TWI464542B - 微影投射曝光裝置的照射系統 - Google Patents

微影投射曝光裝置的照射系統 Download PDF

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Publication number
TWI464542B
TWI464542B TW098132466A TW98132466A TWI464542B TW I464542 B TWI464542 B TW I464542B TW 098132466 A TW098132466 A TW 098132466A TW 98132466 A TW98132466 A TW 98132466A TW I464542 B TWI464542 B TW I464542B
Authority
TW
Taiwan
Prior art keywords
mirror
illumination system
mirror elements
light
mirror element
Prior art date
Application number
TW098132466A
Other languages
English (en)
Chinese (zh)
Other versions
TW201022854A (en
Inventor
弗羅瑞恩 巴哈
丹尼爾 賓士
賽夫瑞 渥帝斯
阿民 韋伯
伯特 窩姆
Original Assignee
卡爾蔡司Ｓｍｔ有限公司
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Filing date
Publication date
Application filed by 卡爾蔡司Ｓｍｔ有限公司 filed Critical 卡爾蔡司Ｓｍｔ有限公司
Publication of TW201022854A publication Critical patent/TW201022854A/zh
Application granted granted Critical
Publication of TWI464542B publication Critical patent/TWI464542B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V33/00—Structural combinations of lighting devices with other articles, not otherwise provided for
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
TW098132466A 2008-09-29 2009-09-25 微影投射曝光裝置的照射系統 TWI464542B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08017088A EP2169464A1 (en) 2008-09-29 2008-09-29 Illumination system of a microlithographic projection exposure apparatus

Publications (2)

Publication Number Publication Date
TW201022854A TW201022854A (en) 2010-06-16
TWI464542B true TWI464542B (zh) 2014-12-11

Family

ID=40673627

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098132466A TWI464542B (zh) 2008-09-29 2009-09-25 微影投射曝光裝置的照射系統

Country Status (6)

Country Link
US (2) US8797507B2 (https=)
EP (1) EP2169464A1 (https=)
JP (1) JP5475785B2 (https=)
KR (1) KR101704069B1 (https=)
TW (1) TWI464542B (https=)
WO (1) WO2010034472A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2169464A1 (en) 2008-09-29 2010-03-31 Carl Zeiss SMT AG Illumination system of a microlithographic projection exposure apparatus
DE102010025222A1 (de) * 2010-06-23 2011-12-29 Carl Zeiss Smt Gmbh Steuerbare Spiegelanordnung, optisches System mit einer steuerbaren Spiegelanordnung und Verfahren zur Ansteuerung einer steuerbaren Spiegelanordnung
TWI498679B (zh) 2010-07-30 2015-09-01 卡爾蔡司Ｓｍｔ有限公司 超紫外線曝光裝置
WO2012034571A1 (en) * 2010-09-14 2012-03-22 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection exposure apparatus
DE102010061950A1 (de) * 2010-11-25 2012-05-31 Carl Zeiss Smt Gmbh Verfahren sowie Anordnung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System
DE102011005778A1 (de) * 2011-03-18 2012-09-20 Carl Zeiss Smt Gmbh Optisches Element
DE102011005840A1 (de) * 2011-03-21 2012-09-27 Carl Zeiss Smt Gmbh Steuerbare Mehrfachspiegelanordnung, optisches System mit einer steuerbaren Mehrfachspiegelanordnung sowie Verfahren zum Betreiben einer steuerbaren Mehrfachspiegelanordnung
WO2012169090A1 (ja) * 2011-06-06 2012-12-13 株式会社ニコン 照明方法、照明光学装置、及び露光装置
DE102011104543A1 (de) * 2011-06-18 2012-12-20 Carl Zeiss Smt Gmbh Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage und Verfahren zur mikrolithographischen Projektion einer Maske
FR2996016B1 (fr) * 2012-09-25 2014-09-19 Sagem Defense Securite Illuminateur de photolithographie telecentrique selon deux directions
KR102089310B1 (ko) * 2013-01-25 2020-03-16 엘지디스플레이 주식회사 마스크리스 노광장치
DE102013204316B4 (de) * 2013-03-13 2015-07-23 Carl Zeiss Smt Gmbh Projektionsanordnung
US9854226B2 (en) 2014-12-22 2017-12-26 Google Inc. Illuminator for camera system having three dimensional time-of-flight capture with movable mirror element
WO2017050360A1 (en) * 2015-09-23 2017-03-30 Carl Zeiss Smt Gmbh Method of operating a microlithographic projection apparatus and illuminations system of such an apparatus
NL2020548A (en) * 2017-04-12 2018-10-17 Asml Netherlands Bv Mirror Array
DE102017221420A1 (de) 2017-11-29 2018-11-29 Carl Zeiss Smt Gmbh Euv-beleuchtungssystem und verfahren zum erzeugen einer beleuchtungsstrahlung
DE102018123328B4 (de) * 2018-09-21 2022-09-08 Carl Zeiss Smt Gmbh Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum Betreiben eines solchen optischen Systems
KR102678312B1 (ko) * 2018-10-18 2024-06-25 삼성전자주식회사 Euv 노광 장치와 노광 방법, 및 그 노광 방법을 포함한 반도체 소자 제조 방법
US12449709B2 (en) 2021-12-08 2025-10-21 Samsung Electronics Co., Ltd. Spatial light modulator and electronic apparatus including the same
DE102021214366A1 (de) * 2021-12-15 2023-06-15 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Vermeidung einer Degradation einer optischen Nutzoberfläche eines Spiegelmoduls, Projektionssystem, Beleuchtungssystem sowie Projektionsbelichtungsanlage
EP4261580A1 (en) * 2022-04-14 2023-10-18 Airbus Defence and Space GmbH Apparatus and method for altering an optical surface of a mirror
DE102023208980A1 (de) * 2023-09-15 2024-08-01 Carl Zeiss Smt Gmbh MEMS-Mikrospiegeleinheit und Facettenspiegel

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004034447A1 (ja) * 2002-10-10 2004-04-22 Nikon Corporation 極短紫外線光学系用反射ミラー、極短紫外線光学系、極短紫外線光学系の使用方法、極短紫外線光学系の製造方法、極短紫外線露光装置、及び極短紫外線露光装置の使用方法
US20050018269A1 (en) * 2001-08-16 2005-01-27 Carl Zeiss Smt Ag Optical system
TW200622506A (en) * 2004-09-14 2006-07-01 Asml Netherlands Bv Lithogrpahic apparatus and device manufacturing method
JP2007150295A (ja) * 2005-11-10 2007-06-14 Carl Zeiss Smt Ag ラスタ要素を有する光学装置、及びこの光学装置を有する照射システム
JP2008130895A (ja) * 2006-11-22 2008-06-05 Nikon Corp 露光装置、デバイス製造方法、及び露光方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69220868T2 (de) 1991-09-07 1997-11-06 Canon K.K., Tokio/Tokyo System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen
JP4320999B2 (ja) * 2002-02-04 2009-08-26 株式会社ニコン Ｘ線発生装置及び露光装置
JP4324957B2 (ja) 2002-05-27 2009-09-02 株式会社ニコン 照明光学装置、露光装置および露光方法
US6996343B2 (en) * 2003-03-21 2006-02-07 Lucent Technologies Inc. Dispersion compensator
DE10317662A1 (de) 2003-04-17 2004-11-18 Carl Zeiss Smt Ag Projektionsobjektiv, mikrolithographische Projektionsbelichtungsanlage und Verfahren zur Herstellung einer Halbleiterschaltung
DE10327733C5 (de) 2003-06-18 2012-04-19 Limo Patentverwaltung Gmbh & Co. Kg Vorrichtung zur Formung eines Lichtstrahls
TWI220097B (en) * 2003-07-21 2004-08-01 Avision Inc Image calibration method
JP4717813B2 (ja) * 2003-09-12 2011-07-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光設備のための照明系
US20050280879A1 (en) 2004-02-09 2005-12-22 Gibson Gregory T Method and apparatus for scanning a beam of light
WO2005078522A2 (en) 2004-02-17 2005-08-25 Carl Zeiss Smt Ag Illumination system for a microlithographic projection exposure apparatus
JP4864869B2 (ja) * 2004-02-26 2012-02-01 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置のための照明系
US20100014063A1 (en) * 2005-05-31 2010-01-21 Fujifilm Corporation Image exposure apparatus
JP4778834B2 (ja) * 2006-05-24 2011-09-21 富士フイルム株式会社 画像記録方法及び装置
US8052289B2 (en) * 2006-06-07 2011-11-08 Asml Netherlands B.V. Mirror array for lithography
EP1890191A1 (en) * 2006-08-14 2008-02-20 Carl Zeiss SMT AG Catadioptric projection objective with pupil mirror
DE102006039895A1 (de) * 2006-08-25 2008-03-13 Carl Zeiss Smt Ag Verfahren zur Korrektur von durch Intensitätsverteilungen in optischen Systemen erzeugten Abbildungsveränderungen sowie entsprechendes optisches System
US7804603B2 (en) * 2006-10-03 2010-09-28 Asml Netherlands B.V. Measurement apparatus and method
DE102008002377A1 (de) * 2007-07-17 2009-01-22 Carl Zeiss Smt Ag Beleuchtungssystem sowie Projektionsbelichtungsanlage für die Mikrolithografie mit einem derartigen Beleuchtungssystem
WO2009026970A1 (en) * 2007-08-24 2009-03-05 Carl Zeiss Smt Ag Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography
TWI427431B (zh) * 2008-09-22 2014-02-21 Ａｓｍｌ荷蘭公司 微影裝置、可程式化圖案化器件及微影方法
EP2169464A1 (en) * 2008-09-29 2010-03-31 Carl Zeiss SMT AG Illumination system of a microlithographic projection exposure apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050018269A1 (en) * 2001-08-16 2005-01-27 Carl Zeiss Smt Ag Optical system
WO2004034447A1 (ja) * 2002-10-10 2004-04-22 Nikon Corporation 極短紫外線光学系用反射ミラー、極短紫外線光学系、極短紫外線光学系の使用方法、極短紫外線光学系の製造方法、極短紫外線露光装置、及び極短紫外線露光装置の使用方法
TW200622506A (en) * 2004-09-14 2006-07-01 Asml Netherlands Bv Lithogrpahic apparatus and device manufacturing method
JP2007150295A (ja) * 2005-11-10 2007-06-14 Carl Zeiss Smt Ag ラスタ要素を有する光学装置、及びこの光学装置を有する照射システム
JP2008130895A (ja) * 2006-11-22 2008-06-05 Nikon Corp 露光装置、デバイス製造方法、及び露光方法

Also Published As

Publication number Publication date
US20140307239A1 (en) 2014-10-16
TW201022854A (en) 2010-06-16
JP5475785B2 (ja) 2014-04-16
US9523922B2 (en) 2016-12-20
JP2012504324A (ja) 2012-02-16
WO2010034472A1 (en) 2010-04-01
KR20110059800A (ko) 2011-06-03
KR101704069B1 (ko) 2017-02-07
EP2169464A1 (en) 2010-03-31
US20110181850A1 (en) 2011-07-28
US8797507B2 (en) 2014-08-05

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