TWI468853B - 光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法 - Google Patents
光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法 Download PDFInfo
- Publication number
- TWI468853B TWI468853B TW101145872A TW101145872A TWI468853B TW I468853 B TWI468853 B TW I468853B TW 101145872 A TW101145872 A TW 101145872A TW 101145872 A TW101145872 A TW 101145872A TW I468853 B TWI468853 B TW I468853B
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- Prior art keywords
- film
- light
- pattern
- semi
- photomask
- Prior art date
Links
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- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 64
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 34
- 238000000059 patterning Methods 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 24
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- 150000004767 nitrides Chemical class 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 101000863856 Homo sapiens Shiftless antiviral inhibitor of ribosomal frameshifting protein Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
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- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011285949A JP5605917B2 (ja) | 2011-12-27 | 2011-12-27 | フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201329615A TW201329615A (zh) | 2013-07-16 |
| TWI468853B true TWI468853B (zh) | 2015-01-11 |
Family
ID=48911139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101145872A TWI468853B (zh) | 2011-12-27 | 2012-12-06 | 光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5605917B2 (enrdf_load_stackoverflow) |
| KR (2) | KR101390530B1 (enrdf_load_stackoverflow) |
| TW (1) | TWI468853B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI684062B (zh) * | 2015-03-04 | 2020-02-01 | 日商信越化學工業股份有限公司 | 光罩基板（ｐｈｏｔｏｍａｓｋ ｂｌａｎｋ）、光罩之製造方法及遮罩圖案形成方法 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6089604B2 (ja) * | 2012-11-06 | 2017-03-08 | 大日本印刷株式会社 | 位相シフトマスクの製造方法 |
| JP2015049282A (ja) * | 2013-08-30 | 2015-03-16 | Hoya株式会社 | 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
| JP2015102608A (ja) * | 2013-11-22 | 2015-06-04 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法 |
| JP2015106001A (ja) * | 2013-11-29 | 2015-06-08 | Hoya株式会社 | フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
| JP6391495B2 (ja) * | 2015-02-23 | 2018-09-19 | Hoya株式会社 | フォトマスク、フォトマスクセット、フォトマスクの製造方法、及び表示装置の製造方法 |
| DE112016001162B4 (de) * | 2015-03-12 | 2024-01-11 | Bruker Nano, Inc. | Verfahren zur Verbesserung einer Arbeitskennlinie und optischer Eigenschaften einer Fotomaske |
| JP6456748B2 (ja) * | 2015-03-28 | 2019-01-23 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法 |
| JP2016224289A (ja) * | 2015-06-01 | 2016-12-28 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及び表示装置の製造方法 |
| CN105717737B (zh) | 2016-04-26 | 2019-08-02 | 深圳市华星光电技术有限公司 | 一种掩膜版及彩色滤光片基板的制备方法 |
| JP2017033004A (ja) * | 2016-09-21 | 2017-02-09 | Hoya株式会社 | 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
| JP2017076146A (ja) * | 2016-12-26 | 2017-04-20 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法 |
| JP2017068281A (ja) * | 2016-12-27 | 2017-04-06 | Hoya株式会社 | フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
| JP7080070B2 (ja) * | 2017-03-24 | 2022-06-03 | Hoya株式会社 | フォトマスク、及び表示装置の製造方法 |
| JP6659855B2 (ja) * | 2017-06-28 | 2020-03-04 | アルバック成膜株式会社 | マスクブランクス、位相シフトマスク、ハーフトーンマスク、マスクブランクスの製造方法、及び位相シフトマスクの製造方法 |
| KR102367141B1 (ko) * | 2019-02-27 | 2022-02-23 | 호야 가부시키가이샤 | 포토마스크, 포토마스크의 제조 방법, 및 표시 장치의 제조 방법 |
| JP7214815B2 (ja) * | 2020-04-28 | 2023-01-30 | 株式会社エスケーエレクトロニクス | フォトマスク及びその製造方法 |
| TWI785552B (zh) | 2020-04-28 | 2022-12-01 | 日商Ｓｋ電子股份有限公司 | 光罩的製造方法 |
| JP2024006265A (ja) | 2022-07-01 | 2024-01-17 | 株式会社エスケーエレクトロニクス | フォトマスクの製造方法及びフォトマスク |
| JP7450784B1 (ja) | 2023-04-10 | 2024-03-15 | 株式会社エスケーエレクトロニクス | フォトマスクの製造方法 |
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| JP2001291661A (ja) * | 2000-04-07 | 2001-10-19 | Fujitsu Ltd | 反射型マスク製造方法 |
| US20070082278A1 (en) * | 2002-02-22 | 2007-04-12 | Hoya Corporation | Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same |
| TWI305865B (en) * | 2003-03-31 | 2009-02-01 | Shinetsu Chemical Co | Photomask blank, photomask, and method of manufacture |
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| JP2624351B2 (ja) * | 1990-02-21 | 1997-06-25 | 松下電子工業株式会社 | ホトマスクの製造方法 |
| JPH05134384A (ja) * | 1991-11-08 | 1993-05-28 | Fujitsu Ltd | レチクルの作成方法 |
| JP2501383B2 (ja) * | 1991-12-12 | 1996-05-29 | ホーヤ株式会社 | 位相シフトマスクブランク及び位相シフトマスク |
| JPH07134389A (ja) * | 1993-06-25 | 1995-05-23 | Hoya Corp | 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法 |
| JPH08272071A (ja) * | 1995-03-30 | 1996-10-18 | Toppan Printing Co Ltd | 位相シフトマスクとその製造方法、ならびにマスクブランク |
| JP3209257B2 (ja) * | 1995-04-21 | 2001-09-17 | 凸版印刷株式会社 | 位相シフトマスク及びその製造方法 |
| JP3244107B2 (ja) * | 1995-06-02 | 2002-01-07 | 凸版印刷株式会社 | ハーフトーン型位相シフトマスク及びその製造方法 |
| JPH09325468A (ja) * | 1996-06-06 | 1997-12-16 | Sony Corp | ハーフトーン型位相シフトマスク及びその製造方法 |
| JPH1031300A (ja) * | 1996-07-12 | 1998-02-03 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク及びその製造方法 |
| JP3636838B2 (ja) * | 1996-09-06 | 2005-04-06 | Ｈｏｙａ株式会社 | ハーフトーン型位相シフトマスク及びその製造方法 |
| JPH1124231A (ja) * | 1997-07-01 | 1999-01-29 | Sony Corp | ハーフトーン位相シフトマスク、及びその製造方法 |
| CN1661480A (zh) * | 1999-11-08 | 2005-08-31 | 松下电器产业株式会社 | 一种图案形成方法 |
| JP2001142195A (ja) * | 1999-11-16 | 2001-05-25 | Nec Corp | 近接効果補正マスク |
| JP4009219B2 (ja) * | 2003-04-10 | 2007-11-14 | 松下電器産業株式会社 | フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法 |
| JP2008090245A (ja) * | 2006-09-29 | 2008-04-17 | Shinetsu Sasaki | 新弦 |
| JP5588633B2 (ja) * | 2009-06-30 | 2014-09-10 | アルバック成膜株式会社 | 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク |
| TWI461833B (zh) * | 2010-03-15 | 2014-11-21 | Hoya Corp | 多調式光罩、多調式光罩之製造方法及圖案轉印方法 |
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2011
- 2011-12-27 JP JP2011285949A patent/JP5605917B2/ja active Active
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2012
- 2012-12-06 TW TW101145872A patent/TWI468853B/zh active
- 2012-12-26 KR KR1020120153728A patent/KR101390530B1/ko active Active
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2013
- 2013-08-26 KR KR1020130101053A patent/KR101927549B1/ko active Active
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| JP2001291661A (ja) * | 2000-04-07 | 2001-10-19 | Fujitsu Ltd | 反射型マスク製造方法 |
| US20070082278A1 (en) * | 2002-02-22 | 2007-04-12 | Hoya Corporation | Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same |
| TWI305865B (en) * | 2003-03-31 | 2009-02-01 | Shinetsu Chemical Co | Photomask blank, photomask, and method of manufacture |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI684062B (zh) * | 2015-03-04 | 2020-02-01 | 日商信越化學工業股份有限公司 | 光罩基板（ｐｈｏｔｏｍａｓｋ ｂｌａｎｋ）、光罩之製造方法及遮罩圖案形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101927549B1 (ko) | 2018-12-10 |
| KR20130102522A (ko) | 2013-09-17 |
| KR101390530B1 (ko) | 2014-04-30 |
| JP2013134435A (ja) | 2013-07-08 |
| KR20130075704A (ko) | 2013-07-05 |
| JP5605917B2 (ja) | 2014-10-15 |
| TW201329615A (zh) | 2013-07-16 |
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