TWI469190B - 具有覆蓋層的離子佈植基材及方法 - Google Patents

具有覆蓋層的離子佈植基材及方法 Download PDF

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Publication number
TWI469190B
TWI469190B TW98146476A TW98146476A TWI469190B TW I469190 B TWI469190 B TW I469190B TW 98146476 A TW98146476 A TW 98146476A TW 98146476 A TW98146476 A TW 98146476A TW I469190 B TWI469190 B TW I469190B
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TW
Taiwan
Prior art keywords
substrate
cover layer
ion implantation
plasma
gas
Prior art date
Application number
TW98146476A
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English (en)
Chinese (zh)
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TW201034059A (en
Inventor
戴爾阿古亞伯尼奎爾傑西依葛那西歐
普恩茲
許瑞特爾坎波羅伯特
福德馬吉德
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應用材料股份有限公司
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Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201034059A publication Critical patent/TW201034059A/zh
Application granted granted Critical
Publication of TWI469190B publication Critical patent/TWI469190B/zh

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    • H10P30/20—
    • H10P32/1204—
    • H10P95/90—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10W20/072—
    • H10W20/074—
    • H10W20/46—

Landscapes

  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
TW98146476A 2009-02-06 2009-12-31 具有覆蓋層的離子佈植基材及方法 TWI469190B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/367,306 US7858503B2 (en) 2009-02-06 2009-02-06 Ion implanted substrate having capping layer and method

Publications (2)

Publication Number Publication Date
TW201034059A TW201034059A (en) 2010-09-16
TWI469190B true TWI469190B (zh) 2015-01-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW98146476A TWI469190B (zh) 2009-02-06 2009-12-31 具有覆蓋層的離子佈植基材及方法

Country Status (7)

Country Link
US (2) US7858503B2 (OSRAM)
EP (1) EP2394293A4 (OSRAM)
JP (1) JP2012517698A (OSRAM)
KR (1) KR20110122700A (OSRAM)
CN (1) CN102308371A (OSRAM)
TW (1) TWI469190B (OSRAM)
WO (1) WO2010090693A2 (OSRAM)

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Also Published As

Publication number Publication date
WO2010090693A3 (en) 2010-10-14
WO2010090693A2 (en) 2010-08-12
US8198180B2 (en) 2012-06-12
US20100200954A1 (en) 2010-08-12
EP2394293A2 (en) 2011-12-14
US7858503B2 (en) 2010-12-28
CN102308371A (zh) 2012-01-04
TW201034059A (en) 2010-09-16
EP2394293A4 (en) 2012-12-12
KR20110122700A (ko) 2011-11-10
US20110092058A1 (en) 2011-04-21
JP2012517698A (ja) 2012-08-02

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