TWI508168B - Plasma processing device and plasma processing method - Google Patents

Plasma processing device and plasma processing method Download PDF

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Publication number
TWI508168B
TWI508168B TW101148068A TW101148068A TWI508168B TW I508168 B TWI508168 B TW I508168B TW 101148068 A TW101148068 A TW 101148068A TW 101148068 A TW101148068 A TW 101148068A TW I508168 B TWI508168 B TW I508168B
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TW
Taiwan
Prior art keywords
pulse
frequency
plasma
period
plasma processing
Prior art date
Application number
TW101148068A
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English (en)
Chinese (zh)
Other versions
TW201421569A (zh
Inventor
金澤峻介
安井尚輝
森本未知数
大越康雄
Original Assignee
日立全球先端科技股份有限公司
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Publication of TW201421569A publication Critical patent/TW201421569A/zh
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Publication of TWI508168B publication Critical patent/TWI508168B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32302—Plural frequencies
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW101148068A 2012-11-27 2012-12-18 Plasma processing device and plasma processing method TWI508168B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012258086A JP6002556B2 (ja) 2012-11-27 2012-11-27 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
TW201421569A TW201421569A (zh) 2014-06-01
TWI508168B true TWI508168B (zh) 2015-11-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW101148068A TWI508168B (zh) 2012-11-27 2012-12-18 Plasma processing device and plasma processing method

Country Status (4)

Country Link
US (2) US8992724B2 (cg-RX-API-DMAC7.html)
JP (1) JP6002556B2 (cg-RX-API-DMAC7.html)
KR (1) KR101425307B1 (cg-RX-API-DMAC7.html)
TW (1) TWI508168B (cg-RX-API-DMAC7.html)

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WO2016104098A1 (ja) * 2014-12-25 2016-06-30 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
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JP6670692B2 (ja) * 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
CN107295739A (zh) * 2016-04-12 2017-10-24 北京北方华创微电子装备有限公司 产生脉冲等离子体的方法及其等离子体设备
US10340123B2 (en) * 2016-05-26 2019-07-02 Tokyo Electron Limited Multi-frequency power modulation for etching high aspect ratio features
CN107172818B (zh) * 2017-07-12 2023-06-16 信丰迅捷兴电路科技有限公司 一种全自动的蚀刻装置及其控制方法
KR102435263B1 (ko) * 2017-07-25 2022-08-23 삼성전자주식회사 플라즈마 처리 장치 및 방법, 및 이를 이용한 반도체 장치의 제조 방법
KR20250153883A (ko) 2017-11-17 2025-10-27 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
JP7289313B2 (ja) 2017-11-17 2023-06-09 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理のためのイオンバイアス電圧の空間的および時間的制御
WO2019099870A1 (en) 2017-11-17 2019-05-23 Advanced Energy Industries, Inc. Synchronized pulsing of plasma processing source and substrate bias
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
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US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
JP6792754B2 (ja) * 2018-11-14 2020-12-02 株式会社エスイー プラズマを用いた処理装置及び処理対象物にプラズマを照射する処理を行う処理方法
KR102743927B1 (ko) 2019-01-10 2024-12-17 삼성전자주식회사 플라즈마 균일성 제어 방법 및 플라즈마 프로세싱 시스템
US10593518B1 (en) * 2019-02-08 2020-03-17 Applied Materials, Inc. Methods and apparatus for etching semiconductor structures
CN111916327B (zh) * 2019-05-10 2023-04-28 中微半导体设备(上海)股份有限公司 多频率多阶段的等离子体射频输出的方法及其装置
TW202536923A (zh) 2019-07-12 2025-09-16 新加坡商Aes 全球公司 具有控制開關之偏壓供應器
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KR20220113502A (ko) * 2019-12-13 2022-08-12 램 리써치 코포레이션 보우 제어와 마스크 선택도 사이의 균형 (balance) 을 달성하기 위한 멀티-상태 펄싱 (multi-state pulsing)
JP7511423B2 (ja) * 2019-12-17 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、及び電源システム
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Also Published As

Publication number Publication date
JP2014107363A (ja) 2014-06-09
JP6002556B2 (ja) 2016-10-05
US9502217B2 (en) 2016-11-22
KR20140067870A (ko) 2014-06-05
US8992724B2 (en) 2015-03-31
TW201421569A (zh) 2014-06-01
US20140148016A1 (en) 2014-05-29
KR101425307B1 (ko) 2014-08-01
US20150144594A1 (en) 2015-05-28

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