TWI474335B - 增加記憶體的複數區塊的生命週期的系統、方法及電腦程式產品 - Google Patents

增加記憶體的複數區塊的生命週期的系統、方法及電腦程式產品 Download PDF

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TWI474335B
TWI474335B TW97144480A TW97144480A TWI474335B TW I474335 B TWI474335 B TW I474335B TW 97144480 A TW97144480 A TW 97144480A TW 97144480 A TW97144480 A TW 97144480A TW I474335 B TWI474335 B TW I474335B
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memory
life cycle
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calculating
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TW200933638A (en
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Radoslav Danilak
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Lsi Corp
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Description

增加記憶體的複數區塊的生命週期的系統、方法及電腦程式產品
本發明係關於一種記憶體，更特別地係，關於具有一有限生命週期的記憶體。
記憶體是現代企業計算系統性能的最受限制的態樣之一。記憶體的一受限制態樣為許多類型的記憶體呈現有限制的生命週期。例如，每次抹除及重新寫入時，非揮發性記憶體(例如快閃記憶體)的生命週期會減少。隨著時間及數千個抹除及重新寫入，此快閃記憶體會變成越來越不可靠。
用於減少記憶體生命週期的一普通先前技術是耗損調平(Wear Leveling)。耗損調平允許以概略相等的次數將一儲存裝置中的區塊予以抹除及寫入。此可避免一區塊較常使用、到達生命結束、及必須停止使用的情況。此減少整個裝置的儲存能力。雖然該等儲存裝置可具有預留區塊，但是該等預留區塊會用盡，且裝置的記憶體容量會下降，以致於無法使用此儲存裝置。
記憶體代理商時常保證特定百分比的記憶體有某預期壽命。例如，一快閃記憶體代理商可保證在100,000程控與抹除週期(即是持久性)之後，基於過度的錯誤修正需求，小於1%的區塊將無法使用。在此情況中，該等錯誤修正需求可針對該快閃裝置加以設定成每512個位元組有一單一位元錯誤。一些最近發展的裝置具有非常低的持久性。這些裝置需要非常大的錯誤修正需求。
此外，記憶體區塊的生命週期彼此有差異。結果，使用程控抹除週期均衡之耗損調平，當只有一指定的百分比區塊是不良(例如，1%)時，一儲存裝置可到達生命的結束。然而，多數在儲存裝置中包括的區塊可仍然發揮功能。
如此，需要用於處理有關先前技術的這些及/或其他議題。
本發明提供一種用於增加複數個記憶體區塊的生命週期之系統、方法及電腦程式產品。操作上，影響該複數個記憶體區塊的生命週期之至少一因素可加以識別。此外，基於該至少一因素，可選擇要寫入的複數個區塊。
第一圖顯示根據一具體實施例之用於增加複數個記憶體區塊的生命週期之方法100。影響複數個記憶體區塊的生命週期之至少一因素可加以識別。請參見步驟102。此外，基於該至少一因素，可選擇要寫入的複數個區塊。請參見步驟104。
在目前描述的範圍中，記憶體的生命週期可包括記憶體在任何持續時間內呈現任何想要可用性程度。例如，在各種不同具體實施例中，此生命週期可包括(但必定不限於)一想要的生命週期、一實際的生命週期、一估計的生命週期等。此外，可用性的程度是指任何可用性相關的參數，例如仍可操作的組件(例如區塊、單元等)之百分比、記憶體或組件之可信度、及/或有關此的任何其他參數。
此外，在各種不同具體實施例中，記憶體可包括(但未限於)機械式儲存裝置(例如，磁碟機等)、固態儲存裝置(例如動態隨機存取記憶體(DRAM,“Dynamic Random Access Memory”)、快閃記憶體等)、及/或任何其他儲存裝置。在記憶體包括快閃記憶體的情況中，快閃記憶體可包括(但未限於)單層式儲存(SLC,“Single-Level Cell”)裝置、多層式儲存(MLC,“Multi-Level Cell”)裝置、NOR快閃記憶體、NAND快閃記憶體、MLC NAND快閃記憶體、SLC NAND快閃記憶體等。在一具體實施例中，非揮發性記憶體裝置可包括每單元單位元NOR快閃記憶體、每單元多位元NOR快閃記憶體、每單元單位元NAND快閃記憶體、及每單元多位元NAND快閃記憶體之至少一者。
此外，在目前描述的範圍中，該因素可包括可直接或間接影響記憶體區塊的生命週期之任何因素。例如，在各種不同具體實施例中，該等因素可包括(但未限於)涉及記憶體區塊之至少一者的讀取操作期間之錯誤數(例如偵測、修正等)、一程控操作與涉及記憶體區塊之至少一者的讀取操作之間的持續時間；抹除記憶體區塊之至少一者的次數；抹除記憶體區塊之至少一者所需的持續時間、程控操作記憶體區塊之至少一者所需的持續時間、程控操作記憶體區塊至少之一者的重新嘗試數、記憶體區塊之至少一者的一頁之介入讀取數、記憶體的相鄰頁、結構與組織之介入讀取數、及/或符合上述定義之任何其他因素。記憶體區塊使用的歷史還可儲存。在此情況中，使用的歷史可用來決定因素。
更多說明資訊現將按使用者的期望，描述關於可以或無法實施參考先前架構的各種不同選擇性架構及特徵。應該特別注意，下列資訊之闡述只是說明，且不應以任何方式構成限制。下列任一特徵可選擇性合併或不排除其他描述之特徵。
第二圖顯示根據另一具體實施例之用於增加複數個記憶體區塊的生命週期之技術200。技術200還可在第一圖的細節之範圍中實施。當然(然而)，技術200可在任何想要的環境中實施。亦應該注意，上述定義可在目前的描述中應用。
如圖所示，複數個記憶區塊204的持久性202係可被監督。在此情況中，第二圖的長條係代表一特別區塊204的寫入次數。在目前描述的範圍中，持久性202是指每一記憶體區塊204的寫入與抹除週期數。因此，持久性202係對應至記憶體區塊204的使用程度。在一具體實施例中，寫入及/或抹除的次數可受監督及記錄。
藉由監督區塊204寫入次數，可決定哪些區塊為較常使用。在一具體實施例中，此監督可用來決定區塊204之任一者的寫入次數是否超過一臨限206。此外，此監督允許使用上的均等化，以致於當特定區塊的寫入次數到達臨限206時，其他低於臨限206的區塊可用於寫入。例如，區塊寫入及回收的順序可改變，以將區塊之間的持久性值的任何差異減至最少。
操作上，影響複數個記憶體204區塊生命週期的至少一因素可加以識別及/或監督。要寫入的複數個區塊然後可基於該至少一因素加以選取。在各種不同具體實施例中，可能有多個因素指出區塊204的生命週期狀態。在一具體實施例中，因素可包括與該等區塊204之每一者有關的修正錯誤數。例如，此修正的錯誤可對應至資料的讀取。
在各種不同情況，因素可能受到複數個其他因素的影響。例如，修正的錯誤數可能受到從程控操作至讀取使用多少時間、及執行多少個讀取的影響。此外，一區塊抹除及程控的次數亦可能影響修正的錯誤數。
當然，許多其他因素亦可能影響修正錯誤量。在各種不同具體實施例中，這些因素可對應至區塊204的使用時間、寫入的頻率、操作率、允許的操作總數、與生命週期的持續時間等。當然，此示例性態樣之闡述只為了說明之目的，而可能影響記憶體區塊預期壽命的因素可對應至任何態樣。
在一具體實施例中，一分數可用來決定是否改變要寫入及回收的區塊204之順序。例如，每一區塊204可具有一對應的分數功能而該分數功能係基於至少一因素。該分數功能可用來決定區塊204之每一者的分數。
此分數可用來減少在區塊204的分數功能間的值之差異。該分數還可基於影響區塊204的生命週期之一因素。該分數還可基於影響區塊204的生命週期的複數個因素。
例如，在兩記憶體區塊的情況中，一記憶體區塊可具有超過臨限206的分數，而一記憶體區塊可具有低於臨限206的分數。在此情況中，該等分數之每一者可對應至影響該等區塊生命週期的至少一因素。應該注意，該等分數可對應至任何數目之因素，如上所述。
在一具體實施例中，該等分數係表示一值，該值係對應至有關區塊生命預期的至少一因素。在此情況中，該等值的差異可反映區塊預期壽命的差異。因此，兩區塊可相等。
在一具體實施例中，均等化可包括利用(例如寫入)低於臨限206的區塊，但不利用超過臨限206的區塊。在當兩區塊對應至相等或接近等值之前，這是可能發生。此時，臨限206可增加，之後任一記憶體區塊均可被利用。
最初，所有區塊204可低於臨限206。當一區塊超過臨限206時，可將該區塊標示或識別為超過臨限206。然後，在區塊到達或超過臨限206之前，可利用低於臨限206下的區塊204。
用盡低於臨限206的所有區塊204之前，上述動作可繼續。此時，一新的臨限的設定使得全部現有區塊204是低於此新的臨限。此可在區塊204的生命週期期間一直重複。
可選擇地，可用空間的計數百分比可在均等化區塊204間的變異，以減少抹除及寫入區塊204之總數。此外，各種不同其他技術可用來減少抹除及寫入的區塊總數、連同使區塊間的變異(即是區塊回收)均等。此外，各種不同其他均等技術可用來使區塊204間的變異均等。
在一具體實施例中，多個記憶體模組可使用在一系統。在此情況中，記憶體模組可包括具有不同生命週期的記憶體模組。同樣地，系統的總記憶體生命週期可是記憶體的生命週期之總數，而不只是侷限於具有最小生命週期的記憶體模組。
在一具體實施例中，一生命週期估計器模組可用來接收命令，這些命令可用來經由一儲存匯流排接收與一系統的控制器進行溝通。生命週期估計器模組可計算一估計的生命週期，假設透過該匯流排接收的命令有被執行。在一具體實施例中，一生命週期估計器可用來監督寫入次數、及/或影響記憶體區塊204的生命週期之其他因素。該生命週期估計器模組嚴格地還可用來設定臨限206。
當然，臨限206可使用多種技術予以設定。在一具體實施例中，臨限206可為一預先決定的臨限。在另一具體實施例中，臨限206可被動態設定。該臨限還可與記憶體區塊204之至少一者有關的裝置之生命週期(例如預期、想要等)有直接關聯。
在一具體實施例中，一儲藏裝置間冗餘能力可用於減少費用及改良性能。在此具體實施例中，基於有關生命週期的任何因素，資料可在個別儲存裝置之間移動。例如，一情況係涉及該等儲存裝置之一第一者，相較於該等儲存裝置之一第二者的資料，該第一儲存裝置包括較時常覆寫的一組資料。在此情況中，在超過有關生命週期的至少一因素的臨限之後，此資料可從該第一儲存裝置移至該第二儲存裝置，且自此以後，該第一儲存裝置、或關於其的一或多個區塊/模組可用來儲存較不常寫入的資料或不再進一步使用。
為了這個目的，儲存裝置生命週期可適當分配，避免一儲存裝置或儲存裝置的一部分相對於該組其他儲存裝置的過早時間點上失效。當然，目前技術不僅可在不同儲存裝置之中應用，而且可應用在關於儲存裝置的一些部分。為了這個目的，任何記憶體組件的生命週期能夠以上述方式加以處理。
第三圖顯示根據另一具體實施例之用於增加複數個記憶體區塊的生命週期之方法300。方法300可在第一圖至第二圖的功能性之情況下實施。當然(然而)，方法300可在任何想要的環境中實施。亦應該注意，上述定義可在目前的描述中應用。
如圖所示，一臨限的定義使得所有記憶體的區塊低於該臨限。請參見步驟302。在一具體實施例中，該臨限可對應至該等區塊的使用。例如，當使用區塊時，有關區塊的使用值可接近該臨限。在另一具體實施例中，該臨限可對應至與該組區塊的預期壽命有關的至少另一因素。
例如，該臨限可對應至該等區塊的修正錯誤數。在此情況中，當使用區塊時，有關該等區塊的修正錯誤數值可接近該臨限。當然，該臨限可對應至影響該等區塊生命週期的一些因素。
一旦確認該等區塊低於一最初的臨限，是否需要回收一區塊就可決定。請參見步驟304。例如，若因素指出一區塊或一群區塊超過該臨限、或與其他區塊不成比例地使用，可決定需要回收該區塊或數個區塊。
在目前描述的範圍中，藉由垃圾收集、讀取擾動、數據淨化、修正的錯誤數、或其他事件所引起的區塊回收是指基於至少一因素以使區塊之間的變異得以均等。例如，在各種不同具體實施例中，該區塊回收可包括基於一些因素以使該等區塊間的變異均等，該等因素可為：在讀取/寫入期間偵測的錯誤數、在一讀取/寫入期間修正的錯誤數、抹除區塊的時間長度、區塊程控的時間長度、程控期間所利用的登錄數、一頁面的介入讀取數、一相鄰頁面的介入讀取數、一區塊的抹除與程控週期數、及/或任何其他因素。
若決定需要回收一區塊，在設定成低於該臨限的區塊中之所有區塊可配置成將要寫入。請參見步驟306。例如，低於一臨限的區塊而不是超過該臨限的區塊或多個區塊可被利用在後續之一記憶體操作。
一旦設定成低於該臨限的區塊組中之所有區塊配置成將要寫入，然後決定任何該區塊是否超過該臨限。請參見步驟308。例如，低於該臨限的區塊集中之所有區塊可被寫入直到一區塊超過該臨限。
若一區塊已超過該臨限，該區塊可置入對應至超過該臨限的區塊之區塊集中。請參見步驟310。若區塊未超過該臨限，該區塊可保留在低於該臨限的區塊集中，並可繼續利用。
然後，決定是否用盡所有低於臨限的區塊。請參見步驟312。換句話說，決定低於該臨限之區塊集中的所有區塊是否包括在超過該臨限之區塊集中。
若所有低於該臨限的區塊已用盡，可設定新的臨限，並將全部現有區塊定義成低於新的臨限。請參見步驟314。一旦已設定新的臨限，再次決定是否需要回收區塊。此可在記憶體區塊的生命週期上繼續。
應該注意，新的及最初的臨限可基於各種不同標準而設定。例如，臨限可基於區塊的預期使用而設定。在一具體實施例中，臨限可為一預先決定的臨限。在另一具體實施例中，臨限可基於記憶體區塊使用而決定。
第四圖顯示根據一具體實施例之基於一寫入頻率，將資料寫至不同儲存裝置之方法400。方法400還可在第一圖至第三圖的功能性與架構的情況下實施。當然(然而)，方法400可在任何想要的環境中實施。亦應該注意，上述定義可在目前的描述中應用。
如圖所示，資料寫入的頻率可加以識別。請參見步驟402。此外，複數個不同類型的儲存裝置可基於該頻率而選用來寫入資料。請參見步驟404。
在一具體實施例中，該選擇可基於一臨限。例如，若資料寫入的頻率超過一臨限，一特定的儲存裝置可選用來寫入該資料。不同類型的儲存裝置還可包括一SLC和一MLC裝置、一MLC和具不同持久性的MLC、SLC和DRAM、MLC和DRAM。當然，在各種不同其他具體實施例中，不同類型的儲存裝置可包括任何數量的裝置，包括各種不同類型的記憶體。
在另一具體實施例中，至少兩不同類型記憶體可整合在一裝置。例如，快閃MLC和SLC記憶體可組合在一裝置上。如另一範例所示，兩不同類型快閃MLC可整合在一裝置中。在仍然另一範例中，一裝置中的混合記憶體類型可程式化決定。在一情況中，有關SLC快閃記憶體的儲存裝置的一部分可決定，且有關MLC快閃記憶體的儲存裝置的一部分可決定。
如一特定範例所示，可決定來自一特別應用或程式的資料可使用高頻率寫入。在此情況中，一SLC裝置可選擇寫入該資料。另一方面，可決定來自一特別應用或程式、或磁碟的特定位置、或來自特別存取模式的資料可使用低頻率寫入。在此情況中，一MLC裝置可選用來寫入該資料。當然，這只是一範例，因為任何數量的裝置可基於識別的頻率加以選取。
在一具體實施例中，一生命週期的估計器模組可用來經由一儲存匯流排接收與一系統的控制器進行溝通的命令。該生命週期估計器模組可監督頻率、以及計算估計的生命週期，假設透過該匯流接收的命令被執行。當然，頻率能夠以多種方式決定，且未限於藉由生命週期估計器模組加以識別。
在各種不同具體實施例中，在前面具體實施例中提到的記憶體可包括一機械式儲存裝置(例如一磁碟機，包括一SATA磁碟機、一SAS磁碟機、一光纖通道磁碟機、IDE磁碟機、ATA磁碟機、CE磁碟機、USB磁碟機、智慧卡磁碟機、MMC磁碟機等)、及/或一非機械式儲存裝置(例如半導體式儲存裝置等)。此非機械式記憶體可例如包括揮發性或非揮發性記憶體。在各種不同具體實施例中，非揮發性記憶體裝置可包括快閃記憶體(例如每單元單位元NOR快閃記憶體、每單元多位元NOR快閃記憶體、每單元單位元NAND快閃記憶體、每單元多位元NAND快閃記憶體、每單元多層式及/或多位元NAND快閃記憶體、大區塊快閃記憶體、電阻式記憶體、相變記憶體、磁性記憶體等)。雖然在此闡述了各種不同記憶體的範例，但是應該注意，各種不同原則可適用於由於在此執行的各種不同操作所導致生命週期的減少之任何類型記憶體。
第五圖說明可實施各種不同先前具體實施例的各種不同架構及/或功能之示例性系統500。例如，示例性系統500可代表在一些先前具體實施例中闡述的電腦。上面闡述的各種不同裝置可甚至為系統500的一組件。
如圖所示，一系統500之提供包括至少一主機處理器501，主機處理器501連接至一通信匯流排502。系統500亦包括主記憶體504。控制邏輯(軟體)與資料是儲存在可採用隨機存取記憶體(RAM,“Random Access Memory”)形式的主記憶體504。
系統500亦包括一圖形處理器506與一顯示器508(如一電腦監視器)。系統500亦可包括一輔助儲存裝置510。輔助儲存裝置510包括例如一硬碟機及/或一可移除儲存磁碟機，代表一軟碟機、一磁帶機、一光碟機等。可移除儲存磁碟機能夠以熟知的方式從可移除儲存模組讀取、及/或寫入。
電腦程式、或電腦控制邏輯演算法可儲存在主記憶體504及/或輔助儲存裝置510。當電腦程式執行時，此電腦程式可使系統500執行各種不同功能。記憶體504、儲存裝置510及/或任何其他儲存裝置是電腦可讀媒體之可能範例。
在一具體實施例中，各種不同先前圖式的架構及/或功能可在主機處理器501、圖形處理器506、輔助儲存裝置510、一可為主機處理器501和圖形處理器506二者能力之至少一部分積體電路(未在圖顯示)、一晶片組(即是一組積體電路，其設計上可執行相關功能的模組)、及/或用於此目的之任何其他積體電路的情況下實施。
各種不同先前圖式的架構及/或功能可在一般電腦系統、一電路板系統、一專屬於娛樂目的之遊戲機控制系統、一應用特殊系統、及/或任何其他期望系統的範圍中實施。例如，系統500可採用一桌上型電腦、膝上型電腦、及/或任何其他類型邏輯的形式。系統500可採用各種不同其他裝置的形式，包括(但未限於)一個人數位助理(PDA,“Personal Digital Assistant”)裝置、一行動電話裝置、一電視機等。
此外，雖然未在圖式中顯示，但是系統500可耦合至一網路(例如一電信網路、區域網路(LAN,“Local Area Network”)、無線網路、廣域網路(WAN,“Wide Area Network”)，例如網際網路、對等網路、電纜網路等)，供通信目的使用。
雖然上面已描述各種不同具體實施例，但是應該瞭解，這些不同具體實施例只經由範例描述，而不是限制。因此，一較佳具體實施例的廣度及範疇應不受到上述任一示例性具體實施例的限制，而是只根據下列申請專利範圍及其同等物的定義。
500．．．系統
501．．．主機處理器
502．．．匯流排
504．．．主記憶體
506．．．圖形處理器
508．．．顯示器
510．．．輔助儲存裝置
第一圖顯示根據一具體實施例之用於增加複數個記憶體區塊的生命週期之方法。
第二圖顯示根據另一具體實施例之用於增加複數個記憶體區塊的生命週期之技術。
第三圖顯示根據另一具體實施例之用於增加複數個記憶體區塊的生命週期之方法。
第四圖顯示根據一具體實施例之基於一寫入頻率，將資料寫至不同儲存裝置之方法。
第五圖描述可實施各種不同先前具體實施例的各種不同架構及/或功能性之示例性系統。

Claims (20)

  1. 一種增加記憶體複數個區塊的一生命週期之方法，其包含：至少部分地基於複數個區塊之每一者之可用空間之一個別計數百分比而針對該複數個區塊之每一者計算一個別生命週期期望(expectancy)分數；至少部分地基於至少部分該等個別生命週期期望分數，決定要寫入及回收該等區塊的一順序，及其中當在該等區塊之間之生命週期期望分數變異被均等化時，被抹除及寫入之該等區塊之一總數被最小化。
  2. 如申請專利範圍第1項之方法，其中該計算係進一步至少部分地基於在涉及該等區塊之每一者的一個別讀取操作期間所發生之個別錯誤數，該等錯誤為複數個。
  3. 如申請專利範圍第2項之方法，其中該等錯誤為偵測到的錯誤。
  4. 如申請專利範圍第2項之方法，其中該等錯誤是經修正的錯誤。
  5. 如申請專利範圍第1項之方法，其中該計算係進一步至少部分地基於涉及在該等區塊之每一者的一個別程控操作與一個別讀取操作之間的一個別持續期間。
  6. 如申請專利範圍第1項之方法，其中該計算係進一步至少部分地基於被個別抹除之該等區塊之每一者的一個別次數。
  7. 如申請專利範圍第1項之方法，其中該計算係進一步至少部分地基於個別抹除該等區塊之每一者所需的一個別持續時間。
  8. 如申請專利範圍第1項之方法，其中該計算係進一步至少部分地基於個別程控該等區塊之每一者所需的一個別持續時間。
  9. 如申請專利範圍第1項之方法，其中該計算係進一步至少部分地基於個別程控該等區塊之每一者所需的一個別重新嘗試次數。
  10. 如申請專利範圍第1項之方法，其中該計算係進一步至少部分地基於與該等區塊之每一者相關聯的一頁面之一個別介入讀取數。
  11. 如申請專利範圍第1項之方法，其中該計算係進一步至少部分地基於與該等區塊之每一者相關聯的一相鄰頁面之一個別介入讀取數。
  12. 如申請專利範圍第1項之方法，其中先寫入該等區塊之中之一具一較長估計生命週期第一區塊，之後再寫入該等區塊之中之一具一較短估計生命週期的第二區塊。
  13. 如申請專利範圍第12項之方法，其中該等區塊之中之具該較短估計生命週期的該第二區塊之該個別生命週期期望分數係高於針對多個生命週期期望分數而建立之一臨限值。
  14. 如申請專利範圍第13項之方法，其中該等區塊之中之具該較長估計生命週期的該第一區塊之該個別生命週期期望分數係低於針對多個生命週期期望分數 而建立之該臨限值。
  15. 如申請專利範圍第1項之方法，其中該記憶體包括一機械式儲存裝置。
  16. 如申請專利範圍第1項之方法，其中該記憶體包括一揮發性記憶體裝置。
  17. 如申請專利範圍第1項之方法，其中其中該記憶體包括一非揮發性記憶體裝置。
  18. 如申請專利範圍第17項之方法，其中該非揮發性記憶體裝置包括一每單元單位元NOR快閃記憶體、一每單元多位元NOR快閃記憶體、一每單元單位元NAND快閃記憶體、一每單元多位元NAND快閃記憶體之至少一者。
  19. 如申請專利範圍第1項之方法，更包括儲存該等區塊的一使用歷史。
  20. 一種電腦可讀媒體，其具有儲存於其中之一組指令，當該組指令由一處理元件執行時使該處理元件執行多個功能，其包含：至少部分地基於複數個區塊之每一者之可用空間之一個別計數百分比而針對該複數個區塊之每一者計算一個別生命週期期望分數；至少部分地基於至少部分該等個別生命週期期望分數，決定要寫入及回收該等區塊的一順序；及其中當在該等區塊之間之生命週期期望分數變異被均等化時，被抹除及寫入之該等區塊之一總數被最小化。
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