200947553 六、發明說明： 【發明所屬之技術領域】 該發明係關於對半導體晶圓等之被處理基板執行處理 之基板處理裝置。 【先前技術】 在半導體裝置之製造工程中，爲了在被處理基板之半 Φ 導體晶圓（以下，單表記爲晶圓）上形成積體電路，執行 形成絕緣膜、金屬膜以及金屬化合物膜等之薄膜的製程。 成膜處理係使用CVD裝置、PVD裝置、ALD裝置等之成 膜裝置當作基板處理裝置而執行。 成膜裝置爲了形成薄膜，使用多數製程氣體。例如， 使用於閘極絕緣膜等之高介電常數絕緣膜（High-k膜）， 使用前驅物、還原劑、電漿用氣體、添加劑等以當作製程 氣體。製程氣體係例如專利文獻1所記載般，自製程氣體 ❹ 供給源經氣體配管被供給至基板處理裝置之製程氣體導入 部。 [專利文獻1]日本特表2007-530796號公報 【發明內容】 (發明所欲解決之課題） 對基板處理裝置之處理製程氣體的供給係經氣體配管 而執行’但氣體配管不僅有管路或軟管，也需要多數例如 用以方向轉換之角材或彎頭，用以分歧之T字分歧或十字 200947553 分歧等之各種接頭。該些接頭和管路或軟管係使用自動熔 接而連接，被組裝加工。 如此一來，氣體配管所需之零件成爲多數。而且，由 於組裝多數零件而予以加工，故構造成爲複雜，例如配管 蓋等也必須加工成型呈複雜形狀。再者，雖然在氣體配管 也安裝有加熱製程氣體之外罩加熱器，但是依據配管構造 ，也有必需準備特別形狀之外罩加熱器之情形。 由於該些主要原因，則有使基板處理裝置，例如成膜 q 裝置製品成本容易變高之情形。 再者，由於氣體配管使用多數零件，故例如於維修之 時，分解、零件之檢查、再組裝需要較大勞力以及時間。 因此，也妨礙維修之省力化、短時間化。 該發明之目的係提供可以降低製品成本，並且可以促 進維修之省力化、短時間化之基板處理裝置。 (用以解決課題之手段） © 爲了解決上述課題，該發明之一態樣所涉及之基板處 理裝置，係具備：處理室，用以對被處理基板，使用多數 氣體施予處理；和氣體導入部，被設置在上述處理室，將 上述多數氣體導入至上述處理室內；和引入口區塊，被配 置在上述處理室上，於內部具有將上述多數氣體自氣體供 給機構引導至上述氣體導入部之多數氣體流路，和加熱流 動於該些氣體流路中之至少一條流路之氣體的加熱器。 200947553 [發明效果] 若藉由該發明，則可以提供可以降低製品成本 可以促進維修之省力化、短時間化之基板處理裝置。 【實施方式】 以下參照圖面說明本發明之一實施型態。在整個 圖面全部，針對相同部份賦予相同參照符號。在該說 H ，係針對將該發明適用於基板處理裝置，在此表示適 在半導體晶圓（以下，單表記爲晶圓）上形成薄膜之 裝置之時。就以成膜裝置之一例而言，爲在晶圓上形 介電常數絕緣膜，例如給系之高介電常數絕緣膜的 裝置。但是，該發明並不限定適用於ALD裝置，亦 適用於CVD裝置、PVD裝置等之其他成膜裝置，不 成膜裝置，亦可以適用於鈾刻裝置等，其他之基板處 置。 φ 第1圖爲表示該發明之一實施型態所渉及之基板 裝置之一例的俯視圖，第2圖爲沿著第1圖中之2-2 剖面圖，第3圖爲沿著第1圖中之3 - 3線之剖面圖。 如第1圖至第3圖所示般，基板處理裝置1〇具 對晶圓W，使用製程氣體施予成膜處理之處理室u 被設置在該處理室11，將製程氣體導入至處理室U 氣體導入部12，和被設置在上述處理室11上，將製 體從製程氣體供給機構14引導至上述氣體導入部12 入口區塊13。 並且 參照 明中 用於 成膜 成高 ALD 可以 限於 理裝 處理 線的 備有 ，和 內之 程氣 之引 200947553 本例之處理室11主要係由腔室lla，和被設置在腔室 1 1 a，將處理空間1 5中之氣體予以排氣的排氣環1 1 b，和 被設置在排氣環11b上之蓋體He所構成。 在腔室11a之內部設置有載置晶圓W之載置台16, 並且在腔室11a之側壁設置有將晶圓W搬入搬出至處理室 11之內部之搬入搬出部17。載置台16係在腔室11a內上 下動作，使晶圓W在腔室1 1 a側和處理空間1 5側之間上 下動作。 排氣環lib具有排氣路徑18。排氣路徑18係環狀被 形成在腔室11a之上方，在本例中，形成包圍成爲圓筒狀 之處理空間15之周圍。排氣路徑18之至少一處連接於無 圖式之排氣管等之排氣機構。在排氣路徑18和處理空間 15之間，設置有側壁狀之緩衝環19。在緩衝環19形成有 將釋放至處理空間1 5之製程氣體予以排氣之多數排氣孔 1 9 a 〇 蓋體lie係被設置在排氣環lib上。處理空間15係 藉由蓋體lie和排氣環Ub被包圍，在本例中係藉由緩衝 環19和上升至緩衝環19底部之載置台16被包圍，依此 被形成。在本例中，處理空間1 5係如上述般被形成，但 是處理空間1 5之形成並非限定於此。即使爲不具有排氣 環lib，自腔室11a之下方排氣製程氣體，並且設成腔室 11a和蓋體lie形成處理空間15之一般構成亦可。 在蓋體1 1 c之處理空間1 5側設置有上側平板2 0 a以 及下側平板20b。下側平板20b之處理空間1 5側之表面係 200947553 呈盤狀凹陷，在其中央部設置有釋放製程氣體之氣體釋放 部21。本例之氣體釋放部21雖然爲半球型，但是氣體釋 放部2 1並不限定於半球型，即使爲例如噴淋頭型等之任 何形狀亦可。 氣體導入部12爲將經引入口區塊13被引導之製程氣 體導入至氣體釋放部21之部分。在本例中，氣體導入部 12係當作氣體流路被形成在蓋體11c、上側平板20a以及 0 下側平板2 0 b。 控制部5 0係控制基板處理裝置1 0之各構成部。控制 部50具備有由實行各構成部之控制的微處理器（電腦） 所構成之製程控制器5 1，和操作員爲了管理基板處理裝置 1〇執行指令之輸入操作等的鍵盤，或使基板處理裝置10 之運轉狀況可視化而予以顯示之顯示器等的使用者介面52 ，和在製程控制器51之控制下用以實現在基板處理裝置 1〇所實行之各種處理的控制程式，或記憶有用以依照各種 〇 資料以及處理條件而使處理裝置之各構成部實行處理之程 式即是處理程式的記憶部53。使用者介面52及記憶部53 係被連接於製程控制器5 1。處理程式係被記憶於記憶部 5 3之中的記憶媒體。記憶媒體即使爲硬碟亦可，即使爲 CD-ROM、DVD、快閃記憶體等之可搬運性者亦可。再者 ，即使自其他裝置經例如專用迴路適當傳送處理程式至記 億媒體亦可。任意之處理程式依其所需，以來自使用者介 面52之指示等自記億部53叫出，使製程控制器51實行 ’依此’基板處理裝置1 0在製程控制器5 1之控制下，執 -9- 200947553 行所欲之基板處理。 引入口區塊13係將製程氣體，自被設置在處理室11 ，且接受自製程氣體供給部14所供給之製程氣體的氣體 供給部22經處理室11上引導入至上述氣體導入部12的 部份。該部分以往雖然係藉由組裝氣體配管予以加工而構 成，但是在本例中，係由一個區塊（一體品）所構成。區 塊之一例爲金屬，金屬之一例爲導熱性良好之鋁。在本說 明中將此稱爲引入口區塊13。第4圖A表示引入口區塊 13之一例。再者，以參考例而言，在第4圖B表示氣體 配管之例。第4圖A及第4圖B各爲剖面圖。 如第4圖A所示般，引入口區塊1 3具備例如金屬製 母材13a，且具有在該金屬製母材13a之內部開設孔，例 如將金屬製母材13a挖成中空而所形成之氣體流路13b。 在本例中，具有例如4條氣體流路1 3b，將在製程氣體供 給機構14中所產生之四種類製程氣體從氣體供給部22引 導至氣體導入部〗2。可以在四條氣體流路1 3 b流動例如作 爲製程氣體之前驅物、還原劑、電漿用氣體、添加劑等。 作爲使用如此之製程氣體而形成之膜的例，可以舉出高介 電常數絕緣膜，例如給系之絕緣膜。 也與第4圖B所示之參考例相同，經四條氣體配管 1 1 3，將四種類之製程氣體從氣體供給部22引導至氣體導 入部12。但是，多數氣體配管113係藉由互相連接管路 113a，以及連接管路113a彼此之接頭113b而形成。因此 ，需要多數零件。 -10- 200947553 對此，在第4圖A所示之一例中，因藉由在金屬製母 材13a之內部開設孔而形成多數氣體流路13b，故零件基 本上僅有金屬製母材13a即可。因此，可以刪減零件數量 ，降低製品成本。 並且，因刪減零件數量，故比起零件數量多時，例如 維修時之分解、零件檢查、再組裝則變得容易。因此，也 促進維修之省力化、短時間化。例如，在本例中，分解僅 以將引入口區塊1 3自處理室1 1上取下即可，再組裝則僅 將引入口區塊13安裝在處理室11上即可。 再者，在第4圖B所示之參考例中，使用自動熔接連 接管路113a和接頭113b。在參考例中，四條氣體配管 113雖然被配置在高度方向，但是將多數氣體配管113配 置在高度方向之時，必須使氣體配管Π 3彼此僅持有自動 熔接機進入之間隔d互相間隔開。因此，氣體配管1 1 3之 高度容易變高，妨礙基板處理裝置之小型化。 對此，在第4圖A所示之一例中，因藉由在金屬製母 材13a之內部開設孔而形成配置在高度方向之多數氣體流 路13b，故不需要用以形成氣體流路13b之自動熔接機。 因此，即使將多數氣體流路1 3 b配置在高度方向，亦可以 使氣體流路1 3b彼此之間隔d比氣體配管1 1 3窄。因此， 比起使用氣體配管113之基板處理裝置，亦可使基板處理 裝置成爲小型化。 如此一來，若藉由一實施型態，藉由具備有引入口區 塊13，比起使用氣體配管113之基板處理裝置，可以降低 -11 - 200947553 製品成本，並且促進維修之省力化、短時間化。 並且，若藉由一實施型態，於將多數氣體流路13b多 層設置在高度方向之時，比起使用氣體配管113之基板處 理裝置，亦可以縮窄氣體流路13b彼此之間隔d，可以使 基板處理裝置小型化。 但是，在製程氣體中，具有例如在製程氣體供給機構 14加熱，使液體汽化而所產生之氣體，再者也有爲了使處 理空間1 5內部反應等必須加熱至適當溫度的製程氣體。 針對如此之製程氣體，必須加熱成在通過氣體配管中溫度 不會下降。自如此之觀點來看，在使用氣體配管113之裝 置中，以鋁製之配管蓋覆蓋氣體配管113。在配管蓋之外 面捲繞外罩加熱器，使氣體配管113加熱。第5圖A至第 5圖C表示當作參考例之配管蓋。第5圖A爲剖面圖，第 5圖B爲表示沿著第5圖A之5B-5B線之剖面圖，第5圖 C爲表示在配管蓋捲繞外罩加熱器之狀態的斜視圖。 如第5圖A至第5圖C所示般，在配管蓋114，必須 形成通過管路H3a之部分114a，收容接頭113b之部分 114b等。因此，配管蓋114之形狀成爲複雜，難以加工。 再者，在彎曲部份等，難以加工之處，也有準備彎曲部分 用之配管蓋而與直線部分用之配管蓋連接之情形。藉由如 此使用配管蓋，零件數量變得更多，使得製品成本提高。 對此，在第4圖A所示之一例中，因在金屬製母材 13a本體形成氣體流路13b，故不需要配管蓋。針對不需 要配管蓋之點，比起需要配管蓋之基板處理裝置，可以抑 -12- 200947553 制製品成本之上升。 並且，在一實施型態中，就以加熱氣體流路13b 計而言，係在引入口區塊13之內部具備有加熱器。 例中，如第1圖至第3圖所示般，使用形狀較外罩加 簡單，並且較外罩加熱器便宜之桿體加熱器23。桿體 器23之一例係可以使用在金屬製護套（套筒）之中 例如鎳鉻線以當作加熱體者。爲了使在引入口區塊1 ϋ 內部具備桿體加熱器23，本例係例如第4圖A所示 在金屬製母材1 3 a直線狀開設桿體加熱器插入用孔1 且使桿體加熱器23插入至桿体加熱器插入孔13c中。 並且，在本例中，氣體流路1 3b係藉由形成在引 區塊13之高度方向之縱氣體流路13bv，和形成在引 區塊13之平面方向之橫氣體離13bh之組合而構成。 如此構成中之桿體加熱器插入用孔13c之形成例而言 本例中，係形成桿體加熱器插入用縱孔1 3cv，和桿體 G 器插入用橫孔13ch。 桿體加熱器插入用縱孔1 3cv係沿著縱氣體流路 被形成在引入口區塊13之高度方向，桿體加熱器插 橫孔13ch係沿著橫氣體流路13bh而被形成在引入口 之平面方向。沿著縱氣體流路1 3bv形成桿體加熱器 用縱孔13cv，沿著橫氣體流路13bh形成桿體加熱器 用橫孔13ch，依此即使流動於縱氣體流路13bv之製 體，以及流動於橫氣體流路13bh之製程氣體之雙方 用桿體加熱器之時，亦可以有效率予以加熱。並且， 之設 在本 熱器 加熱 內藏 3之 般’ 3c， 入口 入口 就以 ，在 加熱 1 3bv 入用 區塊 插入 插入 程氣 爲使 爲了 -13- 200947553 有效率予以加熱，即使金屬製母材1 3 a選擇導熱性佳之材 料亦可。熱傳導性佳之材料之一例，爲鋁，或是含鋁之合 金。 再者，橫氣體流路13bh比起縱氣體流路13bv距離容 易變長。針對距離長之橫氣體流路13bh，藉由使用長度長 之桿體加熱器予以加熱，比起僅形成桿體加熱器插入用縱 孔1 3 cv之時，也有可以刪減桿體加熱器之根數的優點。 再者，即使在引入口區塊1 3貼附平面型加熱器例如 雲母加熱器亦可，但是平面型加熱器之價格貴於桿體加熱 器。從該觀點來看，使用桿體加熱器當加熱器也有助於抑 制製品成本。 如此一來，在本例中，即使於使用需要加熱之製程氣 體之時，比起使用氣體配管113之基板處理裝置亦可以簡 單取得用以加熱所需之構成。因此，例如可以抑制加熱器 所花費之製品成本。 並且，在一實施型態中，具有容易加工引入口區塊13 之設計。該設計係如第1圖至第3圖所示般，使載置處理 室11上之引入口區塊〗3之載置面lid，在本例中爲蓋體 1 1 c之表面平坦。當在載置面1 1 d上具有凹凸時，則必須 配合該凹凸，加工引入口區塊13之下面。 對此，若自載置面lid消除凹凸’使成爲平坦，僅對 引入口區塊13之下面施予呈平坦之加工即可。也可以自 如此之構成抑制製品成本之上升。 再者，將載置面1 1 d設爲平坦係因例如保溫或隔熱通 -14- 200947553 過引入口區塊13之製程氣體，故即使將隔熱材插入至載 置面lid，和引入口區塊13之下面之間時，亦可以容易加 工隔熱材’有效抑制製品成本。 並且，於自載置面lid消除凹凸之時，即使無使蓋體 11c之表面全體成爲平坦，若使蓋體He表面中，至少載 置引入口區塊13之部分成爲平坦即可。 接著，針對引入口區塊1 3之一形成例予以說明。 φ 第6圖A至第6圖D爲表示引入口區塊13之一形成 例的剖面圖。 首先，如第6圖A所示般，準備成爲引入口區塊13 之金屬製母材13a。金屬製母材13a之一例爲含有鋁製或 是含鋁合金製。 接著，如第6圖B所示般，對連接於金屬製母材13a 之氣體導入部12之處，以及連接於氣體供給部22之處， 形成縱氣體流路13bv-l、13bv-2以及桿體加熱器用縱孔 φ 13CV-1。縱氣體流路13bv-l、13bv-2以及桿體加熱器插入 用縱孔13CV-1係被形成於高度方向。縱氣體流路13bv-l 以及13bv-2在本例中係從金屬製母材13a之下面形成至 母材13a之途中，桿體加熱器插入用縱孔13cv-1在本例 中係從金屬製母材13a之上面形成至母材13a之途中。 接著，如第6圖C所示般，自金屬製母材13a之側面 形成橫氣體流路1 3 bh，和桿體加熱器插入用橫孔1 3 eh。 橫氣體流路13bh以及13ch係被形成在平面方向。橫氣體 流路1 3bh係通過縱氣體1 3bv-l以及1 3bv-2之上端部。橫 -15- 200947553 氣體流路13bh係從金屬製母材13a之側面形成至母材13a 之途中，在本例中形成至縱氣體流路13bv_1。桿體加熱器 插入用橫孔13ch係沿著橫氣體流路l3bh’與橫氣體流路 13 bh相同，從金屬製母材13a之側面形成至母材13a之途 中〇 接著，如第6圖D所示般，以密封材24掩埋與橫氣 體流路13bh之引入口區塊13之外部相通之一端’密封橫 氣體流路bh之一端。並且，將桿體加熱器23插入至桿體 加熱器插入用橫孔13ch以及桿體加熱器插入用縱孔13cv-1 0 如此一來，引入口區塊13之氣體流路13b可以藉由 縱氣體流路13bv-l、13bv-2以及橫氣體流路13bh之組合 來構成。 再者，例如藉由密封材24密封橫氣體流路1 3bh之一 端，可以形成具備有氣體流路13b之引入口區塊13，該氣 體流路在引入口區塊13之下面，可以將一端連接於氣體 導入部12，且將另一端連接於氣體供給部22。在本例中 ，在縱氣體流路13bv-1連接氣體導入部12，在縱氣體流 路1 3 b v - 2連接氣體供給部2 2。例如，如此一來，可以形 成引入口區塊1 3。 以上’雖然藉由一實施型態說明該發明，但是該發明 並不限定於一實施型態，可作各種變形。再者，在該發明 之實施型態中’上述一實施型態並非唯一之實施型態。 例如’在上述一實施型態中，雖然例示處理半導體晶 -16- 200947553 圓之基板處理裝置當作基板處哩裝置，但是即使對於處理 例如代表液晶顯示裝置（LCD )用之玻璃基板的平面顯示 器（FPD )用之基板等的基板處理裝置當然亦可以適用。 【圖式簡單說明】 第1圖爲表示本發明之一實施型態所涉及之基板處理 裝置之一例的俯視圖。 Φ 第2圖爲沿著第1圖中之2-2線之剖面圖。 第3圖爲沿著第1圖中之3-3線之剖面圖。 第4圖A爲表示引入口區塊之一例的剖面圖，第4圖 B爲表示參考例所涉及之氣體配管的剖面圖。 第5圖爲表示參考例所涉及之配管氣體之剖面圖。 第6圖爲表示引入口區塊之一形成例的剖面圖。 【主要元件符號說明】 Φ 10:基板處理裝置 11 :處理室 1 2 :氣體導入部 13 :引入口區塊 14:製程氣體供給機構 1 5 :處理空間 16 :載置台 23 =加熱器（桿體加熱器） 24 :密封材 -17-200947553 VI. Description of the Invention: [Technical Field of the Invention] This invention relates to a substrate processing apparatus that performs processing on a substrate to be processed such as a semiconductor wafer. [Prior Art] In the manufacturing process of a semiconductor device, an insulating film, a metal film, a metal compound film, etc. are formed in order to form an integrated circuit on a half-Φ conductor wafer (hereinafter, simply referred to as a wafer) of a substrate to be processed. The process of the film. The film forming process is performed using a film forming apparatus such as a CVD apparatus, a PVD apparatus, or an ALD apparatus as a substrate processing apparatus. The film forming apparatus uses a majority of process gases in order to form a film. For example, a high dielectric constant insulating film (High-k film) such as a gate insulating film is used as a process gas using a precursor, a reducing agent, a plasma gas, an additive, or the like. In the process gas system, as described in Patent Document 1, the self-contained gas 供给 supply source is supplied to the process gas introduction portion of the substrate processing apparatus via the gas pipe. [Patent Document 1] Japanese Patent Publication No. 2007-530796 (Discussion of the Invention) (Problems to be Solved by the Invention) The supply of the process gas to the substrate processing apparatus is performed by a gas pipe, but the gas pipe not only has a pipe or Hose, also requires a variety of joints such as angles or elbows for direction change, T-shaped divergence for divergence or cross-section 200947553. These joints and pipes or hoses are connected by automatic welding and assembled. As a result, the parts required for the gas piping become a majority. Further, since many parts are assembled and processed, the structure becomes complicated, and for example, a piping cover or the like must be processed and formed into a complicated shape. Further, although the gas heater is also equipped with a heating process gas and a cover heater, depending on the piping structure, it is necessary to prepare a cover heater of a special shape. Due to these main reasons, there is a case where the cost of the substrate processing apparatus, for example, the film forming apparatus, is likely to be high. Further, since gas piping uses a large number of parts, for example, at the time of maintenance, it takes a lot of labor and time to disassemble, inspect and reassemble parts. Therefore, it also hinders the labor saving and short-term maintenance of maintenance. SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus which can reduce the cost of a product and can save labor and maintenance for a short period of time. (Means for Solving the Problem) In order to solve the above problems, a substrate processing apparatus according to an aspect of the present invention includes a processing chamber for performing a majority gas application treatment on a substrate to be processed, and gas introduction a portion that is disposed in the processing chamber to introduce the plurality of gases into the processing chamber, and an inlet port that is disposed in the processing chamber and that internally controls the majority of the gas from the gas supply mechanism to the gas introduction portion A plurality of gas flow paths, and a heater that heats the gas flowing in at least one of the gas flow paths. According to the invention, it is possible to provide a substrate processing apparatus which can reduce the cost of the product and can save labor and maintenance for a short period of time. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The same reference numerals are given to the same parts throughout the drawings. In the above description, the invention is applied to a substrate processing apparatus, and here is a time when a device for forming a thin film on a semiconductor wafer (hereinafter, simply referred to as a wafer) is used. In the case of an example of a film forming apparatus, a dielectric constant insulating film is formed on a wafer, for example, a high dielectric constant insulating film is applied. However, the present invention is not limited to being applied to an ALD apparatus, and is also applicable to other film forming apparatuses such as a CVD apparatus and a PVD apparatus, and is not a film forming apparatus, and can be applied to an uranium engraving apparatus or the like, and other substrates are disposed. Φ Fig. 1 is a plan view showing an example of a substrate device according to an embodiment of the present invention, wherein Fig. 2 is a cross-sectional view taken along line 2-2 in Fig. 1, and Fig. 3 is a view along Fig. 1 A section of the 3 - 3 line. As shown in FIGS. 1 to 3, the substrate processing apparatus 1 is provided with a processing chamber u for applying a process gas to the wafer W, and is disposed in the processing chamber 11, and the process gas is introduced into the processing chamber U gas. The introduction portion 12 is provided in the processing chamber 11, and guides the body from the process gas supply mechanism 14 to the inlet portion 13 of the gas introduction portion 12. In addition, the reference to the high-ALD for film formation can be limited to the assembly processing line, and the introduction of the process gas. 200947553 The processing chamber 11 of this example is mainly composed of a chamber 11a, and is disposed in the chamber 1 1 a, an exhaust ring 1 1 b that exhausts the gas in the treatment space 15 and a cover He provided on the exhaust ring 11b. A mounting table 16 on which the wafer W is placed is provided inside the chamber 11a, and a loading/unloading portion 17 for carrying the wafer W into and out of the processing chamber 11 is provided on the side wall of the chamber 11a. The mounting table 16 operates up and down in the chamber 11a to move the wafer W up and down between the chamber 1 1 a side and the processing space 15 side. The exhaust ring lib has an exhaust path 18. The exhaust path 18 is formed in an annular shape above the chamber 11a, and in this example, surrounds the circumference of the processing space 15 which is cylindrical. At least one of the exhaust paths 18 is connected to an exhaust mechanism such as an exhaust pipe of the drawing type. Between the exhaust path 18 and the processing space 15, a side wall-shaped buffer ring 19 is provided. A plurality of vent holes for exhausting the process gas released to the processing space 15 are formed in the buffer ring 19. The cover lie is provided on the exhaust ring lib. The processing space 15 is surrounded by the cover lie and the exhaust ring Ub, and in this example, is surrounded by the buffer ring 19 and the mounting table 16 which rises to the bottom of the buffer ring 19, and is thus formed. In the present embodiment, the processing space 15 is formed as described above, but the formation of the processing space 15 is not limited thereto. Even if the exhaust ring lib is not provided, the process gas is exhausted from below the chamber 11a, and the general configuration of the chamber 11a and the lid lie forming the processing space 15 may be employed. An upper flat plate 20a and a lower flat plate 20b are provided on the processing space 15 side of the lid body 1 1 c. The surface of the lower side plate 20b on the side of the processing space 15 side is 200947553, and is recessed in a disk shape, and a gas releasing portion 21 for releasing a process gas is provided at a central portion thereof. The gas release portion 21 of the present embodiment is of a hemispherical type, but the gas release portion 21 is not limited to a hemispherical shape, and may be any shape such as a shower head type. The gas introduction portion 12 is a portion that introduces the process gas guided through the introduction port block 13 to the gas release portion 21. In this example, the gas introduction portion 12 is formed as a gas flow path on the lid body 11c, the upper flat plate 20a, and the lower flat plate 20b. The control unit 50 controls each component of the substrate processing apparatus 100. The control unit 50 includes a process controller 5 1 composed of a microprocessor (computer) that controls each component, and a keyboard for an operator to perform an input operation of the substrate processing device 1 or the like, or a substrate A user interface 52 of a display or the like that displays the operation state of the processing device 10 and a control program for realizing various processes performed in the substrate processing device 1 under the control of the process controller 51, or memory useful The program for processing each component of the processing device in accordance with various data and processing conditions is the memory portion 53 of the processing program. The user interface 52 and the memory unit 53 are connected to the process controller 51. The processing program is memorized in the memory medium in the memory unit 53. Even if the memory medium is a hard disk, it can be carried by a CD-ROM, a DVD, a flash memory or the like. Furthermore, even if the processing program is properly transferred from other devices via, for example, a dedicated loop, it is possible to record the media. Any processing program, according to the requirements of the user interface 52, calls the self-reporting unit 53 to cause the process controller 51 to perform the 'substrate' processing device 10 under the control of the process controller 51. -9-200947553 The desired substrate processing. The introduction port 13 is a process gas introduced from the gas supply unit 22, which is disposed in the processing chamber 11 and receives the process gas supplied from the self-contained gas supply unit 14, through the processing chamber 11 to the gas introduction unit 12. Part. This portion has been conventionally processed by assembling a gas pipe, but in this example, it is composed of one block (integral product). One example of the block is metal, and one of the metals is aluminum having good thermal conductivity. This is referred to as the introduction port block 13 in this specification. Fig. 4A shows an example of the inlet port block 13. Further, in the reference example, an example of a gas pipe is shown in Fig. 4B. 4A and 4B are each a cross-sectional view. As shown in FIG. 4A, the inlet port block 13 includes, for example, a metal base material 13a, and has a hole formed in the inside of the metal base material 13a, for example, a metal base material 13a is hollowed out. The gas flow path 13b. In this example, for example, four gas flow paths 13b are provided, and four types of process gases generated in the process gas supply mechanism 14 are guided from the gas supply unit 22 to the gas introduction unit. It is possible to flow, for example, as a process gas precursor, a reducing agent, a plasma gas, an additive, etc., in the four gas flow paths 1 3 b. As an example of the film formed by using such a process gas, a high dielectric constant insulating film such as a dielectric insulating film can be given. Similarly to the reference example shown in Fig. 4B, four kinds of process gases are guided from the gas supply unit 22 to the gas introduction portion 12 via four gas pipes 1 1 3 . However, most of the gas pipes 113 are formed by interconnecting the pipes 113a and the joints 113b connecting the pipes 113a. Therefore, most parts are required. -10-200947553 In this case, in the example shown in FIG. 4A, since the plurality of gas flow paths 13b are formed by opening holes in the metal base material 13a, the parts are basically only the metal base material 13a. Just fine. Therefore, the number of parts can be reduced and the cost of the product can be reduced. Further, since the number of parts is reduced, it is easier to disassemble, check, and reassemble the parts than when the number of parts is large. Therefore, it also promotes labor saving and short-term maintenance. For example, in this example, the decomposition may be performed only by removing the inlet port block 13 from the processing chamber 1 1 and reassembling only the inlet port block 13 may be attached to the processing chamber 11. Further, in the reference example shown in Fig. 4B, the automatic fusion welding line 113a and the joint 113b are used. In the reference example, although the four gas pipes 113 are disposed in the height direction, when the plurality of gas pipes 113 are disposed in the height direction, the gas pipe Π 3 must be spaced apart from each other by the interval d at which the automatic fusion splicing machine enters. Therefore, the height of the gas piping 1 1 3 tends to be high, which hinders the miniaturization of the substrate processing apparatus. On the other hand, in the example shown in FIG. 4A, since a plurality of gas flow paths 13b arranged in the height direction are formed by opening holes in the metal base material 13a, it is not necessary to form the gas flow path 13b. Automatic fusion machine. Therefore, even if the plurality of gas flow paths 1 3 b are arranged in the height direction, the distance d between the gas flow paths 13 b can be made narrower than the gas pipes 1 1 3 . Therefore, the substrate processing apparatus can be made smaller than the substrate processing apparatus using the gas piping 113. In this way, by providing the introduction port block 13 by an embodiment, the substrate processing device using the gas pipe 113 can reduce the product cost of -11 - 200947553, and promote labor saving and short maintenance. Timed. Further, according to an embodiment, when the plurality of gas flow paths 13b are provided in a plurality of layers in the height direction, the distance between the gas flow paths 13b and the d can be narrowed compared to the substrate processing apparatus using the gas piping 113. The substrate processing apparatus is miniaturized. However, the process gas has, for example, a gas which is heated by the process gas supply means 14 to vaporize the liquid, and a process gas which must be heated to an appropriate temperature in order to cause internal reaction in the process space 15. For such a process gas, it is necessary to heat the temperature so that it does not fall in the gas pipe. From this point of view, in the apparatus using the gas pipe 113, the gas pipe 113 is covered with a pipe cap made of aluminum. The cover heater is wound outside the piping cover to heat the gas pipe 113. Fig. 5 to Fig. 5C show a piping cover as a reference example. Fig. 5A is a cross-sectional view, Fig. 5B is a cross-sectional view taken along line 5B-5B of Fig. 5A, and Fig. 5C is a perspective view showing a state in which a cover heater is wound around a pipe cover. As shown in Fig. 5 to Fig. 5C, in the pipe cover 114, a portion 114a passing through the pipe H3a, a portion 114b for accommodating the joint 113b, and the like must be formed. Therefore, the shape of the piping cover 114 becomes complicated and it is difficult to process. Further, in the case where the bent portion or the like is difficult to process, there is a case where the pipe cover for the bent portion is to be connected to the pipe cover for the straight portion. By using the piping cover as a result, the number of parts becomes more, and the cost of the product is increased. On the other hand, in the example shown in Fig. 4A, since the gas flow path 13b is formed in the main body of the metal base material 13a, the piping cover is not required. For the point where the piping cover is not required, it is possible to suppress the increase in the cost of the manufactured product compared to the substrate processing apparatus that requires the piping cover. Further, in an embodiment, the heater gas flow path 13b is provided with a heater inside the inlet port block 13. In the example, as shown in Figs. 1 to 3, a rod heater 23 which is simpler in shape than the outer cover and which is cheaper than the outer cover heater is used. An example of the rod body 23 can be used in a metal sheath (sleeve) such as a nickel-chromium wire to serve as a heating body. In order to provide the rod heater 23 in the introduction port block 1 ,, in this example, for example, the metal base material 13 3 a linearly opens the rod heater insertion hole 1 and the rod body as shown in FIG. 4A The heater 23 is inserted into the rod heater insertion hole 13c. Further, in this example, the gas flow path 13b is constituted by a combination of the vertical gas flow path 13bv formed in the height direction of the lead block 13 and the lateral gas separation 13bh formed in the planar direction of the lead block 13. . In the example of the formation of the rod heater insertion hole 13c in this configuration, the rod heater insertion vertical hole 13cv and the rod G insertion insertion hole 13ch are formed in this example. The rod heater insertion vertical hole 13cc is formed along the vertical gas flow path in the height direction of the introduction port block 13, and the rod heater insertion horizontal hole 13ch is formed along the horizontal gas flow path 13bh. The plane direction of the entrance. The vertical hole 13cv for the rod heater is formed along the vertical gas flow path 13bv, and the horizontal hole 13ch for the rod heater is formed along the horizontal gas flow path 13bh, whereby the body flows through the vertical gas flow path 13bv, and flows through When both of the process gases of the horizontal gas flow path 13bh are used for the rod heater, they can be heated efficiently. Moreover, it is set in the heat collector 3 of the heat collector's 3', the inlet inlet is used, and the heating gas is inserted into the block to be inserted into the block, so that it is heated efficiently for the purpose of -13-200947553, even if the metal is made. Material 1 3 a Select a material with good thermal conductivity. An example of a material having good thermal conductivity is aluminum or an alloy containing aluminum. Further, the horizontal gas flow path 13bh is more likely to be longer than the vertical gas flow path 13bv. For the long horizontal gas flow path 13bh, the length of the rod heater is used for heating, and the rod heater can be deleted as compared with the case where only the rod heater insertion vertical hole 13 cv is formed. The advantage of the number of roots. Further, even if a flat type heater such as a mica heater is attached to the introduction port block 13, the flat type heater is more expensive than the rod body heater. From this point of view, the use of a rod heater as a heater also helps to suppress the cost of the product. As a result, in this embodiment, even when the process gas to be heated is used, the structure required for heating can be simply obtained as compared with the substrate processing apparatus using the gas pipe 113. Therefore, for example, the cost of the product for the heater can be suppressed. Also, in an embodiment, there is a design that facilitates the processing of the inlet port block 13. This design is such that the mounting surface lid of the inlet port block 3 on the processing chamber 11 is placed as shown in Figs. 1 to 3, and in this example, the surface of the lid body 1 1 c is flat. When there is unevenness on the mounting surface 1 1 d, it is necessary to match the unevenness to machine the lower surface of the introduction opening block 13. On the other hand, if the unevenness is removed from the mounting surface lid to make it flat, it is only necessary to apply a flat process to the lower surface of the inlet port block 13. It is also possible to suppress the increase in the cost of the product by doing so. Furthermore, the mounting surface 1 1 d is made flat, for example, the process gas of the inlet port block 13 is insulated or insulated, for example, even if the heat insulating material is inserted into the mounting surface lid, and When the inlet block 13 is between the lower side, it is also easy to process the heat insulating material 'effectively suppressing the product cost. Further, when the unevenness is removed from the mounting surface lid, even if the entire surface of the lid body 11c is not flattened, at least the portion on which the inlet port block 13 is placed is flat on the surface of the lid body He. Next, an example of formation of one of the inlet port blocks 13 will be described. φ Fig. 6 to Fig. 6D are cross-sectional views showing an example of formation of one of the inlet port blocks 13. First, as shown in Fig. 6A, a metal base material 13a which is the inlet port block 13 is prepared. An example of the metal base material 13a is made of aluminum or an aluminum alloy. Next, as shown in FIG. 6B, the gas introduction portions 12 connected to the metal base material 13a and the gas supply portions 22 are connected to the vertical gas flow paths 13bv-1 and 13bv-2. The rod heater has a vertical hole φ 13CV-1. The vertical gas flow paths 13bv-1, 13bv-2 and the rod heater insertion vertical holes 13CV-1 are formed in the height direction. The longitudinal gas flow paths 13bv-1 and 13bv-2 are formed on the way from the lower surface of the metal base material 13a to the base material 13a in this example, and the rod heater insertion vertical hole 13cv-1 is in this example from the metal. The upper surface of the base material 13a is formed on the way to the base material 13a. Next, as shown in Fig. 6C, a lateral gas flow path 1 3 bh is formed from the side surface of the metal base material 13a, and a rod heater insertion lateral hole 13 eh is formed. The lateral gas flow paths 13bh and 13ch are formed in the planar direction. The horizontal gas flow path 13bh passes through the upper ends of the longitudinal gas 1 3bv-1 and the 1 3bv-2.横-15-200947553 The gas flow path 13bh is formed from the side surface of the metal base material 13a to the base material 13a, and is formed in the present example to the vertical gas flow path 13bv_1. The rod heater insertion lateral hole 13ch is formed in the same manner as the lateral gas flow path 13bh along the lateral gas flow path l3bh', and is formed from the side surface of the metal base material 13a to the base material 13a, as shown in Fig. 6 As shown, one end of the sealing gas 24 is buried with the outside of the inlet port block 13 of the lateral gas flow path 13bh to seal one end of the horizontal gas flow path bh. Further, the rod heater 23 is inserted into the rod heater insertion lateral hole 13ch and the rod heater insertion vertical hole 13cv-1 0. Thus, the gas passage 13b of the introduction port block 13 can be longitudinally The gas flow paths 13bv-1, 13bv-2 and the lateral gas flow path 13bh are combined. Further, for example, by sealing one end of the lateral gas flow path 13bh by the sealing member 24, the introduction port block 13 having the gas flow path 13b can be formed, and the gas flow path is below the introduction port block 13, and one end can be It is connected to the gas introduction part 12, and the other end is connected to the gas supply part 22. In this example, the gas introduction unit 12 is connected to the vertical gas flow path 13bv-1, and the gas supply unit 22 is connected to the vertical gas flow path 1 3 b v - 2 . For example, in this way, the inlet port block 13 can be formed. The present invention has been described above by way of an embodiment, but the invention is not limited to the embodiment and can be variously modified. Further, in the embodiment of the invention, the above-described one embodiment is not the only embodiment. For example, in the above-described embodiment, although the substrate processing apparatus for processing the semiconductor crystal-16-200947553 is exemplified as the substrate processing apparatus, even for the processing of a flat panel display, for example, a glass substrate for a liquid crystal display device (LCD). Of course, a substrate processing apparatus such as a substrate for (FPD) can be applied. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing an example of a substrate processing apparatus according to an embodiment of the present invention. Φ Fig. 2 is a cross-sectional view taken along line 2-2 of Fig. 1. Fig. 3 is a cross-sectional view taken along line 3-3 of Fig. 1. Fig. 4A is a cross-sectional view showing an example of an inlet port block, and Fig. 4B is a cross-sectional view showing a gas pipe according to a reference example. Fig. 5 is a cross-sectional view showing a piping gas according to a reference example. Fig. 6 is a cross-sectional view showing an example of formation of one of the inlet port blocks. [Description of main component symbols] Φ 10: substrate processing apparatus 11 : processing chamber 1 2 : gas introduction section 13 : inlet port block 14 : process gas supply mechanism 1 5 : processing space 16 : mounting table 23 = heater (rod Heater) 24 : Sealing material-17-