TWI498955B - A method for manufacturing a semiconductor wafer with a spin - die tape and an adhesive layer - Google Patents

Description

Method for manufacturing dicing-bonded ribbon and semiconductor wafer with adhesive layer

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a dicing-adhesive tape for use in obtaining a semiconductor wafer with an adhesive layer and for bonding a semiconductor wafer with an adhesive layer, and the use of the dicing-adhesive tape A method of manufacturing a semiconductor wafer of an adhesive layer.

When a semiconductor wafer is cut from a semiconductor wafer, a dicing method called a pre-cut method is used. An example of the pre-cutting method is disclosed, for example, in Patent Document 1 below.

In the pre-cutting method, a slit is first formed on the surface of the semiconductor wafer. Next, a protective sheet is adhered to the surface of the semiconductor wafer on which the slit is formed. Thereafter, the back surface of the semiconductor wafer is polished to the slit portion, and the thickness of the semiconductor wafer is thinned and divided into individual semiconductor wafers. A protective sheet is adhered to the surface of the divided semiconductor wafer divided into individual semiconductor wafers.

Further, in order to easily mount the respective semiconductor wafers obtained by the above-described pre-crystallizing method on the substrate, the adhesion layer is adhered to the back surface of the semiconductor wafer. In order to obtain the semiconductor wafer with the viscous layer, a diced-bonded ribbon comprising a viscous layer and a dicing layer is used.

As an example of the dicing-bonding ribbon, Patent Document 2 below discloses a cleavage-bonding ribbon in which a viscous layer is laminated on a release sheet and is detached so as to cover the viscous layer. A layer of dicing is deposited on the sheet and the viscous layer. The die layer is taken out after dicing together with the semiconductor wafer for the layer of the die bond of the semiconductor wafer. In order to facilitate the peeling of the dicing layer from the peeling sheet, a protruding portion is provided on the periphery of the dicing layer.

[Advanced technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-245467

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2005-116790

When a semiconductor wafer with a die-bonding layer is obtained by using the dicing-bonded ribbon described in Patent Document 1, the protruding portion of the dicing layer is used as a starting point of dicing, and the viscous layer and the dicing layer are peeled off from the release sheet to make the viscous layer The outer portions of the crystal layer and the crystal cutting layer are exposed. Next, the exposed die layer is adhered to the divided semiconductor wafer, and the outer peripheral portion of the exposed dicing layer is adhered to the dicing ring. Next, the protective sheet adhered to the surface of the divided semiconductor wafer is peeled off. Thereafter, the die layer is diced along the cut portion of the divided semiconductor wafer. After dicing, the semiconductor wafer with the viscous layer is peeled off from the dicing layer. The semiconductor wafer with the attached die layer is attached to the substrate from the side of the die layer.

In the dicing-bonding ribbon described in Patent Document 1, there is a case where the dicing-bonding ribbon is adhered to the dicing ring in a state of local deformation.

In this case, when the dicing layer is adhered to the dicing ring, the contraction force of the tensile stress is usually applied to the dicing layer, and the contraction force of the dicing layer is locally different. . Therefore, there is a case where the dicing line is bent as a cut portion of the divided semiconductor wafer (a phenomenon called ridge displacement). In particular, when the protective sheet is heated and peeled off, the tensile stress at the time of adhesion of the dicing layer is easily relaxed by heating, so that the dicing line is easily bent. Therefore, there is a case where the crystal layer cannot be crystallized with high precision or the wafers are not uniformly stretched, and the pick-up property of the semiconductor wafer with the adhesion layer is low.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor wafer having an adhesive layer capable of suppressing local deformation when adhered to a dicing ring, thereby improving the precision of dicing, and by uniformly widening between wafers, it is possible to improve A dicing-bonding ribbon for picking up a semiconductor wafer with an adhesive layer, and a method of manufacturing a semiconductor wafer using the dicing-bonding ribbon.

According to a broader aspect of the present invention, there is provided a dicing-bonding layer comprising an adhesive layer and a substrate layer laminated on one side of the adhesive layer, and in the case of dicing, outside the substrate layer a part of the substrate is adhered to the dicing ring, and the substrate layer has an adhesion starting point adhered to the dicing ring at the peripheral portion, and adheres to the dicing ring in a portion of the substrate layer other than the adhesion starting point. The width of the portion is set to W (mm), and when the outer diameter of the base material layer in the portion other than the adhesion starting point of the base material layer is D (mm), the adhesion starting point from the base material layer The length L (mm) of the above-mentioned adhesion starting point at the position where the outer peripheral end of the side is at a distance of 0.3 W (mm) from the inner side is in the range of 0.30D to 0.44D (mm).

In a specific aspect of the dicing-bonding ribbon of the present invention, the curvature of the outer peripheral end of the adhesion starting point side of the substrate layer is greater than the curvature of the peripheral end of the substrate layer other than the adhesion starting point.

In another specific aspect of the dicing-bonding ribbon of the present invention, the base material layer has a convex portion at an outer peripheral end of the adhesion starting point side, and the outer peripheral end of the adhesion starting point side of the base material layer is the convex portion. The apex.

In still another specific aspect of the dicing-bonding ribbon of the present invention, the substrate layer has a plurality of convex portions at the outer peripheral end of the adhesion starting point side, and the plurality of convex portions are connected by a curve.

The method for fabricating a semiconductor wafer with an adhesive layer according to the present invention comprises the steps of: using a diced-bonded ribbon formed according to the present invention, and a segment comprising a protective sheet and laminated on one side of the protective sheet and divided into individual semiconductor wafers a laminated body of the semiconductor wafer, wherein the adhesive layer of the dicing-bonding ribbon is adhered to the divided semiconductor wafer of the laminated body; and the adhesion starting point of the substrate layer is adhered to the annular shape a ring, and a peripheral portion of the substrate layer excluding the adhesion starting point is adhered to the dicing ring; the protective sheet is peeled off from the divided semiconductor wafer; and the cut portion of the semiconductor wafer is separated The adhesive layer is subjected to dicing; and after the dicing, the adhesive layer of the semiconductor wafer is peeled off from the base material layer, and the semiconductor wafer is taken out together with the adhesive layer. Furthermore, the step of adhering the adhesive layer of the dicing-bonding ribbon to the divided semiconductor wafer of the laminate; and adhering the adhesion starting point of the substrate layer to the ring may be simultaneously performed. The dicing ring of the shape is followed by adhering the outer peripheral portion of the base material layer other than the above-mentioned adhesion starting point to the above-mentioned cleavage ring.

In a specific aspect of the method for fabricating a semiconductor wafer with an adhesive layer of the present invention, the method further includes the steps of: forming a slit for dividing the semiconductor wafer into individual semiconductor wafers on a surface of the semiconductor wafer; And forming a surface-adhesive protective sheet of the semiconductor wafer with the slit; and polishing the back surface of the semiconductor wafer to which the protective sheet is adhered, and dividing the semiconductor wafer into individual semiconductor wafers to obtain the laminated body.

Another method of manufacturing a semiconductor wafer with an adhesive layer of the present invention comprises the steps of adhering the above-mentioned adhesive layer of the above-mentioned diced-adhesive tape to a dicing-bonded ribbon and a semiconductor wafer constructed according to the present invention. The semiconductor wafer; the adhesion starting point of the substrate layer is adhered to an annular dicing ring, and then the outer peripheral portion of the substrate layer except the adhesion starting point is adhered to the dicing ring; The round and the adhesive layer are subjected to dicing; and after the dicing, the adhesive layer of the semiconductor wafer is peeled off from the base material layer, and the semiconductor wafer is taken out together with the adhesive layer. Furthermore, the following steps may be simultaneously performed: adhering the divided semiconductor wafer to the laminated body; and adhering the adhesion starting point of the substrate layer to the annular cleavage ring, and secondly, in addition to the adhesion starting point The outer peripheral portion of the above-mentioned base material layer is adhered to the above-mentioned dicing ring.

The cleavage-adhesive ribbon of the present invention has a width at which a portion of the substrate layer excluding the adhesion starting point adheres to the dicing ring is W (mm), and a portion which will be outside the adhesion starting point When the outer diameter of the layer is D (mm), the length L (mm) of the adhesion starting point at a position of the distance from the front end of the base layer to the inner side of 0.3 W (mm) from the end of the adhesion layer is 0.30D to 0.44. In the range of D (mm), the adhesion starting point of the substrate layer is adhered to the annular dicing ring, and the outer peripheral portion of the substrate layer except the adhesion starting point is adhered to the dicing ring, thereby suppressing the local portion. Sexual deformation adheres the diced-bonded ribbon to the cleavage ring. Therefore, the dicing line after dicing is difficult to bend. Therefore, the pick-up property of the semiconductor wafer with the adhesive layer can be improved.

Further, when a semiconductor wafer with an adhesive layer is obtained by using a protective sheet and a laminated body of the divided semiconductor wafer, even if the adhesive layer of the dicing-adhesive tape is adhered to the divided semiconductor wafer of the laminated body, Further, since the semiconductor wafer is peeled off from the divided protective sheet, the dicing line which is the cut portion of the divided semiconductor wafer is also difficult to bend. Therefore, the adhesive layer can be crystallized with high precision, and the pick-up property can be improved.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be elucidated by referring to the drawings and the embodiments of the invention.

(Cut-bonded ribbon)

1(a) and 1(b) are diagrams schematically showing a diced-bonded ribbon according to an embodiment of the present invention. Fig. 1(a) is a partially missing plan view, and Fig. 1(b) is a partially missing front cross-sectional view taken along line I-I of Fig. 1(a). In addition, in FIG. 1 and the following drawings, the size and size are appropriately changed from the actual size and size for convenience of illustration.

As shown in FIGS. 1(a) and (b), the diced-bonded ribbon 1 comprises a strip-shaped release layer 2. On the upper surface 2a of the release layer 2, an adhesive layer 3, a base material layer 4, and a crystal cut layer 5 are laminated in this order. The base material layer 4 is laminated on one surface 3a (first surface) of the adhesive layer 3. A release layer 2 is laminated on the other surface 3b (second surface) of the adhesive layer 3.

A plurality of laminates including the adhesive layer 3, the base material layer 4, and the crystal cut layer 5 are disposed at equal intervals on the upper surface 2a of the strip-shaped release layer 2. On the side of the laminate, a protective sheet may be provided on the upper surface 2a of the release layer 2.

The release layer 2 is, for example, a release film. The release layer 2 serves to protect the other side 3b of the adhesive semiconductor layer 3 to which the semiconductor wafer is adhered. Further, the release layer 2 can be omitted.

Examples of the material constituting the release layer 2 include a polyester resin such as a polyethylene terephthalate resin, a polytetrafluoroethylene resin, a polyethylene resin, a polypropylene resin, a polymethylpentene resin, and a poly A polyolefin resin such as a vinyl acetate resin, a polyvinyl chloride resin, or a plastic resin such as a polyimide resin.

The surface of the release layer 2 can also be subjected to mold release treatment. The release layer may be a single layer or a plurality of layers. In the case where the release layer is a plurality of layers, the layers may also be formed of different resins.

The thickness of the release layer 2 is preferably in the range of 10 to 100 μm from the viewpoint of further improving the rationality or releasability of the release layer 2.

Adhesive layer 3 is used for the layer of the die bond of the semiconductor wafer. The adhesive layer 3 is used to bond a semiconductor wafer to a substrate or other semiconductor wafer or the like.

The pressure-sensitive adhesive layer 3 is formed of, for example, a curable resin composition containing a curable compound such as a suitable curable resin, or a thermoplastic resin. Since the curable resin composition before curing is soft, it is easily deformed by an external force. After the semiconductor wafer with the adhesive layer 3 is obtained, the obtained semiconductor wafer with the adhesive layer 3 is laminated from the side of the adhesive layer 3 to the adherend such as a substrate. Thereafter, energy of heat or light is applied to harden the adhesive layer 3, whereby the semiconductor wafer can be firmly bonded to the adherend via the adhesive layer 3.

In order to harden the said curable resin composition, a hardening agent is used. Examples of the curing agent include a heat curing type acid anhydride type curing agent such as trialkyltetrahydrophthalic anhydride, a latent curing agent such as a phenol curing agent, an amine curing agent or dicyandiamide, and a cationic contact lens. Medium hardener, etc. In order to adjust the hardening speed, the physical properties of the cured product, and the like, the above-mentioned hardener and hardening accelerator may be used in combination.

The thickness of the adhesive layer 3 is not particularly limited. The thickness of the adhesive layer 3 is preferably in the range of 1 to 100 μm. A lower limit of the thickness of the adhesive layer 3 is 3 μm, and a higher limit is 60 μm. If the thickness of the adhesive layer 3 is within the above range, the semiconductor wafer can be easily adhered, and the thickness of the semiconductor device can be further increased.

The base material layer 4 includes a non-adhesive non-adhesive portion 4A. The non-adhesive portion 4A is provided in a central region of the base material layer 4. The non-adhesive portion 4A is provided at a portion corresponding to the position of the adhesive layer 3 to which the semiconductor wafer is adhered. The planar shape of the non-adhesive portion 4A is circular. The substrate layer 4 is larger than the adhesive layer 3 when viewed in plan, and the non-adhesive portion 4A is larger than the adhesive layer 3. Therefore, the non-adhesive portion 4A has a region that protrudes more laterally than the outer peripheral side surface 3c of the adhesive layer 3. Therefore, when the semiconductor wafer is adhered to the adhesive layer 3, the semiconductor wafer can be accurately aligned with the portion of the adhesive layer 3 to which the non-adhesive portion 4A is adhered. After the adhesion, the non-adhesive portion 4A can be reliably disposed on one surface 3a of the adhesive layer 3 to which the semiconductor wafer is adhered. Therefore, after the dicing, the semiconductor wafer with the adhesive layer 3 can be easily peeled off from the non-adhesive portion 4A of the base material layer 4. Therefore, the production loss can be reduced, thereby improving the yield.

In addition, the term "non-adhesive" means not only that the surface does not have adhesiveness, but also the degree of adhesion which does not adhere when the finger touches the surface. Specifically, the term "non-adhesive" means that the non-adhesive portion 4A of the base material layer 4 is adhered to the stainless steel plate, and when the base material layer 4 is peeled off at a peeling speed of 300 mm/min, the adhesive force is 0.05 N/25. Below the mm width.

The base material layer 4 includes an adhesive portion 4B having adhesiveness in a region of the outer portion of the non-adhesive portion 4A. The adhesive portion 4B is annular. The base material layer 4 covers the adhesive layer 3, and the adhesive portion 4B of the base material layer 4 adheres to the upper surface 2a of the release layer 2. The non-adhesive portion 4A of the base material layer 4 is formed over the entire area of one surface 3a of the adhesive layer 3. The adhesive portion 4B is not laminated on one surface 3a of the adhesive layer 3. At the time of dicing, the dicing ring is adhered to the adhering portion 4B of the base material layer 4.

In Fig. 2, only the base material layer 4 of the diced-bonded ribbon 1 is enlarged and shown in plan view.

As shown in FIG. 2, the base material layer 4 has an adhesion starting point 4C adhered to the dicing ring at the beginning of adhesion at the outer peripheral portion. Adhesion starting point 4C is the beginning of adhesion. When the semiconductor wafer with the adhesive layer is obtained, the outer peripheral portion of the base material layer 4 is adhered to the dicing ring from the adhesion starting point 4C. The portion of the base material layer 4 adhered to the dicing ring is an adhesive portion 4B having adhesiveness.

The planar shape of the base material layer 4 is substantially circular, and the planar shape of the base material layer 4 except for the portion of the adhesion starting point 4C is a part of a circle. In FIG. 2, a virtual line when a planar shape of the entire base material layer 4 is assumed to be circular is indicated by a dotted line.

The width of the portion of the base material layer 4 other than the adhesion starting point 4C adhered to the dicing ring is W (mm), and the outer diameter (diameter) of the substrate layer 4 which is outside the adhesion starting point 4C is set to D (mm). In the present embodiment, the length L (mm) of the adhesion starting point 4C at a position at a distance of 0.3 W (mm) from the front end of the base layer 4 from the outer edge of the adhesion start point 4C side is 0.30D to 0.44D (mm). Within the scope of). If the length L is less than 0.30 D, the possibility of local deformation at the time of adhesion increases. Moreover, if the length L is larger than 0.44D, the possibility of exposure from the dicing ring becomes high, and when it is exposed, it may adhere to other cleavage rings or to the processing apparatus during the transfer to the next step. The cause of the troubles of sticking to the peripheral parts. Further, if the length of the adhesion starting point is too short, the stress tends to concentrate on the adhesion starting point at the start of adhesion. By extending the length of the adhesion starting point, the stress at the beginning of the adhesion can be dispersed along the length of the adhesion starting point. Therefore, it is possible to prevent the positional shift of the plurality of semiconductor wafers in the semiconductor wafer after the pre-cutting.

The front end of the adhesion starting point 4C is set to a length from the front end in the direction of adhesion of the virtual line (one dot chain line of FIG. 2) in the direction in which the planar shape of the entire base layer 4 is assumed to be circular. Z (mm). In the following embodiment, the length that protrudes in the same manner is also set as the protruding length Z (mm). The protruding length Z (mm) should be less than 0.20 W, and the degree of protrusion should be small. When the amount of protrusion becomes large, when the adhesion to the dicing ring occurs, the width of the portion adhered to the dicing ring becomes uneven, or the self-cut ring is exposed. The term "adhesion direction" means a direction in which one end of a base material layer adhered to an adhesion start point of a dicing ring at the beginning of adhesion and a other end opposite to the one end side are provided.

The width W is a distance from the inner peripheral end of the portion other than the adhesion starting point 4C to the outer peripheral end of the base layer 4 when the base layer 4 is adhered to the dicing ring.

The planar shape of the base material layer 4 except for the adhesion starting point 4C portion is a circular portion, and the outer diameter D is the outer diameter (diameter) of the base material layer 4 of the circular portion.

The adhesion starting point 4C has a width direction and a length direction longer than the width direction. The length L is expressed in the longitudinal direction of the adhesion starting point 4C of the base layer 4 from the outer peripheral end of the adhesion starting point 4C side toward the inner side, that is, the distance of 0.3 W inward in the adhesion direction. The length L is a dimension in the longitudinal direction of the adhesion starting point 4C at a position from the outer peripheral end of the base layer 4 from the outer peripheral end of the adhesion starting point 4C to the side opposite to the adhesion starting point 4C side of the base material layer 4 by 0.3 W.

The base material layer 4 has three convex portions 4a to 4c at the outer peripheral end of the adhesion start point 4C side. The convex portion 4b is located between the convex portion 4a and the convex portion 4c. In Fig. 2, the apex of the convex portion 4a is represented as B1, the apex of the convex portion 4b is represented as A1, and the apex of the convex portion 4c is represented as B2. The adhesion starting point 4C side of the A1 base material layer 4 is the outer peripheral end.

In the base material layer 4, B1 and A1 are connected by a straight line, and A1 and B2 are connected by a straight line. The planar shape of the portion surrounded by the three straight lines connecting B1, A1, and B2 is an isosceles triangle connecting the straight lines of B1 and A1 and the lengths of the straight lines connecting A1 and B2. In Fig. 2, the intersection of the straight line connecting B1 and B2 with the perpendicular line from A1 to the straight line is denoted as A11.

The circular portion of B1 and the substrate layer 4, and the circular portion of B2 and the substrate layer 4 are connected by a straight line. In Fig. 2, the junction of B1 and the circular portion of the substrate layer 4 is denoted as C1, and the junction of B2 with the circular portion of the substrate layer 4 is denoted as C2. The circular portion of the linear substrate layer 4 connecting B1 and C1 is tangent to C1. The circular portion of the linear substrate layer 4 connecting B2 and C2 is tangent to C2.

The non-adhesive portion 4A of the base material layer 4 and the adhesive portion 4B are integrally formed. The non-adhesive portion 4A and the adhesive portion 4B are formed of the same material, and are not formed of different materials.

The base material layer 4 can be formed, for example, by using a composition having an active energy ray-curing type or a thermosetting type. In the case of an active energy ray-curable composition, the adhesion of the substrate layer 4 can be locally different by partially adjusting the amount of irradiation with respect to the active energy ray of the composition. In order to make the base material layer 4 non-adhesive, it is sufficient to increase the amount of irradiation of the active energy ray. In order to make the base material layer 4 adhesive, it is sufficient that the active energy ray is not irradiated or the amount of irradiation of the active energy ray is reduced.

The base material layer 4 is preferably formed of a composition containing an acrylic polymer. The base material layer 4 is preferably formed of a crosslinked body obtained by crosslinking a composition containing an acrylic polymer. In this case, the machinability at the time of crystal cutting can be further improved. Moreover, the polarity, storage modulus or rupture elongation of the substrate layer 4 can be easily controlled and designed.

The acrylic polymer is not particularly limited. The above acrylic polymer is preferably an alkyl (meth)acrylate polymer. As the (meth)acrylic acid alkyl ester polymer, an alkyl (meth)acrylate polymer having an alkyl group having 1 to 18 carbon atoms is preferably used. By using an alkyl (meth) acrylate polymer having an alkyl group having 1 to 18 carbon atoms, the polarity of the substrate layer 4 can be sufficiently lowered, the surface energy of the substrate layer 4 can be lowered, and adhesion can be improved. The peelability of the agent layer 3 from the substrate layer 4.

The above composition preferably contains at least one of an active energy ray reaction initiator and a thermal reaction initiator, and more preferably an active energy ray reaction initiator. The active energy ray reaction initiator is preferably a photoreaction initiator.

The active energy ray includes ultraviolet rays, electron beams, α rays, β rays, γ rays, X rays, infrared rays, and visible rays. Among these active energy rays, ultraviolet rays or electron beams are preferable because they are excellent in hardenability and hardly deteriorated.

As the photoreaction initiator, for example, a photoradical generator, a photocation generator, or the like can be used. Examples of the thermal reaction initiator include a thermal radical generator and the like. In the above composition, an isocyanate crosslinking agent may be added to control the adhesion.

The thickness of the base material layer 4 is not particularly limited. The thickness of the substrate layer 4 is preferably in the range of 1 to 100 μm. A lower limit of the thickness of the substrate layer 4 is 5 μm, and a more preferred upper limit is 60 μm. If the thickness of the base material layer 4 satisfies the above preferred lower limit, the stretchability can be further improved. When the thickness of the base material layer 4 satisfies the above preferred upper limit, the thickness becomes more uniform, and the precision of the crystal cutting can be further improved.

The dicing layer 5 is, for example, a dicing film. Examples of the material constituting the crystal cut layer 5 include a polyester resin such as a polyethylene terephthalate resin, a polytetrafluoroethylene resin, a polyethylene resin, a polypropylene resin, a polymethylpentene resin, and a polyacetic acid. A polyolefin resin such as a vinyl ester resin, a polyvinyl chloride resin, or a plastic resin such as a polyimide resin. Among them, polyolefin resin is preferred because it has excellent stretchability and a small environmental load.

The thickness of the crystal cutting layer 5 is not particularly limited. The thickness of the dicing layer 5 is preferably in the range of 10 to 200 μm. A lower limit of the thickness of the dicing layer 5 is preferably 60 μm, and a more preferred upper limit is 150 μm. When the thickness of the dicing layer 5 is within the above range, the releasability of the release layer 2 and the stretchability of the dicing layer 5 can be further improved.

In the present embodiment, the planar shape of the crystal cutting layer 5 is the same as the planar shape of the base material layer 4. The planar shape of the dicing layer 5 may also be different from the planar shape of the substrate layer 4. The size of the dicing layer 5 may be larger than the size of the substrate layer 4 or smaller than the size of the substrate layer 4 within a range that does not impair the effects of the present invention. The size of the dicing layer 5 is preferably larger than the size of the substrate layer 4.

In the dicing-mulet zone 1, a dicing layer 5 is used. The dicing layer 5 may also be omitted, and the substrate layer 4 also serves as a dicing layer. In the dicing-adhesive tape 1, the dicing ring can be adhered to the adhesive portion 4B of the base material layer 4, so that it is not necessary to adhere the dicing ring to the dicing layer 5. Therefore, the crystal cutting layer 5 can be omitted. Since the dicing layer 5 does not need to adhere to the dicing ring, the dicing layer 5 may not have an adhesive force. Therefore, the material and composition constituting the crystal cutting layer 5 can be selected from a wider range.

In the case of dicing, the semiconductor wafer can be prevented from flying out more effectively. Therefore, it is preferable that the dicing layer 5 is adhered to the other surface of the base material layer 4 opposite to the surface on which the adhesive layer 3 is adhered. In this case, since the stretchability and the like are not greatly required for the base material layer 4, the material and composition constituting the base material layer 4 can be selected from a wider range.

3 and 4 show a modification of the base material layer.

The base material layers 11 and 12 shown in FIGS. 3 and 4 are configured in the same manner as the base material layer 4 except that the shape of the adhesion starting point is different. The base material layers 11 and 12 include the non-adhesive portions 11A and 12A and the adhesive portions 11B and 12B provided in the regions of the outer peripheral portions of the non-adhesive portions 11A and 12A. The portions of the base material layers 11 and 12 adhered to the dicing ring are adhesive portions 11B and 12B.

The planar shape of the substrate layers 11, 12 is substantially circular, and the planar shape of the substrate layers 11, 12 except for the portions of the adhesion starting points 11C, 12C is a part of a circle. In Figs. 3 and 4, the virtual line when the planar shape of the entire base material layers 11, 12 is assumed to be circular is indicated by a dotted line. The width of the portion of the base material layers 11 and 12 excluding the adhesion starting points 11C and 12C which adheres to the dicing ring is set to W (mm), and will be removed from the adhesion starting point 11C, 12C. The outer diameter of the outer base material layers 11, 12 is set to D (mm). The length L (mm) of the adhesion starting points 11C, 12C at the position of the distance from the front end of the outer peripheral edge 11C, 12C of the base material layers 11 and 12 to the inner side at a distance of 0.3 W (mm) is 0.30D to 0.44D (mm). Within the scope of). If the length L is less than 0.30 D, the possibility of local deformation at the time of adhesion increases. Moreover, if the length L is greater than 0.44D, the possibility of exposure from the dicing ring becomes high, and when it is exposed, there is a possibility of adhering to other cleavage rings during the transfer to the next step, or to the processing device. A problem in which the inside adheres to a problem such as a peripheral portion.

The base material layer 11 shown in Fig. 3 includes four convex portions 11a to 11d at the outer peripheral end of the adhesion starting point 11C side. The convex portion 11b and the convex portion 11c are located between the convex portion 11a and the convex portion 11d, and the convex portion 11b is located on the convex portion 11a side, and the convex portion 11c is located on the convex portion 11d side. In Fig. 3, the vertex of the convex portion 11a is represented as B1, the vertex of the convex portion 11b is represented as A1, the vertex of the convex portion 11c is represented as A2, and the vertex of the convex portion 11d is represented as B2. The A1 and A2 base material layers 11 adhere to the outer peripheral end of the starting point 11C side.

In the base material layer 11, B1 and A1 are connected by a straight line, A1 and A2 are connected by a curve, and A2 and B2 are connected by a straight line. The planar shape of the portion surrounded by the four straight lines connecting B1, A1, A2, and B2 is such that the straight line connecting A1 and A2 is the upper base, and the straight line connecting B1 and B2 is the isosceles trapezoid of the lower bottom. In Fig. 3, the deepest portion of the concave portion between the convex portion 11b and the convex portion 11c is denoted as A11. Further, in Fig. 3, the intersection of the straight line connecting B1 and B2 with the perpendicular line from A1 to the straight line is denoted as A21, and the line connecting B1 and B2 and the intersection of the straight line from A2 to the straight line of the straight line Expressed as A22.

The circular portion of B1 and the substrate layer 11, and the circular portion of B2 and the substrate layer 11 are connected by a straight line. In Fig. 3, the junction of B1 and the circular portion of the substrate layer 11 is denoted as C1, and the junction of B2 with the circular portion of the substrate layer 11 is denoted as C2. The straight line connecting B1 and C1 and the straight line connecting B2 and C2 are tangent lines of C1 and C2 of the circular portion of the base material layer 11, respectively.

The base material layer 12 shown in Fig. 4 includes four convex portions 12a to 12d at the outer peripheral end of the adhesion starting point 12C side. The convex portion 12b and the convex portion 12c are located between the convex portion 12a and the convex portion 12d, and the convex portion 12b is located on the convex portion 12a side, and the convex portion 12c is located on the convex portion 12d side. In FIG. 4, the vertex of the convex portion 12a is represented as A1, the vertex of the convex portion 12b is represented as A2, the vertex of the convex portion 21c is represented as A3, and the vertex of the convex portion 21d is represented as A4. A1, A2, A3, and A4 are the outer peripheral ends of the adhesion starting point 12C side of the base material layer 12.

In the base material layer 12, A1 and A2, A2 and A3, and A3 and A4 are respectively connected by a curve. In Fig. 4, the deepest portion of the concave portion between the convex portion 12a and the convex portion 12b is denoted as A11, the deepest portion of the concave portion between the convex portion 12b and the convex portion 12c is denoted as A12, and the convex portion 12c and the convex portion 12d The deepest portion between the recesses is denoted as A13.

A1 is connected to the circular portion of the substrate layer 12 and the circular portion of the substrate layer 12 of A4. In Fig. 4, the junction of A1 and the circular portion of the substrate layer 12 is denoted as C1, and the junction of A4 and the circular portion of the substrate layer 12 is denoted as C2. A1 and C1 are connected by a curve and a straight line, and the A1 side is a curve, and the C1 side is a straight line. In Fig. 4, the boundary between the curve extending from A1 and the straight line extending from C1 is represented as B1. A4 and C2 are connected by curves and straight lines, and the A4 side is a curve, and the C2 side is a straight line. In Fig. 4, the boundary between the curve extending from A4 and the straight line extending from C2 is represented as B2. The straight line extending from C1 and the straight line extending from C2 are the tangent to the circular portion of the substrate layer 12 at C1 and C2, respectively.

In Fig. 4, the intersection of the straight line connecting B1 and B2 with the perpendicular line from A1 to the straight line is denoted as A21, and the intersection of the straight line connecting B1 and B2 with the perpendicular line from A2 to the straight line is expressed as In A22, the intersection of the straight line connecting B1 and B2 with the perpendicular line from A3 to the straight line is denoted as A23, and the intersection of the straight line connecting B1 and B2 with the perpendicular line from A4 to the straight line is denoted as A24.

The front ends of the convex portions 12a to 12d are curved. The curvature of A1 to A4 at the outer peripheral end of the adhesion starting point 12C side of the base material layer 12 is larger than the curvature of the outer peripheral end of the portion of the base material layer 12 excluding the adhesion starting point 12C.

As shown in FIG. 3 and FIG. 4, the length L (mm) of the adhesion starting point at a position of a distance of 0.3 W (mm) from the front end of the base layer to the inner side of the adhesion layer is 0.30D to 0.44D ( Within the range of mm), the planar shape of the adhesion starting point of the substrate layer can be appropriately changed.

For example, in the base material layer 12, the curvature of the outer peripheral end of the adhesion starting point side of the base material layer is preferably larger than the curvature of the outer peripheral end of the base material layer except for the portion other than the adhesion starting point. In this case, when the release layer 2 is peeled off, the outer peripheral end of the base layer on the adhesion start side is a peeling origin, and the peeling can be easily performed, and the semiconductor wafer with the adhesive layer can be further increased. The adhesive layer is crystallized with precision.

The apex A1 of the outer peripheral end portion of the base material layer 4 on the adhesion start point 4C side. The base end layer 11 is adhered to the apex A1 and A2 of the outer peripheral end portion convex portions 11b and 11c on the outer side of the adhesion starting point 11C side. The apex A1 to A4 of the outer peripheral end projections 12a to 12d of the outer peripheral end of the base layer 12 on the adhesion start point 12C side. As described above, the base material layer preferably has a convex portion at the outer peripheral end on the adhesion start side, and the outer peripheral end of the base layer on the adhesion start side is the apex of the convex portion. In this case, when the release layer 2 is peeled off, the convex portion on the adhesion start side of the base material layer serves as a peeling starting point, so that peeling can be easily performed, and when the semiconductor wafer with the adhesive layer is obtained, the precision can be further improved. The layer of the adhesive is diced.

The base material layer 11 includes a plurality of convex portions 11a to 11d at the outer peripheral end of the adhesion starting point 11C side, and the convex portion 11b and the convex portion 1tc are connected by a curved line. The base material layer 12 includes a plurality of convex portions 12a to 12d at the outer peripheral end of the adhesion start point 12C side, and the plurality of convex portions 12a to 12d are connected by a curved line. As described above, the base material layer preferably has a plurality of convex portions at the outer peripheral end of the adhesion starting point side, and the plurality of convex portions are connected by a curve. In this case, when the release layer 2 is peeled off, it becomes a peeling origin, and peeling can be easily performed. When the semiconductor wafer with an adhesive layer is obtained, the adhesive layer can be further diced with higher precision.

Further, in the base material layers 4, 11, and 12, the internal angles of the adhesion starting points 4C, 11C, and 12C and the portions other than the adhesion starting points 4C, 11C, and 12C are 180 degrees or less. That is, at the base end portions of the adhesion starting points 4C, 11C, and 12C, the adhesion starting points 4C, 11C, and 12C are connected to the portions other than the adhesion starting points 4C, 11C, and 12C so that the internal angle is 180 degrees or less. As described above, when the internal angle is 180 degrees or less, the base end of the adhesion starting point can be prevented from being cut off. When the internal angle exceeds 180 degrees, the base layer is likely to be cut at the base end of the adhesion starting point.

In the dicing-bonding ribbon 1 shown in Fig. 1, only one adhesion starting point 4C is provided on one base material layer 4. The adhesion starting point 4C is provided on one end side of the longitudinal direction of the elongated release layer 2. A modification of the dicing-mulet zone is shown in FIG. The number of etched-bonded ribbons 1 shown in FIG. 1 and the number of adhesion starting points on the base layer of the diced-bonded ribbon 51 shown in FIG. 15 are different from each other, and the dicing layer is also different. The adhesion starting point 4C of the dicing-bonding ribbon 1 is the same as the adhesion starting point 52C of the substrate layer 52 provided on the dicing-bonding ribbon 51. The base material layer 52 disposed on the dicing-bonding ribbon 51 has the same shape as the dicing layer 53. Further, in FIG. 15, the base material layer 52 is covered by the crystal cutting layer 53.

In the dicing-bonding ribbon 51 shown in Fig. 15, two adhesion starting points 52C are provided on one base material layer 52. The adhesion starting point 52C is provided on one end side in the longitudinal direction of the elongated release layer 2 and on the other end side opposite to the one end side. As described above, it is preferable to provide a plurality of adhesion starting points on one substrate layer, and it is preferable to provide at least two adhesion starting points. In the case where a plurality of adhesion starting points are provided on one base material layer, it is preferable to provide an adhesion starting point on one end side of the base material layer and the other end side opposite to the one end side. In this case, the directionality of the diced-bonded ribbon can be eliminated. Further, for example, when the base material layer is not adhered preferably from the adhesion starting point on the one end side, the base material layer can be adhered from the adhesion starting point on the other end side. More specifically, in the case where the base material layer is not preferably adhered from the adhesion start point on the one end side, the long strip-shaped cleavage-adhesive ribbon is temporarily wound up and then wound up again, and The adhesion starting point on one end side adheres to the substrate layer.

(Method of manufacturing a semiconductor wafer with an adhesive layer)

Next, described below with reference to FIG 1 (a), (b) and FIG cutting the crystal shown in FIG. 2 _- example of a method of manufacturing a semiconductor wafer the adhesive layer of the die-incidental with the case when the 1.

First, the dicing-bonded ribbon 1, and the laminated body 21 are included.

As shown in FIG. 5(d), the laminated body 21 includes a protective sheet 22 and a divided semiconductor wafer 23 laminated on one surface 22a of the protective sheet 22. The divided semiconductor wafer 23 is divided into individual semiconductor wafers. The planar shape of the semiconductor wafer 23 after the division is circular.

The laminate 21 can be obtained in the following manner via the respective steps shown in Figs. 5(a) to (d).

First, as shown in FIG. 5(a), a semiconductor wafer 23A is prepared. The semiconductor wafer 23A is a semiconductor wafer before division. The planar shape of the semiconductor wafer 23A is circular. On the surface 23a of the semiconductor wafer 23A, circuits for forming the respective semiconductor wafers are formed in respective regions which are divided into a matrix by a street.

As shown in FIG. 5(b), the prepared semiconductor wafer 23A is diced from the surface 23a side. After the dicing, the semiconductor wafer 23A is not cut. A slit 23c for dividing into individual semiconductor wafers is formed on the surface 23a of the semiconductor wafer 23A. The dicing system is performed, for example, using a dicing apparatus including a blade that rotates at a high speed.

Next, as shown in FIG. 5(c), the protective sheet 22 is adhered to the surface 23a of the semiconductor wafer 23A. Thereafter, the back surface 23b of the semiconductor wafer 23A is polished to reduce the thickness of the semiconductor wafer 23A. Here, the back surface 23b of the semiconductor wafer 23A is polished to the portion of the slit 23c. In this manner, the laminated body 21 shown in Fig. 5(d) can be obtained.

The back surface 23b of the semiconductor wafer 23A is preferably polished to the portion of the slit 23c. The polishing is performed using a grinder including a grinder such as a grinding magnet. At the time of polishing, the protective sheet 22 is adhered to the surface 23a of the semiconductor wafer 23A, so that no abrasive grains adhere to the circuit. Further, even after the semiconductor wafer 23A is divided into individual semiconductor wafers after the polishing, the plurality of semiconductor wafers are not cluttered and adhere to the protective sheet 22.

After the laminated body 21 is obtained, as shown in FIG. 6(a), the laminated body 21 is mounted on the stage 25 from the side of the protective sheet 22. On the stage 25, an annular ring-shaped ring 26 is provided at a position spaced apart from each other by the outer circumferential side of the semiconductor wafer 23 after the division. The release layer 2 of the dicing-adhesive tape 1 is peeled off, or after the release layer 2 is peeled off, the other surface 3b of the exposed adhesive layer 3 is adhered to the back surface 23b of the divided semiconductor wafer 23. Further, the outer peripheral portion of the exposed base material layer 4 is adhered to the dicing ring 26 from the adhesion starting point 4C.

In Fig. 8(a), a front cross-sectional view shows a state in which the base material layer 4 is adhered to the dicing ring 26, and in Fig. 8(b), the base material layer 4 is adhered to the dicing ring in plan view. The state after 26.

As shown in FIGS. 8( a ) and ( b ), generally, when the base material layer 4 is adhered to the dicing ring 26 , the base material layer 4 and the dicing layer 5 are self-released from the release layer 2 using the peeling edge 32 . The surface 2a is peeled off. The adhesion starting point 4C of the base material layer 4 is adhered to the dicing ring 26, and is pressed against the adhesion starting point 4C by the winding roller 31. Then, the adhesive layer 3, the base material layer 4, and the dicing layer 5 are stretched one by one to avoid wrinkles on the adhesive layer 3, the base material layer 4, and the dicing layer 5, and the outer peripheral portion of the base material layer 4 is adhered. In the cleavage ring 26. The shrinkage force acts on the base layer 4 and the dicing layer 5 adhered to the dicing ring 26.

When the shrinkage force is locally different, for example, after the base material layer is adhered to the dicing ring, or the protective wafer is peeled off from the semiconductor wafer after the division, the cut crystal line which is the cut portion of the semiconductor wafer after the division is easily bent.

In the diced-bonded ribbon 1, the length L (mm) is in the range of 0.30D to 0.44D (mm). That is, when the base layer 4 of the dicing-bonding ribbon 1 is adhered to the dicing ring, the base layer 4 is adhered to the dicing at a position 0.3W from the outer peripheral end of the adhesion starting point 4C side. The ring 26, nextly, adheres the outer peripheral portion of the base material layer 4 other than the adhesion starting point 4C to the dicing ring 26. In other words, at the beginning of adhesion, the length L (mm) of the portion of the substrate layer 4 adhered to the dicing ring 26 is in the range of 0.30D to 0.44D (mm). Therefore, the shrinkage force of the base material layer 4 adhered to the dicing ring 26 and the adhesive layer 3 and the dicing layer 5 laminated on the base material layer 4 is hardly locally different.

Therefore, after the base material layer 4 is adhered to the dicing ring 26 or the protective sheet 22 is peeled off from the divided semiconductor wafer 23 adhered to the adhesive layer 3, the dicing line of the semiconductor wafer 23 after the division is difficult to bend. Therefore, the adhesive layer 3 can be crystallized with high precision. Further, the pick-up property of the semiconductor wafer with the adhesive layer 3 can be improved.

After the base material layer 4 is adhered to the dicing ring 26, as shown in FIG. 6(b), the divided semiconductor wafer 23 to which the adhesive layer 3 is adhered is taken out from the stage 25 and turned over. At this time, the dicing ring 26 is adhered to the adhesive portion 4B of the base material layer 4 in a state of being taken out. The taken-out semiconductor wafer 23 is inverted so that the surface 23a is placed upward and mounted on the other stage 27.

Next, as shown in FIG. 7(a), the protective sheet 22 is peeled off from the surface 23a of the semiconductor wafer 23 after the division. When the protective sheet 22 is peeled off, the protective sheet 22 may be heated in order to facilitate peeling.

Next, as shown in FIG. 7(b), the adhesive layer 3 is diced along the slit 23c (cut portion) of the divided semiconductor wafer 23, that is, along the dicing line. The adhesive layer 3 is diced in such a manner as to penetrate the both sides, and is divided into the sizes of the respective semiconductor wafers. After the dicing, the cut portion 3d is formed in the adhesive layer 3. When the dicing-adhesive tape 1 is used, a non-adhesive non-adhesive portion 4A is provided under the portion of the adhesive layer 3 to which the divided semiconductor wafer 23 is adhered, so that the cutting can be performed with high precision. crystal. Therefore, after dicing, the pick-up property of the semiconductor wafer with the adhesive layer can be improved.

The dicing system is not particularly limited as long as it is carried through the adhesive layer 3 . As a method of dicing the adhesive layer 3, the method of using a crystal cutting blade, the method of laser-cutting, etc. are mentioned. In the case of using the divided semiconductor wafer 23, a laser dicing method is generally used.

When the non-adhesive portion 4A of the base material layer 4 is hardened, for example, the non-adhesive portion 4A is difficult to react by irradiation of laser light. Therefore, it is difficult for the base material layer 4 to be fused to the adhesive layer 3. Therefore, even when the dicing using the laser light has been performed, the pickup of the semiconductor wafer can be easily performed.

After the semiconductor wafer is diced and divided into individual semiconductor wafers, the dicing layer 5 is stretched to expand the interval between the divided semiconductor wafers. Thereafter, the semiconductor wafer and the adhesive layer 3 are peeled off from the base material layer 4 and taken out. In this manner, a semiconductor wafer with an adhesive layer 3 can be obtained.

Further, it is preferable to take out the semiconductor wafer after the dicing, without changing the peeling force between the adhesive layer 3 and the non-adhesive portion 4A. The non-adhesive portion 4A of the base material layer 4 adhered to the adhesive layer 3 has non-adhesive properties. Therefore, after the dicing, the semiconductor wafer with the adhesive layer 3 can be easily taken out without changing the peeling force.

Next, another example of a method of manufacturing a semiconductor wafer using the adhesive layer of the dicing-bonding ribbon 1 shown in Figs. 9(a) and (b) will be described below.

First, the above-described diced-bonded ribbon 1 and semiconductor wafer 41 are prepared. The planar shape of the semiconductor wafer 41 is circular. The semiconductor wafer 41 is not divided into individual semiconductor wafers.

As shown in FIG. 9(a), the semiconductor wafer 41 is turned over, and the inverted semiconductor wafer 41 is mounted on the stage 25 from the surface 41a side. On the stage 25, an annular cleavage ring 26 is provided at a position spaced apart from the outer circumferential side of the semiconductor wafer 41 at a fixed interval. The release layer 2 of the dicing-bonding ribbon 1 is peeled off, or after the release layer 2 is peeled off, the other surface 3b of the exposed adhesive layer 3 is adhered to the back surface 41b of the semiconductor wafer 41. Further, the outer peripheral portion of the exposed base material layer 4 is adhered to the dicing ring 26 from the adhesion starting point 4C.

Next, as shown in FIG. 9(b), the semiconductor wafer 41 to which the adhesive layer 3 is adhered is taken out from the stage 25 and turned over. At this time, the dicing ring 26 is adhered to the adhesive portion 4B of the base material layer 4 in a state of being taken out. The taken-out semiconductor wafer 41 is turned over so that the surface 41a becomes upward and is mounted on the other stage 27. Next, the semiconductor wafer 41 is diced together with the adhesive layer 3, and is divided into individual semiconductor wafers. The semiconductor wafer 41 and the adhesive layer 3 are cut so as to penetrate both sides. After the dicing, the cut portion 41c is formed in the semiconductor wafer 41, the cut portion 3d is formed in the adhesive layer 3, and a slit is formed in the base material layer 4.

Next, the crystal cutting layer 5 is stretched, and the semiconductor wafer and the adhesive layer 3 are peeled off from the base material layer 4 and taken out, whereby the semiconductor wafer with the adhesive layer 3 can be obtained.

Hereinafter, the present invention will be specifically described by way of examples and comparative examples. The invention is not limited to the following examples.

(acrylic polymer 1)

95 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of 2-hydroxyethyl acrylate, and 0.2 parts by weight of Irgacure 651 as a photoradical generator (Ciba-Geigy) The company manufactured, 50% ethyl acetate solution, and 0.01 part by weight of dodecanol were dissolved in ethyl acetate to obtain a solution. The solution was irradiated with ultraviolet rays to carry out polymerization to obtain an ethyl acetate solution of the polymer. Further, 3.5 parts by weight of 2-methylpropenyloxyethyl isocyanate (manufactured by Showa Denko, Karenz MOI) was reacted with respect to 100 parts by weight of the solid content of the solution to obtain an acrylic copolymer (acrylic polymerization). Matter 1). The obtained acrylic polymer 1 had a weight average molecular weight of 700,000 and an acid value of 0.86 (mgKOH/g).

Further, as a material constituting the composition for forming the substrate layer, the following compounds were prepared.

(photopolymerization initiator)

Irgacure651 (manufactured by Ciba Japan)

(oligomer)

U324A: Manufactured by Xinzhongcun Chemical Industry Co., Ltd., acrylic urethane oligomer (10 functional acrylic urethane oligomer), weight average molecular weight: 1,300

(crosslinking agent)

Coronate L-45: manufactured by Japan Polyurethane Industry Co., Ltd., isocyanate crosslinking agent

(cut layer)

A polyethylene film as a crystal cut layer having a thickness of 100 μm was produced by a T-die method using polyethylene (manufactured by Prime Polymer Co., Ltd., M12) as a raw material.

(Example 1)

In the first embodiment, a diced-bonded ribbon and a substrate layer having the shapes shown in Figs. 1(a), (b) and 2 are formed.

(1) Production of the first laminate

To 100 parts by weight of the above acrylic polymer, 1 part by weight of Irgacure 651, 15 parts by weight of U324A as an urethane urethane oligomer, and 1 part by weight of Coronate L-45, an adhesive composition was obtained. The obtained adhesive composition was applied to a release PET (polyethylene terephthalate) film, dried at 110 ° C for 5 minutes, and the solvent was removed to form a composition layer.

The surface of the base material layer of the polyethylene film which is a layered layer is mirror-finished and corona-treated. A polyethylene film was adhered to the opposite side of the surface of the release PET film to which the composition layer was adhered. Thereafter, it was stored at 40 ° C for 24 hours.

Next, light was irradiated to the central region of the obtained composition layer by using a mercury lamp so as to have an energy of 2000 mJ/cm ^{2 to} harden the composition layer. In this manner, a base material layer (thickness: 20 μm) having a non-adhesive portion in the central portion and an adhesive portion in the region of the outer portion of the non-adhesive portion was obtained.

In the above manner, the first layered body in which the release PET film, the base material layer, and the crystal cut layer were laminated in this order was obtained.

(2) Production of the second laminate

15 parts by weight of G-2050M (manufactured by NOF Corporation, an epoxy group-containing acrylic polymer, weight average molecular weight Mw of 200,000), 70 parts by weight of EXA-7200HH (DIC (Di Ai Sheng) Co., Ltd., 2nd ring Pentadiene type epoxide), 15 parts by weight of HP-4032D (manufactured by DIC Corporation, naphthalene type epoxide), 38 parts by weight of YH-309 (manufactured by Mitsubishi Chemical Corporation, an acid anhydride type hardener), 8 parts by weight 2MAOK-PW (manufactured by Shikoku Chemical Co., Ltd., imidazole), 2 parts by weight of S320 (manufactured by Chisso Co., Ltd., amino decane), and 4 parts by weight of MT-10 (manufactured by Tokuyama Co., Ltd.) The surface is hydrophobized and smoked) to obtain a formulation. The obtained preparation was added to methyl ethyl ketone (MEK (methyl ethyl ketone)) as a solvent so as to have a solid content of 60% by weight, and stirred to obtain a coating liquid.

The obtained coating liquid was applied onto a release PET film to have a thickness of 10 μm, and dried by heating in a furnace at 110 ° C for 2 minutes.

Thereafter, the planar shape of the adhesive layer was processed to have a circular shape as shown in the following Table 1, and a second laminated body in which an adhesive layer was laminated on the release PET film was obtained.

(3) Fabrication of dicing-bonded ribbon

Next, the release PET film of the first laminate was peeled off to expose the substrate layer. The laminate of the base material layer and the dicing layer was laminated from the side of the base material layer to the adhesive layer at 60 ° C to obtain a laminate. Thereafter, the base material layer and the crystal cut layer were cut out so as to have the shapes shown in Figs. 1 (a), (b) and Fig. 2, that is, the sizes shown in Table 1 below. In this manner, a diced-bonded ribbon having a four-layered laminated structure in which a release PET film/adhesive layer/substrate layer/cut layer was sequentially laminated was prepared.

In the obtained diced-bonded ribbon, there is a region where the non-adhesive portion is larger than the adhesive layer and the non-adhesive portion protrudes more laterally than the outer peripheral side of the adhesive layer.

(Examples 2 to 4)

In Examples 2 to 4, a diced-bonded ribbon and a substrate layer having the shapes shown in Figs. 1(a), (b) and 2 were formed. A diced-bonded ribbon was produced in the same manner as in Example 1 except that the dimensions of the base layer and the diced layer were changed as shown in Table 1 below. Further, in FIG. 2, the front end of the adhesion starting point 4C does not protrude from the front end in the direction of adhesion of the imaginary line (a little chain line) when the planar shape of the entire base layer 4 is assumed to be circular. However, in the embodiment 4, the front end of the adhesion starting point 4C protrudes from the front end in the adhesion direction of the virtual line toward the adhesion direction.

(Examples 5 to 6)

In the second to sixth embodiments, the shape of the base material layer and the crystal cutting layer was changed to the shape shown in FIG. 3, that is, the size shown in Table 2 below, and the crystal was produced in the same manner as in Example 1. - A sticky layer. Further, in FIG. 3, the front end of the adhesion starting point 11C does not protrude from the front end in the direction of adhesion of the virtual line (a little chain line) when the planar shape of the entire base layer 11 is assumed to be circular, However, in the embodiment 6, the front end of the adhesion starting point 11C protrudes from the front end in the adhesion direction of the virtual line toward the adhesion direction.

(Example 7)

In the seventh embodiment, except that the shape and size of the base layer and the dicing layer were changed to the shapes shown in FIG. 4, that is, the sizes shown in Table 3 below, the dicing-adhesion was produced in the same manner as in Example 1. Crystal ribbon.

(Comparative examples 1 to 5)

In Comparative Examples 1 to 5, the shape and size of the base layer and the dicing layer were changed to any of the shapes shown in Tables 4 to 14 shown in Table 4 below, that is, the dimensions shown in Table 4 below. A diced-bonded ribbon was produced in the same manner as in Example 1.

In Comparative Examples 1, 2, 4, and 5, the planar shape of the base material layer was substantially circular, and the planar shape of the base material layer excluding the adhesion starting portion was a part of a circle. In FIGS. 10 to 11 and 13 to 14, the virtual line when the planar shape of the entire base material layers 101 to 102 and 104 to 105 is assumed to be circular is indicated by a one-dot chain line. In Comparative Example 3, the planar shape of the base material layer 103 was circular.

(Evaluation)

The surface of a 300 mm (12 inch) diameter semiconductor wafer (矽 wafer, thickness 80 μm) was cut into a depth of 100 μm. Next, a backside polishing tape Icross SB135S-BN (manufactured by Mitsui Chemicals, Inc., coated with an acrylic adhesive on one side of the olefin) as a protective sheet was laminated on the surface of the semiconductor wafer from the acrylic adhesive side. Next, the back surface of the semiconductor wafer is polished until the thickness of the semiconductor wafer is 35 μm, and then the slurry is polished using CMP (Chemical Mechanical Polishing) to polish the back surface of the semiconductor wafer until the thickness of the semiconductor wafer. It is 30 μm. In this manner, a laminate of the protective sheet and the divided semiconductor wafer is obtained.

Next, a wafer mounter DAM-812M (manufactured by Takatori Co., Ltd.) was used to adhere the die-cutting film to the back surface of the divided semiconductor wafer and the dicing ring (outer diameter 400 mm, inner diameter 350). Mm). Further, the stage of the semiconductor wafer after the division of the laminated body was set to 60 °C.

Next, the divided semiconductor wafer to which the adhesive layer is adhered is taken out from the platform and turned over, and loaded onto another platform. Thereafter, the protective sheet was peeled off from the surface of the semiconductor wafer after division at 60 °C.

Secondly, using the crystal cutting device DFL7160 (manufactured by Disco), the laser output is 0.5 W, the frequency is 50 kHz, the transmission speed is 100 mm/sec, the defocus amount is -0.05 mm, and the focus position is the surface of the adhesive layer. The adhesive layer is diced to the size of each semiconductor wafer. After dicing, a die bonder Bextem D-02 (manufactured by Canon Machinery Co., Ltd.) was used to continuously pick up the chuck with a size of 8 mm square, an ejection speed of 5 mm/sec, and a pick-up temperature of 23 °C. 20 semiconductor wafers with an adhesive layer.

In the manufacture of the semiconductor wafer with the above adhesive layer, the evaluation items of the following (1) to (4) were evaluated.

(1) Prominence

Based on the following criteria, the protrusion of the outer peripheral portion of the base material layer from the adhesion starting point to the dicing ring was determined.

[Judging criteria for prominence]

○: The substrate layer can be adhered to the dicing ring without any problem

×: There is a case where the adhesion starting point of the substrate layer cannot be adhered to the dicing ring

(2) Whether the substrate layer after adhesion is cut or deformed

Based on the following criteria, it is determined whether or not the substrate layer adhered to the semiconductor wafer after the division is cut or deformed.

[Criteria for determining whether or not the substrate layer is adhered or deformed after adhesion]

○: After the adhesion, the substrate layer is not cut or deformed

△: After the adhesion, the substrate layer is not cut but stretched

×: After the adhesion, the substrate layer is cut off

(3) Exposure of the substrate layer

The exposure of the base material layer when the outer peripheral portion of the base material layer adhered to the dicing ring from the adhesion starting point was determined based on the following criteria.

[Criteria for judging the exposure of the substrate layer after adhesion]

○: After adhesion, the substrate layer is not exposed from the cleavage ring

×: After adhesion, the substrate layer is exposed from the dicing ring

(4) Ridge displacement

After the protective sheet was peeled off, the cut portion of the semiconductor wafer after the division was observed, and the ridge displacement was determined based on the following criteria.

[Determination of ridge line displacement]

○: the alignment of the plurality of semiconductor wafers is not abnormal, and on the extension line of the cut portion between the two semiconductor wafers, there is no part of the cut portion between the two semiconductor wafers adjacent to the two semiconductor wafers

×: There is an abnormality in the alignment of the plurality of semiconductor wafers, and there is no portion of the cut portion between the two semiconductor wafers adjacent to the cut portion of the two semiconductor wafers.

(5) Pickup

The pick-up property of the semiconductor wafer with the adhesive layer was determined based on the following criteria.

[Criteria for picking up]

○: There are no semiconductor wafers that cannot be picked up.

×: There are semiconductor wafers that cannot be picked up.

Moreover, the main cause of the pickup failure is the tilt of the semiconductor wafer caused by the abnormality of the ridge line (the alignment of the semiconductor wafer is abnormal), which is caused by insufficient recognition of the semiconductor wafer.

The results are shown in Table 5 below.

1, 51. . . Cleavage-adhesive zone

2. . . Release layer

2a. . . Upper surface

3. . . Adhesive layer

3a, 22a. . . one side

3b. . . the other side

3c. . . Peripheral side

3d, 41c. . . Cut off part

4, 11, 12, 52, 101, 102, 103, 104, 105. . . Substrate layer

4A, 11A, 12A. . . Non-adhesive part

4B, 11B, 12B. . . Adhesive part

4C, 11C, 12C, 52C. . . Sticking to the starting point

4a~4c, 11a~11d, 12a~12d. . . Convex

5,53. . . Crystal layer

twenty one. . . Laminated body

twenty two. . . Protective sheet

twenty three. . . Divided semiconductor wafer

23A, 41. . . Semiconductor wafer

23a, 41a. . . surface

23b, 41b. . . back

23c. . . incision

25, 27. . . platform

26. . . Cleavage ring

31. . . Roll

32. . . Stripping edge

A1, A2, A3, A4, B1, B2. . . vertex

A11. . . The deepest portion of the intersection between the intersection, the convex portion 11b and the convex portion 11c, and the deepest portion of the concave portion between the convex portion 12a and the convex portion 12b

A12. . . The deepest part of the recess between the convex portion 12b and the convex portion 12c

A13. . . The deepest part of the recess between the convex portion 12c and the convex portion 12d

A21, A22, A23, A24. . . intersection

C1, C2. . . contact

I-I. . . line

D. . . Outer diameter

L. . . length

W. . . width

1(a) and 1(b) are schematic partial cross-sectional plan views and a partial front cross-sectional view of a diced-adhesive tape according to an embodiment of the present invention;

Figure 2 is a partial plan view showing the substrate layer of the diced-bonded ribbon shown in Figure 1 in a schematic manner;

3 is a partial lack plan view schematically showing a modification of the base layer of the diced-adhesive tape;

4 is a partial missing plan view schematically showing another modification of the base layer of the diced-adhesive tape;

5(a) to 5(d) are partially broken front cross-sectional views for explaining an example of each step of obtaining a laminate used in the production of a semiconductor wafer with an adhesive layer;

6(a) to 6(b) are partially broken front cross-sectional views for explaining an example of a method of manufacturing a semiconductor wafer with an adhesive layer using a diced-bonded ribbon according to an embodiment of the present invention;

7(a) to 7(b) are partially fragmentary front cross-sectional views showing an example of a method of manufacturing a semiconductor wafer with an adhesive layer using a diced-bonded ribbon according to an embodiment of the present invention;

Fig. 8(a) is a front cross-sectional view showing a state in which a dicing-adhesive tape is adhered to a dicing ring, and Fig. 8(b) is a view showing a state in which a dicing-adhesive tape is adhered to a dicing ring. Floor plan

9(a) and 9(b) are partially fragmentary front cross-sectional views for explaining another method of manufacturing a semiconductor wafer with an adhesive layer using a diced-bonded ribbon according to an embodiment of the present invention;

Figure 10 is a partially broken plan view schematically showing the shape of the substrate layer of Comparative Example 1;

Figure 11 is a partially broken plan view schematically showing the shape of the substrate layer of Comparative Example 2;

Figure 12 is a partially broken plan view schematically showing the shape of the substrate layer of Comparative Example 3;

Figure 13 is a partially broken plan view schematically showing the shape of the substrate layer of Comparative Example 4;

Figure 14 is a partially broken plan view schematically showing the shape of the substrate layer of Comparative Example 5;

Fig. 15 is a partially broken plan view schematically showing a modification of the diced-bonded ribbon shown in Fig. 1.

1. . . Cleavage-adhesive zone

2. . . Release layer

2a. . . Upper surface

3. . . Adhesive layer

3a. . . one side

3b. . . the other side

3c. . . Peripheral side

4. . . Substrate layer

4A. . . Non-adhesive part

4B. . . Adhesive part

4C. . . Sticking to the starting point

4a~4c. . . Convex

5. . . Crystal layer

26. . . Cleavage ring

31. . . Roll

32. . . Stripping edge

D. . . Outer diameter

L. . . length

W. . . width

Claims (7)

A dicing-bonded ribbon comprising: an adhesive layer; and a substrate layer laminated on one side of the adhesive layer; and in the case of dicing, a dicing ring is adhered to a peripheral portion of the substrate layer, The base material layer has an adhesion starting point adhered to the dicing ring at the beginning of adhesion at the outer peripheral portion; and a width of a portion of the substrate layer excluding the adhesion starting point adhered to the dicing ring is set to W (mm) When the outer diameter of the portion of the base material layer other than the adhesion starting point is D (mm), the distance from the outer peripheral end of the base material layer to the inner side of the adhesion starting point side is 0.3 W. The length L (mm) of the above-mentioned adhesion starting point is in the range of 0.30D to 0.44D (mm). The dicing-bonded ribbon of claim 1, wherein a curvature of the outer peripheral end of the adhesion starting point side of the substrate layer is greater than a curvature of a peripheral end of the substrate layer other than the adhesion starting point. The dicing-adhesive tape of claim 1 or 2, wherein the base material layer includes a convex portion at an outer peripheral end of the adhesion start point side; and an outer peripheral end of the base material layer on the adhesion start side is an apex of the convex portion. The dicing-bonded ribbon of claim 1, wherein the substrate layer comprises a plurality of convex portions at a peripheral end of the adhesion starting point side, and the plurality of convex portions are connected by a curve. A method of manufacturing a semiconductor wafer with an adhesive layer, comprising the steps of: using a dicing-bonding ribbon according to any one of claims 1 to 4, and comprising a protective sheet and laminating one side of the protective sheet and dividing a layered body of the divided semiconductor wafers of the respective semiconductor wafers, the adhesion layer of the diced-bonded ribbon is adhered to the divided semiconductor wafer of the laminate; and the adhesion starting point of the substrate layer is adhered a ring-shaped dicing ring, and secondly, a peripheral portion of the substrate layer excluding the adhesion starting point is adhered to the dicing ring; the protective film is peeled off from the divided semiconductor wafer; and the semiconductor wafer is separated along the segment The cut portion is diced to the adhesive layer; and after the dicing, the adhesive layer of the semiconductor wafer is peeled off from the base material layer, and the semiconductor wafer is taken out together with the adhesive layer. The method for fabricating a semiconductor wafer with an adhesive layer according to claim 5, further comprising the steps of: forming a slit for dividing the semiconductor wafer into individual semiconductor wafers on a surface of the semiconductor wafer; The surface of the semiconductor wafer is adhered to the protective sheet; and the back surface of the semiconductor wafer to which the protective sheet is adhered is polished, and the semiconductor wafer is divided into individual semiconductor wafers to obtain the laminated body. A method of manufacturing a semiconductor wafer with an adhesive layer, comprising the steps of: using the diced-bonded ribbon and the semiconductor wafer according to any one of claims 1 to 4, Adhesive layer is adhered to the semiconductor wafer; the adhesion starting point of the substrate layer is adhered to the annular dicing ring, and then the outer peripheral portion of the substrate layer except the adhesion starting point is adhered to the cleavage ring The semiconductor wafer and the adhesive layer are diced, and after the dicing, the adhesive layer of the semiconductor wafer is peeled off from the substrate layer, and the semiconductor wafer is taken out together with the adhesive layer.