TWI489546B - 將氣體徑向傳送至腔室之裝置 - Google Patents

將氣體徑向傳送至腔室之裝置 Download PDF

Info

Publication number
TWI489546B
TWI489546B TW100113701A TW100113701A TWI489546B TW I489546 B TWI489546 B TW I489546B TW 100113701 A TW100113701 A TW 100113701A TW 100113701 A TW100113701 A TW 100113701A TW I489546 B TWI489546 B TW I489546B
Authority
TW
Taiwan
Prior art keywords
gas distribution
disposed
flange
gas
opening
Prior art date
Application number
TW100113701A
Other languages
English (en)
Chinese (zh)
Other versions
TW201222659A (en
Inventor
Jared Ahmad Lee
Martin Jeff Salinas
Ankur Agarwal
Ezra Robert Gold
James P Cruse
Aniruddha Pal
Andrew Ngyyen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201222659A publication Critical patent/TW201222659A/zh
Application granted granted Critical
Publication of TWI489546B publication Critical patent/TWI489546B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/6416—With heating or cooling of the system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
TW100113701A 2010-04-30 2011-04-20 將氣體徑向傳送至腔室之裝置 TWI489546B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33004110P 2010-04-30 2010-04-30
US12/907,947 US8562742B2 (en) 2010-04-30 2010-10-19 Apparatus for radial delivery of gas to a chamber and methods of use thereof

Publications (2)

Publication Number Publication Date
TW201222659A TW201222659A (en) 2012-06-01
TWI489546B true TWI489546B (zh) 2015-06-21

Family

ID=44857318

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100113701A TWI489546B (zh) 2010-04-30 2011-04-20 將氣體徑向傳送至腔室之裝置

Country Status (6)

Country Link
US (1) US8562742B2 (enExample)
JP (1) JP5752238B2 (enExample)
KR (1) KR101456894B1 (enExample)
CN (1) CN102870200B (enExample)
TW (1) TWI489546B (enExample)
WO (1) WO2011137010A2 (enExample)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070281106A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US8562742B2 (en) * 2010-04-30 2013-10-22 Applied Materials, Inc. Apparatus for radial delivery of gas to a chamber and methods of use thereof
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
CN102495515B (zh) * 2011-12-12 2014-01-15 中国科学院长春光学精密机械与物理研究所 一种适用于空间相机热控制的隔热垫
CN102564139B (zh) * 2012-03-16 2015-02-18 中国恩菲工程技术有限公司 用于冶金炉的加料口装置
JP5964626B2 (ja) * 2012-03-22 2016-08-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US9662688B2 (en) 2012-07-09 2017-05-30 Kla-Tencor Corporation Apparatus and method for cross-flow purge for optical components in a chamber
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
WO2014085497A1 (en) * 2012-11-30 2014-06-05 Applied Materials, Inc Process chamber gas flow apparatus, systems, and methods
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
WO2014143846A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc Multi-position batch load lock apparatus and systems and methods including same
JP6165518B2 (ja) * 2013-06-25 2017-07-19 株式会社日立ハイテクノロジーズ プラズマ処理方法および真空処理装置
CN104377155B (zh) * 2013-08-14 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 静电卡盘以及等离子体加工设备
JP2015060934A (ja) * 2013-09-18 2015-03-30 株式会社日立ハイテクノロジーズ プラズマ処理方法
US9530623B2 (en) * 2013-11-26 2016-12-27 Applied Materials, Inc. Process chamber apparatus, systems, and methods for controlling a gas flow pattern
WO2015080900A1 (en) * 2013-11-26 2015-06-04 Applied Materials, Inc. Tilted plate for batch processing and methods of use
US20150155187A1 (en) * 2013-12-04 2015-06-04 Lam Research Corporation Annular baffle for pumping from above a plane of the semiconductor wafer support
CN105097600B (zh) * 2014-04-15 2018-07-06 北京北方华创微电子装备有限公司 一种真空锁定腔室
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US20160314997A1 (en) * 2015-04-22 2016-10-27 Applied Materials, Inc. Loadlock apparatus, cooling plate assembly, and electronic device processing systems and methods
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10403515B2 (en) * 2015-09-24 2019-09-03 Applied Materials, Inc. Loadlock integrated bevel etcher system
CN114975176A (zh) * 2016-04-25 2022-08-30 应用材料公司 用于自组装单层工艺的化学输送腔室
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
CN107437521A (zh) * 2016-05-26 2017-12-05 北京北方华创微电子装备有限公司 一种刻蚀机的晶圆传送方法和装置
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
JP6352993B2 (ja) 2016-08-10 2018-07-04 株式会社東芝 流路構造及び処理装置
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
JP6495875B2 (ja) 2016-09-12 2019-04-03 株式会社東芝 流路構造及び処理装置
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
CN110024500B (zh) * 2017-02-03 2020-11-17 惠普发展公司，有限责任合伙企业 利用蒸汽和隔离腔室的热学控制
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10424487B2 (en) 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
CN108538697B (zh) * 2018-05-16 2020-02-21 安徽晟源环保新型材料有限公司 一种等离子刻蚀机
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11779871B2 (en) * 2018-12-21 2023-10-10 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Exhaust module for wafer baking apparatus and wafer processing system having the same
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11901198B2 (en) * 2019-07-12 2024-02-13 Axcelis Technologies, Inc. Toxic outgas control post process

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6308654B1 (en) * 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
US20020007791A1 (en) * 2000-06-01 2002-01-24 Takahiro Horiguchi Single-substrate-processing apparatus for semiconductor process
US6444037B1 (en) * 1996-11-13 2002-09-03 Applied Materials, Inc. Chamber liner for high temperature processing chamber
TW200509246A (en) * 2003-05-22 2005-03-01 Axcelis Tech Inc Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
TW200715403A (en) * 2005-09-12 2007-04-16 Matsushita Electric Industrial Co Ltd Plasma processing apparatus
TW201009979A (en) * 2008-06-25 2010-03-01 Tokyo Electron Ltd Vacuum processing apparatus

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5885358A (en) * 1996-07-09 1999-03-23 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
US20020078893A1 (en) 2000-05-18 2002-06-27 Applied Materials , Inc. Plasma enhanced chemical processing reactor and method
JP2003124206A (ja) * 2001-10-18 2003-04-25 Tokyo Electron Ltd 熱処理装置
WO2004097919A1 (ja) * 2003-05-02 2004-11-11 Tokyo Electron Limited 処理ガス導入機構およびプラズマ処理装置
KR100988085B1 (ko) 2003-06-24 2010-10-18 삼성전자주식회사 고밀도 플라즈마 처리 장치
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7722737B2 (en) 2004-11-29 2010-05-25 Applied Materials, Inc. Gas distribution system for improved transient phase deposition
US7648927B2 (en) * 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
TWI329135B (en) * 2005-11-04 2010-08-21 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
US7759249B2 (en) 2006-03-28 2010-07-20 Tokyo Electron Limited Method of removing residue from a substrate
CN100527361C (zh) * 2006-12-06 2009-08-12 北京北方微电子基地设备工艺研究中心有限责任公司 气体分布装置
JP5249547B2 (ja) * 2007-09-28 2013-07-31 東京エレクトロン株式会社 プラズマ処理装置及びそのガス排気方法
CN103337453B (zh) 2008-10-07 2017-10-24 应用材料公司 用于从蚀刻基板有效地移除卤素残余物的设备
US8562742B2 (en) * 2010-04-30 2013-10-22 Applied Materials, Inc. Apparatus for radial delivery of gas to a chamber and methods of use thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6308654B1 (en) * 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
US6444037B1 (en) * 1996-11-13 2002-09-03 Applied Materials, Inc. Chamber liner for high temperature processing chamber
US20020007791A1 (en) * 2000-06-01 2002-01-24 Takahiro Horiguchi Single-substrate-processing apparatus for semiconductor process
TW200509246A (en) * 2003-05-22 2005-03-01 Axcelis Tech Inc Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
TW200715403A (en) * 2005-09-12 2007-04-16 Matsushita Electric Industrial Co Ltd Plasma processing apparatus
TW201009979A (en) * 2008-06-25 2010-03-01 Tokyo Electron Ltd Vacuum processing apparatus

Also Published As

Publication number Publication date
JP5752238B2 (ja) 2015-07-22
US20110265887A1 (en) 2011-11-03
US8562742B2 (en) 2013-10-22
TW201222659A (en) 2012-06-01
KR20130023193A (ko) 2013-03-07
CN102870200A (zh) 2013-01-09
WO2011137010A2 (en) 2011-11-03
KR101456894B1 (ko) 2014-10-31
JP2013526060A (ja) 2013-06-20
WO2011137010A3 (en) 2012-03-08
CN102870200B (zh) 2016-04-13

Similar Documents

Publication Publication Date Title
TWI489546B (zh) 將氣體徑向傳送至腔室之裝置
TWI856756B (zh) 基板輸入/輸出腔室、處理腔室、及基板處理系統
CN103346116B (zh) 用于从蚀刻基板有效地移除卤素残余物的设备
JP7229061B2 (ja) 基板のエッチング装置及びエッチング方法
US9947559B2 (en) Thermal management of edge ring in semiconductor processing
CN105870039B (zh) 用于等离子体处理的双区式加热器
US20110269314A1 (en) Process chambers having shared resources and methods of use thereof
US8287688B2 (en) Substrate support for high throughput chemical treatment system
US20110304078A1 (en) Methods for removing byproducts from load lock chambers
KR20130031236A (ko) 트윈 챔버 프로세싱 시스템
US20100024982A1 (en) High throughput processing system for chemical treatment and thermal treatment and method of operating
JP6796692B2 (ja) 基板処理装置
US8303715B2 (en) High throughput thermal treatment system and method of operating
US8323410B2 (en) High throughput chemical treatment system and method of operating
CN115516615A (zh) 热批处理腔室
WO2010014384A1 (en) High throughput processing system for chemical treatment and thermal treatment and method of operating
CN106575619B (zh) 多基板热管理设备
US9587789B2 (en) Methods and apparatus for providing a gas mixture to a pair of process chambers
US8115140B2 (en) Heater assembly for high throughput chemical treatment system
TW202518640A (zh) 基座加熱器

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees