CN102498751B - 转换剂体、光电子半导体芯片和用于制造光电子半导体芯片的方法 - Google Patents

转换剂体、光电子半导体芯片和用于制造光电子半导体芯片的方法 Download PDF

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Publication number
CN102498751B
CN102498751B CN201080030130.XA CN201080030130A CN102498751B CN 102498751 B CN102498751 B CN 102498751B CN 201080030130 A CN201080030130 A CN 201080030130A CN 102498751 B CN102498751 B CN 102498751B
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conversion agent
agent body
layer sequence
semiconductor layer
semiconductor chip
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Expired - Fee Related
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CN201080030130.XA
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Chinese (zh)
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CN102498751A (zh
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贝尔特·布劳内
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
CN201080030130.XA 2009-09-04 2010-08-10 转换剂体、光电子半导体芯片和用于制造光电子半导体芯片的方法 Expired - Fee Related CN102498751B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009040148A DE102009040148A1 (de) 2009-09-04 2009-09-04 Konversionsmittelkörper, optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102009040148.2 2009-09-04
PCT/EP2010/061648 WO2011026716A1 (de) 2009-09-04 2010-08-10 Konversionsmittelkörper, optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips

Publications (2)

Publication Number Publication Date
CN102498751A CN102498751A (zh) 2012-06-13
CN102498751B true CN102498751B (zh) 2016-05-18

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Family Applications (1)

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CN201080030130.XA Expired - Fee Related CN102498751B (zh) 2009-09-04 2010-08-10 转换剂体、光电子半导体芯片和用于制造光电子半导体芯片的方法

Country Status (8)

Country Link
US (1) US9055655B2 (enExample)
EP (1) EP2474203B1 (enExample)
JP (1) JP2013504188A (enExample)
KR (1) KR20120062725A (enExample)
CN (1) CN102498751B (enExample)
DE (1) DE102009040148A1 (enExample)
TW (1) TWI470839B (enExample)
WO (1) WO2011026716A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110284866A1 (en) * 2005-01-11 2011-11-24 Tran Chuong A Light-emitting diode (led) structure having a wavelength-converting layer and method of producing
JP5657012B2 (ja) * 2010-02-25 2015-01-21 ライタイザー コリア カンパニー リミテッド 発光ダイオード及びその製造方法
DE102010049312B4 (de) 2010-10-22 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Konversionsplättchens und Konversionsplättchen
EP2980836A1 (en) * 2013-03-28 2016-02-03 Nitto Denko Corporation Method for manufacturing optical semiconductor device, system, manufacturing conditions determination device, and manufacturing management device
DE102014107473A1 (de) * 2014-05-27 2015-12-03 Osram Opto Semiconductors Gmbh Konverterelement zur Konvertierung einer Wellenlänge, optoelektronisches Bauelement mit Konverterelement und Verfahren zum Herstellen eines Konverterelements
US10497838B2 (en) * 2018-04-12 2019-12-03 Osram Opto Semiconductors Gmbh Method for producing an optic device, optic device and assembly comprising such an optic device
DE102021124691A1 (de) 2021-09-23 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optischen elementen, verfahren zur herstellung von strahlungsemittierenden halbleiterbauteilen, optisches element und strahlungsemittierendes halbleiterbauteil
DE102022122981A1 (de) * 2022-09-09 2024-03-14 Ams-Osram International Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102023108532A1 (de) * 2023-04-03 2024-10-10 Ams-Osram International Gmbh Verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement

Citations (4)

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CN1976069A (zh) * 2006-12-05 2007-06-06 上海纳晶科技有限公司 隔热式封装结构的白光led的制造方法
WO2007127029A2 (en) * 2006-04-24 2007-11-08 Cree, Inc. Side-view surface mount white led
US20080048200A1 (en) * 2004-11-15 2008-02-28 Philips Lumileds Lighting Company, Llc LED with Phosphor Tile and Overmolded Phosphor in Lens
EP2043165A1 (en) * 2006-06-27 2009-04-01 Mitsubishi Chemical Corporation Illuminating device

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JP4193446B2 (ja) * 2001-08-22 2008-12-10 日亜化学工業株式会社 発光装置
US7285913B2 (en) 2003-08-29 2007-10-23 Matsushita Electric Industrial Co., Ltd. Plasma display device having blue phosphor layers with alkaline earth metal aluminate containing molybdenum or tungsten
US20050211991A1 (en) * 2004-03-26 2005-09-29 Kyocera Corporation Light-emitting apparatus and illuminating apparatus
JP2007019096A (ja) 2005-07-05 2007-01-25 Toyoda Gosei Co Ltd 発光装置及びその製造方法
JP4969088B2 (ja) 2005-11-28 2012-07-04 京セラ株式会社 蛍光体及び波長変換器並びに発光装置
KR100746749B1 (ko) 2006-03-15 2007-08-09 (주)케이디티 광 여기 시트
JP4927019B2 (ja) * 2007-04-10 2012-05-09 信越化学工業株式会社 蛍光体含有接着性シリコーン組成物、該組成物からなる組成物シート、及び該シートを使用する発光装置の製造方法
JP5080881B2 (ja) * 2007-06-27 2012-11-21 ナミックス株式会社 発光ダイオードチップの封止体の製造方法
DE102007054800B4 (de) * 2007-09-28 2024-12-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lumineszenzdiodenchip mit Lumineszenzkonversionsvorrichtung und Verfahren zum Herstellen von Lumineszenzdiodenchips mit Lumineszenzkonversionsvorrichtung
RU2489774C2 (ru) * 2007-11-29 2013-08-10 Нития Корпорейшн Светоизлучающее устройство и способ его изготовления
JP5078644B2 (ja) 2008-02-06 2012-11-21 日東電工株式会社 光半導体素子封止用樹脂シートおよび光半導体装置
JP5341915B2 (ja) 2008-03-28 2013-11-13 パナソニック株式会社 樹脂成型品、半導体発光光源、照明装置及び樹脂成型品の製造方法
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Publication number Priority date Publication date Assignee Title
US20080048200A1 (en) * 2004-11-15 2008-02-28 Philips Lumileds Lighting Company, Llc LED with Phosphor Tile and Overmolded Phosphor in Lens
WO2007127029A2 (en) * 2006-04-24 2007-11-08 Cree, Inc. Side-view surface mount white led
EP2043165A1 (en) * 2006-06-27 2009-04-01 Mitsubishi Chemical Corporation Illuminating device
CN1976069A (zh) * 2006-12-05 2007-06-06 上海纳晶科技有限公司 隔热式封装结构的白光led的制造方法

Also Published As

Publication number Publication date
TWI470839B (zh) 2015-01-21
US9055655B2 (en) 2015-06-09
EP2474203B1 (de) 2017-08-02
CN102498751A (zh) 2012-06-13
KR20120062725A (ko) 2012-06-14
DE102009040148A1 (de) 2011-03-10
JP2013504188A (ja) 2013-02-04
EP2474203A1 (de) 2012-07-11
WO2011026716A1 (de) 2011-03-10
TW201117432A (en) 2011-05-16
US20120146076A1 (en) 2012-06-14

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Granted publication date: 20160518