TWI467822B - 非揮發性電阻變化元件 - Google Patents
非揮發性電阻變化元件 Download PDFInfo
- Publication number
- TWI467822B TWI467822B TW101109861A TW101109861A TWI467822B TW I467822 B TWI467822 B TW I467822B TW 101109861 A TW101109861 A TW 101109861A TW 101109861 A TW101109861 A TW 101109861A TW I467822 B TWI467822 B TW I467822B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- silver
- semiconductor layer
- layer
- nickel
- Prior art date
Links
- 230000008859 change Effects 0.000 title claims description 51
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 97
- 229910052709 silver Inorganic materials 0.000 claims description 97
- 239000004332 silver Substances 0.000 claims description 95
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 93
- 239000004065 semiconductor Substances 0.000 claims description 58
- 229910052759 nickel Inorganic materials 0.000 claims description 46
- 229910017052 cobalt Inorganic materials 0.000 claims description 44
- 239000010941 cobalt Substances 0.000 claims description 44
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 44
- 229910052732 germanium Inorganic materials 0.000 claims description 32
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 32
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 20
- 239000010936 titanium Substances 0.000 claims description 20
- 229910052719 titanium Inorganic materials 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- 229910052725 zinc Inorganic materials 0.000 claims description 19
- 239000011701 zinc Substances 0.000 claims description 19
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 5
- 229910052735 hafnium Inorganic materials 0.000 claims 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 4
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 82
- 239000002346 layers by function Substances 0.000 description 70
- 230000004888 barrier function Effects 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 19
- 230000006870 function Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 150000003378 silver Chemical group 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical group [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011124541A JP5502803B2 (ja) | 2011-06-02 | 2011-06-02 | 不揮発性抵抗変化素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201310735A TW201310735A (zh) | 2013-03-01 |
| TWI467822B true TWI467822B (zh) | 2015-01-01 |
Family
ID=47258884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101109861A TWI467822B (zh) | 2011-06-02 | 2012-03-22 | 非揮發性電阻變化元件 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9882127B2 (ja) |
| JP (1) | JP5502803B2 (ja) |
| TW (1) | TWI467822B (ja) |
| WO (1) | WO2012165018A1 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI543337B (zh) | 2013-03-19 | 2016-07-21 | 東芝股份有限公司 | 電阻式隨機存取記憶裝置 |
| JP6319553B2 (ja) * | 2013-11-22 | 2018-05-09 | マイクロンメモリジャパン株式会社 | 抵抗変化素子 |
| JP2019057540A (ja) | 2017-09-19 | 2019-04-11 | 東芝メモリ株式会社 | 記憶素子 |
| KR20190062819A (ko) * | 2017-11-29 | 2019-06-07 | 서울대학교산학협력단 | 저항변화 메모리 소자 및 그 동작방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101964A (zh) * | 2006-07-06 | 2008-01-09 | 三星电子株式会社 | 包括可变电阻材料的非易失存储器件 |
| JP2011049455A (ja) * | 2009-08-28 | 2011-03-10 | Toshiba Corp | 不揮発性メモリ装置及びその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101275800B1 (ko) * | 2006-04-28 | 2013-06-18 | 삼성전자주식회사 | 가변 저항 물질을 포함하는 비휘발성 메모리 소자 |
| KR101159075B1 (ko) * | 2006-06-27 | 2012-06-25 | 삼성전자주식회사 | ｎ+ 계면층을 구비한 가변 저항 랜덤 액세스 메모리 소자 |
| JP2010165950A (ja) * | 2009-01-16 | 2010-07-29 | Toshiba Corp | 不揮発性半導体メモリ及びその製造方法 |
| US8441835B2 (en) * | 2010-06-11 | 2013-05-14 | Crossbar, Inc. | Interface control for improved switching in RRAM |
| US8467227B1 (en) * | 2010-11-04 | 2013-06-18 | Crossbar, Inc. | Hetero resistive switching material layer in RRAM device and method |
| US8187945B2 (en) * | 2010-10-27 | 2012-05-29 | Crossbar, Inc. | Method for obtaining smooth, continuous silver film |
| US8716098B1 (en) * | 2012-03-09 | 2014-05-06 | Crossbar, Inc. | Selective removal method and structure of silver in resistive switching device for a non-volatile memory device |
-
2011
- 2011-06-02 JP JP2011124541A patent/JP5502803B2/ja active Active
-
2012
- 2012-03-19 WO PCT/JP2012/058275 patent/WO2012165018A1/en active Application Filing
- 2012-03-22 TW TW101109861A patent/TWI467822B/zh active
-
2013
- 2013-07-31 US US13/955,546 patent/US9882127B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101964A (zh) * | 2006-07-06 | 2008-01-09 | 三星电子株式会社 | 包括可变电阻材料的非易失存储器件 |
| JP2011049455A (ja) * | 2009-08-28 | 2011-03-10 | Toshiba Corp | 不揮発性メモリ装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9882127B2 (en) | 2018-01-30 |
| US20130306932A1 (en) | 2013-11-21 |
| JP5502803B2 (ja) | 2014-05-28 |
| JP2012253192A (ja) | 2012-12-20 |
| WO2012165018A1 (en) | 2012-12-06 |
| TW201310735A (zh) | 2013-03-01 |
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