TWI474613B - 高頻功率放大器 - Google Patents

高頻功率放大器 Download PDF

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TWI474613B
TWI474613B TW101110022A TW101110022A TWI474613B TW I474613 B TWI474613 B TW I474613B TW 101110022 A TW101110022 A TW 101110022A TW 101110022 A TW101110022 A TW 101110022A TW I474613 B TWI474613 B TW I474613B
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transistor
switching element
capacitor
power amplifier
output
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TW101110022A
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TW201251310A (en
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Shintaro Watanabe
Kazuhiro Iyomasa
Hiroaki Maehara
Jun Takaso
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7215—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the input of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7221—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7239—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers and shunting lines by one or more switch(es)

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Description

高頻功率放大器
本發明係有關於一種因應於輸出功率而切換放大器內之路徑的高頻功率放大器。
在手機或攜帶式終端機，使用在數十MHz以上之高頻帶動作的高頻功率放大器。在該高頻功率放大器，在得到28.25dBm之大功率輸出的情況、得到17dBm之中功率輸出的情況、及得到7dBm之小功率輸出的情況，分別切換放大器內的路徑。藉此，可提高各個輸出功率的動作效率(例如，參照非專利文獻1)。
在以往之高頻功率放大器，在得到小、中功率輸出時共用的路徑，藉並聯的切換元件與電容器進行阻抗匹配。
[非專利文獻]
[非專利文獻1]Proceedings of the 36th European Microwave Conference,P348~P351
可是，因為切換元件與電容器並聯，所以只能進行阻抗匹配的切換，無法同時進行路徑的切換。因此，包括電路之自由度低的問題。
本發明係為了解決該問題點而開發的，其目的在於得到一種高頻功率放大器，係可同時進行阻抗匹配的切換與路徑的切換，並可提高電路設計的自由度。
本發明之高頻功率放大器，其特徵在於包括：第1電晶體，係將從外部所輸入之高頻信號放大；第2電晶體，係將該第1電晶體之輸出信號放大；第3電晶體，係與該第1電晶體並聯，並將從外部所輸入之高頻信號放大；第1切換元件，係接在該第1電晶體的輸出與該第2電晶體的輸入之間；第2切換元件，係接在該第3電晶體的輸出與該第1切換元件之間；第3及第4切換元件，係在該第1電晶體的輸出及該第2切換元件與該第2電晶體的輸出之間串聯；及接在該第3切換元件與該第4切換元件之間的第1電容器。
根據本發明，可同時進行阻抗匹配的切換與路徑的切換，並可提高電路設計的自由度。
參照圖面，說明應用本發明之實施形態的高頻功率放大器。有對相同或對應的構成元件賦予相同的符號，並省略重複之說明的情況。
第1實施形態
第1圖係表示本發明之第1實施形態之高頻功率放大器的圖。電晶體Tr1係將從外部所輸入之高頻信號放大。電晶體Tr2係將電晶體Tr1之輸出信號放大。電晶體Tr3係與電晶體Tr1並聯，並將從外部所輸入之高頻信號放大
輸入匹配電路M1係使電晶體Tr1、Tr3之各自的輸入阻抗與特性阻抗匹配。中間匹配電路M2係使電晶體Tr1之輸出阻抗與電晶體Tr2之輸入阻抗匹配。預先匹配電路M3係使電晶體Tr3之輸出阻抗與特性阻抗匹配。輸出匹配電路M4係使電晶體Tr1、Tr2、Tr3之輸出阻抗與特性阻抗匹配。
在電晶體Tr1的輸出與電晶體Tr2的輸入之間連接切換元件SW1。在電晶體Tr3的輸出與切換元件SW1之間連接切換元件SW2。在電晶體Tr1的輸出及切換元件SW2與電晶體Tr2的輸出之間連接切換元件SW3、SW4。
在切換元件SW3與切換元件SW4之間連接電容器C1。電容器C1的一端係和切換元件SW3與切換元件SW4的連接點連接。電容器C1的另一端係接地。該電容器C1係使電晶體Tr1、Tr2之輸出阻抗與特性阻抗匹配的預先匹配電路。
接著，說明本實施形態之高頻功率放大器的動作。在得到17dBm以上之大功率輸出的情況，切換元件SW1變成ON，切換元件SW2、SW3、SW4變成OFF，而路徑1成為有效。電晶體Tr3變成OFF。電晶體Tr1將輸入端子IN所輸入之信號放大，電晶體Tr2將電晶體Tr1的輸出信號放大，並使其從輸出端子OUT輸出。
在得到7~17dBm之中功率輸出的情況，切換元件SW1、SW2變成OFF，切換元件SW3、SW4變成ON，而路徑2成為有效。電晶體Tr2、Tr3變成OFF。電晶體Tr1將輸入端子IN所輸入之信號放大，並使其從輸出端子OUT輸出。
在得到7dBm以下之小功率輸出的情況，切換元件SW1變成OFF，切換元件SW2、SW3、SW4變成ON，而路徑3成為有效。電晶體Tr1、Tr2變成OFF。電晶體Tr3將輸入端 子IN所輸入之信號放大，並使其從輸出端子OUT輸出。
如以上之說明所示，在本實施形態，使用電容器C1的預先匹配電路與切換元件SW3串聯。藉此，在路徑2及路徑3成為有效之路徑切換的切換，同時亦可進行使用電容器C1之阻抗匹配的切換。結果，可提高電路設計的自由度。
第2實施形態
第2圖係表示本發明之第2實施形態之高頻功率放大器的圖。電容器C1的一端係與切換元件SW3連接，電容器C1的另一端係與切換元件SW4連接。即，在預先匹配電路，將電容器C1串聯。其他的構成係與第1實施形態一樣。
因為以往係將切換元件與電容器並聯，所以無法使用串聯成分的元件。相對地，在本實施形態，因為預先匹配電路與切換元件SW3串聯，所以可使用串聯的電容器C1。在此情況，亦可得到與第1實施形態相同之效果。
第3實施形態
第3圖係表示本發明之第3實施形態之高頻功率放大器的圖。在切換元件SW3與切換元件SW4之間，將電感器L1與電容器C1串聯。其他的構成係與第1實施形態一樣。藉此，路徑2及路徑3之阻抗匹配的自由度增加，而可提高電晶體Tr1、Tr3的動作效率。
第4實施形態
第4圖係表示本發明之第4實施形態之高頻功率放大器的圖。在電晶體Tr2的輸出與電容器C1之間將電容器C2與切換元件SW4並聯。其他的構成係與第1實施形態一樣。因為該電容器C2成為僅在大功率輸出動作時作用的預先匹配電路，所以可提高電晶體Tr2的飽和輸出功率。
第5實施形態
第5圖係表示本發明之第5實施形態之高頻功率放大器的圖。在電晶體Tr2的輸出與接地點之間將切換元件SW5與電容器C3串聯。在電晶體Tr2的輸出與第4切換元件之間連接電感器L2。其他的構成係與第2實施形態一樣。藉此，因為可分2階段切換路徑2及路徑3的阻抗匹配，所以可提高電晶體Tr1的動作效率。
第1表係在17dBm之中功率輸出時，係表示以往之高頻功率放大器的動作效率與第5實施形態之高頻功率放大器之動作效率的比較表。從第1表得知，在第5實施形態，動作效率比習知技術提高3%。
C1‧‧‧電容器(第1電容器)
C2‧‧‧電容器(第2電容器)
C3‧‧‧電容器(第3電容器)
L1‧‧‧電感器
SW1‧‧‧切換元件(第1切換元件)
SW2‧‧‧切換元件(第2切換元件)
SW3‧‧‧切換元件(第3切換元件)
SW4‧‧‧切換元件(第4切換元件)
SW5‧‧‧切換元件(第5切換元件)
Tr1‧‧‧電晶體(第1電晶體)
Tr2‧‧‧電晶體(第2電晶體)
Tr3‧‧‧電晶體(第3電晶體)
第1圖係表示本發明之第1實施形態之高頻功率放大器的圖。
第2圖係表示本發明之第2實施形態之高頻功率放大器的圖。
第3圖係表示本發明之第3實施形態之高頻功率放大器的圖。
第4圖係表示本發明之第4實施形態之高頻功率放大器的圖。
第5圖係表示本發明之第5實施形態之高頻功率放大器的圖。
1、2、3‧‧‧路徑
Tr1、Tr2、Tr3‧‧‧電晶體
SW1、SW2、SW3、SW4‧‧‧切換元件
M1、M2、M3、M4‧‧‧匹配電路
IN‧‧‧輸入端子
OUT‧‧‧輸出端子

Claims (6)

  1. 一種高頻功率放大器，其特徵在於包括：第1電晶體，係將從外部所輸入之高頻信號放大；第2電晶體，係將該第1電晶體之輸出信號放大；第3電晶體，係與該第1電晶體並聯，並將從外部所輸入之高頻信號放大；第1切換元件，係接在該第1電晶體的輸出與該第2電晶體的輸入之間；第2切換元件，係接在該第3電晶體的輸出與該第1切換元件之間；第3及第4切換元件，係在該第1電晶體的輸出及該第2切換元件與該第2電晶體的輸出之間串聯；及接在該第3切換元件與該第4切換元件之間的第1電容器。
  2. 如申請專利範圍第1項之功率放大器，其中該第1電容器的一端係和該第3切換元件與該第4切換元件的連接點連接；該第1電容器的另一端係接地。
  3. 如申請專利範圍第1項之功率放大器，其中該第1電容器的一端係和該第3切換元件連接；該第1電容器的另一端係和該第4切換元件連接。
  4. 如申請專利範圍第1至3項中任一項之高頻功率放大器，其中更在該第3切換元件與該第4切換元件之間更包括與該第1電容器串聯的電感器。
  5. 如申請專利範圍第1至3項中任一項之高頻功率放 大器，其中在該第2電晶體的輸出與該第1電容器之間更包括與該第4切換元件並聯的第2電容器。
  6. 如申請專利範圍第1至3項中任一項之高頻功率放大器，其中在該第2電晶體的輸出與接地點之間更包括串聯的第5切換元件及第3電容器。
TW101110022A 2011-05-19 2012-03-23 高頻功率放大器 TWI474613B (zh)

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JP2012244384A (ja) 2012-12-10
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