TWI470839B - 轉換媒體、光電半導體晶片,及光電半導體晶片之製造方法 - Google Patents

轉換媒體、光電半導體晶片,及光電半導體晶片之製造方法 Download PDF

Info

Publication number
TWI470839B
TWI470839B TW99129814A TW99129814A TWI470839B TW I470839 B TWI470839 B TW I470839B TW 99129814 A TW99129814 A TW 99129814A TW 99129814 A TW99129814 A TW 99129814A TW I470839 B TWI470839 B TW I470839B
Authority
TW
Taiwan
Prior art keywords
conversion medium
hardness
semiconductor layer
layer sequence
conversion
Prior art date
Application number
TW99129814A
Other languages
English (en)
Chinese (zh)
Other versions
TW201117432A (en
Inventor
貝爾特 柏拉尼
Original Assignee
歐司朗光電半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 歐司朗光電半導體公司 filed Critical 歐司朗光電半導體公司
Publication of TW201117432A publication Critical patent/TW201117432A/zh
Application granted granted Critical
Publication of TWI470839B publication Critical patent/TWI470839B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145Arrangements of the electroluminescent material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8516Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12043Photo diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31663As siloxane, silicone or silane

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
TW99129814A 2009-09-04 2010-09-03 轉換媒體、光電半導體晶片,及光電半導體晶片之製造方法 TWI470839B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009040148A DE102009040148A1 (de) 2009-09-04 2009-09-04 Konversionsmittelkörper, optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

Publications (2)

Publication Number Publication Date
TW201117432A TW201117432A (en) 2011-05-16
TWI470839B true TWI470839B (zh) 2015-01-21

Family

ID=42983504

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99129814A TWI470839B (zh) 2009-09-04 2010-09-03 轉換媒體、光電半導體晶片,及光電半導體晶片之製造方法

Country Status (8)

Country Link
US (1) US9055655B2 (enExample)
EP (1) EP2474203B1 (enExample)
JP (1) JP2013504188A (enExample)
KR (1) KR20120062725A (enExample)
CN (1) CN102498751B (enExample)
DE (1) DE102009040148A1 (enExample)
TW (1) TWI470839B (enExample)
WO (1) WO2011026716A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110284866A1 (en) * 2005-01-11 2011-11-24 Tran Chuong A Light-emitting diode (led) structure having a wavelength-converting layer and method of producing
JP5657012B2 (ja) * 2010-02-25 2015-01-21 ライタイザー コリア カンパニー リミテッド 発光ダイオード及びその製造方法
DE102010049312B4 (de) 2010-10-22 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Konversionsplättchens und Konversionsplättchen
EP2980836A1 (en) * 2013-03-28 2016-02-03 Nitto Denko Corporation Method for manufacturing optical semiconductor device, system, manufacturing conditions determination device, and manufacturing management device
DE102014107473A1 (de) * 2014-05-27 2015-12-03 Osram Opto Semiconductors Gmbh Konverterelement zur Konvertierung einer Wellenlänge, optoelektronisches Bauelement mit Konverterelement und Verfahren zum Herstellen eines Konverterelements
US10497838B2 (en) * 2018-04-12 2019-12-03 Osram Opto Semiconductors Gmbh Method for producing an optic device, optic device and assembly comprising such an optic device
DE102021124691A1 (de) 2021-09-23 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optischen elementen, verfahren zur herstellung von strahlungsemittierenden halbleiterbauteilen, optisches element und strahlungsemittierendes halbleiterbauteil
DE102022122981A1 (de) * 2022-09-09 2024-03-14 Ams-Osram International Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102023108532A1 (de) * 2023-04-03 2024-10-10 Ams-Osram International Gmbh Verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1510565B1 (en) * 2003-08-29 2006-11-15 Matsushita Electric Industrial Co., Ltd. Plasma display device
CN101333422A (zh) * 2008-07-11 2008-12-31 包书林 Led芯片粘结胶
EP2043165A1 (en) * 2006-06-27 2009-04-01 Mitsubishi Chemical Corporation Illuminating device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4193446B2 (ja) * 2001-08-22 2008-12-10 日亜化学工業株式会社 発光装置
US20050211991A1 (en) * 2004-03-26 2005-09-29 Kyocera Corporation Light-emitting apparatus and illuminating apparatus
US7858408B2 (en) * 2004-11-15 2010-12-28 Koninklijke Philips Electronics N.V. LED with phosphor tile and overmolded phosphor in lens
JP2007019096A (ja) 2005-07-05 2007-01-25 Toyoda Gosei Co Ltd 発光装置及びその製造方法
JP4969088B2 (ja) 2005-11-28 2012-07-04 京セラ株式会社 蛍光体及び波長変換器並びに発光装置
KR100746749B1 (ko) 2006-03-15 2007-08-09 (주)케이디티 광 여기 시트
CN102437152A (zh) 2006-04-24 2012-05-02 克利公司 侧视表面安装式白光led
CN1976069A (zh) 2006-12-05 2007-06-06 上海纳晶科技有限公司 隔热式封装结构的白光led的制造方法
JP4927019B2 (ja) * 2007-04-10 2012-05-09 信越化学工業株式会社 蛍光体含有接着性シリコーン組成物、該組成物からなる組成物シート、及び該シートを使用する発光装置の製造方法
JP5080881B2 (ja) * 2007-06-27 2012-11-21 ナミックス株式会社 発光ダイオードチップの封止体の製造方法
DE102007054800B4 (de) * 2007-09-28 2024-12-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lumineszenzdiodenchip mit Lumineszenzkonversionsvorrichtung und Verfahren zum Herstellen von Lumineszenzdiodenchips mit Lumineszenzkonversionsvorrichtung
RU2489774C2 (ru) * 2007-11-29 2013-08-10 Нития Корпорейшн Светоизлучающее устройство и способ его изготовления
JP5078644B2 (ja) 2008-02-06 2012-11-21 日東電工株式会社 光半導体素子封止用樹脂シートおよび光半導体装置
JP5341915B2 (ja) 2008-03-28 2013-11-13 パナソニック株式会社 樹脂成型品、半導体発光光源、照明装置及び樹脂成型品の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1510565B1 (en) * 2003-08-29 2006-11-15 Matsushita Electric Industrial Co., Ltd. Plasma display device
EP2043165A1 (en) * 2006-06-27 2009-04-01 Mitsubishi Chemical Corporation Illuminating device
CN101333422A (zh) * 2008-07-11 2008-12-31 包书林 Led芯片粘结胶

Also Published As

Publication number Publication date
US9055655B2 (en) 2015-06-09
EP2474203B1 (de) 2017-08-02
CN102498751A (zh) 2012-06-13
KR20120062725A (ko) 2012-06-14
DE102009040148A1 (de) 2011-03-10
JP2013504188A (ja) 2013-02-04
EP2474203A1 (de) 2012-07-11
WO2011026716A1 (de) 2011-03-10
TW201117432A (en) 2011-05-16
US20120146076A1 (en) 2012-06-14
CN102498751B (zh) 2016-05-18

Similar Documents

Publication Publication Date Title
TWI470839B (zh) 轉換媒體、光電半導體晶片,及光電半導體晶片之製造方法
US9362465B2 (en) Method of manufacturing light emitting device
US10205067B2 (en) LED with ceramic green phosphor and protected red phosphor layer
US9337405B2 (en) Light emitting device and method for manufacturing the same
TWI528602B (zh) 具有遠端磷光層及反射子基板的發光二極體
CN104752572B (zh) 制备用于安装的半导体结构的工艺以及安装的光电子半导体结构
JP2010232577A (ja) 半導体装置およびその製造方法
WO2012023119A1 (en) Lamination process for leds
JP2009503878A (ja) 半導体構成素子を製作するための方法及び薄膜半導体構成素子
US20180033925A1 (en) Method of producing a light-emitting device, and light-emitting device
JP6447018B2 (ja) 発光装置及び発光装置の製造方法
WO2017221606A1 (ja) 蛍光体層付光半導体素子およびその製造方法
CN111213249A (zh) 半导体器件的生产
JP5896214B2 (ja) 半導体装置の製造方法
JP5882910B2 (ja) パッケージおよびその製造方法
JP6760356B2 (ja) 発光装置及び発光装置の製造方法
US10680147B2 (en) Method of producing a lighting device
US11398587B2 (en) Method of manufacturing light-transmissive sheet
JP2014049642A5 (enExample)
JP2014049642A (ja) 発光装置およびその製造方法
JP2018120947A (ja) 機能層−被覆層付光半導体素子の製造方法
JP2018120944A (ja) 機能層−被覆層付光半導体素子の製造方法
KR102051478B1 (ko) 반도체 발광소자 및 이의 제조방법
JP2023067723A (ja) 発光装置の製造方法
JP2025168969A (ja) 半導体発光装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees