TWI470047B - 用於選擇性拋光氮化矽材料之組合物及方法 - Google Patents

用於選擇性拋光氮化矽材料之組合物及方法 Download PDF

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Publication number
TWI470047B
TWI470047B TW101113210A TW101113210A TWI470047B TW I470047 B TWI470047 B TW I470047B TW 101113210 A TW101113210 A TW 101113210A TW 101113210 A TW101113210 A TW 101113210A TW I470047 B TWI470047 B TW I470047B
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TW
Taiwan
Prior art keywords
polymer
composition
poly
vinylpyridine
ppm
Prior art date
Application number
TW101113210A
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English (en)
Chinese (zh)
Other versions
TW201245363A (en
Inventor
William Ward
Original Assignee
Cabot Microelectronics Corp
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Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of TW201245363A publication Critical patent/TW201245363A/zh
Application granted granted Critical
Publication of TWI470047B publication Critical patent/TWI470047B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW101113210A 2011-04-15 2012-04-13 用於選擇性拋光氮化矽材料之組合物及方法 TWI470047B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/087,857 US8808573B2 (en) 2011-04-15 2011-04-15 Compositions and methods for selective polishing of silicon nitride materials

Publications (2)

Publication Number Publication Date
TW201245363A TW201245363A (en) 2012-11-16
TWI470047B true TWI470047B (zh) 2015-01-21

Family

ID=47006699

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101113210A TWI470047B (zh) 2011-04-15 2012-04-13 用於選擇性拋光氮化矽材料之組合物及方法

Country Status (8)

Country Link
US (1) US8808573B2 (enExample)
EP (1) EP2697330B1 (enExample)
JP (1) JP5792889B2 (enExample)
KR (1) KR101549766B1 (enExample)
CN (1) CN103492519B (enExample)
SG (1) SG193528A1 (enExample)
TW (1) TWI470047B (enExample)
WO (1) WO2012142374A2 (enExample)

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CN102956450B (zh) * 2011-08-16 2015-03-11 中芯国际集成电路制造(北京)有限公司 一种制作半导体器件的方法
US8859428B2 (en) 2012-10-19 2014-10-14 Air Products And Chemicals, Inc. Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US9850402B2 (en) * 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
EP3126093B1 (en) * 2014-04-03 2022-08-17 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
JP6533439B2 (ja) * 2015-09-15 2019-06-19 株式会社フジミインコーポレーテッド 研磨用組成物
KR101715931B1 (ko) * 2015-12-11 2017-03-14 주식회사 케이씨텍 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
KR20170076191A (ko) * 2015-12-24 2017-07-04 주식회사 케이씨텍 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
JP2017132944A (ja) * 2016-01-29 2017-08-03 株式会社フジミインコーポレーテッド 濃縮研磨用組成物の製造方法および安定化方法
CN109906257B (zh) * 2016-10-17 2021-11-09 Cmc材料股份有限公司 具有改善的凹陷及图案选择性的对氧化物及氮化物有选择性的化学机械抛光组合物
KR102758095B1 (ko) * 2016-12-14 2025-01-22 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조방법
KR102704751B1 (ko) * 2016-12-14 2024-09-10 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 반도체 소자의 제조방법
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10428241B2 (en) 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US10626298B1 (en) 2019-03-20 2020-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods for suppressing the removal rate of amorphous silicon
KR20220087492A (ko) 2019-10-22 2022-06-24 씨엠씨 머티리얼즈, 인코포레이티드 실리콘 산화물보다 실리콘 질화물 및 폴리실리콘에 대해 높은 선택성을 갖는 연마 조성물 및 방법
TWI826878B (zh) * 2020-12-21 2023-12-21 美商Ｃｍｃ材料有限責任公司 用於高拓樸選擇性的自停止性拋光組合物與方法
US20240247090A1 (en) 2021-05-20 2024-07-25 Versum Materials Us, Llc Imidazolium-based poly(ionic liquid)s and use therefore

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060108326A1 (en) * 2004-11-05 2006-05-25 Cabot Microelectronics Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20090047870A1 (en) * 2007-08-16 2009-02-19 Dupont Air Products Nanomaterials Llc Reverse Shallow Trench Isolation Process
US20090137124A1 (en) * 2004-11-05 2009-05-28 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20090253355A1 (en) * 1999-06-18 2009-10-08 Naoyuki Koyama Cmp abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for cmp abrasive
US20100081281A1 (en) * 2008-09-26 2010-04-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same

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JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
US20070218811A1 (en) * 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
US20080254717A1 (en) * 2004-09-28 2008-10-16 Hitachi Chemical Co., Ltd. Cmp Polishing Slurry and Method of Polishing Substrate
US7297633B1 (en) * 2006-06-05 2007-11-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection
WO2007146680A1 (en) * 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
JP5519507B2 (ja) * 2007-09-21 2014-06-11 キャボット マイクロエレクトロニクス コーポレイション アミノシランを用いて処理した研磨剤粒子を利用する研磨組成物および研磨方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090253355A1 (en) * 1999-06-18 2009-10-08 Naoyuki Koyama Cmp abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for cmp abrasive
US20060108326A1 (en) * 2004-11-05 2006-05-25 Cabot Microelectronics Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20090137124A1 (en) * 2004-11-05 2009-05-28 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20090047870A1 (en) * 2007-08-16 2009-02-19 Dupont Air Products Nanomaterials Llc Reverse Shallow Trench Isolation Process
US20100081281A1 (en) * 2008-09-26 2010-04-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same

Also Published As

Publication number Publication date
CN103492519A (zh) 2014-01-01
EP2697330A4 (en) 2014-09-24
US8808573B2 (en) 2014-08-19
SG193528A1 (en) 2013-10-30
KR20140027276A (ko) 2014-03-06
KR101549766B1 (ko) 2015-09-02
CN103492519B (zh) 2015-11-25
EP2697330B1 (en) 2015-10-14
WO2012142374A3 (en) 2013-03-14
TW201245363A (en) 2012-11-16
WO2012142374A2 (en) 2012-10-18
JP5792889B2 (ja) 2015-10-14
JP2014515777A (ja) 2014-07-03
US20120264304A1 (en) 2012-10-18
EP2697330A2 (en) 2014-02-19

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