TWI465838B - 多色調光罩、光罩基底及圖案轉印方法 - Google Patents
多色調光罩、光罩基底及圖案轉印方法 Download PDFInfo
- Publication number
- TWI465838B TWI465838B TW098132359A TW98132359A TWI465838B TW I465838 B TWI465838 B TW I465838B TW 098132359 A TW098132359 A TW 098132359A TW 98132359 A TW98132359 A TW 98132359A TW I465838 B TWI465838 B TW I465838B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- light
- semi
- transmissive
- transmittance
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 31
- 238000012546 transfer Methods 0.000 title claims description 7
- 238000002834 transmittance Methods 0.000 claims description 124
- 239000000758 substrate Substances 0.000 claims description 76
- 230000008859 change Effects 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 28
- 239000011651 chromium Substances 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 229910052750 molybdenum Inorganic materials 0.000 claims description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- 239000011733 molybdenum Substances 0.000 claims description 11
- 229910052758 niobium Inorganic materials 0.000 claims description 11
- 239000010955 niobium Substances 0.000 claims description 11
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 432
- 239000010410 layer Substances 0.000 description 35
- 229910016006 MoSi Inorganic materials 0.000 description 28
- 238000005530 etching Methods 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 239000007789 gas Substances 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000985 reflectance spectrum Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 238000000411 transmission spectrum Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- 229910052746 lanthanum Inorganic materials 0.000 description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000005001 laminate film Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 230000004075 alteration Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- DSAWYFXJVXQFIV-UHFFFAOYSA-N aminoazanium;fluoride Chemical compound [F-].[NH3+]N DSAWYFXJVXQFIV-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005502 peroxidation Methods 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000000475 sunscreen effect Effects 0.000 description 1
- 239000000516 sunscreening agent Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008247271A JP5121020B2 (ja) | 2008-09-26 | 2008-09-26 | 多階調フォトマスク、フォトマスクブランク、及びパターン転写方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201017328A TW201017328A (en) | 2010-05-01 |
| TWI465838B true TWI465838B (zh) | 2014-12-21 |
Family
ID=42209448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098132359A TWI465838B (zh) | 2008-09-26 | 2009-09-24 | 多色調光罩、光罩基底及圖案轉印方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5121020B2 (enrdf_load_stackoverflow) |
| KR (2) | KR101156658B1 (enrdf_load_stackoverflow) |
| TW (1) | TWI465838B (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5917020B2 (ja) * | 2010-06-29 | 2016-05-11 | Hoya株式会社 | マスクブランクおよび多階調マスクの製造方法 |
| JP6761255B2 (ja) * | 2016-02-15 | 2020-09-23 | 関東化学株式会社 | エッチング液およびエッチング液により加工されたフォトマスク |
| JP6891099B2 (ja) * | 2017-01-16 | 2021-06-18 | Hoya株式会社 | 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| CN112015044A (zh) * | 2019-05-28 | 2020-12-01 | 爱发科成膜株式会社 | 掩模坯、半色调掩模、制造方法、制造装置 |
| JP6993530B1 (ja) * | 2020-12-25 | 2022-01-13 | 株式会社エスケーエレクトロニクス | フォトマスク、フォトマスクの製造方法、表示装置の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5756235A (en) * | 1995-09-18 | 1998-05-26 | Hyundai Electronics Industries Co., Ltd. | Phase shift mask and method for fabricating the same |
| TW542943B (en) * | 2001-08-06 | 2003-07-21 | Shinetsu Chemical Co | Phase shift mask blank, phase shift mask, and manufacturing method thereof |
| TW200602803A (en) * | 2004-03-31 | 2006-01-16 | Shinetsu Chemical Co | Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3262302B2 (ja) * | 1993-04-09 | 2002-03-04 | 大日本印刷株式会社 | 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法 |
| JP4933753B2 (ja) * | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法 |
| JP4695964B2 (ja) * | 2005-11-09 | 2011-06-08 | アルバック成膜株式会社 | グレートーンマスク及びその製造方法 |
| JP4516560B2 (ja) * | 2005-12-26 | 2010-08-04 | Ｈｏｙａ株式会社 | マスクブランク及びフォトマスク |
| JP4570632B2 (ja) * | 2006-02-20 | 2010-10-27 | Ｈｏｙａ株式会社 | ４階調フォトマスクの製造方法、及びフォトマスクブランク加工品 |
| CN101025564B (zh) * | 2006-02-20 | 2010-12-15 | Hoya株式会社 | 四级光掩模制造方法和其中所使用的光掩模坯料 |
| KR100886802B1 (ko) * | 2006-03-30 | 2009-03-04 | 주식회사 에스앤에스텍 | 블랭크마스크, 이를 이용한 투과 제어 슬릿 마스크 및 그제조방법 |
| KR101329525B1 (ko) * | 2006-10-04 | 2013-11-14 | 주식회사 에스앤에스텍 | 그레이톤 블랭크 마스크와 그레이톤 포토마스크 및 그제조방법 |
| JP4848932B2 (ja) * | 2006-11-13 | 2011-12-28 | 大日本印刷株式会社 | プロキシミティ露光用階調マスク |
| KR101247768B1 (ko) * | 2007-10-12 | 2013-03-25 | 알박 세이마쿠 가부시키가이샤 | 그레이 톤 마스크의 제조 방법 |
| JP5219201B2 (ja) * | 2008-07-31 | 2013-06-26 | Ｈｏｙａ株式会社 | フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法 |
-
2008
- 2008-09-26 JP JP2008247271A patent/JP5121020B2/ja active Active
-
2009
- 2009-09-23 KR KR1020090090091A patent/KR101156658B1/ko active Active
- 2009-09-24 TW TW098132359A patent/TWI465838B/zh active
-
2011
- 2011-08-29 KR KR1020110086572A patent/KR101543288B1/ko active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5756235A (en) * | 1995-09-18 | 1998-05-26 | Hyundai Electronics Industries Co., Ltd. | Phase shift mask and method for fabricating the same |
| TW542943B (en) * | 2001-08-06 | 2003-07-21 | Shinetsu Chemical Co | Phase shift mask blank, phase shift mask, and manufacturing method thereof |
| TW200602803A (en) * | 2004-03-31 | 2006-01-16 | Shinetsu Chemical Co | Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5121020B2 (ja) | 2013-01-16 |
| JP2010078923A (ja) | 2010-04-08 |
| KR101543288B1 (ko) | 2015-08-11 |
| KR101156658B1 (ko) | 2012-06-14 |
| KR20100035599A (ko) | 2010-04-05 |
| KR20110111342A (ko) | 2011-10-11 |
| TW201017328A (en) | 2010-05-01 |
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