TWI466208B - Probe device - Google Patents

Probe device Download PDF

Info

Publication number
TWI466208B
TWI466208B TW099101536A TW99101536A TWI466208B TW I466208 B TWI466208 B TW I466208B TW 099101536 A TW099101536 A TW 099101536A TW 99101536 A TW99101536 A TW 99101536A TW I466208 B TWI466208 B TW I466208B
Authority
TW
Taiwan
Prior art keywords
substrate
wafer
probe
transfer
holding device
Prior art date
Application number
TW099101536A
Other languages
Chinese (zh)
Other versions
TW201029088A (en
Inventor
Tadashi Obikane
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201029088A publication Critical patent/TW201029088A/en
Application granted granted Critical
Publication of TWI466208B publication Critical patent/TWI466208B/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2601Apparatus or methods therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/06711Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/16Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding sharp-pointed workpieces, e.g. needles, pens, fish hooks, tweezers or record player styli

Description

探針裝置Probe device

本發明係關於一種探針裝置,係能使探針卡的探針接觸至半導體晶圓(以下稱作晶圓)等基板之被檢測部的電極片以進行該被檢測晶片的電氣量測。The present invention relates to a probe device in which a probe of a probe card is brought into contact with an electrode piece of a detected portion of a substrate such as a semiconductor wafer (hereinafter referred to as a wafer) to perform electrical measurement of the detected wafer.

習知的探針裝置係使得探針卡之探針針頭等的探針接觸至IC晶片的電極片以進行調查電氣特性的探針試驗。該探針裝置具備:載入埠;檢測部,係具有探針卡及載置台;以及搬送室,係設置有能於該載入埠及該檢測部之間進行晶圓搬送的晶圓搬送機構。接著,使用該晶圓搬送機構來從搬入至載入埠內的搬送容器(晶圓搬運器)中將晶圓取出,並藉由搬送室內的預對位機構抑或設置於晶圓搬送機構處的預對位機構來進行預對位,完成預對位後再將該晶圓搬送至檢測部內的載置台上。A conventional probe device is such that a probe such as a probe needle of a probe card contacts a tip electrode of an IC wafer to perform a probe test for investigating electrical characteristics. The probe device includes: a loading cassette; the detecting unit includes a probe card and a mounting table; and the transfer chamber is provided with a wafer transfer mechanism capable of performing wafer transfer between the loading cassette and the detecting unit . Next, the wafer transfer mechanism is used to take out the wafer from the transfer container (wafer carrier) loaded into the loading cassette, and the pre-alignment mechanism in the transfer chamber or the wafer transfer mechanism is provided. The pre-alignment mechanism performs pre-alignment, and after the pre-alignment is completed, the wafer is transferred to the mounting table in the detecting unit.

使用具備例如2具手臂本體(基板支撐組件)者來作為該晶圓搬送機構,且當檢測部正在進行晶圓之探針試驗的期間,該晶圓搬送機構能藉由一側之手臂本體來將下一個要進行檢測的晶圓取出並進行預對位,並在該檢測部內的晶圓檢測完成之前,以載置有晶圓的狀態於搬送室內待機。接著,當檢測部內的晶圓檢測完成後,則藉由另一側的手臂本體來將檢測完成的晶圓取出,再將該一側之手臂本體所支撐的未檢測晶圓遞給載置台。As the wafer transfer mechanism, for example, two arm bodies (substrate support members) are used, and the wafer transfer mechanism can be used by one side of the arm body while the detection portion is performing the probe test of the wafer. The next wafer to be inspected is taken out and pre-aligned, and the wafer is placed in the transfer chamber until the wafer is detected in the detection unit. Next, after the wafer inspection in the detecting unit is completed, the detected wafer is taken out by the arm body on the other side, and the undetected wafer supported by the arm body on the one side is transferred to the mounting table.

但是,將該探針針頭用作探針時,持續地進行探針試驗會使得電極片的削渣等異物附著於該探針針頭的前端,故必須進行所謂之探針研磨處理以對探針針頭進行研磨來去除該異物。進行該探針研磨處理的時間點,主要分為管理處理片數之情況以及當探針試驗的結果連續地出現錯誤之情況等2種,當控制部係檢測出連續錯誤時,便發出中斷當下處理的命令以進行探針研磨處理。However, when the probe needle is used as a probe, continuous probe test causes foreign matter such as slag of the electrode sheet to adhere to the tip end of the probe needle, so it is necessary to perform a so-called probe polishing process to the probe. The needle is ground to remove the foreign matter. The timing at which the probe polishing process is performed is mainly divided into two cases of managing the number of processed sheets and the case where the results of the probe test are continuously erroneous, and when the control unit detects a continuous error, an interrupt is issued. The processed command is used for probe grinding.

該探針研磨處理係將由陶瓷等所組成之探針針頭研磨專用的晶圓(所謂探針研磨晶圓)放置於載置台上,並藉由使探針針頭與探針研磨晶圓相接觸而進行的。此時,晶圓搬送機構係藉由一側之手臂本體來將置於搬送室內的載入埠下半部內側之基板收納部的探針研磨晶圓取出並搬送至檢測部,再藉由另一側的手臂本體來將檢測部內之已完成檢測的晶圓取出,並將該一側之手臂本體的探針研磨晶圓遞給載置台。The probe polishing process places a wafer for polishing a probe needle composed of ceramics or the like (so-called probe polishing wafer) on a mounting table, and by contacting the probe needle with the probe polishing wafer. ongoing. At this time, the wafer transfer mechanism takes out the probe polishing wafer placed in the substrate storage portion inside the lower half of the transfer chamber in the transfer chamber and transports it to the detection portion, and then transfers the probe to the detection portion. The arm body on one side takes out the wafer that has been detected in the detecting portion, and delivers the probe polishing wafer of the arm body on the one side to the mounting table.

因此,當發生需中斷當下處理的要求時,有時該一側之手臂本體上係支撐有未檢測晶圓。此時,由於該另一側之手臂本體需用來取出檢測部內之已完成檢測的晶圓,故無法藉由該晶圓搬送機構來將探針研磨晶圓取出。因此,便需要於包含有:暫時地將晶圓搬送手臂所支撐的未檢測晶圓搬回搬運器;取出探針研磨晶圓;藉由該探針研磨晶圓來研磨該探針針頭;以及將探針研磨晶圓遞給基板收納部等一連串的中斷處理完成後,才再度從搬運器處將該未檢測晶圓取出。Therefore, when a request to interrupt the current process occurs, sometimes the undetected wafer is supported on the arm body of the one side. At this time, since the arm body on the other side is required to take out the wafer whose detection has been completed in the detecting portion, the probe polishing wafer cannot be taken out by the wafer transfer mechanism. Therefore, it is required to: temporarily transport the undetected wafer supported by the wafer transfer arm back to the carrier; take out the probe to polish the wafer; and grind the wafer to polish the probe needle; After the series of interrupt processing such as transferring the probe polishing wafer to the substrate storage portion is completed, the undetected wafer is again taken out from the carrier.

又,當該檢測部為複數台(例如2台)且該晶圓搬送機構具有3具手臂本體之情況,該3具手臂本體中的2具手臂本體係經常支撐有未檢測晶圓抑或已完成檢測的晶圓,而僅有1具手臂本體為清空的狀態。因此,即使增加該手臂本體的個數,與前述具有2具手臂本體的晶圓搬送機構之情況相同地,仍必須暫時地將晶圓搬回搬運器處。Further, when the detecting unit is a plurality of (for example, two) and the wafer transfer mechanism has three arm bodies, the two arm systems of the three arm bodies often support undetected wafers or have been completed. The wafer is inspected, and only one arm body is in an empty state. Therefore, even if the number of the arm bodies is increased, it is necessary to temporarily transport the wafer back to the carrier as in the case of the above-described wafer transfer mechanism having two arm bodies.

但是,由於搬運器內之槽孔狹窄,當未檢測晶圓回到其內部時,會因晶圓的外緣接觸到搬運器的內部而使得該晶圓於手臂本體上產生移動,抑或在將晶圓置於搬運器之棚架時,因搬運器與晶圓相碰觸而使得晶圓之方向或中心產生偏移。因此,當已完成預對位之晶圓回到搬運器時,前述預對位便有無效之虞,結果在當完成該中斷處理後,則必須對該晶圓重新進行預對位。故,進行該預對位的時間會使得檢測部的待機時間變長,造成探針試驗產量下降的問題。However, since the slot in the carrier is narrow, when the undetected wafer returns to the inside, the wafer will move on the arm body due to the outer edge of the wafer contacting the inside of the carrier, or When the wafer is placed on the scaffold of the carrier, the direction or center of the wafer is offset due to the contact between the carrier and the wafer. Therefore, when the pre-aligned wafer has been completed and returned to the carrier, the aforementioned pre-alignment is invalid, and as a result, after the interrupt processing is completed, the wafer must be re-aligned. Therefore, the time for performing the pre-alignment causes the standby time of the detecting portion to become long, causing a problem that the probe test yield is lowered.

針對此點,專利文獻1記載了一種探針裝置,係於該探針裝置的檢測部內,除了該探針試驗用載置台之外,於該檢測部內額外設置一個載置探針研磨晶圓用的專用載置台,且於該專用載置台上經常載置有探針研磨晶圓。該探針裝置於進行探針卡的探針研磨時係使得探針試驗用之載置台後退,而將該專用載置台移動至該探針卡的下方區域,讓探針研磨晶圓與探針卡的探針針頭相接觸以進行探針卡的探針研磨。因此,即使發生中斷處理,亦能於該晶圓搬送手臂支撐有下一個要進行檢測之晶圓的情況下來進行探針卡的探針研磨。但是,前述探針裝置必須於檢測部內額外設置探針研磨晶圓專用的載置台,故會有使得探針裝置變大型化的問題。近年來探針裝置小型化之需求漸盛,故裝置之大型化並非較佳方法。In this regard, Patent Document 1 discloses a probe device in which a probe for mounting a probe is additionally provided in the detection portion of the probe device in addition to the probe test mounting table. A dedicated mounting table is mounted on the dedicated mounting table with a probe polishing wafer. When the probe device performs the probe polishing of the probe card, the probe test table is retracted, and the dedicated mounting table is moved to the lower region of the probe card, and the probe is used to polish the wafer and the probe. The probe needles of the card are in contact for probe grinding of the probe card. Therefore, even if the interrupt processing occurs, the probe card can be subjected to probe polishing while the wafer transfer arm supports the next wafer to be detected. However, in the probe device, it is necessary to additionally provide a mounting table dedicated to the probe polishing wafer in the detecting portion, which causes a problem that the probe device is increased in size. In recent years, the demand for miniaturization of probe devices has been increasing, so that the enlargement of devices is not a preferred method.

專利文獻1:日本專利特開2006-128451號公報(段落符號0022、0035)Patent Document 1: Japanese Patent Laid-Open No. 2006-128451 (paragraph symbols 0022, 0035)

有鑑於前述情事,本發明之目的係提供一種於使用維護用基板來進行檢測部之維護作業時,能抑制產量下降的探針裝置。In view of the foregoing, it is an object of the present invention to provide a probe device capable of suppressing a decrease in yield when a maintenance operation of a detecting portion is performed using a maintenance substrate.

本發明之探針裝置,係使得載置於載置台之被檢測對象之基板的電極片與探針卡的探針相接觸以測量該基板之被檢測部的電氣特性,其特徵在於具備:載入埠,係用以載置收納有複數個基板的搬送容器;基板搬送機構,係於該載入埠所載置的該搬送容器與檢測部的載置台之間進行該基板的遞送,且具有互相獨立並可自由進退的複數個基板支撐組件,當其支撐著未檢測之該基板而待機時,係會有一個清空的該基板支撐組件;搬送室,係連接至該載入埠與該檢測部,並能讓該基板搬送機構於其內部移動;預對位機構,係設置於該搬送室內,具有能固定該基板並旋轉的迴轉台以及檢測出該迴轉台上之該基板周緣的周緣檢知部,以針對自該搬送容器中取出的基板進行方向與中心部的定位;基板收納部,係設置於該搬送室內並收納有用以進行該檢測部之維護作業的維護用基板;基板保持裝置,係設置於該搬送室內並具有能從該基板搬送機構處接收該基板且進行吸著保持之吸著機構;以及控制部,係控制該基板搬送機構,當該檢測部之載置台處載置有基板時且發生了需中斷當下處理以進行該檢測部維護作業之情況,能將該基板支撐組件所支撐的該基板保持於該基板保持裝置,同時藉由該基板支撐組件來將該基板收納部內的該維護用基板取出而與該載置台上的基板進行交換。In the probe device of the present invention, the electrode sheet placed on the substrate to be detected of the mounting table is brought into contact with the probe of the probe card to measure the electrical characteristics of the detected portion of the substrate, and is characterized in that: The loading container is configured to carry a transfer container in which a plurality of substrates are housed, and the substrate transfer mechanism performs the transfer of the substrate between the transfer container and the mounting table of the detecting unit mounted on the loading cassette. a plurality of substrate supporting assemblies independent of each other and freely advancing and retracting, when it supports the undetected substrate and stands by, there is an empty substrate supporting assembly; the transfer chamber is connected to the loading cassette and the detecting And the substrate transfer mechanism is movable inside; the pre-alignment mechanism is disposed in the transfer chamber, has a turntable capable of fixing the substrate and rotating, and detects a peripheral edge of the substrate on the turntable The omnidirectional portion positions the substrate and the center portion of the substrate taken out from the transfer container; the substrate accommodating portion is installed in the transfer chamber and is stored for maintenance of the detecting portion. The substrate for maintenance; the substrate holding device is provided in the transfer chamber and has a absorbing mechanism capable of receiving the substrate from the substrate transfer mechanism and performing absorbing and holding; and a control unit for controlling the substrate transfer mechanism When the substrate is placed on the mounting table of the detecting portion and the current processing is interrupted to perform the maintenance operation of the detecting portion, the substrate supported by the substrate supporting assembly can be held by the substrate holding device while The substrate supporting unit takes out the maintenance substrate in the substrate housing portion and exchanges the substrate on the mounting table.

又,本發明之探針裝置中,例如該維護用基板係專門用以研磨該探針卡之探針針頭的基板。又,本發明之探針裝置中,該基板保持裝置係可鄰設於該基板收納部的上下左右處。Further, in the probe device of the present invention, for example, the maintenance substrate is a substrate exclusively for polishing the probe needle of the probe card. Further, in the probe device of the present invention, the substrate holding device may be disposed adjacent to the upper and lower sides of the substrate housing portion.

又,本發明之探針裝置中,例如設置有複數個該檢測部,而該控制部係在當藉由該基板支撐組件來將由第1檢測部完成檢測後的該基板搬出時,且於第2檢測部發生了需中斷當下處理以進行該維護作業之情況,能將該基板支撐組件所支撐之已完成檢測的該基板保持於該基板保持裝置,以進行該維護作業。又,本發明之探針裝置中,例如除了前述預對位機構之外,更於該基板保持裝置處設置有預對位機構,且該基板保持裝置具有預對位用迴轉台的功能,能針對保持於其上之該基板進行預對位。Further, in the probe device of the present invention, for example, a plurality of the detecting portions are provided, and the control portion is configured to carry out the substrate after the detection by the first detecting portion by the substrate supporting unit, and (2) When the detecting unit needs to interrupt the current processing to perform the maintenance work, the substrate supported by the substrate supporting unit and the completed substrate can be held by the substrate holding device to perform the maintenance operation. Further, in the probe device of the present invention, for example, in addition to the aforementioned pre-alignment mechanism, a pre-alignment mechanism is provided at the substrate holding device, and the substrate holding device has a function of a pre-alignment rotary table, and The substrate is pre-aligned against the substrate held thereon.

本發明之探針裝置中,在載入埠與檢測部之間進行基板搬送用的基板搬送機構係具有複數個基板支撐組件,且於支撐有未檢測基板的狀態下待機時,會具有一個清空狀態之基板支撐組件,而當檢測部內放置有已完成檢測之基板的狀態下發生需中斷當下處理並以維護用基板來進行檢測部的維護作業時,能藉由具備有吸著機構的基板保持裝置來暫時地接收由基板支撐組件所支撐之已完成預對位的未檢測基板。因此,能將未檢測基板保持於從基板搬送機構處所接收時的姿勢(基板的中心位置及方向)的狀態,故無需再次進行預對位,而可直接搬入檢測部。因此,能縮短檢測部的待機時間以抑制產量下降。In the probe device of the present invention, the substrate transport mechanism for transporting the substrate between the loading cassette and the detecting unit has a plurality of substrate supporting members, and has a clear state when it stands by while supporting the undetected substrate. In the state of the substrate supporting member, when the substrate to be inspected is placed in the detecting portion, the current processing to interrupt the current processing and the maintenance portion of the detecting portion to perform the maintenance operation can be performed by the substrate having the absorbing mechanism. The device temporarily receives the un-detected substrate that has been pre-aligned by the substrate support assembly. Therefore, the undetected substrate can be held in the state of the posture (the center position and the direction of the substrate) when it is received from the substrate transfer mechanism, so that it is not necessary to perform the pre-alignment again, and it can be directly carried into the detection portion. Therefore, the standby time of the detecting portion can be shortened to suppress the decrease in the yield.

參考圖1至圖12來說明本發明第1實施形態的探針裝置。如圖1至圖3所示,探針裝置具備:裝載部1,係用以傳遞排列有複數個被檢測晶片(被檢測部)之基板的晶圓W(參考圖6);以及探針裝置本體2,係針對晶圓W來進行探針試驗(probing)。首先,簡單地說明有關裝載部1及探針裝置本體2的整體配置。A probe device according to a first embodiment of the present invention will be described with reference to Figs. 1 to 12 . As shown in FIGS. 1 to 3, the probe device includes a loading unit 1 for transferring a wafer W on which a plurality of substrates to be detected (detected portions) are arranged (refer to FIG. 6); and a probe device The body 2 performs probe probing on the wafer W. First, the overall arrangement of the loading unit 1 and the probe device body 2 will be briefly described.

裝載部1係具備:第1載入埠11與第2載入埠12,係能讓收納有複數個晶圓W的密閉型搬送容器(搬運器)之FOUP(Front Opening Unified Pod)100搬入且沿Y方向(圖中左右方向)相互分離地對向設置;以及搬送室10,係設置於該等載入埠11、12之間。載入埠11(12)各自具備有箱體13(14),並能從該載入埠11(12)之圖中X方向側所設置的搬入口15(16)處將FOUP100搬入至箱體13(14)內。搬入後之該FOUP100藉由該載入埠11(12)所具備的蓋體開閉機構(圖中未顯示)來將蓋體取下,並將該蓋體固定於載入埠11(12)內側壁處,再旋轉該已取下蓋體的FOUP100,使其開口部面向搬送室10側。The loading unit 1 includes a first loading cassette 11 and a second loading cassette 12, and is configured to carry a FOUP (Front Opening Unified Pod) 100 of a sealed transport container (carrier) in which a plurality of wafers W are stored. The Y-direction (the horizontal direction in the drawing) is disposed opposite to each other; and the transfer chamber 10 is disposed between the loading cassettes 11 and 12. Each of the loading cassettes 11 (12) is provided with a housing 13 (14), and the FOUP 100 can be carried into the cabinet from the loading port 15 (16) provided on the X-direction side in the map of the loading cassette 11 (12). Within 13(14). After the loading, the FOUP 100 removes the cover by the cover opening and closing mechanism (not shown) provided in the loading cassette 11 (12), and fixes the cover in the loading cassette 11 (12). At the side wall, the FOUP 100 from which the cover has been removed is rotated so that the opening faces the transfer chamber 10 side.

裝載部1係設置有用以控制如圖2所示之探針裝置的控制部5。該控制部5係由例如電腦所組成,且除了由記憶體、CPU所組成之資料處理部之外,更具備有探針試驗處理程式50與中斷控制處理程式51等處理程式。探針試驗處理程式50係由用以控制:將FOUP100搬入至載入埠11(12),再從FOUP100內將晶圓W搬入至探針裝置本體2以進行探針試驗,然後將該晶圓W搬回FOUP100乃至將FOUP100搬出為止的晶圓W搬送程序與該一連串之各部位動作的步驟群所組成。又, 中斷控制處理程式51則由用以控制如後述在探針試驗中所發生中斷處理時之探針裝置動作的步驟群所組成。該等處理程式(亦包含關於處理參數之輸入操作與顯示等處理程式)係收納於例如軟碟、光碟(CD)、MO碟(光磁氣碟)、硬碟等記憶媒體內而安裝至該控制部5。The loading unit 1 is provided with a control unit 5 for controlling the probe device as shown in Fig. 2 . The control unit 5 is composed of, for example, a computer, and includes a data processing unit including a memory and a CPU, and a processing program such as a probe test processing program 50 and an interrupt control processing program 51. The probe test processing program 50 is used to control: the FOUP 100 is carried into the loading cassette 11 (12), and the wafer W is carried into the probe device body 2 from the FOUP 100 for probe testing, and then the wafer is tested. W moves back to the FOUP 100 and even consists of a wafer W transfer program until the FOUP 100 is carried out and a series of steps in which the various parts operate. also, The interrupt control processing program 51 is composed of a group of steps for controlling the operation of the probe device when the interrupt processing occurs in the probe test as will be described later. The processing programs (including processing programs such as input operations and displays for processing parameters) are stored in a memory medium such as a floppy disk, a compact disc (CD), an MO disc (a magneto-optical disc), or a hard disk, and are attached thereto. Control unit 5.

該探針裝置本體2係在圖中X軸方向上與裝載部1並列地鄰設至該裝載部1,並具有沿Y軸方向並列之複數台(例如4台)檢測部21。另外,圖2係顯示將後述上板25取下之狀態的檢測部21。The probe device main body 2 is provided adjacent to the loading unit 1 in the X-axis direction in the drawing, and has a plurality of (for example, four) detecting portions 21 arranged in the Y-axis direction. In addition, FIG. 2 shows the detecting unit 21 in a state in which the upper plate 25 described later is removed.

檢測部21係具備有如圖2、圖3所示的框體22,該框體22內部則設置有台座單元24與上側攝影部9。台座單元24係能自由地沿X、Y、Z(上下)軸方向移動,亦即於水平面上能自由地縱橫移動且沿高度方向能自由地移動,而其上部處更可繞鉛直軸旋轉。該台座單元24的上部係載置晶圓W用的載置台,並積載了具有真空吸著功能的晶圓挾具4。接著,該台座單元24的側部則設置有下側攝影部8,其具備有用以拍攝如後述探針卡6的微型攝影機等。The detecting unit 21 includes a housing 22 as shown in FIGS. 2 and 3 , and a pedestal unit 24 and an upper imaging unit 9 are provided inside the housing 22 . The pedestal unit 24 is freely movable in the X, Y, and Z (up and down) axis directions, that is, it can freely move vertically and horizontally on the horizontal plane and can move freely in the height direction, and the upper portion can be rotated about the vertical axis. The upper portion of the pedestal unit 24 is placed on a mounting table for the wafer W, and a wafer cooker 4 having a vacuum absorbing function is stacked. Next, the side portion of the pedestal unit 24 is provided with a lower side imaging unit 8 provided with a micro camera or the like for capturing a probe card 6 which will be described later.

晶圓挾具4係能在進行晶圓W傳遞的傳遞位置、晶圓表面之攝影位置以及使得探針卡6之探針針頭7接觸至晶圓W的接觸位置(檢測位置)之間自由地移動。又,如圖3(b)所示,於該框體22側面處,即與搬送室10密接的側面處係形成有連接該搬送室10內部與該框體22內部的搬入出口23。然後,能藉由該搬入出口23來將晶圓W搬送至框體22內之晶圓挾具4。接著,上側攝影部9係具備有用以拍攝載置於晶圓挾具4之晶圓W的微型攝影機等。The wafer cooker 4 is freely movable between a transfer position at which the wafer W is transferred, a photographing position of the wafer surface, and a contact position (detection position) at which the probe needle 7 of the probe card 6 contacts the wafer W. mobile. Further, as shown in FIG. 3(b), a loading port 23 that connects the inside of the transfer chamber 10 and the inside of the casing 22 is formed on the side surface of the casing 22, that is, the side surface that is in close contact with the transfer chamber 10. Then, the wafer W can be transferred to the wafer cooker 4 in the casing 22 by the carry-in port 23. Next, the upper photographing unit 9 is provided with a micro camera or the like for photographing the wafer W placed on the wafer cooker 4.

如圖3(a)所示,於晶圓挾具4及上側攝影部9的移動區域上方係設置有作為該框體22之頂部的上板25,探針卡6則係安裝固定於該上板25處。於探針卡6的上面側安裝有圖中未顯示的測試頭,該探針卡6與測試頭係藉由圖中未顯示的探針接腳單元來形成電氣連接。又,於探針卡6的下面側係對應於該晶圓W之電極片的配置,而將各自電氣連接至上面側電極群的探針(探針針頭7)設置於例如該探針卡6的整面上。As shown in FIG. 3(a), an upper plate 25 as a top portion of the frame 22 is provided above the moving area of the wafer cooker 4 and the upper image capturing unit 9, and the probe card 6 is attached and fixed thereto. Plate 25. A test head (not shown) is mounted on the upper side of the probe card 6, and the probe card 6 and the test head are electrically connected by a probe pin unit not shown. Further, on the lower surface side of the probe card 6, the arrangement of the electrode sheets corresponding to the wafer W is provided, and the probes (probe needles 7) each electrically connected to the upper side electrode group are provided, for example, to the probe card 6. On the whole face.

如圖2、圖3所示,搬送室10係設置有作為基板搬送機構的晶圓搬送手臂3。晶圓搬送手臂3之結構係於能沿鉛直軸自由旋轉、自由昇降並且能沿圖中Y方向自由移動的搬送基台30處設置有能自由進退的第1手臂本體35與第2手臂本體36等2具手臂本體(基板支撐組件)。此處,符號33係能沿圖中Y方向延伸的導軌而移動的基台移動部,符號32係能相對該基台移動部33而昇降的基台昇降部,符號31則係設置於該基台昇降部32的迴轉部。As shown in FIGS. 2 and 3, the transfer chamber 10 is provided with a wafer transfer arm 3 as a substrate transfer mechanism. The structure of the wafer transfer arm 3 is provided with a first arm body 35 and a second arm body 36 that can freely advance and retreat at a transfer base 30 that can freely rotate along a vertical axis and freely move up and down and can move freely in the Y direction in the drawing. Wait for 2 arm bodies (substrate support assembly). Here, reference numeral 33 is a base moving portion that can move along a guide rail extending in the Y direction in the drawing, and reference numeral 32 is a base lifting portion that can be raised and lowered with respect to the base moving portion 33, and a symbol 31 is provided at the base. The turning portion of the table lifting portion 32.

如圖4所示,第1手臂本體35與第2手臂本體36係形成有朝向前端側的U字型缺口部55、56。然後,在搬送基台30之上方面位於手臂本體35(36)左右兩端處各自設置有平行的2條導軌37,該第1手臂本體35與該第2手臂本體36係各自藉由手臂導件38、39而沿著該等導軌37、37來進行前後移動。As shown in FIG. 4, the first arm main body 35 and the second arm main body 36 are formed with U-shaped notch portions 55 and 56 that face the distal end side. Then, on the upper and lower ends of the arm body 35 (36), two parallel guide rails 37 are provided on the left and right ends of the arm body 35, and the first arm body 35 and the second arm body 36 are each guided by the arm. The pieces 38, 39 are moved back and forth along the guide rails 37, 37.

又,搬送基台30係設置有預對位機構40(參考圖4),其係用以針對第1手臂本體35抑或第2手臂本體36所載置的晶圓W進行預對位,以調整該晶圓W的方向,同時檢測其中心位置。如圖4所示,該預對位機構40具備挾具部41、感測器跨樑42、光感測器43以及光通過部44,並於手臂本體35、36下方處設置有圖中未顯示的發光部。Further, the transfer base 30 is provided with a pre-alignment mechanism 40 (refer to FIG. 4) for pre-aligning the wafer W placed on the first arm body 35 or the second arm body 36 to adjust The direction of the wafer W is simultaneously detected at its center position. As shown in FIG. 4, the pre-alignment mechanism 40 is provided with a cooker portion 41, a sensor spanner 42, a light sensor 43, and a light passage portion 44, and is disposed below the arm bodies 35, 36. The light emitting portion is displayed.

挾具部41係能旋轉該晶圓W的迴轉台,挾具部41的迴轉中心係設定為對應於在搬送基台30上呈後退狀態之該手臂本體35(36)上的該晶圓W之中心位置處。該挾具部41係具備有能沿圖中Z軸方向昇降的昇降部,且能於非進行預對位的待機狀態時下降而停止於不會干擾該手臂本體35、36進退的位置處。接著,於進行預對位時則上昇而從手臂本體35、36上將晶圓W稍微地抬起以進行旋轉。The cooker unit 41 is a turntable that can rotate the wafer W, and the center of rotation of the cooker unit 41 is set to correspond to the wafer W on the arm body 35 (36) in a retracted state on the transfer base 30. At the center of the location. The cooker portion 41 is provided with a lifting portion that can be raised and lowered in the Z-axis direction in the drawing, and can be lowered when the standby state is not pre-aligned, and stopped at a position that does not interfere with the advancement and retreat of the arm bodies 35 and 36. Next, when the pre-alignment is performed, the wafer W is lifted up from the arm bodies 35 and 36 to be rotated.

搬送基台30的上方面係設置有不會與該手臂本體35、36所支撐的晶圓W產生干擾的感測器跨樑42,該感測器跨樑42係搭載有能接受來自圖中未顯示之發光部所照射出並穿透該晶圓W之光線的光感測器43。接著,手臂本體35、36係形成有沿圖中X軸方向延伸的光透過部44,而發光部係設置於該光透過部44下方。然後,發光部的光線會通過該光透過部44,並從下方照射至包含藉由挾具部41而從手臂本體35、36處抬起之該晶圓W的周緣部(端部)區域。The upper surface of the transfer base 30 is provided with a sensor cross member 42 that does not interfere with the wafer W supported by the arm bodies 35 and 36. The sensor cross member 42 is mounted with an acceptable input from the figure. A light sensor 43 that emits light that penetrates and penetrates the wafer W by a light-emitting portion that is not shown. Next, the arm bodies 35 and 36 are formed with a light transmitting portion 44 extending in the X-axis direction in the drawing, and the light emitting portion is disposed below the light transmitting portion 44. Then, the light from the light-emitting portion passes through the light-transmitting portion 44, and is irradiated from below to a peripheral portion (end portion) region of the wafer W that is lifted from the arm bodies 35, 36 by the cooker portion 41.

藉由預對位機構40如後述般地進行預對位。首先,藉由挾具部41來將第1手臂本體35抑或第2手臂本體36上的晶圓W稍微抬起,並旋轉該晶圓W。接著,從發光部將光線照射至包含晶圓W之周緣部(端部)區域,再透過光感測器43來檢測穿透晶圓W的光線,並將檢出訊號傳送給控制部5。控制部5係根據該檢出訊號,而於晶圓W係偏心時則調整第1手臂本體35抑或第2手臂本體36的位置,從挾具部41上將晶圓W傳遞給該第1手臂本體35抑或該第2手臂本體36,並於補正該偏心的偏移量後再將晶圓W放回挾具部41上,以修正該晶圓W的偏心。然後,旋轉該挾具部41來調整晶圓W的方向,以使得晶圓缺口等係朝向第1手臂本體35抑或第2手臂本體36上的特定方向。藉以進行該晶圓W方向及中心的位置調整。Pre-alignment is performed by the pre-alignment mechanism 40 as will be described later. First, the first arm body 35 or the wafer W on the second arm body 36 is slightly lifted by the cooker portion 41, and the wafer W is rotated. Then, light is irradiated from the light-emitting portion to the peripheral portion (end portion) including the wafer W, and the light passing through the wafer W is detected by the light sensor 43 to transmit the detection signal to the control portion 5. The control unit 5 adjusts the position of the first arm main body 35 or the second arm main body 36 when the wafer W is eccentric based on the detection signal, and transfers the wafer W from the cookware unit 41 to the first arm. The main body 35 or the second arm body 36 corrects the offset of the eccentricity and then returns the wafer W to the cooker portion 41 to correct the eccentricity of the wafer W. Then, the cooker portion 41 is rotated to adjust the direction of the wafer W such that the wafer notch or the like faces the first arm body 35 or the specific direction on the second arm body 36. The position adjustment of the W direction and the center of the wafer is performed.

又,如圖2、圖3所示,搬送室10係設置有基板收納部60,且其係棚狀地載置有複數個例如陶瓷所組成的探針卡6之探針針頭7研磨用的探針研磨晶圓Wb(參考圖6)。基板收納部60係設置於載入埠11(參考各圖)之下方側且能讓晶圓搬送手臂3之手臂本體35、36接近以進行存取的位置。Further, as shown in FIG. 2 and FIG. 3, the transfer chamber 10 is provided with a substrate housing portion 60, and the probe needle 7 of a plurality of probe cards 6, for example, ceramics, is placed in a stud manner for polishing. The probe grinds the wafer Wb (refer to FIG. 6). The substrate housing portion 60 is provided at a position below the loading cassette 11 (refer to each drawing) and allows the arm bodies 35 and 36 of the wafer transfer arm 3 to approach for access.

該基板收納部60係具備有如圖5、圖6所示的基台61以及安裝於該基台61上方面的3個載匣組件62、63、64。載匣組件62、63、64係各自具有複數個(例如6個)爪部65,該爪部65係沿Z軸方向且相距特定間隔所層積而成。接著,由於爪部65之間具有間隙,該載匣組件62、63、64的縱向(Z軸方向)的剖面形狀係形成梳齒狀。又,各載匣組件62、63、64之間,其爪部65於Z軸方向之形成位置係約略均勻的。The substrate housing portion 60 includes a base 61 as shown in FIGS. 5 and 6 and three carrier assemblies 62, 63, and 64 attached to the base 61. Each of the carrier members 62, 63, and 64 has a plurality of (for example, six) claw portions 65 which are formed by laminating in a Z-axis direction at a predetermined interval. Next, due to the gap between the claw portions 65, the cross-sectional shape of the carrier members 62, 63, 64 in the longitudinal direction (Z-axis direction) is formed into a comb shape. Further, between the respective load carrying members 62, 63, 64, the positions at which the claw portions 65 are formed in the Z-axis direction are approximately uniform.

當以手臂本體35(36)的進退方向來作為前後方向時,該載匣組件62、63、64係位於基台61的上方面,且於右側的前後方分別安裝有一個載匣組件62、64,而於左側的中間部則安裝有一個載匣組件63。接著,藉由載匣組件62、63、64的爪部65以支撐周緣部3點的狀態下來載置前述探針研磨晶圓Wb。即,基板收納部60係藉由各載匣組件62、63、64的爪部65來形成用以收納探針研磨晶圓Wb等的棚架。另外,如圖6中,為了方便說明,故於基板收納部60棚架只收納了1片探針研磨晶圓Wb,但本實施形態中,其他的棚架處亦收納有複數個探針研磨晶圓Wb。When the forward and backward directions of the arm body 35 (36) are used as the front-rear direction, the load-carrying assemblies 62, 63, 64 are located on the upper side of the base 61, and a load-carrying assembly 62 is respectively mounted on the front and rear sides of the right side. 64, and a load carrying assembly 63 is mounted on the middle portion of the left side. Next, the probe polishing wafer Wb is placed by the claw portions 65 of the carrier members 62, 63, 64 so as to support the peripheral portion at three points. In other words, the substrate housing portion 60 forms a scaffold for accommodating the probe polishing wafer Wb or the like by the claw portions 65 of the respective cartridge assemblies 62, 63, and 64. In addition, as shown in FIG. 6, for the sake of convenience of explanation, only one probe polishing wafer Wb is housed in the substrate storage unit 60. However, in the present embodiment, a plurality of probe polishing are also accommodated in other chassis. Wafer Wb.

又,基板收納部60上方係設置有基板保持裝置70,其係能暫時地固定手臂本體35、36所支撐的搬送中之晶圓W。該基板保持裝置70係位於基台61之後方側的一側處,且安裝有沿鉛直方向延伸至較載匣組件62、63、64更高水平位置的支撐部71。然後,從該支撐部71處朝向基板收納部60上方的約略中央部水平地延伸出一腕部72。該腕部72的前端係設置有與該腕部72一體成型且用以真空吸著該約略圓盤狀之晶圓W的吸著部(真空挾具)73,且該吸著部73的上方面係形成有複數個真空吸著孔74。又,於腕部72與吸著部73之間係形成有凹部75,故當手臂本體35、36接近至基板保持裝置70以進行晶圓W傳遞時,該手臂本體35、36與腕部72不會形成干擾。另外,設定存取位置與進退時的晶圓搬送手臂3的角度,以使得晶圓搬送手臂3的手臂本體35(36)能經常地由相同位置以相同角度來朝向基板保持裝置70進退移動,故無論反覆地進退多少次,亦不會讓手臂本體35(36)與基板保持裝置70相互接觸而干擾。Further, a substrate holding device 70 is provided above the substrate housing portion 60, and the wafer W being conveyed by the arm bodies 35 and 36 can be temporarily fixed. The substrate holding device 70 is located at one side of the rear side of the base 61, and is mounted with a support portion 71 that extends in the vertical direction to a position higher than the load carrying members 62, 63, 64. Then, a wrist portion 72 is horizontally extended from the support portion 71 toward the approximately central portion above the substrate housing portion 60. The front end of the wrist portion 72 is provided with a suction portion (vacuum cooker) 73 integrally formed with the wrist portion 72 for vacuum-absorbing the approximately disk-shaped wafer W, and the upper portion of the suction portion 73 In the aspect, a plurality of vacuum suction holes 74 are formed. Further, a recess 75 is formed between the arm portion 72 and the absorbing portion 73. Therefore, when the arm bodies 35, 36 approach the substrate holding device 70 for wafer W transfer, the arm bodies 35, 36 and the wrist portion 72 are provided. No interference will be formed. Further, the access position and the angle of the wafer transfer arm 3 at the time of advancement and retreat are set such that the arm body 35 (36) of the wafer transfer arm 3 can constantly move forward and backward toward the substrate holding device 70 at the same angle from the same position. Therefore, no matter how many times the forward and backward movements are repeated, the arm body 35 (36) and the substrate holding device 70 are not in contact with each other and interfere.

該基板保持裝置70藉由以吸著部73來吸著保持該晶圓W並與晶圓搬送手臂3之間進行晶圓傳遞時,能將晶圓W保持於固定之狀態。因此,能保持該晶圓W不使其中心位置及方向產生偏移。故該基板保持裝置70可稱為晶圓W的姿勢保持裝置。When the substrate holding device 70 sucks and holds the wafer W by the absorbing portion 73 and transfers the wafer to and from the wafer transfer arm 3, the wafer W can be held in a fixed state. Therefore, the wafer W can be kept from shifting in the center position and direction. Therefore, the substrate holding device 70 can be referred to as a posture holding device of the wafer W.

其次,參考圖7來說明從晶圓搬送手臂3將晶圓W遞給基板保持裝置70時之該手臂本體35(36)的動作。首先,移動晶圓搬送手臂3以使得晶圓搬送手臂3的手臂本體35(36)能移動至可對基板收納部60進行存取的位置。其次,如圖7(a)所示,讓支撐有晶圓W的手臂本體35(36)朝向該吸著部73的上方位置處前進。此時,該手臂本體35(36)係如前述般地相對基板保持裝置70以經常相同之方向進出入。然後,如圖5所示,吸著部73相對地進入該手臂本體35(36)的缺口部55(56)內,手臂本體35(36)的突出部分則進入凹部75內,而在使得晶圓W之約略中央部分與該吸著部73中央部形成一致的位置處將手臂本體35(36)停止。此時,晶圓W與吸著部73僅相距一微小間隙的狀態。Next, the operation of the arm body 35 (36) when the wafer W is transferred from the wafer transfer arm 3 to the substrate holding device 70 will be described with reference to FIG. First, the wafer transfer arm 3 is moved so that the arm body 35 (36) of the wafer transfer arm 3 can be moved to a position where the substrate storage portion 60 can be accessed. Next, as shown in FIG. 7(a), the arm body 35 (36) supporting the wafer W is advanced toward the upper position of the absorbing portion 73. At this time, the arm body 35 (36) is moved in and out in the same direction as the substrate holding device 70 as described above. Then, as shown in FIG. 5, the absorbing portion 73 relatively enters the notch portion 55 (56) of the arm body 35 (36), and the protruding portion of the arm body 35 (36) enters the concave portion 75, thereby causing the crystal The arm body 35 (36) is stopped at a position where the approximate central portion of the circle W coincides with the central portion of the absorbing portion 73. At this time, the wafer W and the absorbing portion 73 are only separated by a small gap.

其次,如圖7(b)所示,於真空吸著孔74(參考圖5)處藉由腕部72內的吸力通路(圖中未顯示)來進行吸引的同時降下該手臂本體35(36),以使得晶圓W被吸附於吸著部73(真空吸著)。因此能將該晶圓W保持於基板保持裝置70上且不會移動的狀態(保持姿勢的狀態)。然後,如圖7(c)所示,該手臂本體35(36)下降後係停止於吸著部73與載匣組件62、63、64之間區域處,並朝搬送基台30退後。藉此,基板保持裝置70便能將支撐於手臂本體35(36)的晶圓W在維持其姿勢的狀態下來保持。另外,藉由手臂本體35(36)來接收被保持於基板保持裝置70上的晶圓W時,則以前述說明相反的順序,讓手臂本體35(36)與基板保持裝置70協調運作以接收該晶圓W。Next, as shown in Fig. 7(b), the arm body 35 is lowered while the suction is performed by the suction passage (not shown) in the wrist portion 72 at the vacuum suction hole 74 (refer to Fig. 5). ) so that the wafer W is adsorbed to the absorbing portion 73 (vacuum suction). Therefore, the wafer W can be held by the substrate holding device 70 without moving (state in which the posture is maintained). Then, as shown in FIG. 7(c), the arm body 35 (36) is lowered and stopped at the region between the absorbing portion 73 and the carrier assemblies 62, 63, 64, and is retracted toward the transfer base 30. Thereby, the substrate holding device 70 can hold the wafer W supported by the arm body 35 (36) while maintaining its posture. Further, when the wafer W held by the substrate holding device 70 is received by the arm body 35 (36), the arm body 35 (36) is coordinated with the substrate holding device 70 to receive in the reverse order of the foregoing description. The wafer W.

其次,簡單地說明以該探針裝置來進行探針試驗的一連串之流程。此處,為了方便說明,故將圖2所示檢測部21從載入埠11側的檢測部21開始依序命名為第1~第4檢測部21。又,該探針試驗中,為了方便說明,故設定以第1手臂本體35來進行晶圓W的預對位。Next, a series of processes for performing probe testing using the probe device will be briefly described. Here, for convenience of explanation, the detecting unit 21 shown in FIG. 2 is sequentially named as the first to fourth detecting units 21 from the detecting unit 21 on the side of the loading port 11 . Further, in the probe test, for convenience of explanation, the first arm body 35 is set to perform the pre-alignment of the wafer W.

首先,如圖2所示,藉由晶圓搬送手臂3來從載置於載入埠11的FOUP100內將晶圓W搬出,並如前述般藉由組合設置於晶圓搬送手臂3處的預對位機構40來進行預對位後,再將晶圓W搬送至第1檢測部21的晶圓挾具4上。然後與第1檢測部21相同地依序將晶圓W搬送至第2~第4檢測部21。於所有的檢測部21內皆搬入有晶圓W,而當所有的檢測部21正在進行探針試驗的期間,該晶圓搬送手臂3係藉由第1手臂本體35來將下一個要進行檢測的晶圓W搬出並進行預對位,而於搬送室10內待機。First, as shown in FIG. 2, the wafer W is carried out from the FOUP 100 placed in the loading cassette 11 by the wafer transfer arm 3, and the pre-set at the wafer transfer arm 3 is combined as described above. After the registration mechanism 40 performs the pre-alignment, the wafer W is transferred to the wafer cooker 4 of the first detecting unit 21. Then, the wafer W is sequentially transferred to the second to fourth detecting portions 21 in the same manner as the first detecting unit 21. The wafer W is carried in all of the detecting portions 21, and while all the detecting portions 21 are performing the probe test, the wafer transfer arm 3 is to be detected by the first arm body 35. The wafer W is carried out and pre-aligned, and is placed in the transfer chamber 10 for standby.

於搬入有晶圓W的第1檢測部21內,使用下側攝影部8來拍攝探針卡6,同時使用上側攝影部9來拍攝該晶圓挾具4上的晶圓W,以獲得探針針頭7的前端位置以及晶圓W表面的電極片(圖中未顯示)位置之攝影資料,再根據該攝影資料來計算出使探針針頭7與電極片相接觸之接觸座標,並將晶圓W移動至該接觸座標處。然後,讓探針針頭7與電極片相接觸以進行探針試驗。In the first detecting unit 21 in which the wafer W is loaded, the lower side imaging unit 8 is used to image the probe card 6, and the upper imaging unit 9 is used to image the wafer W on the wafer cooker 4 to obtain a probe. The photographic data of the position of the front end of the needle 7 and the position of the electrode sheet (not shown) on the surface of the wafer W, and then the contact coordinates for contacting the probe needle 7 with the electrode sheet are calculated based on the photographic data, and the crystal is The circle W moves to the contact coordinate. Then, the probe needle 7 was brought into contact with the electrode sheet to perform a probe test.

待探針試驗完成後,晶圓挾具4會移動到搬入出口23附近。此時,由於晶圓搬送手臂3的第2手臂本體36上未載置有晶圓W,故藉由第2手臂本體36來取出已完成檢測之晶圓W,同時將第1手臂本體35所支撐的未檢測晶圓W遞給晶圓挾具4。然後,晶圓搬送手臂3將已完成檢測之晶圓W搬回FOUP100,同時當FOUP100內收納有仍未檢測之晶圓W時,則將下一個要作為檢測對象的晶圓W搬出。該一連串的步驟於其他的第2~第4檢測部21亦同樣地進行。經過以上步驟,本實施形態之探針裝置便能藉由一個晶圓搬送手臂3來依序地將晶圓W搬送至4台檢測部21處以進行探針試驗。After the probe test is completed, the wafer cooker 4 moves to the vicinity of the carry-in exit 23. At this time, since the wafer W is not placed on the second arm body 36 of the wafer transfer arm 3, the wafer W that has been detected is taken out by the second arm body 36, and the first arm body 35 is placed. The undetected wafer W that is supported is delivered to the wafer cooker 4. Then, the wafer transfer arm 3 carries the wafer W that has been inspected back to the FOUP 100, and when the wafer W that has not been detected is stored in the FOUP 100, the wafer W to be detected is carried out. This series of steps is performed in the same manner in the other second to fourth detecting units 21. Through the above steps, the probe device of the present embodiment can sequentially transport the wafer W to the four detecting portions 21 by one wafer transfer arm 3 to perform the probe test.

前述探針試驗係控制部5根據探針試驗處理程式50來控制各單元所進行的。接著,控制部5依照探針試驗的結果來判斷是否要中斷當下處理以進行探針針頭7的研磨,並依需求根據該中斷控制處理程式51來進行研磨該探針針頭7的中斷處理。其次,參考圖8至圖12來說明有關該中斷處理之探針針頭7的研磨處理(探針研磨處理)方法。The probe test system control unit 5 controls each unit based on the probe test processing program 50. Next, the control unit 5 determines whether or not to interrupt the current processing to perform the polishing of the probe needle 7 in accordance with the result of the probe test, and performs the interrupt processing for polishing the probe needle 7 in accordance with the interrupt control processing program 51 as needed. Next, a polishing process (probe polishing process) of the probe needle 7 for the interrupt processing will be described with reference to Figs. 8 to 12 .

進行探針針頭7之探針研磨處理的情況主要可考慮2種狀況。第1狀況係當晶圓搬送手臂3支撐有未檢測晶圓W之狀態下在搬送室10內待機之時點來進行該探針研磨處理;第2狀況係於第1檢測部21處進行未檢測晶圓W與已完成檢測之晶圓W的交換後,馬上於第2檢測部21進行該探針研磨處理。首先,參考圖8、圖9來說明第1狀況。另外,說明第1狀況時,晶圓搬送手臂3所載置的未檢測晶圓係W1;檢測部21之晶圓挾具4所載置的已完成檢測之晶圓係W2;基板收納部60所載置的探針研磨晶圓係Wb。In the case where the probe polishing process of the probe needle 7 is performed, two types of conditions can be considered. In the first state, the probe polishing process is performed when the wafer transfer arm 3 supports the undetected wafer W while waiting in the transfer chamber 10, and the second state is not detected by the first detection unit 21. Immediately after the exchange of the wafer W with the wafer W that has been detected, the probe W is processed by the second detecting unit 21. First, the first situation will be described with reference to Figs. 8 and 9 . In addition, in the first state, the undetected wafer system W1 placed on the wafer transfer arm 3, the wafer system W2 on which the wafer cooker 4 of the detecting unit 21 is mounted, and the substrate storage unit 60; The mounted probe is ground wafer Wb.

首先,如圖8(a)所示,當晶圓搬送手臂3支撐有已完成預對位之未檢測晶圓W1而在搬送室10內待機之時點進行探針研磨處理的情況,係將晶圓搬送手臂3移動至能對基板收納部60進行存取的位置(箭頭1)。其次,如圖8(b)所示,將第1手臂本體35所支撐的未檢測晶圓W1保持於基板保持裝置70上,接著再藉由該第1手臂本體35來將載置於基板收納部60的探針研磨晶圓Wb取出(箭頭2)。接著,與普通之晶圓W相同地,藉由晶圓搬送手臂3的預對位機構40來對探針研磨晶圓Wb進行預對位,配合欲實施探針研磨處理的檢測部21來進行該探針研磨晶圓Wb之方向調整與中心位置定位。然後,將晶圓搬送手臂3移動至欲實施探針研磨處理的檢測部21之搬入出口23(參考圖3)前方(箭頭3)。First, as shown in FIG. 8(a), when the wafer transfer arm 3 supports the undetected wafer W1 that has completed the pre-alignment and is subjected to the probe polishing process at the time of waiting in the transfer chamber 10, the crystal is transferred. The circular transfer arm 3 is moved to a position (arrow 1) at which the substrate storage unit 60 can be accessed. Next, as shown in FIG. 8(b), the undetected wafer W1 supported by the first arm body 35 is held by the substrate holding device 70, and then placed on the substrate by the first arm body 35. The probe polishing wafer Wb of the portion 60 is taken out (arrow 2). Then, similarly to the normal wafer W, the probe polishing wafer Wb is pre-aligned by the pre-alignment mechanism 40 of the wafer transfer arm 3, and the detection unit 21 for performing the probe polishing process is performed. The probe grinds the direction adjustment and center position of the wafer Wb. Then, the wafer transfer arm 3 is moved to the front of the carry-in port 23 (refer to FIG. 3) of the detecting unit 21 to be subjected to the probe polishing process (arrow 3).

其次,如圖8(c)所示,從需要進行探針研磨處理的檢測部21之晶圓挾具4處,將已完成檢測之晶圓W2遞給晶圓搬送手臂3的第2手臂本體36而搬出,同時將第1手臂本體35所支撐的探針研磨晶圓Wb搬入至該晶圓挾具4(箭頭4)。接著於該檢測部21處,移動該晶圓挾具4並使得載置於晶圓挾具4上的探針研磨晶圓Wb與探針針頭7相接觸以進行該探針針頭7的探針研磨處理。另一方面,在進行該探針針頭7的探針研磨處理之期間,讓晶圓搬送手臂3移動到能對FOUP100進行存取的位置,並將已完成檢測的晶圓W2搬入至FOUP100內(箭頭5)。Next, as shown in FIG. 8(c), the wafer W2 that has been inspected is transferred from the wafer cooker 4 of the detecting unit 21 that needs to perform the probe polishing process to the second arm body of the wafer transfer arm 3. 36, while carrying out, the probe polishing wafer Wb supported by the first arm body 35 is carried into the wafer cooker 4 (arrow 4). Next, at the detecting portion 21, the wafer cooker 4 is moved and the probe polishing wafer Wb placed on the wafer cooker 4 is brought into contact with the probe needle 7 to perform the probe of the probe needle 7. Grinding treatment. On the other hand, during the probe polishing process of the probe needle 7, the wafer transfer arm 3 is moved to a position where the FOUP 100 can be accessed, and the wafer W2 that has been detected is carried into the FOUP 100 ( Arrow 5).

如圖9(a)所示,將晶圓W2搬入FOUP100後,不再從FOUP100內取出未檢測晶圓W而直接將晶圓搬送手臂3移動至能對基板收納部60進行存取的位置(箭頭6)。其次,藉由第1手臂本體35來接收保持於基板保持裝置70的晶圓W1(箭頭7),並如圖9(b)所示地將晶圓搬送手臂3移動至探針研磨處理中的檢測部21之搬入出口23(參考圖3)前方(箭頭8)。然後,待檢測部21完成探針研磨處理後,將載置於晶圓挾具4上的探針研磨晶圓Wb遞給第2手臂本體36而搬出,同時將第1手臂本體35所支撐的晶圓W1搬入至晶圓挾具4(箭頭9)。As shown in FIG. 9( a ), after the wafer W2 is carried into the FOUP 100 , the unprocessed wafer W is not taken out from the FOUP 100 , and the wafer transfer arm 3 is directly moved to a position where the substrate storage unit 60 can be accessed ( Arrow 6). Next, the wafer W1 held by the substrate holding device 70 is received by the first arm body 35 (arrow 7), and the wafer transfer arm 3 is moved to the probe polishing process as shown in FIG. 9(b). The detection unit 21 is moved in front of the inlet 23 (refer to FIG. 3) (arrow 8). After the probe portion 21 completes the probe polishing process, the probe polishing wafer Wb placed on the wafer cooker 4 is transferred to the second arm body 36 and carried out, and the first arm body 35 is supported. The wafer W1 is carried into the wafer cooker 4 (arrow 9).

然後,如圖9(c)所示,該檢測部21便針對載置於晶圓挾具4的晶圓W1開始進行探針試驗。接著,在進行該探針試驗之期間,讓晶圓搬送手臂3移動到能對基板收納部60進行存取的位置(箭頭10),並將探針研磨晶圓Wb搬入至基板收納部60(箭頭11)。藉此,便完成了作為該中斷處理所進行之探針研磨處理的一連串步驟,然後,根據探針試驗處理程式50來繼續進行該探針試驗。Then, as shown in FIG. 9(c), the detecting unit 21 starts the probe test on the wafer W1 placed on the wafer cooker 4. Then, during the probe test, the wafer transfer arm 3 is moved to a position where the substrate storage unit 60 can be accessed (arrow 10), and the probe polishing wafer Wb is carried into the substrate storage unit 60 ( Arrow 11). Thereby, a series of steps of the probe polishing process performed as the interrupt processing is completed, and then the probe test is continued based on the probe test processing program 50.

前述第1狀況在中斷探針試驗處理以進行探針研磨處理(中斷處理)時,能暫時地將晶圓搬送手臂3所支撐之已完成預對位的晶圓W1在保持於基板保持裝置70的情況下進行該探針研磨處理。接著,待完成探針研磨處理後,再從基板保持裝置70處接收該晶圓W1並搬入至檢測部21,由於該基板保持裝置70係能將晶圓W1的姿勢保持為自晶圓搬送手臂3處所接收時的狀態,因此藉由晶圓搬送手臂3從基板保持裝置70處取出的晶圓W1,其已完成之預對位仍為有效,故能無需進行預對位而直接搬入至檢測部21內。In the first state, when the probe test process is interrupted to perform the probe polishing process (interrupt process), the wafer W1 that has been pre-aligned by the wafer transfer arm 3 can be temporarily held in the substrate holding device 70. In the case of this, the probe polishing treatment is performed. Then, after the probe polishing process is completed, the wafer W1 is received from the substrate holding device 70 and carried into the detecting portion 21, and the substrate holding device 70 can maintain the posture of the wafer W1 as a self-propagating arm. Since the position of the three places is received, the wafer W1 taken out from the substrate holding device 70 by the wafer transfer arm 3 is still valid for the completed pre-alignment, so that it can be directly loaded into the detection without performing pre-alignment. In section 21.

其次,參考圖10至圖12來說明第2狀況。另外,說明第2狀況時:第1檢測部21b之晶圓挾具係4b;第2檢測部21c之晶圓挾具係4c;第3檢測部21d之晶圓挾具係4d;晶圓搬送手臂3所載置的已完成檢測之晶圓係W3;晶圓挾具4b所載置的未檢測晶圓係W4;晶圓挾具4c所載置的已完成檢測之晶圓係W5;晶圓挾具4d所載置的檢測中晶圓係W6;從FOUP100內搬送至晶圓挾具4d的晶圓係W7;從FOUP100內搬送至晶圓挾具4c的晶圓係W8;且係於第1檢測部21b處對完成探針試驗之晶圓W3與晶圓W4進行交換後,馬上於第2檢測部21c進行該探針研磨處理。Next, the second situation will be described with reference to Figs. 10 to 12 . In addition, in the second case, the wafer faucet system 4b of the first detecting unit 21b, the wafer faucet system 4c of the second detecting unit 21c, and the wafer faucet system 4d of the third detecting unit 21d; wafer transfer The wafer W3 of the completed inspection carried by the arm 3; the undetected wafer system W4 placed on the wafer cooker 4b; the wafer system W5 of the completed inspection carried by the wafer cooker 4c; The wafer W6 for inspection in the round cooker 4d; the wafer system W7 transported from the FOUP 100 to the wafer cooker 4d; and the wafer system W8 transported from the FOUP 100 to the wafer cooker 4c; The first detecting unit 21b exchanges the wafer W3 and the wafer W4 that have completed the probe test, and immediately performs the probe polishing process on the second detecting unit 21c.

在藉由晶圓搬送手臂3接收第1檢測部21b之完成檢測的晶圓W3,並將未檢測晶圓W4遞給晶圓挾具4b之時點,由控制部5決定對第2檢測部21c進行探針研磨處理時,首先,如圖10(a)所示,讓晶圓搬送手臂3移動至能對基板收納部60進行存取的位置(箭頭20),而非FOUP100處。其次,如圖10(b)所示,將第2手臂本體36所支撐的已完成檢測之晶圓W3保持於基板保持裝置70,同時藉由第1手臂本體35來將載置於基板收納部60的探針研磨晶圓Wb搬出(箭頭21)。When the wafer W3 that has been detected by the first detecting unit 21b is received by the wafer transfer arm 3 and the undetected wafer W4 is delivered to the wafer cooker 4b, the control unit 5 determines the second detecting unit 21c. When the probe polishing process is performed, first, as shown in FIG. 10(a), the wafer transfer arm 3 is moved to a position (arrow 20) where the substrate storage portion 60 can be accessed, instead of the FOUP 100. Next, as shown in FIG. 10(b), the wafer W3 that has been inspected and supported by the second arm body 36 is held by the substrate holding device 70, and is placed in the substrate housing portion by the first arm body 35. The probe polishing wafer Wb of 60 is carried out (arrow 21).

接著,與第1狀況相同地針對探針研磨晶圓Wb進行預對位,配合欲實施探針研磨處理的檢測部21c來進行探針研磨晶圓Wb之方向調整與中心位置定位。然後,如圖10(c)所示,讓晶圓搬送手臂3移動至欲實施探針研磨處理的檢測部21c之搬入出口23(參考圖3)前方(箭頭22)。接著,從需要進行探針研磨處理之檢測部21c的晶圓挾具4c處將已完成檢測的晶圓W5遞給晶圓搬送手臂3的第2手臂本體36而搬出,同時將第1手臂本體35所支撐的探針研磨晶圓Wb搬入至晶圓挾具4c(箭頭23)。然後,於檢測部21c中,移動晶圓挾具4c而使得載置於晶圓挾具4c的探針研磨晶圓Wb與探針針頭7相接觸以進行探針針頭7的探針研磨處理。Then, in the same manner as in the first case, the probe polishing wafer Wb is pre-aligned, and the direction of the probe polishing wafer Wb and the center position positioning are performed in association with the detecting portion 21c to be subjected to the probe polishing process. Then, as shown in FIG. 10(c), the wafer transfer arm 3 is moved to the front of the carry-in port 23 (see FIG. 3) of the detecting portion 21c to be subjected to the probe polishing process (arrow 22). Next, the wafer W5 that has been detected is transferred from the wafer cooker 4c of the detecting unit 21c that needs to perform the probe polishing process to the second arm body 36 of the wafer transfer arm 3, and the first arm body is carried out. The probe-supported wafer Wb supported by 35 is carried into the wafer cooker 4c (arrow 23). Then, in the detecting unit 21c, the wafer cooker 4c is moved to bring the probe polishing wafer Wb placed on the wafer cooker 4c into contact with the probe needle 7 to perform probe polishing processing of the probe needle 7.

另一方面,當檢測部21c針對探針針頭7進行探針研磨處理之期間,如圖11(a)所示,將晶圓搬送手臂3移動至能對FOUP100進行存取的位置(箭頭24),並將第2手臂本體36支撐的晶圓W5搬入FOUP100,同時從FOUP100處將晶圓W7遞給第1手臂本體35而搬出(箭頭25)。其次,針對晶圓W7進行預對位,在配合檢測部21d來進行晶圓W7之方向調整與中心位置定位後,如圖11(b)所示,將晶圓搬送手臂3移動至檢測部21d的搬入出口23(參考圖3)前方(箭頭26)。接著,從檢測部21d之晶圓挾具4d處將已完成檢測的晶圓W6遞給第2手臂本體36而搬出,同時將第1手臂本體35所支撐的晶圓W7搬入至晶圓挾具4d(箭頭27)。然後該檢測部21d便針對晶圓W7開始進行探針試驗。On the other hand, when the detecting unit 21c performs the probe polishing process on the probe needle 7, as shown in FIG. 11(a), the wafer transfer arm 3 is moved to a position where the FOUP 100 can be accessed (arrow 24). The wafer W5 supported by the second arm body 36 is carried into the FOUP 100, and the wafer W7 is transferred from the FOUP 100 to the first arm body 35 to be carried out (arrow 25). Next, the wafer W7 is pre-aligned, and after the direction adjustment and the center position of the wafer W7 are performed by the matching detecting portion 21d, the wafer transfer arm 3 is moved to the detecting portion 21d as shown in Fig. 11(b). Move in the front of the exit 23 (refer to Figure 3) (arrow 26). Then, the wafer W6 that has been detected is transferred from the wafer cooker 4d of the detecting unit 21d to the second arm body 36, and the wafer W7 supported by the first arm body 35 is carried into the wafer cookware. 4d (arrow 27). Then, the detecting unit 21d starts the probe test for the wafer W7.

另一方面,當檢測部21d針對晶圓W7進行探針試驗之期間,如圖11(c)所示,係將晶圓搬送手臂3移動至能對FOUP100進行存取的位置(箭頭28),並將第2手臂本體36所支撐的晶圓W6搬入FOUP100,同時藉由第1手臂本體35從FOUP100內將晶圓W8搬出(箭頭29)。接著,針對晶圓W8進行預對位,在配合檢測部21c進行晶圓W8之方向調整與中心位置定位後,如圖12(a)所示,將晶圓搬送手臂3移動至已正在實施探針研磨處理的檢測部21c之搬入出口23(參考圖3)前方(箭頭30)。接著,待檢測部21c之探針研磨處理完成後,從晶圓挾具4c將探針研磨晶圓Wb遞給第2手臂本體36而搬出,同時將第1手臂本體35所支撐的晶圓W8搬入至晶圓挾具4c(箭頭31)。然後,該檢測部21c便針對晶圓W8開始進行探針試驗。On the other hand, when the detecting unit 21d performs the probe test on the wafer W7, as shown in FIG. 11(c), the wafer transfer arm 3 is moved to a position (arrow 28) where the FOUP 100 can be accessed. The wafer W6 supported by the second arm body 36 is carried into the FOUP 100, and the wafer W8 is carried out from the FOUP 100 by the first arm body 35 (arrow 29). Next, the wafer W8 is pre-aligned, and after the alignment detecting unit 21c performs the direction adjustment and the center position positioning of the wafer W8, as shown in FIG. 12(a), the wafer transfer arm 3 is moved to the stage. The detection portion 21c of the needle polishing process is carried in front of the outlet 23 (see FIG. 3) (arrow 30). After the probe polishing process of the to-be-detected portion 21c is completed, the probe polishing wafer Wb is transferred from the wafer cooker 4c to the second arm body 36, and the wafer W8 supported by the first arm body 35 is carried out. Move into the wafer cooker 4c (arrow 31). Then, the detecting unit 21c starts the probe test for the wafer W8.

然後,當檢測部21c針對晶圓W7進行探針試驗之期間,如圖12(b)所示,係將晶圓搬送手臂3移動至能對基板收納部60進行存取的位置(箭頭32),並將第2手臂36所支撐的探針研磨晶圓Wb搬入至基板收納部60,同時藉由第1手臂本體35來將保持於基板保持裝置70的已完成檢測之晶圓W3取出(箭頭33)。然後將晶圓W3搬入至FOUP100(箭頭34)。藉此,便完成了中斷當下處理所進行之第2狀況的探針研磨處理之一連串步驟,之後根據探針試驗處理程式50來繼續進行探針試驗。Then, when the detecting unit 21c performs the probe test on the wafer W7, as shown in FIG. 12(b), the wafer transfer arm 3 is moved to a position where the substrate storage unit 60 can be accessed (arrow 32). The probe polishing wafer Wb supported by the second arm 36 is carried into the substrate housing portion 60, and the wafer W3 that has been detected and held by the substrate holding device 70 is taken out by the first arm body 35 (arrow 33). The wafer W3 is then carried into the FOUP 100 (arrow 34). Thereby, a series of steps of the probe polishing process for interrupting the second state performed in the current process is completed, and then the probe test is continued in accordance with the probe test processing program 50.

前述第2狀況中,中斷探針試驗處理以進行探針研磨處理(中斷處理)時,並非將已檢測完成的晶圓W3放回FOUP100,而係將其暫時地保持在設置於基板收納部60上方的基板保持裝置70處以開始進行該探針研磨處理。因此,相較於先將已完成檢測的晶圓W3搬入FOUP100再把探針研磨晶圓Wb搬出之情況,能縮短從保持該晶圓W3到將探針研磨晶圓Wb搬出為止的時間。再者,將晶圓W3搬回FOUP100再進行探針研磨處理之情況,相對於需要如該晶圓搬送手臂3在未支撐有任何晶圓W的狀態下移動般之無實效的步驟,本實施形態之晶圓搬送手臂3係在經常支撐有晶圓W的狀態,故可望能藉由減少無實效的步驟以提高其作業性。In the second state, when the probe test process is interrupted to perform the probe polishing process (interrupt process), the wafer W3 that has been detected is not returned to the FOUP 100, and is temporarily held in the substrate storage portion 60. The upper substrate holding device 70 is used to start the probe grinding process. Therefore, the time from the holding of the wafer W3 to the removal of the probe polishing wafer Wb can be shortened compared to when the wafer W3 that has been inspected is first carried into the FOUP 100 and the probe polishing wafer Wb is carried out. In addition, when the wafer W3 is moved back to the FOUP 100 and the probe polishing process is performed, the process is not effective as if the wafer transfer arm 3 is not supported by any wafer W. Since the wafer transfer arm 3 of the form is in a state in which the wafer W is often supported, it is expected that the workability can be improved by reducing the number of steps that are not effective.

於前述第1及第2狀況下,因該中斷命令而進行探針研磨處理之本實施形態的探針裝置中,當檢測部21內載置有已完成檢測之晶圓W的狀態下發生需要中斷當下處理以使用探針研磨晶圓Wb來對該檢測部21進行維護作業(探針研磨處理)時,係將第1手臂本體35所支撐的已完成預對位之未檢測晶圓W暫時地遞給具備吸著部73的基板保持裝置70。因此,能將該未檢測晶圓W保持於從晶圓搬送手臂3處接受時的姿勢(晶圓中心位置及方向),故無需再次進行預對位而可直接搬入至檢測部21。因而可縮短該檢測部21的待機時間,並抑制產量的下降。In the probe device of the embodiment in which the probe polishing process is performed by the interrupt command in the first and second cases, the probe unit W is placed in the state where the wafer W that has been detected is placed. When the current processing (probe polishing process) is performed on the detecting unit 21 by using the probe polishing wafer Wb, the unprocessed wafer W that has been completed by the first arm body 35 is temporarily suspended. The substrate holding device 70 having the absorbing portion 73 is delivered to the ground. Therefore, the undetected wafer W can be held in the posture (wafer center position and direction) when it is received from the wafer transfer arm 3, so that it is not necessary to perform the pre-alignment again and can be directly carried into the detection unit 21. Therefore, the standby time of the detecting portion 21 can be shortened, and the decrease in the yield can be suppressed.

又,基板保持裝置70只要是能保持並維持1片晶圓W之姿勢者即可,故可縮小該基板保持裝置70的結構,並可將基板保持裝置70設置於該搬送室10等內的多餘空間處。因此,相較於設置該探針研磨處理專用的晶圓挾具等情況,能抑制該裝置的大型化。In addition, the substrate holding device 70 can be configured to hold and maintain one wafer W. Therefore, the structure of the substrate holding device 70 can be reduced, and the substrate holding device 70 can be placed in the transfer chamber 10 or the like. Extra space. Therefore, it is possible to suppress an increase in size of the apparatus compared to the case of providing a wafer cooker dedicated to the probe polishing process.

(第2實施形態)參考圖13至圖16來說明有關本發明第2實施形態的探針裝置。第2實施形態之探針裝置中,除了該基板保持裝置170的結構之外均與第1實施形態相同,故針對與第1實施形態相同的部分或相對應部分則賦予相同的符號以進行說明。第1實施形態中,基板保持裝置70僅能吸著並保持晶圓W,但本實施形態之基板保持裝置170能依需要針對其所保持的晶圓W來進行預對位。(Second Embodiment) A probe device according to a second embodiment of the present invention will be described with reference to Figs. 13 to 16 . The probe device of the second embodiment is the same as that of the first embodiment except for the configuration of the substrate holding device 170. Therefore, the same portions or corresponding portions as those of the first embodiment are denoted by the same reference numerals for explanation. . In the first embodiment, the substrate holding device 70 can only suck and hold the wafer W. However, the substrate holding device 170 of the present embodiment can perform pre-alignment on the wafer W held therein as needed.

如圖13、圖14所示,本實施形態係於基板收納部60之基台61的上方面處設置一設置部168。該設置部168具有平板169,其係在基板收納部60的上方區域形成一水平面,且基板保持裝置170係設置於該平板169上。另外,基板收納部60與平板169之間的距離係設定為能將載置於該基板收納部60之最上層棚架之探針研磨晶圓Wb取出的距離。As shown in FIGS. 13 and 14, in the present embodiment, an installation portion 168 is provided on the upper side of the base 61 of the substrate housing portion 60. The installation portion 168 has a flat plate 169 which is formed in a horizontal plane in a region above the substrate housing portion 60, and the substrate holding device 170 is disposed on the flat plate 169. Further, the distance between the substrate housing portion 60 and the flat plate 169 is set to a distance at which the probe polishing wafer Wb placed on the uppermost scaffolding of the substrate housing portion 60 can be taken out.

該設置部168係設置有基板保持裝置170之挾具部171、感測器跨樑172、發光部175等,且光感測器173係安裝於該感測器跨樑172上。挾具部171係具有旋轉功能以及吸著(真空吸著)載置於其上之晶圓W的功能,並具有作為吸著保持該晶圓W而旋轉之迴轉台的功能。接著,該挾具部171係設置於平板169約略中央處,且當手臂本體35、36朝向基板保持裝置170前進時,係相對地進入該手臂本體35(36)的缺口部55、56內而不會與手臂本體35、36產生干擾的位置處。The setting portion 168 is provided with a cooker portion 171 of the substrate holding device 170, a sensor cross member 172, a light emitting portion 175, and the like, and the photo sensor 173 is attached to the sensor cross member 172. The cooker unit 171 has a function of rotating and absorbing (vacuum absorbing) the wafer W placed thereon, and has a function as a turntable that oscillates and holds the wafer W. Next, the cookware portion 171 is disposed at approximately the center of the flat plate 169, and when the arm bodies 35, 36 are advanced toward the substrate holding device 170, they are relatively entered into the notch portions 55, 56 of the arm body 35 (36). It does not interfere with the arm bodies 35, 36.

感測器跨樑172係設置於該設置部168的後方一側處,其上部係安裝有光感測器173且相對該平板169呈水平狀。又,發光部175係設置在被挾具部171所保持之晶圓W周緣部的下方位置處,且從下方將光線照射至包含其上方之晶圓W的周緣部(端部)之區域,再藉由該光感測器173來檢測出穿透晶圓W的光線。因此,安裝有光感測器173的感測器跨樑172便形成了能將該光感測器173固定於發光部175上方且較挾具部171所保持之晶圓W更高水平位置的結構。The sensor cross member 172 is disposed at a rear side of the setting portion 168, and a photo sensor 173 is mounted on the upper portion thereof and is horizontal with respect to the flat plate 169. Further, the light-emitting portion 175 is provided at a position below the peripheral edge portion of the wafer W held by the cooker portion 171, and irradiates light from below to a region including the peripheral portion (end portion) of the wafer W above it. The light passing through the wafer W is detected by the photo sensor 173. Therefore, the sensor cross member 172 mounted with the photo sensor 173 is formed to be able to fix the photo sensor 173 above the light emitting portion 175 and at a higher horizontal position than the wafer W held by the cooker portion 171. structure.

然後,該基板保持裝置170可藉由讓該晶圓搬送手臂3相對圖7所示第1實施形態的吸著部73實施進退移動及昇降動作,來將晶圓W遞給挾具部171,並吸著而保持該遞送而來的晶圓W。再者,具備有光感測器173與發光部175,同時具有作為旋轉該挾具部171之迴轉台的功能,故與預對位機構40相同,能針對該晶圓W進行預對位。Then, the substrate holding device 170 can transfer the wafer W to the cooker portion 171 by moving the wafer transfer arm 3 forward and backward with respect to the absorbing portion 73 of the first embodiment shown in FIG. The wafer W is delivered while being sucked. Further, since the photo sensor 173 and the light-emitting portion 175 are provided and have a function as a turntable for rotating the cooker portion 171, the wafer W can be pre-aligned similarly to the pre-alignment mechanism 40.

具有前述基板保持裝置170之本實施形態的探針裝置係可針對基板保持裝置170所保持的晶圓W進行預對位,因此在進行探針研磨處理時,例如,將探針研磨晶圓Wb搬入至第1檢測部21的晶圓挾具4時,且於第2檢測部21處的探針試驗完成之情況,能針對基板保持裝置170所保持的晶圓W進行預對位,而配合第2檢測部21來進行晶圓W方向調整與中心位置定位,並將該晶圓W搬入至第2檢測部21。The probe device of the present embodiment having the substrate holding device 170 can perform pre-alignment with respect to the wafer W held by the substrate holding device 170. Therefore, when the probe polishing process is performed, for example, the probe is polished to the wafer Wb. When the wafer cooker 4 of the first detecting unit 21 is carried in, and the probe test at the second detecting unit 21 is completed, the wafer W held by the substrate holding device 170 can be pre-aligned and matched. The second detecting unit 21 performs wafer W direction adjustment and center position positioning, and carries the wafer W to the second detecting unit 21.

其次,參考圖15、圖16來說明有關該探針研磨處理的方法。另外,該說明中,第1檢測部21b的晶圓挾具係4b;第2檢測部21c的晶圓挾具係4c;基板保持裝置170所保持的未檢測晶圓係W10;晶圓搬送手臂3所支撐的已完成檢測之晶圓係W11;晶圓挾具4c所載置的已完成檢測之晶圓係W12;從FOUP100搬送至晶圓挾具4b的晶圓係W13。其中,從檢測部21b之晶圓挾具4b處將已完成檢測之晶圓W11搬出而同時將探針研磨晶圓Wb搬入至晶圓挾具4b以開始進行探針研磨處理時,於第2檢測部21c處所進行的探針試驗係已完成(參考圖8(c))。Next, a method of the probe polishing process will be described with reference to Figs. 15 and 16 . In the description, the wafer faucet system 4b of the first detecting unit 21b, the wafer faucet system 4c of the second detecting unit 21c, and the undetected wafer system W10 held by the substrate holding device 170; the wafer transfer arm 3 supported wafers W11 that have been tested; wafers W12 that have been tested on the wafer cooker 4c; wafers W13 that have been transported from the FOUP 100 to the wafer cookers 4b. When the wafer W11 that has been detected is carried out from the wafer cooker 4b of the detecting unit 21b and the probe polishing wafer Wb is carried into the wafer cooker 4b to start the probe polishing process, the second is performed. The probe test performed at the detecting portion 21c is completed (refer to Fig. 8(c)).

首先,如圖15(a)所示,將晶圓搬送手臂3移動至能對基板收納部60進行存取的位置(箭頭41)。此時,基板保持裝置170係對其所保持的晶圓W10進行預對位,來對基板保持裝置170所保持之未檢測晶圓W10進行方向調整與中心位置的定位。其次,藉由第1手臂本體35從基板保持裝置170處取出晶圓W10,同時將第2手臂本體36所支撐的已完成檢測之晶圓W11保持於基板保持裝置170上(箭頭42)。然後,如圖15(b)所示,將晶圓搬送手臂3移動至檢測部21c之搬入出口23(參考圖3)前方(箭頭43),並藉由晶圓搬送手臂3之第2手臂本體36從檢測部21c之晶圓挾具4c處將已完成檢測之晶圓W12搬出,同時將第1手臂本體35所支撐的探針研磨晶圓Wb搬入至晶圓挾具4c(箭頭44)。接著,於檢測部21c中,移動晶圓挾具4c並對載置於晶圓挾具4c上的晶圓W10進行探針試驗。First, as shown in FIG. 15(a), the wafer transfer arm 3 is moved to a position (arrow 41) where the substrate storage unit 60 can be accessed. At this time, the substrate holding device 170 pre-aligns the wafer W10 held by the substrate holding device 170 to perform direction adjustment and center position positioning on the undetected wafer W10 held by the substrate holding device 170. Next, the wafer W10 is taken out from the substrate holding device 170 by the first arm body 35, and the completed wafer W11 supported by the second arm body 36 is held by the substrate holding device 170 (arrow 42). Then, as shown in FIG. 15(b), the wafer transfer arm 3 is moved to the front of the loading/unloading port 23 (refer to FIG. 3) of the detecting unit 21c (arrow 43), and the second arm body of the arm 3 is transported by the wafer. The wafer W12 that has been inspected is carried out from the wafer cooker 4c of the detecting unit 21c, and the probe polishing wafer Wb supported by the first arm body 35 is carried into the wafer cooker 4c (arrow 44). Next, in the detecting unit 21c, the wafer cooker 4c is moved and the wafer W10 placed on the wafer cooker 4c is subjected to a probe test.

另一方面,當檢測部21c對晶圓W10進行探針試驗的期間,如圖15(c)所示,將晶圓搬送手臂3移動至能對FOUP100進行存取的位置(箭頭45),並將第2手臂本體36所支撐的晶圓W12搬入至FOUP100,同時藉由第1手臂本體35從FOUP100內將晶圓W13搬出(箭頭46)。其次,對該晶圓W13進行預對位,在配合檢測部21b來進行晶圓W13方向調整與中心位置的定位後,如圖16(a)所示,將晶圓搬送手臂3移動至正在進行探針研磨處理之檢測部21b的搬入出口23(參考圖3)前方(箭頭47)。接著,待檢測部21b之探針研磨處理完成後,從晶圓挾具4b將探針研磨晶圓Wb遞給第2手臂本體36而搬出,同時將第1手臂本體35所支撐的晶圓W13搬入至晶圓挾具4b(箭頭48)。然後,於檢測部21b處對該晶圓W8開始進行探針試驗。On the other hand, when the detecting unit 21c performs the probe test on the wafer W10, as shown in FIG. 15(c), the wafer transfer arm 3 is moved to a position (arrow 45) where the FOUP 100 can be accessed, and The wafer W12 supported by the second arm body 36 is carried into the FOUP 100, and the wafer W13 is carried out from the FOUP 100 by the first arm body 35 (arrow 46). Next, the wafer W13 is pre-aligned, and after the wafer W13 direction adjustment and the center position are positioned by the matching detecting portion 21b, the wafer transfer arm 3 is moved to progress as shown in FIG. 16(a). The detection portion 21b of the probe polishing process is carried forward (see FIG. 3) in front of the loading port 23 (arrow 47). After the probe polishing process of the to-be-detected portion 21b is completed, the probe polishing wafer Wb is transferred from the wafer cooker 4b to the second arm body 36, and the wafer W13 supported by the first arm body 35 is carried out. Move into wafer cooker 4b (arrow 48). Then, the probe test is started on the wafer W8 at the detecting portion 21b.

然後,如圖16(b)所示,當檢測部21b對晶圓W13進行探針試驗的期間,將晶圓搬送手臂3移動至能對基板收納部60進行存取的位置(箭頭49),並將第2手臂36所支撐的探針研磨晶圓Wb搬入至基板收納部60,同時藉由第1手臂本體35來將基板保持裝置170所保持的已完成檢測之晶圓W11取出(箭頭50)。然後,如圖16(c)所示,將晶圓搬送手臂3移動至能對FOUP100進行存取的位置(箭頭51),且將該晶圓W11搬入FOUP100(箭頭52)。藉此,便完成了該探針研磨處理的一串步驟,然後根據探針試驗處理程式50來繼續進行探針試驗。Then, as shown in FIG. 16(b), while the detecting unit 21b performs the probe test on the wafer W13, the wafer transfer arm 3 is moved to a position where the substrate storage unit 60 can be accessed (arrow 49). The probe polishing wafer Wb supported by the second arm 36 is carried into the substrate housing portion 60, and the completed wafer W11 held by the substrate holding device 170 is taken out by the first arm body 35 (arrow 50) ). Then, as shown in FIG. 16(c), the wafer transfer arm 3 is moved to a position where the FOUP 100 can be accessed (arrow 51), and the wafer W11 is carried into the FOUP 100 (arrow 52). Thereby, a series of steps of the probe grinding process is completed, and then the probe test is continued according to the probe test processing program 50.

前述本實施形態之探針裝置中係藉由具備該基板保持裝置170,而與第1實施形態同樣地能將未檢測晶圓W遞給晶圓搬送手臂3並維持其姿勢(晶圓中心位置及方向),故無需再次進行預對位,而可直接搬入至檢測部21。因此能縮短檢測部21的待機時間,並抑制產量的下降。再者,基板保持裝置170能對其所保持的晶圓W進行預對位,故能對其所保持的晶圓W進行方向改變與中心位置的定位,以配合與原先該晶圓搬送手臂3待機時所搬入之檢測部21不相同的另一檢測部21,讓晶圓W維持其姿勢地而搬入另一檢測部21。藉此,可縮短因探針研磨處理所造成其他檢測部的待機時間,而更能抑制產量的下降。In the probe device of the present embodiment, the substrate holding device 170 is provided, and the undetected wafer W can be transferred to the wafer transfer arm 3 and maintained in the same manner as in the first embodiment (wafer center position) Since the direction is the same, it is not necessary to perform the pre-alignment again, and it can be directly carried into the detecting unit 21. Therefore, the standby time of the detecting unit 21 can be shortened, and the decrease in the yield can be suppressed. Moreover, the substrate holding device 170 can pre-align the wafer W held by the substrate holding device 170, so that the wafer W held by the substrate can be directionally changed and positioned at the center position to cooperate with the original wafer transfer arm 3 The other detecting unit 21, which is different from the detecting unit 21 carried in during standby, allows the wafer W to be moved to the other detecting unit 21 while maintaining its posture. Thereby, the standby time of the other detecting sections caused by the probe polishing process can be shortened, and the decrease in the yield can be suppressed more.

另外,本實施形態中,基板收納部60係收納有用作維護用基板的探針研磨晶圓Wb,但本發明實施形態,亦可收納有用作量測關於各複數個檢測部之探針試驗誤差的相關晶圓之維護用基板。Further, in the present embodiment, the substrate storage unit 60 houses the probe polishing wafer Wb serving as a maintenance substrate. However, in the embodiment of the present invention, the probe test error for measuring the plurality of detection portions may be accommodated. A substrate for maintenance of related wafers.

又,本發明實施形態之預對位機構40並非限定於需搭載在晶圓搬送手臂3處,亦可設置於搬送室10內之晶圓搬送手臂3的移動區域內(能進行存取的區域內),但因為每次進行預對位時,需將晶圓搬送手臂3移動至該預對位機構處且必需在預對位作業台與手臂3之間進行該晶圓W的傳遞,故以本範例之結構為較佳之方法。又,將預對位機構40設置於搬送室10內的位置例可列舉有,例如在圖2中之搬送室10Y方向的中央部處,而不會妨礙該晶圓搬送手臂3搬送已完成檢測之晶圓W的位置或載入埠11(12)下方位置等。Further, the pre-alignment mechanism 40 according to the embodiment of the present invention is not limited to being mounted on the wafer transfer arm 3, and may be provided in the movement area of the wafer transfer arm 3 in the transfer chamber 10 (accessible area) Internal), but each time the pre-alignment is performed, the wafer transfer arm 3 needs to be moved to the pre-alignment mechanism and the transfer of the wafer W must be performed between the pre-alignment workbench and the arm 3. The structure of this example is preferred. Further, examples of the position in which the pre-alignment mechanism 40 is disposed in the transfer chamber 10 may be, for example, a central portion in the direction of the transfer chamber 10Y in FIG. 2, and the wafer transfer arm 3 is not prevented from being transported. The position of the wafer W or the position below the load 埠 11 (12) and the like.

又,本實施形態之晶圓搬送手臂3具備2具手臂本體35、36,但本發明之實施形態,例如基板搬送機構亦可具備有3具基板支撐組件。在具備3具基板支撐組件之情況,該3具中的2具基板支撐組件係經常地支撐有晶圓,因此在進行探針研磨處理時,則需將其中1具基板支撐組件所支撐的晶圓卸下,但藉由具備本實施形態的各基板保持裝置,無需回到搬運器處便能卸下該晶圓,故可縮短檢測部21的待機時間並抑制產量的下降。Further, the wafer transfer arm 3 of the present embodiment includes two arm bodies 35 and 36. However, in the embodiment of the present invention, for example, the substrate transfer mechanism may include three substrate support members. In the case of having three substrate supporting components, two of the three substrate supporting components are often supported by the wafer, so when performing the probe grinding process, the crystal supported by one of the substrate supporting components is required. Since the circular substrate is removed, the substrate holding device of the present embodiment can remove the wafer without returning to the carrier. Therefore, the standby time of the detecting portion 21 can be shortened and the decrease in yield can be suppressed.

又,本實施形態之基板保持裝置70、170雖係設置於該基板收納部60的上方區域,但本發明之實施形態並非限定於此,例如只要是鄰接該基板收納部的區域,亦可設置於下方區域抑或是左右任一側的區域處。Further, although the substrate holding devices 70 and 170 of the present embodiment are provided in the upper region of the substrate housing portion 60, the embodiment of the present invention is not limited thereto, and may be provided as long as it is adjacent to the substrate housing portion. In the lower area or in the area on either side.

1...裝載部1. . . Loading department

2...探針裝置本體2. . . Probe device body

3...晶圓搬送手臂3. . . Wafer transfer arm

4、4b、4c、4d...晶圓挾具4, 4b, 4c, 4d. . . Wafer cookware

5...控制部5. . . Control department

6...探針卡6. . . Probe card

7...探針針頭7. . . Probe needle

8...下側攝影部8. . . Lower side photography department

9...上側攝影部9. . . Upper photography department

10...搬送室10. . . Transfer room

11...第1載入埠11. . . 1st load埠

12...第2載入埠12. . . 2nd load埠

13、14...箱體13, 14. . . Box

15、16...搬入口15,16. . . Move in

21...檢測部twenty one. . . Detection department

22...框體twenty two. . . framework

23...搬入出口twenty three. . . Move into the exit

24...台座單元twenty four. . . Pedestal unit

25...上板25. . . On board

30...搬送基台30. . . Transfer abutment

31...迴轉部31. . . Turning part

32...基台昇降部32. . . Abutment lifting department

33...基台移動部33. . . Abutment movement department

35...第1手臂本體35. . . First arm body

36...第2手臂本體36. . . Second arm body

37...導軌37. . . guide

38、39...手臂導件38, 39. . . Arm guide

40...預對位機構40. . . Pre-alignment mechanism

41...挾具部41. . . Cookware department

42...感測器跨樑42. . . Sensor beam

43...光感測器43. . . Light sensor

44...光通過部44. . . Light passage

50‧‧‧探針試驗處理程式50‧‧‧Probe test processing program

51‧‧‧中斷控制處理程式51‧‧‧Interrupt Control Processing Program

55、56‧‧‧缺口部55, 56‧‧ ‧ gap

60‧‧‧基板收納部60‧‧‧Substrate storage unit

61‧‧‧基台61‧‧‧Abutment

62、63、64‧‧‧載匣組件62, 63, 64‧ ‧ ‧ components

65‧‧‧爪部65‧‧‧ claws

70‧‧‧基板保持裝置70‧‧‧Substrate holder

71‧‧‧支撐部71‧‧‧Support

72‧‧‧腕部72‧‧‧ wrist

73‧‧‧吸著部73‧‧‧Sucking Department

74‧‧‧真空吸著孔74‧‧‧Vacuum suction hole

75‧‧‧凹部75‧‧‧ recess

100‧‧‧FOUP100‧‧‧FOUP

168‧‧‧設置部168‧‧‧Setting Department

169‧‧‧平板169‧‧‧ tablet

170‧‧‧基板保持裝置170‧‧‧Substrate holder

171‧‧‧挾具部171‧‧‧Facilities Department

172‧‧‧感測器跨樑172‧‧‧Sensor beam

173‧‧‧光感測器173‧‧‧Light sensor

175‧‧‧發光部175‧‧‧Lighting Department

W‧‧‧晶圓W‧‧‧ wafer

Wb‧‧‧探針研磨晶圓Wb‧‧‧Probe Grinding Wafer

圖1係本實施形態之探針裝置的概略立體圖。Fig. 1 is a schematic perspective view of a probe device of the embodiment.

圖2係本實施形態之探針裝置的概略俯視圖。Fig. 2 is a schematic plan view of the probe device of the embodiment.

圖3(a)(b)係本實施形態之探針裝置的概略側視圖。3(a) and 3(b) are schematic side views of the probe device of the embodiment.

圖4係本實施形態之晶圓搬送手臂的概略立體圖。Fig. 4 is a schematic perspective view of the wafer transfer arm of the embodiment.

圖5係本實施形態之基板保持裝置的概略立體圖。Fig. 5 is a schematic perspective view of the substrate holding device of the embodiment.

圖6係本實施形態之基板保持裝置的概略側視圖。Fig. 6 is a schematic side view of the substrate holding device of the embodiment.

圖7(a)(b)(c)係用以說明本實施形態之基板保持裝置的機能之說明圖。7(a), 7(b) and 7(c) are explanatory views for explaining the function of the substrate holding device of the embodiment.

圖8(a)(b)(c)係用以說明本實施形態之探針研磨處理的第1狀況之第1說明圖。8(a), 8(b) and 8(c) are first explanatory views for explaining the first state of the probe polishing process of the embodiment.

圖9(a)(b)(c)係用以說明本實施形態之探針研磨處理的第1狀況之第2說明圖。Fig. 9 (a), (b) and (c) are second explanatory views for explaining the first state of the probe polishing process of the embodiment.

圖10(a)(b)(c)係用以說明本實施形態之探針研磨處理的第2狀況之第1說明圖。Figs. 10(a), (b) and (c) are first explanatory views for explaining a second state of the probe polishing process of the embodiment.

圖11(a)(b)(c)係用以說明本實施形態之探針研磨處理的第2狀況之第2說明圖。Fig. 11 (a), (b) and (c) are second explanatory views for explaining the second state of the probe polishing process of the embodiment.

圖12(a)(b)係用以說明本實施形態之探針研磨處理的第2狀況之第3說明圖。Fig. 12 (a) and (b) are third explanatory views for explaining the second state of the probe polishing process of the embodiment.

圖13係本發明另一實施形態之基板保持裝置的概略立體圖。Figure 13 is a schematic perspective view of a substrate holding device according to another embodiment of the present invention.

圖14係本發明另一實施形態之基板保持裝置的概略側視圖。Figure 14 is a schematic side view of a substrate holding device according to another embodiment of the present invention.

圖15(a)(b)(c)係用以說明其他實施形態之探針研磨處理的第1說明圖。15(a), (b) and (c) are first explanatory views for explaining the probe polishing process of another embodiment.

圖16(a)(b)(c)係用以說明其他實施形態之探針研磨處理的第2說明圖。16(a), (b) and (c) are second explanatory views for explaining the probe polishing process of another embodiment.

35...第1手臂本體35. . . First arm body

36...第2手臂本體36. . . Second arm body

55、56...缺口部55, 56. . . Notch

61...基台61. . . Abutment

62、63、64...載匣組件62, 63, 64. . . Loaded component

65...爪部65. . . Claw

70...基板保持裝置70. . . Substrate holding device

71...支撐部71. . . Support

72...腕部72. . . Wrist

73...吸著部73. . . Sucking department

74...真空吸著孔74. . . Vacuum suction hole

75...凹部75. . . Concave

W...晶圓W. . . Wafer

Claims (6)

一種探針裝置,係使得載置於檢測部的載置台之被檢測對象之基板的電極片與探針卡的探針接觸以測量該基板之被檢測部的電氣特性,其特徵在於具備:載入埠,係用以載置收納有複數個基板的搬送容器;基板搬送機構,係於該載入埠所載置的該搬送容器與檢測部的載置台之間進行該基板的遞送,且具有互相獨立並可自由進退的複數個基板支撐組件,當其支撐著未檢測之該基板而待機時,會有一個清空的該基板支撐組件;搬送室,係連接至該載入埠與該檢測部,並能讓該基板搬送機構於其內部移動;預對位機構,係設置於該搬送室內,具有能固定基板並旋轉的迴轉台以及檢測出該迴轉台上之基板周緣的周緣檢知部,以針對自該搬送容器中取出的基板進行方向與中心部的定位;基板收納部,係設置於該搬送室內並收納有用以進行該檢測部之維護作業的維護用基板;基板保持裝置,係設置於該搬送室內並具有能從該基板搬送機構處接收該基板且進行吸著保持之吸著機構;以及控制部,係控制該基板搬送機構,當該檢測部之載置台處載置有基板時且發生了需中斷當下處理以進行該檢測部維護作業之情況,能將該基板支撐組件所支撐的該基板保持於該基板保持裝置,同時藉由該基板支撐組件來將該基板收納部內的該維護用基板取出而與該載置台上的基板進行交換。A probe device that contacts an electrode sheet of a substrate to be detected placed on a mounting table of a detecting portion with a probe of a probe card to measure electrical characteristics of a detected portion of the substrate, and is characterized in that: The loading container is configured to carry a transfer container in which a plurality of substrates are housed, and the substrate transfer mechanism performs the transfer of the substrate between the transfer container and the mounting table of the detecting unit mounted on the loading cassette. a plurality of substrate supporting components independent of each other and freely advancing and retracting, when it supports the undetected substrate and stands by, there is an empty substrate supporting component; the transfer chamber is connected to the loading port and the detecting portion And the substrate transfer mechanism is movable inside; the pre-alignment mechanism is disposed in the transfer chamber, and has a turntable capable of fixing the substrate and rotating, and a peripheral detecting unit that detects a peripheral edge of the substrate on the turntable. Positioning the direction and the center portion of the substrate taken out from the transfer container; the substrate storage portion is provided in the transfer chamber and stored for maintenance work of the detection portion a substrate for maintenance; a substrate holding device provided in the transfer chamber and having a absorbing mechanism capable of receiving the substrate from the substrate transfer mechanism and performing absorbing and holding; and a control unit for controlling the substrate transfer mechanism When the substrate is placed on the mounting table and the current processing is interrupted to perform the maintenance operation of the detecting portion, the substrate supported by the substrate supporting assembly can be held by the substrate holding device while the substrate is supported by the substrate. The support unit takes out the maintenance substrate in the substrate housing portion and exchanges the substrate on the mounting table. 如申請專利範圍第1項之探針裝置,其中該維護用基板係專門用以研磨該探針卡之探針針頭的基板。The probe device of claim 1, wherein the maintenance substrate is specifically for polishing a substrate of the probe needle of the probe card. 如申請專利範圍第1項之探針裝置,其中該基板保持裝置係鄰設於該基板收納部的上下左右處。The probe device of claim 1, wherein the substrate holding device is disposed adjacent to the upper and lower sides of the substrate housing portion. 如申請專利範圍第2項之探針裝置,其中該基板保持裝置係鄰設於該基板收納部的上下左右處。The probe device of claim 2, wherein the substrate holding device is disposed adjacent to the upper, lower, left and right sides of the substrate housing portion. 如申請專利範圍第1至4項中任一項之探針裝置,其設置有複數個該檢測部,而該控制部係在當藉由該基板支撐組件來將由第1檢測部完成檢測後的該基板搬出時,且於第2檢測部發生了需中斷當下處理以進行該維護作業之情況,能將該基板支撐組件所支撐之已完成檢測的該基板保持於該基板保持裝置,以進行該維護作業。The probe device according to any one of claims 1 to 4, wherein a plurality of the detecting portions are provided, and the control portion is used after the detection by the first detecting portion is completed by the substrate supporting assembly When the substrate is carried out, and the second detecting unit is interrupted to perform the maintenance work, the substrate supported by the substrate supporting unit can be held by the substrate holding device to perform the maintenance. Maintenance work. 如申請專利範圍第5項之探針裝置,其中除了前述預對位機構之外,更於該基板保持裝置處設置有預對位機構,且該基板保持裝置具有預對位用迴轉台的功能,能針對保持於其上之該基板進行預對位。The probe device of claim 5, wherein in addition to the pre-alignment mechanism, a pre-alignment mechanism is provided at the substrate holding device, and the substrate holding device has a function of a pre-alignment rotary table. Pre-alignment can be performed on the substrate held thereon.
TW099101536A 2009-01-21 2010-01-20 Probe device TWI466208B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009011229A JP5381118B2 (en) 2009-01-21 2009-01-21 Probe device

Publications (2)

Publication Number Publication Date
TW201029088A TW201029088A (en) 2010-08-01
TWI466208B true TWI466208B (en) 2014-12-21

Family

ID=42523227

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099101536A TWI466208B (en) 2009-01-21 2010-01-20 Probe device

Country Status (4)

Country Link
JP (1) JP5381118B2 (en)
KR (1) KR101208137B1 (en)
CN (1) CN101783305B (en)
TW (1) TWI466208B (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5384270B2 (en) * 2009-09-21 2014-01-08 東京エレクトロン株式会社 loader
US9335347B2 (en) * 2012-09-10 2016-05-10 Advantest Corporation Method and apparatus for massively parallel multi-wafer test
CN102928761B (en) * 2012-11-20 2016-05-11 上海华虹宏力半导体制造有限公司 Wafer sort system and crystal round test approach
WO2015101220A1 (en) * 2013-12-31 2015-07-09 上海微电子装备有限公司 Silicon wafer pre-alignment device and method therefor
JP6551655B2 (en) * 2015-03-31 2019-07-31 株式会社東京精密 Prober
CN105097592B (en) * 2015-06-17 2018-01-26 北京七星华创电子股份有限公司 The silicon chip distribution optoelectronic scanning method and device of semiconductor equipment bearing area
KR102503282B1 (en) * 2015-11-06 2023-02-24 세메스 주식회사 Probe station
CN105575841B (en) * 2015-12-15 2019-08-02 北京中电科电子装备有限公司 A kind of wafer measuring device
CN107785299A (en) * 2016-08-30 2018-03-09 上海微电子装备(集团)股份有限公司 A kind of silicon chip pick device
CN106807650A (en) * 2017-01-22 2017-06-09 江苏安纳金机械有限公司 A kind of discharge and recharge and the automatic material picking machine and its operation method of dormancy test
US11125814B2 (en) * 2017-02-22 2021-09-21 Sintokogio, Ltd. Test system
CN107942222A (en) * 2017-11-21 2018-04-20 德淮半导体有限公司 Tester table and test method
KR20210005078A (en) * 2018-04-27 2021-01-13 도쿄엘렉트론가부시키가이샤 Substrate processing system and substrate processing method
JP7349240B2 (en) * 2018-10-05 2023-09-22 東京エレクトロン株式会社 Board warehouse and board inspection method
JP2020096028A (en) * 2018-12-11 2020-06-18 東京エレクトロン株式会社 Inspection device and inspection method
JP7274350B2 (en) * 2019-05-28 2023-05-16 東京エレクトロン株式会社 Conveyance system, inspection system and inspection method
TWI773187B (en) * 2021-03-12 2022-08-01 旭東機械工業股份有限公司 Method and system for inspecting a wafer cassette
CN117192342B (en) * 2023-11-08 2024-02-13 深圳市森美协尔科技有限公司 probe station

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW402757B (en) * 1998-02-23 2000-08-21 Hitachi Ltd A liquid crystal display substrate, device, and its manufacturing method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56133843A (en) * 1980-03-21 1981-10-20 Nec Corp Probe grinder for probe card
JP2000164649A (en) * 1998-11-26 2000-06-16 Tokyo Seimitsu Co Ltd Needle cleaning mechanism for prober
JP4496456B2 (en) * 2001-09-03 2010-07-07 軍生 木本 Prober equipment
JP2003168707A (en) * 2001-11-30 2003-06-13 Tokyo Electron Ltd Probe device
JP2006128451A (en) * 2004-10-29 2006-05-18 Seiko Epson Corp Prober and its probe maintenance method, process for fabricating semiconductor device
JP4166813B2 (en) * 2006-05-11 2008-10-15 東京エレクトロン株式会社 Inspection apparatus and inspection method
JP5120017B2 (en) * 2007-05-15 2013-01-16 東京エレクトロン株式会社 Probe device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW402757B (en) * 1998-02-23 2000-08-21 Hitachi Ltd A liquid crystal display substrate, device, and its manufacturing method

Also Published As

Publication number Publication date
CN101783305A (en) 2010-07-21
TW201029088A (en) 2010-08-01
JP2010171139A (en) 2010-08-05
KR101208137B1 (en) 2012-12-04
KR20100085877A (en) 2010-07-29
CN101783305B (en) 2012-03-21
JP5381118B2 (en) 2014-01-08

Similar Documents

Publication Publication Date Title
TWI466208B (en) Probe device
TWI428603B (en) Probe devices, detection methods and memory media
TWI424520B (en) Detection device
US8267633B2 (en) FOUP opening/closing device and probe apparatus
TWI429014B (en) Probe device
TWI442509B (en) Check the device
JP7018784B2 (en) Contact accuracy assurance method and inspection equipment
JP6276449B1 (en) Substrate processing apparatus, control method for substrate processing apparatus, and storage medium storing program
TWI442494B (en) Probe device and detection method
TW201709416A (en) Peeling apparatus, peeling system, peeling method, and computer readable information storage medium
CN113161273B (en) Position deviation detection method and device, position abnormality determination and conveyance control method
TW201906055A (en) Substrate carrying out method
JP5667996B2 (en) Substrate processing equipment
TW201921122A (en) Substrate processing apparatus substrate processing method and recording medium
JP2021109984A (en) Device of treating substrate, and method of treating substrate
JP5343488B2 (en) Probe device
JP3801849B2 (en) Substrate processing apparatus and method
JP2014225514A (en) Peeling device, peeling system, peeling method, program, and computer storage medium
KR101766594B1 (en) Loader chamber with adapter unit
KR101218507B1 (en) Probe apparatus
JPH0541423A (en) Probe apparatus
KR20170094090A (en) Substrate inspection apparatus and substrate inspection method
JP2011100883A (en) Probe device
KR20230021892A (en) Substrate inspection appratus and substrate inspection method
KR20230156413A (en) Processing device and location determination method