TWI494991B - - Google Patents

Info

Publication number
TWI494991B
TWI494991B TW101145142A TW101145142A TWI494991B TW I494991 B TWI494991 B TW I494991B TW 101145142 A TW101145142 A TW 101145142A TW 101145142 A TW101145142 A TW 101145142A TW I494991 B TWI494991 B TW I494991B
Authority
TW
Taiwan
Application number
TW101145142A
Other versions
TW201342457A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW201342457A publication Critical patent/TW201342457A/zh
Application granted granted Critical
Publication of TWI494991B publication Critical patent/TWI494991B/zh

Links

TW101145142A 2012-03-21 2012-11-30 通孔側壁形貌修飾方法 TW201342457A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210077037.5A CN102610560B (zh) 2012-03-21 2012-03-21 通孔侧壁形貌修饰方法

Publications (2)

Publication Number Publication Date
TW201342457A TW201342457A (zh) 2013-10-16
TWI494991B true TWI494991B (zh) 2015-08-01

Family

ID=46527845

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101145142A TW201342457A (zh) 2012-03-21 2012-11-30 通孔側壁形貌修飾方法

Country Status (2)

Country Link
CN (1) CN102610560B (zh)
TW (1) TW201342457A (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681301B (zh) * 2012-09-17 2016-08-17 上海华虹宏力半导体制造有限公司 改善沟槽侧壁扇贝形貌的干法刻蚀工艺方法
CN104576506A (zh) * 2013-10-22 2015-04-29 中微半导体设备(上海)有限公司 一种刻蚀硅通孔的方法
CN104089572B (zh) * 2014-04-10 2016-12-07 北京大学 一种利用电容变化检测刻蚀侧壁粗糙的方法
CN105575787B (zh) * 2014-10-16 2018-02-16 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
CN105762107A (zh) * 2014-12-18 2016-07-13 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102315157A (zh) * 2010-08-11 2012-01-11 上海集成电路研发中心有限公司 一种tsv通孔形成方法和tsv通孔修正方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4812512B2 (ja) * 2006-05-19 2011-11-09 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
KR100875130B1 (ko) * 2007-07-05 2008-12-22 한국광기술원 산화 확산 및 제거에 의한 실리콘 식각면 개질 방법
KR20110069288A (ko) * 2009-12-17 2011-06-23 한국전자통신연구원 관통형 실리콘 비아 형성 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102315157A (zh) * 2010-08-11 2012-01-11 上海集成电路研发中心有限公司 一种tsv通孔形成方法和tsv通孔修正方法

Also Published As

Publication number Publication date
CN102610560A (zh) 2012-07-25
TW201342457A (zh) 2013-10-16
CN102610560B (zh) 2014-03-05

Similar Documents

Publication Publication Date Title
BR112014017635A2 (zh)
BR112014017614A2 (zh)
BR112014017625A2 (zh)
BR112014017592A2 (zh)
BR112014017659A2 (zh)
BR112014017646A2 (zh)
BR112014017638A2 (zh)
BR112014017607A2 (zh)
BR112014018157A2 (zh)
BR112014017634A2 (zh)
BR112014017609A2 (zh)
BR112014017644A2 (zh)
BR112014017647A2 (zh)
BR112014017618A2 (zh)
BR112014017630A2 (zh)
BR112014017652A2 (zh)
BR112014017621A2 (zh)
BR112014017622A2 (zh)
BR112014017627A2 (zh)
BR112014017623A2 (zh)
BR112014019599A2 (zh)
BR112014017641A2 (zh)
BR112014017631A2 (zh)
BR112014017636A2 (zh)
BR112014017667A2 (zh)