TW201029088A - Probe device - Google Patents

Probe device Download PDF

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Publication number
TW201029088A
TW201029088A TW099101536A TW99101536A TW201029088A TW 201029088 A TW201029088 A TW 201029088A TW 099101536 A TW099101536 A TW 099101536A TW 99101536 A TW99101536 A TW 99101536A TW 201029088 A TW201029088 A TW 201029088A
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TW
Taiwan
Prior art keywords
substrate
wafer
probe
arm
transfer
Prior art date
Application number
TW099101536A
Other languages
Chinese (zh)
Other versions
TWI466208B (en
Inventor
Tadashi Obikane
Original Assignee
Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201029088A publication Critical patent/TW201029088A/en
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Publication of TWI466208B publication Critical patent/TWI466208B/en

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2601Apparatus or methods therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/06711Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/16Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding sharp-pointed workpieces, e.g. needles, pens, fish hooks, tweezers or record player styli

Abstract

The present invention provides a probe device capable of restraining production going down when executing the maintenance operation of a detection part through using a substrate of maintenance. The probe device comprises a wafer transportation arm which has an arm body; a pre-aligning mechanism for the positioning of orientation and central part of the wafer taken out from a wafer box; and a substrate holding part which has an adsorption part for taking over the wafer from the wafer transportation arm and keeping adsorbing it. When a situation occurs that needs to interrupt the current process immediately to execute the maintenance operation of the detection part, the substrate supported by the arm body is kept at the substrate holding device and a substrate for probe polishing stored in a substrate storing part is taken out by the arm body and exchanged with the substrate held by a wafer holder. Accordingly, the standby time of the detection part is reduced during performing a probe polishing process, thereby increasing the production of the test.

Description

201029088 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種探針裝置,係能使探針卡的探針 接觸至半導體晶圓(以下稱作晶圓)等基板之被檢測部 的電極片以進行該被檢測晶片的電氣量測。 【先前技術】 習知的探針裝置係使得探針卡之探針針頭等的探 針接觸至ic晶片的電極片以進行調查電氣特性的探針 試驗。該探針裝置具備:載入埠;檢測部,係具有探針 卡及載置台;以及搬送室,係設置有能於該載入埠及該 檢測部之間進行晶圓搬送的晶圓搬送機構。接著,使用 该晶圓搬送機構來從搬入至載入埠内的搬送容器(晶圓 搬運器)中將晶圓取出,並藉由搬送室内的預對位機構 抑或設置於晶圓搬送機構處的預對位機構來進行預對 俊,完成預對位後再將該晶圓搬送至檢測部内的載置台 上。 使用具備例如2具手臂本體(基板支雜件)者來作 為該晶圓搬送機構,1當檢測部正在進行晶圓之探針試 驗的期間,該晶圓搬送機構能藉由一側之手臂本體來將 下一個要進行檢測的晶«取出並進行預對位,並在該檢 測部内的晶圓檢測完成之前,以載置有晶圓的狀態於搬 ,室内待機。接著’當檢測部内的晶圓檢測完成後,則 藉由另-侧的手臂本體來將檢測完成的晶圓取出,再將 201029088 以一側之手臂本體所支撐的未檢測晶圓遞 但是,將該探針針頭用作探針時 戟置。。 =驗會使得電極片的贿等異物附著於該探=探針 前端’故必須進賴謂之探針 = 頭的 π磨4去,該/物。進行該探針研磨 i續輯驗的-:誤時’便—4;:=::;: € ===== = 於搬详玄允从也 A 彳則之手臂本體來將置 研磨晶圓取出並搬送=探針 體::檢測部内之已完成檢測的?:=::= 之手#本體的探針研磨晶圓遞給載置a。 * 侧之生需中斷當下處理的要°求時,有時該- 一侧之手臂本體有未檢測晶圓。此時,由於該另 晶園故無 41。Θ tl·,a曰曰圓搬送機構來將探針研磨晶圓取 支f的未檢、W於包切:料地將㈣搬送手臂所 3=:回搬運器;取出探針研磨晶圓;藉 由該探針研磨晶Κ來研赖探針針頭;以及將探針研磨 201029088 :圓遞給基板收納部等—連串的情處理完成後,才再 度從搬運器處將該未檢測晶圓取出。 又’當该檢測部為複數台(例如2台)且該晶圓搬送 3具有3具手臂本體之情況,該3具手臂本體中的2 :曰臂本體係經常支撑有未檢測晶 圓抑或已完成檢測 蚀=:而僅有1具手臂本體為清空的狀態。因此,即 曰射臂本體的個數,與前述具有2具手臂本體的 搬運器^機構之情況相同地’仍必須暫時地將晶圓搬回 到其搬運器内之槽孔狹窄,#未檢測晶圓回 得該晶圓於手外緣接觸聰運器的内部而使 運器之棚举拉 體上產生移動,抑或在將晶圓置於搬 向或中心產低因搬運器與晶圓相碰觸而使得晶圓之方 搬運器時,前述2因此’當已完成預對位之晶圓回到 中斷處理後,則必無效之虞,結果在當完成該 行該預對位的;門:^該曰曰圓重新進行預對位。故’進 探針試驗產量下^的t檢測部的待機時間變長,造成 針對此點,衷。 該探針裳置的檢^^ 载了—種探賴置,係於 外,於該檢剛部内了該探針試驗用載置台之 專用载置台,且於1外5又置一個载置探針研磨晶圓用的 晶圓。讀探針、=專用载置台上經常载置有探針研磨 針試驗用之^ A二進行探針卡的探針研磨時係使得探 後退,而將該專用载置台移動至該探 5 201029088 相接觸以針研㉟®與探針卡的探針針頭 處理,亦能於該晶B] °因此,即使發生中斷 之晶圓的情況下來進奸I讀有下—個要進行檢測 探針裝置必鮮檢㈣1卡的探針研磨。但是,前述 =置,寻探針裝置變大型化的問題2 3法 需求漸盛,故裝置之大型化並非較 落符==專利特開露… 【發明内容】 >有鑑於前述情事’本發明之目的係提供—種於使用 維濩用基板來進行檢測部之維護作業時,能抑制產量下 降的探針裝置。 本發明之探針裝置,係使得載置於載置台之被檢測 對象之基板的電極片與探針卡的探針相接觸以測量該 基板之被檢測部的電氣特性,其特徵在於具備: 載入埠,係用以載置收納有複數個基板的搬送容 器; 基板搬送機構’係於該載入埠所載置的該搬送容器 與檢測部的載置台之間進行該基板的遞送,且具有互相 獨立並可自由進退的複數個基板支樓組件,當其支樓著 未檢測之該基板而待機時,係會有一個清空的該基板支 201029088 撐組件; 搬送室,係連接至該载入埠與該檢測部,並能讓該 基板搬送機構於其内部移動; 預對位機構,係設置於該搬送室内,具有能固定該 基板並旋轉的迴轉台以及檢測出該迴轉台上之該基板 周緣的周緣檢知部,以針對自該搬送容器中取出的基板 進行方向與中心部的定位;201029088 VI. Description of the Invention: [Technical Field] The present invention relates to a probe device capable of contacting a probe of a probe card to a detected portion of a substrate such as a semiconductor wafer (hereinafter referred to as a wafer) The electrode sheet is used to perform electrical measurement of the wafer to be inspected. [Prior Art] A conventional probe device is such that a probe such as a probe needle of a probe card contacts an electrode pad of an ic wafer to perform a probe test for investigating electrical characteristics. The probe device includes: a loading cassette; the detecting unit includes a probe card and a mounting table; and the transfer chamber is provided with a wafer transfer mechanism capable of performing wafer transfer between the loading cassette and the detecting unit . Next, the wafer transfer mechanism is used to take out the wafer from the transfer container (wafer carrier) loaded into the loading cassette, and the pre-alignment mechanism in the transfer chamber or the wafer transfer mechanism is provided. The pre-alignment mechanism performs the pre-alignment, and after the pre-alignment is completed, the wafer is transferred to the mounting table in the detecting unit. As the wafer transfer mechanism, for example, two arm bodies (substrate attachments) are used, and the wafer transfer mechanism can be used by one side of the arm body while the detection unit is performing the probe test of the wafer. The next crystal to be inspected is taken out and pre-aligned, and before the wafer inspection in the detecting unit is completed, the wafer is placed in a state where the wafer is placed, and the indoor standby is performed. Then, when the wafer inspection in the detecting unit is completed, the detected wafer is taken out by the arm body on the other side, and the undetected wafer supported by the arm body of one side is delivered in 201029088. The probe needle is placed as a probe. . = The inspection will cause the foreign matter of the electrode piece to adhere to the front end of the probe = probe, so it is necessary to go to the probe of the head = the π grinding 4 of the head, the object. Performing the probe grinding i continuation test -: erroneously - '4;: =::;: € ===== = After moving the details, Xuan Yun will also grind the crystal from the body of the arm. Round take-out and transport = probe body:: The detected part of the detection unit is completed: ?:::= hand #The probe of the body is polished and the wafer is placed on the load a. * When the side of the life needs to interrupt the current processing, sometimes the arm of the one side has an undetected wafer. At this time, there is no 41 due to the other crystal garden. Tl tl·, a round conveying mechanism to un-examine the probe grinding wafer f, and to cut the material: (4) transport the arm 3 =: return the carrier; take out the probe to polish the wafer; The probe is polished by the probe to grind the probe; and the probe is ground 201029088: rounded to the substrate storage portion, etc. - after the series of processing is completed, the undetected wafer is again re-processed from the carrier. take out. In addition, when the detecting unit is a plurality of units (for example, two units) and the wafer transporting unit 3 has three arm bodies, the two arm bodies of the three arm bodies often support undetected wafers or have been supported. The detection etch =: and only one arm body is in the empty state. Therefore, the number of the ejector arm bodies is the same as the case of the carrier mechanism having the two arm bodies described above, and the slot in the carrier must be temporarily moved back to the carrier, and the slot is narrow. #未检测The wafer returns the wafer to the inside of the hand to contact the inside of the smart device to cause movement on the lifting device of the carrier, or to place the wafer in the moving direction or the center to produce low carrier and wafer phase When touching the carrier of the wafer, the foregoing 2 therefore 'when the pre-aligned wafer has been returned to the interrupt processing, it will be invalid, and the result is when the pre-alignment of the row is completed; :^ The circle is re-aligned. Therefore, the standby time of the t detecting unit which is under the probe test output becomes long, which is caused by this point. The detection of the probe is carried out, and the detection device is mounted, and the dedicated mounting table of the probe test mounting table is placed in the inspection portion, and a load placement device is placed on the outside of the probe 5 Needle grinding wafer for wafers. The probe is mounted on the dedicated probe, and the probe is used to test the probe. When the probe is polished, the probe is retracted, and the dedicated stage is moved to the probe 5 201029088. Contact with the probe needle of the needle grinding 35® and the probe card can also be used in the crystal B] ° Therefore, even if the wafer is interrupted, the rape is read, the next reading is performed. Fresh inspection (four) 1 card probe grinding. However, the above-mentioned problem is that the probe device is becoming larger and larger, and the demand for the method is gradually increasing. Therefore, the enlargement of the device is not inferior to the == patent opening; [invention content] > An object of the invention is to provide a probe device capable of suppressing a decrease in yield when a maintenance operation of a detecting portion is performed using a substrate for a matte. In the probe device of the present invention, the electrode sheet of the substrate to be detected placed on the mounting table is brought into contact with the probe of the probe card to measure the electrical characteristics of the detected portion of the substrate, and is characterized in that: The transfer container is configured to carry a transfer container in which a plurality of substrates are housed, and the substrate transfer mechanism is configured to transfer the substrate between the transfer container and the mounting table of the detection unit mounted on the loading cassette. A plurality of substrate branch assemblies that are independent of each other and free to advance and retreat. When the branch is in standby with the undetected substrate, there is an empty substrate support 201029088 support assembly; the transfer room is connected to the load And the detecting unit is configured to move the substrate transfer mechanism therein; the pre-alignment mechanism is disposed in the transfer chamber, has a turntable capable of fixing the substrate and rotating, and detects the substrate on the turntable The peripheral edge detecting portion of the periphery positions the direction and the center portion with respect to the substrate taken out from the transfer container;

^ 基板收納部,係設置於該搬送室内並收納有用以進 行該檢測部之維護作業的維護用基板; 基板保持裝置,係設置於該搬送室内並具有能從該 基板搬送機構處接收該基板且進行吸著保持之吸著機 構;以及 …,係控制該基板搬送機構,當該檢測部之載 載置有基板時且發生了需中斷當下處理以進行 乍業之情況’能將該基板支撐組件所支樓 的該維護用基板取出而與該 d:處持裝置係可鄰設於該基板收納部 測部,而探針裝置中,例如設置有複數個該檢 測和而該㈣部係在_由該基板讀組件來將由第 201029088 1檢測部完成檢測後的該基板搬出時,且於第2檢測部 發生了需中斷當下處理以進行該維護作業之情況,能將 板支撐組件所支撐之已完成檢測的該基板保持於 該基板保持裝置,以進行該維護作業。又,本發明之探 針裝置中,例如除了前述預對位機構之外,更於該基板 保持裝置處設置有預對位機構,且該基板保持裝置具有 預對位用迴轉台的功能’能針對簡於其上之該基板進 行預對位。The substrate storage unit is provided in the transfer chamber and houses a maintenance substrate for performing maintenance work on the detection unit. The substrate holding device is provided in the transfer chamber and has a substrate that can receive the substrate from the substrate transfer mechanism. a absorbing mechanism for absorbing and holding; and, for controlling the substrate transporting mechanism, when the substrate is placed on the detecting portion and a situation occurs in which the current processing needs to be interrupted to perform the business, the substrate supporting assembly can be The maintenance substrate of the branch building is taken out and the d: holding device is adjacent to the substrate accommodating portion measuring portion, and the probe device is provided with, for example, a plurality of the detection sums and the (4) portion is _ When the substrate is removed by the substrate reading unit and the detection unit has completed the detection, and the second detection unit has to interrupt the current processing to perform the maintenance operation, the board support assembly can support the board support assembly. The substrate on which the inspection is completed is held by the substrate holding device to perform the maintenance work. Further, in the probe device of the present invention, for example, in addition to the aforementioned pre-alignment mechanism, a pre-alignment mechanism is provided at the substrate holding device, and the substrate holding device has a function of a pre-alignment rotary table. The substrate is pre-aligned for the substrate.

Ο 本發明之探針裝置中,在載入埠與檢測部之間進行 基板搬送用的基板搬送機構係具有複數個基板支樓組 件,且於支撐有未檢測基板的狀態下待機時,會具有一 個清空狀態之基板支撐組件,而當檢測部内放置有已完 成檢測之基板的狀態下發生需中斷當下處理並以維護 用基板來進行檢測部的維護作業時,能藉由具備有吸著 機構的基板保持裝置來暫時地接收由基板支撐組件所 支撐之已完成預對位的未檢測基板。因此,能將未檢測 基板保持於從基板搬送機構處所接收時的姿勢(基板的 中心位置及方向)的狀態,故無需再次進行預對位,而 可直接搬入檢測部。因此,能縮短檢測部的待機時間以 抑制產量下降。 【實施方式】 參考圖1至圖12來說明本發明第丨實施形態的探 針裝置。如圖1至圖3所示,探針裝置具備:裝載部卜 201029088 係用以傳遞排列有複數個被檢測晶片(被檢測部)之基 板的晶圓W (參相6);以及探針裳置本體2,係針對 晶圓W來進行探針試驗―幻。首先,簡單地說明 有關裝載部1及探針裝置本體2的整體配置。 裝載部1係具備:第1載入埠11與第2載入埠12, 係能讓收納有複數個晶圓w的密閉型搬送容器(搬運 益)之FOUP100搬入且沿γ方向(圖中左右方向)相 互分離地對向設置;以及搬送室1G,係設置於該等載 入埠1卜12之間。載入璋u (12)各自具備有箱體13 (14) ’並能從該載入埠u ( 12)之圖中χ方向側所設 置的搬入口 15(16)處將FOUP1〇〇搬入至箱體13(14) 内。搬入後之該F〇UP100藉由該载入埠u (12)所具 備的盍體開閉機構(圖中未顯示)來將蓋體取下,並將該 蓋體固定於載人埠u (12) _壁處,再旋轉該已取:ρ 蓋體的FOUPIOO,使其開口部面向搬送室1〇側。 裝載部1係設置有用以控制如圖2所示之探針裝置 的控制部5。該控制部5係由例如電腦所組成,且除了 由記憶體、CPU所組成之資料處理部之外,更具備有探 針試驗處理程式50與中斷控制處理程式51等處理程 式。探針試驗處理程式50係由用以控制:將F〇upi〇〇 搬入至載入埠11 (12),再從_1〇〇内將晶圓臂搬 入至探針裝置本體2以輯騎試驗,賴將該晶圓w 搬回FOUPIOO乃至將F〇UP1〇〇搬出為止的晶圓貨搬 送紅序與该一連串之各部位動作的步驟群所組成。又, 201029088 成°該等處理程式(純含關於處理參驟群所組 顯示等處理程式)餘納於例如軟碟、光=知作與 =(光磁_)、補等記,_體_絲轉控^ 該探針裝置本體2係在圖中χ軸方 =也鄰設至該裝載部1,並具有沿Υ軸方向、= 數口(例如4台)檢測部2卜另外,圖2係顯 複 板25取下之狀態的檢測部21。 、後述上 檢測部2i係具備有如圖2、圖3所示馳體^, =框體22内部則設置有台座單元24與上側攝影部9。 C»座單兀24係能自由地沿χ、γ、ζ 動’亦即於水平面上能自由地縱橫移社沿高声 自由地移動,而其上部處更可驗直軸旋轉。ς台座= 兀24的上部係載置晶圓w用的載置台並積載 Ο 真空吸著功能的晶圓挾具4。接著,該台座單元 =部則設置有下側攝影部8,其具備有用以拍攝如後述 探針卡6的微型攝影機等。 晶圓挾具4係能在進行晶圓w傳遞的傳遞位置、 晶圓表面之攝影位置以及使得探針卡6之探針針頭了接 觸至晶圓W的接觸位置(檢測位置)之間自由地移動。 又,如圖3 (b)所示,於該框體22側面處,即血搬送 室10密接的側面處_成有連接該搬送室ig内部时 201029088 框體U内部的搬入出π 23。然後,能藉由該搬入出口 23來將晶圓W搬送至框體22内之晶圓挾具4。接著, 上側攝影部9係具備有用以拍攝载置於晶®挾具4之晶 圓W的微型攝影機等。In the probe device of the present invention, the substrate transport mechanism for transporting the substrate between the loading cassette and the detecting unit has a plurality of substrate branch assemblies, and when it is in standby while supporting the undetected substrate, When the substrate supporting assembly is in an empty state, and when the substrate to be inspected is placed in the detecting portion, the maintenance process for interrupting the current processing and performing the detecting portion with the maintenance substrate can be performed by providing the absorbing mechanism. The substrate holding device temporarily receives the un-detected substrate that has been pre-aligned by the substrate support assembly. Therefore, the undetected substrate can be held in the state of the posture (the center position and the direction of the substrate) when it is received from the substrate transfer mechanism. Therefore, it is not necessary to perform the pre-alignment again, and it can be directly carried into the detecting portion. Therefore, the standby time of the detecting portion can be shortened to suppress the decrease in the yield. [Embodiment] A probe device according to a third embodiment of the present invention will be described with reference to Figs. 1 to 12 . As shown in FIGS. 1 to 3, the probe device includes: a loading unit 201029088 for transferring a wafer W (parameter 6) in which a plurality of substrates to be detected (detected portions) are arranged; and a probe skirt The body 2 is placed on the wafer W for probe testing. First, the overall arrangement of the loading unit 1 and the probe device body 2 will be briefly described. The loading unit 1 includes a first loading cassette 11 and a second loading cassette 12, and is capable of loading the FOUP 100 of the sealed transport container (transportation benefit) in which a plurality of wafers w are stored in the γ direction (in the figure). The directions are disposed opposite to each other; and the transfer chamber 1G is disposed between the loads 1 and 12 . The loading 璋u (12) each has a casing 13 (14)' and can carry the FOUP1 至 to the loading port 15 (16) provided on the χ direction side of the loading 埠u (12) Inside the box 13 (14). After the loading, the F〇UP100 removes the cover by the carcass opening and closing mechanism (not shown) provided in the loading port (12), and fixes the cover to the carrying person (u (12) ) _ Wall, then rotate the FOUPIOO that has been taken: ρ cover so that the opening faces the side of the transfer chamber 1 . The loading unit 1 is provided with a control unit 5 for controlling the probe device as shown in Fig. 2 . The control unit 5 is composed of, for example, a computer, and includes a data processing unit including a memory and a CPU, and a processing procedure such as a probe test processing program 50 and an interrupt control processing program 51. The probe test processing program 50 is used to control: loading F〇upi〇〇 into the load port 11 (12), and then loading the wafer arm into the probe device body 2 from the inside of the probe device to perform the ride test. It consists of a group of steps in which the wafer w is moved back to the FOUPIOO and the wafers are transported to the red order and the series of parts are operated. In addition, 201029088 into these processing programs (pure processing procedures related to the processing of the group of instructions), such as floppy disk, light = know and = (photomagnetic_), fill, etc., _ body _ Wire rotation control ^ The probe device body 2 is in the figure, the axis is also adjacent to the loading unit 1, and has a detection unit 2 along the x-axis direction and = a number of ports (for example, 4 units). The detecting unit 21 in a state where the multi-plate 25 is removed is displayed. As will be described later, the detecting unit 2i is provided with a body 2 as shown in Figs. 2 and 3, and the pedestal unit 24 and the upper side photographing unit 9 are provided inside the frame 22. The C»seat 兀24 series can freely move along the χ, γ, ’ ', ie, horizontally and horizontally, and can move freely and freely, while the upper part can be rotated. The upper part of the =24 is placed on the stage for mounting the wafer w, and the wafer cooker 4 of the vacuum suction function is stacked. Next, the pedestal unit = portion is provided with a lower side photographing portion 8 provided with a micro camera or the like for photographing a probe card 6 to be described later. The wafer cooker 4 can freely transfer between the transfer position at which the wafer w is transferred, the photographing position of the wafer surface, and the contact position (detection position) at which the probe needle of the probe card 6 contacts the wafer W. mobile. Further, as shown in Fig. 3 (b), when the side surface of the casing 22, that is, the side surface where the blood transfer chamber 10 is in close contact, is connected to the inside of the transfer chamber ig, 201029088 is carried in and out of the frame U. Then, the wafer W can be transported to the wafer cookware 4 in the casing 22 by the loading and unloading port 23. Next, the upper photographing unit 9 is provided with a micro-camera or the like for photographing the crystal W placed on the crystalware cookware 4.

如圖3 (a)所示,於晶圓挾具4及上侧攝影部9 的移動區域上方係設置有作為該框體22之頂部的上板 25,探針卡6則係安裝固定於該上板25處。於探針卡 6的上面側安裝有圖中未顯示的測試頭,該探針卡6與 測試頭係藉由圖中未顯示的探針接腳單元來形成電氣 連接。又,於探針卡6的下面側係對應於該晶圓w之 電極片的配置,而將各自電氣連接至上面側電極群的探 針(探針針頭7)設置於例如該探針卡6的整面上。 如圖2、圖3所示,搬送室1〇係設置有作為基板 搬送機構的晶圓搬送手臂3。晶圓搬送手臂3之結構係 於能沿錯直軸自由㈣、自由昇降並且能沿圖巾γ方向 自由移動的搬送基台3G處設置有能自由進退的第j手 35與第2手臂本體36等2具手臂本體(基板支 异、、且件)。此處,符號33係能沿圖中γ方向延伸的導軌 而移動的基台移動部’符號32係能相對該基台移動部 33而昇降的基台昇降部,符號31則係設置於該基台昇 降部32的迴轉部。As shown in FIG. 3(a), an upper plate 25 as a top portion of the frame 22 is provided above the moving area of the wafer cooker 4 and the upper image capturing unit 9, and the probe card 6 is attached and fixed thereto. Upper plate 25. A test head, not shown, is mounted on the upper side of the probe card 6, and the probe card 6 and the test head are electrically connected by a probe pin unit not shown. Further, on the lower surface side of the probe card 6, the electrode sheets corresponding to the wafer w are arranged, and the probes (probe needles 7) each electrically connected to the upper electrode group are provided, for example, to the probe card 6. On the whole face. As shown in Figs. 2 and 3, the transfer chamber 1 is provided with a wafer transfer arm 3 as a substrate transfer mechanism. The structure of the wafer transfer arm 3 is provided with a j-hand 35 and a second arm body 36 that can freely advance and retreat at a transport base 3G that can freely move (4) along the wrong straight axis and freely move and move freely in the γ direction of the towel. Two arm bodies (substrate, and pieces). Here, the symbol 33 is a base moving portion 'symbol 32 that can move along the guide rail extending in the γ direction in the drawing, and the base 32 is movable up and down with respect to the base moving portion 33, and the symbol 31 is provided on the base. The turning portion of the table lifting portion 32.

El f/r , ”,卞、肢^兴乐z于1 係形成有朝向前端側的u字型缺口部55、56 在搬送基台3〇之上方面位於手臂本體3S⑽左4 201029088 端處各㈣置有平行的2條導軌37,該第i手臂本體 35與該第2手臂本體36係各自藉由手臂導件%、扣 而沿著該料軌37、37來進行前後移動。 又:搬送基台30係設置有預對位機構40 (參考圖 4),其係用以針對第1手臂本體35抑或第2手臂本體 36所栽置的曰曰圓W進行預對位’以調整該晶圓w的方 向,同時檢測其中心仅置。如圖4所示,該預對位機 40具備挾具部41、感測器跨樑42、光感測器幻 光通過部44’並於何本體35、36τ方處設 未顯承的發光部。 圖中Θ 挾具部41係能旋轉該晶圓w的迴轉台,挟具部 的迴轉中4設定為對應於在搬送基台3()上呈後 態之該手臂本體35( 36)上的該晶圓w之中心位置 該挾具部41係具備有能沿圖中z軸方向昇降的^ 部’且能於非進行預對位的待機狀態時下降而停止 會干擾該手臂本體35、36進退的位置處。接著,於=El f/r , ", 卞, limb ^ Xingle z are formed in the U-shaped notch portions 55, 56 toward the distal end side, and are located at the end of the arm body 3S (10) left 4 201029088 on the transfer base 3 各(4) Two parallel guide rails 37 are provided, and the i-th arm body 35 and the second arm main body 36 are moved back and forth along the rails 37 and 37 by the arm guides % and buckles. The base 30 is provided with a pre-alignment mechanism 40 (refer to FIG. 4) for pre-aligning the first arm body 35 or the circle W implanted by the second arm body 36 to adjust the crystal. The direction of the circle w is simultaneously detected, and the center is only placed. As shown in FIG. 4, the pre-aligner 40 is provided with the cooker portion 41, the sensor span beam 42, and the photo sensor pass-through portion 44'. In the main body 35, 36τ, an unilluminated light-emitting portion is provided. In the figure, the cooker portion 41 is a turntable that can rotate the wafer w, and the swing portion 4 of the cookware portion is set to correspond to the transfer base 3 () The center position of the wafer w on the arm body 35 ( 36) in the rear state is provided with the portion 41 that can be raised and lowered along the z-axis direction in the figure and can be pre-prepared Lowered standby position and stops at the position of the arm can interfere with the body 35, when the forward and backward. Next, in =

行預對位時壯昇而從手臂本體35、36上 微地抬起以進行旋轉。 因评枘U 搬送基台30的上方面係設置有不會與該手臂本體 35、36所支撐的晶圓貿產生干擾的感測器跨樑a,該 感測器跨樑42係搭載有能接受來自圖中未顯示之發光 部所照射出並穿透該晶圓w之光線的光感剛器43:接 著’手臂本體35、36係形成有沿圖中X軸方向延伸的 光透過部44,而發光部係設置於該光透過部44下方。 12 201029088 然後,發光部的光線會通過該光透過部44,並從下方 照射至包含藉她具部爿而從手臂本體%%處抬起 之該晶圓w的周緣部(蠕部)區域。When the line is pre-aligned, it is lifted up and slightly lifted from the arm bodies 35, 36 for rotation. Since the top surface of the transfer base 30 is provided with a sensor cross member a that does not interfere with the wafer trade supported by the arm bodies 35, 36, the sensor cross-beam 42 is equipped with energy. The light sensor 43 receives light from the light-emitting portion not shown in the drawing and penetrates the wafer w: Next, the arm bodies 35 and 36 are formed with light transmitting portions 44 extending in the X-axis direction in the drawing. The light emitting portion is disposed below the light transmitting portion 44. 12 201029088 Then, the light from the light-emitting portion passes through the light-transmitting portion 44, and is irradiated from below to the peripheral portion (creep portion) of the wafer w which is lifted from the arm body %% by the member portion.

藉由預對位機構4〇如後述般地進行預對位。首 先,藉由挾具部41來將第i手臂本體35抑或第2手臂 本體36上的晶圓W稍微括起,並旋轉該晶圓w。接著, 從發光部將光線照射至包含㈣W之周緣部(端部) 區域’再透過光感測器43來檢測穿透晶圓W的光線, 並將檢出訊號傳送給控制部5。控制部5係根據該檢出 訊號’而於晶圓”、偏心時則調整第1手臂本體35抑 ,第2手臂本體36的位置,從挾具部41上將晶圓w 遞、、°該第1手臂本體35抑或該第2手臂本體36,並 ;補正4偏心的偏移量後再將晶圓W放回挾具部Μ L以修正该晶圓W的偏心。然後,旋轉該挾具部41 =整晶圓W的方向’以使得晶圓缺口等係朝向第1 ,體35抑或第2手臂本體36上的特定方向。藉以 進行該晶圓W方向及中心的位置調整。 收納^如圖2、圖3所示,搬送室10係設置有基板 的。卩60’且其係棚狀地載置有複數個例如陶瓷所組 (夂^針卡6之探針針頭7研磨用的探針研磨晶圓Wb 各圖6)。基板收納部60係設置於载入埠11 (參考 之下方側且能讓晶圓搬送手臂3之手臂本體35、 6接近以進行存取的位置。 u基板收納部60係具備有如圖5、圖6所示的基 13 201029088 63、64 ϋ^基台61上方面的3個載®組件62、 ^ 65 656;; 64 1 所層積而成。接著。Λ Z軸方向且相距特定間隔 隨件62、63、64’的於爪部65之間具有間隙,該載 形成梳齒狀。又,2縱向(Z軸方向)的剖面形狀係 部65於Z轴方向之=:牛/2、63、64之^ ^ 成位置係約略均勻的。 ❹ b 02 63、64係位於基台61的上方, =:::=,有-個載一-, 藉由載件62° A *裝有—個載隐件63。接著, 的狀64的爪部65以支撐周緣部3點 ❹ 部^^ Λ述探針研磨晶圓。即,基板收納 糸猎由各载ϋ組件62、63、64的爪部65來形成 用以收納探針研磨晶圓Wb等的棚架。另外,如圖6中, ^ 了方便說明,故於基板收納部6〇棚架只收納了 i片 探針研磨晶圓Wb,但本實施形態中,其他的棚架處亦 收納有複數個探針研磨晶圓Wb。 又,基板收納部60上方係設置有基板保持裝置 70,其係能暫時地固定手臂本體35、36所支撐的搬送 中之晶圓W。該基板保持裴置7〇係位於基台61之後方 側的一側處,且安裝有沿鉛直方向延伸至較載匣組件 62、63、64更高水平位置的支撐部71。然後,從該支 揮部71處朝向基板收納部6〇上方的約略中央部水平地 201029088 ^ίτ a} 72—體成型且用=。的前端係設置有與該腕部 吸著部(真空挾具真空吸著該約略圓盤狀之晶圓W的 成有複數個真空吸4 且忒吸著部73的上方面係形 ❹ 蟓 之間係形成有凹部二孔74 :又’於腕部72與吸著部73 板保持裝置70以谁",故當手臂本體35、36接近至基 36與腕部72不备开^曰曰圓W傳遞時’該手臂本體35、 退時的晶圓搬送;22。另外,設定存取位置與進 的手臂本體35 (J、角度,以使得晶31搬送手臂3 來朝向基板保持裴¥:經常地由相同位置以相同角度 多少次’亦不退移動,故無論反覆地進退 70相互接觸而干1切本體35 (36)與基板保持褒置 該基板轉裝置7G藉由以 曰曰0 W並與晶圓搬送手臂 p 73來及耆保持該 將晶圓W保持於固定之 曰進仃曰曰圓傳遞時,能 不使其中心位置及方 &。A此,能保持該晶圓W 7。可稱為晶圓‘向勢=:故該基板保持裝置 遞给ΐ=77=::體送, 首先,移動晶圓搬送手臂3以使 (36)的動作。 臂太骑Μ# 固搬送手臂3的手 體(36)能移動至可對基板收納部60進行存 手t體=二圖7 (a)所示’讓支撐有晶圓〜的 ^本體35(36)朝向該吸著部73的上方位置處 a、’該手臂本體35 (36)係如前述般地相對基板保 15 201029088 持裝置70以經常相同之方向進出入。然後,如 Γ5Γ=73相對地進人該手臂本體35 (36)的2 4 55 ( 56)内’手臂本體35 (36)的突出部分 凹部75内’而在使得晶圓w之約略中央部分與該 部73中央部形成-致的位置處將手臂本體35 (二者 ^此時’晶圓W與吸著部73僅相距—微小間陳^ 其-人y如圖7 (b)所示,於真空吸著孔7灸 圖5)處藉由腕部72内的吸力通路(圖中未顯示)來淮" 吸引的同時降下該手臂本體35 (36),以使得晶圓2 吸附於吸著部73 (真空吸著)。因此能將該晶圓 於基板保持裝置7G上且不會移動的狀態(保持姿= 狀態)。紐’如圖7 (〇所示,該手臂本體% = 下降後係停止於吸著部73與餘組件62、63、6 區域處’並朝搬送基台3〇退後。藉此,基板 ; 70便能將支撐於手臂本體35 ( 36 )的晶圓w在維$ 姿勢的狀態下來保持。另外,藉由手臂本體35 (3〇、 來接收被保持於基板保持裝置7G上的晶圓w時 前述說明相反_序,讓手f本體%⑶)與基 持裝置70協調運作以接收該晶圓w。 ” 其次’簡單地說明以該探針裝置來進行探針試驗的 連串之流程。此處,為了方便說明,故將圖2所示檢 測部21«載入埠u侧的檢測部21開始依序命名為第^ 〜第4檢測部2卜又,該探針試驗中,為了方便說明, 16 201029088 疋^第1手臂本體35來進行晶圓w的預對位。 首先,如圖2所示,藉由晶圓搬送手臂3來從載置 般的觸灣内將晶_搬出,並如前述 設置於晶圓搬送手臂3處的預對位機構40 曰圓2對位後’再將晶圓|搬送至第1檢測部21的 搬上。然、後與第1檢測部21相同地依序將晶 ^搬^至第2〜第4檢測部2卜於所有的檢測㈣Pre-alignment is performed by the pre-alignment mechanism 4 as will be described later. First, the wafer arm W on the i-arm main body 35 or the second arm main body 36 is slightly enclosed by the cooker portion 41, and the wafer w is rotated. Then, the light is irradiated from the light-emitting portion to the peripheral portion (end portion) region including the (four) W, and the light sensor 43 is detected to detect the light passing through the wafer W, and the detection signal is transmitted to the control portion 5. The control unit 5 adjusts the first arm body 35 based on the detection signal 'on the wafer' or the eccentricity, and adjusts the position of the second arm body 36 from the cookware unit 41 to the wafer w. The first arm body 35 or the second arm body 36 is adjusted, and after the offset of the eccentricity of the 4 is corrected, the wafer W is returned to the cooker portion Μ L to correct the eccentricity of the wafer W. Then, the cookware is rotated. The portion 41 of the whole wafer W is oriented such that the wafer notch or the like faces the first direction, the body 35, or the specific direction on the second arm body 36. The wafer W direction and the center position are adjusted. As shown in Fig. 2 and Fig. 3, the transfer chamber 10 is provided with a substrate. The 卩60' is placed in a slab-like manner, for example, a ceramic set (a probe for polishing the probe needle 7 of the 针^ card 6) Each of the needle-worn wafers Wb is shown in Fig. 6). The substrate accommodating portion 60 is provided at the loading port 11 (the lower side of the reference and allows the arm bodies 35 and 6 of the wafer transfer arm 3 to approach the access position. The accommodating portion 60 is provided with three y-support members 62, ^ 65 656; on the base 13 201029088 63, 64 ϋ ^ base 61 as shown in FIGS. 5 and 6; 4 1 is laminated. Then, Λ Z-axis direction and a certain interval are provided with a gap between the claws 65 of the members 62, 63, 64', and the load is formed into a comb shape. Further, 2 longitudinal (Z-axis) The direction of the cross-sectional shape portion 65 in the Z-axis direction = the position of the cows/2, 63, 64 is approximately uniform. ❹ b 02 63, 64 are located above the base 61, =::: =, there is - one load - -, by the carrier 62 ° A * is loaded with a load-bearing member 63. Then, the claw portion 65 of the shape 64 supports the peripheral portion 3 points, and the probe is ground. The wafer is stored in the substrate by the claw portions 65 of the respective load-carrying members 62, 63, 64 to form a scaffold for accommodating the probe polishing wafer Wb, etc. Further, as shown in FIG. Therefore, only the i-probe polished wafer Wb is accommodated in the substrate storage unit 6 shed. However, in the present embodiment, a plurality of probe polishing wafers Wb are accommodated in other scaffolds. Above the 60, a substrate holding device 70 is provided which temporarily fixes the wafer W being conveyed supported by the arm bodies 35, 36. The substrate holding device 7 is located behind the base 61 At one side, and a support portion 71 extending in a vertical direction to a position higher than the load carrying members 62, 63, 64 is mounted. Then, from the branch portion 71 toward the approximate center above the substrate receiving portion 6〇 The horizontal end is 201029088 ^ίτ a} The front end of the body is formed with the wrist suction portion (the vacuum cooker vacuum suctions the approximately disk-shaped wafer W into a plurality of vacuums) The suction portion 4 and the upper portion of the sucking portion 73 are formed with a recessed portion two holes 74: 'in the wrist portion 72 and the suction portion 73, the plate holding device 70 is for whom", so the arm body 35 36 is close to the base 36 and the wrist 72 is not ready to open. When the circle W is transmitted, the arm body 35 and the retracted wafer are transported; In addition, the access position is set to the arm body 35 (J, angle, so that the crystal 31 carries the arm 3 to be held toward the substrate 裴¥: often from the same position at the same angle as many times), and does not retreat, so The ground advancement and retreat 70 are in contact with each other, and the main body 35 (36) is held in contact with the substrate. The substrate transfer device 7G holds the wafer W by holding the arm p 73 and the wafer transfer arm p 73. When the fixed 曰 仃曰曰 传递 传递 传递 , , , , , , 中心 中心 中心 中心 中心 中心 中心 中心 能 能 能 能 能 能 能 能 能 能 能 能 能 能 能 能 能 能 能 能 能 能 能 能ΐ=77=:: body delivery, first, moving the wafer transfer arm 3 to operate (36). Arm too rider # The hand (36) of the solid transport arm 3 can be moved to the substrate storage unit 60 Save the body t = two Figure 7 (a) shows the 'body 35 (36) supporting the wafer ~ toward the upper position of the suction portion 73 a, 'the arm body 35 (36) is as described above In general, the substrate holder 15 201029088 holds the device 70 in and out in the same direction. Then, if the Γ5Γ=73 relatively enters the arm body 35 (36) 2 4 55 ( 56) within the protruding portion 75 of the 'arm body 35 (36)' and the arm body 35 is placed at a position such that approximately the central portion of the wafer w forms a central portion of the portion 73 ( At the same time, the wafer W and the absorbing portion 73 are only apart from each other - the minute 陈 _ _ _ y y as shown in Figure 7 (b), at the vacuum suction hole 7 moxibustion 5) by the wrist 72 The inner suction path (not shown) is lowered to attract the arm body 35 (36) so that the wafer 2 is attracted to the absorbing portion 73 (vacuum suction). The state in which the substrate holding device 7G does not move (holding posture = state). New Zealand' is shown in Fig. 7 (〇, the arm body % = is lowered and stops at the absorbing portion 73 and the remaining components 62, 63, 6 The area is 'retracted toward the transfer base 3', whereby the substrate 70 can hold the wafer w supported by the arm body 35 (36) in a state of a dimension of $. In addition, by the arm body 35 (3), when the wafer w held on the substrate holding device 7G is received, the foregoing description is reversed, and the hand f body %(3) is coordinated with the base device 70 to be connected. This wafer w. "secondary" simply describes a series of processes for performing probe testing using the probe device. Here, for convenience of explanation, the detecting portion 21 « shown in Fig. 2 is loaded on the side of the 埠u side. The detecting unit 21 is sequentially named as the fourth to fourth detecting units 2, and in the probe test, for convenience of explanation, the first arm body 35 performs the pre-alignment of the wafer w. As shown in FIG. 2, the wafer transfer arm 3 is used to carry out the wafers from the placed touch bay, and the pre-alignment mechanism 40 disposed at the wafer transfer arm 3 is aligned as shown above. The wafer is transported to the first detecting unit 21 again. Then, in the same manner as the first detecting unit 21, the crystals are sequentially transferred to the second to fourth detecting units 2 for all the detections (four).

有晶圓W,而當所有的檢測部21正在進行探 ΓΛ將?間’該晶圓搬送手臂3係藉由第*手臂= 位,而個要進行檢測的晶圓W搬出並進行預對 而於搬送室10内待機。 8 ==r圓w,_探針;== 表面的電極片(圖中未顯示)位置之攝夺 ”拉再根據該攝影資料來計算出使探針針頭7與^ 片相接觸之接觸座標,並將晶圓觸 ::然後’讓探針針頭7與刪相接 待探針4驗完成後,晶圓挾具4會移動到搬入出口 23附近。此時’由於晶圓搬送手臂3的第2 36上未載置有晶㈣,故藉由第2手臂本體%來取出 已完成檢測之晶圓W,同時將第i手臂本體%所支柃 的未檢測晶圓W遞給晶圓挾具4。然後,晶圓搬送手‘ 17 201029088 3將已;^成檢測之晶圓w搬回F〇upi〇〇,同時冬 FOUP100内收納有仍未檢測之晶圓w時,則將下一個 ==象的晶圓W搬出。該-連串的步驟於其 :的第一2〜弟4檢測部21亦同樣地進行。經過以上步 3 之探針裝置便能藉由—個晶圓搬送手臂 針試驗/將晶圓W搬送至4台檢卿21處以進行探 ❹ ”==驗所=部:著根=處理程式 是否要中斷當下;== 圖12夾雜nn ‘ α "、-人’翏考圖8至 (探針研5磨處理) 該方:斷處理之探針針頭7;研2 慮二針二頭7之探針研磨處理的情況主要可考 測晶圓Τ係當晶圓搬送手臂3支樓有未檢 〇 探針研磨處G内待機之時點來進行該 檢測二tl,第2狀況係於第1檢測部21處進行未 第2檢!二t已完成檢測之晶圓,的交換後,馬上於 圖9來說該探針研磨處理。首先,參考圖/、 送手臂I:狀況。另外’說明第1狀況時,晶圓搬 所栽置的未檢測晶圓係y 搬 ‘4所栽置的已完成檢測之晶圓2'.°p 2晶圓 60所载置的探針研磨晶圓係Wb/W2,基板收納部 18 201029088 a對所示’當晶圓搬送手臂3支撐有 之時=二而在搬送室 :rr_:r二 丹-人,如圖8 Γ Μ鮮-且、前碩i) 〇 =晶圓m保持於基板二::::體上 吗vvD取出(|碩接著,盥並 :藉由晶圓搬送手臂3的預對位二4。:= 的檢测Si::::’配合欲實施探針研磨處理 1耒進盯該探針研磨晶圓Wb之 心位置定位。然後,將晶圓搬送手臂3移動丄欲:、 探針研磨處理的檢測部21之搬f移^至欢實施 前方(箭頭3)。 之搬入出口 Μ參考圖3) 的於’如® 8 (〇所* ’從需要進行探針研磨處理 遞給晶圓搬送手臂3的第;之晶圓W2 將第1手臂本體35所支撐的探H =搬出,同時 該晶圓挾且4 (箭頭4) t針研磨晶圓Wb搬入至 兮曰圓…()者於該檢測部21處,移動 二== 栽;於晶圓挾具4上的探針研磨晶 =處理: = = =該探針針頭7的探針 處理之_讓^搬_頭7的探針研磨 Ί U搬送手臂3移動到能對KKJP1〇〇 取的位置,並將已完成檢測的晶圓W2搬入至 201029088 FOUP100 内(箭頭 5)。 如圖9 (a)所示’將晶圓W2搬入FOUP100後, 不再從FOUP100内取出未檢測晶圓w而直接將晶圓 搬送手臂3移動至能對基板收納部6〇進行存取的位置 ^箭頭6)。其次,藉由第1手臂本體35來接收保持於 土,保持裝置7〇的晶圓W1 (箭頭7),並如圖9 (匕) 所示地將晶圓搬送手臂3移動至探針研磨處理中的檢 ^部21之搬入出口 23 (參考圖3)前方(箭頭8)。铁 檢測部21完成探針研磨處理後,將載置於晶圓 搬出探針研磨晶圓Wb遞給第2手臂本體%而 =圓Π?第1手臂本體35所支擇的晶請搬入 主日日圓挾具4 (箭頭9)。 於晶=二9 = 斤示,該檢測部21便針對載置 進行該探針試驗::J 始進行探針試驗。接著,在 基板收納部:=取:=手臂3移動到能對 :磨晶圓Wb搬入至基板收納部;頌㈣探針 便完成了作為該中斷處理則頭1〇。糟此, 連串步驟,然後’根據探針試二=研=理的-行該探針試驗。 處里程式50來繼續進 磨處理(中斷處二在:^:試驗處理以進行探針研 樓之已完成預對位的曰m字晶圓搬送手臂3所支 7。的情況下進行該“磨處二== 20 201029088 研磨處理後,再從基板保 並搬入至檢測部21,由於二=接收該晶圓% 圓wi的姿勢保持為自夺裝置70係能將晶 態,因此藉由曰二臂處所接收時的狀 出的晶圓1其6完成 二處取 i隹耔葙祖〜^ 士 识可促1々馬有效,故能無需 進订預對位而直接搬入至檢測部21内。 其次,參考圖10至圖12來說明第Is there a wafer W, and when all the detection sections 21 are exploring? The wafer transfer arm 3 is moved by the first arm = position, and the wafer W to be detected is carried out and pre-aligned, and is placed in the transfer chamber 10 for standby. 8 ==r circle w, _probe; == the position of the electrode piece (not shown) on the surface" Pull and then calculate the contact coordinates of the probe needle 7 and the piece according to the photographic data. And the wafer touches:: Then, after the probe needle 7 and the phase-cut reception probe 4 are completed, the wafer cooker 4 will move to the vicinity of the carry-in and exit 23. At this time, 'because of the wafer transfer arm 3 Since the crystal (4) is not placed on the second 36, the wafer W that has been inspected is taken out by the second arm body %, and the undetected wafer W supported by the i-th arm body % is transferred to the wafer cookware. 4. Then, the wafer transfer hand '17 201029088 3 will have been transferred to the F〇upi〇〇, and the winter FOUP100 will contain the undetected wafer w, then the next = = The wafer W of the image is carried out. The series of steps is performed in the same manner as the first 2 to the fourth detection unit 21. The probe device of the above step 3 can transfer the arm by a wafer. Needle test/transfer wafer W to 4 prosecutors 21 for investigation ”==inspection=part: root=processing program to interrupt current; == Fig. 12 is mixed with nn 'α ", -People's test Figure 8 to (probe grinding 5 grinding treatment) This side: the probe needle 7 of the broken treatment; the research 2 The detection is performed when the wafer transfer arm 3 is in the unchecked probe polishing position G, and the second condition is performed at the first detecting unit 21. The second detection is completed. After the exchange of the wafers, the probe is polished as shown in FIG. First, refer to the figure /, send arm I: status. In addition, when the first situation is described, the undetected wafers placed on the wafer transfer y are loaded with the completed wafers 2'. Wafer system Wb/W2, substrate storage unit 18 201029088 a pair as shown when 'the wafer transfer arm 3 is supported = two in the transfer room: rr_: r two Dan - person, as shown in Figure 8 Μ - - and前, i) 晶圆 = wafer m is kept on the substrate 2:::: body? vvD is taken out (| The Si::::' is intended to perform the probe polishing process, and the position of the center of the probe polishing wafer Wb is positioned. Then, the wafer transfer arm 3 is moved: the detecting portion 21 of the probe polishing process Move to the front of the implementation (arrow 3). The loading and exiting port is referred to in Figure 3) in the section of '如® 8 (〇所*' from the probe grinding process to the wafer transfer arm 3; The wafer W2 carries out the probe H = supported by the first arm body 35, and the wafer 挟 and 4 (arrow 4) t-needle polishing wafer Wb are carried into the circle... () at the detecting portion 21 , moving two == planting; Yu Jing Probe polishing on the cooker 4 = treatment: = = = probe processing of the probe needle 7 _ let the move _ head 7 probe grinding Ί U transport arm 3 moved to the KKJP1 Position and move the completed wafer W2 into the 201029088 FOUP100 (arrow 5). As shown in Figure 9 (a), after the wafer W2 is moved into the FOUP100, the undetected wafer w is no longer taken out of the FOUP100. The wafer transfer arm 3 is directly moved to a position (arrow 6) where the substrate storage unit 6 can be accessed. Next, the wafer W1 (arrow 7) held by the holding device 7 is held by the first arm body 35, and the wafer transfer arm 3 is moved to the probe grinding process as shown in Fig. 9 (匕). The inspection unit 21 in the middle is moved in front of the exit 23 (refer to FIG. 3) (arrow 8). After the iron detecting unit 21 completes the probe polishing process, the wafer is carried out on the wafer carrying out the probe polishing wafer Wb and is delivered to the second arm body % = = round? The first arm body 35 is selected to be loaded into the main day. Japanese cookware 4 (arrow 9). In the case of Yu Jing = 2 9 = kg, the detecting unit 21 performs the probe test for the placement of the probe test: :J. Next, in the substrate housing portion: =: = arm 3 is moved until the wafer Wb is loaded into the substrate housing portion; and the probe (4) is completed as the interrupt processing. Worse, a series of steps, and then the probe test according to the probe test = test = rational. The mileage type 50 is used to continue the grinding process (the interruption is performed at: ^: the test processing is performed in the case where the probe building has completed the pre-alignment of the 曰m-word wafer transfer arm 3; Grinding place 2 == 20 201029088 After the grinding process, it is carried out from the substrate to the detecting portion 21, and since the position of receiving the wafer % circle wi is maintained as the self-collecting device 70, the crystal state can be obtained. When the two arms are received, the wafer 1 is taken out and the two are taken from the second place. The singularity of the wafer is valid. Therefore, it can be directly loaded into the detecting unit 21 without ordering the pre-alignment. Next, the description will be described with reference to FIGS. 10 to 12 .

欢/、丨lc之晶圓挾具係4c;第3檢測部2id之日曰 曰圓::化晶圓搬送手臂3所載置的已完成檢測: 曰曰,係W3,晶圓挾具4 b所載置的未檢測晶圓係狗; 曰曰圓挾具4c所載置的已完成檢測之晶圓係w5;晶圓挟 …4d所載置的檢測中晶圓係W6 ;從F〇up1〇〇内搬送 至曰曰圓挾具4d的晶圓係W7 ;從F〇upi〇〇内搬送至晶 圓挾具4c的晶圓係W8;且係於第丨檢測部2沁處對= 成探針試驗之晶圓W3與晶圓W4進行交換後,馬上於 第2檢測部21c進行該探針研磨處理。 在藉由晶圓搬送手臂3接收第1檢測部2ib之完成 檢測的晶圓W3,並將未檢測晶圓W4遞給晶圓挾具朴 之時點,由控制部5決定對第2檢測部21c進行探針研 磨處理時,首先,如圖1〇 (a)所示,讓晶圓搬送手臂 3移動至能對基板收納部6〇進行存取的位置(箭頭 加)’而非FOUP100處。其次,如圖1〇 (b)所示,將 第2手臂本體36所支撐的已完成檢測之晶圓W3保持 21 201029088 於基板保持裝置70,同時藉由第!手臂本體%來將載 置於基板收納部60的探針研磨晶圓Wb搬出(箭頭21)。 〇 接著,與第1狀況相同地針對探針研磨晶圓…^^進 行預對位,配合欲實施探針研磨處理的檢測部21c來進 行探針研磨晶圓Wb之方向調整與中心位置定位。然 後,如圖10 (c)所示,讓晶圓搬送手臂3移動至欲^ 施探針研磨處理的檢測部21c之搬入出口 23(參考圖3) 前方(箭頭22)。接著’從需要進行探針研磨處理之檢 測部21C的晶圓挾具4c處將已完成檢測的晶圓w5遞 給晶圓搬送手臂3的第2手臂本體36而搬出,同時將 第1手臂本體35所支撑的探針研磨晶圓.搬入至晶 圓挾具4c (箭頭23)。然後,於檢測部2k中,移動曰 ^挾具而使得載置於晶隨具4e的探針研磨晶曰曰 ^與探針針頭7相接觸錢行探針針頭7的探針研磨 〇 另-方面’當檢測部2^針對探針 :處理之期間’如叫)所示,將 3移動至能對FOUP1〇〇進行存取的位 = 臂本體處36支揮的晶圓w5搬入Foupioo,同 處遞給第1手臂本體35而搬 出(箭碩25)。其次,針對晶圓评7進 =測部21d來進行晶圓W7之方向調整與中心位置定 將晶圓搬送手臂3移動至檢 的搬入出口 23(參考圖3)前方(箭頭 22 201029088 == 之晶圓挾具4d處將已完成檢測的 曰曰圓W6遞給第2手臂本體%而搬出, ^體%所讀的晶圓搬入至晶圓挾具Μ箭^ 然後該檢測部21d便針對晶圓W7開始進行探針 «^>4 ^SC ° 另-方面’當檢測部21d針對晶圓W7進行探針 驗之綱,如圖U⑴所示,係將晶圓搬送 移Huan, 丨 lc's wafer cooker system 4c; 3rd inspection unit 2id day round:: completed wafer transfer arm 3 completed test: 曰曰, system W3, wafer cookware 4 b The undetected wafer dog placed on the buck; the wafer w5 that has been completed in the round cooker 4c; the wafer W6 in the wafer 挟...4d; The wafer system W7 that is transported to the round cooker 4d in the up1〇〇, the wafer system W8 that is transported from the F〇upi〇〇 to the wafer cooker 4c, and the second detection unit 2沁After the probe W3 of the probe test is exchanged with the wafer W4, the probe polishing process is performed in the second detecting unit 21c. When the wafer W3 that has been detected by the first detecting unit 2ib is received by the wafer transfer arm 3 and the undetected wafer W4 is delivered to the wafer, the control unit 5 determines the second detecting unit 21c. When the probe polishing process is performed, first, as shown in FIG. 1(a), the wafer transfer arm 3 is moved to a position (arrow plus) where the substrate storage portion 6A can be accessed, instead of the FOUP 100. Next, as shown in Fig. 1(b), the wafer W3 which has been completed and supported by the second arm body 36 is held 21 201029088 on the substrate holding device 70, and by the first! The arm body % carries out the probe polishing wafer Wb placed on the substrate housing portion 60 (arrow 21). Then, in the same manner as in the first case, the probe polishing wafer is pre-aligned, and the direction of the probe polishing wafer Wb and the center position positioning are performed in association with the detecting portion 21c to be subjected to the probe polishing process. Then, as shown in Fig. 10 (c), the wafer transfer arm 3 is moved to the front of the carry-in port 23 (see Fig. 3) of the detecting portion 21c to be subjected to the probe polishing process (arrow 22). Then, the wafer w5 that has been detected is transferred from the wafer cooker 4c of the detecting unit 21C that requires the probe polishing process to the second arm body 36 of the wafer transfer arm 3, and the first arm body is carried out. The 35 supported probes grind the wafer and move it into the wafer cooker 4c (arrow 23). Then, in the detecting portion 2k, the 挟^ cookware is moved so that the probe grinding crystals placed on the crystal matching tool 4e are in contact with the probe needle 7 and the probe of the probe needle 7 is rubbed. In the aspect of 'detection unit 2^ for the probe: during the processing period', as shown in the figure, move 3 to the position where the access to FOUP1〇〇 = the wafer w5 of the arm body 36 is carried into Foupioo, the same The first arm body 35 is delivered to the first arm body 35 (Arrows 25). Next, the wafer evaluation and the measurement unit 21d are used to adjust the direction of the wafer W7 and the center position to move the wafer transfer arm 3 to the front of the inspection carry-in port 23 (refer to FIG. 3) (arrow 22 201029088 == At the wafer cooker 4d, the completed W0 is sent to the second arm body %, and the wafer read by the body is loaded into the wafer cooker arrow. Then the detecting portion 21d is directed to the crystal. The circle W7 starts the probe «^>4 ^SC ° and the other aspect. When the detecting portion 21d performs the probe inspection on the wafer W7, as shown in Fig. U(1), the wafer is transferred.

=至能對卿卿進行存取的位置(箭頭28),並將 第2手臂本體36所支揮的晶圓呢搬入f⑽刚同 時,由第1手臂本體35從F〇up刚内將晶圓w8搬出 (前頭29)。接著,針對晶圓调進行預對位,在配合 檢測部21C進行晶圓之方向調整與令心位置定位 後’如圖12 (a)所示,將晶圓搬送手臂3移動至已正 在實施探針研磨處理的檢測部21c之搬入出口 23(參考 圖3)前方(箭頭30)。接著,待檢測部…之探^十研 磨處理完紐’從晶圓挾具4e將探針研磨晶圓—遞 給第2手臂本體36而搬出,同時將第i手臂本體%所 支樓的晶ϋ 搬入至晶圓挾具4c (箭頭31 )。缺後, 該檢測部21嗜針對晶圓開始進行探針試驗。 然後’當檢測部21c針對晶圓霄7進行探針試驗之 期間’如圖12⑴所示’係將晶圓搬送手臂3移動至 能對基板收納部6G進行存取的位置(箭頭32),並將 第2手’ 36所支樓的探針研磨晶圓肌搬入至基板收 納部6〇 ’同時藉由第1手臂本體35來將保持於基板保 23 201029088 持裝置70的已完成檢測之晶圓W3取出(箭頭33)。然 後將晶圓W3搬入至foupioo (箭頭34)。藉此,便完 成了中斷當下處理所進行之第2狀況的探針研磨處理 之一連串步驟,之後根據探針試驗處理程式5〇來繼續 進行探針試驗。 剷述第2狀況中,中斷探針試驗處理以進行探針研 磨處理(中斷處理)時,並非將已檢測完成的晶 圓W3放 回FOUP100,而係將其暫時地保持在設置於基板收納 部60上方的基板保持裝置7〇處以開始進行該探針研磨 處理。因此’相較於切已完成檢測的晶圓W3搬入= to the position where the access to Qing Qing can be accessed (arrow 28), and the wafer supported by the second arm body 36 is moved into f(10), and the wafer is transferred from the first arm body 35 from the F〇up W8 moves out (front 29). Then, the wafer alignment is pre-aligned, and after the wafer direction adjustment and the center position positioning are performed by the matching detecting unit 21C, as shown in FIG. 12(a), the wafer transfer arm 3 is moved to the probe. The detection portion 21c of the needle polishing process is carried in front of the outlet 23 (see FIG. 3) (arrow 30). Then, the probe to be detected is transferred from the wafer cooker 4e to the second arm body 36, and the crystal of the i-arm body is branched.搬 Move into the wafer cooker 4c (arrow 31). After the absence, the detecting unit 21 starts the probe test for the wafer. Then, 'when the detecting unit 21c performs the probe test on the wafer cassette 7', the wafer transfer arm 3 is moved to a position (arrow 32) where the substrate storage unit 6G can be accessed, as shown in Fig. 12 (1), and The probe grinding the wafer muscle of the second hand '36 building is carried into the substrate accommodating portion 6 〇 ' while the wafer is held by the first arm body 35 to hold the wafer of the device 70 W3 is taken out (arrow 33). The wafer W3 is then transferred to the foupioo (arrow 34). As a result, a series of steps of the probe polishing process for interrupting the second state of the current process is completed, and then the probe test is continued based on the probe test processing program 5〇. In the second state, when the probe test process is interrupted to perform the probe polishing process (interrupt process), the wafer W3 that has been detected is not returned to the FOUP 100, and is temporarily held in the substrate storage portion. The substrate holding device 7 at the top of 60 is used to start the probe grinding process. Therefore, the wafer W3 is loaded in comparison with the wafer that has been tested.

FOUP100再把探針研磨晶圓Wb搬出之情況,能縮短拍 保持該晶圓W3到將探針研磨晶圓肌搬出為止的的 間。再者’將晶圓W3搬回FOUP1〇〇再進行探針研肩 處理之情況’相對於需要如該晶圓搬送手臂3在未支相 有任何晶圓W的狀態下移動般之無實效的步驟本^When the FOUP 100 moves the probe polishing wafer Wb again, it is possible to shorten the interval between the holding of the wafer W3 and the removal of the probe polishing wafer muscle. Furthermore, 'the case where the wafer W3 is moved back to the FOUP1 and then the probe is processed by the shoulder' is ineffective as it is required to move the arm 3 in the unsupported state without any wafer W. Step this ^

,形態之晶圓搬送手臂3係、在經常切有晶圓W的形 L ’故可望能藉由減少無實效的步驟 斜於前述第1及第2狀況下,因該中斷命令而f汹 内態的探針裝置中’當檢測部2 内载置有已元成檢測之晶圓w的妝 當下處理以使用探針研磨晶圓Wb ^需要= 行維護作業(探針研磨處理)時,係將第;: 所支樓的已完成預對位之未檢測 二本體 備吸著部73的基板保持裝置7〇。因此,=;二 24 201029088 B曰圓W㈣於從晶圓搬送手臂3處接受時的 圓中心位置及方向),故無需再次進行預對位而可直接 =入α因而可縮短該檢测部Μ的待機時 間’亚抑制產1的下降。 又’基板保持裝置%只要是能保持並維持 圓W之姿勢者即可’故可縮小該基板保持裝置7〇的社 構’並可將基板保持裝置70設置於該搬送室1〇等内^In the form of the wafer transfer arm 3, the shape of the wafer W is often cut, so it is expected that the step of reducing the ineffectiveness is oblique to the first and second conditions, and the interrupt command is used. In the probe device of the internal state, when the makeup of the wafer w that has been detected in the detection unit 2 is processed to polish the wafer Wb using the probe, it is necessary to perform maintenance work (probe polishing processing). The substrate holding device 7 of the unsuperposed two-body absorbing portion 73 of the completed pre-alignment of the building is completed. Therefore, =2, 2, 24, 2010, 290, 00, B, 曰, W, (4), the center position and direction of the circle when receiving from the wafer transfer arm 3, so that it is not necessary to perform the pre-alignment again, and can directly enter α, thereby shortening the detection unit. The standby time 'sub-suppression yield 1 drop. Further, the substrate holding device % can be used to hold and maintain the posture of the circle W. Therefore, the substrate holding device 7 can be reduced. The substrate holding device 70 can be installed in the transfer chamber 1 or the like.

多餘空間處。因此,相較於設置該探針研磨處理專用的 晶圓挾具等情況,能抑制該裝置的大型化。 (第2實施形態)參考圖13至圖16來說明有關本 發明第2實施形態的探針裝置。第2實施形態之探針裝 置中,除了該基板保持裝置17〇的結構之外均與第i實 施形態相同,故針對與第!實施形態相同的部;或相對 應部分則賦^相同的符號以進行說明。第1實施形態 中,基板保持裝置70僅能吸著並保持晶圓w,但本實 施形態之基板保持裝f 17G能依需要針對其所保持的 晶圓W來進行預對位。 如圖13、圖14所示,本實施形態係於基板收納部 60之基台61的上方面處設置一設置部168。該設置部 168具有平板169 ’其係在基板收納部6〇的上方區域形 成一水平面,且基板保持裝置17〇係設置於該平板169 j。另外,基板收納部60與平板169之間的距離係設 定為能將載置於該基板收納部6G之最上層棚架之探針 研磨晶圓Wb取出的距離。 25 201029088 171、Π置。。卩168係設置有基板保持裝置17G之挾具部 心"器跨樑172、發光部175等,光成 : = 跨樑-上。挾具部二= 能’並具有^真空吸著)載置於其上之晶圓W的功 功-。垃裟作為吸耆保持該晶圓W而旋轉之迴轉台的 處月,b Η ^ ’該挾具部171係設置於平板169約略中央 a#,孫Γ#/本體%、36朝向基板保持裝置170前進 56目地進入該手臂本體35 (36)的缺口部55、 了會與手臂本體35、36產生干擾的位置處。 處,^ Ί器跨襟172係設置於該設置部168的後方一側 卩係安裝有光感測器173且相對該平板169呈 之曰’發光部175係設置在被挟具部171所保持 肖緣部的下綠置處,且從下方將綠照射 方之晶圓W的周緣部(端部)之區域,再 士 則器173來檢測出穿透晶圓w的光線。因 0 料^感測器173的感測器跨樑172便形成了能 =先173㈣於發糾175上方且較挟具部 所保持之晶圓W更高水平位置的結構。 然後’該基板保持裝置17G可藉由讓該晶 圓搬送手 目曰圖7所不第丨實施形態的吸著部乃實施進退 移動及昇降動作,來將晶圓W遞給挾具部171,並吸著 來的晶81 w°再者’具備有光感測器 ,二 °卩175,同時具有作為旋轉該挾具部171之 的功能,故與爾位機構則目同,能針對該晶 26 201029088 圓w進行預對位。 具有前述基板保持裝置170之本實施形態的探針 裝置係可針對基板保持裝置170所保持的晶圓w進行 預,位,因此在進行探針研磨處理時,例如,將探針研 磨晶圓Wb搬入至第!檢測部21的晶圓挾具4時,且 於第2檢測部21處的探針試驗完成之情況,能針對基 ,保持裝置17G所健的晶ffl W進行觀位,而配合 弟2檢測部21來進行晶圓W方向調整與中心位置定 位,並將該晶圓w搬入至第2檢測部。 搜t #考圖15、圖16來說明有_探針研磨處 且=:另外,該說明中,第1檢測部2ib的晶圓挾 裝置170二2檢測部21C的晶圓挟具係4c ;基板保持 所支持的未檢測晶圓係W1G;晶圓搬送手臂3 之晶圓請1;晶圓挾具4C所载 置的已之晶圓係W12 ;從 Φ 其中,從檢測二= 處理時,M f ㈣進行探針研磨 成(參相8 處所進行的探針試驗係已完 首先如圖15 (a)所示,將晶圓游 至能對基板收納部6〇進行存:搬=手D移動 時,基板保持裝置17。係對其=)進, 預對位,麵基板保縣置170所^=== 27 201029088 手臂二 1整與中心位置的定位。其次,藉由第1 時將μ 7 板保持裝置170處取出晶圓wi〇,同 保持於基 ibW 、、置170上(箭頭42)。然後,如圖15 入出口 晶圓搬送手臂3移動至檢測部21c之搬 ◎Extra space. Therefore, it is possible to suppress an increase in the size of the apparatus as compared with the case of providing a wafer cooker dedicated to the probe polishing process. (Second Embodiment) A probe device according to a second embodiment of the present invention will be described with reference to Figs. 13 to 16 . The probe device of the second embodiment is the same as the i-th embodiment except for the configuration of the substrate holding device 17A. The same components are denoted by the same or the same reference numerals are used for the description. In the first embodiment, the substrate holding device 70 can only suck and hold the wafer w. However, the substrate holding device f 17G of the present embodiment can be pre-aligned with respect to the wafer W held therein as needed. As shown in Figs. 13 and 14, in the present embodiment, an installation portion 168 is provided on the upper surface of the base 61 of the substrate housing portion 60. The setting portion 168 has a flat plate 169' which is formed in a horizontal plane above the substrate housing portion 6A, and the substrate holding device 17 is disposed on the flat plate 169j. Further, the distance between the substrate housing portion 60 and the flat plate 169 is set to a distance at which the probe polishing wafer Wb placed on the uppermost scaffolding of the substrate housing portion 6G can be taken out. 25 201029088 171, set. . The crucible 168 is provided with a cooker center portion of the substrate holding device 17G, a beam 172, a light-emitting portion 175, and the like, and the light is : = straddle-up. The cookware part 2 = can' and has the vacuum work - the work of the wafer W placed thereon. The sputum is the month of the turret that sucks and holds the wafer W, and the faucet portion 171 is disposed at approximately the center a# of the flat plate 169, and the sun Γ#/body%, 36 faces the substrate holding device 170. The advancement 56 meshes into the notch portion 55 of the arm body 35 (36) at a position where it interferes with the arm bodies 35, 36. The 襟 襟 襟 襟 172 is disposed on the rear side of the installation portion 168, and the light sensor 173 is attached to the sash 173. The illuminating portion 175 is disposed on the yoke portion 171. The region of the peripheral edge portion (end portion) of the wafer W on which the green light is irradiated is immersed in the lower portion of the rim portion, and the light passing through the wafer w is detected by the 173. The sensor span 172 of the sensor 173 forms a structure that can be first 173 (four) above the hair correction 175 and at a higher horizontal position than the wafer W held by the cookware portion. Then, the substrate holding device 17G can transfer the wafer W to the cooker portion 171 by performing the advance and retreat movement and the lifting operation of the absorbing portion of the embodiment of Fig. 7 in which the wafer is conveyed. And the crystal that is sucked is 81 w° and then has a light sensor, two 卩 175, and has the function of rotating the cookware part 171, so it is the same as the erg mechanism, and can be aimed at the crystal 26 201029088 Round w for pre-alignment. The probe device of the present embodiment having the substrate holding device 170 can pre-position the wafer w held by the substrate holding device 170. Therefore, when the probe polishing process is performed, for example, the probe is polished to the wafer Wb. Move in to the first! When the wafer cooker 4 of the detecting unit 21 is completed, and the probe test at the second detecting unit 21 is completed, the crystal ff1 W held by the holding device 17G can be observed, and the detecting portion of the second detecting unit 21 can be used. 21, wafer W direction adjustment and center position positioning are performed, and the wafer w is carried into the second detection unit. Search t #图图15, Fig. 16 to illustrate the _probe polishing station and =: In addition, in this description, the first detecting unit 2ib wafer crucible device 170 2 2 detecting portion 21C wafer cooker system 4c; The substrate is held by the undetected wafer system W1G; the wafer transfer arm 3 is wafer 1; the wafer cooker 4C is placed on the wafer system W12; from Φ, when the second detection is performed, M f (4) The probe is ground (the probe test performed at the reference point 8 is completed. First, as shown in Fig. 15 (a), the wafer is swam to the substrate storage unit 6: transfer = hand D When moving, the substrate holding device 17 is placed in the pre-alignment position, and the surface substrate is set to 170. ^=== 27 201029088 The positioning of the arm 2 and the center position. Next, the wafer wi is taken out from the μ 7 board holding device 170 by the first time, and held on the base ibW and the 170 (arrow 42). Then, as shown in Fig. 15, the wafer transfer arm 3 is moved to the detection portion 21c.

Si楚_前方(箭頭43),並藉由晶圓搬 4以將2手臂本體%從檢測部❿之晶圓挾具 .^ 疋檢'則之晶圓Wl2搬出,同時將第1手臂 5所支撐的探針研磨晶圓勸搬入至晶圓挟具& 接著,於檢測部21c中,移動晶圓挟具知 、對载置於晶S1挾具4eJl的晶圓㈣進行探針試驗。 驗的二方二t檢測部21°對晶圓W10進行探針試 驗的賴,如圖15 (e)所示’將晶圓搬送手臂3移 至能對FOUPIOO進行存取的位置(箭頭45),並將第2 手臂本體36所支撑的晶圓W12搬人至咖觸, 藉由第1手臂本體35從;FOUPHH)内將晶圓wu搬出 (箭頭46)。其次,對該晶圓W13進行預對位,在配合 檢測部21b來進行晶圓W13方向調整與中心位置的定 位後,如圖16 (a)所示’將晶圓搬送手臂:移動至: 在進行探針研磨處理之檢測部21b的搬入出口 23 考圖3)前方(箭頭们)。接著,待檢測部之= 研磨處理完成後,從晶圓挾具4b將探針木魏 遞給第2手臂本體36而搬出,同時將第 曰曰圓Wb %上于f本體3 5 所支撐的晶圓和搬入至晶圓挾具4b (箭頭48)。然 28 201029088 後,於檢測部21b處對呤s同„ 然後,如圖:(b=wl開始進行探針試驗。 、」所不’當檢測部2lb對晶圓 W13進行探針試驗的期間,將 十= =娜。進行存取的位 二,= 手臂本體35來將基板保持裝置170 所保持的已完成檢測之晶圓wu取出(箭頭⑹。然Si Chu_front (arrow 43), and by wafer transfer 4, the two arm body % is carried out from the wafer holder of the detecting unit, and the wafer W1 is removed, and the first arm 5 is removed. The supported probe polishing wafer is moved into the wafer cooker & Next, in the detecting portion 21c, the wafer is moved, and the wafer (4) placed on the crystal S1 cooker 4eJ1 is subjected to a probe test. The two-way two-detection unit 21° performs a probe test on the wafer W10, and as shown in FIG. 15(e), the wafer transfer arm 3 is moved to a position where the FOUPIOO can be accessed (arrow 45). The wafer W12 supported by the second arm body 36 is moved to the coffee, and the wafer wu is carried out from the first arm body 35 (FOUPHH) (arrow 46). Next, the wafer W13 is pre-aligned, and after the wafer W13 direction adjustment and the center position are positioned by the matching detecting portion 21b, as shown in FIG. 16(a), the wafer transfer arm is moved to: The loading/unloading port 23 of the detecting portion 21b for performing the probe polishing process is shown in front of FIG. 3) (arrows). Then, after the polishing process is completed, the probe is transferred from the wafer cooker 4b to the second arm body 36, and the second circle Wb% is supported by the f body 35. The wafer is loaded into the wafer cooker 4b (arrow 48). After 28 201029088, the detection unit 21b is the same as 呤 s. Then, as shown in the figure: (b=wl starts the probe test.), when the detection unit 2lb performs the probe test on the wafer W13, Bit == Na. Access bit 2, = arm body 35 to take out the completed wafer wu held by the substrate holding device 170 (arrow (6).

❹ 後’如圖16⑴所示,將晶圓搬送手臂3移動至能對 foupioo進行存取的位置(箭頭51),且將該晶圓㈣ 搬入FOUPHK)(箭頭52)。藉此,便完成了該探針研磨 處理的一串步驟,然後根據探針試驗處理程式50來繼 續進行探針試驗。 削述本實施形態之探針裝置中係藉由具備該基板 保持裝置170 ’而與第〗實施形_樣地能將未檢測晶 圓W遞給晶圓搬送手臂3並維持其姿勢(晶圓中心位 置及方向),故無需再次進行預對位,而可直接搬入至 檢測部21。因此能縮短檢測部21的待機時間,並抑制 產量的下降。再者,基板保持裝置170能對其所保持的 晶圓w進行預對位,故能對其所保持的晶圓w進行方 向改變與中心位置的定位,以配合與原先該晶圓搬送手 臂3待機時所搬入之檢測部21不相同的另一檢測部 21 ’讓晶圓W維持其姿勢地而搬入另一檢測部21。藉 此,可縮短因探針研磨處理所造成其他檢測部的待機時 間,而更能抑制產量的下降。 29 201029088 另外,本實施形態中,基板收納部60係收納有用 作維護用基板的探針研磨晶圓Wb,但本發明實施形 態’亦可收納有用作量測關於各複數個檢測部之探針試 驗誤差的相關晶圓之雉護用基板。 又,本發明實施形態之預對位機構40並非限定於 需搭載在晶圓搬送手臂3處,亦可設置於搬送室内 之晶圓搬送手臂3的移動區域内(能進行存取的區域 内),但因為每次進行預對位時,需將晶圓搬送手臂3 移動至β亥預對位機構處且必需在預對位作業台與手臂3 ❽ 之間進行該晶圓W的傳遞,故以本範例之結構為較佳 之方法。又,將預對位機構4〇設置於搬送室1〇内的位 置例可列舉有,例如在圖2中之搬送室1〇γ方向的中央 邛處,而不會妨礙該晶圓搬送手臂3搬送已完成檢測之 晶圓W的位置或載入埠η ( 12)下方位置等。 又,本實施形態之晶圓搬送手臂3具備2具手臂本 體35 36,但本發明之實施形態,例如基板搬送機構 亦可具備有3具基板支雜件。在具備3具基板支撐級〇 件之情況’該3具巾的2具基板支㈣件伽常地支樓 有晶圓,因此在進行探針研磨處理時,則需將其中1具 基板支撐,、且件所支樓的晶圓卸下,但藉由具備本實施开) 態的各基板保持裝置,無需回到搬運器處便能卸下該晶 圓’故可縮短檢測部21的待機時間並抑制產量的下降。 又,本實施形態之基板保持裝置70、170雖係設置 於該基板收納部60的上方區域,但本發明之實施形態 30 201029088 並非限疋於此,例如只要是_該基板收納部的區域, 亦可《又置於下方區域抑或是左右任—側的區域處。 【圖式簡單說明】 圖1係本實施形態之探針裴置的概略立體圖。 圖2係本實施形態之探針裝置的概略俯視圖。 圖3⑷(b)係本實施形態之探針裝置的概略側視圖。 圖4係本實施形態之晶圓搬送手臂的概略立體圖。 圖5係本實施形態之基板保持裝置的概略立體圖。 圖6係本實施形態之基板保持裝置的概略侧視圖。 圖7(a)(b)(c)係用以說明本實施形態之基板保持裝 置的機能之說明圖。 圖8(a)(b)(c)係用以說明本實施形態之探針研磨處 理的第1狀況之第丨說明圖。 圖9(a)(b)(c)係用以說明本實施形態之探針研磨處 理的第1狀況之第2說明圖。 圖10(a)(b)(c)係用以說明本實施形態之探針研磨處 理的第2狀況之第1說明圖。 圖ll(a)(b)(c)係用以說明本實施形態之探針研磨處 理的第2狀況之第2說明圖。 圖12(a)(b)係用以說明本實施形態之探針研磨處理 的第2狀況之第3說明圖。 圖13係本發明另一實施形態之基板保持裝置的概 略立體圖。 31 201029088 圖14係本發明另一實施形態之基板保持裝置的概 略側視圖。 圖15(a)(b)(c)係用以說明其他實施形態之探針研磨 處理的第1說明圖。 圖16(a)(b)(c)係用以說明其他實施形態之探針研磨 處理的第2說明圖。 【主要元件符號說明】 1 裝載部 2 探針裝置本體 3 晶圓搬送手臂 4、 4b、4c、4d 晶圓挾具 5 控制部 6 探針卡 7 探針針頭 8 下側攝影部 9 上側攝影部 10 搬送室 11 第1載入埠 12 第2載入埠 13、 14 箱體 15 、16 搬入口 21 檢測部 22 框體 23 搬入出口 24 台座單元 25 上板 30 搬送基台 31 迴轉部 32 基台昇降部 33 基台移動部 35 第1手臂本體 36 第2手臂本體 37 導執 38、 39 手臂導件 40 預對位機構 41 挾具部 42 感測器跨樑 43 光感測器 44 光通過部Then, as shown in Fig. 16 (1), the wafer transfer arm 3 is moved to a position where the foupioo can be accessed (arrow 51), and the wafer (four) is carried into FOUPHK) (arrow 52). Thereby, a series of steps of the probe grinding process is completed, and then the probe test is continued in accordance with the probe test processing program 50. In the probe device of the present embodiment, by providing the substrate holding device 170', the undetected wafer W can be transferred to the wafer transfer arm 3 and maintained in the posture (wafer) Since the center position and direction are not required, the pre-alignment is not required again, and it can be directly carried into the detecting unit 21. Therefore, the standby time of the detecting portion 21 can be shortened, and the decrease in the yield can be suppressed. Furthermore, the substrate holding device 170 can pre-align the wafer w held by the substrate holding device 170, so that the wafer w can be oriented and the center position can be positioned to match the original wafer transfer arm 3 . The other detecting unit 21' that is different from the detecting unit 21 that is carried in during standby allows the wafer W to be moved to the other detecting unit 21 while maintaining its posture. As a result, the standby time of other detecting sections caused by the probe grinding process can be shortened, and the decrease in yield can be suppressed more. 29 201029088 In the present embodiment, the substrate storage unit 60 accommodates the probe polishing wafer Wb serving as a maintenance substrate. However, in the embodiment of the present invention, a probe for measuring the plurality of detection portions may be accommodated. Test substrate for the wafer of the test error. Further, the pre-alignment mechanism 40 according to the embodiment of the present invention is not limited to being mounted on the wafer transfer arm 3, and may be provided in a moving area of the wafer transfer arm 3 in the transfer chamber (in an area where access is possible). However, each time the pre-alignment is performed, the wafer transfer arm 3 needs to be moved to the β-pre-alignment mechanism and the transfer of the wafer W must be performed between the pre-alignment table and the arm 3 ,. The structure of this example is preferred. Further, examples of the position in which the pre-alignment mechanism 4 is disposed in the transfer chamber 1A may be, for example, the center of the transfer chamber 1 in the γ direction in FIG. 2, and the wafer transfer arm 3 is not hindered. Transfer the position of the wafer W that has been tested or load it to the position below 埠η (12). Further, the wafer transfer arm 3 of the present embodiment includes two arm bodies 35 36. However, in the embodiment of the present invention, for example, the substrate transfer mechanism may include three substrate support members. In the case of having three substrate support level components, the two substrate supports (four) of the three towels have wafers. Therefore, when performing probe polishing, one of the substrates needs to be supported, The wafers of the building are removed, but by the substrate holding device having the state of the present embodiment, the wafer can be removed without returning to the carrier. Therefore, the standby time of the detecting portion 21 can be shortened. Suppress the decline in production. Further, although the substrate holding devices 70 and 170 of the present embodiment are provided in the upper region of the substrate housing portion 60, the embodiment 30 201029088 of the present invention is not limited thereto, and for example, the area of the substrate housing portion is It can also be placed in the area below or on the side of the left or right side. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic perspective view of a probe device of the embodiment. Fig. 2 is a schematic plan view of the probe device of the embodiment. Fig. 3 (4) and (b) are schematic side views of the probe device of the embodiment. Fig. 4 is a schematic perspective view of the wafer transfer arm of the embodiment. Fig. 5 is a schematic perspective view of the substrate holding device of the embodiment. Fig. 6 is a schematic side view of the substrate holding device of the embodiment. Fig. 7 (a), (b) and (c) are explanatory views for explaining the function of the substrate holding device of the embodiment. Fig. 8 (a), (b) and (c) are explanatory views for explaining the first state of the probe polishing process of the embodiment. Fig. 9 (a), (b) and (c) are second explanatory views for explaining the first state of the probe polishing process of the embodiment. Fig. 10 (a), (b) and (c) are first explanatory views for explaining the second state of the probe polishing process of the embodiment. Figs. 11(a), (b) and (c) are a second explanatory view for explaining a second state of the probe polishing process of the embodiment. Fig. 12 (a) and (b) are third explanatory views for explaining the second state of the probe polishing process of the embodiment. Figure 13 is a schematic perspective view of a substrate holding device according to another embodiment of the present invention. 31 201029088 Fig. 14 is a schematic side view showing a substrate holding device according to another embodiment of the present invention. Fig. 15 (a), (b) and (c) are first explanatory views for explaining the probe polishing process of another embodiment. Fig. 16 (a), (b) and (c) are second explanatory views for explaining the probe polishing process of another embodiment. [Description of main component symbols] 1 Mounting unit 2 Probe device body 3 Wafer transfer arm 4, 4b, 4c, 4d Wafer cooker 5 Control unit 6 Probe card 7 Probe needle 8 Lower side imaging unit 9 Upper side imaging unit 10 Transfer room 11 First load 埠12 Second load 埠13, 14 Case 15 and 16 Carry-in port 21 Detecting unit 22 Frame 23 Carry-in port 24 pedestal unit 25 Upper plate 30 Transfer base 31 Turning unit 32 Abutment Lifting portion 33 Base moving portion 35 First arm body 36 Second arm body 37 Guide 38, 39 Arm guide 40 Pre-alignment mechanism 41 Cooker portion 42 Sensor cross beam 43 Light sensor 44 Light passage portion

32 201029088 50 探針試驗處理程式 51 中斷控制處理程式 55、 56 缺口部 61 基台 65 爪部 71 支撐部 73 吸著部 75 凹部 168 設置部 170 基板保持裝置 172 感測器跨樑 175 發光部 Wb 探針研磨晶圓 60 基板收納部 62、 63、64 載匣組件 70 基板保持裝置 72 腕部 74 真空吸著孔 100 FOUP 169 平板 171 挾具部 173 光感測器 W 晶圓 參 3332 201029088 50 Probe test processing program 51 Interrupt control processing program 55, 56 Notch portion 61 Base 65 Claw portion 71 Support portion 73 Suction portion 75 Concavity portion 168 Installation portion 170 Substrate holding device 172 Sensor cross member 175 Light-emitting portion Wb Probe polishing wafer 60 substrate storage portion 62, 63, 64 carrier assembly 70 substrate holding device 72 wrist portion 74 vacuum suction hole 100 FOUP 169 flat plate 171 cookware portion 173 light sensor W wafer reference 33

Claims (1)

201029088 七、申請專利範圍: 1· 一種探針裝置,係使得載置於載置台之被檢測對象 之基板的電極片與探針卡的探針接觸以測量該基 板之被檢測部的電氣特性,其特徵在於具備: 載入埠,係用以載置收納有複數個基板的搬送容 器; 基板搬送機構’係於該載入埠所載置的該搬送容器 與檢測部的载置台之間進行該基板的遞送,且具有 互相獨=並可自由進退的複數個基板支撐組件,當❹ 其支撐著未檢測之該基板而待機時,會有一個清空 的該基板支樓組件; 搬送罜 '、遷接至該戟入蟑與該檢測部,並 基板搬送機構於其内部移動; μ 構’係設置於該搬送室内,具有能固定基 板並旋轉的迴轉台以及檢測出該迴轉台上 ❹ 的周緣檢知部’以針對自該搬送容器中取;: 基板進行方向與中心部的定位; 基板收納部’係設置於軸送室内並收納 行該檢測部之維護作業的維護用基板; 基板保持裝置,係設置於該搬送 基板搬送機構處接收該基板且進行吸著 著機構;以及 叹耆保持之吸 201029088 2. 3.201029088 VII. Patent application scope: 1. A probe device which contacts an electrode sheet of a substrate to be detected on a mounting table with a probe of a probe card to measure electrical characteristics of a detected portion of the substrate, The present invention is characterized in that: the loading cassette is configured to mount a transfer container in which a plurality of substrates are housed; and the substrate transfer mechanism is disposed between the transfer container and the mounting table of the detecting unit mounted on the loading cassette; Substrate delivery, and having a plurality of substrate support assemblies that are independent of each other and free to advance and retreat, when the substrate is supported by the undetected substrate, there is an empty substrate support assembly; The substrate is transported to the detection unit, and the substrate transfer mechanism is moved inside. The μ structure is disposed in the transfer chamber, and has a turntable capable of fixing the substrate and rotating, and detecting a peripheral edge of the turntable The knowledge unit is taken from the transfer container; the substrate is oriented in the direction and the center portion; the substrate storage portion is disposed in the shaft feed chamber and the detection portion is housed. Maintenance maintenance work substrate; substrate holding means arranged in the conveying system of the substrate transfer mechanism to receive the substrate and the means for sorption; sigh Society and the suction holding 201,029,088 2.3. 4. 5.4. 5. ^行該撿測部維護作業之情況,能將該基板支撑組 件所支撐的該基板保持於該基板保持裝置,同時藉 由該基板支樓組件來將該基板收納部内的該維護 用基板取出而與該載置台上的基板進行交換。 ^申請專利範圍第!項之探針裝置,其中該維護用 基板係專⑽以研磨贿針权探針針綱基板。 如申請專利範㈣1項之探針裝置,其中該基板保 持裝置係鄰设於該基板收納部的上下左右處。 如申請專利範圍第2項之探針裝置,童中爷某 持裝置係鄰設於該基板收納部的上下左右 如申請專利範圍第…項中任—項之探針裝置, 其δ又置有複數個該檢測部,而該控制部係在當藉由 該基板支樓組件來將由帛丨檢測部完成檢測後的 該基板搬出時,且於第2檢測部發生了需中斷當下 處理以進行該維護作業之情況,能將該基板支二組 件所支撐之已完成檢測的該基板保持於該基板保 持裝置’以進行該維護作業。 6.如申請專利範圍第5項之探針裝置,其中除了前述 預對位機構之外,更於該基板保持裝置處設置有預 對位機構,且該基板保持裝置具有預對位用迴轉台 的功能,能針對保持於其上之該基板進行預對位。 35In the case of the maintenance operation of the detecting unit, the substrate supported by the substrate supporting unit can be held by the substrate holding device, and the maintenance substrate in the substrate receiving portion can be taken out by the substrate branch assembly. Exchange with the substrate on the mounting table. ^ Apply for patent scope! The probe device of the item, wherein the maintenance substrate is exclusively used (10) to grind the bristle needle probe needle substrate. The probe device of claim 1, wherein the substrate holding device is disposed adjacent to the upper, lower, left and right sides of the substrate housing portion. For example, in the probe device of the second application of the patent scope, the holding device of the Tongzhongye is adjacent to the probe device of the upper and lower sides of the substrate storage portion, as in the scope of the patent application scope, and the δ is further provided. a plurality of the detecting portions, wherein the control unit removes the substrate after the detection by the flaw detecting unit by the substrate branch unit, and the second detecting unit needs to interrupt the current processing to perform the In the case of maintenance work, the substrate supported by the substrate support assembly can be held in the substrate holding device to perform the maintenance work. 6. The probe device of claim 5, wherein in addition to the aforementioned pre-alignment mechanism, a pre-alignment mechanism is provided at the substrate holding device, and the substrate holding device has a pre-alignment rotary table The function is to pre-align the substrate held on it. 35
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI773187B (en) * 2021-03-12 2022-08-01 旭東機械工業股份有限公司 Method and system for inspecting a wafer cassette

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5384270B2 (en) * 2009-09-21 2014-01-08 東京エレクトロン株式会社 loader
US9335347B2 (en) * 2012-09-10 2016-05-10 Advantest Corporation Method and apparatus for massively parallel multi-wafer test
CN102928761B (en) * 2012-11-20 2016-05-11 上海华虹宏力半导体制造有限公司 Wafer sort system and crystal round test approach
US10276418B2 (en) 2013-12-31 2019-04-30 Shanghai Micro Electronics Equipment (Group) Co., Ltd. Silicon wafer pre-alignment device and method therefor
JP6551655B2 (en) * 2015-03-31 2019-07-31 株式会社東京精密 Prober
CN105097592B (en) * 2015-06-17 2018-01-26 北京七星华创电子股份有限公司 The silicon chip distribution optoelectronic scanning method and device of semiconductor equipment bearing area
KR102503282B1 (en) * 2015-11-06 2023-02-24 세메스 주식회사 Probe station
CN105575841B (en) * 2015-12-15 2019-08-02 北京中电科电子装备有限公司 A kind of wafer measuring device
CN107785299A (en) * 2016-08-30 2018-03-09 上海微电子装备(集团)股份有限公司 A kind of silicon chip pick device
CN106807650A (en) * 2017-01-22 2017-06-09 江苏安纳金机械有限公司 A kind of discharge and recharge and the automatic material picking machine and its operation method of dormancy test
WO2018154941A1 (en) * 2017-02-22 2018-08-30 新東工業株式会社 Test system
CN107942222A (en) * 2017-11-21 2018-04-20 德淮半导体有限公司 Tester table and test method
SG11202010365TA (en) * 2018-04-27 2020-11-27 Tokyo Electron Ltd Substrate processing system and substrate processing method
JP7349240B2 (en) * 2018-10-05 2023-09-22 東京エレクトロン株式会社 Board warehouse and board inspection method
JP2020096028A (en) * 2018-12-11 2020-06-18 東京エレクトロン株式会社 Inspection device and inspection method
JP7274350B2 (en) * 2019-05-28 2023-05-16 東京エレクトロン株式会社 Conveyance system, inspection system and inspection method
CN117192342B (en) * 2023-11-08 2024-02-13 深圳市森美协尔科技有限公司 probe station

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56133843A (en) * 1980-03-21 1981-10-20 Nec Corp Probe grinder for probe card
JP3634138B2 (en) * 1998-02-23 2005-03-30 株式会社 日立ディスプレイズ Liquid crystal display
JP2000164649A (en) * 1998-11-26 2000-06-16 Tokyo Seimitsu Co Ltd Needle cleaning mechanism for prober
JP4496456B2 (en) * 2001-09-03 2010-07-07 軍生 木本 Prober equipment
JP2003168707A (en) * 2001-11-30 2003-06-13 Tokyo Electron Ltd Probe device
JP2006128451A (en) * 2004-10-29 2006-05-18 Seiko Epson Corp Prober and its probe maintenance method, process for fabricating semiconductor device
JP4166813B2 (en) * 2006-05-11 2008-10-15 東京エレクトロン株式会社 Inspection apparatus and inspection method
JP5120017B2 (en) * 2007-05-15 2013-01-16 東京エレクトロン株式会社 Probe device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI773187B (en) * 2021-03-12 2022-08-01 旭東機械工業股份有限公司 Method and system for inspecting a wafer cassette

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