TWI502051B - 螢光材料及使用彼之發光裝置 - Google Patents
螢光材料及使用彼之發光裝置 Download PDFInfo
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- TWI502051B TWI502051B TW099128872A TW99128872A TWI502051B TW I502051 B TWI502051 B TW I502051B TW 099128872 A TW099128872 A TW 099128872A TW 99128872 A TW99128872 A TW 99128872A TW I502051 B TWI502051 B TW I502051B
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- 239000000463 material Substances 0.000 title claims description 102
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 18
- 150000004767 nitrides Chemical class 0.000 claims description 17
- 150000004820 halides Chemical class 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 229910052708 sodium Inorganic materials 0.000 claims description 7
- 229910052712 strontium Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 150000001247 metal acetylides Chemical class 0.000 claims 2
- -1 oxide or carbide Chemical class 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 26
- 239000011347 resin Substances 0.000 description 26
- 229920005989 resin Polymers 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 13
- 230000005284 excitation Effects 0.000 description 9
- 239000007858 starting material Substances 0.000 description 9
- 229910052693 Europium Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052748 manganese Inorganic materials 0.000 description 7
- 229910052684 Cerium Inorganic materials 0.000 description 6
- 229910052692 Dysprosium Inorganic materials 0.000 description 6
- 229910052691 Erbium Inorganic materials 0.000 description 6
- 229910052689 Holmium Inorganic materials 0.000 description 6
- 229910052779 Neodymium Inorganic materials 0.000 description 6
- 229910052777 Praseodymium Inorganic materials 0.000 description 6
- 229910052772 Samarium Inorganic materials 0.000 description 6
- 229910052771 Terbium Inorganic materials 0.000 description 6
- 229910052775 Thulium Inorganic materials 0.000 description 6
- 229910052769 Ytterbium Inorganic materials 0.000 description 6
- 229910052787 antimony Inorganic materials 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- 229910052797 bismuth Inorganic materials 0.000 description 6
- 229910052793 cadmium Inorganic materials 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 229910052745 lead Inorganic materials 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910052761 rare earth metal Inorganic materials 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 229910052716 thallium Inorganic materials 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 3
- 229910003564 SiAlON Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001683 neutron diffraction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7729—Chalcogenides
- C09K11/7731—Chalcogenides with alkaline earth metals
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- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Description
此申請案係以2010年2月19日申請之先前日本專利申請案第2010-34907號為基準且主張其優先權之利益,將該專利完整內容併入本文以供參考。
本發明具體例關於一種在發光裝置中使用之螢光材料。本發明具體例尤其關於在諸如場發射顯示器之顯示器中或在包括藍光或紫外光LED之發光裝置中用作為光源之螢光材料。
利用發光二極體之LED燈被用於儀器的許多顯示元件中,諸如行動裝置、PC周邊設備、OA設備、各種開關、用於背光之光源及顯示板。LED燈被強烈要求不僅具有高效率,且亦在用於一般照明時極佳的演色性或在用於背光時輸送寬的色域。為了增加效率,有必要採用高效率螢光材料。再者,為了改進演色性及變寬色域,有效的是採用在以藍光激發下發射綠光之螢光材料。
另一方面,高負載LED通常在其中所使用之螢光材料加熱至約100至200℃之溫度運轉時變得太熱。當螢光材料因此加熱時,通常使彼之發射強度降低。據此,希望發射強度降低少些,即使螢光材料加熱時。
鑑於上述,可將以Eu活化之β-SiAlON磷視為在以藍光激發下發射綠光且因此適合用於前述LED燈之螢光材料的實例。在450奈米激發時,該磷有效地發光且其在450奈米激發下的吸收比、內部量子效率及外部量子效率分別為約65%、53%及35%。
有提出一些進一步改進內部量子效率及外部量子效率之SiAlON磷。然而,甚至那些磷仍被要求進一步改進色純度。
具體例中之一例係在於一種製造以下式(1)代表之氧氮化物螢光材料之方法:
(M1-x
Rx
)3-y
Si13-z
Al3+z
O2+u
N21-w
(1)
其中M係選自IA族元素、IIA族元素、除了Al以外的IIIA族元素、IIIB族元素、稀土元素及除了Si以外的IVA族元素之元素;R係選自由下列各物所組成群組之元素:Eu、Ce、Mn、Tb、Yb、Dy、Sm、Tm、Pr、Nd、Pm、Ho、Er、Cr、Sn、Cu、Zn、As、Ag、Cd、Sb、Au、Hg、Tl、Pb、Bi及Fe;且x、y、z、u及w為分別滿足0<x≦1,-0.1≦y≦0.15,-1≦z≦1,及-1<u-w≦1.5之數值;該方法包含以下步驟:將該元素M之氮化物或碳化物,該元素M之鹵化物,該元素R之氧化物、氮化物或碳化物,Si之氮化物、氧化物或碳化物,與Al之氮化物、氧化物或碳化物混合,以製備材料混合物;將材料混合物點火;且接著將點火之產物酸清洗。
具體例中之另一例係在於一種製造以下式(2)代表之氧氮化物螢光材料之方法:
(M’1-x-x0
M0 x0
Rx
)3-y
Si13-z
Al3+z
O2+u
N21-w
(2)
其中M’係選自除了Na以外的IA族元素、除了Ca以外的IIA族元素、除了Al以外的IIIA族元素、IIIB族元素、稀土元素及除了Si以外的IVA族元素之元素;M0
係選自由下列各物所組成群組之元素:Ca及Na;R係選自由下列各物所組成群組之元素:Eu、Ce、Mn、Tb、Yb、Dy、Sm、Tm、Pr、Nd、Pm、Ho、Er、Cr、Sn、Cu、Zn、As、Ag、Cd、Sb、Au、Hg、Tl、Pb、Bi及Fe;且x、x0、y、z、u及w為分別滿足0<x≦1,0<x0≦0.08,-0.1≦y≦0.15,-1≦z≦1,及-1<u-w≦1.5之數值;該方法包含以下步驟:將該元素M’之氮化物或碳化物,該元素M0
之鹵化物,該元素R之氧化物,氮化物或碳化物,Si之氮化物、氧化物或碳化物,與Al之氮化物、氧化物或碳化物混合,以製備材料混合物;將材料混合物點火;且接著將點火之產物酸清洗。
具體例中之又另一例係在於一種氧氮化物螢光材料,其係以下式(2)代表:
(M’1-x-x0
M0 x0
Rx
)3-y
Si13-z
Al3+z
O2+u
N21-w
(2)
其中M’係選自除了Na以外的IA族元素、除了Ca以外的IIA族元素、除了Al以外的IIIA族元素、IIIB族元素、稀土元素及除了Si以外的IVA族元素之元素;M0
係選自由下列各物所組成群組之元素:Ca及Na;R係選自由下列各物所組成群組之元素:Eu、Ce、Mn、Tb、Yb、Dy、Sm、Tm、Pr、Nd、Pm、Ho、Er、Cr、Sn、Cu、Zn、As、Ag、Cd、Sb、Au、Hg、Tl、Pb、Bi及Fe;且x、x0、y、z、u及w為分別滿足0<x≦1,0<x0≦0.08,-0.1≦y≦0.15,-1≦z≦1,及-1<u-w≦1.5之數值;且在以250至500奈米之波長範圍內的光激發時,發射具有波峰在490至580奈米之波長範圍內的發光。
再者,根據具體例的發光裝置包含:發光元件,其發散在250至500奈米之波長範圍內的光,及磷層,其係提供在該發光元件上且含有上述之氧氮化物螢光材料。
具體例提供具有極佳的量子效率且因此得到高發射強度之螢光材料。此外,螢光材料亦具有極佳的色度及高實用性。從螢光材料發射之發射光譜具有窄的半頻帶寬度。再者,以x-y座標系統表示之色度圖中的座標點向x-軸的負方向移動,於是改進色度且使可再現色域變寬。
現以參考所附圖形解釋具體例。
根據具體例之氧氮化物螢光材料係以Sr3
Al3
Si13
O2
N21
晶體結構為基準,且磷係藉由以其他元素取代其構成元素及/或藉由熔融發光中心金屬元素以形成固體溶液而修改。螢光材料通常係藉由點火含有構成元素之化合物的混合物而製造。用於製造根據具體例的螢光材料之方法係以採用鹵化物作為含有對應於Sr3
Al3
Si13
O2
N21
晶體中的Sr之元素的材料化合物中之一為特徵。
具體例的氧氮化合物螢光材料可以下式(1)代表:
(M1-x
Rx
)3-y
Si13-z
Al3+z
O2+u
N21-w
(1)
其中M係選自IA族元素、IIA族元素、除了Al以外的IIIA族元素、IIIB族元素、稀土元素及除了Si以外的IVA族元素之元素;R係選自由下列各物所組成群組之元素:Eu、Ce、Mn、Tb、Yb、Dy、Sm、Tm、Pr、Nd、Pm、Ho、Er、Cr、Sn、Cu、Zn、As、Ag、Cd、Sb、Au、Hg、Tl、Pb、Bi及Fe;且x、y、z、u及w為分別滿足0<x≦1,-0.1≦y≦0.15,-1≦z≦1,及-1<u-w≦1.5之數值。
金屬元素M較佳地選自IA族元素(鹼金屬),諸如Li、Na和K;IIA族元素(鹼土金屬),諸如Mg、Ca、Sr和Ba;IIIA族元素,諸如B、Ga和In;IIIB族元素,諸如Y和Sc;稀土元素,諸如Gd、La和Lu;及IVA族元素,諸如Ge。金屬元素M可為單一元素或二或更多種元素之組合。
元素R係選自由下列各物所組成群組之元素:Eu、Ce、Mn、Tb、Yb、Dy、Sm、Tm、Pr、Nd、Pm、Ho、Er、Cr、Sn、Cu、Zn、As、Ag、Cd、Sb、Au、Hg、Tl、Pb、Bi及Fe。元素R可為單一元素或二或更多種元素之組合。
根據具體例的螢光材料具有基本上含有元素M、Si、Al及O及/或N之晶體結構,且有必要使金屬元素M以發光中心元素R部分取代。
發光中心元素R可鑑於發射波長、發射強度等等而自由選自上述元素。然而,因為在發射波長可變性等等的優勢,較佳地可使用Eu及Mn中之一或二者。
發光中心元素R較佳地取代0.1莫耳%或更多量的元素M,其對應於基本的Sr3
Al3
Si13
O2
N21
晶體中的Sr。若取代之M量少於0.1莫耳%,則難以獲得足夠的發射強度。金屬元素M可以發光中心元素R完全取代。然而,若取代之M量少於50莫耳%,可極力避免發射機率的降低(濃度淬減)。發光中心元素能使具體例的螢光材料在以250至500奈米之光激發下發射藍綠至黃綠範圍內的光,亦即發散具有波峰在490至580奈米之波長範圍內的發光。
在以式(1)代表之氧氮化物螢光材料中,元素M可為二或多種元素之組合。尤其因為改進發光色度,所以較佳的是將Sr3
Al3
Si13
O2
N21
中的Sr以少量Ca或Na部分取代。根據此具體例的氧氮化物螢光材料可以下式(2)代表:
(M’1-x-x0
M0 x0
Rx
)3-y
Si13-z
Al3+z
O2+u
N21-w
(2)
其中M’係選自除了Na以外的IA族元素、除了Ca以外的IIA族元素、除了Al以外的IIIA族元素、IIIB族元素、稀土元素及除了Si以外的IVA族元素之元素;M0
係選自由下列各物所組成群組之元素:Ca及Na;R係選自由下列各物所組成群組之元素:Eu、Ce、Mn、Tb、Yb、Dy、Sm、Tm、Pr、Nd、Pm、Ho、Er、Cr、Sn、Cu、Zn、As、Ag、Cd、Sb、Au、Hg、Tl、Pb、Bi及Fe;且x、x0、y、z、u及w為分別滿足0<x≦1,0<x0≦0.08,-0.1≦y≦0.15,-1≦z≦1,及-1<u-w≦1.5之數值。
在式(2)中的元素M’與M0
之組合對應於式(1)中的元素M。
可將根據具體例的螢光材料認為是以Sr3
Al3
Si13
O2
N21
為基準之氧氮化物,且將其構成元素Sr、Si、Al、O及N以其他元素及/或其他金屬元素取代,諸如Eu。該等修改(諸如取代)改變晶格常數且藉此常略微改變晶體結構。然而,取決於諸如晶體結構、由其中的原子佔據之位置及彼之原子配位的條件而定,其中的原子位置很少有使得架構原子之間的化學鍵破裂的巨大改變。此意謂具體例的螢光材料可給予具體例的效果而不改變根本的晶體結構。在具體例中,從晶格常數所計算之Sr-N和Sr-O的化學鍵長度(接近的原子間距離)及由X-射線繞射或中子繞射所測定之原子配位尤其較佳地分別在以Sr3
Al3
Si13
O2
N21
之Sr-N和Sr-O為基準計±15%之範圍內(顯示於表1中)。若化學鍵長度改變超過上述範圍,則彼等破裂以形成另一晶體結構且由此可能難以徹底獲得具體例的效果。
Sr3
Al3
Si13
O2
N21
之晶體結構屬於斜方晶系統,且包含沿著c-軸隨意堆疊之四種框架結構。該四種框架結構個別例證於圖1至4中。晶體的平均晶格常數為a=9.037(6),b=14.734(9)及c=29.856(20),且彼等對應於沿著c-軸堆疊之四種框架結構的尺寸。圖5顯示晶體的XRD輪廓。
根據具體例的螢光材料之晶體結構可以X-射線繞射或中子繞射鑑證。具體例不僅包括展現與Sr3
Al3
Si13
O2
N21
相同的XRD輪廓之螢光材料,亦包括其中Sr3
Al3
Si13
O2
N21
之構成元素以其他元素取代以改變在特別範圍內的晶格常數之化合物。例如,具體例的螢光材料包括具有Sr3
Al3
Si13
O2
N21
晶體結構之化合物,其中Sr以發光中心元素R取代,且若有要求時以元素M0
取代。再者,Al及Si可彼此部分取代,及/或O及N可彼此部分取代。該化合物的實例包括Sr3
Al2
Si14
ON22
、Sr3
AlSi15
N23
、Sr3
Al4
Si12
O3
N20
、Sr3
Al5
Si11
O4
N19
及Sr3
Al6
Si10
O5
N18
。該等化合物具有屬於與Sr3
Al3
Si13
O2
N21
相同的群組之晶體結構。
在其中具有小的取代比值之例子中,可藉由下列簡單方法判斷取代之晶體是否屬於與Sr3
Al3
Si13
O2
N21
相同的群組。測量修改之晶體的XRD輪廓且以繞射波峰位置與Sr3
Al3
Si13
O2
N21
之XRD輪廓中的該等位置比較。結果,若主波峰的位置相同,則彼之晶體結構可視為相同。較佳的是選擇約10個具有強繞射強度的波峰作為比較的主波峰。
具體例的氧氮化物螢光材料可藉由將起始材料之混合物點火及接著將點火之產物酸清洗之步驟而合成。起始材料的實例包括:元素M之氮化物或其碳化物,諸如氰胺;Al和Si之氮化物、氧化物或碳化物;及發光中心元素R之氧化物、氮化物或碳化物。在用於製造氧氮化物螢光材料之具體例的方法中,必不可少地採用元素M或M0
之鹵化物作為起始材料中之一。在將含有鹵化物之材料混合物點火的步驟中,假設鹵化物被液化,以促進在材料中的固相反應且藉此加速結晶。在點火步驟之後,過量鹵化物及外來物質係以酸清洗而移除,以獲得高純度螢光材料。假設因此改進螢光材料的性質。
鹵化物的實例包括SrF2
、CaCl2
及NaF。
在意欲併入Sr作為元素M及Eu作為螢光中心元素R之例子中,尤其有可能採用Sr3
N2
、SrF2
、Si3
N4
、AlN、Al2
O3
及EuN作為起始材料。亦有可能使用Ca3
N2
、Ba3
N2
、Sr2
N、SrN或其混合物代替Sr3
N2
。在意欲以Ca取代Sr之例子中,有可能採用Sr3
N2
、CaCl2
、Si3
N4
、AlN、Al2
O3
及EuN作為起始材料。對材料的組合沒有特別的限制且可使用任何材料之組合。將該等材料秤重且混合,以至於可獲得目標組成物。將材料在例如手套箱中的硏缽中混合。
接著可將起始材料之混合物在例如坩鍋中點火預定的時間,以製備具有目標組成物之氧氮化物。坩鍋係由例如氮化硼、氮化矽、碳化矽、碳、氮化鋁、SiAlON、氧化鋁、鉬或鎢所製成。點火較佳地在超過大氣壓力之壓力下進行。為了避免作為起始材料中之一的氮化矽在高溫下分解,壓力較佳地不少於5大氣壓。點火溫度較佳地在1500至2000℃之範圍內,更佳在1800至2000℃之範圍內。若溫度低於1500℃,則常難以獲得目標氧氮化物。另一方面,若溫度超過2000℃,則恐怕材料或產物可昇華。再者,因為材料AlN容易氧化,所以點火較佳地在N2
氣體下進行。在該情況中,亦可使用N2
/H2
之混合氣體。
若必要時,接著呈粉末形式的點火之產物接受後處理,諸如清洗,以獲得具體例的螢光材料。若進行清洗處理,以酸清洗特別佳,但是可進行其他類型的清洗,諸如以純水清洗。在酸清洗之後,若必要時,可在氮或氫氣下執行後退火處理。
具體例的螢光材料可用於白光LED以及綠光LED中。為了獲得發白光,將上述螢光材料與複數種在其他波長範圍內發光之螢光材料組合使用。例如,可組合使用二或多種在以UV光激發下發紅光、黃光(或綠光)及藍光之螢光材料。再者,在以藍光激發時,可將具體例的螢光材料與發黃光之螢光材料組合,且若必要時,亦可與發紅光之螢光材料組合。當以藍光激發時,因此組合之螢光材料可給予發白光,其為發光與激發藍光的混合光。
根據具體例的螢光材料可用於任何習知的發光裝置中。圖6為圖式例證具體例的封裝杯型發光裝置的橫截面圖。
在圖6中所示之發光裝置中,樹脂桿600包含模製成導線架一部分的導線601和602及由與導線架一起統一模製所形成之樹脂組件603。以樹脂組件603得到凹部605,其中頂端開口大於底部。在凹部的內壁上提供反射表面604。
將發散250至500奈米之光的發光晶片606以Ag糊或類似物安裝在凹部605的近似環狀底部的中心。發光晶片606的實例為發光二極體及雷射二極體。發光晶片可發射UV光。對發光晶片沒有特別的限制。據此,亦有可能採用能夠發藍光、藍紫光或近UV光以及UV光之晶片。例如,可使用半導體發光元件(諸如GaN)作為發光晶片。將發光晶片606的電極(未顯示)以Au或類似物所製成之焊線607和608的方式分別連接至導線601和602。可適當地修改導線601和602的位置。
將磷層609提供在樹脂組件603的凹部605中。可將具體例的螢光材料610以5至50重量%之量分散或沉澱在由矽氧烷樹脂或類似物所製成之樹脂層611中,以形成磷層609。具體例的螢光材料包含具有高共價性之氧氮化物基質,且因此通常為疏水性,使得與樹脂具有好的相容性。據此,足以避免在樹脂與螢光材料之間的界面上散射,以改進光汲取效率。
發光晶片606可具有其中n-型及p-型電極配置在相同平面上的倒裝晶片類型。此晶片可避免關於電線的問題,諸如電線的切斷或錯置及由電線的光吸收。在該例子中,因此可獲得極佳的可信度及發光強度二者的半導體發光裝置。再者,亦有可能在發光晶片606中使用n-型基板,以製造如下述所構成之發光裝置。在該裝置中,n-型電極係形成於n-型基板之背表面上,而p-型電極係形成於基板上的半導體層之頂表面上。將n-型及p-型電極中之一安裝在導線中之一上,且將另一電極以電線方式連接至另一導線。可適當地改變發光晶片606的大小及凹部605的尺寸和形狀。
圖7A及7B例證具體例的殼型發光裝置之橫截面圖式。
在圖7A中所示之發光裝置中,將在例如445奈米下得到發射波峰之發光晶片701焊接在由AlN及類似物所製成之封裝700上,且以導電線703的方式連接至電極。再者,將發光晶片701以由聚矽氧樹脂或類似物所製成之透明樹脂層704成為圓頂,且依次於其上堆疊含有發紅光之螢光材料的透明樹脂層705、透明樹脂層706及含有具體例的發綠光之螢光材料的透明樹脂層707。圖7A之裝置因此包含發光晶片及發紅光和發綠光之螢光材料,在以晶片發射之激發光激發時,每一該螢光材料發散發光。該裝置可進一步裝備有發藍光之螢光材料層。圖7B顯示此裝置之橫截面圖式,其進一步包含透明樹脂層708及含有發藍光之螢光材料的層709。該等層係形成於圖7A中所示之裝置的綠螢光材料層707上。在圖7B之裝置中所使用之發光二極體通常經設計以輻射含有比圖7A之裝置中少的藍光組份量之光。這是因為激發光及從每一螢光材料發射之發光係經設計使得發光裝置可發散整體所欲色彩之光,諸如白光。
根據具體例的發光裝置不限於圖6及7中所示之類型,且可自由地應用於任何類型的裝置。例如,即使將根據具體例的螢光材料用於表面安裝型發光裝置中,仍可獲得相同的效果。
包括具體例的螢光材料之LED燈可用於儀器的許多顯示元件中,諸如行動裝置、PC周邊設備、OA設備、各種開關、用於背光之光源及顯示板。因為具體例的螢光材料有極佳的色彩純度,所以裝備有含該物質之磷層的發光裝置有極佳的色彩再現性。
具體例係藉由下列的實例進一步解釋,其不以任何方式限制具體例。
將作為起始材料的Sr3
N2
、EuN、Si3
N4
、Al2
O3
、CaCl2
及AlN分別以2.409公克、0.647公克、5.987公克、0.748公克、0.200公克及0.710公克之量秤重且在真空手套箱中的瑪瑙硏缽中乾混合。將混合物放入BN坩鍋中且接著在7.5大氣壓力的N2
氣體下以1850℃點火4小時,以合成螢光材料。分析所獲得之螢光材料,發現其組成物可以(Sr0.829
Ca0.039
Eu0.133
)2.99
Si12.7
Al3.32
O2.9
N20.9
代表,其對應於具有y=0.01,z=0.32,u=0.9及w=0.1之式(1)。
藉由點火所獲得之螢光材料呈黃綠色粉末形式,且以黑光激發時觀察出發綠光。將螢光材料以王水及接著以純水清洗,且隨後在乾燥烘箱中以150℃經12小時乾燥。
重複實例1之程序來合成螢光材料,除了以0.200公克NaF取代0.200公克CaCl2
以外。分析所獲得之螢光材料,發現其組成物可以(Sr0.860
Na0.039
Eu0.140
)2.88
Si12.7
Al3.32
O2.9
N20.8
代表,其對應於具有y=0.12,z=0.32,u=0.9及w=0.2之式(2)。
重複實例1之程序來合成螢光材料,除了以0.200公克SrF2
取代0.200公克CaCl2
以外。分析所獲得之螢光材料,發現其組成物可以(Sr0.872
Eu0.128
)2.94
Si12.8
Al3.24
O2.7
N21.4
代表,其對應於具有y=0.06,z=0.24,u=0.7及w=-0.4之式(1)。
重複實例1之程序來合成螢光材料,除了起始材料中不含有CaCl2
以外,其經命名之組成物為(Sr0.866
Eu0.134
)2.9
Si12.8
Al3.2
O2.2
N20.8
。
圖8至10分別為實例1至3中所合成之綠螢光材料的XRD輪廓。另一方面,比較性實例1之螢光材料得到與圖5中所示之Sr3
Al3
Si13
O2
N21
晶體沒有顯著差異的XRD輪廓。該等結果顯示實例1至3及比較性實例1的XRD輪廓彼此沒有顯著的差異,且由此發現實例1至3之螢光材料具有屬於與Sr3
Al3
Si13
O2
N21
晶體相同的群組之晶體結構。
將實例1至3及比較性實例1之每一綠螢光材料暴露在365奈米波長下具有波峰之黑光,以測量在2-度視域下發光之色度(Cx,Cy)。將結果陳列於表2中。實例1至3之Cy值為0.589至0.599,且因此與比較性實例1幾乎相同。然而,另一方面,實例1至3之Cx值為0.245至0.254,且由此顯著低於比較性實例1(亦即0.276)。此表明根據具體例的螢光材料改進了色純度。
應用實例101之發光裝置係藉由使用實例1中所合成之螢光材料而製造。裝置具有根據圖7A之結構。尤其將在445奈米下得到發射波峰的發光二極體焊接在8毫米正方形AlN封裝上且以金線方式連至電極。接著將二極體以透明樹脂成為圓頂且將圓頂以含有在665奈米下得到發射波峰的10重量%之紅螢光材料CaAlSiN3
:Eu2+
的透明樹脂層塗佈。再者,在其上提供另一透明樹脂層及又一含有40重量%之實例1的螢光材料之透明樹脂層,以製造發光裝置。
重複應用實例101之程序來製造比較性應用實例101之發光裝置,除了使用比較性實例1之螢光材料作為綠螢光材料以外。
經由在圖11中所示之具有透射光譜的濾光片觀察關於應用實例101及比較性應用實例101之每一發光裝置的發射,以測定NTSC比值。結果發現應用實例101及比較性應用實例101的NTSC比值分別為101及100。在此以美國國家電視系統委員會(National Television System Committee)命名之〝NTSC〞為美國所使用之類比電視系統。顯示器之〝NTSC比值〞意謂顯示器可再現多少的色彩區域之比值,其先決條件係能夠由NTSC系統再現之色彩區域係以CIE(國際照明委員會(Commission Internationale del’clairage)所裁定之1976 UCS色彩圖為基準被視為100%。NTSC比值越高,則顯示器的色彩再現越優等。應用實例101之裝置展現更高於比較性應用實例101的NTSC比值,且據此發現應用實例101之裝置可提供更好的色彩再現性。
雖然已說明確信的具體例,但是該等具體例僅以實例方式呈現,且不意欲限制本發明的範圍。事實上,本文所述之新穎方法及系統可以各種其他形式具體化;此外,可進行本文所述之方法及系統形式的各種刪除、取代及變化而不違背本發明的精神。意欲以伴隨之申請專利範圍及彼之等同物涵蓋會落在本發明的範圍及精神內的該等形式或修改。
600...樹脂桿
601...導線
602...導線
603...樹脂組件
604...反射表面
605...凹部
606...發光晶片
607...焊線
608...焊線
609...磷層
610...螢光材料
611...樹脂層
701...發光晶片
703...導電線
704...透明樹脂層
705...含有發紅光之螢光材料的透明樹脂層
706...透明樹脂層
707...含有發綠光之螢光材料的透明樹脂層
708...透明樹脂層
709...含有發藍光之螢光材料的層
圖1(A)至(C)例證第一種Sr3
Al3
Si13
O2
N21
晶格結構。圖1(A)、1(B)及1(C)分別為沿著a、b及c軸的Sr3
Al3
Si13
O2
N21
晶體結構之投影。
圖2(A)至(C)例證第二種Sr3
Al3
Si13
O2
N21
晶格結構。圖2(A)、2(B)及2(C)分別為沿著a、b及c軸的Sr3
Al3
Si13
O2
N21
晶體結構之投影。
圖3(A)至(C)例證第三種Sr3
Al3
Si13
O2
N21
晶格結構。圖3(A)、3(B)及3(C)分別為沿著a、b及c軸的Sr3
Al3
Si13
O2
N21
晶體結構之投影。
圖4(A)至(C)例證第四種Sr3
Al3
Si13
O2
N21
晶格結構。圖4(A)、4(B)及4(C)分別為沿著a、b及c軸的Sr3
Al3
Si13
O2
N21
晶體結構之投影。
圖5為具有Sr3
Al3
Si13
O2
N21
晶體結構之螢光材料的XRD輪廓。
圖6為圖式例證利用根據具體例的螢光材料之發光裝置結構的橫截面圖。
圖7(A)及(B)為圖式例證利用根據具體例的螢光材料之其他發光裝置結構的橫截面圖。
圖8為實例1中之螢光材料的XRD輪廓。
圖9為實例2中之螢光材料的XRD輪廓。
圖10為實例3中之螢光材料的XRD輪廓。
圖11顯示在應用實例101及比較性應用實例101中所使用之濾光片的透射光譜。
Claims (8)
- 一種製造以下式(2)代表之氧氮化物螢光材料之方法:(M’1-x-x0 M0 x0 Rx )3-y Si13-z Al3+z O2+u N21-w (2)其中M’係選自除了Ca以外的IIA族元素;M0 係選自由下列各物所組成群組之元素:Ca及Na;R係Eu;且x、x0、y、z、u及w為分別滿足0<x≦1,0<x0≦0.08,-0.1≦y≦0.15,-1≦z≦1,及-1<u-w≦1.5之數值;該方法包含以下步驟:將該元素M’之氮化物或碳化物,該元素M0 之鹵化物,該元素R之氧化物、氮化物或碳化物,Si之氮化物、氧化物或碳化物,與Al之氮化物、氧化物或碳化物混合,以製備材料混合物;將該材料混合物點火;且接著將點火之產物酸清洗。
- 根據申請專利範圍第1項之方法,其中M’係選自由下列各物所組成之群組:Mg及Sr。
- 根據申請專利範圍第1項之方法,其中該M’之氮化物係選自由下列各物所組成之群組:Sr3 N2 、Sr2 N及SrN。
- 根據申請專利範圍第1項之方法,其中該R之氮化物為EuN。
- 根據申請專利範圍第1項之方法,其中該元素M0 之鹵化物為CaCl2 或NaF。
- 一種氧氮化物螢光材料,其係以下式(2)代表:(M’1-x-x0 M0 x0 Rx )3-y Si13-z Al3+z O2+u N21-w (2)其中M’係選自除了Ca以外的IIA族元素;M0 係選自由下列各物所組成群組之元素:Ca及Na;R係Eu;且x、x0、y、z、u及w為分別滿足0<x≦1,0<x0≦0.08,-0.1≦y≦0.15,-1≦z≦1,及-1<u-w≦1.5之數值;且在以250至500奈米之波長範圍內的光激發時,發射具有波峰在490至580奈米之波長範圍內的發光。
- 根據申請專利範圍第6項之氧氮化物螢光材料,其中M’係選自由下列各物所組成之群組:Mg及Sr。
- 一種發光裝置,其包含:發光元件,其發散在250至500奈米之波長範圍內的光,及磷層,其係提供在該發光元件上且含有根據申請專利範圍第6項之氧氮化物螢光材料。
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Publication number | Priority date | Publication date | Assignee | Title |
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JP5592602B2 (ja) * | 2008-07-31 | 2014-09-17 | 株式会社東芝 | 蛍光体およびそれを用いた発光装置 |
EP2569247A4 (en) | 2010-05-14 | 2014-04-16 | Lightscape Materials Inc | PHOSPHORES BASED ON CARBONITRIDES AND LIGHT EMITTING DIODES USING THEM |
CN102939355B (zh) * | 2010-05-14 | 2016-10-26 | 渲染材料公司 | 氧碳氮化物磷光体和使用该材料的发光器件 |
EP2615060A4 (en) * | 2010-08-19 | 2016-02-24 | Ube Industries | SILICON NITRIDE POWDER FOR A SILICONUMIDRIDE FLUORESCENCE MATERIAL, SR3AL3SI13O2N21 FLUORESCENCE MATERIAL AND BETA SIALON FLUORESCENCE MATERIAL MANUFACTURED THEREFROM, AND METHOD FOR PRODUCING THEREOF |
JP5076017B2 (ja) | 2010-08-23 | 2012-11-21 | 株式会社東芝 | 発光装置 |
JP4991958B2 (ja) | 2010-09-06 | 2012-08-08 | 株式会社東芝 | 発光装置 |
JP5127964B2 (ja) | 2010-09-06 | 2013-01-23 | 株式会社東芝 | 発光装置 |
JP4929413B2 (ja) | 2010-09-07 | 2012-05-09 | 株式会社東芝 | 発光装置 |
JP5319743B2 (ja) | 2010-09-08 | 2013-10-16 | 株式会社東芝 | 発光装置 |
JP5185421B2 (ja) | 2010-09-09 | 2013-04-17 | 株式会社東芝 | 赤色発光蛍光体およびそれを用いた発光装置 |
US8535566B2 (en) | 2010-09-10 | 2013-09-17 | Lightscape Materials, Inc. | Silicon carbidonitride based phosphors and lighting devices using the same |
JP5325959B2 (ja) * | 2011-03-09 | 2013-10-23 | 株式会社東芝 | 蛍光体およびそれを用いた発光装置 |
CN103443243B (zh) * | 2011-03-17 | 2015-09-09 | 株式会社东芝 | 荧光体和发光装置 |
CN102903829B (zh) * | 2011-07-26 | 2015-01-07 | 展晶科技(深圳)有限公司 | 发光二极管光源装置 |
JP5634352B2 (ja) | 2011-08-24 | 2014-12-03 | 株式会社東芝 | 蛍光体、発光装置および蛍光体の製造方法 |
KR101610565B1 (ko) * | 2011-11-07 | 2016-04-07 | 코쿠리츠켄큐카이하츠호징 붓시쯔 자이료 켄큐키코 | 형광체 및 제조 방법, 형광체를 사용하는 발광 장치 및 화상 표시 장치 |
US9017574B2 (en) | 2011-12-19 | 2015-04-28 | Lightscape Materials, Inc. | Carbidonitride phosphors and LED lighting devices using the same |
WO2013137434A1 (ja) * | 2012-03-16 | 2013-09-19 | 株式会社東芝 | 蛍光体、蛍光体の製造方法および発光装置 |
US8679367B2 (en) * | 2012-08-09 | 2014-03-25 | Intematix Corporation | Green-emitting (oxy)nitride-based phosphors and light-emitting device using the same |
US8815121B2 (en) | 2012-08-31 | 2014-08-26 | Lightscape Materials, Inc. | Halogenated oxycarbidonitride phosphor and devices using same |
JP6645429B2 (ja) * | 2014-08-07 | 2020-02-14 | 三菱ケミカル株式会社 | 蛍光体、発光装置、画像表示装置及び照明装置 |
US9315725B2 (en) | 2014-08-28 | 2016-04-19 | Lightscape Materials, Inc. | Method of making EU2+ activated inorganic red phosphor |
US9200199B1 (en) | 2014-08-28 | 2015-12-01 | Lightscape Materials, Inc. | Inorganic red phosphor and lighting devices comprising same |
US9200198B1 (en) | 2014-08-28 | 2015-12-01 | Lightscape Materials, Inc. | Inorganic phosphor and light emitting devices comprising same |
CN106221696B (zh) * | 2016-07-22 | 2018-08-28 | 中国科学院上海硅酸盐研究所 | 一种提高稀土掺杂Ca-α-Sialon氧氮化物发光强度的方法 |
DE102019104008B4 (de) | 2019-02-18 | 2022-02-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtstoff, verfahren zur herstellung eines leuchtstoffs und optoelektronisches bauelement |
CN116002752A (zh) * | 2022-11-03 | 2023-04-25 | 昆明理工大学 | 含镱铒离子和银的手性卤氧化铋二维材料及其制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Family Cites Families (12)
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JP3837588B2 (ja) * | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 蛍光体と蛍光体を用いた発光器具 |
JP3921545B2 (ja) | 2004-03-12 | 2007-05-30 | 独立行政法人物質・材料研究機構 | 蛍光体とその製造方法 |
KR20070115951A (ko) * | 2005-03-04 | 2007-12-06 | 도와 일렉트로닉스 가부시키가이샤 | 형광체 및 그 제조 방법 및 상기 형광체를 이용한 발광장치 |
US8062549B2 (en) | 2005-09-27 | 2011-11-22 | Mitsubishi Chemical Corporation | Phosphor and manufacturing method therefore, and light emission device using the phosphor |
JP4238269B2 (ja) * | 2006-02-02 | 2009-03-18 | 三菱化学株式会社 | 複合酸窒化物蛍光体、それを用いた発光装置、画像表示装置、照明装置及び蛍光体含有組成物、並びに、複合酸窒化物 |
JP4762248B2 (ja) | 2006-03-10 | 2011-08-31 | 株式会社東芝 | 蛍光体 |
JP5367218B2 (ja) | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
JP5412710B2 (ja) * | 2007-01-31 | 2014-02-12 | 日亜化学工業株式会社 | 窒化物系蛍光体又は酸窒化物系蛍光体 |
KR101260101B1 (ko) | 2007-04-18 | 2013-05-02 | 미쓰비시 가가꾸 가부시키가이샤 | 형광체 및 그 제조 방법, 형광체 함유 조성물, 발광 장치, 조명 장치, 화상 표시 장치, 그리고 질소 함유 화합물 |
WO2009072043A1 (en) | 2007-12-03 | 2009-06-11 | Philips Intellectual Property & Standards Gmbh | Light emitting device comprising a green emitting sialon-based material |
JP5171460B2 (ja) | 2008-07-29 | 2013-03-27 | 京セラ株式会社 | 無線基地局および無線通信方法 |
JP4869317B2 (ja) | 2008-10-29 | 2012-02-08 | 株式会社東芝 | 赤色蛍光体およびそれを用いた発光装置 |
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TW201129679A (en) | 2011-09-01 |
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US20110204769A1 (en) | 2011-08-25 |
EP2361960B1 (en) | 2013-01-02 |
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