TWI477911B - 光阻劑及其使用方法 - Google Patents

光阻劑及其使用方法 Download PDF

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Publication number
TWI477911B
TWI477911B TW099143921A TW99143921A TWI477911B TW I477911 B TWI477911 B TW I477911B TW 099143921 A TW099143921 A TW 099143921A TW 99143921 A TW99143921 A TW 99143921A TW I477911 B TWI477911 B TW I477911B
Authority
TW
Taiwan
Prior art keywords
resin
photoresist
side chain
substrate
photoresist composition
Prior art date
Application number
TW099143921A
Other languages
English (en)
Chinese (zh)
Other versions
TW201137521A (en
Inventor
吉哈德 保勒爾斯
Original Assignee
羅門哈斯電子材料有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 羅門哈斯電子材料有限公司 filed Critical 羅門哈斯電子材料有限公司
Publication of TW201137521A publication Critical patent/TW201137521A/zh
Application granted granted Critical
Publication of TWI477911B publication Critical patent/TWI477911B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2049—Ion beam lithography processes

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW099143921A 2009-12-15 2010-12-15 光阻劑及其使用方法 TWI477911B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28677409P 2009-12-15 2009-12-15

Publications (2)

Publication Number Publication Date
TW201137521A TW201137521A (en) 2011-11-01
TWI477911B true TWI477911B (zh) 2015-03-21

Family

ID=43773541

Family Applications (2)

Application Number Title Priority Date Filing Date
TW099143921A TWI477911B (zh) 2009-12-15 2010-12-15 光阻劑及其使用方法
TW103108973A TWI605310B (zh) 2009-12-15 2010-12-15 光阻劑及其使用方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103108973A TWI605310B (zh) 2009-12-15 2010-12-15 光阻劑及其使用方法

Country Status (6)

Country Link
US (1) US10295910B2 (enExample)
EP (1) EP2336828B1 (enExample)
JP (2) JP2011175241A (enExample)
KR (1) KR101857473B1 (enExample)
CN (1) CN102184851B (enExample)
TW (2) TWI477911B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014143415A (ja) * 2012-12-31 2014-08-07 Rohm & Haas Electronic Materials Llc イオン注入法
KR102195700B1 (ko) 2013-12-04 2020-12-29 삼성디스플레이 주식회사 화학증폭형 레지스트를 이용한 패턴 형성방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050130444A1 (en) * 2002-05-31 2005-06-16 Michael Rogalli Photosensitive lacquer for providing a coating on a semiconductor substrate or a mask

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4542093A (en) * 1983-07-26 1985-09-17 Fuji Photo Film Co., Ltd. Photographic silverhalide material containing two subbing layers
US4968581A (en) 1986-02-24 1990-11-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4810613A (en) 1987-05-22 1989-03-07 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
DE3721741A1 (de) 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
EP0366590B2 (en) 1988-10-28 2001-03-21 International Business Machines Corporation Highly sensitive positive photoresist compositions
US5186383A (en) 1991-10-02 1993-02-16 Motorola, Inc. Method for forming solder bump interconnections to a solder-plated circuit trace
DE69322946T2 (de) 1992-11-03 1999-08-12 International Business Machines Corp., Armonk, N.Y. Photolackzusammensetzung
KR100206664B1 (ko) * 1995-06-28 1999-07-01 세키사와 다다시 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법
KR100268967B1 (ko) 1996-01-30 2000-10-16 모기 준이치 금속 착물 형성용 수용액, 주석-은 합금도금욕 및 당해도금욕을 사용하는 도금물의 제조방법
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5861231A (en) 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
US7147983B1 (en) * 1996-10-07 2006-12-12 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
US6099713A (en) 1996-11-25 2000-08-08 C. Uyemura & Co., Ltd. Tin-silver alloy electroplating bath and tin-silver alloy electroplating process
KR100219806B1 (ko) 1997-05-27 1999-09-01 윤종용 반도체장치의 플립 칩 실장형 솔더 범프의 제조방법, 이에 따라 제조되는 솔더범프 및 그 분석방법
US5990564A (en) 1997-05-30 1999-11-23 Lucent Technologies Inc. Flip chip packaging of memory chips
JP4053631B2 (ja) * 1997-10-08 2008-02-27 Ａｚエレクトロニックマテリアルズ株式会社 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体
US6057083A (en) 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
US6124217A (en) 1998-11-25 2000-09-26 Advanced Micro Devices, Inc. In-situ SiON deposition/bake/TEOS deposition process for reduction of defects in interlevel dielectric for integrated circuit interconnects
US6245682B1 (en) 1999-03-11 2001-06-12 Taiwan Semiconductor Manufacturing Company Removal of SiON ARC film after poly photo and etch
US6153504A (en) 1999-08-16 2000-11-28 Advanced Micro Devices, Inc. Method of using a silicon oxynitride ARC for final metal layer
US6638847B1 (en) 2000-04-19 2003-10-28 Advanced Interconnect Technology Ltd. Method of forming lead-free bump interconnections
EP1393131A4 (en) * 2001-05-11 2006-08-09 Shipley Co Llc THICK-FILM PHOTO RESISTANCE AND METHOD OF USE THEREOF
KR20020090489A (ko) * 2001-05-28 2002-12-05 금호석유화학 주식회사 화학증폭형 레지스트용 중합체 및 이를 함유한 화학증폭형레지스트 조성물
JP2003122007A (ja) 2001-10-09 2003-04-25 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP4083053B2 (ja) * 2003-03-31 2008-04-30 富士フイルム株式会社 ポジ型レジスト組成物
TW200506516A (en) * 2003-04-09 2005-02-16 Rohm & Haas Elect Mat Photoresists and methods for use thereof
JP2004354417A (ja) * 2003-05-27 2004-12-16 Shin Etsu Chem Co Ltd ポジ型レジスト材料並びにこれを用いたパターン形成方法
KR100630692B1 (ko) * 2004-07-22 2006-10-02 삼성전자주식회사 포토마스크 및 포토마스크의 투과율 보정 방법
JP4533756B2 (ja) * 2005-01-07 2010-09-01 富士フイルム株式会社 イオン注入工程用ポジ型レジスト組成物及びそれを用いたイオン注入方法
KR100630749B1 (ko) * 2005-05-20 2006-10-02 삼성전자주식회사 반도체 소자의 제조방법
JP4205078B2 (ja) * 2005-05-26 2009-01-07 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP2008250227A (ja) * 2007-03-30 2008-10-16 Fujifilm Corp ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP2008262059A (ja) * 2007-04-12 2008-10-30 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターン形成方法
JP2010186647A (ja) 2009-02-12 2010-08-26 Toyota Motor Corp 燃料電池の調温システム
TW201106101A (en) * 2009-06-01 2011-02-16 Fujifilm Electronic Materials Chemically amplified positive photoresist composition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050130444A1 (en) * 2002-05-31 2005-06-16 Michael Rogalli Photosensitive lacquer for providing a coating on a semiconductor substrate or a mask

Also Published As

Publication number Publication date
EP2336828A3 (en) 2011-08-17
US20110256481A1 (en) 2011-10-20
JP2011175241A (ja) 2011-09-08
KR101857473B1 (ko) 2018-05-14
CN102184851B (zh) 2015-07-15
EP2336828B1 (en) 2018-07-11
CN102184851A (zh) 2011-09-14
JP6297519B2 (ja) 2018-03-20
TWI605310B (zh) 2017-11-11
JP2015172761A (ja) 2015-10-01
TW201423276A (zh) 2014-06-16
US10295910B2 (en) 2019-05-21
EP2336828A2 (en) 2011-06-22
TW201137521A (en) 2011-11-01
KR20110068934A (ko) 2011-06-22

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