TWI504029B - 應用於覆晶發光二極體之聚矽氧基反射性底部填充物及熱耦合器 - Google Patents

應用於覆晶發光二極體之聚矽氧基反射性底部填充物及熱耦合器 Download PDF

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Publication number
TWI504029B
TWI504029B TW099135109A TW99135109A TWI504029B TW I504029 B TWI504029 B TW I504029B TW 099135109 A TW099135109 A TW 099135109A TW 99135109 A TW99135109 A TW 99135109A TW I504029 B TWI504029 B TW I504029B
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TW
Taiwan
Prior art keywords
led
metal
underfill material
sub
layer
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TW099135109A
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English (en)
Chinese (zh)
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TW201123565A (en
Inventor
雷飛兒Ｉ 亞迪斯
葛羅葛瑞 貝森
保羅Ｓ 馬汀
麥可Ｒ 克萊米斯
Original Assignee
皇家飛利浦電子股份有限公司
飛利浦露明光學公司
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Publication of TW201123565A publication Critical patent/TW201123565A/zh
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Publication of TWI504029B publication Critical patent/TWI504029B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW099135109A 2009-11-06 2010-10-14 應用於覆晶發光二極體之聚矽氧基反射性底部填充物及熱耦合器 TWI504029B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/613,924 US8471280B2 (en) 2009-11-06 2009-11-06 Silicone based reflective underfill and thermal coupler

Publications (2)

Publication Number Publication Date
TW201123565A TW201123565A (en) 2011-07-01
TWI504029B true TWI504029B (zh) 2015-10-11

Family

ID=43398808

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099135109A TWI504029B (zh) 2009-11-06 2010-10-14 應用於覆晶發光二極體之聚矽氧基反射性底部填充物及熱耦合器

Country Status (7)

Country Link
US (1) US8471280B2 (https=)
EP (1) EP2497126B1 (https=)
JP (1) JP2013510422A (https=)
KR (1) KR101833786B1 (https=)
CN (1) CN102971877B (https=)
TW (1) TWI504029B (https=)
WO (1) WO2011055249A2 (https=)

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US9293667B2 (en) 2010-08-19 2016-03-22 Soraa, Inc. System and method for selected pump LEDs with multiple phosphors
US8575642B1 (en) 2009-10-30 2013-11-05 Soraa, Inc. Optical devices having reflection mode wavelength material
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US20110215348A1 (en) * 2010-02-03 2011-09-08 Soraa, Inc. Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials
KR101150861B1 (ko) * 2010-08-16 2012-06-13 한국광기술원 멀티셀 구조를 갖는 발광다이오드 및 그 제조방법
US8896235B1 (en) 2010-11-17 2014-11-25 Soraa, Inc. High temperature LED system using an AC power source
US8541951B1 (en) 2010-11-17 2013-09-24 Soraa, Inc. High temperature LED system using an AC power source
USD720310S1 (en) 2011-06-17 2014-12-30 Soraa, Inc. Triangular semiconductor die
US8952402B2 (en) 2011-08-26 2015-02-10 Micron Technology, Inc. Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods
KR101969334B1 (ko) * 2011-11-16 2019-04-17 엘지이노텍 주식회사 발광 소자 및 이를 구비한 발광 장치
TWI606618B (zh) 2012-01-03 2017-11-21 Ｌｇ伊諾特股份有限公司 發光裝置
CN104205366B (zh) 2012-03-30 2018-08-31 亮锐控股有限公司 密封的半导体发光器件
WO2013182980A1 (en) * 2012-06-07 2013-12-12 Koninklijke Philips N.V. Chip scale light emitting device with metal pillars in a molding compound formed at wafer level
JP6155827B2 (ja) * 2013-05-11 2017-07-05 日亜化学工業株式会社 発光装置の製造方法
JP6155932B2 (ja) * 2013-07-19 2017-07-05 日亜化学工業株式会社 発光装置
JP2015032740A (ja) * 2013-08-05 2015-02-16 豊田合成株式会社 発光装置
JP6303805B2 (ja) * 2014-05-21 2018-04-04 日亜化学工業株式会社 発光装置及びその製造方法
WO2016062359A1 (en) * 2014-10-24 2016-04-28 Hewlett-Packard Indigo B.V. Electrophotographic varnish
JP6447018B2 (ja) * 2014-10-31 2019-01-09 日亜化学工業株式会社 発光装置及び発光装置の製造方法
DE102015108056A1 (de) * 2015-05-21 2016-11-24 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
EP3357097B1 (en) 2015-10-01 2020-12-16 Cree, Inc. Low optical loss flip chip solid state lighting device
WO2018223391A1 (en) * 2017-06-09 2018-12-13 Goertek. Inc Micro-led array transfer method, manufacturing method and display device
CN107437542B (zh) * 2017-07-31 2023-05-05 广东工业大学 一种紫外led芯片及其制备方法
TWI705585B (zh) * 2017-09-25 2020-09-21 致伸科技股份有限公司 光源模組
US11387389B2 (en) 2018-01-29 2022-07-12 Creeled, Inc. Reflective layers for light-emitting diodes
US11923481B2 (en) 2018-01-29 2024-03-05 Creeled, Inc. Reflective layers for light-emitting diodes
US11031527B2 (en) 2018-01-29 2021-06-08 Creeled, Inc. Reflective layers for light-emitting diodes
US10879441B2 (en) 2018-12-17 2020-12-29 Cree, Inc. Interconnects for light emitting diode chips
US10985294B2 (en) 2019-03-19 2021-04-20 Creeled, Inc. Contact structures for light emitting diode chips
US11094848B2 (en) 2019-08-16 2021-08-17 Creeled, Inc. Light-emitting diode chip structures
US11032976B1 (en) 2020-03-16 2021-06-15 Hgci, Inc. Light fixture for indoor grow application and components thereof
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US7285431B2 (en) * 2004-09-30 2007-10-23 Institute Of Semiconductors, Chinese Academy Of Sciences Method for manufacturing a GaN based LED of a black hole structure
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Also Published As

Publication number Publication date
JP2013510422A (ja) 2013-03-21
KR101833786B1 (ko) 2018-03-14
EP2497126A2 (en) 2012-09-12
CN102971877A (zh) 2013-03-13
WO2011055249A2 (en) 2011-05-12
TW201123565A (en) 2011-07-01
CN102971877B (zh) 2016-06-29
US20110108865A1 (en) 2011-05-12
KR20120109497A (ko) 2012-10-08
EP2497126B1 (en) 2018-07-25
WO2011055249A3 (en) 2015-11-26
US8471280B2 (en) 2013-06-25

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