TW201518467A - Dicing/die-bonding tape and method for manufacturing semiconductor chip provided with adhesive layer - Google Patents

Abstract

Provided is a dicing/die-bonding tape wherein peeling is smoothly performed at a peeling start point of a dicing layer at the time of obtaining a semiconductor chip that is provided with an adhesive layer. A dicing/die-bonding tape (1) relating to the present invention is provided with an adhesive layer (3), and a dicing layer (5), which is disposed on the one surface (3a) side of the adhesive layer (3), and which has a region protruding further toward the sides than the outer circumferential side surface of the adhesive layer (3), and at the time of performing dicing, a dicing ring is bonded to an outer circumferential portion of the dicing layer (5). The dicing layer (5) has, in an outer circumferential portion thereof, a bonding start point (5C) that is to be bonded to the dicing ring when starting the bonding, and the bonding start point (5C) of the dicing layer (5) is compressed in the thickness direction of the dicing layer (5).

Description

Method for manufacturing semiconductor wafer with dicing-bonding ribbon and adhesive layer

The present invention relates to a diced-bonded ribbon for use in obtaining a semiconductor wafer with an adhesive layer and for bonding a semiconductor wafer with an adhesive layer. Further, the present invention relates to a method of manufacturing a semiconductor wafer using an adhesive layer of the above-described diced-bonded ribbon.

Previously, in order to obtain a semiconductor wafer from a semiconductor wafer, a dicing tape was used. Further, in order to bond a semiconductor wafer to a substrate or the like, a dicing tape having an adhesive layer as a die layer is used. The dicing tape having the adhesive layer is referred to as a diced-bonded ribbon.

An example of the above-described dicing-bonding ribbon is disclosed in Patent Document 1 below. Patent Document 1 discloses, in particular, a subsequent sheet (cut-bonded-bonded ribbon) in which a release substrate, an adhesive layer (adhesive layer), an adhesive layer, and a base film (cut layer) are sequentially laminated. ). The outer periphery of the adhesive layer is attached to the release substrate. The adhesive layer is partially formed on the release substrate and has a specific first planar shape. In the peeling base material, a first notch portion is formed on a surface of the first planar shape from a side in contact with the adhesive layer. The breaking strength of the first notched portion of the release base material is 25 N or more and 100 N or less.

In the following Patent Document 2, there is disclosed a cleavable crystal-clear integrated tape (cut-grain-adhesive tape) in which a die-bonding material (adhesive layer) is laminated on a release sheet, and the die-bonded layer is coated The material is formed on the release sheet and the bonded crystal material by a dicing tape (cut layer). In order to easily peel the dicing tape from the release sheet, a projection is provided on the periphery of the dicing tape.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-144313

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2005-116790

When the dicing-bonded ribbon described in Patent Document 1 is used to obtain a semiconductor wafer with an adhesive layer, the outer peripheral portion of the adhesive layer (the adhesive layer) and the adhesive layer (one of the dicing layers) is self-disposed to the above. The notched portion of the release substrate is exposed. When a semiconductor wafer with a bonded crystal material is obtained by using the dicing-bonded crystal ribbon described in Patent Document 2, the protruding portion of the dicing tape (cut layer) is used as a peeling starting point, and the bonded crystal layer (adhesive layer) is The dicing tape is peeled off from the release sheet to expose the periphery of the die bond and the dicing tape.

When such a prior cleavage-bonding ribbon is used, in the following step, the exposed die layer is attached to the divided semiconductor wafer or the pre-divided semiconductor wafer, and the exposed dicing layer is exposed. The peripheral portion is attached to the cleavage ring. Next, when a protective sheet is attached to the surface of the semiconductor wafer after division, the protective sheet is peeled off. Thereafter, the die layer is diced along the cut portion of the divided semiconductor wafer, or the semiconductor wafer and the die layer before dicing are diced. After the dicing, the semiconductor wafer of the adhesion layer is taken out by peeling it off. The semiconductor wafer from which the adhesive layer is removed is mounted on the substrate from the side of the adhesive layer.

In the dicing-bonding ribbon described in Patent Documents 1 and 2, when the outer peripheral portion of the die-bonding layer and the crystal cutting layer are exposed, the peeling starting point is not smoothly peeled off, and the dicing-bonding crystal band is present. The case where it is attached to the dicing ring in a state where the deformation occurs locally.

In this case, after the dicing layer is attached to the dicing ring, generally, the contraction force of the tensile stress at the time of attaching is moderated to the dicing layer, and the contraction force of the dicing layer is locally different. . Therefore, there is a case where the dicing line is bent as a cut portion of the divided semiconductor wafer (referred to as a phenomenon of kerf shift). Therefore, there will be no way to make the bonding layer with good precision. The dicing is performed, or the wafers which are not uniformly spread between the wafers and the semiconductor wafer having the viscous layer are low in pick-up property.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for fabricating a dicing-bonded ribbon, and a bonded wafer layer using the etched-adhesive strip, which is bonded The semiconductor wafer of the agent layer can be smoothly peeled off at the peeling starting point of the crystal cutting layer.

According to a broad aspect of the present invention, there is provided a dicing-bonded ribbon comprising: an adhesive layer; and a dicing layer disposed on a surface side of the adhesive layer and having a adhesion a region in which the outer peripheral side of the agent layer protrudes more laterally; and when the crystal is diced, a dicing ring is attached to the outer peripheral portion of the dicing layer, and a peripheral portion of the dicing layer has a affixing when the affixing starts Attached to the attachment starting point of the dicing ring, the above-mentioned attachment starting point of the dicing layer is compressed in the thickness direction of the dicing layer.

In a specific aspect of the dicing-bonded ribbon of the present invention, the average thickness of the dicing layer at the attachment starting point is thinner than the average of the dicing layer except for the attachment starting point. thickness.

In a specific aspect of the dicing-mulet zone of the present invention, the surface of the dicing layer having the attachment starting point has a concave portion or a convex portion.

In a specific aspect of the dicing-bonding ribbon of the present invention, the concave portion or the convex portion is in a direction connecting the attachment starting point of the crystal cutting layer and the end opposite to the attachment starting point. extend.

In a particular aspect of the diced-bonded ribbon of the present invention, the attachment starting point of the dicing layer is embossed.

In a specific aspect of the dicing-bonding ribbon of the present invention, the dicing-bonding ribbon further includes a substrate layer, and the substrate is disposed between the adhesive layer and the dicing layer. a material layer, and the crystal cutting layer has a region protruding more laterally than a peripheral side surface of the substrate layer area.

In a specific aspect of the dicing-bonded ribbon of the present invention, the cleavage-bonding layer further includes a release layer, and the surface of the adhesive layer opposite to the side of the dicing layer is attached The surface of the mold release layer is attached to the mold release layer, and a surface of the crystal cut layer that protrudes laterally from the outer peripheral side surface of the adhesive layer is attached.

According to a broad aspect of the present invention, there is provided a method of fabricating a semiconductor wafer with an adhesive layer using the above-described diced-bonded ribbon, and a semiconductor wafer, and comprising the steps of: dicing said die-bonding The adhesive layer of the tape is attached to the semiconductor wafer; the origin of the dicing layer is attached to the dicing ring, and the peripheral portion of the dicing layer other than the splicing starting point is attached The dicing ring; dicing the semiconductor wafer and the adhesive layer; and, after dicing, stripping the adhesive layer to which the semiconductor wafer is attached, bonding the semiconductor wafer to the semiconductor wafer The layers are taken together.

Moreover, according to a broad aspect of the present invention, there is provided a method of fabricating a semiconductor wafer with an adhesive layer using the above-described diced-bonded ribbon, and having a protective sheet and laminated on one surface of the protective sheet And dividing into a laminated body of the divided semiconductor wafers of the respective semiconductor wafers, and comprising the steps of: attaching the adhesive layer of the dicing-bonding ribbon to the divided semiconductor wafer of the laminated body; Attaching the above-mentioned attachment starting point of the above-mentioned dicing layer to the dicing ring, and then attaching the outer peripheral portion of the dicing layer other than the above-mentioned affixing layer to the dicing ring; and separating the protective sheet from the above Stripping of the semiconductor wafer; dicing the adhesive layer along the cut portion of the divided semiconductor wafer; and, after dicing, stripping the adhesive layer to which the semiconductor wafer is attached, The semiconductor wafer is taken out together with the above adhesive layer.

In the method for producing a dicing-bonded ribbon according to the present invention, the peripheral portion of the dicing layer has an attachment starting point attached to the dicing ring at the start of attachment, and above the dicing layer Since the attachment start point is compressed in the thickness direction of the above-mentioned dicing layer, the detachment starting point can be smoothly peeled off from the above-mentioned attachment starting point of the dicing layer.

1‧‧‧Cutting-bonded ribbon

2‧‧‧ release layer

2a‧‧‧Upper surface

3‧‧‧ adhesive layer

3a‧‧‧ a surface

3b‧‧‧Other surface

3c‧‧‧ peripheral side

3d‧‧‧ cut off part

4‧‧‧Substrate layer

4a‧‧‧ a surface

4b‧‧‧Other surface

5‧‧‧Cutting layer

5A‧‧‧Substrate

5B‧‧‧Adhesive

5C‧‧‧ Attachment starting point

5x‧‧‧Extension

21‧‧‧Layer

22‧‧‧Protected sheet

22a‧‧‧ a surface

23‧‧‧Divided semiconductor wafer

23A‧‧‧Semiconductor Wafer

23a‧‧‧ positive

23b‧‧‧Back

23c‧‧‧ incision

25‧‧‧ platform

26‧‧‧Cut ring

27‧‧‧ platform

31‧‧‧ Roll

32‧‧‧ peeling edge

41‧‧‧Semiconductor wafer

41a‧‧‧ surface

41b‧‧‧Back

41c‧‧‧ cut off part

51‧‧‧Cutting-adhesive zone

52‧‧‧Cutting layer

52C‧‧‧ Attached starting point

61‧‧‧Cutting-adhesive zone

62‧‧‧Cutting layer

62C‧‧‧ Attached starting point

1(a) and 1(b) are a partially cutaway plan view and a partially cutaway front cross-sectional view schematically showing a diced-adhesive tape according to an embodiment of the present invention.

2(a) to 2(d) are partial cross-sectional front cross-sectional views for explaining an example of each step of obtaining a laminated body used for producing a semiconductor wafer with an adhesive layer.

3(a) and 3(b) are fragmentary front cross-sectional views showing an example of a method of manufacturing a semiconductor wafer with an adhesive layer using a dicing-bonding ribbon according to an embodiment of the present invention.

4(a) and 4(b) are fragmentary front cross-sectional views showing an example of a method of manufacturing a semiconductor wafer with an adhesive layer using a dicing-bonding ribbon according to an embodiment of the present invention.

Fig. 5(a) is a front cross-sectional view showing a state in which a dicing-adhesive tape is attached to a dicing ring, and Fig. 5(b) is a view showing a dicing-adhesive tape attached to a dicing ring. Top view of the state.

6(a) and 6(b) are partially cutaway front cross-sectional views showing another method of manufacturing a semiconductor wafer with an adhesive layer using a dicing-bonding ribbon according to an embodiment of the present invention.

7(a) and 7(b) are a partially cutaway plan view and a partial cutaway front cross-sectional view schematically showing a variation of the diced-adhesive tape shown in Fig. 1.

8(a) and 8(b) are a partially cutaway plan view and a partial cutaway front cross-sectional view schematically showing another variation of the diced-adhesive tape shown in Fig. 1.

Hereinafter, the present invention will be described with reference to the specific embodiments and examples of the present invention.

(Cut-bonded ribbon)

1(a) and 1(b) are diagrams schematically showing a diced-bonded ribbon according to an embodiment of the present invention. Fig. 1(a) is a partial cutaway plan view, and Fig. 1(b) is a partial cutaway front cross-sectional view taken along line I-I of Fig. 1(a). In addition, in FIG. 1 and the drawings which will be described later, the size and size are appropriately changed from the actual size and size for convenience of illustration.

As shown in FIGS. 1(a) and (b), the diced-bonded ribbon 1 has a strip-shaped release layer 2. On the upper surface 2a of the release layer 2, an adhesive layer 3, a substrate layer 4, and a dicing layer 5 are sequentially laminated. The crystal cutting layer 5 is disposed on the surface 3a (first surface) side of one of the adhesive layers 3. A substrate layer 4 is disposed between the adhesive layer 3 and the dicing layer 5 .

The base material layer 4 is laminated on one surface 3a (first surface) of the adhesive layer 3. A release layer 2 is laminated on the other surface 3b (second surface) of the adhesive layer 3. The adhesive layer 3 is laminated on the surface 4a (first surface) of the base material layer 4. The other layer 4b (second surface) on the side opposite to the side of the adhesive layer 3 of the base material layer 4 is laminated with a dicing layer 5.

The dicing layer 5 has a substrate 5A and an adhesive portion 5B. The adhesive portion 5B is laminated on one surface of the substrate 5A. The dicing layer 5 is laminated on the surface of the base material layer 4 from the side of the adhesive portion 5B.

The dicing-adhesive tape 1 is conveyed in a direction (flow direction) indicated by an arrow X shown in Fig. 1(a), and is subjected to a peeling and attaching step.

The release layer 2 is elongated. A plurality of laminated layers having the adhesive layer 3, the base material layer 4, and the crystal cut layer 5 are disposed on the upper surface 2a of the strip-shaped release layer 2, and the laminates are disposed at equal intervals. A protective sheet may be provided on the upper surface 2a of the release layer 2 on the side of the laminate.

The planar shape of the adhesive layer 3 and the substrate layer 4 is substantially circular. The planar shape of the crystal cut layer 5 is substantially circular. The diameter of the adhesive layer 3 may be the same as or different from the diameter of the substrate layer 4. The diameter of the substrate layer 4 is preferably larger than the diameter of the adhesive layer 3. The outer peripheral side surface of the base material layer 4 preferably protrudes more outward than the outer peripheral side surface of the adhesive layer 3, and preferably has a region which protrudes more laterally than the outer peripheral side surface of the adhesive layer 3. Further, it is preferable that the outer peripheral side surface of the base material layer 4 is not covered by the adhesive layer. If the size of the adhesive layer 3 and the substrate layer 4 In order to satisfy such a preferable relationship, when the semiconductor wafer is attached to the adhesive layer 3, the semiconductor wafer can be accurately aligned in the portion of the adhesive layer 3 in which the substrate layer 4 is laminated. Further, the semiconductor wafer can be more reliably attached to the adhesive layer 3.

The diameter of the dicing layer 5 is larger than the diameters of the adhesive layer 3 and the substrate layer 4. The outer peripheral side surface of the crystal cutting layer 5 protrudes outward more than the outer peripheral side surfaces of the adhesive layer 3 and the base material layer 4. Therefore, the crystal cutting layer 5 has a region which protrudes more laterally than the outer peripheral side surfaces of the adhesive layer 3 and the base material layer 4. By satisfying such a preferable relationship between the size of the crystal cutting layer 5 and the adhesive layer 3 and the substrate layer 4, when the semiconductor wafer is attached to the adhesive layer 3, it is also possible to adhere to the adhesive. The portion of layer 3 to which substrate layer 4 is attached positions the semiconductor wafer accurately. After the attachment, the substrate layer 4 can be reliably disposed on one surface 3a of the adhesive layer 3 to which the semiconductor wafer is attached. Therefore, by improving the releasability of the adhesive layer 3 from the base material layer 4, the semiconductor wafer to which the adhesive layer 3 is adhered can be easily peeled off from the base material layer 4 after the dicing. In particular, when the base material layer 4 is a non-adhesive non-adhesive layer, the semiconductor wafer with the adhesive layer 3 can be more easily peeled off from the base material layer 4. Therefore, the production loss can be reduced, thereby improving the yield. Further, since the dicing ring and the semiconductor wafer can be attached to different layers, the adhesive layer 3, the substrate layer 4, and the dicing layer 5 can be formed of the optimum material. Therefore, it is possible to improve machinability, pick-up property, and bonding reliability after bonding.

The dicing layer 5 has an extension portion 5x that protrudes outward from the outer peripheral side surface of the adhesive layer 3 and the base material layer 4. One side of the extended portion 5x of the dicing layer 5 is attached to the upper surface of the release layer 2 by the adhesive portion 5B. That is, the crystal cut layer 5 is attached to the upper surface of the release layer 2 in a region outside the outer peripheral side of the adhesive layer 3 and the base material layer 4.

The reason why the dicing layer 5 has the extension portion 5x is that when the semiconductor wafer is attached to the other surface of the adhesive layer 3, the dicing ring is attached to the outer side of the outer peripheral side of the adhesive layer 3 The adhesive portion 5B of the extension portion 5x.

In the dicing-adhesive ribbon 1, in the outer peripheral portion of the dicing layer 5, it has a sticker when the attachment starts. Attached to the etch ring is attached to the starting point 5C. In other words, the attachment starting point 5C is the peeling starting point. That is, at the time of attachment of the crystal cutting layer 5, peeling is performed from the attachment starting point 5C. Attachment starting point 5C attaches the beginning part and is the peeling start part. The attachment starting point 5C is formed at the end of the crystal cutting layer 5. When the semiconductor wafer with the adhesive layer is obtained, the outer peripheral portion of the dicing layer 5 is attached to the dicing ring from the attachment starting point 5C. The portion of the dicing layer 5 attached to the dicing ring is an adhesive portion 5B having adhesiveness.

The attachment starting point 5C of the dicing layer 5 is compressed in the thickness direction of the dicing layer 5. In this way, since the bonding starting point 5C of the dicing layer 5 is compressed in the thickness direction of the dicing layer 5, the bonding starting point 5C of the dicing layer 5 becomes the starting point of the dicing layer, and the dicing layer 5 can be smoothly peeled off. . Therefore, it is easy to attach the attachment starting point 5C of the dicing layer 5 to the dicing ring, and secondly, attach the outer peripheral portion of the dicing layer 5 except the attachment starting point 5C to the dicing ring, thereby suppressing the dicing-adhesion The local deformation of the crystal ribbon 1 is attached to the dicing ring. Therefore, the dicing line after dicing is difficult to bend. Therefore, the pick-up property of the semiconductor wafer with the adhesive layer 3 can be improved.

In order to form the attachment starting point 5C, compression molding, embossing, or the like can be performed. From the viewpoint of further improving the peeling property at the attachment starting point, it is preferred that the starting point of the dicing layer is embossed. Preferably, the surface of the dicing layer opposite to the side of the substrate layer is embossed.

Compression molding, embossing, or the like may be performed after cutting the crystal cutting layer, or may be performed while cutting the crystal cutting layer.

By the above compression, the average thickness at the attachment starting point of the crystal cutting layer is preferably thinner than the average thickness of the portion of the dicing layer excluding the attachment starting point. From the viewpoint of further improving the peeling property at the attachment starting point, the ratio of the average thickness T1 at the attachment starting point of the dicing layer to the average thickness T2 at the portion other than the attachment starting point of the dicing layer (T1/) T2) is preferably 0.1 or more, more preferably 3/7 or more, more preferably 7/3 or less, still more preferably 1 or less, still more preferably less than 1. The above ratio (T1/T2) may be 0.99 or less, or may be 0.95 or less. The thickness T1 at the starting point of the dicing layer is the average thickness of the compressed portion.

By the above compression, the average thickness at the starting point of the dicing layer is preferably thinner than the cut. The thickness of the portion of the layer that is attached to the attachment starting point. The ratio of the average thickness T1 at the attachment start point of the dicing layer to the thickness T3 of the portion of the dicing layer connected to the attachment start point (T1/T3) from the viewpoint of further improving the peeling property at the attachment starting point. It is preferably 0.1 or more, more preferably 3/7 or more, and is preferably less than 1, more preferably 0.99 or less, still more preferably 0.95 or less.

From the viewpoint of further improving the peeling property at the attachment starting point, the attachment starting point of the dicing layer preferably has a concave portion or a convex portion on the surface. The recess or the projection is preferably plural. The attachment starting point of the dicing layer preferably has a concave portion or a convex portion on the surface opposite to the side of the substrate layer. From the viewpoint of further improving the peeling property at the attachment starting point, the concave portion or the convex portion is preferably a direction in which the attachment starting point of the joining crystal layer and the end portion on the opposite side to the attachment starting point are connected (FIG. 1(a) It extends in the left and right direction and the MD direction. Preferably, the recess or the projection extends in the flow direction of the dicing die bond ribbon when attached. The concave portion or the convex portion may extend in a direction orthogonal to the direction of the attachment start point connecting the crystal cutting layer and the end portion on the side opposite to the attachment start point (upper and lower directions in FIG. 1(a), TD direction), and further It can also be extended in other directions. The recess or the projection preferably extends linearly. From the viewpoint of further improving the peeling property at the attachment starting point, it is preferable that the crystal cutting layer 5 has an MD direction and a TD direction, and the concave portion or the convex portion extends in the MD direction. The recess or protrusion may also extend in the TD direction.

The release layer is, for example, a release film. The release layer is used to protect the surface of the adhesive layer to which the semiconductor wafer is attached, and is provided in the form of a roll.

The material of the release layer may, for example, be a plastic resin, and specific examples thereof include a polyester resin such as polyethylene terephthalate resin, or a polytetrafluoroethylene resin, a polyethylene resin, a polypropylene resin, and a poly A polyolefin resin such as a methylpentene resin or a polyvinyl acetate resin.

The surface of the above release layer may also be subjected to mold release treatment. The release layer may be a single layer or a plurality of layers. In the case where the release layer is a plurality of layers, the layers may be formed of different resins.

In terms of further improving the rationality or peelability of the above release layer, the above The thickness of the release layer is preferably 10 μm or more, and preferably 100 μm or less.

The above adhesive layer is used for a layer of a die bond of a semiconductor wafer. The adhesive layer is used to bond a semiconductor wafer to a substrate or other semiconductor wafer or the like.

The adhesive layer is formed of, for example, a curable resin composition containing a curable compound such as a suitable curable resin, or a thermoplastic resin. Since the curable resin composition before curing is soft, it is easily deformed by an external force. After obtaining the semiconductor wafer with the adhesive layer described above, the obtained semiconductor wafer with the adhesive layer is laminated on the substrate or the like from the adhesive layer side. Thereafter, energy of heat or light is supplied to harden the adhesive layer, whereby the semiconductor wafer can be firmly bonded to the adherend via the adhesive layer.

In order to cure the above curable resin composition, a curing agent is used. Examples of the curing agent include a heat curing type acid anhydride type curing agent such as trialkyltetrahydrophthalic anhydride, a latent curing agent such as a phenol curing agent, an amine curing agent or dicyandiamide, and a cationic system. Catalyst type hardener, etc. In order to adjust the hardening speed, the physical properties of the cured product, and the like, the above-mentioned curing agent and curing accelerator may be used in combination.

The thickness of the above adhesive layer is not particularly limited. The thickness of the above adhesive layer is usually 5 μm or more and 150 μm or less. The thickness of the appropriate adhesive layer can be selected according to the design dimensions of the semiconductor device.

The substrate layer may be an adhesive layer having adhesiveness or a non-adhesive layer having non-adhesiveness (non-adhesiveness). The surface of the base material layer on the side of the adhesive layer is preferably non-adhesive. The surface of the base layer on the side of the dicing layer may also have non-adhesive properties. Further, the term "non-adhesiveness" means that not only the surface is not adhesive, but also the case where the finger is in contact with the surface and the adhesiveness is not close. Specifically, the term "non-adhesive" means that when the base material layer is attached to a stainless steel plate and the base material layer is peeled off at a peeling speed of 300 mm/min, the adhesive force is about 0.05 N/25 mm or less.

The base material layer is formed, for example, using a photopolymerizable compound. Specifically, the base material layer is formed using a composition containing a photopolymerizable compound.

Examples of the photopolymerizable compound include an acrylic polymer, an epoxy-modified acrylate, a urethane-modified acrylate, and a polyester-modified acrylate. The photopolymerizable compound is preferably an acrylic polymer from the viewpoint that the interface between the base layer and the dicing layer is more difficult to peel off and the semiconductor wafer with the adhesive layer is further improved. In view of the fact that the interface between the base material layer and the crystal cutting layer is more difficult to peel off and further improve the pick-up property of the semiconductor wafer with the adhesive layer, the base material layer is preferably made of the above acrylic polymer. The photopolymerizable compound is formed by crosslinking the acrylic polymer, and the material of the base material layer is preferably a crosslinked body obtained by crosslinking a composition containing an acrylic polymer. In this case, the polarity, storage modulus or elongation at break of the above substrate layer can be easily controlled and designed.

The acrylic polymer is not particularly limited. The acrylic polymer is preferably (meth)acrylic acid from the viewpoint that the interface between the base material layer and the crystal cutting layer is more difficult to peel off and further improves the pick-up property of the semiconductor wafer with the adhesive layer. Base ester polymer. The acrylic polymer preferably has a carbon number of 1 to 18 from the viewpoint that the interface between the base material layer and the crystal cutting layer is more difficult to peel off and further improves the pick-up property of the semiconductor wafer with the adhesive layer. Alkyl (meth) acrylate polymer. The (meth) acrylate polymer is a (meth) acrylate polymer having an alkyl group and having the above alkyl group having 1 to 18 carbon atoms. Further, by using an alkyl (meth)acrylate polymer having an alkyl group having 1 to 18 carbon atoms, the polarity of the base material layer is sufficiently lowered, the surface energy of the base material layer is lowered, and the viscosity is The peelability of the subsequent layer from the base material layer becomes high.

The above composition preferably contains a photoreaction initiator. As the photoreaction initiator, for example, a photoradical generator, a photocation generator, or the like can be used. An isocyanate crosslinking agent may also be added to the above composition to control the adhesion.

The thickness of the base material layer is not particularly limited. The thickness of the substrate layer is preferably 5 It is preferably μm or more, more preferably 10 μm or more, and is preferably 80 μm or less, more preferably 50 μm or less. When the thickness of the base material layer is at least the above lower limit, the elongation is further increased. When the thickness of the base material layer is less than or equal to the above upper limit, the thickness becomes more uniform, and the precision of the crystal cutting becomes higher. The thickness of the base material layer is particularly preferably 30 μm or more and 50 μm or less. When the thickness of the base material layer is 30 μm or more and 50 μm or less, the pick-up property of the semiconductor wafer with the adhesive layer is further improved.

Preferably, the crystal cutting layer has the substrate and the adhesive portion. The adhesive portion is preferably an adhesive layer.

The peeling force of the base material layer and the crystal cutting layer is preferably larger than the peeling force of the adhesive layer and the base material layer. It is preferable to constitute the above-mentioned adhesive portion so as to satisfy such peeling force.

The material of the above-mentioned base material in the above-mentioned dicing layer may, for example, be a plastic resin, and specific examples thereof include a polyester resin such as polyethylene terephthalate resin; or a polytetrafluoroethylene resin or a polyethylene resin; A polyolefin resin such as a polypropylene resin, a polymethylpentene resin or a polyvinyl acetate resin; or a polyvinyl chloride resin or the like. Among them, a polyolefin resin is preferably used because it has excellent elongation and a small environmental load. Further, in order to easily design the diced-bonded ribbon, a polyethylene resin is preferably used.

The above-mentioned adhesive portion is not particularly limited. Specific examples of the adhesive constituting the adhesive portion include an acrylic adhesive, a special synthetic rubber adhesive, a synthetic resin adhesive, and a rubber adhesive. Among them, a pressure-sensitive acrylic adhesive is preferred. When a pressure-sensitive acrylic adhesive is used, the dicing ring can be more easily peeled off from the above-mentioned adhesive portion. Further, the cost of the above-mentioned adhesive portion can be reduced.

The thickness of the above-mentioned crystal cutting layer is not particularly limited. The thickness of the crystal cut layer is preferably 52 μm or more, more preferably 82 μm or more, and is preferably 250 μm or less, and more preferably 210 μm or less.

The thickness of the above-mentioned base material in the above-mentioned crystal cutting layer is not particularly limited. In the above dicing layer The thickness of the substrate is preferably 50 μm or more, more preferably 80 μm or more, more preferably 200 μm or less, still more preferably 160 μm or less. When the total thickness of the substrate is not less than the above lower limit and not more than the above upper limit, the semiconductor wafer can be crystallized with better precision, and the pickup property can be further improved. Further, the release property of the release layer and the elongation of the crystal cut layer are further increased.

The thickness of the above-mentioned adhesive portion is not particularly limited. The thickness of the above-mentioned adhesive portion is preferably 2 μm or more, more preferably 5 μm or more, and is preferably 50 μm or less, and more preferably 30 μm or less. When the thickness of the adhesive portion is not less than the above lower limit and not more than the above upper limit, the peeling force of the base material layer and the dicing layer is easily controlled to an appropriate range.

In the diced-bonded ribbon 1 shown in FIG. 1, only one attachment starting point 5C is provided in one layer of the dicing layer 5. The attachment starting point 5C is provided on one end side in the longitudinal direction of the strip-shaped release layer 2. Fig. 7 (a) and (b) show examples of changes in the diced-bonded ribbon. With regard to the dicing-bonded ribbon 1 shown in FIG. 1 and the dicing-bonded ribbon 51 shown in FIGS. 7(a) and (b), the number and location of the attachment starting points in the dicing layer different.

In the dicing-bonding ribbon 51 shown in Figs. 7(a) and (b), two attachment starting points 52C are provided in one layer of the dicing layer 52. The attachment starting point 52C is provided on one end side in the longitudinal direction of the strip-shaped release layer 2 and on the other end side opposite to the one end side. Preferably, in this manner, a plurality of attachment starting points are provided on the one layer of the dicing layer, and preferably at least two attachment starting points are provided. In the case where a plurality of attachment starting points are provided in the one-layer dicing layer, it is preferable that an attachment starting point is provided on one end side of the dicing layer and the other end side opposite to the one end side. In this case, the directivity of the dicing-bonded ribbon can be eliminated. Further, for example, when the dicing layer cannot be smoothly attached from the attachment starting point on the one end side, the dicing layer can be attached from the attachment starting point on the other end side. More specifically, when the dicing layer is not attached smoothly from the attachment starting point on the one end side, the long dicing-bonding ribbon is temporarily wound up and then unwound again, whereby A dicing layer is attached to the attachment end of the other end side.

Further, in the dicing-bonding ribbon 1 shown in FIG. 1, the dicing layer 5 has a substrate 5A and adhesion. The multi-layer structure in which the portion 5B is laminated. Alternatively, a single-layered dicing layer 62 may be formed as in the dicing-bonding ribbon 61 shown in Figs. 8(a) and (b). In this case, it is preferred to form the crystal cut layer 62 by a material having adhesiveness. Further, the dicing layer 62 has an attachment starting point 62C similar to the attachment starting point 5C of the dicing layer 5.

(Method of manufacturing a semiconductor wafer with an adhesive layer)

Next, an example of a method of manufacturing a semiconductor wafer with an adhesive layer in the case of using the dicing-bonding ribbon 1 shown in Figs. 1(a) and 1(b) will be described below.

First, the dicing-bonding ribbon 1, and the laminated body 21 are prepared.

As shown in FIG. 2(d), the laminated body 21 has a protective sheet 22 and a divided semiconductor wafer 23 laminated on one surface 22a (first surface) of the protective sheet 22. The divided semiconductor wafer 23 is divided into individual semiconductor wafers. The planar shape of the semiconductor wafer 23 after the division is substantially circular.

The laminate 21 can be obtained in the following manner by the steps shown in Figs. 2(a) to (d).

First, as shown in FIG. 2(a), a semiconductor wafer 23A is prepared. The semiconductor wafer 23A is a semiconductor wafer before division. The planar shape of the semiconductor wafer 23A is circular. On the front surface 23a of the semiconductor wafer 23A, circuits which are formed by the dicing lines in a matrix form to form respective semiconductor wafers are formed.

As shown in FIG. 2(b), the prepared semiconductor wafer 23A is diced from the front surface 23a side. After the dicing, the semiconductor wafer 23A is not broken. A slit 23c for dividing into individual semiconductor wafers is formed on the front surface 23a of the semiconductor wafer 23A. The dicing is performed using, for example, a dicing apparatus having a blade that performs high-speed rotation.

Next, as shown in FIG. 2(c), a protective sheet 22 is attached to the front surface 23a of the semiconductor wafer 23A. Thereafter, the back surface 23b of the semiconductor wafer 23A is ground to reduce the thickness of the semiconductor wafer 23A. Here, the back surface 23b of the semiconductor wafer 23A is ground to the portion of the slit 23c. In this way, the laminated body 21 shown in Fig. 2(d) can be obtained.

The back surface 23b of the semiconductor wafer 23A is preferably ground to the portion of the slit 23c. Grinding For example, it is performed using a grinding machine such as a grinder having a grinding magnet or the like. At the time of grinding, the protective sheet 22 is attached to the front surface 23a of the semiconductor wafer 23A, so that the grinding debris does not adhere to the circuit. Further, even after the grinding, the semiconductor wafer 23A is divided into individual semiconductor wafers, and a plurality of semiconductor wafers are attached to the protective sheet 22 without being scattered.

After the laminated body 21 is obtained, as shown in FIG. 3(a), the laminated body 21 is placed on the stage 25 from the protective sheet 22 side. On the stage 25, an annular cleavage ring 26 is provided at a position spaced apart from the outer circumferential side of the semiconductor wafer 23 after division. The release layer 2 of the dicing-bonding ribbon 1 is peeled off, and the other surface 3b of the exposed adhesive layer 3 is attached to the back surface 23b of the divided semiconductor wafer 23, or after the release layer 2 is peeled off. The other surface 3b of the exposed adhesive layer 3 is attached to the back surface 23b of the divided semiconductor wafer 23. Moreover, the adhesive portion 5B which is exposed at the extended portion 5x of the crystal cutting layer 5 is attached to the dicing ring 26 from the attachment starting point 5C.

5(a) shows a state in which the crystal cutting layer 5 is attached to the dicing ring 26, and FIG. 5(b) shows a plan view of the dicing layer 5 attached to the dicing ring 26. status.

As shown in FIGS. 5(a) and (b), when the crystal cutting layer 5 is attached to the dicing ring 26, the peeling edge 32 is used, and the starting layer 5C is attached, and the dicing layer 5 is self-released. The upper surface 2a is peeled off. When peeling off, the starting point 5C is attached. The attachment starting point 5C of the dicing layer 5 is attached to the dicing ring 26, and is pressed against the bonding starting point 5C by the roller 31. Then, in order to prevent wrinkles from being formed on the adhesive layer 3, the base material layer 4, and the crystal cutting layer 5, it is preferable to elongate the adhesive layer 3, the base material layer 4, and the crystal cutting layer 5, and to cut the crystal on one side. The outer peripheral portion of the layer 5 is attached to the dicing ring 26. In this case, a contracting force acts on the crystal cutting layer 5 attached to the dicing ring 26. Further, shrinkage force is also applied to the adhesive layer 3 and the substrate layer 4.

If the contraction force is partially different, for example, after the crystal cutting layer is attached to the dicing ring or after the semiconductor wafer is peeled off from the divided protective sheet, the cut portion of the semiconductor wafer after the division is easy bending.

In this regard, the local deformation of the dicing-adhesive ribbon 1 is suppressed and attached to the dicing ring, After the dicing layer 5 is attached to the dicing ring 26 or after the dicing semiconductor wafer 23 is detached from the adhesive layer 3, the protective wafer 22 is peeled off, and the semiconductor wafer 23 is cut after being divided. The crystal line becomes difficult to bend. Therefore, the adhesive layer 3 can be crystallized with high precision. Further, the pick-up property of the semiconductor wafer with the adhesive layer 3 can be improved.

After the dicing layer 5 is attached to the dicing ring 26, as shown in FIG. 3(b), the divided semiconductor wafer 23 to which the adhesive layer 3 is attached is taken out from the stage 25 and inverted. At this time, the dicing ring 26 is taken out in a state of being attached to the crystal cutting layer 5. The divided semiconductor wafer 23 that has been taken out is inverted so that the front surface 23a is upward, and is placed on the other stage 27.

Next, as shown in FIG. 4(a), the protective sheet 22 is peeled off from the front surface 23a of the semiconductor wafer 23 after the division. When the protective sheet 22 is peeled off, the protective sheet 22 may be heated to be easily peeled off.

Next, as shown in FIG. 4(b), the adhesive layer 3 is diced along the slit 23c (cut portion) of the divided semiconductor wafer 23, that is, along the dicing line. The adhesive layer 3 is diced so as to penetrate both sides, and is divided into the sizes of the respective semiconductor wafers. After the dicing, a cut portion 3d is formed in the adhesive layer 3. When the dicing-adhesive tape 1 is used, the base material layer 4 is located below the portion of the adhesive layer 3 to which the divided semiconductor wafer 23 is attached, so that the dicing can be performed accurately. In particular, when the base material layer 4 is a non-adhesive non-adhesive layer, the dicing can be performed more accurately, and the base layer 4 can be crosslinked by the composition containing the acrylic polymer. In the case where the crosslinked body is formed, the crystal cutting can be performed with higher precision. Therefore, the pick-up property of the semiconductor wafer with the adhesive layer can be improved after the dicing.

The dicing is not particularly limited as long as it is carried out through the adhesive layer 3 . Examples of the method of dicing the adhesive layer 3 include a method of using a crystal cutting blade, a method of performing laser dicing, and the like. In the case of using the divided semiconductor wafer 23, a method of performing laser cutting is generally used.

When the base material layer 4 is cured, for example, the base material layer 4 is difficult to react due to irradiation of laser light. Therefore, the base material layer 4 is difficult to fuse with the adhesive layer 3. Therefore, even in the case of performing dicing using laser light, it is easy to pick up the semiconductor wafer.

After the semiconductor wafer is diced and divided into individual semiconductor wafers, the dicing layer 5 is elongated to expand the interval between the divided semiconductor wafers. Thereafter, the semiconductor wafer is peeled off from the base material layer 4 together with the adhesive layer 3, and taken out. In this way, a semiconductor wafer with an adhesive layer 3 can be obtained.

Further, after the dicing, it is preferred that the semiconductor wafer is taken out without changing the peeling force between the adhesive layer 3 and the substrate layer 4. When the base material layer 4 is a non-adhesive non-adhesive layer, it is easy to take out the semiconductor wafer with the adhesive layer 3 after the dicing, even if the peeling force is not changed.

Next, another example of a method of manufacturing a semiconductor wafer using an adhesive layer having the diced-bonded ribbon 1 shown in Figs. 1(a) and (b) will be described below.

First, the above-described dicing-bonding ribbon 1, and semiconductor wafer 41 are prepared. The planar shape of the semiconductor wafer 41 is circular. The semiconductor wafer 41 is not divided into individual semiconductor wafers and is a pre-divided semiconductor wafer.

As shown in FIG. 6(a), the semiconductor wafer 41 is turned over, and the inverted semiconductor wafer 41 is placed on the stage 25 from the surface 41a side. On the stage 25, an annular cleavage ring 26 is provided at a position spaced apart from the outer circumferential side of the semiconductor wafer 41. The release layer 2 of the dicing-bonding ribbon 1 is peeled off, and the other surface 3b of the exposed adhesive layer 3 is attached to the back surface 41b of the semiconductor wafer 41, or after the release layer 2 is peeled off, The other surface 3b of the exposed adhesive layer 3 is attached to the back surface 41b of the semiconductor wafer 41. Further, from the attachment starting point 5C, the outer peripheral portion of the exposed crystal cutting layer 5 is attached to the dicing ring 26.

Next, as shown in FIG. 6(b), the semiconductor wafer 41 to which the adhesive layer 3 is attached is taken out from the stage 25 and turned over. At this time, the dicing ring 26 is taken out in a state of being attached to the adhering portion 5B of the dicing layer 5. The semiconductor wafer 41 after removal is made to have the surface 41a as the upper side. The way is flipped and placed on another platform 27. Next, the semiconductor wafer 41 is diced together with the adhesive layer 3, and is divided into individual semiconductor wafers. The semiconductor wafer 41 and the adhesive layer 3 are separated so as to penetrate both sides. After the dicing, the cut portion 41c is formed in the semiconductor wafer 41, the cut portion 3d is formed in the adhesive layer 3, and the substrate layer 4 is formed with a slit.

Next, the dicing layer 5 is elongated, and the semiconductor wafer is peeled off from the base layer 4 together with the adhesive layer 3, and the semiconductor wafer with the adhesive layer 3 is obtained.

Hereinafter, the present invention will be specifically described by way of examples and comparative examples. The invention is not limited to the following examples.

(acrylic polymer 1)

95 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of 2-hydroxyethyl acrylate, and 0.2 parts by weight of Irgacure 651 (manufactured by Ciba-Geigy Co., Ltd., 50% ethyl acetate solution) as a photoradical generator And 0.01 part by weight of lauryl mercaptan was dissolved in ethyl acetate to obtain a solution. The solution was irradiated with ultraviolet rays to carry out polymerization to obtain an ethyl acetate solution of the polymer. Further, by reacting 3.5 parts by weight of the solid content of the solution with 3.5 parts by weight of 2-methylpropenyloxyethyl isocyanate (manufactured by Showa Denko, Karenz MOI) to obtain an acrylic copolymer (acrylic polymer) 1). The obtained acrylic polymer 1 had a weight average molecular weight of 700,000 and an acid value of 0.86 (mgKOH/g).

Further, as a material constituting the composition for forming the substrate layer, the following compounds were prepared.

(photopolymerization initiator)

Irgacure 651 (manufactured by Ciba Japan)

(Oligomer)

U324A: Manufactured by Xinzhongcun Chemical Industry Co., Ltd., urethane acrylate oligomer (10-functional urethane acrylate oligomer), weight average molecular weight: 1,300

(crosslinking agent)

Coronate L-45: manufactured by Nippon Polyurethane Industry, isocyanate crosslinker

(cut layer)

Polyethylene (manufactured by Prime Polymer Co., Ltd., M12) was used as a raw material, and a polyethylene film having a thickness of 100 μm as a dicing layer was produced by a T-die method.

(Example 1)

In Example 1, a dicing-bonded ribbon and a dicing layer having the shapes shown in Figs. 1(a) and 1(b) were formed.

100 parts by weight of the above acrylic polymer, 1 part by weight of Irgacure 651, 15 parts by weight of U324A as an urethane acrylate oligomer, and 1 part by weight of Coronate L-45 were blended to obtain a composition. The obtained composition was coated on a release PET (polyethylene terephthalate) film, and dried at 110 ° C for 5 minutes to remove the solvent to form a composition layer.

Next, a mercury lamp was used for the entire region of the obtained composition layer, and light was irradiated so as to become an energy of 2000 mJ/cm ^{2 to} harden the composition layer. In this manner, a substrate layer (thickness 20 μm) as a non-adhesive non-adhesive layer was obtained.

Using the obtained substrate layer, a diced-bonded ribbon was produced in the following manner.

15 parts by weight of G-2050M (manufactured by NOF Corporation, epoxy-containing acrylic polymer, weight average molecular weight Mw 200,000), 70 parts by weight of EXA-7200HH (manufactured by DIC, dicyclopentadiene type epoxy compound) ), 15 parts by weight of HP-4032D (manufactured by DIC, naphthalene type epoxy compound), 38 parts by weight of YH-309 (manufactured by Mitsubishi Chemical Corporation, an acid anhydride type hardener), and 8 parts by weight of 2MAOK-PW (four countries) Manufactured by Chemical Industry Co., Ltd., imidazole compound), 2 parts by weight of S320 (manufactured by Chisso Co., Ltd., amino decane), and 4 parts by weight of MT-10 (manufactured by Tokuyama Co., Ltd., surface hydrophobized sulphur dioxide) to obtain a formulation . The obtained preparation was added to methyl ethyl ketone (MEK) as a solvent so as to be 60% by weight of the solid content component, and stirred to obtain a coating liquid.

The obtained coating liquid was applied onto a release PET film so as to have a thickness of 10 μm, and dried by heating in an oven at 110 ° C for 2 minutes. In this manner, an adhesive layer was formed on the release PET film. Thereafter, the adhesive layer is cut into a circular shape.

Next, the obtained base material layer was laminated on the surface of the adhesive layer on the side opposite to the side of the release PET film at 60 ° C to obtain a laminate. The base material layer is cut into a circular shape such that the base material layer is larger than the adhesive layer and the base material layer has a region that protrudes more laterally than the outer peripheral surface of the adhesive layer.

Thereafter, a dicing layer having a substrate and an adhesive layer is attached to the surface of the substrate layer opposite to the side of the adhesive layer from the side of the adhesive layer.

Thereafter, the crystal cutting layer is cut so as to have the shape shown in Figs. 1(a) and 1(b). After the dicing layer is cut, embossing is performed so that the end portion of the dicing layer is compressed in the thickness direction by using a pressing device, thereby forming an attachment starting point. As a result, the average thickness (90 μm) at the attachment start point of the dicing layer becomes thinner than the average thickness (120 μm) of the portion other than the attachment start point of the dicing layer, and the dicing layer is connected to the attachment starting point. Part of the thickness (120 μm). Further, by the embossing process, the attachment starting point of the crystal cutting layer has irregularities on the surface of the substrate layer side (having a plurality of concave portions and a plurality of convex portions between the concave portions), and the unevenness is attached to the bonded crystal layer The starting point and the direction of the end portion on the opposite side to the attachment starting point (the horizontal direction in FIG. 1(a), the MD direction, and the flow direction) extend linearly.

In this manner, a diced-bonded ribbon having a laminated structure in which four layers of a release film, a pressure-sensitive adhesive layer, a substrate layer, and a dicing layer were sequentially laminated was produced.

In the obtained diced-bonded ribbon, the dicing layer is larger than the adhesive layer and the substrate layer, and the dicing layer has a region which is more laterally protruded than the adhesive side layer and the peripheral side surface of the substrate layer.

(prominent evaluation)

Using a wafer mounter DAM-812M (manufactured by Takatori Co., Ltd.), a diced-adhesive tape is attached to a semiconductor wafer having a wafer diameter of 300 mm (12 inches) (矽 wafer, thickness) 80 μm) and cleavage ring (outer diameter 400 mm, inner diameter 350 mm). Further, the stage of the semiconductor wafer after the division of the laminated body was set to 60 ° C, and the torque of the wafer mounter was set to 1.85.

The evaluation was performed three times. At this time, the protrusion property when the outer peripheral portion of the crystal cutting layer was attached to the dicing ring from the attachment start point was determined based on the following criteria. Furthermore, the smaller the torque, the lower the protrusion.

[Judging criteria for prominence]

○: In the three evaluations, the attachment starting point (peeling starting point) of the dicing layer was sufficiently prominent, and the attachment starting point of the dicing layer was attached to the dicing ring.

△: The attachment starting point (peeling starting point) of the dicing layer is not protruded, and the attachment starting point of the dicing layer cannot be attached to the dicing ring once.

×: The attachment starting point (peeling starting point) of the dicing layer is not protruding, and the attachment starting point of the dicing layer cannot be attached to the dicing ring twice or more.

(Example 2)

The diced-bonded ribbon was evaluated in the same manner as in Example 1 except that the torque of the wafer mounter was changed to 1.87.

(Example 3)

Changed so that the concavities and convexities extend linearly in a direction orthogonal to the direction of the attachment start point connecting the crystal cutting layer and the end portion on the opposite side to the attachment start point (upper and lower directions in FIG. 1(a), TD direction) Except for this, a diced-bonded ribbon was obtained in the same manner as in Example 1, and the diced-bonded ribbon was evaluated.

(Example 4)

The diced-bonded ribbon was evaluated in the same manner as in Example 3 except that the torque of the wafer mounter was changed to 1.87.

(Comparative Example 1)

In Comparative Example 1, the end portion of the crystal cutting layer was not compressed, and the examples were 1 In the same manner, a diced-bonded ribbon was obtained, and the diced-bonded ribbon was evaluated.

(Comparative Example 2)

The diced-bonded ribbon was evaluated in the same manner as in Comparative Example 1, except that the torque of the wafer mounter was changed to 1.87.

The results are shown in Table 1 below.

1‧‧‧Cutting-bonded ribbon

2‧‧‧ release layer

2a‧‧‧Upper surface

3‧‧‧ adhesive layer

3a‧‧‧ a surface

3b‧‧‧Other surface

3c‧‧‧ peripheral side

4‧‧‧Substrate layer

4a‧‧‧ a surface

4b‧‧‧Other surface

5‧‧‧Cutting layer

5A‧‧‧Substrate

5B‧‧‧Adhesive

5C‧‧‧ Attachment starting point

5x‧‧‧Extension

Claims (11)

A dicing-bonding ribbon comprising: an adhesive layer; and a dicing layer disposed on a surface side of the adhesive layer and having a laterally more lateral side than the outer peripheral surface of the adhesive layer And a dicing ring attached to the outer peripheral portion of the dicing layer, and a peripheral portion of the dicing layer having a affixing point attached to the dicing ring at the beginning of the dicing, The attachment starting point of the dicing layer is compressed in the thickness direction of the dicing layer. The dicing-bonded ribbon of claim 1, wherein an average thickness at the above-mentioned attachment starting point of the dicing layer is thinner than an average thickness of a portion of the dicing layer other than the attachment starting point. The cleavage-bonding ribbon of claim 1, wherein the surface of the above-mentioned dicing layer of the dicing layer has a concave portion or a convex portion. The cleavage-bonding ribbon of claim 2, wherein the surface of the above-mentioned dicing layer of the dicing layer has a concave portion or a convex portion. The dicing-bonding ribbon of claim 3, wherein the concave portion or the convex portion extends in a direction connecting the attachment starting point of the crystal cutting layer and an end portion on a side opposite to the attachment starting point. The dicing-bonding ribbon of claim 4, wherein the concave portion or the convex portion extends in a direction connecting the attachment starting point of the crystal cutting layer and an end portion on a side opposite to the attachment starting point. The cleavage-bonding ribbon of any one of claims 1 to 6, wherein the above-mentioned attachment starting point of the above-mentioned dicing layer is embossed. The cleavage-bonded ribbon of any one of claims 1 to 6, which further comprises a substrate layer, The base material layer is disposed between the adhesive layer and the dicing layer, and the dicing layer has a region that protrudes laterally from a peripheral side surface of the base material layer. The cleavage-adhesive tape according to any one of claims 1 to 6, further comprising a release layer, a surface of the adhesive layer opposite to the side of the dicing layer being attached to the release layer, and The surface of the region where the dicing layer protrudes more laterally than the outer peripheral side surface of the adhesive layer is attached to the release layer. A method of fabricating a semiconductor wafer with an adhesive layer, using the dicing-bonded ribbon of any one of claims 1 to 9, and a semiconductor wafer, and comprising the steps of: dicing the above-mentioned dicing-bonding crystal The adhesive layer of the tape is attached to the semiconductor wafer; the origin of the dicing layer is attached to the dicing ring, and the peripheral portion of the dicing layer other than the splicing starting point is attached The dicing ring; dicing the semiconductor wafer and the adhesive layer; and, after dicing, stripping the adhesive layer to which the semiconductor wafer is attached, bonding the semiconductor wafer to the semiconductor wafer The layers are taken together. A method of manufacturing a semiconductor wafer with an adhesive layer, which uses the dicing-bonded ribbon according to any one of claims 1 to 9, and a laminate having a protective sheet and laminated thereon a surface of one of the sheets and divided into the divided semiconductor wafers of the respective semiconductor wafers, and the method for manufacturing the semiconductor wafer with the adhesive layer includes the following steps: the above-mentioned adhesive layer of the dicing-bonding ribbon Attaching the divided semiconductor wafer to the laminated body; attaching the attachment starting point of the dicing layer to the dicing ring, and then attaching the outer peripheral portion of the dicing layer other than the attachment starting point The above cleavage ring; Stripping the protective sheet from the divided semiconductor wafer; cutting the adhesive layer along the cut portion of the divided semiconductor wafer; and, after dicing, attaching the semiconductor wafer The peeling of the adhesive layer removes the semiconductor wafer together with the above adhesive layer.