JP5792889B2 - 窒化ケイ素材料の選択的研磨のための組成物および方法 - Google Patents

窒化ケイ素材料の選択的研磨のための組成物および方法 Download PDF

Info

Publication number
JP5792889B2
JP5792889B2 JP2014505325A JP2014505325A JP5792889B2 JP 5792889 B2 JP5792889 B2 JP 5792889B2 JP 2014505325 A JP2014505325 A JP 2014505325A JP 2014505325 A JP2014505325 A JP 2014505325A JP 5792889 B2 JP5792889 B2 JP 5792889B2
Authority
JP
Japan
Prior art keywords
polymer
poly
composition
polishing
vinylpyridine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014505325A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014515777A5 (enExample
JP2014515777A (ja
Inventor
ワード ウィリアム
ワード ウィリアム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2014515777A publication Critical patent/JP2014515777A/ja
Publication of JP2014515777A5 publication Critical patent/JP2014515777A5/ja
Application granted granted Critical
Publication of JP5792889B2 publication Critical patent/JP5792889B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2014505325A 2011-04-15 2012-04-13 窒化ケイ素材料の選択的研磨のための組成物および方法 Active JP5792889B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/087,857 2011-04-15
US13/087,857 US8808573B2 (en) 2011-04-15 2011-04-15 Compositions and methods for selective polishing of silicon nitride materials
PCT/US2012/033463 WO2012142374A2 (en) 2011-04-15 2012-04-13 Compositions and methods for selective polishing of silicon nitride materials

Publications (3)

Publication Number Publication Date
JP2014515777A JP2014515777A (ja) 2014-07-03
JP2014515777A5 JP2014515777A5 (enExample) 2015-07-02
JP5792889B2 true JP5792889B2 (ja) 2015-10-14

Family

ID=47006699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014505325A Active JP5792889B2 (ja) 2011-04-15 2012-04-13 窒化ケイ素材料の選択的研磨のための組成物および方法

Country Status (8)

Country Link
US (1) US8808573B2 (enExample)
EP (1) EP2697330B1 (enExample)
JP (1) JP5792889B2 (enExample)
KR (1) KR101549766B1 (enExample)
CN (1) CN103492519B (enExample)
SG (1) SG193528A1 (enExample)
TW (1) TWI470047B (enExample)
WO (1) WO2012142374A2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102956450B (zh) * 2011-08-16 2015-03-11 中芯国际集成电路制造(北京)有限公司 一种制作半导体器件的方法
US8859428B2 (en) 2012-10-19 2014-10-14 Air Products And Chemicals, Inc. Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US9850402B2 (en) * 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
WO2015153597A1 (en) * 2014-04-03 2015-10-08 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
JP6533439B2 (ja) * 2015-09-15 2019-06-19 株式会社フジミインコーポレーテッド 研磨用組成物
KR101715931B1 (ko) * 2015-12-11 2017-03-14 주식회사 케이씨텍 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
KR20170076191A (ko) * 2015-12-24 2017-07-04 주식회사 케이씨텍 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
JP2017132944A (ja) * 2016-01-29 2017-08-03 株式会社フジミインコーポレーテッド 濃縮研磨用組成物の製造方法および安定化方法
WO2018075409A2 (en) * 2016-10-17 2018-04-26 Cabot Microelectronics Corporation Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity
KR102758095B1 (ko) * 2016-12-14 2025-01-22 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조방법
KR102704751B1 (ko) * 2016-12-14 2024-09-10 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 반도체 소자의 제조방법
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10428241B2 (en) 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US10626298B1 (en) 2019-03-20 2020-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods for suppressing the removal rate of amorphous silicon
JP2022553347A (ja) 2019-10-22 2022-12-22 シーエムシー マテリアルズ，インコーポレイティド 酸化ケイ素に比べて窒化ケイ素およびポリシリコンについて高い選択性を有する研磨組成物および方法
CN117120563B (zh) * 2020-12-21 2026-03-27 Cmc材料有限责任公司 用于高形貌选择性的自停止性抛光组合物与方法
WO2022246381A1 (en) 2021-05-20 2022-11-24 Versum Materials Us, Llc Imidazolium-based poly(ionic liquid)s and use therefore

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1205965B1 (en) * 1999-06-18 2006-11-15 Hitachi Chemical Company, Ltd. Use of cmp abrasive
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
US20070218811A1 (en) * 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
CN101032001B (zh) * 2004-09-28 2011-12-28 日立化成工业株式会社 Cmp抛光剂以及衬底的抛光方法
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7297633B1 (en) * 2006-06-05 2007-11-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection
WO2007146680A1 (en) * 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
US20090047870A1 (en) * 2007-08-16 2009-02-19 Dupont Air Products Nanomaterials Llc Reverse Shallow Trench Isolation Process
US7994057B2 (en) * 2007-09-21 2011-08-09 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP5632378B2 (ja) * 2008-09-26 2014-11-26 ロディア オペレーションズＲｈｏｄｉａ Ｏｐｅｒａｔｉｏｎｓ 化学機械研磨用研磨剤組成物及びその使用法

Also Published As

Publication number Publication date
WO2012142374A2 (en) 2012-10-18
US8808573B2 (en) 2014-08-19
TW201245363A (en) 2012-11-16
SG193528A1 (en) 2013-10-30
JP2014515777A (ja) 2014-07-03
US20120264304A1 (en) 2012-10-18
KR101549766B1 (ko) 2015-09-02
KR20140027276A (ko) 2014-03-06
EP2697330B1 (en) 2015-10-14
TWI470047B (zh) 2015-01-21
CN103492519B (zh) 2015-11-25
CN103492519A (zh) 2014-01-01
EP2697330A2 (en) 2014-02-19
EP2697330A4 (en) 2014-09-24
WO2012142374A3 (en) 2013-03-14

Similar Documents

Publication Publication Date Title
EP2697330B1 (en) Compositions and methods for selective polishing of silicon nitride materials
JP6189952B2 (ja) 窒化ケイ素材料の選択的な研磨のための組成物および方法
EP2035523B1 (en) Compositions and methods for polishing silicon nitride materials
JP5827221B2 (ja) ポリシリコン除去速度の抑制のためのｃｍｐ組成物および方法
KR101395542B1 (ko) 반도체 물질의 ｃｍｐ를 위한 조성물 및 방법
EP3025368B1 (en) Compositions and methods for cmp of silicon oxide, silicon nitride, and polysilicon materials

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141126

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141126

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20141126

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20150209

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150217

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20150515

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150707

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150806

R150 Certificate of patent or registration of utility model

Ref document number: 5792889

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250