TWI470839B - 轉換媒體、光電半導體晶片,及光電半導體晶片之製造方法 - Google Patents
轉換媒體、光電半導體晶片,及光電半導體晶片之製造方法 Download PDFInfo
- Publication number
- TWI470839B TWI470839B TW99129814A TW99129814A TWI470839B TW I470839 B TWI470839 B TW I470839B TW 99129814 A TW99129814 A TW 99129814A TW 99129814 A TW99129814 A TW 99129814A TW I470839 B TWI470839 B TW I470839B
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- Prior art keywords
- conversion medium
- hardness
- semiconductor layer
- layer sequence
- conversion
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009040148A DE102009040148A1 (de) | 2009-09-04 | 2009-09-04 | Konversionsmittelkörper, optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201117432A TW201117432A (en) | 2011-05-16 |
| TWI470839B true TWI470839B (zh) | 2015-01-21 |
Family
ID=42983504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW99129814A TWI470839B (zh) | 2009-09-04 | 2010-09-03 | 轉換媒體、光電半導體晶片,及光電半導體晶片之製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9055655B2 (enExample) |
| EP (1) | EP2474203B1 (enExample) |
| JP (1) | JP2013504188A (enExample) |
| KR (1) | KR20120062725A (enExample) |
| CN (1) | CN102498751B (enExample) |
| DE (1) | DE102009040148A1 (enExample) |
| TW (1) | TWI470839B (enExample) |
| WO (1) | WO2011026716A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110284866A1 (en) * | 2005-01-11 | 2011-11-24 | Tran Chuong A | Light-emitting diode (led) structure having a wavelength-converting layer and method of producing |
| JP5657012B2 (ja) * | 2010-02-25 | 2015-01-21 | ライタイザー コリア カンパニー リミテッド | 発光ダイオード及びその製造方法 |
| DE102010049312B4 (de) | 2010-10-22 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Konversionsplättchens und Konversionsplättchen |
| EP2980836A1 (en) * | 2013-03-28 | 2016-02-03 | Nitto Denko Corporation | Method for manufacturing optical semiconductor device, system, manufacturing conditions determination device, and manufacturing management device |
| DE102014107473A1 (de) * | 2014-05-27 | 2015-12-03 | Osram Opto Semiconductors Gmbh | Konverterelement zur Konvertierung einer Wellenlänge, optoelektronisches Bauelement mit Konverterelement und Verfahren zum Herstellen eines Konverterelements |
| US10497838B2 (en) * | 2018-04-12 | 2019-12-03 | Osram Opto Semiconductors Gmbh | Method for producing an optic device, optic device and assembly comprising such an optic device |
| DE102021124691A1 (de) | 2021-09-23 | 2023-03-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung von optischen elementen, verfahren zur herstellung von strahlungsemittierenden halbleiterbauteilen, optisches element und strahlungsemittierendes halbleiterbauteil |
| DE102022122981A1 (de) * | 2022-09-09 | 2024-03-14 | Ams-Osram International Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
| DE102023108532A1 (de) * | 2023-04-03 | 2024-10-10 | Ams-Osram International Gmbh | Verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1510565B1 (en) * | 2003-08-29 | 2006-11-15 | Matsushita Electric Industrial Co., Ltd. | Plasma display device |
| CN101333422A (zh) * | 2008-07-11 | 2008-12-31 | 包书林 | Led芯片粘结胶 |
| EP2043165A1 (en) * | 2006-06-27 | 2009-04-01 | Mitsubishi Chemical Corporation | Illuminating device |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4193446B2 (ja) * | 2001-08-22 | 2008-12-10 | 日亜化学工業株式会社 | 発光装置 |
| US20050211991A1 (en) * | 2004-03-26 | 2005-09-29 | Kyocera Corporation | Light-emitting apparatus and illuminating apparatus |
| US7858408B2 (en) * | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
| JP2007019096A (ja) | 2005-07-05 | 2007-01-25 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
| JP4969088B2 (ja) | 2005-11-28 | 2012-07-04 | 京セラ株式会社 | 蛍光体及び波長変換器並びに発光装置 |
| KR100746749B1 (ko) | 2006-03-15 | 2007-08-09 | (주)케이디티 | 광 여기 시트 |
| CN102437152A (zh) | 2006-04-24 | 2012-05-02 | 克利公司 | 侧视表面安装式白光led |
| CN1976069A (zh) | 2006-12-05 | 2007-06-06 | 上海纳晶科技有限公司 | 隔热式封装结构的白光led的制造方法 |
| JP4927019B2 (ja) * | 2007-04-10 | 2012-05-09 | 信越化学工業株式会社 | 蛍光体含有接着性シリコーン組成物、該組成物からなる組成物シート、及び該シートを使用する発光装置の製造方法 |
| JP5080881B2 (ja) * | 2007-06-27 | 2012-11-21 | ナミックス株式会社 | 発光ダイオードチップの封止体の製造方法 |
| DE102007054800B4 (de) * | 2007-09-28 | 2024-12-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Lumineszenzdiodenchip mit Lumineszenzkonversionsvorrichtung und Verfahren zum Herstellen von Lumineszenzdiodenchips mit Lumineszenzkonversionsvorrichtung |
| RU2489774C2 (ru) * | 2007-11-29 | 2013-08-10 | Нития Корпорейшн | Светоизлучающее устройство и способ его изготовления |
| JP5078644B2 (ja) | 2008-02-06 | 2012-11-21 | 日東電工株式会社 | 光半導体素子封止用樹脂シートおよび光半導体装置 |
| JP5341915B2 (ja) | 2008-03-28 | 2013-11-13 | パナソニック株式会社 | 樹脂成型品、半導体発光光源、照明装置及び樹脂成型品の製造方法 |
-
2009
- 2009-09-04 DE DE102009040148A patent/DE102009040148A1/de not_active Withdrawn
-
2010
- 2010-08-10 EP EP10740673.8A patent/EP2474203B1/de not_active Not-in-force
- 2010-08-10 JP JP2012527269A patent/JP2013504188A/ja active Pending
- 2010-08-10 CN CN201080030130.XA patent/CN102498751B/zh not_active Expired - Fee Related
- 2010-08-10 US US13/377,593 patent/US9055655B2/en not_active Expired - Fee Related
- 2010-08-10 WO PCT/EP2010/061648 patent/WO2011026716A1/de not_active Ceased
- 2010-08-10 KR KR20127004528A patent/KR20120062725A/ko not_active Ceased
- 2010-09-03 TW TW99129814A patent/TWI470839B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1510565B1 (en) * | 2003-08-29 | 2006-11-15 | Matsushita Electric Industrial Co., Ltd. | Plasma display device |
| EP2043165A1 (en) * | 2006-06-27 | 2009-04-01 | Mitsubishi Chemical Corporation | Illuminating device |
| CN101333422A (zh) * | 2008-07-11 | 2008-12-31 | 包书林 | Led芯片粘结胶 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9055655B2 (en) | 2015-06-09 |
| EP2474203B1 (de) | 2017-08-02 |
| CN102498751A (zh) | 2012-06-13 |
| KR20120062725A (ko) | 2012-06-14 |
| DE102009040148A1 (de) | 2011-03-10 |
| JP2013504188A (ja) | 2013-02-04 |
| EP2474203A1 (de) | 2012-07-11 |
| WO2011026716A1 (de) | 2011-03-10 |
| TW201117432A (en) | 2011-05-16 |
| US20120146076A1 (en) | 2012-06-14 |
| CN102498751B (zh) | 2016-05-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |