TWI464423B - 藉由凱文探針分析檢驗靜電卡盤之方法 - Google Patents
藉由凱文探針分析檢驗靜電卡盤之方法 Download PDFInfo
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000010998 test method Methods 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
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- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Description
本發明係關於靜電卡盤。
依照美國法典第35條第119項第(e)款規定,對於西元2008年2月29日所申請,名為『藉由凱文探針分析檢驗靜電卡盤之方法(METHOD FOR INSPECTING ELECTROSTATIC CHUCKS WITH KELVIN PROBE ANALYSIS)』之美國暫時專利申請案第61/064378號,本申請案請求優先權,上述案的整體內容併入於本文以供參考。
靜電卡盤(ESC)係如電漿蝕刻腔之半導體處理設備中的組件,可在如化學氣相沈積(CVD)、物理氣相沈積(PVD)、或蝕刻反應器之處理期間用於傳送、夾持與/或溫控半導體晶圓或玻璃基板(即平面顯示器)。ESC通常具有短生命期,導致以下的問題:包括例如動態對準失效(dynamic alignment failure)、ESC與所撐基板的底面之間的大量氦氣冷卻氣體洩漏、增加的釋放時間(dechucking time)、與基板黏附ESC或自ESC釋放的失效。此ESC的早期問題會引起基板破裂、影響產能、導致微粒與缺陷問題、與增加含如此ESC之電漿處理設備的所有權成本。
茲提供一種檢驗靜電卡盤的方法。此ESC具有支撐半導體晶圓的介電支撐面。藉由凱文探針掃描該介電支撐面,以獲得表面電勢圖。該表面電勢圖與一參考性凱文探針表面電勢圖相比,以判定該ESC是否通過檢驗。
ESC可用於介電質蝕刻處理,如電漿蝕刻氧化矽與低介電常數(low-k)材料。一示範性介電質ESC可包括一金屬基底(如陽極極化或非陽極極化的鋁合金),其帶有用以支撐半導體或如晶圓之基板的介電面。作為一範例,該介電面可包括燒結層板(sintered laminate),其於二陶瓷層(如約20毫英寸厚的薄陶瓷層)之間包括一圖案化耐熔電極(如鎢或鉬)。該層板可以黏著材料黏附於金屬基底,該黏著材料係如含導電粉末(如鋁、矽或相似物)的矽酮基材料。此金屬基底約為1.5英吋厚,通常包括RF與DC功率饋入部、升降銷的穿透孔、氦氣通道、溫控流體循環的槽道、溫度感應裝置等等。
雙極ESC包括複數個電極(如相互交叉,同心環等),每一個電極以反向電壓充電,以在無電漿時仍維持箝制能力。在一實施例中,對ESC的外電極充以正電。對於該雙極ESC,多個電極中之一具有正電性,反之其它電極具有負電性。
ESC通常為庫倫型(Coulombic)或詹森-拉別克型(Johnsen-Rahbek)。庫倫型ESC使用具有高電阻的介電面層,以產生庫倫靜電力。詹森-拉別克型ESC利用低電阻的介電面層,如摻有TiO2
的Al2
O3
,該ESC常提供低外加電壓之較高的靜電箝制力。
依據實施例,詹森-拉別克型ESC的陶瓷介電層可包括94% Al2
O3
、4% SiO2
、1% TiO2
、與1% CaO(weight%,重量百分比),和微量的MgO、Si、Ti、Ca、與Mg。依據另一實施例,對於庫倫型ESC,該陶瓷介電層可包括大於或等於99%的Al2
O3
。
當前,檢驗ESC(全新的與已修復的兩者)的方法包括ESC的電流-電壓特性分析與氦氣流終點測試。這兩者檢驗方法包含在電漿處理設備中安裝ESC,及消耗多片空白(blank)測試晶圓(如約10至20片矽晶圓)。
對於雙電極ESC的電流-電壓特性分析,於該ESC上放置空白測試晶圓,且產生電漿。將測得的ESC電流作為電壓(即高達2000V)函數,而產生負電極與正電極兩者的電流-電壓輪廓。在較低的電壓中,因來自負電極的電流係低於來自正電極的電流,電流-電壓輪廓實質彼此平行。然而,在若干較高電壓中,來自負電極的電流會陡升且超過來自正電極的電流(即「交錯電壓」)。對複數片晶圓重複電流-電壓特性分析,可判定出多個交錯電壓值。
據信因最外面的電極係正電性,故來自正電極的電流仍係相對平坦,其可能漏電至電漿中。另一方面,據信因場發射或肖特基發射效應(Shottky emission effect),故來自負電極的電流會陡升。帶有較高之交錯電壓的ESC通常比帶有低交錯電壓的ESC具有改善的箝制特性。
對於氦氣流終點測試,空白測試晶圓係置於該ESC上。對該ESC施加電壓,以箝制該空白測試晶圓同時產生電漿。在完成電漿處理之後,沿著晶圓背側(即與ESD接觸之面)以預定流速釋出氦氣流,而利於釋放晶圓。同時產生低功率電漿(即低於100W),以自該晶圓移除殘留電荷。於氦氣流終點測試期間,測量直至完成釋放晶圓之氦氣流的總計時間。帶有較短之氦氣流時(helium flow time)的ESC通常比帶有較長之氦氣流時的ESC具有改善的箝制與釋放特性。
然而,這兩種檢驗方法係費時、費力且可能產生不一致的結果。現有的檢驗方法需要在電漿處理設備中安裝ESC、對該設備抽真空且產生電漿。此外,這些檢驗方法係多迭代的重複,每一迭代需要額外消耗新的空白矽晶圓(即10至20片矽晶圓)。再者,空白矽晶圓之特性中的晶圓間變異可能引起不一致的交錯電壓或氦氣流時資料。因此,需要ESC之更具成本效益與可靠的檢驗方法。
一種以具成本效益且可靠的方法而檢驗ESC(新的與已修復兩者)的新穎工作方式包括ESC之介電面的凱文探針分析,該介電面用以支撐矽晶圓。此凱文探針係非破壞性、非接觸式分析方法,用以功函數(針對金屬)或表面電勢(針對介電質)之特性量測。此表面分析技術依靠震動的電容尖端,其可量測針尖與試品(如ESC的介電面)之間的表面電勢。震動幅度可調至數微米至數釐米不等。此凱文探針尖端係在平行於ESC之上介電面的平面上做光柵式掃描,以繪製吋級區域的表面電勢。位於英國之Caithness的KP科技公司(KP Technology)可提供如此的凱文探針。
圖1A、1B、2A、2B、3A與3B說明三種ESC介電面的三種凱文探針表面電勢測繪,其橫跨約18cm×20cm的面積。圖1A係第一ESC介電面的二維等高線圖,其中測得該表面電勢為523±87meV。圖1B系圖1A的三維斜視圖。圖2A係第二ESC介電面的二維等高線圖,其中測得該表面電勢為-240±38meV。圖2B系圖2A的三維斜視圖。圖3A係第三ESC介電面的二維等高線圖,其中測得該表面電勢為118±33meV。圖3B系圖3A的三維斜視圖。凱文探針分析獨特地量測由表面形態與最頂之原子層的雜質能帶所定義的ESC表面特性。ESC介電面之表面電勢特性可為ESC的有力檢驗工具,該表面電勢特性與箝制特性相互關聯。理想上,ESC的介電面具有均勻且相對低的表面電勢,以利於移除電荷積累。
依據較佳的方法,參考性凱文探針表面電勢圖的資料庫係儲存於電子數據庫中。根據ESC的凱文探針分析產生一系列的表面電勢圖,而獲得這些參考圖,該ESC已通過檢驗且被判定具有良好的箝制與釋放特性(即較高的交錯電壓與/或較短的氦氣流時)。為求快速且具成本效益地檢驗新或修復之帶有未知箝制與釋放特性的ESC,測得該ESC的凱文探針表面電勢圖,再與參考性表面電勢圖的資料庫相比。假設所測得新或修復之ESC的凱文探針表面電勢圖與資料庫中的參考圖相似,則該ESC通過檢驗且預期具有良好的箝制與釋放特性。因此,在不需於電漿處理設備中安裝ESC或消耗多片矽晶圓的情況下,凱文探針分析提供於大氣狀態下檢驗每一個ESC的優點。
在一實施例中,所測得的凱文探針表面電勢圖與參考性凱文探針表面電勢圖的資料庫係儲存於電腦可讀式儲存媒體上。藉由執行電腦軟體程式可自動將所測得的凱文探針表面電勢圖與參考性凱文探針表面電勢圖的資料庫做比對。可將此自動比對的結果發佈作為狀態報告,顯示該ESC是否通過檢驗。例如,於共同持有的美國專利申請案公開號第2007/0284246號(Keil等人所發明)中也揭露如此將所測得資料與參考資料做比對的方法,該案之內容併入本文以供參考。
範例
在二ESC試品上執行測試,以判定凱文探針分析作為可實行之檢驗技術的能力。使用電流-電壓特性分析先行判定通過檢驗的一ESC(ESC試品編號:LJ4030749),與先行判定未通過檢驗的另一ESC(ESC試品編號:LJ4030745)。使用凱文探針(型號號碼:SKP250250)執行ESC試品的表面電勢掃描,該探針係由英國Caithness的KP科技公司所提供。
以直徑10mm之不鏽鋼針尖用非接觸式模式掃描每一ESC的表面。此不鏽鋼針尖以光柵式掃過約180mm×160mm的表面面積。於掃描期間,每一ESC係與底下的不鏽鋼基板電氣接觸。於不同的時段中(即介於量測之間達1小時),針對每一試品重複三次凱文探針掃描,以顧及ESC之表面放電。應注意到,ESC放電太慢係有害的特性,其導致更長的釋放時間。
下文的表1總結凱文探針掃描的結果與對應的交錯電壓。圖4A說明已通過檢驗之ESC卡盤的二維等高線表面電勢圖。圖4B系圖4A的三維斜視圖。圖5A說明未通過檢驗之ESC卡盤的二維等高線表面電勢圖。圖5B系圖5A的三維斜視圖。
在任何情況下,該等較佳實施例僅為說明用,不應認為具限制性。本發明之範圍當由附加的權利請求項所給定,而非先前描述所給定,且旨在包括屬於權利請求項之範圍內的所有變化與等效動作。
圖1A、1B、2A、2B、3A與3B說明三種ESC介電面的示範性凱文探針表面電勢測繪。
圖4A與4B說明已通過檢驗之ESC卡盤的二維等高線表面電勢圖。
圖5A與5B說明未通過檢驗之ESC卡盤的二維等高線表面電勢圖。
Claims (13)
- 一種檢驗靜電卡盤(ESC)的方法,該ESC具有用以支撐一半導體晶圓的一介電支撐面,該方法包括:以一凱文探針掃描該介電支撐面,以獲得一二維或三維電表面電勢圖,該掃描係藉由將該凱文探針於一平行於該介電支撐面的平面上做光柵式掃描以及在橫越該介電支撐面之一區域的複數點上繪製該表面電勢圖而為之;及使該表面電勢圖與一參考性凱文探針表面電勢圖做比對,以判定該ESC是否通過檢驗。
- 如申請專利範圍第1項之檢驗靜電卡盤(ESC)的方法,其中該ESC係全新的或已修復的。
- 如申請專利範圍第1項之檢驗靜電卡盤(ESC)的方法,其中以該凱文探針掃描一參考性ESC的介電支撐面,而產生該參考性凱文探針表面電勢圖。
- 如申請專利範圍第1項之檢驗靜電卡盤(ESC)的方法,其中該ESC係一庫倫式(Coulombic)或一詹森-拉別克式(Johnsen-Rahbek)ESC。
- 如申請專利範圍第1項之檢驗靜電卡盤(ESC)的方法,其中該介電支撐面係由Al2 O3 所組成。
- 如申請專利範圍第1項之檢驗靜電卡盤(ESC)的方法,其中ESC係一詹森-拉別克式(Johnsen-Rahbek)ESC;及該介電支撐面係由94% Al2 O3 、4% SiO2 、1% TiO2 、與1% CaO,和微量的MgO、Si、Ti、Ca、與Mg所組成。
- 如申請專利範圍第1項之檢驗靜電卡盤(ESC)的方法,其中該ESC係一庫倫式(Coulombic)ESC;及該介電支撐面係由大於或等於99%之Al2 O3 所組成。
- 如申請專利範圍第1項之檢驗靜電卡盤(ESC)的方法,其中該ESC更包括一金屬基底,該介電支撐面覆蓋於該金屬基底上。
- 如申請專利範圍第1項之檢驗靜電卡盤(ESC)的方法,其中 該介電支撐面包括一燒結層板(sintered laminate),該燒結層板於二介電層之間包括一圖案化耐熔電極。
- 如申請專利範圍第8項之檢驗靜電卡盤(ESC)的方法,其中該金屬基底包括RE與DC功率饋入部、升降銷的穿透孔、氦氣通道、溫控流體循環的槽道與溫度感應裝置。
- 如申請專利範圍第1項之檢驗靜電卡盤(ESC)的方法,其中在大氣狀態下執行該掃描。
- 如申請專利範圍第1項之檢驗靜電卡盤(ESC)的方法,更包括在一電漿蝕刻腔中安裝該ESC。
- 如申請專利範圍第12項之檢驗靜電卡盤(ESC)的方法,更包括在該ESC上支撐一晶圓與對該晶圓施以電漿蝕刻。
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WO2009110980A2 (en) | 2009-09-11 |
US8022718B2 (en) | 2011-09-20 |
KR101645046B1 (ko) | 2016-08-02 |
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TW200949264A (en) | 2009-12-01 |
CN101971316B (zh) | 2012-07-04 |
KR20100126763A (ko) | 2010-12-02 |
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CN101971316A (zh) | 2011-02-09 |
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