TWI505303B - 摻雜ZrO2之電容器材料及結構,製造介電材料結構的方法,及製造微電子裝置的方法 - Google Patents
摻雜ZrO2之電容器材料及結構,製造介電材料結構的方法,及製造微電子裝置的方法 Download PDFInfo
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- TWI505303B TWI505303B TW099112063A TW99112063A TWI505303B TW I505303 B TWI505303 B TW I505303B TW 099112063 A TW099112063 A TW 099112063A TW 99112063 A TW99112063 A TW 99112063A TW I505303 B TWI505303 B TW I505303B
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- 239000000463 material Substances 0.000 title claims description 145
- 239000003989 dielectric material Substances 0.000 title claims description 54
- 239000003990 capacitor Substances 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 16
- 238000004377 microelectronic Methods 0.000 title claims description 7
- 239000002243 precursor Substances 0.000 claims description 57
- 229910052739 hydrogen Inorganic materials 0.000 claims description 45
- 239000002131 composite material Substances 0.000 claims description 43
- 239000001257 hydrogen Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 125000000217 alkyl group Chemical group 0.000 claims description 41
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 41
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 36
- 125000003118 aryl group Chemical group 0.000 claims description 29
- 239000010955 niobium Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 28
- 239000011575 calcium Substances 0.000 claims description 26
- 238000005275 alloying Methods 0.000 claims description 23
- 229910052799 carbon Inorganic materials 0.000 claims description 23
- 150000002739 metals Chemical class 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 21
- -1 etc. ) Chemical group 0.000 claims description 21
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 20
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 20
- 229920002554 vinyl polymer Polymers 0.000 claims description 20
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 17
- 229910052715 tantalum Inorganic materials 0.000 claims description 17
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 17
- 229910052726 zirconium Inorganic materials 0.000 claims description 17
- 229910052758 niobium Inorganic materials 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 15
- 229910052732 germanium Inorganic materials 0.000 claims description 15
- 125000004648 C2-C8 alkenyl group Chemical group 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- 229910052723 transition metal Inorganic materials 0.000 claims description 14
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- 229910044991 metal oxide Inorganic materials 0.000 claims description 13
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- 239000011777 magnesium Substances 0.000 claims description 12
- 150000003624 transition metals Chemical class 0.000 claims description 12
- 229910052727 yttrium Inorganic materials 0.000 claims description 12
- 125000004400 (C1-C12) alkyl group Chemical group 0.000 claims description 11
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 11
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 11
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 11
- 238000003475 lamination Methods 0.000 claims description 10
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 9
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 9
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052712 strontium Inorganic materials 0.000 claims description 9
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- 229910052735 hafnium Inorganic materials 0.000 claims description 8
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 8
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 8
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 7
- 125000004642 (C1-C12) alkoxy group Chemical group 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 150000007942 carboxylates Chemical group 0.000 claims description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 6
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 6
- 125000000882 C2-C6 alkenyl group Chemical group 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 5
- XSQUKJJJFZCRTK-UHFFFAOYSA-N isourea group Chemical group NC(O)=N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 5
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 5
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052776 Thorium Inorganic materials 0.000 claims description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims description 4
- 125000002947 alkylene group Chemical group 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 3
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 3
- 238000005019 vapor deposition process Methods 0.000 claims description 3
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims description 2
- HJTAZXHBEBIQQX-UHFFFAOYSA-N 1,5-bis(chloromethyl)naphthalene Chemical compound C1=CC=C2C(CCl)=CC=CC2=C1CCl HJTAZXHBEBIQQX-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- GOLCXWYRSKYTSP-UHFFFAOYSA-N arsenic trioxide Inorganic materials O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims 17
- 239000010703 silicon Substances 0.000 claims 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 13
- 229910052692 Dysprosium Inorganic materials 0.000 claims 5
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims 5
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims 4
- 150000003573 thiols Chemical class 0.000 claims 4
- 229910052716 thallium Inorganic materials 0.000 claims 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 3
- 229910000314 transition metal oxide Inorganic materials 0.000 claims 3
- 229910052797 bismuth Inorganic materials 0.000 claims 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 2
- 229910052762 osmium Chemical group 0.000 claims 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical group [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 2
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 claims 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 41
- 239000010408 film Substances 0.000 description 39
- 230000010287 polarization Effects 0.000 description 10
- 150000001768 cations Chemical class 0.000 description 8
- 125000001424 substituent group Chemical group 0.000 description 8
- 229910052684 Cerium Inorganic materials 0.000 description 7
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- 238000010586 diagram Methods 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- 239000000395 magnesium oxide Substances 0.000 description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
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- 239000003446 ligand Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- MRMOZBOQVYRSEM-UHFFFAOYSA-N tetraethyllead Chemical compound CC[Pb](CC)(CC)CC MRMOZBOQVYRSEM-UHFFFAOYSA-N 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 3
- 125000004103 aminoalkyl group Chemical group 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 229910000410 antimony oxide Inorganic materials 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 1
- 125000002733 (C1-C6) fluoroalkyl group Chemical group 0.000 description 1
- 125000000041 C6-C10 aryl group Chemical group 0.000 description 1
- BPYJCNRFSUNLGN-UHFFFAOYSA-N CN(C)[Ru].[Ru] Chemical compound CN(C)[Ru].[Ru] BPYJCNRFSUNLGN-UHFFFAOYSA-N 0.000 description 1
- KSSJBGNOJJETTC-UHFFFAOYSA-N COC1=C(C=CC=C1)N(C1=CC=2C3(C4=CC(=CC=C4C=2C=C1)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)C1=CC(=CC=C1C=1C=CC(=CC=13)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)C1=CC=C(C=C1)OC Chemical compound COC1=C(C=CC=C1)N(C1=CC=2C3(C4=CC(=CC=C4C=2C=C1)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)C1=CC(=CC=C1C=1C=CC(=CC=13)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)C1=CC=C(C=C1)OC KSSJBGNOJJETTC-UHFFFAOYSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910007926 ZrCl Inorganic materials 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000005160 aryl oxy alkyl group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 125000004427 diamine group Chemical group 0.000 description 1
- 229930004069 diterpene Natural products 0.000 description 1
- 125000000567 diterpene group Chemical group 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- SNOOUWRIMMFWNE-UHFFFAOYSA-M sodium;6-[(3,4,5-trimethoxybenzoyl)amino]hexanoate Chemical compound [Na+].COC1=CC(C(=O)NCCCCCC([O-])=O)=CC(OC)=C1OC SNOOUWRIMMFWNE-UHFFFAOYSA-M 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Description
依據美國專利法35 USC 119,本案請求受益於Jeffrey F. Roeder等人於2009年4月16日申請且發明名稱為「摻雜ZrO2
之電容器材料及結構」之美國臨時專利申請案61/170,071的優先權,並且於本文中以引用方式併入該臨時專利申請案61/170,0712之全文揭示內容,以針對各種目的供做參考。
本發明有關於複合介電材料以及包含此類複合介電材料的介電材料結構,例如鐵電電容、動態隨機存取記憶裝置等等。
DRAM電容器是採用ZrO2
基底的介電材料(ZrO2
based dielectrics)來產生電流。在管理這類材料的漏電性以及穩定此類材料使其相對於低介電係數形態(單斜晶型,ε~40)而言優先處於高介電係數形態(立方體/四邊形晶型,ε~20)的方面上,存在著數個挑戰。
可使用Al2
O3
中間層來減輕氧化鋯基底介電材料的漏電情形。在平行板電容中若存在這類中間層,會對總體電荷儲存量造成不良影響。此種不良影響的發生原因是由於裝置的總體電容相當於其多個個體電容的逆序和(inverse sum),因而與該些構成膜層的介電常數直接相關聯。
通常期望達成介電常數超過40以上的介電材料。
本發明有關於複合介電材料,以及包含此類複合介電材料的微電子裝置及裝置前驅物結構。
在一態樣中,本發明有關於一種複合介電材料,該複合介電材料包含:(a)一前期過渡金屬或其金屬氧化物之基底材料,以及(b)一種摻雜、共沉積、合金化或層疊用的第二材料,該第二材料選自於鈮(Nb)、鍺(Ge)、鉭(Ta)、鑭(La)、釔(Y)、鈰(Ce)、鐠(Pr)、釹(Nd)、釓(Gd)、鏑(Dy)、鍶(Sr)、鋇(Ba)、鈣(Ca)、鎂(Mg)及此類金屬之氧化物以及氧化鋁的群組中,以做為摻雜或合金化的第二材料。
在一進一步的態樣中,本發明有關於一種複合介電材料,該複合介電材料包含一前期過渡金屬或其金屬氧化物之基底材料,以及一摻雜、共沉積、合金化或層疊用之第二材料,該第二材料選自於三氧化二鋁(Al2
O3
)、三氧化二鑭(La2
O3
)、氧化鍶(SrO)、三氧化二釔(Y2
O3
)、氧化鎂(MgO)、二氧化鈰(CeO2
)、三氧化二鐠(Pr2
O3
)、三氧化二釹(Nd2
O3
)與三氧化二鏑(Dy2
O3
)之群組中,其中當三氧化二鋁存在時是做為摻雜或合金化之第二材料。
在另一態樣中,本發明有關於一種含有本發明之複合介電材料的電容器結構。
本發明的一進一步態樣是關於一種製造介電材料結構的方法,該方法包括沉積一前期過渡金屬或其金屬氧化物之基底材料在一基板上,以及以一第二材料對該基底材料進行摻雜、共沉積、合金化或層疊化,該第二材料選自於鈮(Nb)、鍺(Ge)、鉭(Ta)、鑭(La)、釔(Y)、鈰(Ce)、鐠(Pr)、釹(Nd)、釓(Gd)、鏑(Dy)、鍶(Sr)、鋇(Ba)、鈣(Ca)、鎂(Mg)、該些金屬之氧化物及氧化鋁的群組中,以做為用以摻雜或合金化之第二材料。
本發明的又一進一步態樣是關於一種製造介電材料結構的方法,該方法包含沉積一前期過渡金屬或其金屬氧化物之基底材料在一基板上,以及以一第二材料對該基底材料進行摻雜、共沉積、合金化或層疊化,該第二材料選自於三氧化二鋁(Al2
O3
)、三氧化二鑭(La2
O3
)、氧化鍶(SrO)、三氧化二釔(Y2
O3
)、氧化鎂(MgO)、二氧化鈰(CeO2
)、三氧化二鐠(Pr2
O3
)、三氧化二釹(Nd2
O3
)與三氧化二鏑(Dy2
O3
)之群組中,其中當三氧化二鋁存在時是做為用以摻雜或合金化之第二材料。
本發明的又一態樣是關於一種製造微電子裝置的方法,該方法包括使用氣相沉積製程來形成一根據本發明的複合介電材料。
以下將選自於鋁(Al)、鈮(Nb)、鍺(Ge)、鉭(Ta)、鑭(La)、釔(Y)、鈰(Ce)、鐠(Pr)、釹(Nd)、釓(Gd)、鏑(Dy)、鍶(Sr)、鋇(Ba)、鈣(Ca)與鎂(Mg)之群組中的金屬以及這些金屬之氧化物於下文稱為「第二材料」,同時由前期過渡金屬及其對應金屬氧化物稱為「基底材料」。
當用於本文中時,「層疊之第二材料」一詞是指一第二材料層鄰接且接觸一或多層的基底材料層。
藉由以下揭示內容和後附申請專利範圍將能更加完整地瞭解本發明的其他態樣、特徵和實施例。
本發明有關於可用在諸如DRAM及其它微電子裝置等應用中的複合介電材料結構。
在另一態樣中,本發明有關於一種複合介電材料,該複合介電材料包含一前期金屬或其金屬氧化物之基底材料以及一摻雜、共沉積、合金化和層疊用之第二材料。
本發明預期摻雜一介電材料,以求相對於不含該第二材料的對應介電材料而言,能達到a)控制漏電,b)增進所欲相態之材料的穩定度,以及c)提高介電常數的作用。
執行此摻雜動作以在該介電材料中達到任何適當的摻雜濃度。在不同實施例中,舉例而言,摻質濃度的範圍可從1013
cm-3
至1018
cm-3
、從1014
cm-3
至1017
cm-3
、從1014
cm-3
至1016
cm-3
或任何適當範圍。在其他實施例中,預期摻質濃度為1至5原子百分比(at.%),且在另一些實施例中可為1至3原子百分比(at.%)。
在具體實施例中,本發明包括:i)以較高介電常數的膜層來替換較低介電常數的中間層;ii)以較高介電常數的膜層來替換較低介電常數的中間層,並且使該電容器材料進行退火,以造成相互擴散作用(interdiffusion);iii)對一介電層進行摻雜或合金化;以及iv)操縱該電容器材料的膜層厚度。
可用於本發明各實施方式中之介電結構的基底材料包括鋯、鈦和其他前期過渡金屬,例如選自於鈦(Ti)、鋯(Zr)、鉿(Hf)、釩(V)、鈮(Nb)、鉭(Ta)、鉻(Cr)、鉬(Mo)、鎢(W)、鎝(Tc)與錸(Re)之群組中的金屬,以及這些金屬的氧化物。在含有此類基底材料的結構中具有中間層(interlayers)、摻質和合金,其中該中間層、摻雜或合金不同於該基底材料本身,且該中間層、摻質或合金可包含多種金屬,其選自於下列群組中:鈮(Nb)、鍺(Ge)、鉭(Ta)、鑭(La)、釔(Y)、鈰(Ce)、鐠(Pr)、釹(Nd)、釓(Gd)、鏑(Dy)、鍶(Sr)、鋇(Ba)、鈣(Ca)、鎂(Mg)以及這些金屬的氧化物。
可利用物理氣相沉積(PVD)或其他氣相沉積技術有效地形成本發明之薄膜介電結構。更佳可藉由原子層沉積來沉積本發明的介電膜層,以用於涉及高深寬比特徵結構的應用中。
在一態樣中,本發明有關於一種沉積製程,例如CVD或ALD製程,其包括:使用一前驅物之蒸氣(vapor)接觸一基板,以在該基板上沉積含有鋯、鉿、鈦或其他前期過渡金屬(稱為該金屬或類金屬物種M)的一膜層,使用的前驅物選自具有下化學式的化合物群組中:M(NR2
)4
,其中每個R可彼此相同或不同,且各自獨立選自於氫、C1
-C12
烷基、C3
-C10
環烷基、C2
-C8
烯基(例如,乙烯基(vinyl)、烯丙基(allyl),等等)、C1
-C12
烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基與三烷基矽烷基)、C6
-C10
芳基、-(CH2
)x
NR’R”、-(CH2
)x
OR”’及-NR’R”之群組中,其中x=1、2或3;以及R’、R”和R”’可彼此相同或不同且各自獨立地選自於氫(H)和C1
-C12
烷基之群組中;(R1
NC(R3
R4
)m
NR2
)(OX-n)/2
MXn
,其中R1
、R2
、R3
、R4
與X可彼此相同或不同,且各自獨立地選自於氫、C1
-C12
烷基、C3
-C10
環烷基、經取代或未經取代的環戊二烯基、C2
-C6
烯基(例如,乙烯基、烯丙基,等等)、C1
-C12
烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基與三烷基矽烷基)、C6
-C10
芳基、-(CH2
)x
NR’R”、-(CH2
)x
OR’’’與-NR’R”之群組中,其中x=1、2或3;以及R’、R”與R’’’可彼此相同或不同,且各自獨立地選自於氫(H)和C1
-C12
烷基之群組中,其中標示碳數序列的該些下標符號1至12表示該烷基取代基中的碳原子數目;m是數值介於1至6的一整數,以及X選自C1
-C12
烷氧基、羧酸根(carboxylates)、β-二酮根(beta-diketonates)、β-二酮亞胺根(β-diketiminates)與β-二酮亞胺根(β-diketoiminates)、胍基、脒基及異脲基之群組中;此外,其中C(R3
R4
)m
為伸烷基;OX為該金屬M的氧化態;n為數值介於0至OX間的一整數;m為數值介於1至6的一整數;M(E)2
(OR3
)2
,E是經取代的二酮根(substituted dionato),每個R3
可彼此相同或不同,且各自獨立地選自於C1
-C12
烷基、C3
-C10
環烷基、C2
-C8
烯基(例如,乙烯基、烯丙基,等等)、C1
-C12
烷基矽烷基(包括,單烷基矽烷基、二烷基矽烷基以及三烷基矽烷基)、C6
-C10
芳基、-(CH2
)x
NR’R”、-(CH2
)x
OR”’及-NR’R”之群組中,其中x=1、2或3;以及R’、R”和R”’可彼此相同或不同,且各自獨立地選自於氫(H)和C1
-C12
烷基之群組中,並且較佳選自於i
-丙基和t
-丁基之群組中,其中i
-丙基為異丙基以及t
-丁基為第三丁基;M(OR3
)4
,其中每個R3
可彼此相同或不同,且各自獨立地選自於C1
-C12
烷基、C3
-C10
環烷基、C2
-C8
烯基(例如,乙烯基、烯丙基,等等)、C1
-C12
烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基以及三烷基矽烷基)、C6
-C10
芳基、-(CH2
)x
NR’R”、-(CH2
)x
OR”’及-NR’R”,其中x=1、2或3;以及R’、R”及R”’可彼此相同或不同,且各自獨立地選自於氫(H)及C1
-C12
烷基之群組中,且較佳選自於i
-丙基和t
-丁基之群組中;M(OPr-i
)4
-IPA,其中IPA為異丙醇,以及OPr-i
是異丙氧基;(R6
R7
N)2
M(R8
NC(R3
R4
)m
NR9
),其中R3
、R4
、R6
與R7
、R8
與R9
可彼此相同或不同,且各自獨立地選自於氫、C1
-C12
烷基、C3
-C10
環烷基、C2
-C8
烯基(例如,乙烯基、烯丙基,等等)、C1
-C12
烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基及三烷基矽烷基)、C6
-C10
芳基、-(CH2
)x
NR’R”、-(CH2
)x
OR”’及-NR’R”之群組中,其中x=1、2或3;以及R’、R”及R”’可彼此相同或不同,且各自獨立地選自於氫(H)和C1
-C12
烷基之群組中;以及m是數值介於1至6的一整數;選自於(脒基)OX-n
MXn
、(胍基)OX-n
MXn
及(異脲基)OX-n
MXn
之群組中的化合物,其中每個X可彼此相同或不同,且各自獨立地選自於氫、C1
-C12
烷基、C3
-C10
環烷基、經取代或未經取代的環戊二烯基、C2
-C6
烯基(例如,乙烯基、烯丙基,等等)、C1
-C12
烷基矽烷基(包括,單烷基矽烷基、二烷基矽烷基及三烷基矽烷基)、C6
-C10
芳基、-(CH2
)x
NR’R”、-(CH2
)x
OR’’’及-NR’R”之群組中,其中x=1、2或3;以及R’、R”與R’’’可彼此相同或不同,且各自獨立地選自於氫(H)和C1
-C12
烷基之群組中,其中標示碳數序列的該些下標符號1至12表示該烷基取代基中的碳原子數目;m是數值介於1至6的一整數;此外,X選自C1
-C12
烷氧基、羧酸根、β-二酮根、β-二酮亞胺根、β-二酮亞胺根(beta-diketoiminates)、胍基、脒基及異脲基之群組中;OX是金屬M的氧化態;n是數值介於0至OX間的一整數;m是數值介於1至6的一整數;以及具有式RN=M’(NR’R”)3
之化合物,其中R是異丙基、t-丁基或t-戊基;並且其中R’與R”可彼此相同或不同且,且各自獨立地選自於C1
-C4
烷基之群組中;其中M是一前期過渡金屬物種(early transition metal species),例如鋯、鉿或鈦,且其中M’是鉭或鈮。
可用來形成本發明介電材料的前驅物包括該些在國際專利申請案公開號WO2008/128141以及國際專利申請案申請序號PCT/US09/69054中所描述的前驅物,且該些文獻以引用方式將其揭示內容納入本文中以供參考。
可採用鋯前驅物藉由例如化學氣相沉積與原子層沉積來形成本發明的含鋯介電複合材料,其中與鋯中心原子配位的每個配位子(ligand)可為胺或二胺基團,且該些配位子之至少其中一者是二胺。該些胺和二胺配位子之每一者上可經取代或未經取代,並且當配位子上經過取代時,其上可包含C1
-C8
烷基取代基,該鋯前驅物中的各個取代基可能彼此相同或不同。可藉由合成反應來製造此類前驅物,在合成反應中,在四胺基鋯分子上之該些胺基的其中一個胺基被置換成二胺基。可用於不同應用中的鋯前驅物包括四氯化鋯(ZrCl4
)。
在不同實施例中,同樣地,可用來形成含鉿膜層的鉿前驅物包括四氯化鉿(HfCl4
)。
可用於本發明廣義實施方式中的其他金屬前驅物包括該些具有下式(A)、(B)、(C)和(D)的前驅物:
R3 n
M[N(R1
R4
)(CR5
R6
)m
N(R2
)]OX-n
(A)
R3 n
M[E(R1
)(CR5
R6
)m
N(R2
)]OX-n
(B)
R3 n
M[(R2
R3’
C=CR4
)(CR5
R6
)m
N(R1
)]OX-n
(C)
R3 n
M[E(CR5
R6
)m
N(R1
R2
)]OX-n
(D)
其中:R1
、R2
、R3
、R3’
、R4
、R5
與R6
可能彼此相同或不同,且各自獨立地選自於H、C1
-C6
烷基、C1
-C6
烷氧基、C6
-C14
芳基、矽烷基、C3
-C18
烷基矽烷基、C1
-C6
氟烷基、醯胺、胺基烷基、烷氧基烷基、芳氧基烷基、亞胺基烷基、乙醯基烷基;OX是該金屬M的氧化態;n是數值介於0至OX間的一整數;m是數值介於1至6的一整數;M為鈦(Ti)、鋯(Zr)或鉿(Hf);以及E是氧(O)或硫(S)。
這些前驅物具有下列結構式:
在CVD/ALD應用上,上述具有式(A)~(D)的前驅物展現出良好的熱穩定性及傳輸性質(transport properties)。
適合做為該些前驅物(A)~(D)上之取代基的胺基烷基、烷氧基烷基、芳烴氧基烷基、亞胺基烷基和乙醯基烷基包括具有下列結構式的基團:
胺基烷基類其中:上述的伸甲基(-CH2
-)亦可選用其他的二價碳氫基團(hydrocarbyl);每個R1
~R4
可彼此相同或不相同,且各自獨立地選自於氫、C1
-C6
烷基與C6
-C10
芳基之群組中;每個R5
和R6
可彼此相同或不同,且各自獨立地選自於氫、C1
-C6
烷基之群組中;n和m分別獨立地選自介於0至4之間的數值,但m和n不能同時為0;以及,x選自於1至5間;
烷氧基烷基與芳烴基烷基類其中,R1
~R4
各者可彼此相同或不相同,且各自獨立地選自於氫、C1
-C6
烷基與C6
-C10
芳基之群組中;R5
選自於氫、C1
-C6
烷基與C6
-C10
芳基之群組中;以及n和m獨立地選自介於0至4之間的數值,但m和n不能同時為0;
與
亞胺基烷基類其中每個R1
、R2
、R3
、R4
與R5
可彼此相同或不相同,且各自獨立地選自於氫、C1
-C6
烷基與C6
-C10
芳基之群組中;每個R1’
和R2’
可彼此相同或不同,且各自獨立地選自於氫、C1
-C6
烷基C6
-C10
芳基之群組中;n和m分別獨立地選自介於0至4之間的數值,但m和n不能同時為0;
乙醯基烷基類
其中,R1
~R4
每一者可彼此相同或不相同,且各自獨立地選自於氫、C1
-C6
烷基與C6
-C10
芳基之群組中;R5
選自於氫、羥基、乙醯氧基、C1
-C6
烷基、C1
-C12
烷基胺基、C6
-C10
芳基與C1
-C5
烷氧基之群組中;以及n和m獨立地選自介於0至4之間的數值,但m和n不能同時為0。
另一群可用來實施本發明以形成含鋯膜層的鋯前驅物包括以下標示為「ZR-1」至「ZR-7」的鋯前驅物。
以及該氮原子之取代基不是異丙基,而是任何適當有機取代基團的對應化合物,舉例而言,包括在化合物中之每個此種氮原子取代基(可彼此相同或不同)各自獨立選自於氫、C1
-C12
烷基、C3
-C10
環烷基、C2
-C8
烯基(例如,乙烯基、烯丙基,等等)、C1
-C12
烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基與三烷基矽烷基)、C6
-C10
芳基、-(CH2
)x
NR’R”、-(CH2
)x
OR”’及-NR’R”之群組中的該些化合物,其中x=1、2或3,以及R’、R”和R”’可彼此相同或不同且各自獨立地選自於氫(H)和C1
-C12
烷基之群組中。
以及該氮原子之取代基不是所具體顯示之烷基取代基,而是包含任意合適有機取代基團的對應化合物,舉例而言,包括在化合物中之每個此種氮原子取代基(可彼此相同或不同)各自獨立選自於氫、C1
-C12
烷基、C3
-C10
環烷基、C2
-C8
烯基(例如,乙烯基、烯丙基,等等)、C1
-C12
烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基與三烷基矽烷基)、C6
-C10
芳基、-(CH2
)x
NR’R”、-(CH2
)x
OR”’及-NR’R”之群組中的該些化合物,其中x=1、2或3,以及R’、R”和R”’可彼此相同或不同且各自獨立地選自於氫(H)和C1
-C12
烷基之群組中。
可用來實施本發明以形成含鈦複合介電材料的鈦前驅物包括選自下列由TI-1至TI-5所構成之群組中的前驅物:
應理解可採用各種不同的前驅物來形成本發明的複合介電材料。
在本文中,「膜(film)」一詞意指厚度小於1000微米的一沉積材料層,例如其數值可從1000微米至單層原子厚度。在不同實施例中,實施本發明之沉積材料層的膜層厚度可例如小於100微米、10微米或1微米,或者可視特定應用而定,在不同薄膜形態(thin film regimes)中膜層厚度可小於200、100或50奈米。在本文中,「薄膜(thin film)」一詞意指厚度小於1微米的一材料層。
應注意,除非內文中另有清楚指明,否則文中及後附申請專利範圍中所使用的單數形用語「一」、「一種」和「該」亦包含複數之意。
本文中,碳數範圍的標示(例如C1
-C12
烷基)意欲涵蓋落在此範圍內之每種碳數的構成基團,因此,在所述範圍內的每個居間碳數(intervening carbon number)及所述的任何其他碳數或居間碳數亦涵蓋在內,並可進一步理解,落在所述碳數範圍中的碳數子範圍(sub-range)亦包含在本發明範疇中的多個較小碳數範圍內;本發明包含該等明確排除一碳數或多種碳數的碳數範圍,並且本發明亦涵蓋該些排除掉所述範圍之碳數上下限值(limits)其中一者或兩者的子範圍。因此,C1
-C12
烷基意欲包含甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一烷基與十二烷基,且包括這些烷基種類的直鏈與支鏈基團。因此,可理解在本發明具體實施例中,證實一碳數範圍(例如,C1
-C12
)可廣義地適用於一取代基團時,其進一步限縮的碳數範圍(即,碳數範圍落在該取代基團之較廣義界定範圍中的基團子群組)亦應能實施。舉例而言,在本發明的數個特定實施例中,可更嚴格描述該碳數範圍(例如,C1
-C12
烷基)包含多個子範圍,例如C1
-C4
烷基、C2
-C8
烷基、C2
-C4
烷基、C3
-C5
烷基或其他落在該廣碳數範圍中的子範圍。
在一具體態樣中,本發明有關於一種多疊介電結構,在該結構中,該基底材料是一前期過渡金屬或其金屬氧化物,並且該基底材料中可摻雜或沉積有選自於下列群組中的一種或多種選自於Nb、Ge、Ta、La、Y、Ce、Pr、Nd、Gd、Dy、Sr、Ba、Ca、Mg之群組中的金屬以及這些金屬的氧化物。
可使用適合的前驅物做為摻雜物種之來源材料,以進行摻雜。例如,當採用鍺做為摻雜物種時,可使用具有下式的前驅物:
其中:R’與R”可彼此相同或不同,且獨立地選自於H、C1
-C6
烷基、C5
-C10
環烷基、C6
-C10
芳基及-Si(R3
)3
之群組中,其中每個R3
獨立地選自於C1
-C6
烷基之中;以及每個X獨立地選自於C1
-C6
烷基、C1
-C6
烷氧基、-NR1
R2
和-C(R3
)3
之群組中,其中R1
、R2
和R3
各自獨立地選自於氫(H)、C1
-C6
烷基、C5
-C10
環烷基、C6
-C10
芳基與-Si(R4
)3
之群組中,其中每個R4
各別獨立地選自於C1
-C6
烷基之中。
具有此種結構式的較佳鍺前驅物包括{nBuC(iPrN)2
}2
Ge,在本文中亦標示為GeM。也可採用諸如肆(二甲胺基)鍺的鍺前驅物。
在具體實施例中的介電電容器結構可具有如第1~3圖所示的形式。
如第1圖所示,該電容器包含一基底材料層1以及一第二材料層2。在此種電容器中,其電容值藉由下列公式表示:t/Ctotal=t1/C1+t2/C2,其中t是厚度,C是電容值。
在第2圖的電容器結構中,該介電基底材料摻雜有第二材料。
在第3圖的電容器結構中,沉積該介電基底材料而與該第二材料鄰接。在此種電容器中,其電容值以下列公式表示:Ctotal=V1C1+V2C2,其中C是電容,V是體積。
在本發明的電容器結構中,第二材料是一摻雜物種(dopant species),並且可使用該些物種的離子介電極化率製表,例如第4圖所示之該些物種的離子介電極化率週期表,根據離子介電極化率來選出適當的摻雜物種,其中該離子介電極化率是以為表示單位,且第5圖顯示出單價陽離子之介電極化率與離子半徑立方(ionic radius3
)的關係。第6圖之類似圖顯示出二價陽離子之介電極化率與離子半徑立方的關係。第7圖之類似圖顯示三價陽離子之介電極化率與離子半徑立方的關係,以及第8圖之類似圖則顯示四價陽離子之介電極化率與離子半徑立方的關係。
在本發明的一態樣中,該介電基底材料包含鋯和鈦,例如,鈦酸鋯(zirconium titanate,ZT)或鋯鈦酸鉛(lead zirconium titanate,PZT)。可使用多種前驅物來形成此種介電膜,例如Zr(OiPr)2
(thd)2
、Ti(OiPr)2
(thd)2
、(C2
H5
)3
PbOCH2
C(CH3
)3
(TEPOL)、四乙基鉛(tetraethyl lead,TEL)、Zr(OtBu)4
、Ti(OiPr)4
、Pb(thd)2
、Zr(thd)4
或適用於該介電膜之金屬成份的任何適當有機金屬前驅物。
可採各種方式使用基底材料和第二材料來形成本發明的介電電容器膜層。例如,第9圖顯示各種膜層結構的概要圖。第9圖顯示的膜1是由三層個別膜層A/B/A所組成的一種多層式結構,其中層A是基底材料,層B是第二材料。藉著在足以造成該第二材料B的相互擴散作用使其擴散至基底材料層A內的條件下退火該膜1,而產生第9圖中的膜2。第9圖中的膜3是由四層個別膜層A/B/A/B所組成的一多層式結構,其中層A是基底材料,層B是第二材料。第9圖中的膜4則是由基底材料A和第二材料B所組成的共沉積合金(co-deposited alloy)。第9圖中所示的膜1~4可形成有任何相容的電極元件,例如包括含有氮化鈦(TiN)或其他適當材料的底部電極。
在另一態樣中,可形成本發明的電容器結構,使其包含一基底材料A以及一第二材料B,該基底材料A選自ZrO2
與TiO2
之中,第二材料B選自於Al2
O3
、La2
O3
、SrO、Y2
O3
、MgO、CeO2
、Pr2
O3
、Nd2
O3
與Dy2
O3
之群組中,其中當Al2
O3
存在時是做為摻質或用以合金化之第二材料,而非用來進行共沉積或層疊用的材料。可在第9圖所示之膜1~4的膜層類型中採用這種基底材料與第二材料的組合。
在此類膜1~4中,膜的厚度與數目以及膜的組成可依場合做適當改變。在膜1中,可獨立地建立該些A膜層的厚度,例如厚度可為2、4、6或8nm,以及該些B膜層的厚度可為0.2、0.4、0.6或0.8nm。在膜2進行退火之前,膜2可能與膜1具有相同的初始厚度。膜3可製造成具有多層厚度為2nm的A膜層和多層厚度為0.1nm的B膜層。膜4可例如具有6、10或16nm的厚度,且其中根據膜層的總體基或厚度,該第二材料的濃度為10~90%(例如,10%的增加量)。
本發明之複合介電材料結構可為一DRAM或其他微電子裝置的其中一部份。
在本發明的一實施例中,該複合介電材料結構包含一氧化鋯-氧化鋁-氧化鋯(ZAZ)的介電層堆疊,並且可使用如前述國際專利申請案WO2008/128141中所述的TCZR前驅物藉由ALD法來形成之,其中該介電層堆疊材料中摻雜有一第二材料。
本領域中熟悉此項技術者根據本文揭示內容可輕易判斷出可使用的適當前驅物或原料試劑、製程條件,並利用氣相沉積(例如ALD或CVD)、濺射或其他適當形成方法來製造本發明之基底材料與第二材料的複合物。
在本發明的進一步態樣中預期到可進行多種前驅物的共沉積以形成該複合介電材料。可使用兩種或兩種以上的前驅物來執行此類共沉積製程,且可藉著從獨立來源(例如,管線或其他試劑供應容器)供應各別前驅物同時進入沉積腔室中,或從相同來源容器供應兩種或多種前驅物而以一種由多種相容前驅化學物構成的混合物方式進入沉積腔室中。該來源可例如以氣態或蒸氣形態來提供該前驅物或前驅物混合物,或者,可採用液態形式來供應該前驅物或前驅物混合物,並且將之汽化而形成單成份或多成份的前驅物蒸氣,以與基板接觸而形成該複合介電材料。
本發明之複合介電材料包含一前期過渡金屬或其金屬氧化物之基底材料以及一摻雜、共沉積、合金化或層疊用之第二材料,其中該第二材料選自於由Nb、Ge、Ta、La、Y、Ce、Pr、Nd、Gd、Dy、Sr、Ba、Ca、Mg、這些金屬之氧化物及氧化鋁的群組中,以做為摻雜或合金化的第二材料,本發明之複合介電材料可利用原子層沉積或其他氣相沉積製程輕易形成,且可用來製造諸如鐵電高介電常數電容器、閘極結構、DRAMs等諸多微電子裝置。
第1圖是一複合介電質電容器的概要圖,該複合介電質電容器包含一複合介電材料位在頂部電極與底部電極之間,該複合介電材料含有一基底材料層1以及一第二材料層2。
第2圖是一複合介電質電容器的概要圖,該複合介電質電容器包含一複合介電材料,該複合介電材料包含一摻雜有第二材料的介電基底材料。
第3圖是一複合介電質電容器的概要圖,該複合介電質電容器包含一複合介電材料,在該複合介電材料中,沉積一基底材料使其與一第二材料相鄰。
第4圖是以週期表形式列出摻雜物種離子的介電極化率圖表。
第5圖是單價陽離子之介電極化率與離子半徑立方的關係圖。
第6圖是二價陽離子之介電極化率與離子半徑立方的關係圖。
第7圖是三價陽離子之介電極化率與離子半徑立方的關係圖。
第8圖是四價陽離子之介電極化率與離子半徑立方的關係圖。
第9圖顯示不同膜結構1~4的概要圖。
Claims (23)
- 一種複合介電材料,包括:(a)一前期過渡金屬或前期過渡金屬氧化物基底材料;(b)一摻雜、共沉積、合金化或層疊用之第二材料,其中該第二材料是選自由下列材料所構成的群組:多種摻雜材料,該等摻雜材料選自於鈮(Nb)、鍺(Ge)、鉭(Ta)、鑭(La)、釔(Y)、鈰(Ce)、鐠(Pr)、釹(Nd)、釓(Gd)、鏑(Dy)、鍶(Sr)、鋇(Ba)、鈣(Ca)、該些金屬之氧化物及氧化鋁的群組中;多種共沉積材料,該等共沉積材料選自於鍺(Ge)、鐠(Pr)、釹(Nd)、釓(Gd)、鏑(Dy)、鈣(Ca)、及該些金屬之氧化物的群組中;多種合金化材料,該等合金化材料選自於鍺(Ge)、鐠(Pr)、釹(Nd)、釓(Gd)、鏑(Dy)、鈣(Ca)、及該些金屬之氧化物的群組中,且當該基底材料包含釩(V)、鉻(Cr)、鉬(Mo)、鎝(Tc)與錸(Re)之一者或多者時,那麼該等合金化材料額外地選自於鈮(Nb)、鉭(Ta)、鑭(La)、鍶(Sr)、鋇(Ba)、該些金屬之氧化物及氧化鋁的群組中;以及多種層疊用材料,該等層疊用材料選自於鍺(Ge)、鐠(Pr)、釹(Nd)、釓(Gd)、鏑(Dy)、鈣(Ca)、及該些金屬之氧化物的群組中,且當該基底材料包含釩(V)、鉻(Cr)、鉬(Mo)、鎝(Tc)與錸(Re)之一者或多者時,那麼該等層疊用材料額外地選自於鈮(Nb)、鉭(Ta)、鑭(La)、鍶(Sr)、 鋇(Ba)、及該些金屬之氧化物的群組中。
- 如申請專利範圍第1項所述之複合介電材料,其中該前期過渡金屬選自於下列群組中:鈦(Ti)、鋯(Zr)、鉿(Hf)、釩(V)、鈮(Nb)、鉭(Ta)、鉻(Cr)、鉬(Mo)、鎢(W)、鎝(Tc)與錸(Re)。
- 如申請專利範圍第1項所述之複合介電材料,其中該基底材料摻雜有該第二材料。
- 如申請專利範圍第1項所述之複合介電材料,其中該基底材料與該第二材料共沉積。
- 如申請專利範圍第1項所述之複合介電材料,其中該基底材料與該第二材料形成合金。
- 如申請專利範圍第1項所述之複合介電材料,其中該基底材料與該第二材料形成層疊。
- 如申請專利範圍第1項所述之複合介電材料,其中該第二材料相對於一不含該第二材料的對應介電材料而言,呈現出一定程度的下列作用:a)控制漏電,b)增進該基底材料的相穩定度,及/或c)提高介電常數。
- 如申請專利範圍第1項所述之複合介電材料,其中該介電基底材料包含鈦酸鋯(zirconium titanate)。
- 一種複合介電材料,包括:(a)一前期過渡金屬或前期過渡金屬氧化物基底材料;(b)一摻雜、共沉積、合金化或層疊用之第二材料,該第二材料是選自於鈮(Nb)、鍺(Ge)、鉭(Ta)、鑭(La)、釔(Y)、鈰(Ce)、鐠(Pr)、釹(Nd)、釓(Gd)、鏑(Dy)、鍶(Sr)、鋇(Ba)、鈣(Ca)、鎂(Mg)、該些金屬之氧化物及氧化鋁的群組中,以做為摻雜或合金化之第二材料,該複合介電材料包括一中間層,該中間層包含與該基底材料及該第二材料不相同的一材料。
- 一種電容器結構,其包含如申請專利範圍第1項所述之一複合介電材料。
- 如申請專利範圍第10項所述之電容器結構,其中該複合介電材料包括氧化鋯-氧化鋁-氧化鋯(ZAZ)介電堆疊。
- 如申請專利範圍第10項所述之電容器結構,其中該複合介電材料包含一基底材料,該基底材料選自二氧化鋯(ZrO2 )與二氧化鈦(TiO2 )之群組中。
- 一種電容器結構,其包括一複合介電材料,該複合 介電材料包含一前期過渡金屬或其金屬氧化物之基底材料,以及一摻雜、共沉積、合金化或層疊用之第二材料,該第二材料選自於三氧化二鋁(Al2 O3 )、三氧化二鑭(La2 O3 )、氧化鍶(SrO)、三氧化二釔(Y2 O3 )、二氧化鈰(CeO2 )、三氧化二鐠(Pr2 O3 )、三氧化二釹(Nd2 O3 )與三氧化二鏑(Dy2 O3 )之群組中,其中當三氧化二鋁存在時是做為摻雜或合金化之第二材料。
- 一種製造一介電材料結構的方法,其包括沉積一前期過渡金屬或其金屬氧化物之基底材料在一基板上,以及以一第二材料對該基底材料進行摻雜、共沉積、合金化或層疊化,該第二材料選自於下列材料所構成的群組:多種摻雜材料,該等摻雜材料選自於鈮(Nb)、鍺(Ge)、鉭(Ta)、鑭(La)、釔(Y)、鈰(Ce)、鐠(Pr)、釹(Nd)、釓(Gd)、鏑(Dy)、鍶(Sr)、鋇(Ba)、鈣(Ca)、該些金屬之氧化物及氧化鋁的群組中;多種共沉積材料,該等共沉積材料選自於鍺(Ge)、鐠(Pr)、釹(Nd)、釓(Gd)、鏑(Dy)、鈣(Ca)、及該些金屬之氧化物的群組中;多種合金化材料,該等合金化材料選自於鍺(Ge)、鐠(Pr)、釹(Nd)、釓(Gd)、鏑(Dy)、鈣(Ca)、及該些金屬之氧化物的群組中,且當該基底材料包含釩(V)、鉻(Cr)、鉬(Mo)、鎝(Tc)與錸(Re)之一者或多者時,那麼該等合金化材料額外地選自於鈮(Nb)、鉭(Ta)、鑭(La)、鍶(Sr)、 鋇(Ba)、該些金屬之氧化物及氧化鋁的群組中;以及多種層疊用材料,該等層疊用材料選自於鍺(Ge)、鐠(Pr)、釹(Nd)、釓(Gd)、鏑(Dy)、鈣(Ca)、及該些金屬之氧化物的群組中,且當該基底材料包含釩(V)、鉻(Cr)、鉬(Mo)、鎝(Tc)與錸(Re)之一者或多者時,那麼該等層疊用材料額外地選自於鈮(Nb)、鉭(Ta)、鑭(La)、鍶(Sr)、鋇(Ba)、及該些金屬之氧化物的群組中。
- 如申請專利範圍第14項所述之方法,其包含該基底材料和該第二材料其中至少一者的原子層沉積。
- 一種製造一介電材料結構的方法,其包括沉積一前期過渡金屬或其金屬氧化物之基底材料在一基板上,以及以一第二材料對該基底材料進行摻雜、共沉積、合金化或層疊化,該第二材料選自於三氧化二鋁(Al2 O3 )、三氧化二鑭(La2 O3 )、氧化鍶(SrO)、三氧化二釔(Y2 O3 )、二氧化鈰(CeO2 )、三氧化二鐠(Pr2 O3 )、三氧化二釹(Nd2 O3 )與三氧化二鏑(Dy2 O3 )之群組中,其中,當三氧化二鋁存在時是做為摻雜或合金化之第二材料。
- 如申請專利範圍第14項所述之方法,其中該前期過渡金屬或前期過渡金屬氧化物基底材料是使用一前驅物沉積而成,該前驅物選自由具有下式化合物所構成的群組中: M(NR2 )4 ,其中每個R可彼此相同或不同,且各自獨立選自於氫、C1 -C12 烷基、C3 -C10 環烷基、C2 -C8 烯基(例如,乙烯基、烯丙基,等等)、C1 -C12 烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基與三烷基矽烷基)、C6 -C10 芳基、-(CH2 )x NR’R”、-(CH2 )x OR”’以及-NR’R”之群組中,其中x=1、2或3,以及R’、R”和R”’可彼此相同或不同且各自獨立地選自於氫(H)和C1 -C12 烷基之群組中;(R1 NC(R3 R4 )m NR2 )(OX-n)/2 MXn ,其中R1 、R2 、R3 、R4 與X可彼此相同或不同且各自獨立地選自於氫、C1 -C12 烷基、C3 -C10 環烷基、經取代或未經取代的環戊二烯基、C2 -C6 烯基(例如,乙烯基、烯丙基,等等)、C1 -C12 烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基與三烷基矽烷基)、C6 -C10 芳基、-(CH2 )x NR’R”、-(CH2 )x OR'''與-NR’R”之群組中,其中x=1、2或3;以及R’、R”與R'''可彼此相同或不同,且各自獨立地選自於氫(H)和C1 -C12 烷基之群組中,其中標示碳數的該些下標符號1至12表示該烷基取代基中的碳原子數目;m是數值介於1至6的一整數,以及X選自C1 -C12 烷氧基、羧酸根、β-二酮根(beta-diketonates)、β-二酮亞胺根(β-diketiminates)與β-二酮亞胺根(β-diketoiminates)、胍基、脒基及異脲基之群組中;以及其中C(R3 R4 )m 為伸烷基;OX為該金屬M的氧化態;n為數值介於0至OX間的一整數;m為數值介於1至6的一整數;M(E)2 (OR3 )2 ,E是經取代的二酮根(substituted dionato),每個R3 可彼此相同或不同,且各自獨立地選自於C1 -C12 烷基、C3 -C10 環烷基、C2 -C8 烯基(例如,乙烯基、烯丙基,等等)、C1 -C12 烷基矽烷基(包括,單烷基矽烷基、二烷基矽烷基以及三烷基矽烷基)、C6 -C10 芳基、-(CH2 )x NR’R”、-(CH2 )x OR”’及-NR’R”之群組中,其中x=1、2或3,以及R’、R”和R”’可彼此相同或不同,且各自獨立地選自於氫(H)和C1 -C12 烷基之群組中,並且較佳選自於i -丙基和t -丁基之群組中,其中i -丙基為異丙基以及t -丁基為第三丁基;M(OR3 )4 ,其中每個R3 可彼此相同或不同,且各自獨立地選自於C1 -C12 烷基、C3 -C10 環烷基、C2 -C8 烯基(例如,乙烯基、烯丙基,等等)、C1 -C12 烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基以及三烷基矽烷基)、C6 -C10 芳基、-(CH2 )x NR’R”、-(CH2 )x OR”’及-NR’R”,其中x=1、2或3;以及R’、R”及R”’可彼此相同或不同,且各自獨立地選自於氫(H)及C1 -C12 烷基之群組中,且較佳選自於i -丙基和t -丁基之群組中;M(OPr-i )4 -IPA,其中IPA為異丙醇,以及OPr-i 是異丙氧基;(R6 R7 N)2 M(R8 NC(R3 R4 )m NR9 ),其中R3 、R4 、R6 與R7 、R8 與R9 可彼此相同或不同,且各自獨立地選自於氫、C1 -C12 烷基、C3 -C10 環烷基、C2 -C8 烯基(例如,乙烯基、烯丙基,等等)、C1 -C12 烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基及三烷基矽烷基)、C6 -C10 芳基、 -(CH2 )x NR’R”、-(CH2 )x OR”’及-NR’R”之群組中,其中x=1、2或3;以及R’、R”及R”’可彼此相同或不同,且各自獨立地選自於氫(H)和C1 -C12 烷基之群組中;以及m是數值介於1至6的一整數;選自於(脒基)OX-n MXn 、(胍基)OX-n MXn 及(異脲基)OX-n MXn 之群組中的化合物,其中每個X可彼此相同或不同,且各自獨立地選自於氫、C1 -C12 烷基、C3 -C10 環烷基、經取代或未經取代的環戊二烯基、C2 -C6 烯基(例如,乙烯基、烯丙基,等等)、C1 -C12 烷基矽烷基(包括,單烷基矽烷基、二烷基矽烷基及三烷基矽烷基)、C6 -C10 芳基、-(CH2 )x NR’R”、-(CH2 )x OR'''及-NR’R”之群組中,其中x=1、2或3;以及R’、R”與R”’可彼此相同或不同,且各自獨立地選自於氫(H)和C1 -C12 烷基之群組中,其中標示碳數序列的該些下標符號1至12表示該烷基取代基中的碳原子數目;m是數值介於1至6的一整數,以及X選自C1 -C12 烷氧基、羧酸根、β-二酮根、β-二酮亞胺根(beta-diketiminates)、β-二酮亞胺根(beta-diketoiminates)、胍基、脒基及異脲基之群組中;OX是金屬M的氧化態;n是數值介於0至OX的一整數;m是數值介於1至6的一整數;以及具有式RN=M’(NR’R”)3 之化合物,其中R是異丙基、t-丁基或t-戊基;並且其中R’與R”可彼此相同或不同且,且各自獨立地選自於C1 -C4 烷基之群組中;其中M是一前期過渡金屬物種,以及M’是鉭或鈮。
- 如申請專利範圍第15項所述之方法,其中該前期過渡金屬或其金屬氧化物之基底材料是使用一前驅物沉積而成,該前驅物選自由下式化合物所構成的群組中:M(NR2 )4 ,其中每個R可彼此相同或不同,且各自獨立選自於氫、C1 -C12 烷基、C3 -C10 環烷基、C2 -C8 烯基(例如,乙烯基、烯丙基,等等)、C1 -C12 烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基與三烷基矽烷基)、C6 -C10 芳基、-(CH2 )x NR’R”、-(CH2 )x OR”’及-NR’R”之群組中,其中x=1、2或3;以及R’、R”和R”’可彼此相同或不同,且各自獨立地選自於氫(H)和C1 -C12 烷基之群組中;(R1 NC(R3 R4 )m NR2 )(OX-n)/2 MXn ,其中R1 、R2 、R3 、R4 與X可彼此相同或不同,且各自獨立地選自於氫、C1 -C12 烷基、C3 -C10 環烷基、C2 -C6 烯基(例如,乙烯基、烯丙基,等等)、C1 -C12 烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基與三烷基矽烷基)、C6 -C10 芳基、-(CH2 )x NR’R”、-(CH2 )x OR'''與-NR’R”之群組中,其中x=1、2或3;以及R’、R”與R'''可彼此相同或不同,且各自獨立地選自於氫(H)和C1 -C12 烷基之群組中,其中標示碳數序列的該些下標符號1至12表示該烷基取代基中的碳原子數目;m是數值介於1至6的一整數,以及X選自C1 -C12 烷氧基、羧酸根、β-二酮根、β-二酮亞胺根(β-diketiminates)與β-二酮亞胺根(β-diketoiminates)、胍基、脒基及異脲基之群組中;以及其中C(R3 R4 )m 為伸烷基;OX為該金屬 M的氧化態;n為數值介於0至OX間的一整數;m為數值介於1至6的一整數;M(E)2 (OR3 )2 ,E是經取代的二酮根(substituted dionato),每個R3 可彼此相同或不同,且各自獨立地選自於C1 -C12 烷基、C3 -C10 環烷基、C2 -C8 烯基(例如,乙烯基、烯丙基,等等)、C1 -C12 烷基矽烷基(包括,單烷基矽烷基、二烷基矽烷基及三烷基矽烷基)、C6 -C10 芳基、-(CH2 )x NR’R”、-(CH2 )x OR”’及-NR’R”之群組中,其中x=1、2或3;以及R’、R”和R”’可彼此相同或不同,且各自獨立地選自於氫(H)和C1 -C12 烷基之群組中,並且較佳選自於i -丙基和t -丁基之群組中,其中i -丙基為異丙基,以及t -丁基為第三丁基;M(OR3 )4 ,其中每個R3 為彼此相同或不同,且各自獨立地選自於C1 -C12 烷基、C3 -C10 環烷基、C2 -C8 烯基(例如,乙烯基、烯丙基,等等)、C1 -C12 烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基以及三烷基矽烷基)、C6 -C10 芳基、-(CH2 )x NR’R”、-(CH2 )x OR”’及-NR’R”,其中x=1、2或3;以及R’、R”及R”’可彼此相同或不同,且各自獨立地選自於氫(H)及C1 -C12 烷基之群組中,且較佳選自於i -丙基和t -丁基之群組中;M(OPr-i )4 -IPA,其中IPA為異丙醇,以及OPr-i 是異丙氧基;(R6 R7 N)2 M(R8 NC(R3 R4 )m NR9 ),其中R3 、R4 、R6 與R7 、R8 與R9 可彼此相同或不同,且各自獨立地選自於氫、 C1 -C12 烷基、C3 -C10 環烷基、C2 -C8 烯基(例如,乙烯基、烯丙基,等等)、C1 -C12 烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基及三烷基矽烷基)、C6 -C10 芳基、-(CH2 )x NR’R”、-(CH2 )x OR”’及-NR’R”之群組中,其中x=1、2或3;以及R’、R”及R”’可彼此相同或不同,且各自獨立地選自於氫(H)和C1 -C12 烷基之群組中;以及m是數值介於1至6的一整數;選自於(脒基)OX-n MXn 、(胍基)OX-n MXn 及(異脲基)OX-n MXn 之群組中的化合物,其中每個X可彼此相同或不同,且各自獨立地選自於氫、C1 -C12 烷基、C3 -C10 環烷基、C2 -C6 烯基(例如,乙烯基、烯丙基,等等)、C1 -C12 烷基矽烷基(包括單烷基矽烷基、二烷基矽烷基及三烷基矽烷基)、C6 -C10 芳基、-(CH2 )x NR’R”、-(CH2 )x OR'''及-NR’R”之群組中,其中x=1、2或3;以及R’、R”與R'''可彼此相同或不同,且各自獨立地選自於氫(H)和C1 -C12 烷基之群組中,其中標示碳數序列的該些下標符號1至12表示該烷基取代基中的碳原子數目;m是數值介於1至6的一整數,以及X選自C1 -C12 烷氧基、羧酸根、β-二酮根、β-二酮亞胺根(beta-diketiminates)、β-二酮亞胺根(beta-diketoiminates)、胍基、脒基及異脲基之群組中;OX是金屬M的氧化態;n是數值介於0至OX的一整數;m是數值介於1至6的一整數;以及具有式RN=M’(NR’R”)3 之化合物,其中R是異丙基、t-丁基或t-戊基;並且其中R’與R”可彼此相同或不同 且,且各自獨立地選自於C1 -C4 烷基之群組中;其中M是一前期過渡金屬物種,以及M’是鉭或鈮。
- 如申請專利範圍第14項所述之方法,其中該介電基底材料包括鈦酸鋯。
- 如申請專利範圍第15項所述之方法,其中該介電基底材料包括鈦酸鋯。
- 一種製造微電子裝置的方法,其包括使用一氣相沉積製程形成如申請專利範圍第1項所述之一複合介電材料。
- 如申請專利範圍第21項所述之方法,其中該氧相沉積製程包括原子層沉積。
- 一種複合介電材料,包含一前期過渡金屬或其金屬氧化物之基底材料,以及一摻雜、共沉積、合金化或層疊用之第二材料,該第二材料選自於三氧化二鋁(Al2 O3 )、三氧化二鑭(La2 O3 )、氧化鍶(SrO)、三氧化二釔(Y2 O3 )、二氧化鈰(CeO2 )、三氧化二鐠(Pr2 O3 )、三氧化二釹(Nd2 O3 )與三氧化二鏑(Dy2 O3 )之群組中,其中當三氧化二鋁存在時是做為摻雜或合金化之第二材料。
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KR101289950B1 (ko) * | 2005-06-10 | 2013-07-26 | 가부시키가이샤 아데카 | 니오브 2-에틸헥사노에이트 유도체, 그 유도체의 제조방법, 그 유도체를 함유하는 유기산 금속염 조성물, 및 그조성물을 이용한 박막의 제조 방법 |
KR100724566B1 (ko) * | 2005-07-29 | 2007-06-04 | 삼성전자주식회사 | 다층구조의 게이트 층간 유전막을 갖는 플래시 메모리 소자및 그 제조방법들 |
KR100650698B1 (ko) * | 2005-08-02 | 2006-11-27 | 삼성전자주식회사 | 듀얼 게이트를 갖는 반도체 장치의 제조 방법 |
US20080118731A1 (en) * | 2006-11-16 | 2008-05-22 | Micron Technology, Inc. | Method of forming a structure having a high dielectric constant, a structure having a high dielectric constant, a capacitor including the structure, a method of forming the capacitor |
US7709359B2 (en) * | 2007-09-05 | 2010-05-04 | Qimonda Ag | Integrated circuit with dielectric layer |
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2010
- 2010-04-14 KR KR1020117027182A patent/KR20120030370A/ko not_active Application Discontinuation
- 2010-04-14 WO PCT/US2010/031125 patent/WO2010120954A2/en active Application Filing
- 2010-04-14 US US13/264,745 patent/US20120127629A1/en not_active Abandoned
- 2010-04-16 TW TW099112063A patent/TWI505303B/zh active
Patent Citations (2)
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US20070262715A1 (en) * | 2006-05-11 | 2007-11-15 | Matsushita Electric Industrial Co., Ltd. | Plasma display panel with low voltage material |
TW200912030A (en) * | 2007-09-14 | 2009-03-16 | Sigma Aldrich Co | Methods of preparing thin films by atomic layer deposition using titanium-based precursors |
Also Published As
Publication number | Publication date |
---|---|
WO2010120954A3 (en) | 2011-03-24 |
TW201042681A (en) | 2010-12-01 |
WO2010120954A2 (en) | 2010-10-21 |
US20120127629A1 (en) | 2012-05-24 |
KR20120030370A (ko) | 2012-03-28 |
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