CN101874240B - 增加存储器的多个块的寿命 - Google Patents

增加存储器的多个块的寿命 Download PDF

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CN101874240B
CN101874240B CN2008801168271A CN200880116827A CN101874240B CN 101874240 B CN101874240 B CN 101874240B CN 2008801168271 A CN2008801168271 A CN 2008801168271A CN 200880116827 A CN200880116827 A CN 200880116827A CN 101874240 B CN101874240 B CN 101874240B
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拉多斯拉夫·达尼拉克
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Seagate Technology LLC
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Abstract

本发明提供了一种用于增加存储器的多个块的寿命的系统、方法以及计算机程序产品。在操作中，确定影响存储器的多个块的寿命的至少一个因子。此外，基于该至少一个因子选择多个块中要进行写入的块。

Description

增加存储器的多个块的寿命
技术领域
本发明涉及一种存储器，更具体地涉及一种具有有限寿命的存储器。
背景技术
存储器是制约现代企业计算系统的性能的重要方面之一。制约存储器的一个方面是许多类型的存储器呈现出有限寿命的事实。例如，诸如闪存的非易失性存储器的寿命随着每次被擦除和重写而减少。经过长时间的使用以及数以千计的擦除和重写，这样的闪存会变得越来越不可靠。
一种用于减缓存储器寿命减少的通用的现有技术是均衡损耗(wear leveling)。均衡损耗使得存储设备内的块以粗略相等的次数被擦除和写入。这避免了一个块被频繁地使用、达到寿命末期而必须停止使用的情形。这样会减小整个设备的存储容量。尽管存储设备可以具有备用的块，但是这些备用的块会被用尽而使设备的存储容量降低，这会使得存储设备不可以使用。
存储器供应商通常会保证存储器一定百分比的预期寿命。例如，闪存供应商可以保证在100,000个编程和擦除周期(即，耐久性)之后，根据超出的错误校正要求(error correction requirement)，小于1％的块将不能使用。在这种情况下，错误校正要求可以被设置为校正闪存设备的每512字节的单比特错误。一些近来开发的设备具有更低的耐久性。这些设备需要更大的错误校正要求。
此外，存储器的块的寿命可以变化。因此，使用均衡多个程序擦除周期的损耗均衡，存储设备只在特定百分比(例如，1％)的块运作不良时才达到寿命末期。然而，包含在存储设备中的大多数块仍是可用的。
因此，我们需要解决与现有技术相关联的这些和/或其他的问题。
发明内容
本发明提供了一种用于增加存储器的多个块的寿命的系统、方法以及计算机程序产品。在操作中，确定影响存储器的多个块的寿命的至少一个因子。此外，基于该至少一个因子选择多个块中要进行写入的块。
附图说明
图1示出了根据一个实施例的用于增加存储器的多个块的寿命的方法。
图2示出了根据另一实施例的用于增加存储器的多个块的寿命的技术。
图3示出了根据另一实施例的用于增加存储器的多个块的寿命的方法。
图4示出了根据一个实施例的用于基于写入频率将数据写入不同存储设备的方法。
图5示出了实施有前述各个实施例的各个体系结构和/或功能(functionality)的示例性系统。
具体实施方式
图1示出了根据一个实施例的用于增加存储器的多个块的寿命的方法100。如图所示，确定影响存储器的多个块的寿命的至少一个因子。参见操作102。另外，基于该至少一个因子选择多个块中要进行写入的块。参见操作104。
在本说明书的上下文中，存储器的寿命可以包括任意的持续时间，在该持续时间期间内，存储器呈现出任意期望的可用性的等级。例如，在各个实施例中，这种寿命可以包括，但不限于，期望的寿命、实际的寿命、估计的寿命等。此外，可用性的等级可以指任何与可用性有关的参数，例如仍能使用的组件(例如，块、单元等)的百分比、存储器或其组件的可靠性、和/或有关该问题的其他任何参数。
此外，在各个实施例中，存储器可以包括但不限于：机械存储设备(例如，磁盘驱动器等)、固态存储设备(例如，动态随机存取存储器(DRAM)、闪存等)、和/或其他的任何存储设备。在存储器包含闪存的情况下，该闪存可以包括但不限于：单层单元(SLC)设备、多层单元(MLC)设备、NOR闪存、NAND闪存、MLC NAND闪存、SLC NAND闪存等。在一个实施例中，非易失性存储设备可以包括每单元单比特的NOR闪存、每单元多比特的NOR闪存、每单元单比特的NAND闪存以及每单元多比特的NAND闪存中的至少一个。
此外，在本说明书的上下文中，因子可以包括能够直接或间接地影响存储器的块的寿命的任意因子。例如，在各个实施例中，因子可以包括但不限于：在涉及存储器的至少一个块的读取操作期间的错误(如，检测到的、被校正的等)数量、在涉及存储器的至少一个块的编程操作与读取操作之间的持续时间、对存储器的至少一个块进行擦除的次数、擦除存储器的至少一个块所需要的持续时间、对存储器的至少一个块进行编程所需要的持续时间、对存储器的至少一个块进行编程所需要的重试次数、存储器的至少一个块的页的插入读取(intervening read)的数量、存储器的相邻页、结构和组织中的插入读取的数量、和/或符合上述定义的其他任何因子。作为选择，可存储存储器的块的使用历史。在这种情况下，可以利用该使用历史来确定因子。
现在，将阐述关于各个可选体系结构和特征的更具说明性的信息，前述的架构可以利用这些体系结构和特征而根据用户的期望决定实施或不实施。应当特别注意，所阐述的以下信息是出于示例性目的的，而不应解释为以任何方式进行限定。以下特征中的任何一个可以选择性地与所描述的其他特征之外的特征进行结合或不结合。
图2示出了根据另一实施例的用于增加存储器的多个块的寿命的技术200。作为选择，本技术200可以在图1的详细内容的背景下实施。当然，技术200还可以在任何期望的环境下实施。还应当注意，在本说明书中可以应用前述的定义。
如图所示，可以监控存储器的多个块204的耐久性202。在这种情况下，图2中的条形表示对特定块204的写入数量。在本说明书的上下文中，耐久性202指的是对存储器的每个块204的写入和擦除周期的数量。因而，耐久性202对应于存储器的块204的使用。在一个实施例中，可以监控并记录写入和/或擦除的数量。
通过监控块204的写入数量，可以确定哪个块被利用得更频繁。在一个实施例中，可以使用该监控来确定任何一个块204的写入数量是否超过阈值206。另外，这样的监控可以使使用均等，从而当某些块的写入数量达到阈值206时，可以利用低于阈值206的其他块进行写入。例如，可以改变块被写入和重复利用的顺序，以将块之间的耐久值的任意差值最小化。
在操作中，可以确定和/或监控影响存储器的多个块204的寿命的至少一个因子。然后，可以基于该至少一个因子从多个块中选择要进行写入的块。在各个实施例中，从寿命观点来看，可存在指示块204的状态的多个因子。在一个实施例中，因子可以包括与每个块204相关联的校正错误的数量。例如，这种校正错误可以对应于数据的读取。
在各种情况下，该因子可以受多个其他因子影响。例如，校正错误的数量会受从编程操作到读取的过程中逝去的时间的多少影响，以及会受执行了多少次读取影响。另外，对块进行擦除和编程的次数也会影响校正错误的数量。
当然，许多其他的因子也会影响校正错误的数量。在各个实施例中，因子可以对应于块204的使用时段、写入的频率、操作的速率、允许的操作的总数量以及寿命的持续时间等。当然，阐述这些示例性方面只是为了示意性目的，因为因子可以对应于会影响存储器的块的预期寿命的任何方面。
在一个实施例中，可以利用分数来确定是否改变块204被写入和重复利用的顺序。例如，每个块204均可以具有基于至少一个因子的对应的分数函数。可以利用该分数函数来确定每个块204的分数。
可以利用该分数将块204的分数函数的值之间的差最小化。作为选择，该分数可以基于影响块204的寿命的一个因子。作为另一种选择，该分数可以基于影响块204的寿命的多个因子。
例如，在两个存储器的块的情况下，一个存储器的块可能具有高于阈值206的分数，而一个可能具有低于阈值206的分数。在这种情况下，每个分数均可以对应于影响块的寿命的至少一个因子。应当注意，分数可以对应于任何数量的因子，如以上所提到的。
在一个实施例中，分数可以表现为对应于与块的预期寿命相关的至少一个因子的值。在这种情况下，值之间的差会影响块的预期寿命之间的差。因而，可以将两个块均等化。
在一个实施例中，上述均等化可以包括利用(例如，写入)低于阈值206的块，而不利用高于阈值206的块。该均等化会一直进行，直到两个块对应于相等的或接近相等的值的点。在该点处，可以增加阈值206，从而可以利用任一存储块。
初始，所有的块均低于阈值206。当块超过阈值206时，其可以被标记或以其他方式被确定为超过阈值206的块。然后，可以利用低于阈值206的块204，直到他们达到或超过阈值206。
该操作可以一直继续，直到所有低于阈值206的块204均被用尽。在该点处，可以设置新的阈值，使得所有现有的块204均低于该新的阈值。这种操作可以在块204的整个寿命中重复。
作为选择，在对块204之间的变化进行均等化期间，可以利用自由空间(free space)的计数百分比(count percentage)，以将被擦除和写入的块204的总数最小化。另外，可以利用各种其他的技术来将被擦除和写入的块的总数最小化，并对块之间的变化进行均等化(即，块收回(block reclamation))。此外，可以利用各种其他的均等化技术来对块204之间的变化进行均等化。
在一个实施例中，可以在系统中利用多个存储器模块。在这种情况下，存储器模块可以包括具有不同寿命的存储器模块。这样，系统的总的存储器寿命可以达到多个存储器的寿命的总和，与受限于最小寿命的存储器模块相反。
在一个实施例中，寿命估计器模块可以用于经由存储器总线接收通信至系统控制器的命令。假定执行通过总线接收到的命令，则寿命估计器模块可以计算估计的寿命。在一个实施例中，可以利用寿命估计器来监控写入的次数和/或影响存储器块204的寿命的其他因子。严格地讲，作为选择，可以利用寿命估计器模块设置阈值206。
当然，可以使用各种技术来设置阈值206。在一个实施例中，阈值206可以是预定的阈值。在另一实施例中，阈值206可以是动态设置的。作为选择，阈值可以直接相关于与至少一个存储器的块204相关联的设备的寿命(例如，预期的、期望的等)。
在一个实施例中，可以利用内部存储设备多余的容量，以降低成本并提高性能。在这样的实施例中，基于与其寿命相关联的任何因子，数据可以在独立的存储设备之间移动。例如，可以涉及一种情形，多个存储设备中的第一存储设备包含一组数据，该数据相对于多个存储设备中的第二存储设备的数据被更频繁地重写。在这种情况下，在超过与寿命相关联的至少一个因子的阈值之后，这样的数据可以从第一存储设备移动到第二存储设备，因此第一存储设备或其一个或多个块/模块可以用于存储较不频繁写入的数据或从进一步的使用中收回。
所以，可以恰当地分布存储设备寿命，以避免一个存储设备或存储设备的一部分在相对于一组的其他存储设备的过早的时间点出现故障。当然，本技术不但可以应用在不同存储设备之间，还可以应用在其部分中。因此，任何存储组件的寿命均可以以这种方式管理。
图3示出了根据另一实施例的用于增加存储器的多个块的寿命的方法300。作为选择，本方法300可以在图1～图2的功能的背景下实施。当然，方法300还可以在任何期望的环境下执行。还应当注意，在本说明书中可以应用前述的定义。
如图所示，阈值被定义成使得存储器的所有块均低于阈值。参见操作302。在一个实施例中，阈值可以对应于块的使用。例如，当使用块时，与块相关联的使用值可以接近阈值。在另一实施例中，阈值可以对应于与一组块的预期寿命相关联的至少一个其他因子。
例如，阈值可以对应于块的校正错误的数量。在这种情况下，当块被使用时，与块相关联的校正错误的数量的值可以接近阈值。当然，阈值可以对应于影响块的寿命的任意数目的因子。
一旦初始阈值被确定(其中块低于该阈值)，就确定块是否需要被收回。参见操作304。例如，如果因子指示一个块或一组块高于阈值或已经不匀称地用于其他的块，则可以确定该块或该多个块需要被收回。
在本说明书的上下文中，块收回(block reclaiming)(该动作可以由无用单元收集、读取干扰、擦去、校正错误的数量或其他事件触发)指的是基于至少一个因子对块之间的变化进行均等化。例如，在各个实施例中，块收回可以包括：基于在读/写过程中检测到的错误的数量、在读/写过程中校正的错误的数量、擦除块的时间长度、对块进行编程的时间长度、在编程过程中利用的条目(entry)的数量、页的插入读取的数量、邻近页的插入读取的数量、块的擦除和编程周期的数量、和/或任何其他因子，对块之间的变化进行均等化。
如果确定块需要被收回，则将块的集合中低于阈值的块分配为被写入。参见操作306。例如，可以在存储器操作中利用低于阈值的块，这与块的集合中高于阈值的块或多个块相反。
一旦将块的集合中低于阈值的(多个)块分配为被写入，就确定了任意块是否超过阈值。参见操作308。例如，块的集合中低于阈值的块可以被写入，直到确定该块超过阈值。
如果确定块超过阈值，则将该块放置在对应于超过阈值的块的块集合中。参见操作310。如果该块没有超过阈值，则该块可以保留在低于阈值的块的集合中并可以继续利用。
然后，确定所有低于阈值的块是否均已用尽。参见操作312。换言之，确定对应于低于阈值的块的块集合中的所有块是否已经包含在对应于高于阈值的块的块集合中。
如果所有低于阈值的块均已用尽，则设置新的阈值，并且所有现有的块均被定义为低于新的阈值。参见操作314。一旦设置了新的阈值，就可以再次确定块是否需要被收回。作为选择，这可以在存储器的块的整个寿命期间内继续。
应注意，可以基于各种标准设置新的阈值和初始阈值。例如，可以基于块的预期使用来设置阈值。在一个实施例中，该阈值可以是预定的阈值。在另一实施例中，可以基于存储器的块的使用来确定该阈值。
图4示出了根据一个实施例的用于基于写入频率将数据写入不同存储设备的方法400。作为选择，本方法400可以在图1～图3的功能和体系结构的背景下实施。当然，方法400还可以在任何期望的环境下执行。还应当注意，在本说明书中可以应用前述的定义。
如图所示，确定写入数据的频率。参见操作402。此外，基于该频率从多个不同类型的存储设备中选择要写入数据的存储设备。参见操作404。
在一个实施例中，该选择可以是基于阈值进行的。例如，如果写入数据的频率超过阈值，则可以选择特定存储设备来写入数据。作为选择，不同类型的存储设备可以包括SLC设备和MLC设备、具有不同耐久性的两个MLC、SLC和DRAM、MLC和DRAM。当然，在各种其他的实施例中，不同类型的存储设备可以包括任意数目的设备，包括各种不同类型的存储器。
在另一实施例中，至少两个不同类型的存储器可以集成在一个设备中。例如，闪存MLC和SLC可以组合在一个设备上。作为另一示例，两种不同类型的闪存MLC可以集成在一个设备中。在又一示例中，可以以编程方式确定一个设备中的存储器类型的混合。在一种情况下，可以确定与SLC闪存相关联的存储设备的一部分，并且可以确定与MLC闪存相关联的存储设备的一部分。
作为具体的示例，可以确定来自特定应用或程序的数据以高频率写入。在这种情况下，可以选择SLC设备来写入数据。另一方面，来自特定应用或程序、或磁盘的特定位置、或来自特定存取模式的数据以低频率写入。在这种情况下，可以选择MLC设备来写入数据。当然，这仅仅是示例，因为基于确定的频率可以选择任意数量的设备。
在一个实施例中，寿命估计器模块可以用于经由存储器总线接收通信至系统控制器的命令。假定通过总线接收到的(多个)命令被执行，则寿命估计器模块可以监控频率并计算估计的寿命。当然，频率可以以各种方式进行确定，并且不局限于由寿命估计器模块进行确定。
应当注意，在各个实施例中，前述实施例中所提到的存储器可以包括机械存储设备(例如磁盘驱动器，包括SATA磁盘驱动器、SAS磁盘驱动器、光纤通道磁盘驱动器、IDE磁盘驱动器、ATA磁盘驱动器、CE磁盘驱动器、USB磁盘驱动器、智能卡磁盘驱动器、MMC磁盘驱动器等)和/或非机械存储设备(例如，基于半导体的存储器等)。例如，这样的非机械存储器可以包括易失性或非易失性存储器。在各个实施例中，非易失性存储设备可以包括闪存(例如，每单元单比特的NOR闪存、每单元多比特的NOR闪存、每单元单比特的NAND闪存、每单元多比特的NAND闪存、每单元多层(level)和/或多比特的NAND闪存、大块闪存、阻性存储器(resistive memory)、相变存储器、磁性存储器等)。尽管本文阐述了存储器的多个示例，但是应当注意，各种原理可以应用于任何类型的存储器，存储器的寿命会由于在其上执行各种操作而减少。
图5示出了实施有前述各个实施例的各个体系结构和/或功能的示例性系统500。例如，示例性系统500可以代表在上述一些实施例中阐述的计算机。此外，上述各个装置均可以是系统500的组件。
如图所示，提供了一种系统500，包括连接至通信总线502的至少一个主机处理器501。系统500还包括主存储器504。控制逻辑(软件)和数据存储在主存储器504中，主存储器可以采取随机存取存储器(RAM)的形式。
系统500还可以包括图像处理器506和显示器508(即，计算机监视器)。系统500还可以包括辅助存储器510。辅助存储器510包括例如硬盘驱动器和/或以软盘驱动器、磁带驱动器、光盘驱动器等为代表的可移动存储驱动器。可移动存储驱动器以已知的方式从可移动存储模块读取数据和/或将数据写入可移动存储模块。
计算机程序、或计算机控制逻辑算法可以存储在主存储器504和/或辅助存储器510中。当执行这种计算机程序时，使能系统500以执行各个功能。主存储器504、辅助存储器510和/或任何其他的存储器是计算机可读介质的可行性示例。
在一个实施例中，之前各图的体系结构和/或功能可以在主机处理器501、图像处理器506、辅助存储器510、能够容纳主处理器501和图像处理器506的至少一部分的集成电路(未示出)、芯片组(即，被设计用于运行并作为用于执行相关功能的模块进行销售的一组集成电路等)、和/或用于该问题的任何其他的集成电路的上下文中实施。
进一步地，之前各图的体系结构和/或功能可以在通用计算机系统、电路板系统、专用于娱乐目的的游戏控制台系统、专用系统、和/或其他任何期望的系统的上下文中实施。例如，系统500可以采取桌上型计算机、膝上型计算机、和/或其他任何类型的逻辑电路的形式。进一步地，系统500可以采取其他各种设备的形式，包括但不限于：个人数字助理(PDA)设备、移动电话设备、电视等。
此外，尽管未示出，但是为了通信的目的，系统500可以连接至网络(例如，电信网、局域网(LAN)、无线网、诸如因特网的广域网(WAN)、对等网路、电缆网络等)。
尽管上文已经描述了各个实施例，但是应理解，这些实施例只是以示例的方式给出，而并不进行限定。因此，优选实施例的宽度和范围不应局限于任何上述的示例性实施例，而应当只根据以下的权利要求及其等同替换物对其进行限定。

Claims (22)

1.一种用于增加存储器的多个块的寿命的方法，包括：
至少部分地基于存储器的多个块中的每一个的自由空间的相应计数百分比，来计算每个所述块的相应的寿命预期分数；以及至少部分地基于所述相应的寿命预期分数中的至少一些，来确定写入和重复利用所述块的顺序；以及
其中，在使所述块之间的寿命预期分数变化均等化的同时，将所擦除和写入的所述块的总数量最小化。
2.根据权利要求1所述的方法，其中，所述计算进一步至少部分地基于涉及每个所述块的相应读取操作过程中的错误的相应数量。
3.根据权利要求2所述的方法，其中，所述错误是检测到的错误。
4.根据权利要求2所述的方法，其中，所述错误是被校正的错误。
5.根据权利要求1所述的方法，其中，所述计算进一步至少部分地基于涉及每个所述块的相应编程操作与相应读取操作之间的相应持续时间。
6.根据权利要求1所述的方法，其中，所述计算进一步至少部分地基于每个所述块分别进行擦除的相应次数。
7.根据权利要求1所述的方法，其中，所述计算进一步至少部分地基于分别擦除每个所述块所需要的相应持续时间。
8.根据权利要求1所述的方法，其中，所述计算进一步至少部分地基于对每个所述块分别进行编程所需要的相应持续时间。
9.根据权利要求1所述的方法，其中，所述计算进一步至少部分地基于对每个所述块分别进行编程所需要的重试的相应次数。
10.根据权利要求1所述的方法，其中，所述计算进一步至少部分地基于与每个所述块相关联的页的插入读取的相应数量。
11.根据权利要求1所述的方法，其中，所述计算进一步至少部分地基于与每个所述块相关联的相邻页中的插入读取的相应数量。
12.根据权利要求1所述的方法，其中，所述块中具有较长估计寿命的第一块在所述块中具有较短估计寿命的第二块之前被写入。
13.根据权利要求12所述的方法，其中，所述块中具有较短估计寿命的所述第二块的相应的寿命预期分数高于针对寿命预期分数所确定的阈值。
14.根据权利要求13所述的方法，其中，所述块中具有较长估计寿命的所述第一块的相应的寿命预期分数低于针对寿命预期分数所确定的所述阈值。
15.根据权利要求1所述的方法，其中，所述存储器包括机械存储设备。
16.根据权利要求1所述的方法，其中，所述存储器包括易失性存储设备。
17.根据权利要求1所述的方法，其中，所述存储器包括非易失性存储设备。
18.根据权利要求17所述的方法，其中，所述非易失性存储设备包括每单元单比特的NOR闪存、每单元多比特的NOR闪存、每单元单比特的NAND闪存、以及每单元多比特的NAND闪存中的至少一个。
19.根据权利要求1所述的方法，进一步包括存储所述块的使用历史。
20.一种用于增加存储器的多个块的寿命的装置，包括：
用于至少部分地基于存储器的多个块中的每一个的自由空间的相应百分比来计算每个所述块的相应的寿命预期分数的装置；
用于至少部分地基于所述相应的寿命预期分数中的至少一些来确定写入和重复利用所述块的顺序的装置；以及
其中，在使所述各块之间的寿命预期分数变化均等化的同时，将所擦除和写入的所述块的总数量最小化。
21.根据权利要求20所述的装置，其中，所述存储器包括非易失性存储器设备。
22.根据权利要求21所述的装置，其中，所述非易失性存储设备包括每单元单比特的NOR闪存、每单元多比特的NOR闪存、每单元单比特的NAND闪存、以及每单元多比特的NAND闪存中的至少一个。
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