TWI492317B - The method of detecting the relative position of the grain adapter and the bonding tool and the semiconductor grain - Google Patents

The method of detecting the relative position of the grain adapter and the bonding tool and the semiconductor grain Download PDF

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TWI492317B
TWI492317B TW102124688A TW102124688A TWI492317B TW I492317 B TWI492317 B TW I492317B TW 102124688 A TW102124688 A TW 102124688A TW 102124688 A TW102124688 A TW 102124688A TW I492317 B TWI492317 B TW I492317B
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bonding tool
image
semiconductor die
camera
adsorption surface
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TW102124688A
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TW201413838A (en
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Masahito Tuji
Okito Umehara
Keiichi Hiruma
Akira Urahashi
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Shinkawa Kk
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757Means for aligning
    • H01L2224/75743Suction holding means
    • H01L2224/75745Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757Means for aligning
    • H01L2224/75753Means for optical alignment, e.g. sensors

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Supply And Installment Of Electrical Components (AREA)

Description

晶粒接合器及接合工具與半導體晶粒之相對位置之檢測方法Method for detecting relative position of die bonder and bonding tool and semiconductor die

本發明係關於一種晶粒接合器之構造、及接合工具與吸附在接合工具前端之半導體晶粒之相對位置之檢測方法。The present invention relates to a construction of a die bonder and a method of detecting the relative position of a bonding tool to a semiconductor die adsorbed at the front end of the bonding tool.

作為將半導體晶粒接合於引腳架等電路基板之裝置,大多使用晶粒接合器。晶粒接合器使吸附保持在接合工具前端之半導體晶粒朝向吸附固定在接合載台上之電路基板表面下降,將半導體晶粒接合於電路基板上。As a device for bonding a semiconductor die to a circuit board such as a lead frame, a die bonder is often used. The die bonder lowers the semiconductor die held by the front end of the bonding tool toward the surface of the circuit substrate adsorbed and fixed on the bonding stage, and bonds the semiconductor die to the circuit substrate.

在晶粒接合器,必須在使吸附在接合工具之半導體晶粒之位置對準電路基板之接合位置之狀態下將半導體晶粒按壓至電路基板。因此,在以接合工具移送半導體晶粒時,係採用取得吸附在接合工具之半導體晶粒背面之影像後,根據半導體晶粒背面之對準標記進行使半導體晶粒與電路基板之相對位置一致的方法(例如,參照專利文獻1)。In the die bonder, the semiconductor die must be pressed to the circuit substrate in a state where the position of the semiconductor die adhered to the bonding tool is aligned with the bonding position of the circuit substrate. Therefore, when the semiconductor die is transferred by the bonding tool, the image obtained by adsorbing on the back surface of the semiconductor die of the bonding tool is used, and the relative positions of the semiconductor die and the circuit substrate are aligned according to the alignment mark on the back surface of the semiconductor die. Method (for example, refer to Patent Document 1).

然而,專利文獻1記載之方法,在取得影像時必須使半導體晶粒之移送暫時停止,會有作業時間變長之問題。因此,提出了一種在半導體晶粒之移載頭透過L字狀之連接構件固定具有反射鏡與矩形狀貫通孔之基準構件,以移載頭搬送半導體晶粒時,在無需暫時停止搬送的狀態下取得拍攝半導體晶粒之第1影像資料與拍攝基準構件之第2影像資料,並將此二個影像資料重疊,以檢測半導體晶粒相對於基準構件之位置,依據 檢測結果修正半導體晶粒搭載於電路基板之位置的方法(例如,參照專利文獻2)。However, in the method described in Patent Document 1, when the image is acquired, it is necessary to temporarily stop the transfer of the semiconductor crystal grains, and there is a problem that the working time becomes long. Therefore, it is proposed that a reference member having a mirror and a rectangular through-hole is fixed to a transfer head of a semiconductor die through an L-shaped connecting member, and when the semiconductor die is transported by the transfer head, there is no need to temporarily stop the transfer. Obtaining a first image data of the semiconductor die and a second image data of the imaging reference member, and superimposing the two image data to detect the position of the semiconductor die relative to the reference member, The detection result corrects the method in which the semiconductor die is mounted on the circuit board (for example, refer to Patent Document 2).

專利文獻1:日本特開2010-40738號公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2010-40738

專利文獻2:日本特開2007-115851號公報Patent Document 2: Japanese Patent Laid-Open Publication No. 2007-115851

然而,專利文獻2記載之習知技術,由於必須將基準構件配置在不妨礙接合之位置,因此必須使基準構件至攝影機之光路與至吸附在移載頭前端之半導體晶粒之光路為不同光路。另一方面,為了同時拍攝基準構件之影像與吸附在移載頭前端之半導體晶粒之影像,必須以二個光路合而為一之方式構成光路。又,必須使基準構件至攝影機之光路長與半導體晶粒表面至攝影機之光路長相等以使基準構件與半導體晶粒之影像之焦點一致。因此,必須在光學系大量使用半反射鏡或稜鏡,會有光學系之構成變複雜之問題。However, in the conventional technique described in Patent Document 2, since it is necessary to arrange the reference member at a position that does not interfere with the bonding, it is necessary to make the optical path of the reference member to the camera and the optical path of the semiconductor die adsorbed to the tip end of the transfer head different light paths. . On the other hand, in order to simultaneously capture the image of the reference member and the image of the semiconductor die adsorbed on the front end of the transfer head, it is necessary to form the optical path by combining the two optical paths. Further, it is necessary to make the optical path length of the reference member to the camera equal to the optical path length of the semiconductor die surface to the camera so that the reference member coincides with the focus of the image of the semiconductor die. Therefore, it is necessary to use a half mirror or a cymbal in a large amount in the optical system, which may cause a problem that the configuration of the optical system becomes complicated.

又,專利文獻2記載之習知技術,由於藉由連接構件將基準構件安裝在移載頭,基準構件因移載頭之往復移動而振動,會有因此導致之檢測誤差產生半導體晶粒之位置偏移之情形之問題(參照專利文獻2、段落0096)。Further, in the conventional technique described in Patent Document 2, since the reference member is attached to the transfer head by the connecting member, the reference member vibrates due to the reciprocating movement of the transfer head, and thus the detection error causes the position of the semiconductor die. The problem of the case of offset (refer to Patent Document 2, paragraph 0096).

因此,本發明之目的在於以簡便構成有效地檢測接合工具與半導體晶粒之位置偏移。Accordingly, an object of the present invention is to effectively detect the positional deviation of a bonding tool and a semiconductor die with a simple configuration.

本發明之晶粒接合器,包含:接合工具;光源;攝影機;以及反射體;接合工具具備吸附半導體晶粒之前端吸附面、較前端吸附面粗之基部、及連接吸附面與基部且相對於長邊方向中心線傾斜之傾斜面;光 源係配置在接合工具之吸附面側;攝影機同時取得吸附在吸附面之半導體晶粒之影像與反射體之影像與接合工具之傾斜面之影像;反射體與接合工具之基部相鄰,從吸附面離開攝影機之焦點深度以上而配置在接合工具之長邊方向,且不會在與接合工具之間相對移動,將來自光源之光至少反射至接合工具之吸附面側。The die bonder of the present invention comprises: a bonding tool; a light source; a camera; and a reflector; the bonding tool has a base for adsorbing the front end of the semiconductor die, a base thicker than the front end adsorption surface, and a connection between the adsorption surface and the base and opposite to Inclined surface of the center line of the long side direction; light The source system is disposed on the adsorption surface side of the bonding tool; the camera simultaneously obtains an image of the image of the semiconductor die adsorbed on the adsorption surface and the image of the reflector and the inclined surface of the bonding tool; the reflector is adjacent to the base of the bonding tool, and is adsorbed The surface is disposed above the focal depth of the camera and disposed in the longitudinal direction of the bonding tool, and does not move relative to the bonding tool, and reflects light from the light source to at least the adsorption surface side of the bonding tool.

本發明之晶粒接合器,較佳為,進一步包含影像處理部;影像處理部處理攝影機所取得之反射體之影像、攝影機所取得之接合工具之傾斜面之影像、及攝影機所取得之半導體晶粒之影像,檢測接合工具與半導體晶粒之相對位置。Preferably, the die attachor of the present invention further includes an image processing unit; the image processing unit processes the image of the reflector obtained by the camera, the image of the inclined surface of the bonding tool obtained by the camera, and the semiconductor crystal obtained by the camera. The image of the particle is used to detect the relative position of the bonding tool to the semiconductor die.

本發明之晶粒接合器中,較佳為,反射體為把持接合工具之曲柄、或安裝在接合工具之環、或與接合工具之基部相鄰之段部,具有相對於接合工具之長邊方向中心線垂直之反射面;反射面為曲柄之吸附面側之端面、或環之吸附面側之端面、或段部之端面。In the die bonder of the present invention, preferably, the reflector is a crank for holding the bonding tool, or a ring attached to the bonding tool or a portion adjacent to the base of the bonding tool, and has a long side with respect to the bonding tool. A reflecting surface perpendicular to the center line; the reflecting surface is an end surface of the adsorption side of the crank, or an end surface of the adsorption side of the ring, or an end surface of the segment.

本發明之晶粒接合器中,較佳為,接合工具與半導體晶粒之相對位置,係接合工具之長邊方向中心線之吸附面上之位置與半導體晶粒之中心之吸附面上之位置之間之偏移量、或半導體晶粒相對於吸附面上之基準軸之傾斜角度之任一者或兩者。In the die bonder of the present invention, preferably, the position of the bonding tool and the semiconductor die is the position on the adsorption surface of the center line in the longitudinal direction of the bonding tool and the position on the adsorption surface of the center of the semiconductor die. Either or both of the offset, or the angle of inclination of the semiconductor die relative to the reference axis of the adsorption face.

本發明之晶粒接合器中,較佳為,進一步包含:移動機構;以及控制部;移動機構使接合工具移動;控制部藉由移動機構使接合工具移動,接合工具從半導體晶粒之拾取位置到達與接合位置間之既定位置時使光源發光,一邊使接合工具移動一邊藉由攝影機同時取得吸附在吸附面之半導體晶粒之影像與接合工具之傾斜面之影像與反射體之影像。In the die bonder of the present invention, preferably, the die attachor further includes: a moving mechanism; and a control unit; the moving mechanism moves the bonding tool; and the control unit moves the bonding tool by the moving mechanism, and the bonding tool picks up the position from the semiconductor die When the predetermined position is reached between the bonding position and the bonding position, the light source is illuminated, and the image of the semiconductor die adsorbed on the adsorption surface and the image of the inclined surface of the bonding tool and the image of the reflector are simultaneously acquired by the camera while moving the bonding tool.

本發明之晶粒接合器中,較佳為,進一步包含:移動機構;以及控制部;移動機構使接合工具移動;控制部藉由移動機構使接合工具之位置變化,且根據影像處理部檢測出之接合工具與半導體晶粒之相對位置修正接合工具之位置。Preferably, the die attachor of the present invention further includes: a moving mechanism; and a control unit; the moving mechanism moves the bonding tool; and the control unit changes the position of the bonding tool by the moving mechanism, and detects the image according to the image processing unit The position of the bonding tool and the semiconductor die corrects the position of the bonding tool.

本發明之位置檢測方法,係在晶粒接合器中檢測接合工具與半導體晶粒之相對位置,其特徵在於,包含:影像取得步驟;以及相對位置檢測步驟;晶粒接合器具備接合工具、配置在接合工具之吸附面側之光源、不會在與接合工具之間相對移動且將來自光源之光反射至接合工具之吸附面側之反射體、及同時取得吸附在吸附面之半導體晶粒之影像與反射體之影像與接合工具之傾斜面之影像之攝影機,該接合工具具有吸附半導體晶粒之前端吸附面、較前端吸附面粗之基部、及連接吸附面與基部且相對於長邊方向中心線傾斜之傾斜面,反射體與接合工具之基部相鄰,從吸附面離開攝影機之焦點深度以上而配置在接合工具之長邊方向,包含相對於接合工具之長邊方向中心線垂直之反射面;影像取得步驟,藉由攝影機同時取得吸附在吸附面之半導體晶粒之影像與反射體之影像與接合工具之傾斜面之影像;相對位置檢測步驟,從攝影機所取得之反射體之影像、攝影機所取得之接合工具之傾斜面之影像、及攝影機所取得之半導體晶粒之影像,檢測接合工具與半導體晶粒之相對位置。The position detecting method of the present invention detects the relative position of the bonding tool and the semiconductor die in the die bonder, and includes: an image obtaining step; and a relative position detecting step; the die bonder is provided with a bonding tool and a configuration a light source on the adsorption surface side of the bonding tool, a reflector that does not move relative to the bonding tool, and reflects light from the light source to the adsorption surface side of the bonding tool, and simultaneously acquires the semiconductor die adsorbed on the adsorption surface. a camera for capturing an image of an image and a reflector and an image of an inclined surface of the bonding tool, the bonding tool having a base for adsorbing the front end of the semiconductor die, a base thicker than the front end of the adsorption surface, and connecting the adsorption surface and the base with respect to the longitudinal direction The inclined surface of the center line is inclined, and the reflector is adjacent to the base of the bonding tool, and is disposed in the longitudinal direction of the bonding tool from the depth of focus of the camera from the adsorption surface, and includes a reflection perpendicular to the center line of the longitudinal direction of the bonding tool. Image acquisition step, by which the image of the semiconductor die adsorbed on the adsorption surface is simultaneously obtained by the camera The image of the reflector and the image of the inclined surface of the bonding tool; the relative position detection step, the image of the reflector obtained from the camera, the image of the inclined surface of the bonding tool obtained by the camera, and the image of the semiconductor die obtained by the camera Detecting the relative position of the bonding tool to the semiconductor die.

本發明之位置檢測方法中,較佳為,接合工具與半導體晶粒之相對位置,係接合工具之長邊方向中心線之吸附面上之位置與半導體晶粒之中心之吸附面上之位置之間之偏移量、或半導體晶粒相對於吸附面上之基準軸之傾斜角度之任一者或兩者。In the position detecting method of the present invention, preferably, the position of the bonding tool and the semiconductor die is a position on the adsorption surface of the center line in the longitudinal direction of the bonding tool and the position on the adsorption surface of the center of the semiconductor die. Either or both of the offset, or the angle of inclination of the semiconductor die relative to the reference axis on the adsorption face.

本發明之位置檢測方法中,較佳為,晶粒接合器進一步具備使接合工具移動之移動機構;影像取得步驟,藉由移動機構使接合工具移動,接合工具從半導體晶粒之拾取位置到達與接合位置間之既定位置時使光源發光,一邊使接合工具移動一邊藉由攝影機同時取得吸附在吸附面之半導體晶粒之影像與反射體之影像與接合工具之傾斜面之影像。In the position detecting method of the present invention, preferably, the die bonder further includes a moving mechanism for moving the bonding tool; and the image capturing step of moving the bonding tool by the moving mechanism, and the bonding tool reaches from the pickup position of the semiconductor die When the predetermined position between the joint positions is made, the light source is caused to emit light, and the image of the semiconductor crystal grain adsorbed on the adsorption surface and the image of the reflector and the inclined surface of the bonding tool are simultaneously acquired by the camera while moving the bonding tool.

本發明可達到能以簡便構成有效地檢測接合工具與半導體晶粒之位置偏移之效果。The present invention achieves an effect of effectively detecting the positional deviation of the bonding tool and the semiconductor die with a simple configuration.

10‧‧‧晶粒接合器10‧‧ ‧ die bonder

11‧‧‧導軌11‧‧‧ Guide rail

12‧‧‧X方向移動機構12‧‧‧X direction moving mechanism

13‧‧‧Y方向移動機構13‧‧‧Y direction moving mechanism

15‧‧‧接合頭15‧‧‧ Bonding head

16‧‧‧Z方向移動機構16‧‧‧Z direction moving mechanism

17‧‧‧θ方向移動機構17‧‧‧θ direction moving mechanism

20‧‧‧曲柄20‧‧‧ crank

21,23‧‧‧端面21,23‧‧‧ end face

22‧‧‧環22‧‧‧ Ring

24‧‧‧接合工具24‧‧‧ Bonding tools

25‧‧‧基部25‧‧‧ base

26‧‧‧傾斜曲面26‧‧‧Slanted surface

27‧‧‧吸附面27‧‧‧Adsorption surface

28‧‧‧段部28‧‧‧ Section

29‧‧‧下面29‧‧‧Under

30‧‧‧半導體晶粒30‧‧‧Semiconductor grains

32‧‧‧攝影機32‧‧‧ camera

33‧‧‧視野33‧‧ Sight

34‧‧‧閃光燈34‧‧‧flash

35‧‧‧反射鏡35‧‧‧Mirror

36‧‧‧拾取載台36‧‧‧ Picking up the stage

37‧‧‧接合載台37‧‧‧Joining stage

38‧‧‧軌跡38‧‧‧Track

40‧‧‧影像處理部40‧‧‧Image Processing Department

41,51‧‧‧CPU41,51‧‧‧CPU

42,52‧‧‧記憶體42,52‧‧‧ memory

43‧‧‧影像取得程式43‧‧·Image acquisition program

44‧‧‧相對位置檢測程式44‧‧‧ Relative position detection program

45,55‧‧‧控制資料45,55‧‧‧Control data

46,56‧‧‧資料匯流排介面46, 56‧‧‧ data bus interface

47‧‧‧攝影機介面47‧‧‧ camera interface

48‧‧‧閃光燈介面48‧‧‧Flash interface

49,59‧‧‧資料匯流排49, 59‧‧‧ data bus

50‧‧‧控制部50‧‧‧Control Department

53‧‧‧位置控制程式53‧‧‧Location Control Program

54‧‧‧修正程式54‧‧‧correction program

57‧‧‧移動機構介面57‧‧‧Mobile agency interface

60‧‧‧通訊線60‧‧‧Communication line

71~76‧‧‧箭頭71~76‧‧‧Arrows

81~89‧‧‧影像81~89‧‧‧Image

90‧‧‧長邊方向中心線90‧‧‧Long-side direction centerline

91‧‧‧圓形外形基準線91‧‧‧Circular outline line

92‧‧‧四角外形基準線92‧‧‧ four-corner shape baseline

93‧‧‧Y方向基準線93‧‧‧Y direction guideline

94‧‧‧X方向基準線94‧‧‧X direction baseline

95‧‧‧Y方向測量線95‧‧‧Y direction measuring line

96‧‧‧X方向測量線96‧‧‧X direction measuring line

97,98‧‧‧中心97,98‧‧ Center

D‧‧‧焦點深度D‧‧‧Focus depth

L1~L3‧‧‧光路長L1~L3‧‧‧Light path length

△X,△Y,△θ‧‧‧偏移量△X, △Y, △θ‧‧‧ offset

圖1係顯示本發明實施形態中晶粒接合器之控制系統之構成之系統圖。Fig. 1 is a system diagram showing the configuration of a control system of a die bonder in an embodiment of the present invention.

圖2係顯示本發明實施形態中晶粒接合器之接合工具與曲柄之詳細之說明圖。Fig. 2 is a view showing the details of the bonding tool and the crank of the die bonder in the embodiment of the present invention.

圖3係顯示本發明實施形態中晶粒接合器之動作之說明圖。Fig. 3 is an explanatory view showing the operation of the die bonder in the embodiment of the present invention.

圖4(a)、(b)係顯示本發明實施形態中晶粒接合器之接合工具與曲柄之構造與攝影機所捕捉之影像之說明圖。4(a) and 4(b) are explanatory views showing the structure of the bonding tool and the crank of the die bonder and the image captured by the camera in the embodiment of the present invention.

圖5(a)、(b)係顯示對圖4所示之影像進行雙值化處理之步驟之說明圖。5(a) and 5(b) are explanatory views showing the steps of performing binarization processing on the image shown in Fig. 4.

圖6係顯示對圖4所示之影像進行雙值化處理後之影像之說明圖。Fig. 6 is an explanatory view showing an image obtained by binarizing the image shown in Fig. 4.

圖7(a)、(b)係顯示本發明另一實施形態中晶粒接合器之接合工具與環之構造與攝影機所捕捉之影像之說明圖。Fig. 7 (a) and (b) are explanatory views showing the structure of the bonding tool and the ring of the die bonder and the image captured by the camera in another embodiment of the present invention.

圖8(a)、(b)係顯示本發明另一實施形態中晶粒接合器之接合工具之構造與攝影機所捕捉之影像之說明圖。8(a) and 8(b) are explanatory views showing the structure of a bonding tool of a die bonder and an image captured by a camera according to another embodiment of the present invention.

以下,參照圖式說明本發明之實施形態。如圖1所示,本發明之晶粒接合器10具備透過曲柄20安裝有接合工具24之接合頭15、將接合頭15往Y方向導引之導軌11、使接合頭15往Y方向移動之Y方向移動機構13、使導軌11與接合頭15往X方向移動之X方向移動機構12、設在接合頭15之下側之攝影機32、光源即閃光燈34、連接攝影機32與閃光燈34之影像處理部40、及連接X、Y方向移動機構12,13之控制部50。接合工具24在前端具有吸附半導體晶粒30之吸附面27,閃光燈34具備使發光之光朝向接合工具24之方向之反射鏡35。接合頭15在內部具備使接合工具24往Z方向移動之Z方向移動機構16、及使接合工具24往θ方向旋轉移動之θ方向移動機構17,各移動機構16,17分別連接於控制部50。控制部50,藉由使此X、Y、Z、θ方向之各移動機構12,13,16,17動作,使接合工具24往X、Y、Z、θ之各方向移動。此外,如圖1中之座標軸所示,與紙面水平方向為Y方向,紙面之上下方向為Z方向,與紙面垂直方向為X方向,繞Z軸之旋轉方向為θ方向。Hereinafter, embodiments of the present invention will be described with reference to the drawings. As shown in FIG. 1, the die bonder 10 of the present invention includes a bonding head 15 to which a bonding tool 24 is attached via a crank 20, a guide rail 11 for guiding the bonding head 15 in the Y direction, and a bonding head 15 to move in the Y direction. The Y-direction moving mechanism 13, the X-direction moving mechanism 12 for moving the guide rail 11 and the bonding head 15 in the X direction, the camera 32 provided on the lower side of the bonding head 15, the light source 34, the flash unit 34, and the image processing of the connection camera 32 and the flash unit 34 The unit 40 and the control unit 50 that connects the X and Y direction moving mechanisms 12 and 13. The bonding tool 24 has an adsorption surface 27 for adsorbing the semiconductor crystal grains 30 at the tip end, and the flash lamp 34 is provided with a mirror 35 for directing the light of the light toward the bonding tool 24. The bonding head 15 includes a Z-direction moving mechanism 16 that moves the bonding tool 24 in the Z direction, and a θ-direction moving mechanism 17 that rotationally moves the bonding tool 24 in the θ direction. Each of the moving mechanisms 16 and 17 is connected to the control unit 50. . The control unit 50 moves the bonding tools 24 in the respective directions of X, Y, Z, and θ by operating the respective moving mechanisms 12, 13, 16, and 17 in the X, Y, Z, and θ directions. Further, as shown by the coordinate axis in Fig. 1, the horizontal direction of the paper surface is the Y direction, the upper and lower directions of the paper surface are the Z direction, the direction perpendicular to the paper surface is the X direction, and the rotation direction around the Z axis is the θ direction.

如圖1所示,影像處理部40為在內部具備進行訊號、資料之處理之CPU41與儲存資料或程式之記憶體42之電腦。記憶體42在內部儲存有之後說明之影像取得程式43、相對位置檢測程式44、控制資料45。又,影像處理部40具備進行與攝影機32、閃光燈34之連接之攝影機介面47、閃光燈介面48。又,影像處理部40具備用以在與其他電腦之控制部50之間進行資料通訊之資料匯流排介面46。CPU41、記憶體42、各介面47,48與資料匯流排介面46係藉由影像處理部40內部之資料匯流排49連接。As shown in FIG. 1, the image processing unit 40 is a computer having a CPU 41 for processing signals and data therein and a memory 42 for storing data or programs. The memory 42 stores therein an image acquisition program 43, a relative position detection program 44, and a control data 45 which will be described later. Further, the image processing unit 40 includes a camera interface 47 and a flash interface 48 that are connected to the camera 32 and the flash unit 34. Further, the image processing unit 40 is provided with a data bus interface 46 for performing data communication with the control unit 50 of another computer. The CPU 41, the memory 42, the interfaces 47, 48, and the data bus interface 46 are connected by a data bus 49 inside the image processing unit 40.

如圖1所示,控制部50,與影像處理部40相同,為在內部 具備進行訊號、資料之處理之CPU51與儲存資料或程式之記憶體52之電腦,透過資料匯流排介面56、通訊線60、影像處理部40之資料匯流排介面46與影像處理部40之CPU41、記憶體42連接。記憶體52在內部儲存有之後說明之位置控制程式53、修正程式54、控制資料55。又,控制部50具備進行與X、Y、Z、θ方向之各移動機構12,13,16,17之連接之移動機構介面57。CPU51、記憶體52、移動機構介面57與資料匯流排介面56係藉由控制部50內部之資料匯流排59連接。As shown in FIG. 1, the control unit 50 is the same as the image processing unit 40, and is internally A computer 51 having a memory 51 for processing signals and data, and a computer 52 for storing data or programs, through the data bus interface 56, the communication line 60, the data bus interface 46 of the image processing unit 40, and the CPU 41 of the image processing unit 40, The memory 42 is connected. The memory 52 stores therein a position control program 53, a correction program 54, and a control data 55 which will be described later. Further, the control unit 50 includes a moving mechanism interface 57 that connects the moving mechanisms 12, 13, 16, and 17 in the X, Y, Z, and θ directions. The CPU 51, the memory 52, the moving mechanism interface 57, and the data bus interface interface 56 are connected by a data bus 59 inside the control unit 50.

本實施形態之晶粒接合器10之X、Y、Z、θ之各移動機構12,13,16,17分別輸出表示接合工具24前端之X、Y、Z、θ之各方向之位置之訊號,控制部50從各移動機構12,13,16,17之訊號取得接合工具24前端之X、Y、Z、θ之各方向之位置。Each of the moving mechanisms 12, 13, 16, 17 of the X, Y, Z, and θ of the die bonder 10 of the present embodiment outputs a signal indicating the position of each of the X, Y, Z, and θ directions of the tip end of the bonding tool 24, respectively. The control unit 50 obtains the positions of the X, Y, Z, and θ directions of the tip end of the bonding tool 24 from the signals of the respective moving mechanisms 12, 13, 16, and 17.

如圖2所示,接合工具24具有吸附半導體晶粒30之前端吸附面27、較前端吸附面27粗之基部25、及連接吸附面27與基部25且相對於長邊方向中心線90傾斜之傾斜面即傾斜曲面26。前端吸附面27為以與半導體晶粒30之大小大致相同之大小相對於接合工具24之長邊方向中心線90垂直之平面。因此,吸附在吸附面27之半導體晶粒30之背面亦成為相對於接合工具24之長邊方向中心線90垂直之平面。As shown in FIG. 2, the bonding tool 24 has a base portion 25 that adsorbs the front end adsorption surface 27 of the semiconductor die 30, is thicker than the front end adsorption surface 27, and connects the adsorption surface 27 and the base portion 25 and is inclined with respect to the longitudinal direction center line 90. The inclined surface is an inclined curved surface 26. The front end adsorption surface 27 is a plane perpendicular to the center line 90 of the longitudinal direction of the bonding tool 24 in a size substantially the same as the size of the semiconductor die 30. Therefore, the back surface of the semiconductor crystal grain 30 adsorbed on the adsorption surface 27 also becomes a plane perpendicular to the center line 90 of the longitudinal direction of the bonding tool 24.

接合工具24之基部25較前端吸附面27粗,為固定在曲柄20之圓柱形,傾斜曲面26為從吸附面27朝向基部25呈漏斗狀擴展之曲面。又,曲柄20為在內周側嵌合接合工具24之基部25之外周面之圓筒形,其下側或吸附面27之側之端面21為與接合工具24之長邊方向或接合工具24之長邊方向中心線90垂直之平面,其表面加工成鏡面。曲柄20與接合工具 24嵌合,因此不會在與接合工具24之間相對移動,配置在與基部25相鄰之位置。The base portion 25 of the bonding tool 24 is thicker than the front end suction surface 27, and is fixed to the cylindrical shape of the crank 20. The inclined curved surface 26 is a curved surface that expands in a funnel shape from the adsorption surface 27 toward the base portion 25. Further, the crank 20 has a cylindrical shape in which the outer peripheral surface of the base portion 25 of the bonding tool 24 is fitted to the inner peripheral side, and the lower end side or the end surface 21 on the side of the suction surface 27 is the longitudinal direction of the bonding tool 24 or the bonding tool 24 The longitudinal direction of the center line 90 is perpendicular to the plane, and the surface is processed into a mirror surface. Crank 20 and bonding tool The fitting 24 is so as not to move relative to the bonding tool 24, and is disposed adjacent to the base 25.

如圖2所示,攝影機32係配置在接合工具24移動至正上方之既定位置時焦點與吸附在接合工具24之半導體晶粒30之背面(Z方向下側之面)一致之位置,調整成可取得半導體晶粒30之背面之清晰之影像。亦即,攝影機32係調整成攝影機32之透鏡與半導體晶粒30之背面之光路長L1成為攝影機32之透鏡之焦距。As shown in FIG. 2, the camera 32 is disposed at a position where the focus is adhered to the back surface of the semiconductor die 30 of the bonding tool 24 (the lower side in the Z direction) when the bonding tool 24 is moved to a predetermined position directly above, and is adjusted to be adjusted. A clear image of the back side of the semiconductor die 30 can be obtained. That is, the camera 32 is adjusted so that the optical path length L1 of the lens of the camera 32 and the back surface of the semiconductor die 30 becomes the focal length of the lens of the camera 32.

另一方面,如圖2所示,接合工具24之傾斜曲面26、曲柄20之端面21從吸附半導體晶粒30之吸附面27往長邊方向分離配置,從攝影機32之透鏡至接合工具24之傾斜曲面26、曲柄20之端面21之光路長為光路長L2,L3。另一方面,攝影機32之透鏡之焦點深度D為較半導體晶粒30之厚度稍長之程度,因此各光路長L2,L3分別較光路長L1加上焦點深度D之長度長。因此,藉由攝影機32同時取得半導體晶粒30之背面之影像與接合工具24之傾斜曲面26之影像與曲柄20之端面21之影像之情形,接合工具24之傾斜曲面26與曲柄20之端面21成為焦點不一致之狀態,取得之傾斜曲面26之影像與端面21之影像成為多多少少模糊之影像。On the other hand, as shown in FIG. 2, the inclined curved surface 26 of the bonding tool 24 and the end surface 21 of the crank 20 are separated from the adsorption surface 27 of the adsorption semiconductor die 30 in the longitudinal direction, from the lens of the camera 32 to the bonding tool 24. The optical path length of the inclined curved surface 26 and the end surface 21 of the crank 20 is the optical path length L2, L3. On the other hand, since the focal depth D of the lens of the camera 32 is slightly longer than the thickness of the semiconductor crystal 30, the optical path lengths L2 and L3 are longer than the length of the optical path length L1 plus the depth of focus D, respectively. Therefore, by the camera 32 simultaneously capturing the image of the back side of the semiconductor die 30 and the image of the inclined curved surface 26 of the bonding tool 24 and the image of the end face 21 of the crank 20, the inclined curved surface 26 of the bonding tool 24 and the end face 21 of the crank 20 are obtained. In a state in which the focus is inconsistent, the image of the oblique curved surface 26 and the image of the end surface 21 are more or less blurred.

接著,說明本實施形態之晶粒接合器10之動作。如圖3所示,晶粒接合器10之控制部50執行位置控制程式53以驅動X、Y、Z、θ方向之各移動機構12,13,16,17,使接合工具24往放置在拾取載台36上之已切割之晶圓上移動,將半導體晶粒30吸附在接合工具24之前端吸附面27。接著,如圖3所示之軌跡38,使接合頭15往接合載台37上移動,使接合頭15下降至吸附固定於接合載台37上之電路基板之上,將半導體晶粒 30接合在電路基板上。此為晶粒接合器10之基本動作。Next, the operation of the die bonder 10 of the present embodiment will be described. As shown in FIG. 3, the control unit 50 of the die bonder 10 executes the position control program 53 to drive the respective moving mechanisms 12, 13, 16, 17 in the X, Y, Z, and θ directions to place the bonding tool 24 on the pickup. The wafer on the wafer 36 is moved over the wafer 36 to adsorb the semiconductor die 30 to the front end adsorption surface 27 of the bonding tool 24. Next, as shown in the trajectory 38 of FIG. 3, the bonding head 15 is moved onto the bonding stage 37, and the bonding head 15 is lowered onto the circuit substrate adsorbed and fixed on the bonding stage 37 to form the semiconductor die. 30 is bonded to the circuit substrate. This is the basic action of the die bonder 10.

控制部50之CPU51執行位置控制程式53,使接合工具24從拾取載台36往接合載台37移動之期間,從X、Y、Z、θ之各移動機構12,13,16,17之訊號檢測接合工具24前端之X、Y、Z、θ之各方向之位置,如圖2所示,接合工具24來到攝影機32之正上方之既定位置,成為接合工具24之長邊方向中心線90與攝影機32之透鏡之中心位置一致之狀態後,輸出使閃光燈34發光之觸發訊號。此觸發訊號係藉由資料匯流排介面56,46、通訊線60傳達至影像處理部40。此外,既定位置係預先設定在位置控制程式53中之位置。The CPU 51 of the control unit 50 executes the position control program 53 to signal the moving mechanisms 12, 13, 16, 17 from X, Y, Z, and θ while the bonding tool 24 is moving from the pickup stage 36 to the bonding stage 37. The position of each of the X, Y, Z, and θ directions at the front end of the bonding tool 24 is detected. As shown in FIG. 2, the bonding tool 24 comes to a predetermined position directly above the camera 32, and becomes the center line 90 of the long side direction of the bonding tool 24. After the state coincides with the center position of the lens of the camera 32, a trigger signal for causing the flash lamp 34 to emit light is output. The trigger signal is transmitted to the image processing unit 40 via the data bus interface interfaces 56, 46 and the communication line 60. Further, the predetermined position is set in advance in the position control program 53.

此觸發訊號輸入至影像處理部40之CPU41後,執行影像取得程式43。CPU41輸出使閃光燈34發光之指令。藉由此指令,發光訊號從閃光燈介面48輸出至閃光燈34,閃光燈34發光。又,影像處理部40,在觸發訊號輸入後,與閃光燈34之發光同步地通過攝影機介面47進行從攝影機21之影像擷取。接著,擷取之影像儲存在影像處理部40之記憶體42。此外,影像之擷取係一邊使接合工具24移動(不停止移動)一邊進行。After the trigger signal is input to the CPU 41 of the image processing unit 40, the image acquisition program 43 is executed. The CPU 41 outputs an instruction to cause the flash 34 to emit light. With this instruction, the illuminating signal is output from the flash interface 48 to the flash 34, and the flash 34 emits light. Further, after the trigger signal is input, the image processing unit 40 extracts the image from the camera 21 through the camera interface 47 in synchronization with the light emission of the flash lamp 34. Then, the captured image is stored in the memory 42 of the image processing unit 40. Further, the image capturing is performed while moving the bonding tool 24 (without stopping the movement).

閃光燈34發光後,來自閃光燈34之光,如圖4(a)所示之箭頭71,73,75般,從接合工具24之吸附面27之側射入接合工具24之傾斜曲面26、半導體晶粒30之背面、曲柄20之端面21。射入曲柄20之端面21之光之一部分,如圖4所示之箭頭72般,反射向接合工具24之長邊方向或沿著接合工具24之長邊方向中心線90之方向(Z方向負側),如圖2所示,射入接合工具24之下側(吸附面27側)之攝影機32。是以,本實施形態中,曲柄20為反射體,曲柄20之端面21為反射面。又,射入半導體晶粒30 之背面或下側之面(Z方向負側之面)之光之一部分,如圖4(a)所示之箭頭75般,反射向接合工具24之長邊方向或沿著接合工具24之長邊方向中心線90之方向(Z方向負側),射入接合工具24之下側(吸附面27側)之攝影機32。After the flash lamp 34 emits light, the light from the flash lamp 34, like the arrows 71, 73, 75 shown in Fig. 4(a), enters the inclined curved surface 26 of the bonding tool 24 from the side of the adsorption surface 27 of the bonding tool 24, and the semiconductor crystal. The back surface of the pellet 30 and the end surface 21 of the crank 20. A portion of the light incident on the end face 21 of the crank 20 is reflected toward the longitudinal direction of the bonding tool 24 or in the direction along the center line 90 of the longitudinal direction of the bonding tool 24 (arrow in the Z direction) as shown by the arrow 72 shown in FIG. On the side, as shown in Fig. 2, the camera 32 is injected into the lower side of the bonding tool 24 (on the side of the adsorption surface 27). Therefore, in the present embodiment, the crank 20 is a reflector, and the end surface 21 of the crank 20 is a reflecting surface. In addition, the semiconductor die 30 is injected. One of the light on the back side or the lower side (the side on the negative side in the Z direction) is reflected toward the longitudinal direction of the bonding tool 24 or along the length of the bonding tool 24 as indicated by an arrow 75 as shown in Fig. 4(a). The direction of the center line 90 in the lateral direction (the negative side in the Z direction) is incident on the camera 32 on the lower side of the bonding tool 24 (on the side of the adsorption surface 27).

另一方面,如圖4之箭頭73所示,射入接合工具24之傾斜曲面26之光,如圖4(a)所示之箭頭74般,反射向水平方向等與接合工具24之長邊方向不同之方向或與沿著接合工具24之長邊方向中心線90之方向不同之方向。On the other hand, as shown by an arrow 73 in Fig. 4, the light incident on the inclined curved surface 26 of the bonding tool 24 is reflected in the horizontal direction or the like and the long side of the bonding tool 24 as shown by an arrow 74 shown in Fig. 4(a). The direction is different or the direction is different from the direction along the center line 90 of the longitudinal direction of the bonding tool 24.

接著,如圖4(b)所示,在攝影機32之視野捕捉到來自閃光燈34之光反射向攝影機32之端面21之亮度高(白)之環狀影像81(反射體之影像)、來自閃光燈34之光不反射向攝影機32之接合工具24之傾斜曲面26之亮度低(黑或灰)之圓形影像82、位於圓形影像82中之來自閃光燈34之光反射向攝影機32之半導體晶粒30之背面之亮度高(白)之四角影像84。影像處理部40,藉由攝影機32同時取得此三個影像81,82,84,儲存在記憶體42。此外,圖4(b)中以虛線所示之接合工具24前端之影像83被半導體晶粒30之影像遮蔽,攝影機32無法捕捉到。Next, as shown in FIG. 4(b), an annular image 81 (image of the reflector) having a high luminance (white) reflected from the light of the flash lamp 34 toward the end surface 21 of the camera 32 is captured in the field of view of the camera 32, from the flash. The light of 34 does not reflect a circular image 82 having a low brightness (black or gray) to the inclined curved surface 26 of the bonding tool 24 of the camera 32, and the semiconductor crystal grains reflected from the flash lamp 34 in the circular image 82 are reflected to the camera 32. The four corner image 84 of the high brightness (white) on the back side of 30. The video processing unit 40 simultaneously acquires the three images 81, 82, and 84 by the camera 32 and stores them in the memory 42. Further, the image 83 at the leading end of the bonding tool 24 shown by a broken line in Fig. 4(b) is blocked by the image of the semiconductor die 30, and the camera 32 cannot capture it.

如上述說明,攝影機32之焦點調整成與半導體晶粒30之背面一致,因此半導體晶粒30之背面之影像84為清晰之影像。然而,曲柄20之端面21、接合工具24之傾斜曲面26從半導體晶粒30之背面往Z方向偏移大於攝影機32之焦點深度D,因此端面21之亮度高(白)之環狀影像81與傾斜曲面26之亮度低(黑或灰)之圓形影像82為模糊之影像。As explained above, the focus of the camera 32 is adjusted to coincide with the back side of the semiconductor die 30, so that the image 84 on the back side of the semiconductor die 30 is a clear image. However, the end surface 21 of the crank 20 and the inclined curved surface 26 of the bonding tool 24 are offset from the back surface of the semiconductor die 30 in the Z direction by more than the focal depth D of the camera 32, so that the annular image 81 of the end face 21 having a high brightness (white) is The circular image 82 of the oblique curved surface 26 having a low brightness (black or gray) is a blurred image.

影像處理部40之CPU41執行相對位置檢測程式44。以下之說明中,影像之亮度說明為256灰階(亮度0~亮度255)。攝影機32所取得之 影像,如圖5(a)所示,包含端面21之亮度255之環狀影像81(反射體之影像)、接合工具24之傾斜曲面26之亮度0之圓形影像82(傾斜面之影像)、半導體晶粒30之背面之亮度255之四角影像84。如上述說明,環狀影像81與圓形影像82,由於攝影機32之焦點偏移,因此為模糊之影像。因此,如圖5(a)所示,影像81之亮度在外周部如線a所示為亮度255,但隨著接近圓形影像82,因焦點模糊而黑影像82之一部分混入,如線b所示亮度一點一點地降低。接著,進入影像82之區域中後,亮度快速地降低,在影像82之內部區域,亮度成為0附近。接著,如線c所示,亮度0之狀態持續至半導體晶粒30之背面之影像84。攝影機32之焦點與半導體晶粒30之背面一致,因此影像84具有清晰之輪廓。又,半導體晶粒30之背面反射閃光燈34之光,因此亮度為亮度255。是以,影像之亮度,如線d所示,在影像84之邊緣從亮度0至亮度255大致垂直地上升。接著,在影像84之區域,如線e所示,固定為亮度255。The CPU 41 of the image processing unit 40 executes the relative position detecting program 44. In the following description, the brightness of the image is described as 256 gray levels (brightness 0 to brightness 255). Obtained by camera 32 As shown in FIG. 5(a), the image includes an annular image 81 of the brightness 255 of the end surface 21 (image of the reflector), and a circular image 82 of the brightness 0 of the inclined curved surface 26 of the bonding tool 24 (image of the inclined surface). A four-corner image 84 of the brightness 255 of the back side of the semiconductor die 30. As described above, the annular image 81 and the circular image 82 are blurred images because the focus of the camera 32 is shifted. Therefore, as shown in FIG. 5(a), the brightness of the image 81 is the brightness 255 as shown by the line a in the outer peripheral portion. However, as the circular image 82 is approached, a part of the black image 82 is mixed due to the blur of the focus, such as the line b. The brightness shown is reduced little by little. Then, after entering the area of the image 82, the brightness is rapidly lowered, and in the inner area of the image 82, the brightness becomes near zero. Next, as indicated by line c, the state of luminance 0 continues to the image 84 on the back side of the semiconductor die 30. The focus of camera 32 coincides with the back side of semiconductor die 30, so image 84 has a sharp outline. Further, the back surface of the semiconductor die 30 reflects the light of the flash lamp 34, and thus the luminance is 255. Therefore, the brightness of the image, as indicated by line d, rises substantially vertically from brightness 0 to brightness 255 at the edge of image 84. Next, in the area of the image 84, as shown by the line e, it is fixed to the brightness 255.

如圖5(a)所示,影像處理部40之CPU41,使用預先設定之雙值化閾值,如圖5(b)所示,取得影像82之圓形外形基準線91與影像84之四角外形基準線92。雙值化閾值係預先以測試等決定成在閃光燈34之光之狀態、攝影位置等條件為基準條件之情形,與接合工具24之基部25之外形大致相同之直徑之圓形之線可取得為影像82之圓形外形基準線91。影像81與影像82為同心配置之接合工具24之傾斜曲面26與曲柄20之端面21之影像,因此圖5中從線a至線e所示之各區域之亮度之變化,係以繞接合工具24之長邊方向中心線為對象。是以,即使在閃光燈34之光之狀態、攝影位置等條件偏移基準條件之情形,影像81與影像82之間之亮度之變化曲 線,如圖5(a)之一點鏈線b’,成為左右對象(以繞接合工具24之長邊方向中心線為對象),因此如圖5(b)所示之使用雙值化閾值取得之圓形外形基準線91’與小於接合工具24之基部25之外形之直徑之接合工具24之外形成為同心圓。因此,即使在閃光燈34之光之狀態、攝影位置等條件與基準條件偏移之情形,圓形外形基準線91,91’之中心皆與接合工具24之長邊方向中心線之位置一致。As shown in FIG. 5(a), the CPU 41 of the image processing unit 40 uses the preset binarization threshold to obtain the four-corner shape of the circular outline line 91 and the image 84 of the image 82 as shown in FIG. 5(b). Baseline 92. The binarization threshold is determined in advance by a test or the like as a reference condition such as a state of light of the flash lamp 34 and a photographing position, and a circular line having a diameter substantially the same as that of the base portion 25 of the bonding tool 24 can be obtained as The circular shape reference line 91 of the image 82. The image 81 and the image 82 are images of the inclined curved surface 26 of the bonding tool 24 and the end surface 21 of the crank 20 which are arranged concentrically. Therefore, the change of the brightness of each region from the line a to the line e in FIG. 5 is a winding bonding tool. The center line of the long side direction of 24 is the object. Therefore, the brightness variation between the image 81 and the image 82 is changed even in the case where the condition of the light of the flash lamp 34, the photographing position, and the like is shifted by the reference condition. The line, as shown in Fig. 5(a), is a left-right object (targeting the center line in the longitudinal direction of the bonding tool 24), so that the binarization threshold is used as shown in Fig. 5(b). The circular outer shape reference line 91' is formed concentrically with the outer side of the bonding tool 24 having a diameter smaller than the outer shape of the base portion 25 of the bonding tool 24. Therefore, even when the condition of the light of the flash lamp 34, the photographing position, and the like are shifted from the reference condition, the centers of the circular outer shape reference lines 91, 91' coincide with the positions of the center line of the longitudinal direction of the bonding tool 24.

此外,在半導體晶粒30之背面焦點一致,在影像84之邊緣亮度大致垂直地變化,因此即使在閃光燈34之光之狀態、攝影位置等條件與基準條件偏移之情形,影像84之四角外形基準線92之大小幾乎不會改變。In addition, the focus on the back side of the semiconductor die 30 is uniform, and the brightness of the edge of the image 84 changes substantially vertically. Therefore, even if the condition of the light of the flash lamp 34, the photographing position, and the like are shifted from the reference condition, the four-corner shape of the image 84 The size of the reference line 92 hardly changes.

亦即,本實施形態中,反射閃光燈34之光之端面21之環狀影像81亮度高,相反地未反射閃光燈34之光之傾斜曲面26之圓形影像82亮度低,其亮度差非常大。因此,端面21、傾斜曲面26之接合工具24之長邊方向之位置從半導體晶粒30之背面離開焦點深度D以上,即使無法取得清晰之影像,可利用各影像81,82之亮度差大確實地取出接合工具24之外形與同心圓之圓形外形基準線91。又,可利用半導體晶粒30之背面之影像84之清晰之邊緣確實地取出四角外形基準線92。That is, in the present embodiment, the annular image 81 of the end face 21 of the light reflecting the flash lamp 34 has a high luminance, and conversely, the circular image 82 of the inclined curved surface 26 of the light which does not reflect the flash 34 is low in luminance, and the luminance difference is extremely large. Therefore, the position of the end face 21 and the inclined curved surface 26 of the bonding tool 24 in the longitudinal direction is greater than or equal to the depth of focus D from the back surface of the semiconductor die 30, and even if a clear image cannot be obtained, the luminance difference between the respective images 81 and 82 can be made large. The circular shape reference line 91 of the outer shape and the concentric circle of the joining tool 24 is taken out. Moreover, the quadrilateral outline reference line 92 can be reliably taken out using the sharp edges of the image 84 on the back side of the semiconductor die 30.

如圖6所示,影像處理部40從已處理之影像檢測圓形外形基準線91之中心97之位置與四角外形基準線92之中心98之位置,設定通過圓形外形基準線91之中心97且朝向攝影機32之視野33之X方向之X方向基準線94與通過圓形外形基準線91之中心97且朝向攝影機32之視野33之Y方向之Y方向基準線93。又,影像處理部40設定通過四角外形基準線92之中心98且與接近四角外形基準線92之X方向基準線94之邊並 行之X方向測量線96與通過四角外形基準線92之中心98且與接近四角外形基準線92之Y方向基準線93之邊並行之Y方向測量線95。接著,影像處理部40求出圓形外形基準線91之中心97之位置與四角外形基準線92之中心98之位置之X方向、Y方向分別之偏移量△X、△Y。又,影像處理部40從X方向基準線94與X方向測量線96之θ方向之角度差或Y方向基準線93與Y方向測量線95之θ方向之角度差檢測四角外形基準線92之θ方向之旋轉角度偏移△θ。As shown in FIG. 6, the image processing unit 40 detects the position of the center 97 of the circular outline line 91 and the center 98 of the quadrangular outline line 92 from the processed image, and sets the center of the circular outline line 91. The X-direction reference line 94 in the X direction toward the field of view 33 of the camera 32 and the Y-direction reference line 93 passing through the center 97 of the circular outline line 91 and facing the Y direction of the field of view 33 of the camera 32. Further, the image processing unit 40 sets the center 98 passing through the quadrangular outline line 92 and the side of the X-direction reference line 94 close to the quadrangular outline line 92. The X-direction measuring line 96 is in the Y-direction measuring line 95 which passes through the center 98 of the quadrangular outline line 92 and the side of the Y-direction reference line 93 which is close to the quadrangular outline line 92. Next, the image processing unit 40 obtains shift amounts ΔX and ΔY in the X direction and the Y direction, respectively, between the position of the center 97 of the circular outer shape reference line 91 and the position of the center 98 of the quadrangular outer shape reference line 92. Further, the image processing unit 40 detects the angle difference between the X-direction reference line 94 and the X-direction measurement line 96 in the θ direction or the angle difference between the Y-direction reference line 93 and the Y-direction measurement line 95 in the θ direction, and detects the θ of the quadrangular outline line 92. The rotation angle of the direction is shifted by Δθ.

如上述說明,圓形外形基準線91與和接合工具24相對位置不偏移之曲柄20之端面21之內側之外形線為同心圓,且與接合工具24之外形線亦為同心圓,因此圓形外形基準線91之中心97之位置為圖4(a)所示之接合工具24之長邊方向中心線90之中心位置,四角外形基準線92為半導體晶粒30之外形之邊緣,因此四角外形基準線92之中心98成為半導體晶粒30之中心位置。是以,圓形外形基準線91與四角外形基準線92之X、Y方向之各偏移量△X、△Y成為接合工具24之中心位置與半導體晶粒30之中心位置之X、Y方向之各偏移量。As described above, the circular outer shape reference line 91 is concentric with the inner side of the end surface 21 of the crank 20 which is not offset from the position of the bonding tool 24, and the outer line of the bonding tool 24 is also concentric, thus The position of the center 97 of the shape reference line 91 is the center position of the center line 90 of the longitudinal direction of the bonding tool 24 shown in Fig. 4(a), and the four-corner reference line 92 is the outer edge of the semiconductor die 30, so the four corners The center 98 of the outline line 92 becomes the center position of the semiconductor die 30. Therefore, the offset amounts ΔX and ΔY in the X and Y directions of the circular outer shape reference line 91 and the quadrangular outer shape reference line 92 are the X and Y directions of the center position of the bonding tool 24 and the center position of the semiconductor die 30. Each offset.

同樣地,通過圓形外形基準線91之中心97且朝向攝影機32之視野33之X方向之X方向基準線94與通過圓形外形基準線91之中心97且朝向攝影機32之視野33之Y方向之Y方向基準線93為接合工具24之吸附面27上之基準線,通過四角外形基準線92之中心98且與接近四角外形基準線92之X方向基準線94之邊並行之X方向測量線96與通過四角外形基準線92之中心98且與接近四角外形基準線92之Y方向基準線93之邊並行之Y方向測量線95成為表示半導體晶粒30相對於接合工具24之 吸附面27上之基準線之傾斜角度之線。是以,從X方向基準線94與X方向測量線96之θ方向之角度差或Y方向基準線93與Y方向測量線95之θ方向之角度差求出之四角外形基準線92之θ方向之旋轉角度偏移△θ成為半導體晶粒30相對於接合工具24之吸附面27上之基準線之傾斜角度。此外,接合工具24之中心位置與半導體晶粒30之中心位置之X、Y方向之各偏移量與半導體晶粒30相對於接合工具24之吸附面27上之基準線之傾斜角度為接合工具24與半導體晶粒30之相對位置。Similarly, the X-direction reference line 94 passing through the center 97 of the circular outline line 91 and facing the X direction of the field of view 33 of the camera 32 and the Y direction passing through the center 97 of the circular outline line 91 and toward the field of view 33 of the camera 32. The Y-direction reference line 93 is a reference line on the adsorption surface 27 of the bonding tool 24, and passes through the center 98 of the quadrangular outline line 92 and is parallel to the X-direction measurement line near the X-direction reference line 94 of the quadrangular outline line 92. The Y-direction measuring line 95 parallel to the side passing through the center 98 of the quadrangular outline line 92 and the Y-direction reference line 93 close to the quadrangular outline line 92 is indicative of the semiconductor die 30 with respect to the bonding tool 24. The line of the inclination angle of the reference line on the adsorption surface 27. Therefore, the θ direction of the four-corner shape reference line 92 obtained from the angular difference between the X-direction reference line 94 and the X-direction measurement line 96 in the θ direction or the angular difference between the Y-direction reference line 93 and the Y-direction measurement line 95 in the θ direction is obtained. The rotation angle shift Δθ is an inclination angle of the semiconductor crystal grain 30 with respect to the reference line on the adsorption surface 27 of the bonding tool 24. Further, the offset between the center position of the bonding tool 24 and the center position of the semiconductor die 30 in the X and Y directions and the inclination angle of the semiconductor die 30 with respect to the reference line on the adsorption surface 27 of the bonding tool 24 are bonding tools. The relative position of 24 to semiconductor die 30.

影像處理部40檢測出半導體晶粒30相對於接合工具24之X、Y、θ方向之各偏移量△X、△Y、△θ後,將其資料通過資料匯流排介面46,56、通訊線60傳送至控制部50。控制部50之CPU51執行修正程式54,將在使接合工具24移動至圖3所示之接合載台37之期間各移動機構12,13,16,17檢測之接合工具24前端之位置修正接收之X、Y、θ方向之各偏移量△X、△Y、△θ,能以正確位置、方向將半導體晶粒30接合在接合載台37上之電路基板。The image processing unit 40 detects the offsets ΔX, ΔY, and Δθ of the semiconductor die 30 with respect to the X, Y, and θ directions of the bonding tool 24, and then passes the data through the data bus interface 46, 56, and communication. The line 60 is sent to the control unit 50. The CPU 51 of the control unit 50 executes the correction program 54 to correct the position of the front end of the bonding tool 24 detected by each of the moving mechanisms 12, 13, 16, 17 during the movement of the bonding tool 24 to the bonding stage 37 shown in FIG. Each of the shift amounts ΔX, ΔY, and Δθ in the X, Y, and θ directions can bond the semiconductor die 30 to the circuit board on the bonding stage 37 at the correct position and direction.

如以上說明,本實施形態之晶粒接合器10,利用把持接合工具24之曲柄20之端面21之影像81與接合工具24之傾斜曲面26之影像82之亮度差、半導體晶粒30之背面之影像84與接合工具24之傾斜曲面26之影像82之亮度差檢測接合工具24之長邊方向中心線90之中心位置、半導體晶粒30之中心位置,因此端面21、傾斜曲面26從半導體晶粒30之背面偏移大於焦點深度D,即使各影像81,82不清晰之情形,亦可確實地檢測接合工具24與半導體晶粒30之相對位置。因此,能以將曲柄20之端面21加工成鏡面成為反射面之簡便構成,不使用複雜之光學系即可有效檢測半 導體晶粒之位置偏移。又,曲柄20把持接合工具24,沒有與接合工具24相對移動,因此在取得接合工具24、曲柄20、半導體晶粒30之影像時不需使接合工具24之移動停止,可縮短作業時間。再者,由於曲柄20未從接合頭15突出,因此不會因接合頭15之移動產生振動,能以簡便構成有效檢測半導體晶粒之位置偏移。As described above, the die bonder 10 of the present embodiment utilizes the difference in luminance between the image 81 of the end face 21 of the crank 20 of the bonding tool 24 and the image 82 of the inclined curved surface 26 of the bonding tool 24, and the back surface of the semiconductor die 30. The brightness difference between the image 84 and the image 82 of the inclined curved surface 26 of the bonding tool 24 detects the center position of the center line 90 in the longitudinal direction of the bonding tool 24, the center position of the semiconductor die 30, and thus the end face 21 and the inclined curved surface 26 from the semiconductor die. The back side offset of 30 is larger than the depth of focus D, and the relative position of the bonding tool 24 and the semiconductor die 30 can be surely detected even if the respective images 81, 82 are not clear. Therefore, the end surface 21 of the crank 20 can be processed into a mirror surface to form a reflecting surface, and the complex optical system can be used to effectively detect the half. The position of the conductor grains is shifted. Further, since the crank 20 holds the bonding tool 24 and does not move relative to the bonding tool 24, it is not necessary to stop the movement of the bonding tool 24 when acquiring the image of the bonding tool 24, the crank 20, and the semiconductor die 30, and the working time can be shortened. Further, since the crank 20 does not protrude from the bonding head 15, vibration does not occur due to the movement of the bonding head 15, and the positional deviation of the semiconductor crystal grains can be effectively detected with a simple configuration.

本實施形態中,說明接合工具24之傾斜面為漏斗狀之傾斜曲面26,但傾斜面只要為相對於接合工具24之長邊方向中心線90傾斜、使來自閃光燈34之光不反射向沿著長邊方向中心線90之方向之面,則任何形狀皆可,例如,為將吸附面27與基部25斜向連接之錐面亦可。In the present embodiment, the inclined surface of the bonding tool 24 is a funnel-shaped inclined curved surface 26, but the inclined surface is inclined with respect to the longitudinal center line 90 of the bonding tool 24 so that the light from the flash lamp 34 is not reflected along The surface in the direction of the longitudinal direction center line 90 may be any shape, and may be, for example, a tapered surface that connects the adsorption surface 27 and the base portion 25 obliquely.

又,本實施形態中,說明在接合動作中檢測位置偏移量並進行其修正,但本發明不僅是接合動作中之修正,例如,亦可適用於在實際產品之接合前之訓練或示教,預先測定位置偏移並根據其結果設定接合工具24之偏置量時。在此情形,將在取得影像時使接合工具24之移動停止並在靜止狀態下拍攝之接合工具24之傾斜曲面26、曲柄20、半導體晶粒30之各影像81,82,84與不使接合工具24之移動停止而取得之各影像81,82,84組合以設定偏移量、偏置量亦可。Further, in the present embodiment, the positional shift amount is detected and corrected in the joining operation. However, the present invention is not only a correction in the joining operation, but also, for example, a training or teaching before the joining of the actual product. The positional deviation is measured in advance and the offset amount of the bonding tool 24 is set based on the result. In this case, the inclined curved surface 26 of the bonding tool 24, the crank 20, and the respective images 81, 82, 84 of the semiconductor die 30, which are stopped by the movement of the bonding tool 24 when the image is acquired, are not joined. The images 81, 82, and 84 acquired by the movement of the tool 24 are combined to set the offset amount and the offset amount.

又,本實施形態中,說明根據接合工具24與吸附在接合工具24之吸附面27之半導體晶粒30之相對位置修正接合工具24之位置,但利用接合工具24之長邊方向中心線90之位置檢測結果,修正接合工具24與拾取載台36或接合載台37之間之相對位置,修正晶粒接合器10之溫度變化導致之拾取位置或接合位置之偏移量亦可。此情形,例如,求出接合工具24與拾取載台36或接合載台37之間之位置偏移之移動平均,根據此 移動平均值之變化傾向決定偏移量之修正方向亦可。Further, in the present embodiment, the position of the bonding tool 24 is corrected based on the relative position of the bonding tool 24 and the semiconductor die 30 adsorbed on the adsorption surface 27 of the bonding tool 24, but the center line 90 in the longitudinal direction of the bonding tool 24 is used. As a result of the position detection, the relative position between the bonding tool 24 and the pickup stage 36 or the bonding stage 37 is corrected, and the offset amount of the pickup position or the bonding position due to the temperature change of the die bonder 10 may be corrected. In this case, for example, a moving average of the positional deviation between the bonding tool 24 and the pickup stage 36 or the bonding stage 37 is obtained, according to which The tendency of the change in the moving average determines the direction in which the offset is corrected.

接著,參照圖7、圖8說明本發明之其他實施形態。對與參照圖1至圖6說明之實施形態相同之部分賦予相同符號以省略說明。圖7所示之實施形態係在參照圖1至圖6說明之實施形態之曲柄20下側安裝嵌合固定在接合工具24之基部25之外周之環22。環22之下側之端面23加工成鏡面,可反射來自閃光燈34之光。本實施形態中,環22為反射體,端面23為反射面,環22與基部25相鄰配置。Next, another embodiment of the present invention will be described with reference to Figs. 7 and 8 . The same portions as those of the embodiment described with reference to FIGS. 1 to 6 are denoted by the same reference numerals to omit the description. The embodiment shown in Fig. 7 is a ring 22 which is attached and fixed to the outer periphery of the base portion 25 of the bonding tool 24 on the lower side of the crank 20 of the embodiment described with reference to Figs. 1 to 6 . The end face 23 on the lower side of the ring 22 is machined into a mirror surface that reflects light from the flash lamp 34. In the present embodiment, the ring 22 is a reflector, the end surface 23 is a reflection surface, and the ring 22 is disposed adjacent to the base portion 25.

如圖7(b)所示,本實施形態中,攝影機32取得稍微模糊之亮度高(白)之環狀之環22之端面23之影像86、稍微模糊之接合工具24之傾斜曲面26之亮度低(黑或灰)之影像82、亮度高(白)之半導體晶粒30之背面之影像84,取出端面23之影像86與傾斜曲面26之影像82之圓形外形基準線91、與傾斜曲面26之影像82與半導體晶粒30之背面之影像84之四角外形基準線92,檢測接合工具24與半導體晶粒30之相對位置。本實施形態之效果與上述參照圖1至圖6說明之實施形態相同。As shown in Fig. 7(b), in the present embodiment, the camera 32 obtains the image 86 of the end face 23 of the ring 22 which is slightly blurred and has a high brightness (white), and the brightness of the inclined curved surface 26 of the bonding tool 24 which is slightly blurred. A low (black or gray) image 82, a high brightness (white) image 84 of the back side of the semiconductor die 30, an image 86 of the end face 23 and a circular outline line 91 of the image 82 of the inclined curved surface 26, and a sloped surface The image 82 of the image 82 and the quadrangular outline line 92 of the image 84 on the back side of the semiconductor die 30 detect the relative position of the bonding tool 24 to the semiconductor die 30. The effects of this embodiment are the same as those of the embodiment described above with reference to Figs. 1 to 6 .

圖8(a)所示之另一實施形態係將接合工具24之基部25分段,將其段部28下側之下面29加工成鏡面,可反射來自閃光燈34之光。本實施形態中,接合工具24之段部28為反射體,段部28之下面29為反射面,下面29與基部25相鄰配置。In another embodiment shown in Fig. 8(a), the base portion 25 of the bonding tool 24 is segmented, and the lower surface 29 of the lower portion of the segment portion 28 is processed into a mirror surface to reflect light from the flash lamp 34. In the present embodiment, the segment portion 28 of the bonding tool 24 is a reflector, the lower surface 29 of the segment portion 28 is a reflecting surface, and the lower surface 29 is disposed adjacent to the base portion 25.

如圖8(b)所示,本實施形態中,攝影機32取得稍微模糊之亮度高(白)之環狀之段部28之下面29之影像88、稍微模糊之接合工具24之傾斜曲面26之亮度低(黑或灰)之影像82、亮度高(白)之半導體晶粒30之背面之影像84,取出下面29之影像88與傾斜曲面26之影像82之圓形外 形基準線91、與傾斜曲面26之影像82與半導體晶粒30之背面之影像84之四角外形基準線92,檢測接合工具24與半導體晶粒30之相對位置。本實施形態之效果與上述參照圖1至圖6說明之實施形態相同。As shown in Fig. 8(b), in the present embodiment, the camera 32 obtains an image 88 of the lower surface 29 of the annular portion 28 having a slightly blurred brightness (white), and a slightly curved curved surface 26 of the bonding tool 24. An image 82 having a low brightness (black or gray) and an image 84 on the back side of the semiconductor die 30 having a high brightness (white) are taken out of the image 82 of the lower surface 29 and the image 82 of the inclined curved surface 26 The shape reference line 91, the image 82 of the inclined curved surface 26, and the quadrangular outline line 92 of the image 84 on the back side of the semiconductor die 30 detect the relative position of the bonding tool 24 and the semiconductor die 30. The effects of this embodiment are the same as those of the embodiment described above with reference to Figs. 1 to 6 .

10‧‧‧晶粒接合器10‧‧ ‧ die bonder

11‧‧‧導軌11‧‧‧ Guide rail

12‧‧‧X方向移動機構12‧‧‧X direction moving mechanism

13‧‧‧Y方向移動機構13‧‧‧Y direction moving mechanism

15‧‧‧接合頭15‧‧‧ Bonding head

16‧‧‧Z方向移動機構16‧‧‧Z direction moving mechanism

17‧‧‧θ方向移動機構17‧‧‧θ direction moving mechanism

20‧‧‧曲柄20‧‧‧ crank

24‧‧‧接合工具24‧‧‧ Bonding tools

27‧‧‧吸附面27‧‧‧Adsorption surface

30‧‧‧半導體晶粒30‧‧‧Semiconductor grains

32‧‧‧攝影機32‧‧‧ camera

34‧‧‧閃光燈34‧‧‧flash

35‧‧‧反射鏡35‧‧‧Mirror

40‧‧‧影像處理部40‧‧‧Image Processing Department

41,51‧‧‧CPU41,51‧‧‧CPU

42,52‧‧‧記憶體42,52‧‧‧ memory

43‧‧‧影像取得程式43‧‧·Image acquisition program

44‧‧‧相對位置檢測程式44‧‧‧ Relative position detection program

45,55‧‧‧控制資料45,55‧‧‧Control data

46,56‧‧‧資料匯流排介面46, 56‧‧‧ data bus interface

47‧‧‧攝影機介面47‧‧‧ camera interface

48‧‧‧閃光燈介面48‧‧‧Flash interface

49,59‧‧‧資料匯流排49, 59‧‧‧ data bus

50‧‧‧控制部50‧‧‧Control Department

53‧‧‧位置控制程式53‧‧‧Location Control Program

54‧‧‧修正程式54‧‧‧correction program

57‧‧‧移動機構介面57‧‧‧Mobile agency interface

60‧‧‧通訊線60‧‧‧Communication line

Claims (9)

一種晶粒接合器,包含:接合工具;光源;攝影機;以及反射體;該接合工具具備吸附半導體晶粒之前端之吸附面、較前端之該吸附面粗之基部、及連接該吸附面與該基部且相對於長邊方向中心線傾斜之傾斜面;該光源係配置在該接合工具之該吸附面側;該攝影機同時取得吸附在該吸附面之該半導體晶粒之影像與該反射體之影像與該接合工具之該傾斜面之影像;該反射體與該接合工具之該基部相鄰接,於該接合工具之長邊方向與該吸附面分離該攝影機之焦點深度以上而配置,並不會與該接合工具相對移動,將來自該光源之光至少反射至該接合工具之該吸附面側。A die bonder comprising: a bonding tool; a light source; a camera; and a reflector; the bonding tool having an adsorption surface for adsorbing the front end of the semiconductor die, a base portion thicker than the front end of the adsorption surface, and connecting the adsorption surface and the a base portion and an inclined surface inclined with respect to a center line of the longitudinal direction; the light source is disposed on the adsorption surface side of the bonding tool; and the camera simultaneously obtains an image of the semiconductor die adsorbed on the adsorption surface and an image of the reflector And an image of the inclined surface of the bonding tool; the reflector is adjacent to the base of the bonding tool, and is disposed in a longitudinal direction of the bonding tool and is separated from the adsorption surface by a depth of focus of the camera, and is not disposed The light is moved relative to the bonding tool to reflect at least the light from the light source to the side of the adsorption surface of the bonding tool. 如申請專利範圍第1項之晶粒接合器,其進一步包含影像處理部;該影像處理部處理該攝影機所取得之該反射體之影像、該攝影機所取得之該接合工具之該傾斜面之影像、及該攝影機所取得之該半導體晶粒之影像,以檢測該接合工具與該半導體晶粒之相對位置。The die bonder of claim 1, further comprising an image processing unit; the image processing unit processes the image of the reflector obtained by the camera, and the image of the inclined surface of the bonding tool obtained by the camera And an image of the semiconductor die obtained by the camera to detect a relative position of the bonding tool and the semiconductor die. 如申請專利範圍第1或2項之晶粒接合器,其中,該反射體係把持該接合工具之曲柄、或安裝在該接合工具之環、或與該接合工具之該基部相鄰接之段部,具有相對於該接合工具之長邊方向中心線垂直之反射面; 該反射面為該曲柄之該吸附面側之端面、或該環之該吸附面側之端面、或該段部之端面。The die bonder of claim 1 or 2, wherein the reflective system holds a crank of the bonding tool, or a ring attached to the bonding tool or a portion adjacent to the base of the bonding tool a reflecting surface perpendicular to a center line of a longitudinal direction of the bonding tool; The reflecting surface is an end surface of the crank on the side of the adsorption surface, or an end surface of the ring on the side of the adsorption surface, or an end surface of the segment. 如申請專利範圍第1或2項之晶粒接合器,其中,該接合工具與該半導體晶粒之相對位置,係該接合工具之長邊方向中心線之該吸附面上之位置與該半導體晶粒之中心之該吸附面上之位置之間之偏移量、或該半導體晶粒相對於該吸附面上之基準軸之傾斜角度之任一者或兩者。The die bonder of claim 1 or 2, wherein a position of the bonding tool and the semiconductor die is a position on the adsorption face of a center line of a longitudinal direction of the bonding tool and the semiconductor crystal Either or both of the offset between the positions of the centers of the particles on the adsorption surface or the angle of inclination of the semiconductor grains with respect to the reference axis of the adsorption surface. 如申請專利範圍第1或2項之晶粒接合器,其進一步包含:移動機構;以及控制部;該移動機構使該接合工具移動;該控制部藉由該移動機構使該接合工具移動,該接合工具從該半導體晶粒之拾取位置到達與接合位置間之既定位置時使該光源發光,一邊使該接合工具移動一邊藉由該攝影機同時取得吸附在該吸附面之半導體晶粒之影像與該接合工具之該傾斜面之影像與該反射體之影像。The die bonder of claim 1 or 2, further comprising: a moving mechanism; and a control portion; the moving mechanism moves the bonding tool; the control portion moves the bonding tool by the moving mechanism, When the bonding tool reaches a predetermined position between the semiconductor die and the bonding position, the light source emits light, and while the bonding tool moves, the camera simultaneously acquires an image of the semiconductor die adsorbed on the adsorption surface and the image An image of the inclined surface of the bonding tool and an image of the reflector. 如申請專利範圍第1或2項之晶粒接合器,其進一步包含:移動機構;以及控制部;該移動機構使該接合工具移動;該控制部藉由該移動機構使該接合工具之位置變化,並根據該影像處理部檢測出之該接合工具與該半導體晶粒之相對位置修正該接合工具之位置。The die bonder of claim 1 or 2, further comprising: a moving mechanism; and a control portion; the moving mechanism moves the bonding tool; and the control portion changes a position of the bonding tool by the moving mechanism And correcting the position of the bonding tool based on the relative position of the bonding tool and the semiconductor die detected by the image processing unit. 一種位置檢測方法,係在晶粒接合器中檢測接合工具與半導體晶粒之 相對位置,其特徵在於,包含:影像取得步驟;以及相對位置檢測步驟;該晶粒接合器具備接合工具、配置在該接合工具之吸附面側之光源、不會與該接合工具相對移動且將來自該光源之光反射至該接合工具之該吸附面側之反射體、及同時取得吸附在該吸附面之半導體晶粒之影像與該反射體之影像與該接合工具之該傾斜面之影像之攝影機,該接合工具具有吸附該半導體晶粒之前端之吸附面、較前端之該吸附面粗之基部、及連接該吸附面與該基部且相對於長邊方向中心線傾斜之傾斜面,該反射體與該接合工具之該基部相鄰,於該接合工具之長邊方向與該吸附面分離該攝影機之焦點深度以上而配置,包含相對於該接合工具之長邊方向中心線垂直之反射面;該影像取得步驟,藉由該攝影機同時取得吸附在該吸附面之該半導體晶粒之影像與該反射體之影像與該接合工具之該傾斜面之影像;該相對位置檢測步驟,從該攝影機所取得之該反射體之影像、該攝影機所取得之該接合工具之該傾斜面之影像、及該攝影機所取得之該半導體晶粒之影像,檢測該接合工具與該半導體晶粒之相對位置。A position detecting method for detecting a bonding tool and a semiconductor die in a die bonder a relative position, comprising: an image acquisition step; and a relative position detection step; the die bonder includes a bonding tool, a light source disposed on an adsorption surface side of the bonding tool, and does not move relative to the bonding tool and The light from the light source is reflected to the reflector on the adsorption surface side of the bonding tool, and the image of the semiconductor die adsorbed on the adsorption surface and the image of the reflector and the image of the inclined surface of the bonding tool are simultaneously obtained. In the camera, the bonding tool has a suction surface that adsorbs the front end of the semiconductor die, a base portion that is thicker than the front end of the adsorption surface, and an inclined surface that connects the adsorption surface and the base portion and is inclined with respect to a center line of the longitudinal direction. The body is adjacent to the base of the bonding tool, and is disposed apart from the focal depth of the camera in a longitudinal direction of the bonding tool, and includes a reflecting surface perpendicular to a center line of a longitudinal direction of the bonding tool; The image obtaining step is performed by the camera simultaneously acquiring an image of the semiconductor die adsorbed on the adsorption surface and an image of the reflector An image of the inclined surface of the bonding tool; the relative position detecting step, the image of the reflector obtained from the camera, the image of the inclined surface of the bonding tool obtained by the camera, and the image obtained by the camera An image of the semiconductor die, detecting the relative position of the bonding tool to the semiconductor die. 如申請專利範圍第7項之位置檢測方法,其中,該接合工具與該半導體晶粒之相對位置,係該接合工具之長邊方向中心線之該吸附面上之位置與該半導體晶粒之中心之該吸附面上之位置之間之偏移量、或該半導體晶粒相對於該吸附面上之基準軸之傾斜角度之任一者或兩者。The position detecting method of claim 7, wherein a position of the bonding tool and the semiconductor die is a position on the adsorption surface of the longitudinal direction center line of the bonding tool and a center of the semiconductor die Either or both of the offset between the positions on the adsorption surface or the angle of inclination of the semiconductor die relative to the reference axis of the adsorption surface. 如申請專利範圍第7或8項之位置檢測方法,其中,該晶粒接合器進 一步具備使該接合工具移動之移動機構;該影像取得步驟,藉由該移動機構使該接合工具移動,該接合工具從該半導體晶粒之拾取位置到達與接合位置間之既定位置時使該光源發光,一邊使該接合工具移動一邊藉由該攝影機同時取得吸附在該吸附面之半導體晶粒之影像與該反射體之影像與該接合工具之該傾斜面之影像。A position detecting method according to claim 7 or 8 wherein the die bonder advances a moving mechanism for moving the bonding tool in one step; the image capturing step of moving the bonding tool by the moving mechanism, the bonding tool making the light source from a picking position of the semiconductor die to a predetermined position between the bonding position When the bonding tool is moved, the image of the semiconductor die adsorbed on the adsorption surface and the image of the reflector and the inclined surface of the bonding tool are simultaneously acquired by the camera.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005067046A1 (en) * 2004-01-07 2005-07-21 Nikon Corporation Stacked device and method for stacking integrated circuit devices
JP2007115851A (en) * 2005-10-19 2007-05-10 Toshiba Corp Method and device for inspecting position of semiconductor component, and manufacturing method of semiconductor device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2689403B2 (en) * 1988-03-07 1997-12-10 山形カシオ株式会社 Electronic component mounting method for picking up components
JPH088592A (en) * 1994-06-22 1996-01-12 Matsushita Electric Ind Co Ltd Electronic part mounting device
JPH1117392A (en) * 1997-06-23 1999-01-22 Matsushita Electric Ind Co Ltd Electronic component/mounting device
JP3784739B2 (en) * 2002-03-18 2006-06-14 シャープ株式会社 Die bonding equipment
JP3949511B2 (en) * 2002-05-21 2007-07-25 芝浦メカトロニクス株式会社 Article recognition equipment, pellet bonding equipment
JP4234402B2 (en) 2002-11-21 2009-03-04 富士機械製造株式会社 Electronic circuit component image acquisition device
JP4674220B2 (en) * 2007-03-05 2011-04-20 ヤマハ発動機株式会社 Component transfer device, surface mounter, and electronic component inspection device
JP5059518B2 (en) * 2007-08-10 2012-10-24 Juki株式会社 Electronic component mounting method and apparatus
JP5596929B2 (en) * 2009-02-12 2014-09-24 富士機械製造株式会社 Method for positioning push pin and electronic component supply apparatus using the method
JP5443938B2 (en) * 2009-10-19 2014-03-19 Juki株式会社 Electronic component mounting equipment
JP2013098341A (en) * 2011-10-31 2013-05-20 Panasonic Corp Component mounting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005067046A1 (en) * 2004-01-07 2005-07-21 Nikon Corporation Stacked device and method for stacking integrated circuit devices
JP2007115851A (en) * 2005-10-19 2007-05-10 Toshiba Corp Method and device for inspecting position of semiconductor component, and manufacturing method of semiconductor device

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