CN101540281B

CN101540281B - Foundation plate disposing device

Info

Publication number: CN101540281B
Application number: CN2009101263836A
Authority: CN
Inventors: 津田荣之辅
Original assignee: Tokyo Electron Ltd
Current assignee: Tokyo Electron Ltd
Priority date: 2008-03-17
Filing date: 2009-03-10
Publication date: 2012-06-13
Anticipated expiration: 2029-03-10
Also published as: JP2009224590A; KR20090099478A; TW200947553A; TWI496213B; KR101124903B1; CN101540281A

Abstract

The invention provides a foundation plate disposing device which can reduce cost of products and makes maintenance move time-saving and labour-saving. The foundation plate disposing device comprises a disposing chamber (11) using a plurality of gases to dispose a foundation plate to be disposed; a gas conducting part (12) arranged in the disposing chamber (11) and conducting the plurality of gases into the disposing chamber (11); a gas inlet block (13) arranged on the disposing chamber (11). A plurality of gas flow channels (13b) conducting the plurality of gases into the gas conducting part (12) from a gas supplying mechanism (14), and a heater (23) heating gas flowing in at least one flow channel in the plurality of gas flow channels are arranged in the gas inlet block.

Description

Substrate board treatment

Technical field

The present invention relates to a kind of substrate board treatment that substrate is handled that is processed to semiconductor wafer etc.

Background technology

In the manufacturing process of semiconductor device,, form the technology of films such as dielectric film, metal film and metallic compound film in order to go up the formation integrated circuit as the semiconductor wafer (being designated hereinafter simply as wafer) that is processed substrate.Use film formation devices such as CVD device, PVD device, ALD device to carry out film forming handles as substrate board treatment.

Film formation device uses kinds of processes gas to form film.When being the insulating film of high dielectric constant (High-k film) that uses in the gate insulating film etc., use precursor (precursor), reducing agent, plasma with gas, additive etc. as process gas.As described in the patent documentation 1, process gas is supplied to the process gas importing portion of substrate board treatment from the process gas supply source through the gas pipe arrangement.

[patent documentation 1] special table 2007-530796 communique

Summary of the invention

The process gas that supplies to substrate board treatment carries out through the gas pipe arrangement, but the gas pipe arrangement not only needs conduit or pipeline, and the angle, the elbow that also need a plurality of for example direction transformations to use are used for T shape pipe and the cross tee of branch etc., various joints.Use welding automatically that these joints and conduit or pipeline are coupled together, and assemble processing.

So, the gas pipe arrangement needs a large amount of parts.Yet,, for example, also have to machine-shapings such as piping cover are complicated shape owing to the multiple parts of assembling processing make structure become complicated.In addition, though exist in the situation of the mantle heater (mantel header) that heating process gas is installed in the gas pipe arrangement,, also there is the situation of the mantle heater have to prepare special shape according to conduits structure.

For these reasons, the easy situation about raising of product cost that has substrate board treatment, for example film formation device etc.

Therefore in addition, owing to used multiple parts in the gas pipe arrangement, when maintenance, need spend great amount of labor and the time is used for dismounting, inspection part, re-assemblies.Therefore, this also is an impediment to the time saving and energy saving of maintenance.

In order to solve said problem, the substrate board treatment that a mode of the present invention relates to comprises: process chamber, and it uses multiple gases to implement to handle to being processed substrate; Gas importing portion, it is set in the above-mentioned process chamber, and above-mentioned multiple gases is imported in the above-mentioned process chamber; The air inlet piece; It is configured on the above-mentioned process chamber; Portion has above-mentioned multiple gases is imported the heater of the gas that flows in many gas flow paths and at least one stream of heating in these gas flow paths the above-mentioned gas importing portion from gas supply mechanism within it.

The present invention provides a kind of substrate board treatment, and this substrate board treatment can reduce product cost, and can make maintenance more time saving and energy saving.

Description of drawings

Fig. 1 is the plane graph of an example of the substrate board treatment that relates to of expression embodiment of the present invention.

Fig. 2 is the sectional view along 2-2 line among Fig. 1.

Fig. 3 is the sectional view along 3-3 line among Fig. 1.

Fig. 4 A is the sectional view of an example of expression air inlet piece (inlet block), and Fig. 4 B is the sectional view of the gas pipe arrangement that relates to of expression reference example.

Fig. 5 is the sectional view of the piping cover that relates to of expression reference example.

Fig. 6 is a sectional view that forms example of expression air inlet piece.

Symbol description

10 substrate board treatments

11 process chambers

12 gas importing portions

13 air inlet pieces

14 process gas feed mechanisms

15 processing spaces

Put platform in 16 years

23 heaters (heater air flow pressure switch rod)

24 encapsulants

Embodiment

Followingly an execution mode of the present invention is described with reference to accompanying drawing.In institute's drawings attached of institute's reference, to marking same reference marks with a part.In the present invention, expression is applicable to the situation that goes up film forming film formation device at semiconductor wafer (being designated hereinafter simply as wafer) as substrate board treatment.As an example of film formation device, can be the ALD device that on wafer, forms the insulating film of high dielectric constant of insulating film of high dielectric constant, for example hafnium system.But the present invention is not only applicable to the ALD device, can also be applicable to other film formation devices such as CVD device, PVD device.In addition, the present invention is not limited to film formation device, can also be to be applicable to other substrate board treatments such as Etaching device.

Fig. 1 is the plane graph of an example of the substrate board treatment that relates to of an expression execution mode of the present invention, and Fig. 2 is the sectional view along 2-2 line among Fig. 1, and Fig. 3 is the sectional view along 3-3 line among Fig. 1.

Like Fig. 1～shown in Figure 3, substrate board treatment 10 possesses: process chamber 11, and it uses process gas that wafer W is implemented film forming and handles; Gas importing portion 12, it is set in this process chamber 11, and process gas is imported in the process chamber 11; Air inlet piece 13, it is set on the above-mentioned process chamber 11, and process gas is imported the gas importing portion 12 from gas supply mechanism 14.

Process chamber 11 in this example mainly is made up of chamber 11a, the air exhaust loop 11b that is arranged on the gas in the discharge processing space 15 on the chamber 11a and the lid 11c that is arranged on the air exhaust loop 11b.

Have to carry in chamber 11a set inside and put carrying of wafer W and put platform 16, be provided with the portion of taking out of 17 that moves into that wafer W is moved into or taken out of the inside of process chamber 11 at the sidewall of chamber 11a.Carry and to put platform 16 and in chamber 11a, move up and down, thereby in chamber 11a side with handle between 15 sides of space and move up and down wafer W.

Air exhaust loop 11b has exhaust channel 18.Exhaust channel 18 is formed on the top of chamber 11a in the form of a ring, in the present example with encirclement be processing cylindraceous space 15 around mode form.At least one place of exhaust channel 18 is connected with not shown exhaust gears such as exhaust pump.Between exhaust channel 18 and processing space 15, be provided with the baffle ring 19 of sidewall shape.On baffle ring 19, be formed with and handle a plurality of steam vent 19a that the process gas in the space 15 carries out exhaust being released to.

Lid 11c is arranged on the air exhaust loop 11b.Handling space 15 is put platform 16 and is surrounded and form by baffle ring 19 in lid 11c, air exhaust loop 11b, this example and the carrying of bottom that rise to baffle ring 19.In the present example, handle space 15 and form, but the generation type in processing space 15 is not limited thereto by aforesaid mode.Also can make and do not have air exhaust loop 11b, discharge process gas, form the general structure of processing space 15 that kind by chamber 11a and lid 11c from the below of chamber 11a.

Processing space 15 sides of lid 11c are provided with epipleural 20a and lower side panel 20b.The surperficial discoid depression of processing space 15 sides of lower side panel 20b is provided with the gas of emitting process gas in the middle and emits portion 21.It is hemispheres that the gas of this example is emitted portion 21.But the gas portion of emitting is not limited to hemisphere, also can be other any one shape, for example sprays capitiform etc.

Gas importing portion 12 imports to the part that gas is emitted portion 21 with the process gas that imports through air inlet piece 13.In the present example, gas importing portion 12 forms as gas flow path in lid 11c, epipleural 20a and lower side panel 20b.

Each formation portion of control assembly 50 control basal plate processing unit 10.Control assembly 50 possesses: process controller 51, and it is made up of the microprocessor (computer) of carrying out the control that respectively constitutes portion; User interface 52, the keyboard of the input operation that it is instructed in order to manage substrate board treatment 10 by the operator etc. and formations such as the display operating state of substrate board treatment 10 is visual and that show; And storage part 53; It is used for storage scheme; The control program of the various processing that the control through process controller 51 just realizes carrying out in the substrate board treatment 10 and the program of each formation portion of processing unit being handled according to various data and treatment conditions.User interface 52 is connected with process controller 51 with storage part 53.Scheme is stored in the storage medium in the storage part 53.Storage medium can be a hard disk, also can be movably storage medium such as CD-ROM, DVD, flash memories.In addition, for example also can from other device scheme suitably be sent to the storage medium through special circuit.Scheme can access from storage part 53 according to the indication from user interface 52 as required arbitrarily, and is carried out by process controller 51, and thus, substrate board treatment 10 carries out desired processing substrate under the control of process controller 51.

Air inlet piece 13 is the parts that process gas imported above-mentioned gas importing portion 12 from the gas supply part 22 of receiving process gas through process chamber 11; Above-mentioned gas supply unit 22 is set on the process chamber 11, receives the process gas of supplying with from process gas supply unit 14.This part constituted through the gas pipe arrangement being assembled processing in the past, but the gas pipe arrangement is made up of a piece (one article) in the present example.One example of piece is a metal, and an example of metal is the good aluminium of conductivity of heat.This piece is called as air inlet piece 13 in this manual.What Fig. 4 A represented is an example of air inlet piece 13.What in addition, illustration 4B represented as a reference is the example of gas pipe arrangement.Fig. 4 A and Fig. 4 B are respectively sectional view.

Shown in Fig. 4 A, air inlet piece 13 for example has metallic mother metal 13a, and has the internal openings at this metallic mother metal 13a, for example metallic mother metal 13a is scraped out hollow and the gas flow path 13b that forms.In the present example, can have 4 gas flow path 13b, will import to gas importing portion 12 from gas supply part 22 at 4 kinds of process gass that process gas feed mechanism 14 produces.In 4 gas flow path 13b, can use precursor, reducing agent, plasma with gas, additive etc. as process gas.Example as the film that uses these process gas film forming can be enumerated insulating film of high dielectric constant, for example is the dielectric film of hafnium system.

Reference example shown in Fig. 4 B imports to gas importing portion 12 with 4 kinds of process gass from gas supply part 22 through 4 gas pipe arrangements 113 too.But many gas pipe arrangement 113 forms through interconnect conduit 113a and joint 113b, and this joint 113b is connected with a plurality of conduit 113a each other.Therefore, need a plurality of parts.

Relative therewith, in an example shown in Fig. 4 A, because many gas flow path 13b form through the inside opening at metallic mother metal 13a, so parts can be metallic mother metal 13a basically.Can reduce number of components thus, reduce product cost.

In addition because number of components reduces, with respect to the many situation of number of components, the present invention dismantle for maintenance, more easy when parts are checked, re-assembly etc.The present invention can realize the time saving and energy saving of maintenance thus.For example, in this example,, unload air inlet piece 13 from process chamber 11 and get final product,, air inlet piece 13 is installed on the process chamber 11 gets final product for re-assemblying for dismounting.

In addition, in the reference example shown in Fig. 4 B, conduit 113a and joint 113b use welding automatically and link together.In reference example, 4 gas pipe arrangements 113 are configured on the short transverse, but when being configured in many gas pipe arrangements 113 on the short transverse, have to gas pipe arrangement 113 is separated the interval d that can put into automatic welding machine each other.Thus, the height h of gas pipe arrangement 113 becomes higher, thereby has hindered the miniaturization of substrate board treatment.

Relative therewith, in an example shown in Fig. 4 A, many gas flow path 13b that on short transverse, dispose form through the internal openings at metallic mother metal 13a, therefore when forming gas flow path 13b, do not need automatic welder.Therefore, even on short transverse, dispose many gas flow path 13b, compare with gas pipe arrangement 113, gas flow path 13b interval d each other also can be provided with narrowlyer.Therefore, compare with the substrate board treatment of using gases pipe arrangement 113, substrate board treatment of the present invention more can be realized miniaturization.

So, according to an execution mode, through possessing air inlet piece 13, the present invention compares with the substrate board treatment of using gases pipe arrangement 113, more can realize reducing product cost, and makes maintenance more time saving and energy saving.

And then; According to an execution mode, many gas flow path 13b are set to multilayer along short transverse, and the present invention compares with the substrate board treatment of using gases pipe arrangement 113; Can make gas flow path 13b interval d each other narrower, can make substrate board treatment miniaturization more.

But, in process gas, there is the situation that makes liquid gasify and produce owing to heating in process gas feed mechanism 14, in addition, also exist in order to produce reaction etc. and need process gas to be heated to proper temperature in 15 inside, processing space.Must heat these process gass, make its temperature in through the process of gas pipe arrangement not descend.Based on this viewpoint, in the device of using gases pipe arrangement 113, with aluminum piping cover blanket gas pipe arrangement 113, at the outer coiling mantle heater of piping cover, heated air pipe arrangement 113.Example is represented piping cover in Fig. 5 A～Fig. 5 C as a reference.Fig. 5 A is a sectional view, and Fig. 5 B is the sectional view along the 5B-5B line among Fig. 5 A, and Fig. 5 C is the stereogram that is illustrated in the state of coiling mantle heater on the piping cover.

Shown in Fig. 5 A～Fig. 5 C, have on piping cover 114 to form the part 114a through conduit 113a and accommodate the part 114b etc. of joint 113b.Therefore, the shape of piping cover 114 becomes complicated and makes processing become difficult.In addition, also exist in the bend processing difficulties part of grading, prepare the piping cover that sweep is used, the situation that the piping cover that itself and straight line portion are used is connected.Through using piping cover like this, number of components further increases, and product cost is improved.

Relative therewith, in an example shown in Fig. 4 A,, therefore do not need piping cover because metallic mother metal 13a originally is formed with gas flow path 13b on one's body.Because the present invention does not need piping cover, therefore compare with the substrate board treatment that needs piping cover, the present invention can suppress the raising of product cost.

In addition, in one embodiment,, be provided with heater in the inside of air inlet piece 13 for heated air stream 13b.In the present example, like Fig. 1～shown in Figure 3, use be heater air flow pressure switch rod 23, its shape is compared comparatively simple with mantle heater, and more cheap.Heater air flow pressure switch rod 23 can for example use the calandria of built-in nichrome wire etc. as calandria in metal shell (sheath).Because heater air flow pressure switch rod 23 is located at the inside of air inlet piece 13; So in the present example; For example shown in Fig. 4 A, the linearity perforate has the heater air flow pressure switch rod insertion to use hole 13c on metallic mother metal 13a, and in heater air flow pressure switch rod inserts with hole 13c, inserts heater air flow pressure switch rod 23.

In addition, in the present example, the combination of vertical gas flow path 13bv that gas flow path 13b is formed by the short transverse at air inlet piece 13 and the horizontal gas flow path 13bh that forms at the in-plane of air inlet piece 13 and constituting.As the formation example of the insertion of the heater air flow pressure switch rod in this formation, can form the heater air flow pressure switch rod insertion in the present example and use cross-drilled hole 13ch with vertical hole 13cv and heater air flow pressure switch rod insertion with hole 13c.

Heater air flow pressure switch rod insert with vertical hole 13cv longitudinally gas flow path 13bv on the short transverse of air inlet piece 13, form, heater air flow pressure switch rod inserts with cross-drilled hole 13ch and forms on the in-plane of air inlet piece along horizontal gas flow path 13bh.Because heater air flow pressure switch rod inserts the gas flow path 13bv formation longitudinally with vertical hole 13cv; Heater air flow pressure switch rod inserts with cross-drilled hole 13ch along laterally gas flow path 13bh formation; Even therefore use heater air flow pressure switch rod, also can be with the process gas that in vertical gas flow path 13bv, flows and all heating efficiently of the process gas that in horizontal gas flow path 13bh, flows.In addition, in order to heat effectively, also can on metallic mother metal 13a, select material with good heat conductivity.Material with good heat conductivity can be aluminium or the alloy that contains aluminium.

In addition, laterally gas flow path 13bh compares with vertical gas flow path 13bv apart from elongated easily.For the horizontal gas flow path 13bh of distance, heat through using the long heater air flow pressure switch rod of length, compare with the situation of vertical hole 13cv with only forming the heater air flow pressure switch rod insertion, have the advantage of the bar number that can reduce heater air flow pressure switch rod.

In addition, also can on air inlet piece 13, paste planar heater, for example mica heater etc.But planar heater is compared price with heater air flow pressure switch rod more expensive.Therefore, from this viewpoint, use heater air flow pressure switch rod to be of value to the inhibition product cost.

So, in this example,, be easy to obtain heating needed structure even under the situation of the process gas that use need be heated, compare with the substrate board treatment of using gases pipe arrangement 113.

And then, in one embodiment, easy processing gas inlet piece 13 is worked hard.This under time, like Fig. 1～shown in Figure 3, refer to and make carrying on process chamber 11 put carrying of air inlet piece 13 to put face 11d, just the surface of the lid 11c in this example becomes smooth.If carry put exist on the face 11d concavo-convex, must contrast so this concavo-convex come processing gas inlet piece 13 below.

Relative therewith, if it is put face 11d and remove concavo-convex and make it become smooth, then smooth just passable with being machined to below the air inlet piece 13 from carrying.Can suppress the raising of product cost based on this formation.

In addition; In order just to make process gas insulation through air inlet piece 13 or adiabatic and carrying under the situation such as inserting heat-insulating material between putting below face 11d and the air inlet piece 13; Put face 11d and become smooth and can make the processing of heat-insulating material more easy carrying, to help suppressing product cost.

In addition,, need not make the whole surface of lid 11c all become smooth, make at least and carry the part of putting air inlet piece 13 among the surface of lid 11c and become smooth and get final product put face 11d and remove when concavo-convex from carrying.

Then, one of air inlet piece 13 being formed example describes.

Fig. 6 A～Fig. 6 D is the sectional view that one of expression air inlet piece 13 forms example.

At first, shown in Fig. 6 A, prepare to make the metallic mother metal 13a of air inlet piece 13.Metallic mother metal 13a can be aluminum or the alloy system that contains aluminium.

Next, shown in Fig. 6 B,,, form vertical gas flow path 13bv-1,13bv-2 and heater air flow pressure switch rod and insert with vertical hole 13cv-1 with the place that is connected with gas supply part 22 in the place that is connected with gas importing portion 12 of metallic mother metal 13a.Vertically gas flow path 13bv-1,13bv-2 and heater air flow pressure switch rod insert and are formed on the short transverse with vertical hole 13cv-1.Vertically gas flow path 13bv-1,13bv-2 below metallic mother metal 13a, be formed up in the present example mother metal 13a midway till, heater air flow pressure switch rod insert with vertical hole 13cv-1 above metallic mother metal 13a, be formed up in the present example mother metal 13a midway till.

Next, shown in Fig. 6 C, form horizontal gas flow path 13bh and heater air flow pressure switch rod from the side of metallic mother metal 13a and insert and use cross-drilled hole 13ch.Laterally gas flow path 13bh and 13ch are formed on the in-plane.Laterally gas flow path 13bh is through the upper end of vertical gas flow path 13bv-1 and 13bv-2.Laterally gas flow path 13bh from the side of metallic mother metal 13a be formed up to mother metal 13a midway till, be formed up in the present example till vertical gas flow path 13bv-1.Heater air flow pressure switch rod inserts with cross-drilled hole 13ch along horizontal gas flow path 13bh, and is the same with horizontal gas flow path 13bh, from the side of metallic mother metal 13a be formed up to mother metal 13a midway till.

Next, shown in Fig. 6 D, an end of the outside of passing through air inlet piece 13 of horizontal gas flow path 13bh is filled with encapsulant 24, with the end sealing of horizontal gas flow path 13bh.And then, heater air flow pressure switch rod 23 is inserted the heater air flow pressure switch rod insertion insert with among the vertical hole 13cv-1 with cross-drilled hole 13ch and heater air flow pressure switch rod.

So, the gas flow path 13b of air inlet piece 13 can constitute through the combination of vertical gas flow path 13bv-1,13bv-2 and horizontal gas flow path 13bh.

In addition, for example possess below air inlet piece 13 through sealing the end of horizontal gas flow path 13bh with encapsulant 24, can forming, an end is connected with gas importing portion 12, the air inlet piece 13 of the gas flow path 13b that the other end is connected with gas supply part 22.In the present example, vertically gas flow path 13bv-1 is connected with gas importing portion 12, and vertically gas flow path 13bv-2 is connected with gas supply part 22.For example can form air inlet piece 13 thus.

More than describe the present invention through an execution mode, but the present invention is not limited in an execution mode, can carry out various distortion.In addition, above-mentioned execution mode is not unique execution mode of execution mode of the present invention.

For example; In an above-mentioned execution mode; Is that example is illustrated as substrate board treatment with the substrate board treatment of process semiconductor wafers; But the present invention can also be applicable to and for example handle the glass substrate that uses with liquid crystal indicator (LCD) substrate board treatment as substrate of flat-panel monitor (FPD) usefulness of representative etc. that this is self-evident.

Claims

1. a substrate board treatment is characterized in that, comprising:

Process chamber, it uses multiple gases to implement to handle to being processed substrate;

Gas importing portion, it is set in the said process chamber, and said multiple gases is imported in the said process chamber;

The air inlet piece; It is configured on the said process chamber; Portion has said multiple gases is imported the heater of the gas that flows in many gas flow paths and at least one stream of heating in these gas flow paths the said gas importing portion from gas supply mechanism within it.

2. substrate board treatment according to claim 1 is characterized in that:

On the short transverse of said air inlet piece, be provided with the said gas flow path of multilayer.

3. substrate board treatment according to claim 1 is characterized in that:

Said heater is a heater air flow pressure switch rod,

Said air inlet piece has the heater air flow pressure switch rod insertion and uses the hole,

Said heater air flow pressure switch rod is inserted in said heater air flow pressure switch rod and inserts with in the hole.

4. substrate board treatment according to claim 1 is characterized in that:

Said gas flow path constitutes through the combination at vertical gas flow path that forms on the short transverse of said air inlet piece and the horizontal gas flow path that on the in-plane of said air inlet piece, forms.

5. substrate board treatment according to claim 4 is characterized in that:

Said heater is a heater air flow pressure switch rod,

Said air inlet piece has the said vertical gas flow path in edge and uses cross-drilled hole in the heater air flow pressure switch rod insertion that forms on the short transverse of said air inlet piece with vertical hole with along the heater air flow pressure switch rod insertion that said horizontal gas flow path forms on the in-plane of said air inlet piece,

Said heater air flow pressure switch rod is inserted in said heater air flow pressure switch rod and inserts with indulging the insertion of hole and said heater air flow pressure switch rod with in the cross-drilled hole.

6. substrate board treatment according to claim 1 is characterized in that:

The carrying of said process chamber put carrying of said air inlet piece, and to put face be smooth.

7. substrate board treatment according to claim 1 is characterized in that:

Said air inlet piece is aluminum or the alloy system that contains aluminium.

8. substrate board treatment according to claim 1 is characterized in that:

Said substrate board treatment is to be processed film forming device on the substrate said.

9. substrate board treatment according to claim 8 is characterized in that:

Said film forming device is to use the ALD method to form the device of said film.

10. substrate board treatment according to claim 1 is characterized in that:

Said gas flow path constitutes at first, second the vertical gas flow path that forms on the short transverse of said air inlet piece and the combination of 1 horizontal gas flow path that on the in-plane of said air inlet piece, forms through at least 2 at least.

11. substrate board treatment according to claim 10 is characterized in that:

One end of said first vertical gas flow path is communicated with a place of said horizontal gas flow path; The other end of said first vertical gas flow path and the external communications of said air inlet piece; The other end of said first vertical gas flow path is accepted the supply of gas from said gas supply mechanism

One end of said second vertical gas flow path is communicated with another place of said horizontal gas flow path, the other end of said second vertical gas flow path and the external communications of said air inlet piece, and the other end of said second vertical gas flow path is connected with said gas importing portion,

At least one end of said horizontal gas flow path and the external communications of said air inlet piece, an end of said horizontal gas flow path seals with encapsulant.