TWI500257B - 跨阻放大器及其方法 - Google Patents

跨阻放大器及其方法 Download PDF

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Publication number
TWI500257B
TWI500257B TW101132817A TW101132817A TWI500257B TW I500257 B TWI500257 B TW I500257B TW 101132817 A TW101132817 A TW 101132817A TW 101132817 A TW101132817 A TW 101132817A TW I500257 B TWI500257 B TW I500257B
Authority
TW
Taiwan
Prior art keywords
current
diode
node
circuit node
transimpedance amplifier
Prior art date
Application number
TW101132817A
Other languages
English (en)
Chinese (zh)
Other versions
TW201315140A (zh
Inventor
Chia-Liang Lin
Original Assignee
Realtek Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Realtek Semiconductor Corp filed Critical Realtek Semiconductor Corp
Publication of TW201315140A publication Critical patent/TW201315140A/zh
Application granted granted Critical
Publication of TWI500257B publication Critical patent/TWI500257B/zh

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/082Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
TW101132817A 2011-09-21 2012-09-07 跨阻放大器及其方法 TWI500257B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/238,780 US8487702B2 (en) 2011-09-21 2011-09-21 Transimpedance amplifier and method thereof

Publications (2)

Publication Number Publication Date
TW201315140A TW201315140A (zh) 2013-04-01
TWI500257B true TWI500257B (zh) 2015-09-11

Family

ID=47880122

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101132817A TWI500257B (zh) 2011-09-21 2012-09-07 跨阻放大器及其方法

Country Status (3)

Country Link
US (1) US8487702B2 (und)
CN (1) CN103023444B (und)
TW (1) TWI500257B (und)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9160388B2 (en) * 2012-12-18 2015-10-13 Broadcom Corporation Receiver architecture with complementary passive mixer and complementary common-gate tia with low-noise gain control
CN103441737B (zh) * 2013-08-27 2016-06-01 西北工业大学 跨阻前置放大器电路
CN105021912B (zh) * 2014-04-29 2018-04-13 全汉企业股份有限公司 用于led驱动器老化测试的负载电路及负载装置
JP6397374B2 (ja) * 2015-07-01 2018-09-26 日本電信電話株式会社 増幅器
US9767888B1 (en) * 2016-12-30 2017-09-19 Cadence Design Systems, Inc. Methods and devices for high-sensitivity memory interface receiver
CN107395133B (zh) * 2017-07-25 2024-01-02 杭州洪芯微电子科技有限公司 跨阻放大器
US10447218B1 (en) * 2018-07-16 2019-10-15 Realtek Semiconductor Corp. Hybrid differential amplifier and method thereof
JP7246873B2 (ja) * 2018-07-26 2023-03-28 三星電子株式会社 電力増幅器
US10720890B1 (en) * 2019-02-12 2020-07-21 Realtek Semiconductor Corp. High-speed high-accuracy amplifier and method thereof
CN110212867B (zh) 2019-05-23 2020-11-27 东南大学 一种宽电压跨阻放大器
WO2021102656A1 (zh) * 2019-11-25 2021-06-03 深圳市汇顶科技股份有限公司 一种放大电路
US12323115B2 (en) 2020-12-29 2025-06-03 Samsung Electronics Co., Ltd. Operational transconductance amplifier circuit including active inductor
US20230061926A1 (en) * 2021-08-30 2023-03-02 Continental Automotive Systems, Inc. Lidar sensor with high dynamic range pulse receiver

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080231362A1 (en) * 2007-03-19 2008-09-25 Qualcomm Incorporated Linear transconductor for rf communications
US7764091B2 (en) * 2008-07-31 2010-07-27 Freescale Semiconductor, Inc. Square to pseudo-sinusoidal clock conversion circuit and method
US7898339B2 (en) * 2008-05-28 2011-03-01 Kabushiki Kaisha Nihon Micronics Amplifier circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7388436B2 (en) * 2005-11-02 2008-06-17 Marvell World Trade Ltd High-bandwidth high-gain amplifier
JP2009290520A (ja) * 2008-05-29 2009-12-10 Hitachi Ltd トランスインピーダンスアンプ、レギュレイテッド型トランスインピーダンスアンプ及び光受信器
US8283946B2 (en) * 2010-04-15 2012-10-09 Micron Technology, Inc. Signaling systems, preamplifiers, memory devices and methods

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080231362A1 (en) * 2007-03-19 2008-09-25 Qualcomm Incorporated Linear transconductor for rf communications
US7898339B2 (en) * 2008-05-28 2011-03-01 Kabushiki Kaisha Nihon Micronics Amplifier circuit
US7764091B2 (en) * 2008-07-31 2010-07-27 Freescale Semiconductor, Inc. Square to pseudo-sinusoidal clock conversion circuit and method

Also Published As

Publication number Publication date
CN103023444A (zh) 2013-04-03
US20130069727A1 (en) 2013-03-21
CN103023444B (zh) 2016-04-13
TW201315140A (zh) 2013-04-01
US8487702B2 (en) 2013-07-16

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