TWI509369B - 曝光方法、曝光設備、和製造裝置的方法 - Google Patents

曝光方法、曝光設備、和製造裝置的方法 Download PDF

Info

Publication number
TWI509369B
TWI509369B TW102124520A TW102124520A TWI509369B TW I509369 B TWI509369 B TW I509369B TW 102124520 A TW102124520 A TW 102124520A TW 102124520 A TW102124520 A TW 102124520A TW I509369 B TWI509369 B TW I509369B
Authority
TW
Taiwan
Prior art keywords
substrate stage
exposure
substrate
area
shot area
Prior art date
Application number
TW102124520A
Other languages
English (en)
Chinese (zh)
Other versions
TW201405254A (zh
Inventor
大豆生田吉広
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201405254A publication Critical patent/TW201405254A/zh
Application granted granted Critical
Publication of TWI509369B publication Critical patent/TWI509369B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW102124520A 2012-07-31 2013-07-09 曝光方法、曝光設備、和製造裝置的方法 TWI509369B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012170371A JP6066610B2 (ja) 2012-07-31 2012-07-31 露光方法、露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
TW201405254A TW201405254A (zh) 2014-02-01
TWI509369B true TWI509369B (zh) 2015-11-21

Family

ID=50025184

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102124520A TWI509369B (zh) 2012-07-31 2013-07-09 曝光方法、曝光設備、和製造裝置的方法

Country Status (4)

Country Link
US (1) US9541845B2 (https=)
JP (1) JP6066610B2 (https=)
KR (1) KR101660090B1 (https=)
TW (1) TWI509369B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI742311B (zh) 2017-09-29 2021-10-11 美商昂圖創新公司 用於在曝光裝置時減少未對準誤差的方法和設備
JP7022611B2 (ja) * 2018-02-06 2022-02-18 キヤノン株式会社 露光装置の制御方法、露光装置、及び物品製造方法
US12510644B2 (en) * 2018-05-25 2025-12-30 Pva Tepla Analytical Systems Gmbh Ultrasonic microscope and carrier for carrying an acoustic pulse transducer
US11687010B2 (en) 2020-02-21 2023-06-27 Onto Innovation Inc. System and method for correcting overlay errors in a lithographic process
JP7778762B2 (ja) * 2023-10-24 2025-12-02 キヤノン株式会社 ステージ装置、基板処理装置、情報処理装置、情報処理方法、プログラム及び物品の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007281097A (ja) * 2006-04-04 2007-10-25 Canon Inc 露光装置及びデバイス製造方法
JP2008071839A (ja) * 2006-09-12 2008-03-27 Canon Inc 表面位置検出方法、露光装置及びデバイスの製造方法
JP2008300579A (ja) * 2007-05-30 2008-12-11 Canon Inc 露光装置及びデバイス製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3316833B2 (ja) * 1993-03-26 2002-08-19 株式会社ニコン 走査露光方法、面位置設定装置、走査型露光装置、及び前記方法を使用するデバイス製造方法
US6118515A (en) * 1993-12-08 2000-09-12 Nikon Corporation Scanning exposure method
JP3371406B2 (ja) * 1994-08-26 2003-01-27 株式会社ニコン 走査露光方法
JPH09306833A (ja) * 1996-03-14 1997-11-28 Nikon Corp 露光方法
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
US6090510A (en) * 1997-03-25 2000-07-18 Nikon Corporation Method for scanning exposure
JP2000106340A (ja) * 1997-09-26 2000-04-11 Nikon Corp 露光装置及び走査露光方法、並びにステージ装置
JPH11233433A (ja) * 1998-02-17 1999-08-27 Nikon Corp 走査型露光装置及び走査露光方法並びにデバイス製造方法
JP2000100721A (ja) * 1998-07-21 2000-04-07 Nikon Corp 走査露光方法および走査型露光装置ならびにデバイスの製造方法
JP3230675B2 (ja) 1999-06-14 2001-11-19 株式会社ニコン 走査露光方法、走査型露光装置、及び前記方法を用いるデバイス製造方法
JP2001168024A (ja) * 1999-09-29 2001-06-22 Nikon Corp 露光装置及びデバイス製造方法
US6381004B1 (en) * 1999-09-29 2002-04-30 Nikon Corporation Exposure apparatus and device manufacturing method
JP3870058B2 (ja) * 2001-10-05 2007-01-17 キヤノン株式会社 スキャン露光装置及び方法並びにデバイスの製造方法
JP4840958B2 (ja) * 2003-10-21 2011-12-21 キヤノン株式会社 走査露光装置及びデバイス製造方法
JP2009295932A (ja) * 2008-06-09 2009-12-17 Canon Inc 露光装置及びデバイス製造方法
US8488109B2 (en) * 2009-08-25 2013-07-16 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
JP5498243B2 (ja) * 2010-05-07 2014-05-21 キヤノン株式会社 露光装置、露光方法及びデバイス製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007281097A (ja) * 2006-04-04 2007-10-25 Canon Inc 露光装置及びデバイス製造方法
JP2008071839A (ja) * 2006-09-12 2008-03-27 Canon Inc 表面位置検出方法、露光装置及びデバイスの製造方法
JP2008300579A (ja) * 2007-05-30 2008-12-11 Canon Inc 露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
KR101660090B1 (ko) 2016-09-26
TW201405254A (zh) 2014-02-01
JP6066610B2 (ja) 2017-01-25
JP2014029956A (ja) 2014-02-13
US20140036248A1 (en) 2014-02-06
KR20140016821A (ko) 2014-02-10
US9541845B2 (en) 2017-01-10

Similar Documents

Publication Publication Date Title
KR101444981B1 (ko) 노광 장치, 노광 방법 및 디바이스 제조 방법
JP3572430B2 (ja) 露光方法及びその装置
TWI397778B (zh) 曝光設備和製造裝置的方法
CN107615473B (zh) 移动体的控制方法、曝光方法、器件制造方法、移动体装置及曝光装置
TWI509369B (zh) 曝光方法、曝光設備、和製造裝置的方法
JP5739837B2 (ja) 露光装置、露光方法及びデバイス製造方法
US9746789B2 (en) Exposure apparatus, and method of manufacturing article
JP5137879B2 (ja) 露光装置及びデバイス製造方法
JP5734344B2 (ja) 露光装置および物品の製造方法
JP3754743B2 (ja) 表面位置設定方法、ウエハ高さ設定方法、面位置設定方法、ウエハ面位置検出方法および露光装置
JP6327861B2 (ja) リソグラフィ装置、リソグラフィ方法、および物品の製造方法
JP2010258085A (ja) 面位置検出方法
US8416389B2 (en) Exposure apparatus and method of manufacturing device
JP3408118B2 (ja) 投影露光方法および装置
JP5773735B2 (ja) 露光装置、および、デバイス製造方法
JPH1187233A (ja) 投影露光装置
TWI896908B (zh) 曝光裝置、曝光方法及物品之製造方法
JP2014143429A (ja) 露光装置、露光方法及びデバイス製造方法
JP6053316B2 (ja) リソグラフィー装置、および、物品製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees