很难满足大功率的需求，而垂直LED芯片不仅可以有效地解决大电流注入下的拥挤效应，还可以缓解大电流注入所引起的内量子效率降低，改善垂直LED芯片的光电性能。
目前垂直LED芯片的制备工艺主要为，在衬底上(一般为蓝宝石材料)生长GaN外延层，在该GaN基外延层上制作接触层和金属反光镜层，然后采用电镀或基板键合(Wafer bonding)的方式制作导热性能良好的导热基板，同时也作为GaN基外延层的新衬底，再通过激光剥离的方法使蓝宝石衬底和GaN基外延层分离，外延层转移到金属基板上，这样使得LED芯片的散热性能会更好，之后再形成N型电极和P型电极。目前，在蓝宝石衬底上生长外延层后制作垂直结构LED通常采用激光剥离技术使外延层和蓝宝石衬底分离。
具体的，请参考图1，图1为现有技术中垂直LED芯片的结构示意图；所述结构包括依次连接的P型电极10、键合衬底20、金属键合层30、金属反射镜层40接触层50、外延层60以及N型电极70。其中，所述金属反光镜层50的材质通常为Ag或Al。
然而，常规的金属反射镜层40存在热稳定性差、易扩散等问题，在LED芯片制程中，尤其是在高温退火工艺中，经常会造成金属团簇或扩散，金属 团簇会造成金属反射镜层40的反射率降低及在LED芯片电极局部形成高阻态，从而使LED芯片的亮度降低或电压升高，整体LED芯片的光效降低。金属扩散导致金属爬升至P/N结侧壁，造成LED芯片容易漏电，会影响LED芯片的使用寿命。
发明内容
本发明的目的在于提供一种垂直型LED结构及其制作方法，在保证反射率的情况下不使用金属反射镜层，避免金属扩散和团簇造成的不良影响。
为了实现上述目的，本发明提出了一种垂直型LED制作方法，包括步骤：
提供生长衬底，在所述生长衬底上依次形成有外延层和接触层；
在所述接触层表面形成布拉格反射镜结构，在所述布拉格反射镜结构中形成多个开口暴露出部分所述接触层；
在所述布拉格反射镜结构以及暴露出的接触层表面形成金属键合层；
在所述金属键合层上形成键合衬底；
剥离所述生长衬底；
形成N型电极。
进一步的，在所述的垂直型LED制作方法中，所述布拉格反射镜结构由第一种材质和第二种材质交替堆叠而成，与接触层表面相接触的为第一种材质，所述第一种材质为TiO2，所述第二种材质为SiO2。
进一步的，在所述的垂直型LED制作方法中，所述布拉格反射镜结构包括大于等于9对交替堆叠的第一种材质和第二种材质。
进一步的，在所述的垂直型LED制作方法中，所述开口的形状为圆孔状或条状。
进一步的，在所述的垂直型LED制作方法中，所述开口的大小为3微 米～50微米。
进一步的，在所述的垂直型LED制作方法中，所述开口的总表面积占所述接触层总表面的3％～50％。
进一步的，在所述的垂直型LED制作方法中，所述外延层包括依次形成的N-GaN层、发光层和P-GaN层。
进一步的，在所述的垂直型LED制作方法中，所述N型电极形成在所述N-GaN层上，所述方法还包括在所述键合衬底上形成P型电极。
进一步的，在所述的垂直型LED制作方法中，所述接触层为AZO、ITO或ZnO。
进一步的，在所述的垂直型LED制作方法中，所述接触层的厚度范围是50nm～100nm。
进一步的，在所述的垂直型LED制作方法中，所述金属键合层为Au或AuSn。
进一步的，在所述的垂直型LED制作方法中，所述金属键合层的厚度大于等于1μm。
进一步的，在所述的垂直型LED制作方法中，所述键合衬底为Si、Cu、WCu或MoCu。
进一步的，在所述的垂直型LED制作方法中，使用激光或者化学剥离方法剥离所述生长衬底。
进一步的，本发明还提出了一种垂直型LED结构，采用如上文所述的垂直型LED制作方法形成，所述结构包括：一对电极、键合衬底、键合金属、布拉格反射镜结构、接触层和外延层，其中，所述一对电极分别形成于所述外延层和键合衬底上，所述键合衬底与所述键合金属连接，所述布拉格反射镜结构与所述接触层和键合金属连接，所述布拉格反射镜结构具有多个开口，所述键合金属通过所述多个开口与所述接触层连接，所述接触层与所 述外延层连接。
与现有技术相比，本发明的有益效果主要体现在：使用布拉格反射镜结构替换现有技术中的金属反射镜层作为反射镜，布拉格反射镜结构设有开口，能够确保接触层和金属键合层相连接，布拉格反射镜结构能够提高反射镜的热稳定性并且避免金属扩散，从而能够改善垂直型LED的良品率。
进一步的，采用两种材质多层堆叠而成的布拉格反射镜结构，其中一层为高折射率，能够提高反射效率，使形成的垂直型LED发光效果更佳。
附图说明
图1为现有技术中垂直LED芯片的结构示意图；
图2为本发明一实施例中垂直型LED制作方法的流程图；
图3至图8为本发明一实施例中垂直型LED制作过程中的剖面示意图；
图9a至图9c为本发明一实施例中不同形状布拉格反射镜结构的俯视图。
具体实施方式
下面将结合示意图对本发明的垂直型LED结构及其制作方法进行更详细的描述，其中表示了本发明的优选实施例，应该理解本领域技术人员可以修改在此描述的本发明，而仍然实现本发明的有利效果。因此，下列描述应当被理解为对于本领域技术人员的广泛知道，而并不作为对本发明的限制。
为了清楚，不描述实际实施例的全部特征。在下列描述中，不详细描述公知的功能和结构，因为它们会使本发明由于不必要的细节而混乱。应当认为在任何实际实施例的开发中，必须做出大量实施细节以实现开发者的特定目标，例如按照有关系统或有关商业的限制，由一个实施例改变为另一个实施例。另外，应当认为这种开发工作可能是复杂和耗费时间的，但是对于本 领域技术人员来说仅仅是常规工作。
在下列段落中参照附图以举例方式更具体地描述本发明。根据下面说明和权利要求书，本发明的优点和特征将更清楚。需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。
请参考图2，在本实施例中，提出了一种垂直型LED制作方法，包括步骤：
S100：提供生长衬底，在所述生长衬底上依次形成有外延层和接触层；
S200：在所述接触层表面形成布拉格反射镜结构，所述布拉格反射镜结构设有开口暴露出部分所述接触层；
S300：在所述布拉格反射镜结构以及暴露出的接触层表面形成金属键合层；
S400：在所述金属键合层上形成键合衬底；
S500：剥离所述生长衬底；
S600：形成N型电极。
具体的，请参考图3，在步骤S100中，所述生长衬底100通常为蓝宝石衬底，在所述生长衬底100上形成有外延层200，其中，所述外延层200包括依次形成的N-GaN层210、发光层220和P-GaN层230；接着在所述外延层200上形成接触层300，所述接触层300为透明导电薄膜(Transparent Conductive Layer)，其材质为AZO、ITO或ZnO，其厚度范围是50nm～100nm，例如是80nm。
请参考图4，在步骤S200中，在所述接触层300表面形成布拉格反射镜(Distributed Bragg Reflection,DBR)结构400，所述布拉格反射镜结构400由两种材质交替堆叠而成，分别为第一种材质和第二种材质，其中与接触层300表面相接触的为第一种材质，第一种材质的折射率大于第二种材质的折 射率，所述第一种材质的折射率较高，优选的，第一种材质的折射率大于2.4，在本实施例中，第一种材质为TiO2，第二种材质为SiO2，在本实施例的其它实施例中，两种材质可以为其它介质材料，符合上述要求的即可。为了增加发光反射效率，所述布拉格反射镜结构400大于等于18层，即第一种材质和第二种材质堆叠起来的层数大于等于18层，或者说由大于等于9对第一种材质和第二种材质堆叠形成所述布拉格反射镜结构400。例如，所述布拉格反射镜结构400可以包括26层。如图4所示，所述布拉格反射镜结构400的层数越多，发光反射效果越佳。
在步骤S200中，所述布拉格反射镜结构400之间的开口是通过刻蚀形成的，即先形成多层薄膜，然后依次刻蚀薄膜，形成开口。请参考图9a，图9a中显示出开口410为圆形，所述开口410需要暴露出所述接触层300，方便所述接触层300与后续的金属键合层欧姆接触；请参考图9b和图9c，图9b和图9c分别示意出不同类型的开口410，在本实施例中，所述开口410可以为圆孔状或条状，只要暴露出所述接触层300即可；所述开口410的大小为3微米～50微米，例如10微米；所述开口410的总表面积占所述接触层300总表面的3％～50％，例如是20％。
请参考图5，在步骤S300中，形成金属键合层500，所述金属键合层500需要通过开口410与所述接触层300欧姆接触，所述金属键合层500为Au或AuSn，其厚度大于等于1μm，例如是3μm，其用于后续与键合衬底进行键合。
请参考图6，在步骤S400中，在所述金属键合层500上形成所述键合衬底600，所述键合衬底600的材质为Si、Cu、WCu、MoCu或者Cu的其他合金，所述键合衬底600与所述金属键合层500通过高温键合法进行键合，所述高温键合法的键合温度范围是150度～320度，优选280度。
请参考图7，在步骤S500中，使用激光或者化学剥离所述生长衬底100， 由于键合衬底600材质为金属，其散热效果更佳，因此去除所述生长衬底100。
请参考图8，在步骤S600中，形成电极，具体的，所述电极包括N型电极800和P型电极700，所述N型电极800与外延层300中的N-GaN层相连，所述P型电极700与所述键合衬底600相连，从而获得垂直型LED。
在本实施例的另外一面，还提出了一种垂直型LED结构，如图8所示，采用如上文所述的垂直型LED制作方法形成，所述结构包括：电极、键合衬底600、键合金属500、布拉格反射镜结构400、接触层300和外延层200，其中，外延层200依次包括N-GaN层、发光层和P-GaN层，N型电极800与外延层200中的N-GaN层相连，P型电极700与所述键合衬底600相连，所述键合衬底600与所述键合金属500连接，所述布拉格反射镜结构400与所述接触层300和键合金属500连接，所述布拉格反射镜结构400具有开口410，所述键合金属500通过开口410与所述接触层300连接，所述接触层300与所述外延层200中的P-GaN层连接。
综上，在本发明实施例提供的垂直型LED结构及其制作方法中，使用布拉格反射镜结构替换现有技术中的金属反射镜层作为反射镜，布拉格反射镜结构设有开口，能够确保接触层和金属键合层相连接，布拉格反射镜结构能够提高反射镜的热稳定性并且避免金属扩散，从而能够改善垂直型LED的良品率。进一步的，采用两种材质多层堆叠而成的布拉格反射镜结构，其中一层为高折射率，能够提高反射效率，使形成的垂直型LED发光效果更佳。
上述仅为本发明的优选实施例而已，并不对本发明起到任何限制作用。任何所属技术领域的技术人员，在不脱离本发明的技术方案的范围内，对本发明揭露的技术方案和技术内容做任何形式的等同替换或修改等变动，均属未脱离本发明的技术方案的内容，仍属于本发明的保护范围之内。

Claims (15)

  1. 一种垂直型LED制作方法，包括步骤：
    提供生长衬底，在所述生长衬底上依次形成有外延层和接触层；
    在所述接触层表面形成布拉格反射镜结构，在所述布拉格反射镜结构中形成多个开口暴露出部分所述接触层；
    在所述布拉格反射镜结构以及暴露出的接触层表面形成金属键合层；
    在所述金属键合层上形成键合衬底；
    剥离所述生长衬底；
    形成N型电极。
  2. 如权利要求1所述的垂直型LED制作方法，其特征在于，所述布拉格反射镜结构由第一种材质和第二种材质交替堆叠而成，与接触层表面相接触的为第一种材质，所述第一种材质为TiO2，所述第二种材质为SiO2。
  3. 如权利要求2所述的垂直型LED制作方法，其特征在于，所述布拉格反射镜结构包括大于等于9对交替堆叠的第一种材质和第二种材质。
  4. 如权利要求1所述的垂直型LED制作方法，其特征在于，所述开口的形状为圆孔状或条状。
  5. 如权利要求4所述的垂直型LED制作方法，其特征在于，所述开口的大小为3微米～50微米。
  6. 如权利要求1所述的垂直型LED制作方法，其特征在于，所述开口的总表面积占所述接触层总表面的3％～50％。
  7. 如权利要求1所述的垂直型LED制作方法，其特征在于，所述外延层包括依次形成的N-GaN层、发光层和P-GaN层。
  8. 如权利要求7所述的垂直型LED制作方法，其特征在于，所述N型 电极形成在所述N-GaN层上，所述方法还包括在所述键合衬底上形成P型电极。
  9. 如权利要求1所述的垂直型LED制作方法，其特征在于，所述接触层为AZO、ITO或ZnO。
  10. 如权利要求9所述的垂直型LED制作方法，其特征在于，所述接触层的厚度范围是50nm～100nm。
  11. 如权利要求1所述的垂直型LED制作方法，其特征在于，所述金属键合层为Au或AuSn。
  12. 如权利要求11所述的垂直型LED制作方法，其特征在于，所述金属键合层的厚度大于等于1μm。
  13. 如权利要求1所述的垂直型LED制作方法，其特征在于，所述键合衬底为Si、Cu、WCu或MoCu。
  14. 如权利要求1所述的垂直型LED制作方法，其特征在于，使用激光或者化学剥离方法剥离所述生长衬底。
  15. 一种垂直型LED结构，采用如权利要求1至14中任意一种所述的垂直型LED制作方法形成，所述结构包括：一对电极、键合衬底、键合金属、布拉格反射镜结构、接触层和外延层，其中，所述一对电极分别形成于所述外延层和键合衬底上，所述键合衬底与所述键合金属连接，所述布拉格反射镜结构与所述接触层和键合金属连接，所述布拉格反射镜结构具有多个开口，所述键合金属通过所述多个开口与所述接触层连接，所述接触层与所述外延层连接。
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