TWI496213B - Substrate processing device - Google Patents

Substrate processing device Download PDF

Info

Publication number
TWI496213B
TWI496213B TW098108458A TW98108458A TWI496213B TW I496213 B TWI496213 B TW I496213B TW 098108458 A TW098108458 A TW 098108458A TW 98108458 A TW98108458 A TW 98108458A TW I496213 B TWI496213 B TW I496213B
Authority
TW
Taiwan
Prior art keywords
gas
gas flow
flow path
port block
substrate processing
Prior art date
Application number
TW098108458A
Other languages
English (en)
Chinese (zh)
Other versions
TW200947553A (en
Inventor
Einosuke Tsuda
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200947553A publication Critical patent/TW200947553A/zh
Application granted granted Critical
Publication of TWI496213B publication Critical patent/TWI496213B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW098108458A 2008-03-17 2009-03-16 Substrate processing device TWI496213B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008067997A JP2009224590A (ja) 2008-03-17 2008-03-17 基板処理装置

Publications (2)

Publication Number Publication Date
TW200947553A TW200947553A (en) 2009-11-16
TWI496213B true TWI496213B (zh) 2015-08-11

Family

ID=41123396

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098108458A TWI496213B (zh) 2008-03-17 2009-03-16 Substrate processing device

Country Status (4)

Country Link
JP (1) JP2009224590A (ko)
KR (1) KR101124903B1 (ko)
CN (1) CN101540281B (ko)
TW (1) TWI496213B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6748586B2 (ja) * 2016-07-11 2020-09-02 東京エレクトロン株式会社 ガス供給システム、基板処理システム及びガス供給方法
SG11202108355VA (en) * 2019-02-05 2021-08-30 Applied Materials Inc Multi channel splitter spool

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0930893A (ja) * 1995-05-16 1997-02-04 Hitachi Electron Eng Co Ltd 気相成長装置
TW200716771A (en) * 2005-10-26 2007-05-01 Applied Films Gmbh & Co Kg Arrangement for the vapor deposition on substrates
TW200726858A (en) * 2005-04-15 2007-07-16 Advanced Tech Materials Apparatus and method for supercritical fluid removal or deposition processes
WO2007084493A2 (en) * 2006-01-19 2007-07-26 Asm America, Inc. High temperature ald inlet manifold

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP4288036B2 (ja) * 2002-02-20 2009-07-01 東京エレクトロン株式会社 ガスシャワーヘッド、成膜装置及び成膜方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0930893A (ja) * 1995-05-16 1997-02-04 Hitachi Electron Eng Co Ltd 気相成長装置
TW200726858A (en) * 2005-04-15 2007-07-16 Advanced Tech Materials Apparatus and method for supercritical fluid removal or deposition processes
TW200716771A (en) * 2005-10-26 2007-05-01 Applied Films Gmbh & Co Kg Arrangement for the vapor deposition on substrates
WO2007084493A2 (en) * 2006-01-19 2007-07-26 Asm America, Inc. High temperature ald inlet manifold

Also Published As

Publication number Publication date
JP2009224590A (ja) 2009-10-01
TW200947553A (en) 2009-11-16
KR101124903B1 (ko) 2012-03-27
KR20090099478A (ko) 2009-09-22
CN101540281B (zh) 2012-06-13
CN101540281A (zh) 2009-09-23

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