JP2006128451A - Prober and its probe maintenance method, process for fabricating semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a prober performing highly reliable probing by having stabilized point state of a probe while prolonging the lifetime of a probe card, and to provide a maintenance method of the probe and a process for fabricating a semiconductor device. <P>SOLUTION: The prober comprises a controllable movement wafer stage 12 for detecting the position of a semiconductor wafer WF while supporting, a probe card 14 having a circuit board with a plurality of probes 141 extending from predetermined portions and delivering/receiving a signal by touching each probe 141 to each electrode terminal of an IC chip region in the semiconductor wafer WF, and a maintenance stage 151 with movement in X, Y and Z directions being controlled independently. The probe is further provided with a maintenance mechanism for bringing the probes 141 close to a more normal state, respectively, by moving the stage 151 arranged with a polishing member 152 directly under the arrangement of proves 141 of the probe card 14 from a predetermined retreat region, and a control section 16 performing signal control of polishing operation. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a prober device, a probe maintenance method, and a semiconductor device manufacturing method for measuring electrical characteristics by bringing a probe into mechanical contact with an electrode portion of an LSI chip in a wafer state.

  The prober device is used for testing each chip area in a wafer state before an assembly process of LSI manufacturing. As is well known, the prober device inputs a test signal to the electrode portion (the upper surface of the Al pad, Au bump, solder bump, etc.) of the chip area, which is the measurement area, via the probe of the probe card. Further, a result signal is acquired from the electrode part and evaluated. The probe needle of the probe card is made of a material (such as tungsten or beryllium) that is harder than the electrode portion in the chip region.

  The prober device applies an appropriate pressure when contacting the probe of the probe card and the electrode portion of the chip area so that the probe bends and slides (appropriate overdrive). As a result, when the number of measurements is repeated, foreign matter such as shavings on the electrode side adheres to the tip of the probe. Alternatively, the lengths of the probe tips are not aligned due to wear, deformation, or the like. Therefore, maintenance such as cleaning and polishing of the probe is necessary in order to prevent a problem in the electrical contact state.

Conventionally, the prober device stops the probing and performs the maintenance work when the probe tip of the probe card has reached the point where it interferes with the measurement. As a result, the substantial operating rate is prevented from being reduced as much as possible. Various ideas have been considered to shorten the maintenance work and return to the original probing as soon as possible. For example, it is a technique that can clean the probe while the wafer is being held while probing the wafer. A spacer for holding the cleaning tool on the upper surface is detachably attached to the main chuck holding the wafer. The spacer is operated by operation control of the main chuck, and the probe of the probe card is cleaned with a cleaning tool on the upper surface (see, for example, Patent Document 1).
Japanese Patent Laid-Open No. 11-54574 (page 5, FIG. 1 and FIG. 4)

  The probe cleaning of the probe card mainly removes foreign matters adhering to the tip of the probe, and there is a concern that the shape of the tip of the probe may deteriorate. As the probe tip diameter increases, it becomes difficult to handle electrodes with a fine pitch. As a result, probing mistakes are likely to occur. Therefore, it is easy to damage the electrode, and the number of defective products increases. As a countermeasure, a method is adopted in which the probe card is removed from the prober device at regular intervals at an early stage, and polishing is adjusted separately. Such card maintenance requires a considerable amount of time. In addition, the card life is significantly shortened because it is early. Therefore, the prober device needs to always prepare a replacement probe card so as not to lower the substantial operation rate.

  The present invention has been made in consideration of the above-described circumstances. The prober device and the probe maintenance are capable of probing with high reliability by extending the probe card life and having a stable probe tip state. A method and a method for manufacturing a semiconductor device are provided.

  A prober apparatus according to the present invention includes a wafer stage that supports and detects a position of a semiconductor wafer and can be moved and a circuit board in which a plurality of probes extend from a predetermined portion, and each of the probes in the semiconductor wafer. It has a probe card that sends and receives signals by contacting each electrode terminal in the IC chip area, and a maintenance stage whose movement in the X, Y, and Z-axis directions is independently controlled. A maintenance mechanism that moves the probe card from a predetermined avoidance region directly below the probe array of the probe card and performs a polishing operation, and a control unit that performs signal control of at least the polishing operation of the maintenance mechanism And including.

  The prober apparatus according to the present invention has a maintenance stage in the prober apparatus. Since movements in the X, Y, and Z axis directions are independently controlled, fine and delicate operations are possible, and excellent polishing of fine probes is possible. The tip diameter of the probe does not increase due to the polishing of the probe.

  A prober apparatus according to the present invention includes a wafer stage that supports and detects a position of a semiconductor wafer and can be moved and a circuit board in which a plurality of probes extend from a predetermined portion, and each of the probes in the semiconductor wafer. A probe card that transmits and receives signals by contacting each electrode terminal in the IC chip area, and a maintenance stage in which movement in the X, Y, and Z-axis directions is independently controlled. An image recognition mechanism and a polishing member capable of state inspection are provided, moved from a predetermined avoidance area directly below the probe array of the probe card, and each of the probes is subjected to a polishing operation according to the state inspection of the probe. A maintenance mechanism that brings the operation closer to a normal state, and a control unit that controls at least a polishing operation of the maintenance mechanism.

  The prober apparatus according to the present invention has a maintenance stage in the prober apparatus. Since movements in the X, Y, and Z axis directions are independently controlled, fine and delicate operations are possible, and excellent polishing of fine probes is possible. The tip diameter of the probe does not increase due to the polishing of the probe. Furthermore, an image recognition mechanism is provided on the maintenance stage, so that the state of the probe can be inspected before polishing. As a result, the polishing operation according to the probe state inspection can be controlled, and high-precision and lean probe maintenance can be expected.

In the prober device according to the present invention, the probe of the probe card is efficiently restored to a highly accurate state with any of the following features.
The image recognition mechanism is capable of at least measuring a predetermined tip diameter and length of the probe as a state inspection of the probe, or inspecting whether there is an abnormality in each state of the probe. The prober apparatus according to claim 2, wherein the control information is acquired by the control unit and reflected in the control of the polishing operation.
The polishing member is a plurality of fibrous polishing sheets or mesh-like polishing sheets divided into predetermined regions, and the maintenance mechanism varies the polishing region to which the probe is applied each time.
The polishing member is a plurality of fibrous polishing sheets or mesh-like polishing sheets having different roughness divided into predetermined regions, and the maintenance mechanism changes the polishing region to which the probe is applied each time.
In the maintenance mechanism, at least movement of the stage in the Z-axis direction can be controlled to change.
The polishing member is fixed by a method selected from a cassette that can be attached to and detached from the stage, vacuum suction, and attachment with a tape that can be easily attached and detached.
The polishing member is a set replacement part, and a contact port with the outside is provided in the vicinity of a predetermined avoidance area of the stage in the maintenance mechanism, and the set replacement part can be replaced from the contact port.

  The probe maintenance method for a prober apparatus according to the present invention includes a positioning step in which a semiconductor wafer is supported and aligned by a movable wafer stage of the prober apparatus, and each IC of the semiconductor wafer using a probe card of the prober apparatus. In order to send and receive at least signals related to electrical characteristic inspection to the chip area, the probe inspection process in which the probe is brought into contact with each terminal electrode of the selected IC chip area and movement in the X, Y, and Z axis directions are independent. The controlled maintenance stage deploys at least a polishing member and waits in a predetermined avoidance area in the prober apparatus, and the probe inspection process ends for each IC chip area, and the next semiconductor is replaced. Until the wafer is supported and aligned by the stage, the maintenance stage is Serial including, a maintenance step of bringing the each of the probe to a more normal state by polishing operation by moving the probe sequence immediately below the probe card.

  According to the probe maintenance method of the prober apparatus according to the present invention, the probe card is vacant during the period from the completion of the probe inspection process to the replacement of the next semiconductor wafer or the wafer alignment operation. It becomes a state. Using this time effectively, the maintenance stage is moved directly below the probe card probe array to perform the polishing operation. Although it is a short period, since the maintenance frequency (interval) becomes dense, it is always easy to obtain a stable needle tip state. Thereby, maintenance of the probe card can be achieved without degrading the original performance of the prober device. Further, the tip diameter of the probe does not increase due to the polishing of the probe. Thereby, it is easy to replace the probe card after waiting for the card life of the probe card.

In the probe maintenance method of the prober apparatus according to the present invention, more accurate probe maintenance is realized with any of the following features.
The maintenance stage further includes an image recognition mechanism capable of inspecting the state of the probe, and performing a polishing operation according to the state inspection of the probe in the maintenance step.
The maintenance step is selected from at least the amount of movement in the X, Y, and Z axis directions, the movement speed in the Z axis direction, the number of polishing times, the polishing time, and the on-stage polishing region as the polishing operation of the probe. Control conditions can be set.

  The semiconductor device manufacturing method according to the present invention includes a positioning step in which a semiconductor wafer is supported and aligned by a movable wafer stage of a prober device, and each IC chip region of the semiconductor wafer using a probe card of the prober device. In order to exchange at least signals related to electrical characteristic inspection, the probe inspection process in which the probe is brought into contact with each terminal electrode of the selected IC chip region and movement in the X, Y, and Z axis directions are independently controlled. The maintenance stage is equipped with at least a polishing member and waits in a predetermined avoidance area in the prober apparatus, and the probe inspection process is completed for each IC chip area. Until the stage is supported and aligned by the stage, the maintenance stage is moved to the probe car. And a maintenance process for bringing the probes closer to a normal state by moving to a position immediately below the probe array and performing a polishing operation, and the probe inspection process is performed through the maintenance process. It is characterized by eliminating contact system defects.

  According to the semiconductor device manufacturing method of the present invention, the probe of the probe card is efficiently polished until the semiconductor wafer to be inspected is replaced and the next semiconductor wafer is aligned. Thereby, the maintenance frequency (interval) of the probe card becomes dense. Therefore, the probe card can perform an electrical characteristic test with a stable probe tip. Inspection accuracy is improved, contact system failures caused by the probe are suppressed, and the yield is improved.

BEST MODE FOR CARRYING OUT THE INVENTION

FIG. 1 and FIG. 2 are block diagrams showing the main configuration of the prober device according to the first embodiment of the present invention, respectively. FIG. 1 shows a main part viewed from above, and FIG. 2 shows a main part viewed from the side. Show.
5 and 6 are schematic views showing a polishing member when polishing the probe of the probe card. This will be described with reference to these drawings.

  The prober apparatus 10 includes a wafer transfer mechanism 11, a wafer stage 12, an alignment mechanism 13, a probe card 14, a maintenance mechanism 15, and a control unit 16. The prober device 10 and the tester 20 are transmitted with signals through a test head 21 and a measurement signal cable 22. In FIG. 1, the configuration beyond the probe card 14 is omitted.

  The wafer stage 12 can detect the position of the semiconductor wafer WF by chucking it, and can be controlled to move in the X, Y, Z axes, and θ directions. These are commanded by the control unit 16. Rx and Ry are guide rails. The alignment optical system 121 is used for position recognition of the probe card 14.

  The alignment mechanism 13 can slide on the wafer stage 12 using the guide rail Rs. The alignment mechanism 13 includes an alignment bridge 132 including various lenses (not shown), a CCD camera 131, and the like, performs optical system alignment on the semiconductor wafer WF supported on the wafer stage 12, and sends coordinate data to the control unit 16. send.

  The probe card 14 is supported by the measurement board 17. The measurement board 17 is connected to the test head 21 via a connection ring 18 including pogo pins and the like. The probe card 14 has each probe 141 extending from the substrate opening. The probe card 14 transmits and receives signals related to probing when each probe 141 comes into contact with each terminal electrode (pad, bump, etc.) in a predetermined IC chip area on the semiconductor wafer WF.

  The maintenance mechanism 15 includes a maintenance stage 151 in which movement in the X, Y, and Z axis directions is independently controlled. The stage 151 is provided with a polishing member 152. The stage 151 moves from a predetermined avoidance region to a position immediately below the probe 141 array of the probe card 14 and performs a polishing operation. Thereby, each of the probe 141 is brought closer to a normal state.

  The polishing member 152 employs a fibrous polishing sheet such as carbon or ceramic, or a mesh-like polishing sheet (mesh sheet) (see FIGS. 5 and 6). At the time of polishing, the operation is mainly in the Z-axis direction. As for the stage movement in the Z-axis direction, it is desirable that the movement speed can be changed and controlled. Foreign matter (shavings) adhering to the tip region of the probe is easily removed, and the polishing operation is not performed so as to impair the leading edge shape. Polishing control can be performed so that the tip diameter of the probe 141 does not increase. The movement in the X and Y axis directions is merely used for moving the polishing area. As shown by 152 in FIG. 1, the polishing member 152 is composed of a plurality of fibrous polishing sheets or mesh-like polishing sheets divided into predetermined regions. You may combine the abrasive sheet from which roughness differs, respectively. A polishing sheet can also be selected according to the degree of polishing.

The polishing member 152 is fixed by a method selected from a cassette that can be attached to and detached from the stage 151, vacuum suction, and attachment with a tape that can be easily attached and detached.
The polishing member 152 is a set replacement part. A contact port 25 with the outside is provided near a predetermined avoidance area of the stage 151 in the maintenance mechanism 15, and the set replacement part (polishing member 152) can be replaced from the contact port 25. It is like that.

  The control unit 16 controls the polishing operation in the maintenance mechanism 15. At least a control condition selected from the movement amount in the X, Y, and Z axis directions, the movement speed in the Z axis direction, the number of polishing times, the polishing time, and the polishing area on the stage 151 in the maintenance stage 151 can be set.

  According to the configuration of the above embodiment, the prober device 10 has the maintenance stage 151. Since movements in the X, Y, and Z axis directions are independently controlled, fine and delicate operations are possible, and excellent polishing of fine probes is possible. The probe 141 of the probe card 14 is polished mainly in the Z-axis direction. Thereby, polishing control can be performed so that the tip diameter of the probe 141 does not increase. This contributes to prevention of inspection errors and accurate probing.

  FIG. 3 and FIG. 4 are block diagrams showing the main configuration of the prober device according to the second embodiment of the present invention, respectively, FIG. 3 shows the main part viewed from above, and FIG. 4 shows the main part viewed from the side. Show. These FIG. 3 and FIG. 4 are based on FIG. 1 and FIG. Similar parts are denoted by the same reference numerals. FIG. 7 is a schematic view showing the main part of the probe of the probe card.

  In this embodiment, an image recognition mechanism 24 capable of inspecting the state of the probe 141 is further provided on the maintenance stage 151. The image recognition mechanism 24 includes various lenses (not shown) and a CCD camera, and can measure the diameter and length of a predetermined region at the tip of the probe 141. For example, the tip of the probe 141 is focused on the circular shape, and the control unit 16 compares it with the set standard or reference data. Thereby, measurement of the tip diameter φ of the probe 141 and measurement of the length L to the shaft bending portion are possible (see FIG. 7). In addition, it is possible to inspect whether or not the tip of the needle is aligned on the same plane and the adhesion of foreign matter. Other configurations are the same as those in the first embodiment.

  The measurement value information obtained by the image recognition mechanism 24 is used by the control unit 16 for controlling the maintenance mechanism. This is reflected in the setting of the control conditions such as the movement amount in the X, Y and Z axis directions, the Z axis direction movement speed, the number of polishing times, the polishing time, the polishing area on the stage 151, and the like. As the probe 141 is used, it is important to keep the variation of the tip diameter φ within a predetermined range even if the length L to the shaft bending portion is shortened within an allowable range. The above polishing control conditions may be set with the goal of maintaining the probe 141 in this way.

According to the configuration of the above embodiment, the prober device 10 has the maintenance stage 151. Since movements in the X, Y, and Z axis directions are independently controlled, fine and delicate operations are possible, and excellent polishing of fine probes is possible. The probe 141 of the probe card 14 is polished mainly in the Z-axis direction. Thereby, polishing control can be performed so that the tip diameter of the probe 141 does not increase. Furthermore, an image recognition mechanism 24 is provided on the stage 151, and the state of the probe 141 can be inspected before polishing. As a result, the polishing operation according to the state inspection of the probe 141 can be controlled, and maintenance of the probe 141 with high accuracy and no waste can be expected.
In the state inspection of the probe 141 by the image recognition mechanism 24, if there is a fear that the tip of the needle may not be aligned on the same plane, and there is a prediction, a polishing operation in the X and Y axis directions, which is fine movement, can be considered.

FIG. 8 is a block diagram showing the main part of the probe maintenance method for the prober apparatus according to the third embodiment of the present invention, which is similar to FIG.
A semiconductor wafer that has been inspected after probing is unloaded by the wafer transfer mechanism 11 and replaced with the next semiconductor wafer WF. During this time, since the probe card 14 is empty, the maintenance mechanism 15 works.

  The maintenance mechanism 15 waits in a predetermined avoidance area in the prober device 10, but at this time, it moves immediately below the arrangement of the probes 141 of the probe card 14 as indicated by an arrow A 1 by the control signal S 1 of the control unit 16. A probe state inspection using the image recognition mechanism 24 is performed by the control signal S2, an appropriate polishing recipe is selected by the control unit 16, and a control signal is transmitted. The maintenance mechanism 15 uses the fine movement of the polishing member 152 and the stage 151 to polish the probe 141 with high accuracy. Meanwhile, the next semiconductor wafer WF is set in the prober device 20. That is, the semiconductor wafer WF is supported by the movable wafer stage 12 via the wafer transfer mechanism 11. Thereafter, the control unit 16 generates a control signal S3, and alignment is performed by the alignment mechanism 13 that has been slid onto the wafer stage 12 as indicated by an arrow A2, and coordinate data is determined. Thus far, the maintenance of the probe 141 in the probe card 14 is completed, and the maintenance mechanism 15 again waits in a predetermined avoidance area in the prober device 10 (see FIG. 4).

  According to the method of the above embodiment, the probe card 14 is in an empty state during the period from the completion of the probe inspection process to the replacement of the next semiconductor wafer WF and the subsequent alignment of the semiconductor wafer WF. Become. By effectively utilizing this time, the maintenance stage 151 is moved directly below the probe card probe array to perform a polishing operation. Although it is a short period, since the maintenance frequency (interval) becomes dense, it is always easy to obtain a stable needle tip state. Thereby, maintenance of the probe card can be achieved without degrading the original performance of the prober apparatus 10. Further, the probe tip diameter is not increased by polishing the probe 141. Thereby, it is easy to replace the probe card after waiting for the card life of the probe card. Note that depending on the probe state inspection using the image recognition mechanism 24, the inspection result may be good and the polishing operation may be omitted. This is a measure to prevent the card life from being shortened by excessive polishing.

  A semiconductor wafer probe-inspected using the probe maintenance method of the prober apparatus is subjected to a probe inspection process after undergoing a state inspection of the probe 141 or a maintenance process. It is possible to achieve a method for manufacturing a semiconductor device in which a contact system failure caused by a probe is eliminated and the yield is improved.

  As described above, according to each embodiment and method of the present invention, a maintenance stage is provided in the prober apparatus. Since the stage is independently controlled for movement in the X, Y, and Z-axis directions, it is possible to perform fine and delicate operations and is excellent in polishing fine probes. The tip diameter of the probe does not increase due to the polishing of the probe. Furthermore, if an image recognition mechanism is provided on the maintenance stage, the state of the probe can be inspected before polishing. As a result, the polishing operation according to the probe state inspection can be controlled, and high-precision and lean probe maintenance can be expected. Further, it contributes to eliminate the contact system failure caused by the probe in each IC chip region in the semiconductor wafer. This has a positive effect on yield. As a result, it is possible to provide a prober device, a probe maintenance method, and a semiconductor device manufacturing method that extend the life of the probe card, have a stable probe tip state, and perform highly reliable probing.

The 1st block diagram which shows the principal part structure of the prober apparatus which concerns on 1st Embodiment. The 2nd block diagram which shows the principal part structure of the prober apparatus which concerns on 1st Embodiment. The 1st block diagram which shows the principal part structure of the prober apparatus which concerns on 2nd Embodiment. The 2nd block diagram which shows the principal part structure of the prober apparatus which concerns on 2nd Embodiment. The 1st schematic diagram which shows the grinding | polishing member when grind | polishing the probe of a probe card. The 2nd schematic diagram which shows the grinding | polishing member when grind | polishing the probe of a probe card. FIG. 3 is an overview diagram showing a main part of a probe of a probe card. The block block diagram of the principal part of the probe maintenance method which concerns on 3rd Embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Prober apparatus, 11 ... Wafer conveyance mechanism, 12 ... Wafer stage, 13 ... Alignment mechanism, 14 ... Probe card, 141 ... Probe, 115 ... Maintenance mechanism, 151 ... Maintenance stage, 152 ... Polishing member, 16 ... Control part 132 ... Shaft bending part 14 ... Data storage part 17 ... Measurement board 18 ... Connection ring 20 ... Tester 21 ... Test head 22 ... Measurement signal cable 221 ... Wafer stage 222 ... Temperature control 223 position detector 23 alignment mechanism 24 image recognition mechanism 25 contact port WF semiconductor wafer

Claims (12)

A wafer stage that supports and detects the position of a semiconductor wafer and is capable of movement control;
A probe card that has a circuit board in which a plurality of probes extend from a predetermined portion, and each of the probes contacts a respective electrode terminal of an IC chip region in the semiconductor wafer;
It has a maintenance stage in which movement in the X, Y, and Z-axis directions is independently controlled, and the stage is provided with a polishing member and moved from a predetermined avoidance area directly below the probe array of the probe card to perform a polishing operation. A maintenance mechanism that brings each of the probes closer to a normal state,
A control unit that performs signal control of at least the polishing operation of the maintenance mechanism;
Prober device including A wafer stage that supports and detects the position of a semiconductor wafer and is capable of movement control;
A probe card that has a circuit board in which a plurality of probes extend from a predetermined portion, and each of the probes contacts a respective electrode terminal of an IC chip region in the semiconductor wafer;
The probe has a maintenance stage in which movement in the X, Y, and Z axis directions is independently controlled, and the stage is provided with an image recognition mechanism and a polishing member capable of inspecting the state of the probe, and the probe is removed from a predetermined avoidance region A maintenance mechanism that moves immediately below the probe array on the card, and brings the probes closer to normal by performing a polishing operation according to the state inspection of the probes;
A control unit that performs signal control of at least the polishing operation of the maintenance mechanism;
Prober device including The image recognition mechanism is capable of at least measuring a predetermined tip diameter and length of the probe as a state inspection of the probe, or inspecting whether there is an abnormality in each state of the probe. The prober apparatus according to claim 2, wherein the control information is acquired by the control unit and reflected in the control of the polishing operation. 4. The polishing member according to claim 1, wherein the polishing member is a plurality of fibrous polishing sheets or mesh-like polishing sheets divided into predetermined regions, and the maintenance mechanism varies a polishing region to which the probe is applied each time. Prober equipment. The polishing member is a plurality of fibrous polishing sheets or mesh-like polishing sheets having different roughness divided into predetermined regions, and the maintenance mechanism changes the polishing region to which the probe is applied each time. The prober device described in one. The prober device according to any one of claims 1 to 5, wherein in the maintenance mechanism, at least movement of the stage in the Z-axis direction can be controlled to change. The polishing member is fixed by a method selected from a cassette that can be attached to and detached from the stage, vacuum suction, and attachment with a tape that can be easily attached and detached. The described prober device. The polishing member is a set replacement part, and a connection port with the outside is provided near a predetermined avoidance area of the stage in the maintenance mechanism, and the set replacement part can be replaced from the connection port. The prober device according to claim 1. A positioning step in which a semiconductor wafer is supported and aligned by a movable wafer stage of a prober device;
A probe for bringing a probe into contact with each terminal electrode of a selected IC chip area in order to transfer at least signals relating to electrical characteristic inspection to each IC chip area of the semiconductor wafer using a probe card of the prober device Inspection process;
A stage for maintenance in which movement in the X, Y, and Z-axis directions is independently controlled and at least a polishing member is provided and waits in a predetermined avoidance area in the prober device;
The maintenance stage is located immediately below the probe array of the probe card until the probe inspection process is completed for each IC chip region and the next semiconductor wafer is supported and aligned by the stage by replacement. A maintenance step to move each of the probes closer to a normal state by moving and polishing; and
Probe maintenance method for prober equipment including The probe of the prober apparatus according to claim 9, further comprising an image recognition mechanism capable of inspecting the state of the probe in the maintenance stage, and performing a polishing operation according to the state inspection of the probe in the maintenance step. Maintenance method. The maintenance step is selected from at least the amount of movement in the X, Y, and Z axis directions, the movement speed in the Z axis direction, the number of polishing times, the polishing time, and the on-stage polishing region as the polishing operation of the probe. 11. The probe maintenance method for a prober device according to claim 9 or 10, wherein control conditions can be set. A positioning step in which a semiconductor wafer is supported and aligned by a movable wafer stage of a prober device;
A probe for bringing a probe into contact with each terminal electrode of a selected IC chip area in order to transfer at least signals relating to electrical characteristic inspection to each IC chip area of the semiconductor wafer using a probe card of the prober device Inspection process;
A stage for maintenance in which movement in the X, Y, and Z-axis directions is independently controlled and at least a polishing member is provided and waits in a predetermined avoidance area in the prober device;
The maintenance stage is located immediately below the probe array of the probe card until the probe inspection process is completed for each IC chip region and the next semiconductor wafer is supported and aligned by the stage by replacement. A maintenance step to move each of the probes closer to a normal state by moving and polishing; and
Including
A method of manufacturing a semiconductor device, wherein the probe inspection step is performed through the maintenance step to eliminate a contact system defect caused by the probe.

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