TWI486702B - 反射型光罩、反射型光罩之製造方法及半導體裝置之製造方法 - Google Patents

反射型光罩、反射型光罩之製造方法及半導體裝置之製造方法 Download PDF

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Publication number
TWI486702B
TWI486702B TW103128722A TW103128722A TWI486702B TW I486702 B TWI486702 B TW I486702B TW 103128722 A TW103128722 A TW 103128722A TW 103128722 A TW103128722 A TW 103128722A TW I486702 B TWI486702 B TW I486702B
Authority
TW
Taiwan
Prior art keywords
film
reflective
pattern
absorber
density
Prior art date
Application number
TW103128722A
Other languages
English (en)
Chinese (zh)
Other versions
TW201445244A (zh
Inventor
細谷守男
Original Assignee
Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Ｈｏｙａ股份有限公司 filed Critical Ｈｏｙａ股份有限公司
Publication of TW201445244A publication Critical patent/TW201445244A/zh
Application granted granted Critical
Publication of TWI486702B publication Critical patent/TWI486702B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW103128722A 2009-04-15 2010-04-15 反射型光罩、反射型光罩之製造方法及半導體裝置之製造方法 TWI486702B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009098621A JP5507876B2 (ja) 2009-04-15 2009-04-15 反射型マスクブランク及び反射型マスクの製造方法

Publications (2)

Publication Number Publication Date
TW201445244A TW201445244A (zh) 2014-12-01
TWI486702B true TWI486702B (zh) 2015-06-01

Family

ID=42981227

Family Applications (2)

Application Number Title Priority Date Filing Date
TW103128722A TWI486702B (zh) 2009-04-15 2010-04-15 反射型光罩、反射型光罩之製造方法及半導體裝置之製造方法
TW099111856A TWI454833B (zh) 2009-04-15 2010-04-15 反射型光罩基底及反射型光罩之製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW099111856A TWI454833B (zh) 2009-04-15 2010-04-15 反射型光罩基底及反射型光罩之製造方法

Country Status (4)

Country Link
US (2) US8329361B2 (enExample)
JP (1) JP5507876B2 (enExample)
KR (1) KR101800882B1 (enExample)
TW (2) TWI486702B (enExample)

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JP5275275B2 (ja) 2010-02-25 2013-08-28 株式会社東芝 基板処理方法、ｅｕｖマスクの製造方法、ｅｕｖマスクおよび半導体装置の製造方法
JP5671306B2 (ja) 2010-11-10 2015-02-18 カヤバ工業株式会社 サスペンション装置
JP5971122B2 (ja) 2011-02-01 2016-08-17 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
US8601404B2 (en) * 2011-03-14 2013-12-03 Synopsys, Inc. Modeling EUV lithography shadowing effect
JP6125772B2 (ja) * 2011-09-28 2017-05-10 Hoya株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法
JP5538637B2 (ja) * 2012-03-30 2014-07-02 Ｈｏｙａ株式会社 マスクブランク用基板、多層反射膜付き基板、透過型マスクブランク、反射型マスクブランク、透過型マスク、反射型マスク及び半導体装置の製造方法
KR102253519B1 (ko) * 2013-09-27 2021-05-18 호야 가부시키가이샤 다층 반사막 부착 기판, 마스크 블랭크, 전사용 마스크 및 반도체 장치의 제조방법
KR20150066966A (ko) 2013-12-09 2015-06-17 삼성전자주식회사 포토마스크, 포토마스크의 에러 보정 방법, 포토마스크를 이용하여 제조된 집적회로 소자 및 그 제조 방법
JP6301127B2 (ja) 2013-12-25 2018-03-28 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
US9766536B2 (en) 2015-07-17 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mask with multilayer structure and manufacturing method by using the same
US10276662B2 (en) 2016-05-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming contact trench
JP6855190B2 (ja) * 2016-08-26 2021-04-07 Hoya株式会社 反射型マスク、並びに反射型マスクブランク及び半導体装置の製造方法
KR102617017B1 (ko) 2017-08-10 2023-12-26 에이지씨 가부시키가이샤 반사형 마스크 블랭크 및 반사형 마스크
US10553428B2 (en) * 2017-08-22 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Reflection mode photomask and fabrication method therefore
US10802393B2 (en) * 2017-10-16 2020-10-13 Globalfoundries Inc. Extreme ultraviolet (EUV) lithography mask
JP6556885B2 (ja) * 2018-02-22 2019-08-07 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
US11345991B2 (en) * 2018-09-27 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method and machine of manufacture
US11221554B2 (en) 2020-01-17 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. EUV masks to prevent carbon contamination
KR102567180B1 (ko) * 2020-04-21 2023-08-16 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
JP7117445B1 (ja) 2021-12-15 2022-08-12 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク

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US20070054196A1 (en) * 2003-11-20 2007-03-08 Lee Hai W Fabrication method of extreme ultraviolet radiation mask mirror using atomic force microscope lithography
WO2008093534A1 (ja) * 2007-01-31 2008-08-07 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク
TW200844650A (en) * 2006-12-27 2008-11-16 Asahi Glass Co Ltd Reflective mask blank for EUV lithography

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JPH08213303A (ja) 1995-02-03 1996-08-20 Nikon Corp 反射型ｘ線マスク及びその製造法
JP4397496B2 (ja) * 2000-02-25 2010-01-13 Ｏｋｉセミコンダクタ株式会社 反射型露光マスクおよびｅｕｖ露光装置
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JP2002246299A (ja) * 2001-02-20 2002-08-30 Oki Electric Ind Co Ltd 反射型露光マスク、反射型露光マスクの製造方法、及び半導体素子
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JP3806702B2 (ja) * 2002-04-11 2006-08-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
JP2006040050A (ja) 2004-07-28 2006-02-09 Olympus Corp 再生装置、カメラおよび再生装置の表示切換方法
US20060222961A1 (en) * 2005-03-31 2006-10-05 Pei-Yang Yan Leaky absorber for extreme ultraviolet mask
JP4910820B2 (ja) * 2007-03-27 2012-04-04 凸版印刷株式会社 極端紫外線露光用マスク、極端紫外線露光用マスクブランク、極端紫外線露光用マスクの製造方法及びリソグラフィ方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070054196A1 (en) * 2003-11-20 2007-03-08 Lee Hai W Fabrication method of extreme ultraviolet radiation mask mirror using atomic force microscope lithography
TW200844650A (en) * 2006-12-27 2008-11-16 Asahi Glass Co Ltd Reflective mask blank for EUV lithography
WO2008093534A1 (ja) * 2007-01-31 2008-08-07 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク

Also Published As

Publication number Publication date
US20130071779A1 (en) 2013-03-21
US8329361B2 (en) 2012-12-11
US8709685B2 (en) 2014-04-29
KR101800882B1 (ko) 2017-11-23
KR20100114472A (ko) 2010-10-25
US20100266938A1 (en) 2010-10-21
JP2010251490A (ja) 2010-11-04
TW201100951A (en) 2011-01-01
TW201445244A (zh) 2014-12-01
JP5507876B2 (ja) 2014-05-28
TWI454833B (zh) 2014-10-01

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